JPH0684888A - 絶縁膜の形成方法 - Google Patents
絶縁膜の形成方法Info
- Publication number
- JPH0684888A JPH0684888A JP33472392A JP33472392A JPH0684888A JP H0684888 A JPH0684888 A JP H0684888A JP 33472392 A JP33472392 A JP 33472392A JP 33472392 A JP33472392 A JP 33472392A JP H0684888 A JPH0684888 A JP H0684888A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- material gas
- oxidizing gas
- organic silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
(57)【要約】
【目的】 有機シラン材料ガスと酸化性ガスを用い、プ
ラズマＣＶＤ法により良好な膜質、特に優れた電気特性
を有する絶縁膜の形成方法を提供すること。 【構成】 有機シラン材料ガスと酸化性ガスを成膜チャ
ンバーに供給し、プラズマＣＶＤ法によって絶縁膜を形
成する方法において、成膜チャンバー内に酸化性ガスを
先に導入し、プラズマ放電を起こし、所定の時間ｔ1 経
過後、放電を中断させることなく、有機シラン材料ガス
を導入して、絶縁膜を形成後、放電を中断することなく
有機シラン材料ガスの供給を止め、この後、酸化性ガス
のプラズマ放電を所定の時間ｔ2 続ける。
ラズマＣＶＤ法により良好な膜質、特に優れた電気特性
を有する絶縁膜の形成方法を提供すること。 【構成】 有機シラン材料ガスと酸化性ガスを成膜チャ
ンバーに供給し、プラズマＣＶＤ法によって絶縁膜を形
成する方法において、成膜チャンバー内に酸化性ガスを
先に導入し、プラズマ放電を起こし、所定の時間ｔ1 経
過後、放電を中断させることなく、有機シラン材料ガス
を導入して、絶縁膜を形成後、放電を中断することなく
有機シラン材料ガスの供給を止め、この後、酸化性ガス
のプラズマ放電を所定の時間ｔ2 続ける。
Description
【０００１】
【産業上の利用分野】本発明は絶縁膜の形成方法に関
し、ことに薄膜トランジスタ等のゲート絶縁膜の形成に
きわめて有用な方法に関するものである。
し、ことに薄膜トランジスタ等のゲート絶縁膜の形成に
きわめて有用な方法に関するものである。
【０００２】
【従来の技術】一般に、有機シラン材料と酸化性ガスを
用いたプラズマＣＶＤ法による絶縁膜の形成は図３に示
すようなプラズマＣＶＤ装置を用いる。酸化性ガスは酸
化性ガス導入口１０より開閉バルブ２０、マスフローコ
ントローラー１２を通されて成膜チャンバー１４内に導
入される。一方、有機シラン材料ガスは気化器１１より
開閉バルブ２１、マスフローコントローラー１３を通さ
れて、上記酸化性ガスと同時に成膜チャンバー１４内に
導入される。圧力安定後、高周波プラズマ放電により有
機シラン材料ガスを分解、酸化させて基板１７上にＳｉ
酸化膜を形成させる。所定の膜厚が形成された後、放電
を止め、両方のガスの供給を止めるという手順でＳｉ酸
化膜の形成が行われる。図４は、従来の絶縁膜の形成方
法を説明するための主要な操作のタイムチャートを示す
ものである。まず、時刻６において有機シラン材料ガス
の開閉バルブ２１と酸化性ガスの開閉バルブ２０とが同
時に閉から開にされ、成膜チャンバー１４内に両方のガ
スが導入され、圧力安定化の為に、時間ｔ0 経過後、時
