JPH07109438A - Polyimide varnish - Google Patents
Polyimide varnishInfo
- Publication number
- JPH07109438A JPH07109438A JP19391894A JP19391894A JPH07109438A JP H07109438 A JPH07109438 A JP H07109438A JP 19391894 A JP19391894 A JP 19391894A JP 19391894 A JP19391894 A JP 19391894A JP H07109438 A JPH07109438 A JP H07109438A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- propanol
- propylene glycol
- varnish
- polyimide varnish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004642 Polyimide Substances 0.000 title claims abstract description 125
- 229920001721 polyimide Polymers 0.000 title claims abstract description 125
- 239000002966 varnish Substances 0.000 title claims abstract description 40
- 238000000576 coating method Methods 0.000 claims abstract description 46
- 239000011248 coating agent Substances 0.000 claims abstract description 45
- 239000002243 precursor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 35
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical class CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 6
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 4
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 claims description 2
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 claims description 2
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 claims description 2
- PPPFYBPQAPISCT-UHFFFAOYSA-N 2-hydroxypropyl acetate Chemical compound CC(O)COC(C)=O PPPFYBPQAPISCT-UHFFFAOYSA-N 0.000 claims description 2
- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 2
- 229940116423 propylene glycol diacetate Drugs 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- 125000002252 acyl group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 abstract description 3
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 24
- 239000002904 solvent Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- -1 dicarboxyphenyl Chemical group 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 150000004985 diamines Chemical class 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 125000006159 dianhydride group Chemical group 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- FHBXQJDYHHJCIF-UHFFFAOYSA-N (2,3-diaminophenyl)-phenylmethanone Chemical compound NC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1N FHBXQJDYHHJCIF-UHFFFAOYSA-N 0.000 description 1
- 125000002861 (C1-C4) alkanoyl group Chemical group 0.000 description 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- ISXCYFNKGRXZFQ-UHFFFAOYSA-N 1,1-diphenylpropane-2,2-diamine Chemical compound C=1C=CC=CC=1C(C(N)(N)C)C1=CC=CC=C1 ISXCYFNKGRXZFQ-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical group C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- RHRNYXVSZLSRRP-UHFFFAOYSA-N 3-(carboxymethyl)cyclopentane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CC1C(C(O)=O)CC(C(O)=O)C1C(O)=O RHRNYXVSZLSRRP-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- HNHQPIBXQALMMN-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)-dimethylsilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 HNHQPIBXQALMMN-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- ASNOFHCTUSIHOM-UHFFFAOYSA-N 4-[10-(4-aminophenyl)anthracen-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N)C=C1 ASNOFHCTUSIHOM-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- QBSMHWVGUPQNJJ-UHFFFAOYSA-N 4-[4-(4-aminophenyl)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(C=2C=CC(N)=CC=2)C=C1 QBSMHWVGUPQNJJ-UHFFFAOYSA-N 0.000 description 1
- UURATDYSEHCBAO-UHFFFAOYSA-N 4-[6-(3,4-dicarboxyphenyl)pyridin-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)=N1 UURATDYSEHCBAO-UHFFFAOYSA-N 0.000 description 1
- ZPAKUZKMGJJMAA-UHFFFAOYSA-N Cyclohexane-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)CC1C(O)=O ZPAKUZKMGJJMAA-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- BALIDSJNGIOVDT-UHFFFAOYSA-N anthracene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=CC3=C(C(O)=O)C(C(=O)O)=CC=C3C=C21 BALIDSJNGIOVDT-UHFFFAOYSA-N 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- VDCSGNNYCFPWFK-UHFFFAOYSA-N diphenylsilane Chemical compound C=1C=CC=CC=1[SiH2]C1=CC=CC=C1 VDCSGNNYCFPWFK-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- JREWFSHZWRKNBM-UHFFFAOYSA-N pyridine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CN=C(C(O)=O)C(C(O)=O)=C1C(O)=O JREWFSHZWRKNBM-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Paints Or Removers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ポリイミドワニスに関
するものであり、さらに詳しくは、ポリイミド及び/又
はポリイミド前駆体を有機溶媒に溶解し、該溶解液を支
持基板上に塗布し、加熱処理を施して、支持基板上に平
滑なポリイミド塗膜を形成することが出来るポリイミド
ワニスに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyimide varnish, more specifically, a polyimide and / or a polyimide precursor is dissolved in an organic solvent, the solution is applied onto a supporting substrate, and heat treatment is performed. The present invention relates to a polyimide varnish that can be applied to form a smooth polyimide coating film on a supporting substrate.
【0002】[0002]
【従来の技術】ポリイミドはその特徴である高い機械的
強度、耐熱性、耐溶剤性のために、電気・電子分野にお
ける保護材料、絶縁材料として広く用いられている。具
体的には、半導体用の絶縁膜として用いる場合には、配
線加工されたシリコン支持基板上に1〜10μmのポリ
イミド塗膜を形成させたり、液晶配向膜として用いる場
合には、透明電極付きの透明支持基板上に0.05〜
0.2μmのポリイミド塗膜を形成させるなど、各種支
持基板上に薄いポリイミド塗膜を形成させて用いるのが
一般的である。この様なポリイミド塗膜を形成させるに
は、ポリイミド又はポリイミド前駆体を適当な有機溶媒
に溶解させて得たポリイミドワニスを、スピンコート、
オフセット印刷、グラビア印刷などの方法で支持基板上
に塗布し、加熱処理を施すことが一般的である。2. Description of the Related Art Polyimide has been widely used as a protective material and an insulating material in the electric and electronic fields because of its high mechanical strength, heat resistance and solvent resistance. Specifically, when used as an insulating film for a semiconductor, a polyimide coating film having a thickness of 1 to 10 μm is formed on a silicon support substrate on which wiring is processed, and when used as a liquid crystal alignment film, a transparent electrode with a transparent electrode is provided. 0.05 ~ on transparent support substrate
Generally, a thin polyimide coating film is formed on various supporting substrates such as a 0.2 μm polyimide coating film to be used. To form such a polyimide coating film, a polyimide varnish obtained by dissolving a polyimide or a polyimide precursor in a suitable organic solvent, spin coating,
It is common to apply a heat treatment on the supporting substrate by a method such as offset printing or gravure printing.
