JPH0698479B2 - Method of soldering target material for sputtering to backing plate - Google Patents
Method of soldering target material for sputtering to backing plateInfo
- Publication number
- JPH0698479B2 JPH0698479B2 JP16645186A JP16645186A JPH0698479B2 JP H0698479 B2 JPH0698479 B2 JP H0698479B2 JP 16645186 A JP16645186 A JP 16645186A JP 16645186 A JP16645186 A JP 16645186A JP H0698479 B2 JPH0698479 B2 JP H0698479B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- target material
- alloy
- backing plate
- soldering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005476 soldering Methods 0.000 title claims description 19
- 239000013077 target material Substances 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 11
- 238000004544 sputter deposition Methods 0.000 title claims description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 230000008685 targeting Effects 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 11
- 229910017755 Cu-Sn Inorganic materials 0.000 description 7
- 229910017927 Cu—Sn Inorganic materials 0.000 description 7
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、スパツタリング用のAlまたはAl合金製ター
ゲツト材をCuまたはVu合金製バツキングプレート（冷却
板）に強固にはんだ付けする方法に関するものである。TECHNICAL FIELD The present invention relates to a method for firmly soldering an Al or Al alloy target material for sputtering to a Cu or Vu alloy backing plate (cooling plate). Is.
一般に、AlまたはAl合金製ターゲツト材をスパツタリン
グに用いる場合には、CuまたはCu合金製バツキングプレ
ートにはんだ付けした状態で実用に供されている。In general, when an Al or Al alloy target material is used for sputtering, it is put to practical use in a state of being soldered to a Cu or Cu alloy backing plate.
従来、かかるターゲツト材のバツキングプレートへのは
んだ付けには、Sn合金はんだが用いられているが、Alま
たはAl合金に対するSn合金はんだのぬれ性がきわめて悪
く、このためAlまたはAl合金製ターゲツト材のはんだ付
け面に、Sn合金はんだとのぬれ性が良好なCu層を10〜20
μｍの平均層厚で形成した状態で、はんだ付けを行なつ
ている。Conventionally, Sn alloy solder has been used for soldering the target material to the backing plate, but the wettability of the Sn alloy solder to Al or Al alloy is extremely poor, and therefore the target material made of Al or Al alloy is used. A Cu layer with good wettability with Sn alloy solder on the soldering surface of 10 to 20
Soldering is performed with the average layer thickness of μm.
しかし、上記のターゲツト材のはんだ付け面にCu層を形
成して行なう従来のはんだ付け方法では、Cu層が相対的
に厚いことに原因して、はんだ付け時およびスパツタリ
ング時にはんだ付け部にきわめて脆いCu-Snの金属間化
合物層が形成されるようになり、この結果、特に近年の
大型化したターゲツト材では、残留歪や熱衝撃などによ
つて実操業中に剥離が生じ、事故発生の原因となるほ
か、さらに使用済のターゲツト材をバツキングプレート
からホツトプレートなどを用いて加熱して分離しようと
してても、前記Cu-Snの金属間化合物層は融点が高いた
めに、単なる加熱分離は困難であり、ハンマなどによる
こう打衝撃を加えるなどの予分の手間を必要とするもの
である。However, in the conventional soldering method performed by forming a Cu layer on the soldering surface of the above target material, due to the relatively thick Cu layer, the soldering portion during soldering and sputtering is extremely brittle. A Cu-Sn intermetallic compound layer is now being formed, and as a result, especially in the recent large-sized target materials, delamination occurs during actual operation due to residual strain and thermal shock, causing the accident. In addition, even if an attempt is made to heat and separate the used target material from the backing plate using a hot plate, etc., the Cu-Sn intermetallic compound layer has a high melting point, so that simple heat separation is not possible. It is difficult, and it requires time and effort for the preliminary work such as hitting with a hammer.