刻７において高周波電源１９より高周波電力が印加さ
れ、プラズマ放電が開始され、基板１７上に成膜が開始
される。所定の膜厚成膜後、時刻８において高周波電力
が切られ、同時に有機シラン材料ガスの開閉バルブ２１
と、酸化性ガスの開閉バルブ２０とが閉じられる。
用いたプラズマＣＶＤ法による絶縁膜の形成は図３に示
すようなプラズマＣＶＤ装置を用いる。酸化性ガスは酸
化性ガス導入口１０より開閉バルブ２０、マスフローコ
ントローラー１２を通されて成膜チャンバー１４内に導
入される。一方、有機シラン材料ガスは気化器１１より
開閉バルブ２１、マスフローコントローラー１３を通さ
れて、上記酸化性ガスと同時に成膜チャンバー１４内に
導入される。圧力安定後、高周波プラズマ放電により有
機シラン材料ガスを分解、酸化させて基板１７上にＳｉ
酸化膜を形成させる。所定の膜厚が形成された後、放電
を止め、両方のガスの供給を止めるという手順でＳｉ酸
化膜の形成が行われる。図４は、従来の絶縁膜の形成方
法を説明するための主要な操作のタイムチャートを示す
ものである。まず、時刻６において有機シラン材料ガス
の開閉バルブ２１と酸化性ガスの開閉バルブ２０とが同
時に閉から開にされ、成膜チャンバー１４内に両方のガ
スが導入され、圧力安定化の為に、時間ｔ0 経過後、時
刻７において高周波電源１９より高周波電力が印加さ
れ、プラズマ放電が開始され、基板１７上に成膜が開始
される。所定の膜厚成膜後、時刻８において高周波電力
が切られ、同時に有機シラン材料ガスの開閉バルブ２１
と、酸化性ガスの開閉バルブ２０とが閉じられる。
【０００３】
【発明が解決しようとする課題】しかしながら、従来の
絶縁膜の形成方法ではプラズマ放電の初期においては、
酸素ラジカル、酸素イオンの発生量が少なく、酸化が十
分に進まず有機シラン材料ガスの中間反応生成物がＳｉ
酸化膜になりきらずに堆積するため、Ｓｉ酸化膜中にＯ
Ｈ基、Ｃ等の不純物が多量に含まれてしまう。また、成
膜終了時にも、プラズマ放電を停止すると、成膜チャン
バー１４内に存在する未反応の有機シラン材料ガスやそ
の中間反応生成物がＳｉ酸化膜表面に堆積してしまう。
このように、従来の絶縁膜の形成方法では成膜したＳｉ
酸化膜の基板１７との界面および表面にＯＨ基、Ｃ等の
不純物が多量に含まれ、膜質、特に電気特性が悪化して
いた。特にＴＦＴ等のゲート絶縁膜に用いる場合には大
きな問題となっていた。そこで、本発明の目的は有機シ
ラン材料ガスと酸化性ガスを用い、プラズマＣＶＤ法に
より良好な膜質、特に優れた電気特性を有する絶縁膜の
形成方法を提供することにある。
絶縁膜の形成方法ではプラズマ放電の初期においては、
酸素ラジカル、酸素イオンの発生量が少なく、酸化が十
分に進まず有機シラン材料ガスの中間反応生成物がＳｉ
酸化膜になりきらずに堆積するため、Ｓｉ酸化膜中にＯ
Ｈ基、Ｃ等の不純物が多量に含まれてしまう。また、成
膜終了時にも、プラズマ放電を停止すると、成膜チャン
バー１４内に存在する未反応の有機シラン材料ガスやそ
の中間反応生成物がＳｉ酸化膜表面に堆積してしまう。
このように、従来の絶縁膜の形成方法では成膜したＳｉ
酸化膜の基板１７との界面および表面にＯＨ基、Ｃ等の
不純物が多量に含まれ、膜質、特に電気特性が悪化して
いた。特にＴＦＴ等のゲート絶縁膜に用いる場合には大
きな問題となっていた。そこで、本発明の目的は有機シ
ラン材料ガスと酸化性ガスを用い、プラズマＣＶＤ法に
より良好な膜質、特に優れた電気特性を有する絶縁膜の
形成方法を提供することにある。
【０００４】
【課題を解決するための手段】かかる課題は、有機シラ