【0003】[0003]
【発明が解決しようとする課題】ポリイミド塗膜を基板
上に形成する場合、平滑な膜を形成するためには塗布後
の溶液の流動性が重要である。塗膜表面の凹凸を溶液が
流動することによって平滑にするからである。しかしな
がら、現在ポリイミドの溶媒として使用されているもの
は表面張力が大きく、流動性はあまり良くない。また、
特公平4−81167には、溶液の表面張力を低下させ
るため、ブチルセロソルブを添加する方法が挙げられて
いるが、ブチルセロソルブには毒性が指摘されており、
使用上あまり好ましくない。When a polyimide coating film is formed on a substrate, the fluidity of the solution after coating is important for forming a smooth film. This is because the unevenness on the surface of the coating film is made smooth by flowing the solution. However, what is currently used as a solvent for polyimide has a large surface tension and its fluidity is not so good. Also,
Japanese Patent Publication No. 4-81167 discloses a method of adding butyl cellosolve in order to reduce the surface tension of a solution, but butyl cellosolve is pointed out to be toxic,
Not very desirable for use.
【0004】本発明の目的は、ポリイミド及び/又はポ
リイミド前駆体を溶解した溶液を基板上に塗布し、電気
・電子素子用の絶縁膜・保護膜或いは液晶配向膜等とし
て用いられるポリイミド塗膜形成するポリイミドワニス
において、平滑なポリイミド塗膜を形成することが出来
るポリイミドワニスの提供にある。An object of the present invention is to form a polyimide coating film which is used as an insulating film / protective film for electric / electronic elements or a liquid crystal alignment film by coating a solution of polyimide and / or a polyimide precursor on a substrate. The present invention provides a polyimide varnish capable of forming a smooth polyimide coating film.
【0005】[0005]
【課題を解決するための手段】即ち、本発明は、ポリイ
ミド及び/又はポリイミド前駆体を有機溶媒に溶解し、
該溶液を支持基板上に塗布し、加熱処理を施して、支持
基板上にポリイミド塗膜を形成するのに使用されるポリ
イミドワニスにおいて、有機溶媒の5〜60重量%が、
一般式[I]That is, the present invention is to dissolve a polyimide and / or a polyimide precursor in an organic solvent,
In the polyimide varnish used for forming the polyimide coating film on the supporting substrate by applying the solution on the supporting substrate and applying heat treatment, 5 to 60% by weight of the organic solvent is
General formula [I]
【0006】[0006]
【化2】 [Chemical 2]
【0007】(式中、nは1又は2であり、Rは水素、
C1-4 のアルキル基、C1-4 のアルケニル基、C1-4 の
アルカノイル基を表す。)で表されるプロピレングリコ
ール誘導体を含有することを特徴とするポリイミドワニ
スに関するものである。本発明の一般式[I]で表され
るプロピレングリコール誘導体を添加することにより、
ポリイミドワニスを支持基板に対して均一かつ平坦に塗
布することが可能である。(In the formula, n is 1 or 2, R is hydrogen,
It represents a C 1-4 alkyl group, a C 1-4 alkenyl group, or a C 1-4 alkanoyl group. The present invention relates to a polyimide varnish containing a propylene glycol derivative represented by By adding the propylene glycol derivative represented by the general formula [I] of the present invention,
It is possible to apply the polyimide varnish to the supporting substrate uniformly and evenly.
【0008】本発明のポリイミドワニスに用いられるポ
リイミド及び/又はポリイミド前駆体は特に限定されな
い。通常は、テトラカルボン酸誘導体と1級ジアミンを
反応、重合させてポリイミド前駆体とし、閉環イミド化
してポリイミドとするのが一般的である。本発明のポリ
イミド及び/又はポリイミド前駆体を得るために使用さ
れるテトラカルボン酸誘導体の具体例を挙げると、ピロ
メリット酸、2,3,6,7-ナフタレンテトラカルボン酸、1,
2,5,6-ナフタレンテトラカルボン酸、1,4,5,8-ナフタレ
ンテトラカルボン酸、2,3,6,7-アントラセンテトラカル
ボン酸、1,2,5,6-アントラセンテトラカルボン酸、3,3
′,4,4′- ビフェニルテトラカルボン酸、2,3,3 ′,
4′- ビフェニルテトラカルボン酸、ビス (3,4-ジカル
ボキシフェニル) エーテル、3,3 ′,4,4′- ベンゾフェ
ノンテトラカルボン酸、ビス (3,4-ジカルボキシフェニ
ル) スルホン、ビス (3,4-ジカルボキシフェニル) メタ
ン、2,2-ビス (3,4-ジカルボキシフェニル) プロパン、
1,1,1,3,3,3-ヘキサフルオロ-2,2- ビス (3,4-ジカルボ
キシフェニル) プロパン、ビス (3,4-ジカルボキシフェ
ニル) ジメチルシラン、ビス (3,4-ジカルボキシフェニ
ル) ジフェニルシラン、2,3,4,5-ピリジンテトラカルボ
ン酸、2,6-ビス (3,4-ジカルボキシフェニル) ピリジン
などの芳香族テトラカルボン酸及びこれらの二無水物並
びにこれらのジカルボン酸ジ酸ハロゲン化物、1,2,3,4-
シクロブタンテトラカルボン酸、1,2,3,4-シクロペンタ
ンテトラカルボン酸、1,2,4,5-シクロヘキサンテトラカ
ルボン酸、2,3,5-トリカルボキシシクロペンチル酢酸、
3,4-ジカルボキシ-1,2,3,4- テトラヒドロ-1-ナフタレ
ンコハク酸などの脂環式テトラカルボン酸及びこれらの
二無水物並びにこれらのジカルボン酸ジ酸ハロゲン化
物、1,2,3,4-ブタンテトラカルボン酸などの脂肪族テト
ラカルボン酸及びこれらの二無水物並びにこれらのジカ
ルボン酸ジ酸ハロゲン化物などが挙げられる。The polyimide and / or polyimide precursor used in the polyimide varnish of the present invention is not particularly limited. Usually, a tetracarboxylic acid derivative and a primary diamine are reacted and polymerized to form a polyimide precursor, and a ring-closing imidation is performed to form a polyimide. Specific examples of the tetracarboxylic acid derivative used for obtaining the polyimide and / or the polyimide precursor of the present invention include pyromellitic acid, 2,3,6,7-naphthalene tetracarboxylic acid, and 1.