そこで、本発明者等は、上述のような観点から、脆い金
属間化合物層の形成なく、かつ強固にAlまたはAl合金製
ターゲツト材をCuまたはCu合金製バツキングプレート
に、Sn合金はんだを用いて接合すべく研究を行なつた結
果、 上記のはんだ付けしようとする部材のはんだ付け面のそ
れぞれに、Ni層を介して、相対的に薄いCu層を形成した
状態で、Sn合金はんだを用いてはんだ付けを行なうと、
前記Ni層には、Cu-Snの金属間化合物層の形成を抑制す
る作用があるので、上記のようにCu層を相対的に薄くし
たことと合まつて、はんだ付け部に脆い金属間化合物層
の形成が皆無となることから、はんだ付け部にSn合金は
んだのもつ良好な靱性が確保され、この結果歪や衝撃な
どによつてターゲツト材がバツキングプレートから剥離
することがなくなり、かつ加熱による使用済ターゲツト
材の分離も可能となり、さらに前記Cu層がNi層に対する
Sn合金はんだのぬれ性を著しく向上させることから、強
固な接合強度をもつたはんだ付け部が形成されるように
なるという知見を得たのである。Therefore, the present inventors, from the above-mentioned viewpoint, without forming a brittle intermetallic compound layer, and firmly Al or Al alloy target material Cu or Cu alloy backing plate, using Sn alloy solder As a result of conducting research to bond the Sn alloy with each other, Sn alloy solder was used with a relatively thin Cu layer formed on each of the soldering surfaces of the members to be soldered through the Ni layer. And soldering
The Ni layer has an action of suppressing the formation of an intermetallic compound layer of Cu-Sn, so combined with making the Cu layer relatively thin as described above, a brittle intermetallic compound in the soldered portion. Since no layer is formed, good toughness of the Sn alloy solder is secured in the soldered part, and as a result, the target material does not separate from the backing plate due to strain or impact, and heating It is also possible to separate the used target material by the
The inventors have obtained the knowledge that the solderability with strong joint strength will be formed because the wettability of the Sn alloy solder is remarkably improved.
この発明は、上記知見にもとづいてなされたものであつ
て、AlまたはAl合金製ターゲツト材を、CuまたはCu合金
製バツキングプレートにはんだ付けするに際して、 これら両部材のはんだ付け面に、それぞれ平均層厚:1〜
15μｍのNi層を介して、平均層厚:0.1〜５μｍのCu層を
形成した後、 これら両部材をSn合金はんだを用いてはんだ付けするこ
とからなるスパツタリング用ターゲツト材のバツキング
プレートへのはんだ付け方法に特徴を有するものであ
る。This invention was made on the basis of the above findings, and when soldering an Al or Al alloy target material to a Cu or Cu alloy backing plate, on the soldering surfaces of these two members, respectively, an average Layer thickness: 1 ~
After forming a Cu layer with an average layer thickness of 0.1 to 5 μm via a Ni layer of 15 μm, solder both these members with Sn alloy solder to the sputtering plate of the sputtering targeting material. It has a feature in the attaching method.
つぎに、この発明の方法において、Ni層およびCu層の平
均層厚を上記の通りに限定した理由を説明する。Next, in the method of the present invention, the reason why the average layer thickness of the Ni layer and the Cu layer is limited as described above will be described.
（ａ）Ni層の平均層厚 Ni層には、上記の通り脆い金属間化合物層の形成を抑制
するほか、特にターゲツト材がSn合金はんだにさらされ
て接合強度が低下するようになるのを防止する作用があ
るが、その平均層厚が１μｍ未満では前記作用に所望の
効果が得られず、一方その平均層厚を15μｍを越えて厚
くしても前記作用は飽和するだけであり、経済性を考慮
して、その平均層厚を１〜15μｍと定めた。(A) Average Layer Thickness of Ni Layer In the Ni layer, the formation of brittle intermetallic compound layer is suppressed as described above, and in particular, the target material is exposed to Sn alloy solder to reduce the joint strength. Although it has a preventing effect, if the average layer thickness is less than 1 μm, the desired effect cannot be obtained, and even if the average layer thickness exceeds 15 μm, the above-mentioned action is saturated. In consideration of the property, the average layer thickness was set to 1 to 15 μm.