ン材料ガスと酸化性ガスを成膜チャンバーに供給し、プ
ラズマＣＶＤ法によって絶縁膜を形成する方法におい
て、成膜チャンバー内に酸化性ガスを先に導入し、プラ
ズマ放電を起こし、所定の時間ｔ1 経過後、放電を中断
させることなく、有機シラン材料ガスを導入して、絶縁
膜を形成後、放電を中断することなく有機シラン材料ガ
スの供給を止め、この後、酸化性ガスのプラズマ放電を
所定の時間ｔ2 続ける方法で解決される。
ン材料ガスと酸化性ガスを成膜チャンバーに供給し、プ
ラズマＣＶＤ法によって絶縁膜を形成する方法におい
て、成膜チャンバー内に酸化性ガスを先に導入し、プラ
ズマ放電を起こし、所定の時間ｔ1 経過後、放電を中断
させることなく、有機シラン材料ガスを導入して、絶縁
膜を形成後、放電を中断することなく有機シラン材料ガ
スの供給を止め、この後、酸化性ガスのプラズマ放電を
所定の時間ｔ2 続ける方法で解決される。
【０００５】また、有機シラン材料ガスと酸化性ガスを
成膜チャンバーに供給し、プラズマＣＶＤ法によって絶
縁膜を形成する方法において、成膜チャンバー内に酸化
性ガスを先に導入し、プラズマ放電を起こし、成膜中は
プラズマ放電、酸化性ガスの供給は中断することなく、
有機シラン材料ガスの供給を間欠的に行う方法で解決さ
れる。
成膜チャンバーに供給し、プラズマＣＶＤ法によって絶
縁膜を形成する方法において、成膜チャンバー内に酸化
性ガスを先に導入し、プラズマ放電を起こし、成膜中は
プラズマ放電、酸化性ガスの供給は中断することなく、
有機シラン材料ガスの供給を間欠的に行う方法で解決さ
れる。
【０００６】以下、本発明を詳しく説明する。図１に本
発明の絶縁膜の形成方法の第一の例を説明するための主
要な操作のタイムチャートを示す。時刻１において図３
に示したプラズマＣＶＤ装置の酸化性ガスの開閉バルブ
２０を閉から開にし、成膜チャンバー１４内に酸化性ガ
スを導入する。ついで、圧力安定化の為時間ｔ0 後、時
刻２において高周波電源１９より高周波電力を印加し
て、プラズマ放電を開始する。時刻３において有機シラ
ン材料ガスの開閉バルブ２１を開にし、成膜チャンバー
１４内に有機シラン材料ガスを導入すると、絶縁膜の形
成が開始される。所定の膜厚成膜後、時刻４において有
機シラン材料ガスの開閉バルブ２１を閉じ、成膜チャン
バー１４内に酸化性ガスのみを供給し、プラズマ放電を
継続する。時間ｔ2 経過後、時刻５において高周波電力
を切り、同時に酸化性ガスの開閉バルブ２０を閉じる。
発明の絶縁膜の形成方法の第一の例を説明するための主
要な操作のタイムチャートを示す。時刻１において図３
に示したプラズマＣＶＤ装置の酸化性ガスの開閉バルブ
２０を閉から開にし、成膜チャンバー１４内に酸化性ガ
スを導入する。ついで、圧力安定化の為時間ｔ0 後、時
刻２において高周波電源１９より高周波電力を印加し
て、プラズマ放電を開始する。時刻３において有機シラ
ン材料ガスの開閉バルブ２１を開にし、成膜チャンバー
１４内に有機シラン材料ガスを導入すると、絶縁膜の形
成が開始される。所定の膜厚成膜後、時刻４において有
機シラン材料ガスの開閉バルブ２１を閉じ、成膜チャン
バー１４内に酸化性ガスのみを供給し、プラズマ放電を
継続する。時間ｔ2 経過後、時刻５において高周波電力
を切り、同時に酸化性ガスの開閉バルブ２０を閉じる。
【０００７】圧力安定化時間ｔ0 は通常０．５〜２分程
度とされる。酸化性ガスのみを成膜チャンバー１４内に
供給しているプラズマ放電時間ｔ1およびｔ2はそれぞれ
１０秒以上であれば安定するが、０．５〜２０分の範囲
が好ましい。
度とされる。酸化性ガスのみを成膜チャンバー１４内に