2,5,6-naphthalene tetracarboxylic acid, 1,4,5,8-naphthalene tetracarboxylic acid, 2,3,6,7-anthracene tetracarboxylic acid, 1,2,5,6-anthracene tetracarboxylic acid, 3,3
′, 4,4′-Biphenyltetracarboxylic acid, 2,3,3 ′,
4'-biphenyltetracarboxylic acid, bis (3,4-dicarboxyphenyl) ether, 3,3 ', 4,4'-benzophenone tetracarboxylic acid, bis (3,4-dicarboxyphenyl) sulfone, bis (3 , 4-Dicarboxyphenyl) methane, 2,2-bis (3,4-dicarboxyphenyl) propane,
1,1,1,3,3,3-hexafluoro-2,2-bis (3,4-dicarboxyphenyl) propane, bis (3,4-dicarboxyphenyl) dimethylsilane, bis (3,4- Aromatic tetracarboxylic acids such as dicarboxyphenyl) diphenylsilane, 2,3,4,5-pyridinetetracarboxylic acid, and 2,6-bis (3,4-dicarboxyphenyl) pyridine, and their dianhydrides and these Dicarboxylic acid diacid halide, 1,2,3,4-
Cyclobutane tetracarboxylic acid, 1,2,3,4-cyclopentane tetracarboxylic acid, 1,2,4,5-cyclohexane tetracarboxylic acid, 2,3,5-tricarboxycyclopentyl acetic acid,
3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic acid and other alicyclic tetracarboxylic acids and their dianhydrides and their dicarboxylic acid diacid halides, 1,2, Examples thereof include aliphatic tetracarboxylic acids such as 3,4-butanetetracarboxylic acid, dianhydrides thereof, dicarboxylic acid diacid halides thereof, and the like.
【0009】又、本発明のポリイミド及び/又はポリイ
ミド前駆体を得るために使用されるジアミンの具体例を
挙げれば、p-フェニレンジアミン、m-フェニレンジアミ
ン、2,5-ジアミノトルエン、2,6-ジアミノトルエン、4,
4 ′- ジアミノビフェニル、3,3 ′- ジメチル-4,4′-
ジアミノビフェニル、3,3 ′- ジメトキシ-4,4′- ジア
ミノビフェニル、ジアミノジフェニルメタン、ジアミノ
ジフェニルエーテル、2,2-ジアミノジフェニルプロパ
ン、ビス (3,5-ジエチル-4- アミノフェニル) メタン、
ジアミノジフェニルスルホン、ジアミノベンゾフェノ
ン、ジアミノナフタレン、1,4-ビス (4-アミノフェノキ
シ) ベンゼン、1,4-ビス (4-アミノフェニル) ベンゼ
ン、9,10- ビス (4-アミノフェニル) アントラセン、1,
3-ビス (4-アミノフェノキシ) ベンゼン、4,4 ′- ビス
(4-アミノフェノキシ) ジフェニルスルホン、2,2-ビス
[4-(4-アミノフェノキシ) フェニル] プロパン、2,2-ビ
ス (4-アミノフェニル) ヘキサフルオロプロパン、2,2-
ビス[4-(4-アミノフェノキシ) フェニル] ヘキサフルオ
ロプロパンなどの芳香族ジアミン、ビス (4-アミノシク
ロヘキシル) メタン、ビス (4-アミノ-3- メチルシクロ
ヘキシル) メタンなどの脂環式ジアミン及びテトラメチ
レンジアミン、ヘキサメチレンジアミンなどの脂肪族ジ
アミン、更には一般式[II]Specific examples of the diamine used to obtain the polyimide and / or the polyimide precursor of the present invention include p-phenylenediamine, m-phenylenediamine, 2,5-diaminotoluene and 2,6 -Diaminotoluene, 4,
4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-
Diaminobiphenyl, 3,3′-dimethoxy-4,4′-diaminobiphenyl, diaminodiphenylmethane, diaminodiphenyl ether, 2,2-diaminodiphenylpropane, bis (3,5-diethyl-4-aminophenyl) methane,
Diaminodiphenyl sulfone, diaminobenzophenone, diaminonaphthalene, 1,4-bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenyl) benzene, 9,10-bis (4-aminophenyl) anthracene, 1 ,
3-bis (4-aminophenoxy) benzene, 4,4′-bis
(4-aminophenoxy) diphenyl sulfone, 2,2-bis
[4- (4-aminophenoxy) phenyl] propane, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-
Bis [4- (4-aminophenoxy) phenyl] aromatic diamines such as hexafluoropropane, alicyclic diamines such as bis (4-aminocyclohexyl) methane, bis (4-amino-3-methylcyclohexyl) methane, and tetra Aliphatic diamines such as methylenediamine and hexamethylenediamine, as well as general formula [II]
【0010】[0010]
【化3】 [Chemical 3]
【0011】(式中、nは1から10の整数を表す)で
表されるジアミノシロキサン等が挙げられる。テトラカ
ルボン酸誘導体とジアミンを反応、重合させポリイミド
前駆体とするが、この際用いるテトラカルボン酸誘導体
としてはテトラカルボン酸二無水物を用いるのが一般的
である。テトラカルボン酸二無水物とジアミンのモル数
の比は0.8 から1.2 であることが好ましい。通常の重縮
合反応同様、このモル比が1に近いほど生成する重合体
の重合度は大きくなる。Examples thereof include diaminosiloxane represented by the formula (n represents an integer of 1 to 10). A tetracarboxylic acid derivative and a diamine are reacted and polymerized to obtain a polyimide precursor, and a tetracarboxylic acid dianhydride is generally used as the tetracarboxylic acid derivative used at this time. The molar ratio of tetracarboxylic dianhydride and diamine is preferably 0.8 to 1.2. As in the usual polycondensation reaction, the closer the molar ratio is to 1, the higher the degree of polymerization of the polymer produced.