（ｂ）Cu層の平均層厚 上記のようにCu層には、Ni層とSn合金はんだとのぬれ性
を向上させて強固な接合強度を確保する作用があるが、
その平均層厚が0.1μｍ未満では所望の接合強度を確保
することができず、一方その平均層厚が５μｍを越える
と、はんだ付け部に脆いCu-Snの金属間化合物層が形成
されるようになることから、その平均層厚を0.1〜５μ
ｍと定めた。(B) Average Layer Thickness of Cu Layer As described above, the Cu layer has the function of improving the wettability between the Ni layer and the Sn alloy solder to secure a strong joint strength.
If the average layer thickness is less than 0.1 μm, the desired bonding strength cannot be ensured. On the other hand, if the average layer thickness exceeds 5 μm, a brittle Cu-Sn intermetallic compound layer is formed at the soldered part. Therefore, the average layer thickness is 0.1 to 5μ.
It was defined as m.
つぎに、この発明の方法を実施例により具体的に説明す
る。Next, the method of the present invention will be specifically described by way of Examples.
ターゲツト材として、いずれも平面:10mm×10mm、厚さ:
5mmの寸法を有し、かつそれぞれ第１表に示される組成
をもつたAlまたはAl合金製試験片を用意し、またバツキ
ングプレートとして、直径:20mmφ×厚さ:10mmの寸法を
有し、かつ同じくそれぞれ第１表に示される組成をもつ
たCuまたはCu合金製試験片を用意し、これら両試験片の
はんだ付け面に、通常のイオンプレーティング法を用い
て、それぞれ第１表に示される層厚のNi層およびCu層を
形成し、ついでこれら両試験片を、同じく第１表に示さ
れる組成、並びに平面:10mm×10mm、厚さ:0.3mmの寸法
をもつ たSn合金はんだをはさみ、かつAlまたはAl合金製試験片
を上部に位置せしめて重ね合わせ、さらに10Kgの重りを
乗せ、この状態で、１×10-4Torrの真空中、温度:250℃
に３分間保持の条件で、はんだ付けを行ない、さらにス
パツタリング条件に相当する温度:140℃に50時間保持の
加熱処理を施すことによつて本発明法１〜８および従来
法１〜３をそれぞれ実施した。As a target material, both are flat: 10 mm x 10 mm, thickness:
Prepare specimens made of Al or Al alloy having dimensions of 5 mm and having the compositions shown in Table 1, and as a backing plate, have dimensions of diameter: 20 mmφ × thickness: 10 mm, Also, prepare test specimens made of Cu or Cu alloy each having the composition shown in Table 1, and use the ordinary ion plating method on the soldering surfaces of both of these test specimens to show them in Table 1. A Ni layer and a Cu layer having a layer thickness shown in Table 1 are formed, and then both of these test pieces have the same composition as shown in Table 1 and the dimensions of plane: 10 mm × 10 mm, thickness: 0.3 mm. Sn alloy solder is sandwiched between them, and the Al or Al alloy test piece is placed on top of each other and stacked, and a weight of 10 kg is further placed. In this state, in a vacuum of 1 × 10 −4 Torr, temperature: 250 ° C.
The method of the present invention 1 to 8 and the conventional methods 1 to 3 are carried out by soldering under the condition of holding for 3 minutes, and by performing a heat treatment at a temperature corresponding to the spattering condition of 140 ° C. for 50 hours. Carried out.