供給しているプラズマ放電時間ｔ1およびｔ2はそれぞれ
１０秒以上であれば安定するが、０．５〜２０分の範囲
が好ましい。
【０００８】有機シラン材料としては、テトラエチルオ
ルソシリケイト（以下、ＴＥＯＳと略記する。）、ジエ
チルシラン、トリエトキシシラン、テトラメチルシクロ
テトラシロキサンなどの各種有機シラン材料が用いられ
る。酸化性ガスとしては、酸素、亜酸化窒素、オゾン含
有酸素等が用いられる。
ルソシリケイト（以下、ＴＥＯＳと略記する。）、ジエ
チルシラン、トリエトキシシラン、テトラメチルシクロ
テトラシロキサンなどの各種有機シラン材料が用いられ
る。酸化性ガスとしては、酸素、亜酸化窒素、オゾン含
有酸素等が用いられる。
【０００９】つぎに、本発明の絶縁膜の形成方法の第二
の例を説明する。図２に、この第二の例の絶縁膜の形成
方法を説明するための主要な操作のタイムチャートを示
す。この絶縁膜の形成方法が上述の第一の例と異なると
ころは、時刻３から時刻４の間において、プラズマ放
電、酸化性ガスの供給は中断することなく、有機シラン
材料ガスの供給を行い続ける代わりに、有機シラン材料
ガスの供給を間欠的に行う。
の例を説明する。図２に、この第二の例の絶縁膜の形成
方法を説明するための主要な操作のタイムチャートを示
す。この絶縁膜の形成方法が上述の第一の例と異なると
ころは、時刻３から時刻４の間において、プラズマ放
電、酸化性ガスの供給は中断することなく、有機シラン
材料ガスの供給を行い続ける代わりに、有機シラン材料
ガスの供給を間欠的に行う。
【００１０】その方法の一例としては、時刻３におい
て、プラズマ放電、酸化性ガスの供給は中断することな
く、有機シラン材料ガスの開閉バルブ２１を開にし、成
膜チャンバー１４内に有機シラン材料ガスを導入して、
絶縁膜の形成を開始させる。そして、時間ｔA経過後、
有機シラン材料ガスの開閉バルブ２１を閉じ、成膜チャ
ンバー１４内に酸化性ガスのみを供給し、プラズマ放電
を継続する。時間ｔB経過後、再び有機シラン材料ガス
の開閉バルブ２１を開にし、成膜チャンバー１４内に有
機シラン材料ガスを導入する。このように有機シラン材
料ガスの供給は開閉バルブ２１の開閉動作を複数回繰り
返すことにより間欠的に行われる。そして、所定の膜厚
成膜後、時刻４において有機シラン材料ガスの開閉バル
ブ２１を閉じ、成膜チャンバー１４内に酸化性ガスのみ
を供給し、プラズマ放電を継続する。
て、プラズマ放電、酸化性ガスの供給は中断することな
く、有機シラン材料ガスの開閉バルブ２１を開にし、成
膜チャンバー１４内に有機シラン材料ガスを導入して、
絶縁膜の形成を開始させる。そして、時間ｔA経過後、
有機シラン材料ガスの開閉バルブ２１を閉じ、成膜チャ
ンバー１４内に酸化性ガスのみを供給し、プラズマ放電
を継続する。時間ｔB経過後、再び有機シラン材料ガス
の開閉バルブ２１を開にし、成膜チャンバー１４内に有
機シラン材料ガスを導入する。このように有機シラン材
料ガスの供給は開閉バルブ２１の開閉動作を複数回繰り
返すことにより間欠的に行われる。そして、所定の膜厚
成膜後、時刻４において有機シラン材料ガスの開閉バル
ブ２１を閉じ、成膜チャンバー１４内に酸化性ガスのみ
を供給し、プラズマ放電を継続する。
【００１１】有機シラン材料ガスの供給時間ｔAおよび
供給停止時間ｔBはそれぞれ１０秒以上あれば放電は安
定するが、０．５〜１０分の範囲が好ましい。開閉動作
の繰り返しの回数は多い方が特性は良くなるが、処理時
間との兼ね合いから実際の成膜においては２〜１０回で
行うことが好ましい。
供給停止時間ｔBはそれぞれ１０秒以上あれば放電は安