【0012】重合度が小さすぎるとポリイミド塗膜の強
度が不十分であり、又、重合度が大きすぎるとポリイミ
ド塗膜形成時の作業性が悪くなる場合がある。従って本
反応における生成物の重合度は、ポリイミド前駆体溶液
の還元粘度換算で0.05〜5.0dl/g (温度30℃のN-メチル
ピロリドン中、濃度 0.5g/dl)とするのが好ましい。If the degree of polymerization is too small, the strength of the polyimide coating film is insufficient, and if the degree of polymerization is too large, the workability in forming the polyimide coating film may be deteriorated. Therefore, the degree of polymerization of the product in this reaction is preferably 0.05 to 5.0 dl / g (concentration 0.5 g / dl in N-methylpyrrolidone at a temperature of 30 ° C.) in terms of reduced viscosity of the polyimide precursor solution.
【0013】テトラカルボン酸二無水物とジアミンとを
反応、重合させる方法は、特に限定されるものではな
く、一般にはN-メチルピロリドン、N,N-ジメチルアセト
アミド、N,N-ジメチルホルムアミド等の有機極性溶媒中
にジアミンを溶解し、その溶液中にテトラカルボン酸二
無水物を添加、反応させてポリイミド前駆体を合成す
る。その際の反応温度は -20から 150℃、好ましくは-5
から 100℃の任意の温度を選択することができる。The method of reacting and polymerizing tetracarboxylic dianhydride and diamine is not particularly limited, and generally, N-methylpyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide and the like are used. A diamine is dissolved in an organic polar solvent, and tetracarboxylic dianhydride is added to the solution and reacted to synthesize a polyimide precursor. The reaction temperature at that time is -20 to 150 ° C, preferably -5.
Any temperature from 1 to 100 ° C can be selected.
【0014】ポリイミドは、一般にイミド化後有機溶媒
に不溶になる場合が多い。そこで、ポリイミド前駆体を
有機溶媒に溶解してワニスを調製し、このワニスを支持
基板に塗布した後、基板上で加熱処理を行いイミド化し
て、支持基板上にポリイミド塗膜を形成させる方法が一
般的である。この際、基板上で加熱イミド化させる温度
は 100〜 400℃の任意の温度を採用できるが、特に 150
〜 350℃の範囲が好ましい。In general, polyimide is often insoluble in an organic solvent after imidization. Therefore, a method of dissolving a polyimide precursor in an organic solvent to prepare a varnish, applying this varnish to a supporting substrate, then performing a heat treatment on the substrate for imidization, and forming a polyimide coating film on the supporting substrate is a method. It is common. At this time, the temperature for imidization on the substrate by heating can be any temperature of 100 to 400 ° C.
The range of ~ 350 ° C is preferred.
【0015】一方、ポリイミドが溶媒に溶解する場合に
は、ポリイミド前駆体をイミド化し、得られたポリイミ
ドを有機溶媒に溶解してワニスを調製し、このワニスを
支持基板に塗布した後、基板を加熱処理して溶媒を揮発
させ、支持基板上にポリイミド塗膜を形成させる方法を
採ることもできる。この際、ポリイミド前駆体をイミド
化する方法としては、溶液中で加熱により脱水閉環させ
る方法が採用される。この加熱脱水による閉環温度は、
100から 350℃、好ましくは 120から 250℃の任意の温
度を選択できる。On the other hand, when the polyimide is dissolved in a solvent, the polyimide precursor is imidized, the obtained polyimide is dissolved in an organic solvent to prepare a varnish, and the varnish is applied to a supporting substrate, and then the substrate is coated. It is also possible to employ a method of forming a polyimide coating film on the supporting substrate by heat treatment to volatilize the solvent. At this time, as a method of imidizing the polyimide precursor, a method of dehydrating and ring-closing by heating in a solution is adopted. The ring-closing temperature due to this heat dehydration is
Any temperature from 100 to 350 ° C, preferably 120 to 250 ° C can be selected.