ついで、この本発明法１〜８および従来法１〜３によつ
て得られたはんだ付け試験片について、はんだ付け部の
剪断強度および溶融温度を測定した。なお、剪断強度は
接合強度を、また溶融温度はSn-Cuの金属間化合物層の
形成の有無をそれぞれ評価するためのものである。Then, with respect to the soldering test pieces obtained by the present methods 1 to 8 and the conventional methods 1 to 3, the shear strength and the melting temperature of the soldered portion were measured. The shear strength is for evaluating the bonding strength, and the melting temperature is for evaluating whether or not the Sn-Cu intermetallic compound layer is formed.
〔発明の効果〕 第１表に示される結果から、本発明法１〜８によれば、
いずれもCu-Snの金属間化合物層の形成なく、高い接合
強度が得られるのに対して、従来法１〜３では、いずれ
も高い接合強度が得られるものの、Cu-Snの金属間化合
物層の形成が避けられないことが明らかである。[Effects of the Invention] From the results shown in Table 1, according to the methods 1 to 8 of the present invention,
In both cases, high bonding strength can be obtained without the formation of Cu-Sn intermetallic compound layer, whereas in conventional methods 1 to 3, although high bonding strength can be obtained, Cu-Sn intermetallic compound layer It is clear that the formation of
上述のように、この発明のはんだ付け法によれば、はん
だ付け部にCu-Snの金属間化合物層の形成なく、高い接
合強度が得られ、したがつてターゲツト材が大型化して
も、これがバツキングプレートから剥離することが皆無
となるほか、使用済ターゲツト材のバツキングプレート
からの加熱分離が可能となるなど工業上有用な効果が得
られるのである。As described above, according to the soldering method of the present invention, a high bonding strength can be obtained without forming a Cu-Sn intermetallic compound layer in the soldered portion, and therefore even if the target material is large, In addition to eliminating peeling from the backing plate, industrially useful effects such as heat separation of the used target material from the backing plate are possible.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−169166（ＪＰ，Ａ) 特開 昭62−267067（ＪＰ，Ａ) 特開 昭63−20154（ＪＰ，Ａ) 特公 平６−9735（ＪＰ，Ｂ２) ─────────────────────────────────────────────────── ─── Continuation of front page (56) References JP 61-169166 (JP, A) JP 62-267067 (JP, A) JP 63-20154 (JP, A) JP-B 6- 9735 (JP, B2)
Claims (1)
はCu合金製バツキングプレートにはんだ付けするに際し
て、 これら両部材のはんだ付け面に、それぞれ平均層厚:1〜
15μｍのNi層を介して、平均層厚:0.1〜５μｍのCu層を
形成した後、 これら両部材をSn合金はんだを用いてはんだ付けするこ
とを特徴とするスパツタリング用ターゲツト材のバツキ
ングプレートへのはんだ付け法。1. When soldering an Al or Al alloy target material to a Cu or Cu alloy backing plate, the average layer thickness of each of these members is 1 to 1
After forming a Cu layer with an average layer thickness of 0.1 to 5 μm via a Ni layer of 15 μm, these members are soldered using Sn alloy solder to a backing plate of a targeting material for sputtering. Soldering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16645186A JPH0698479B2 (en) | 1986-07-15 | 1986-07-15 | Method of soldering target material for sputtering to backing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16645186A JPH0698479B2 (en) | 1986-07-15 | 1986-07-15 | Method of soldering target material for sputtering to backing plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6320158A JPS6320158A (en) | 1988-01-27 |
| JPH0698479B2 true JPH0698479B2 (en) | 1994-12-07 |
Family
ID=15831646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16645186A Expired - Lifetime JPH0698479B2 (en) | 1986-07-15 | 1986-07-15 | Method of soldering target material for sputtering to backing plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0698479B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0313570A (en) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | Device for producing semiconductor and target for the device |
| JP5469846B2 (en) * | 2008-07-11 | 2014-04-16 | 国立大学法人群馬大学 | Method of joining aluminum member and copper member |
-
1986
- 1986-07-15 JP JP16645186A patent/JPH0698479B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320158A (en) | 1988-01-27 |
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