定するが、０．５〜１０分の範囲が好ましい。開閉動作
の繰り返しの回数は多い方が特性は良くなるが、処理時
間との兼ね合いから実際の成膜においては２〜１０回で
行うことが好ましい。
【００１２】この発明の絶縁膜の形成方法においては、
プラズマ放電直後の不安定時には有機シラン材料ガスを
供給せず十分に酸素ラジカル、酸素イオンを発生させ、
成膜チャンバー内及び絶縁膜が形成される基板上の吸着
分子を減少させ、酸素ラジカルおよび酸素イオンが十分
に発生した状態で有機シラン材料ガスを導入し成膜する
ため、成膜初期に形成される絶縁膜中のＯＨ基、Ｃ等の
不純物が減少する。
プラズマ放電直後の不安定時には有機シラン材料ガスを
供給せず十分に酸素ラジカル、酸素イオンを発生させ、
成膜チャンバー内及び絶縁膜が形成される基板上の吸着
分子を減少させ、酸素ラジカルおよび酸素イオンが十分
に発生した状態で有機シラン材料ガスを導入し成膜する
ため、成膜初期に形成される絶縁膜中のＯＨ基、Ｃ等の
不純物が減少する。
【００１３】また、有機シラン材料ガスを間欠的に供給
することにより、まず最初に有機シラン材料ガスが成膜
チャンバー内に供給されると、この有機シラン材料ガス
がプラズマ放電により分解され、絶縁膜が成膜される。
その後、有機シラン材料ガスの供給が停止されると、酸
化性ガスのみのプラズマ放電により発生した酸素ラジカ
ル、酸素イオン等によって、先に成膜された絶縁膜中の
ＯＨ基、Ｃ等の不純物の除去が効率良く行われる。
することにより、まず最初に有機シラン材料ガスが成膜
チャンバー内に供給されると、この有機シラン材料ガス
がプラズマ放電により分解され、絶縁膜が成膜される。
その後、有機シラン材料ガスの供給が停止されると、酸
化性ガスのみのプラズマ放電により発生した酸素ラジカ
ル、酸素イオン等によって、先に成膜された絶縁膜中の
ＯＨ基、Ｃ等の不純物の除去が効率良く行われる。
【００１４】また、プラズマ放電終了時には有機シラン
材料ガスは先に供給が止められているため、酸化性ガス
のプラズマにより残留した有機シラン材料ガス等は十分
に分解、酸化され、Ｈ2 Ｏ，ＣＯ，ＣＯ2 等の気体分子
として排気することができるため、プラズマ放電を終了
しても、形成した絶縁膜上に酸化不十分な中間反応生成
物が堆積することはなくなり、絶縁膜表面の不純物が減
少する。従って、この発明の絶縁膜の形成方法によって
絶縁膜を形成すると、絶縁膜における、半導体との界面
部分および表面部分の不純物のみならず、内部の不純物
も効率良く除去でき、このために絶縁膜の膜質、特に電
気特性が向上する。
材料ガスは先に供給が止められているため、酸化性ガス
のプラズマにより残留した有機シラン材料ガス等は十分
に分解、酸化され、Ｈ2 Ｏ，ＣＯ，ＣＯ2 等の気体分子
として排気することができるため、プラズマ放電を終了
しても、形成した絶縁膜上に酸化不十分な中間反応生成
物が堆積することはなくなり、絶縁膜表面の不純物が減
少する。従って、この発明の絶縁膜の形成方法によって
絶縁膜を形成すると、絶縁膜における、半導体との界面
部分および表面部分の不純物のみならず、内部の不純物
も効率良く除去でき、このために絶縁膜の膜質、特に電
気特性が向上する。
【００１５】
【実施例】以下この発明を実施例を用いて説明するが、
この発明を限定するものではない。 （実施例１）まず、図３に示したものと同様のプラズマ
ＣＶＤ装置を用意した。そして、成膜チャンバー１４内
のカソード電極１５の下方にあり、平行平板電極のアノ
ードを構成する試料台１６上に基板１７をセットし、成
膜チャンバー１４内部の空気を真空排気口１８から排気