【0016】又、ポリイミド前駆体をポリイミドに転化
する他の方法としては、公知の脱水閉環触媒を使用して
化学的に閉環することもできる。本発明のポリイミドワ
ニスは、上記のポリイミド及び/又はポリイミド前駆体
を有機溶媒に溶解したワニスよりなり、更に、このワニ
スを構成する有機溶媒の5〜60重量%、好ましくは1
0〜50重量%が、一般式[I]で表されるプロピレン
グリコール誘導体でなければならない。As another method for converting the polyimide precursor into polyimide, a known dehydration ring-closing catalyst may be used to chemically perform ring closure. The polyimide varnish of the present invention comprises a varnish obtained by dissolving the above-mentioned polyimide and / or polyimide precursor in an organic solvent, and further 5 to 60% by weight of the organic solvent constituting the varnish, preferably 1
0 to 50% by weight must be the propylene glycol derivative represented by the general formula [I].
【0017】プロピレングリコール誘導体の具体例を挙
げれば、1-メトキシ-2- プロパノール、1-エトキシ-2-
プロパノール、1-ブトキシ-2- プロパノール、1-フェノ
キシ-2- プロパノール、プロピレングリコールモノアセ
テート、プロピレングリコールジアセテート、プロピレ
ングリコール-1- モノメチルエーテル-2- アセテート、
プロピレングリコール-1- モノエチルエーテル-2- アセ
テート、ジプロピレングリコール、2- (2-メトキシプロ
ポキシ) プロパノール、2- (2-エトキシプロポキシ) プ
ロパノール、2- (2-ブトキシプロポキシ) プロパノー
ル、などが挙げられ、特に1-ブトキシ-2- プロパノー
ル、2- (2-メトキシプロポキシ) プロパノールが好まし
い。Specific examples of the propylene glycol derivative include 1-methoxy-2-propanol and 1-ethoxy-2-
Propanol, 1-butoxy-2-propanol, 1-phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate,
Propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2- (2-methoxypropoxy) propanol, 2- (2-ethoxypropoxy) propanol, 2- (2-butoxypropoxy) propanol, etc. Of these, 1-butoxy-2-propanol and 2- (2-methoxypropoxy) propanol are particularly preferable.
【0018】これらのプロピレングリコール誘導体は、
本発明のポリイミドワニスを構成する全溶媒量の5重量
%以上なければ、塗膜の平滑化に対する効果が十分では
ない。又、これらのプロピレングリコール誘導体は、通
常、単独ではこのポリイミド及び/又はポリイミド前駆
体を溶解させないため、全溶媒量の60重量%を超える
と、ポリマーの析出などが起こり、ワニスの安定性が低
下するため好ましくない。These propylene glycol derivatives are
If the amount of the solvent constituting the polyimide varnish of the present invention is not less than 5% by weight, the effect of smoothing the coating film is not sufficient. Further, since these propylene glycol derivatives usually do not dissolve the polyimide and / or the polyimide precursor by themselves, when the amount exceeds 60% by weight of the total amount of the solvent, precipitation of the polymer occurs and the stability of the varnish decreases. It is not preferable because
【0019】又、本発明のポリイミドワニスを構成する
全溶媒のうち、上記プロピレングリコール誘導体以外の
溶媒は、ポリイミド及び/又はポリイミド前駆体を溶解
するものであれば、特に限定されない。その例としては
2-ピロリドン、N-メチルピロリドン、N,N-ジメチルアセ
トアミド、N,N-ジメチルホルムアミド、ジメチルスルホ
キシド、ヘキサメチルホスホルアミド、γ−ブチロラク
トンなどが挙げられる。Of all the solvents constituting the polyimide varnish of the present invention, the solvent other than the propylene glycol derivative is not particularly limited as long as it dissolves the polyimide and / or the polyimide precursor. As an example
2-pyrrolidone, N-methylpyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, dimethylsulfoxide, hexamethylphosphoramide, γ-butyrolactone and the like can be mentioned.
【0020】その他、単独ではこのポリイミド及び/又
はポリイミド前駆体を溶解させない溶媒であっても溶解
性を損なわない範囲であれば、上記溶媒に加えても構わ
ない。これらのポリイミド及び/又はポリイミド前駆体
を上記溶媒に溶解してポリイミドワニスとする方法は、
特に限定されない。In addition, even a solvent which does not dissolve the polyimide and / or the polyimide precursor by itself may be added to the above solvent as long as the solubility is not impaired. A method of dissolving these polyimides and / or polyimide precursors in the above solvent to form a polyimide varnish is
There is no particular limitation.
【0021】例えば、上記のポリイミド及び/又はポリ
イミド前駆体の反応・重合溶液をそのまま用いても良
く、又、生成したポリイミド及び/又はポリイミド前駆
体を大過剰の水、メタノールのごとき貧溶媒中に投入
し、沈殿回収した後、上記溶媒に再溶解して用いても良
い。ポリイミドワニス中の樹脂分の量は、ワニスの使用
目的により異なり特に限定されないが、例えば、液晶配
向膜の場合は2〜15重量%で、絶縁膜の場合は5〜3
0重量%である。For example, the reaction / polymerization solution of the above-mentioned polyimide and / or polyimide precursor may be used as it is, or the produced polyimide and / or polyimide precursor may be added to a large excess of water or a poor solvent such as methanol. It may be used by re-dissolving it in the above solvent after throwing in and collecting the precipitate. The amount of the resin component in the polyimide varnish varies depending on the purpose of use of the varnish and is not particularly limited. For example, it is 2 to 15% by weight in the case of a liquid crystal alignment film and 5 to 3 in the case of an insulating film.
It is 0% by weight.
【0022】又、最終的に形成されたポリイミド塗膜と
支持基板の密着性を更に向上させる目的で、本発明のポ
リイミドワニスの成分の一つとして、カップリング剤な
どの添加剤を加えることも可能である。本発明のポリイ
ミドワニスは、支持基板上に塗布し、加熱処理をするこ
とにより、支持基板上に均一膜厚のポリイミド塗膜を形
成し、電気・電子素子の絶縁膜、保護膜、更には液晶表
示素子の配向膜として使用することができる。For the purpose of further improving the adhesion between the finally formed polyimide coating film and the supporting substrate, an additive such as a coupling agent may be added as one of the components of the polyimide varnish of the present invention. It is possible. The polyimide varnish of the present invention is applied on a supporting substrate and subjected to heat treatment to form a polyimide coating film having a uniform film thickness on the supporting substrate, an insulating film of an electric / electronic element, a protective film, and further a liquid crystal. It can be used as an alignment film of a display element.
【0023】この際の塗布方法は、特に限定されるもの
ではないが、スピンコート、ロールコート、オフセット
印刷、グラビア印刷などが一般的である。ポリイミド塗
膜を形成させるための加熱処理温度は、ポリイミドワニ
スがポリイミド前駆体溶液である場合は、ポリイミド前
駆体をポリイミドに転化させるための温度が必要であ
り、 100から 350℃、好ましくは 120から 250℃の任意
の温度を選択できる。又、ポリイミドワニスがポリイミ
ド溶液である場合の加熱処理温度は、溶媒が蒸発すれば
よく、通常は80から 150℃で充分である。The coating method at this time is not particularly limited, but spin coating, roll coating, offset printing, gravure printing and the like are common. The heat treatment temperature for forming the polyimide coating film is, if the polyimide varnish is a polyimide precursor solution, a temperature for converting the polyimide precursor into polyimide, and the temperature is from 100 to 350 ° C., preferably from 120. Any temperature of 250 ° C can be selected. Further, when the polyimide varnish is a polyimide solution, the heat treatment temperature should be 80 to 150 ° C., as long as the solvent evaporates.
【0024】ポリイミド塗膜を形成させるための支持基
板は、ポリイミド塗膜を使用する用途に応じて適宜選択
することができる。例えば、半導体素子用絶縁膜、保護
膜の場合には各種配線加工されたシリコン基板であり、
液晶配向膜の場合には、透明電極付きのガラス、又は、
プラスチックフィルムなどである。The supporting substrate for forming the polyimide coating film can be appropriately selected according to the application for which the polyimide coating film is used. For example, in the case of an insulating film for a semiconductor element, a protective film is a silicon substrate on which various wirings are processed,
In the case of a liquid crystal alignment film, glass with a transparent electrode, or
For example, a plastic film.
【0025】[0025]
【実施例】以下に実施例を挙げて本発明を説明するが、
本発明はこれらに限定されるものではない。 実施例 1 2,2-ビス [4- (4-アミノフェノキシ) フェニル] プロパ
ン(以下、BAPPと略す) 41.0g (0.1モル) 、及び
1,2,3,4-シクロブタンテトラカルボン酸二無水物 19.2
g (0.098モル) をN-メチルピロリドン(以下、NMPと
略す) 340g 中、室温で10時間反応させ、ポリイミド前
駆体溶液を調製した。得られたポリイミド前駆体の還元
粘度(ηsp/c)は 1.02dl/g(0.5重量%NMP溶液、30
℃) であった。The present invention will be described below with reference to examples.
The present invention is not limited to these. Example 1 2,2-bis [4- (4-aminophenoxy) phenyl] propane (hereinafter abbreviated as BAPP) 41.0 g (0.1 mol), and
1,2,3,4-Cyclobutanetetracarboxylic dianhydride 19.2
g (0.098 mol) was reacted in 340 g of N-methylpyrrolidone (hereinafter abbreviated as NMP) at room temperature for 10 hours to prepare a polyimide precursor solution. The reduced viscosity (ηsp / c) of the obtained polyimide precursor was 1.02 dl / g (0.5 wt% NMP solution, 30
℃).
【0026】この溶液 12gにNMP 12g、1-ブトキシ-2
- プロパノール 6g を添加し、総樹脂分を 6%として透
明電極付きガラス基板に 2000rpmでスピンコートし乾燥
し、硬化させることにより厚さ約3000Åのポリイミド塗
膜を得た。得られた塗膜は凹凸のない平滑な膜であっ
た。12 g of this solution was added to 12 g of NMP and 1-butoxy-2.
-By adding 6 g of propanol and making the total resin content 6%, a glass substrate with a transparent electrode was spin-coated at 2000 rpm, dried, and cured to obtain a polyimide coating film with a thickness of about 3000 Å. The obtained coating film was a smooth film without irregularities.
【0027】実施例 2 BAPP 41.0g (0.1モル) 、及び3,4-ジカルボキシ-
1,2,3,4- テトラヒドロ-1- ナフタレンコハク酸二無水
物 29.9g (0.0995モル) をNMP 400g 中、室温で10時
間反応させ、ポリイミド前駆体溶液を調製した。得られ
たポリイミド前駆体の還元粘度(ηsp/c)は 1.14dl/g
(0.5重量%NMP溶液、30℃) であった。Example 2 41.0 g (0.1 mol) of BAPP and 3,4-dicarboxy-
A polyimide precursor solution was prepared by reacting 1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride (29.9 g, 0.0995 mol) in 400 g of NMP at room temperature for 10 hours. The reduced viscosity (ηsp / c) of the obtained polyimide precursor is 1.14dl / g
(0.5 wt% NMP solution, 30 ° C.).