し高真空とした。試料台１６内部にはヒーターが内蔵さ
れており、基板１７がプロセス中３１５℃に保たれるよ
うに制御した。
この発明を限定するものではない。 （実施例１）まず、図３に示したものと同様のプラズマ
ＣＶＤ装置を用意した。そして、成膜チャンバー１４内
のカソード電極１５の下方にあり、平行平板電極のアノ
ードを構成する試料台１６上に基板１７をセットし、成
膜チャンバー１４内部の空気を真空排気口１８から排気
し高真空とした。試料台１６内部にはヒーターが内蔵さ
れており、基板１７がプロセス中３１５℃に保たれるよ
うに制御した。
【００１６】そして、図１に示す本発明による絶縁膜の
形成方法の第一の例を説明するためのタイムチャートに
従ってガス導入、高周波電力の印加を制御した。まず、
時刻１において酸化性ガスの開閉バルブ２０を開にし
て、酸化性ガス導入口１０からマスフローコントローラ
ー１２を通して、成膜チャンバー１４内に酸化性ガスと
して酸素を導入した。酸素の流量はマスフローコントロ
ーラー１２により１００ｓｃｃｍ（スタンダードｃｃ／
ｍｉｎ）に制御した。成膜チャンバー１４内の圧力は真
空排気口１８に接続されたコンダクタンスバルブ２２を
可変することにより１．０Ｔｏｒｒに制御した。
形成方法の第一の例を説明するためのタイムチャートに
従ってガス導入、高周波電力の印加を制御した。まず、
時刻１において酸化性ガスの開閉バルブ２０を開にし
て、酸化性ガス導入口１０からマスフローコントローラ
ー１２を通して、成膜チャンバー１４内に酸化性ガスと
して酸素を導入した。酸素の流量はマスフローコントロ
ーラー１２により１００ｓｃｃｍ（スタンダードｃｃ／
ｍｉｎ）に制御した。成膜チャンバー１４内の圧力は真
空排気口１８に接続されたコンダクタンスバルブ２２を
可変することにより１．０Ｔｏｒｒに制御した。
【００１７】ついで、圧力安定化のために時間ｔ0 とし
て１分経過後、時刻２において高周波電源１９より１
３．５６ＭＨｚの高周波電力２５０Ｗを印加した。酸化
性ガスのみ供給によりプラズマ放電を続け、時間ｔ1 と
して１０分経過後、時刻３において有機シラン材料ガス
の開閉バルブ２１を開にし、マスフローコントローラー
１３を通して、成膜チャンバー１４内にＴＥＯＳを導入
した。ＴＥＯＳの流量はマスフローコントローラー１３
により８ｓｃｃｍに制御した。このとき気化器１１内の
ＴＥＯＳを７０℃、気化器１１から成膜チャンバー１４
までの配管を９５℃に加熱した。
て１分経過後、時刻２において高周波電源１９より１
３．５６ＭＨｚの高周波電力２５０Ｗを印加した。酸化
性ガスのみ供給によりプラズマ放電を続け、時間ｔ1 と
して１０分経過後、時刻３において有機シラン材料ガス
の開閉バルブ２１を開にし、マスフローコントローラー
１３を通して、成膜チャンバー１４内にＴＥＯＳを導入
した。ＴＥＯＳの流量はマスフローコントローラー１３
により８ｓｃｃｍに制御した。このとき気化器１１内の
ＴＥＯＳを７０℃、気化器１１から成膜チャンバー１４
までの配管を９５℃に加熱した。
【００１８】ついで、ＳｉＯ2 の成膜が開始され、所定
の膜厚１０００Å成膜後、時刻４において開閉バルブ２
１を閉じ、ＴＥＯＳの供給を止めた。この後、時間ｔ2
として１０分間、酸化性ガスのみを成膜チャンバー１４
内に供給し、プラズマ放電を継続した。時刻５において
高周波電力を止め、開閉バルブ２０を閉じた。そして、
成膜チャンバー１４内を高真空に排気し、その後大気圧
にし成膜チャンバー１４を開けて絶縁膜が形成された基
板１７を取り出した。
の膜厚１０００Å成膜後、時刻４において開閉バルブ２
１を閉じ、ＴＥＯＳの供給を止めた。この後、時間ｔ2