【0028】得られたポリイミド前駆体溶液 50gに、イ
ミド化触媒として無水酢酸 10.8g、ピリジン 5.0g を加
え、50℃で3時間反応させ、ポリイミド溶液を調製し
た。この溶液を 500mlのメタノール中に投入し、得られ
た白色沈殿をろ別、乾燥し、白色のポリイミド粉末を得
た。得られたポリイミドの還元粘度(ηsp/c)は 1.04
dl/g(0.5重量%NMP溶液、30℃) であった。To 50 g of the obtained polyimide precursor solution, 10.8 g of acetic anhydride and 5.0 g of pyridine as an imidization catalyst were added and reacted at 50 ° C. for 3 hours to prepare a polyimide solution. This solution was put into 500 ml of methanol, and the obtained white precipitate was filtered and dried to obtain a white polyimide powder. The reduced viscosity (ηsp / c) of the obtained polyimide is 1.04.
It was dl / g (0.5 wt% NMP solution, 30 ° C.).
【0029】この粉末 6g をγ- ブチロラクトン 74g及
び、2- (2-メトキシプロポキシ) プロパノール 20gの混
合溶媒に溶解し、総樹脂分を 6%として、透明電極付き
ガラス基板にフレキソ印刷して、乾燥硬化させることに
より、厚さ約1000Åのポリイミド塗膜を得た。得られた
塗膜は凹凸のない平滑な膜であった。6 g of this powder was dissolved in a mixed solvent of 74 g of γ-butyrolactone and 20 g of 2- (2-methoxypropoxy) propanol to make the total resin content 6%, and flexographically printed on a glass substrate with a transparent electrode and dried. By curing, a polyimide coating film having a thickness of about 1000Å was obtained. The obtained coating film was a smooth film without irregularities.
【0030】実施例3 実施例1で調整したポリイミド前駆体溶液12g に1-ブト
キシ-2- プロパノール3gを添加し、総樹脂分12%として
透明電極付ガラス基板に2000rpm でスピンコートし、乾
燥硬化させることにより、厚さ約 3μのポリイミド塗膜
を得た。得られた塗膜は凹凸のない平滑な膜であった。Example 3 To 12 g of the polyimide precursor solution prepared in Example 1, 3 g of 1-butoxy-2-propanol was added, and a total resin content of 12% was spin-coated at 2000 rpm on a glass substrate with a transparent electrode, followed by dry curing. By doing so, a polyimide coating film having a thickness of about 3 μm was obtained. The obtained coating film was a smooth film without irregularities.
【0031】実施例4 実施例1で調整したポリイミド前駆体溶液12g にNMP
24g 、1-ブトキシ-2-プロパノール9gを添加し、総樹脂
分 4%として透明電極付ガラス基板に3500rpmでスピン
コートし、乾燥硬化させることにより、厚さ約1000Åの
ポリイミド塗膜を得た。得られた塗膜は凹凸のない平滑
な膜であった。Example 4 NMP was added to 12 g of the polyimide precursor solution prepared in Example 1.
24 g and 1 g of 1-butoxy-2-propanol were added, and a total resin content of 4% was spin-coated on a glass substrate with a transparent electrode at 3500 rpm and dried and cured to obtain a polyimide coating film having a thickness of about 1000 Å. The obtained coating film was a smooth film without irregularities.
【0032】比較例 1 実施例1で調製したポリイミド前駆体溶液 12gにNMP
18gを添加して総樹脂分を 6%として透明電極付きガラ
ス基板に 2000rpmでスピンコートし、乾燥硬化すること
により、厚さ約3000Åのポリイミド塗膜を得た。得られ
た塗膜は表面に細かい凹凸及びはじきがみられ平滑な膜
が得られなかった。Comparative Example 1 NMP was added to 12 g of the polyimide precursor solution prepared in Example 1.
By adding 18 g to make the total resin content 6% and spin-coating on a glass substrate with a transparent electrode at 2000 rpm, and drying and curing, a polyimide coating film with a thickness of about 3000 Å was obtained. The obtained coating film had fine irregularities and cissing on the surface, and a smooth film could not be obtained.
【0033】比較例 2 実施例1で調製したポリイミド前駆体溶液 12gにNMP
3gを添加して総樹脂分を12%として透明電極付きガラス
基板に 2000rpmでスピンコートし、乾燥硬化することに
より、厚さ約3 μのポリイミド塗膜を得た。得られた塗
膜は表面に細かい凹凸みられ平滑な膜が得られなかっ
た。Comparative Example 2 NMP was added to 12 g of the polyimide precursor solution prepared in Example 1.
3 g was added to make the total resin content 12%, and spin coating was performed at 2000 rpm on a glass substrate with a transparent electrode, followed by drying and curing to obtain a polyimide coating film having a thickness of about 3 μ. The obtained coating film had fine irregularities on the surface, and a smooth film could not be obtained.
【0034】比較例 3 実施例1で調製したポリイミド前駆体溶液 12gにNMP
33g を添加して総樹脂分を 4%として透明電極付きガラ
ス基板に 3500rpmでスピンコートし、乾燥硬化すること
により、厚さ約1000Åのポリイミド塗膜を得た。得られ
た塗膜は表面に細かい凹凸及びはじきがみられ平滑な膜
が得られなかった。Comparative Example 3 NMP was added to 12 g of the polyimide precursor solution prepared in Example 1.
33 g was added to make the total resin content 4%, and spin coating was performed on a glass substrate with a transparent electrode at 3500 rpm, followed by drying and curing to obtain a polyimide coating film having a thickness of about 1000Å. The obtained coating film had fine irregularities and cissing on the surface, and a smooth film could not be obtained.
【0035】比較例 4 実施例2で得られたポリイミド粉末 6g をγ−ブチロラ
クトン 94gに溶解し、総樹脂分を 6%として、透明電極
付きガラス基板にフレキソ印刷して乾燥した。得られた
塗膜は表面に細かい凹凸がみられ平滑な膜が得られなか
った。Comparative Example 4 6 g of the polyimide powder obtained in Example 2 was dissolved in 94 g of γ-butyrolactone to make the total resin content 6%, and flexographic printing was performed on a glass substrate with a transparent electrode and drying. The obtained coating film had fine irregularities on the surface, and a smooth film could not be obtained.
【0036】[0036]
【発明の効果】本発明のポリイミドワニスは、各種支持
基板上に塗布、加熱処理を施すことによりポリイミド塗
膜を形成させ、電気・電子素子用の絶縁膜・保護膜或い
は液晶配向膜等として使用するものであり、凹凸のない
平滑な塗膜を形成することができる。EFFECT OF THE INVENTION The polyimide varnish of the present invention is used as an insulating film / protective film or liquid crystal alignment film for electric / electronic elements by forming a polyimide coating film by coating and heat treatment on various supporting substrates. Therefore, it is possible to form a smooth coating film having no unevenness.
Claims (7)
を有機溶媒に溶解し、該溶液を支持基板上に塗布し、加
熱処理を施して、支持基板上にポリイミド塗膜を形成す
るのに使用されるポリイミドワニスにおいて、有機溶媒
の5〜60重量%が、一般式[I] 【化1】 (式中、nは1又は2であり、Rは水素、炭素数1以上
4以下のアルキル基、アルケニル基、アルカノイル基を
表す。)で表されるプロピレングリコール誘導体である
ことを特徴とするポリイミドワニス。1. Used to form a polyimide coating film on a supporting substrate by dissolving a polyimide and / or a polyimide precursor in an organic solvent, coating the solution on the supporting substrate, and subjecting the solution to heat treatment. In the polyimide varnish, 5 to 60% by weight of the organic solvent is represented by the general formula [I] (In the formula, n is 1 or 2, and R represents hydrogen, an alkyl group having 1 to 4 carbon atoms, an alkenyl group, and an alkanoyl group.) A propylene glycol derivative represented by the formula: varnish.
コール誘導体が1-メトキシ-2- プロパノール、1-エトキ
シ-2- プロパノール、1-ブトキシ-2- プロパノール、1-
フェノキシ-2- プロパノール、プロピレングリコールモ
ノアセテート、プロピレングリコールジアセテート、プ
ロピレングリコール-1- モノメチルエーテル-2- アセテ
ート、プロピレングリコール-1- モノエチルエーテル-2
- アセテート、ジプロピレングリコール、2- (2-メトキ
シプロポキシ) プロパノール、2- (2-エトキシプロポキ
シ) プロパノール及び2- (2-ブトキシプロポキシ) プロ
パノールの中から選ばれる少なくとも一種のプロピレン
グリコール誘導体である請求項1記載のポリイミドワニ
ス。2. The propylene glycol derivative represented by the general formula [I] is 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol, 1-
Phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2
-At least one propylene glycol derivative selected from acetate, dipropylene glycol, 2- (2-methoxypropoxy) propanol, 2- (2-ethoxypropoxy) propanol and 2- (2-butoxypropoxy) propanol. Item 1. The polyimide varnish according to Item 1.
コール誘導体が1-ブトキシ-2- プロパノール、2- (2-メ
トキシプロポキシ) プロパノールから選ばれる少なくと
も一種のプロピレングリコール誘導体である請求項2記
載のポリイミドワニス。3. The propylene glycol derivative represented by the general formula [I] is at least one propylene glycol derivative selected from 1-butoxy-2-propanol and 2- (2-methoxypropoxy) propanol. Of polyimide varnish.
ある請求項1記載のポリイミドワニス。4. The polyimide varnish according to claim 1, which is for forming a liquid crystal alignment film.
重量%である請求項4のポリイミドワニス。5. The resin content in the polyimide varnish is 2 to 15
The polyimide varnish of claim 4, wherein the polyimide varnish is in% by weight.
請求項1記載のポリイミドワニス。6. The polyimide varnish according to claim 1, which is for forming an insulating film.
%である請求項6のポリイミドワニス。7. The resin content in the polyimide varnish is 5 to 30.
% Of the polyimide varnish of claim 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19391894A JP3780534B2 (en) | 1993-08-19 | 1994-08-18 | Polyimide varnish |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20516593 | 1993-08-19 | ||
JP5-205165 | 1993-08-19 | ||
JP19391894A JP3780534B2 (en) | 1993-08-19 | 1994-08-18 | Polyimide varnish |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07109438A true JPH07109438A (en) | 1995-04-25 |
JP3780534B2 JP3780534B2 (en) | 2006-05-31 |
Family
ID=26508170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19391894A Expired - Lifetime JP3780534B2 (en) | 1993-08-19 | 1994-08-18 | Polyimide varnish |
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JP (1) | JP3780534B2 (en) |
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WO2014084309A1 (en) * | 2012-11-29 | 2014-06-05 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display element |
CN104956259A (en) * | 2012-11-29 | 2015-09-30 | 日产化学工业株式会社 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display element |
JPWO2014084309A1 (en) * | 2012-11-29 | 2017-01-05 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film, and liquid crystal display element |
JP2015210364A (en) * | 2014-04-25 | 2015-11-24 | Jsr株式会社 | Liquid crystal aligning agent, liquid crystal alignment film, and liquid crystal display element |
JP2016080969A (en) * | 2014-10-21 | 2016-05-16 | Jsr株式会社 | Liquid crystal alignment agent, liquid crystal alignment film, and liquid crystal display device |
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