として１０分間、酸化性ガスのみを成膜チャンバー１４
内に供給し、プラズマ放電を継続した。時刻５において
高周波電力を止め、開閉バルブ２０を閉じた。そして、
成膜チャンバー１４内を高真空に排気し、その後大気圧
にし成膜チャンバー１４を開けて絶縁膜が形成された基
板１７を取り出した。
【００１９】（実施例２）図３に示したものと同様のプ
ラズマＣＶＤ装置を用意し、時刻３から時刻４間につい
ては図２に示す本発明による絶縁膜の形成方法の第二の
例を説明するためのタイムチャートに従って以下に述べ
るようにしてガス導入、高周波電力の印加を制御した以
外は実施例１と同様にして基板１７に絶縁膜を形成し
た。時刻３において、プラズマ放電、酸化性ガスの供給
を中断することなく、有機シラン材料ガスの開閉バルブ
２１を開にし、マスフローコントローラー１３を通し
て、成膜チャンバー１４内にＴＥＯＳを導入した。ＴＥ
ＯＳの流量はマスフローコントローラー１３により８ｓ
ｃｃｍに制御した。このとき気化器１１内のＴＥＯＳを
７０℃、気化器１１から成膜チャンバー１４までの配管
を９５℃に加熱した。ついで、ＳｉＯ2 の成膜が開始さ
れ、時間ｔAとして２分経過後、有機シラン材料ガスの
開閉バルブ２１を閉にし、酸化性ガスのみを成膜チャン
バー１４内に供給し、プラズマ放電を継続した。酸化性
ガスのみによるプラズマ放電を時間ｔBとして２分経過
後、有機シラン材料ガスの開閉バルブ２１を開にし、成
膜チャンバー１４内に有機シラン材料ガスを供給し、絶
縁膜の成膜を行った。このような有機シラン材料ガスの
開閉バルブ２１の開閉動作をそれぞれ時間ｔA、ｔBによ
り４回繰り返した。所定の膜厚１０００Å成膜後、時刻
４において開閉バルブ２１を閉じ、ＴＥＯＳの供給を止
めた。
ラズマＣＶＤ装置を用意し、時刻３から時刻４間につい
ては図２に示す本発明による絶縁膜の形成方法の第二の
例を説明するためのタイムチャートに従って以下に述べ
るようにしてガス導入、高周波電力の印加を制御した以
外は実施例１と同様にして基板１７に絶縁膜を形成し
た。時刻３において、プラズマ放電、酸化性ガスの供給
を中断することなく、有機シラン材料ガスの開閉バルブ
２１を開にし、マスフローコントローラー１３を通し
て、成膜チャンバー１４内にＴＥＯＳを導入した。ＴＥ
ＯＳの流量はマスフローコントローラー１３により８ｓ
ｃｃｍに制御した。このとき気化器１１内のＴＥＯＳを
７０℃、気化器１１から成膜チャンバー１４までの配管
を９５℃に加熱した。ついで、ＳｉＯ2 の成膜が開始さ
れ、時間ｔAとして２分経過後、有機シラン材料ガスの
開閉バルブ２１を閉にし、酸化性ガスのみを成膜チャン
バー１４内に供給し、プラズマ放電を継続した。酸化性
ガスのみによるプラズマ放電を時間ｔBとして２分経過
後、有機シラン材料ガスの開閉バルブ２１を開にし、成
膜チャンバー１４内に有機シラン材料ガスを供給し、絶
縁膜の成膜を行った。このような有機シラン材料ガスの
開閉バルブ２１の開閉動作をそれぞれ時間ｔA、ｔBによ
り４回繰り返した。所定の膜厚１０００Å成膜後、時刻
４において開閉バルブ２１を閉じ、ＴＥＯＳの供給を止
めた。
【００２０】（試験例）本発明の絶縁膜の形成方法の第
一および第二の例と従来の絶縁膜の形成方法により成膜
パラメータ（ガス流量，圧力，高周波電力，基板温度
等）は同一にしてそれぞれ図１、図２および図４のタイ
ムチャートに基づいて、Ｓｉウェハー上に１０００Åの
ＳｉＯ2 膜を成膜しその上に面積０．０５ｃｍ2のＡｌ
電極をもつＭＯＳキャパシタを作成して特性の比較を行
った。その結果を表１に示す。
一および第二の例と従来の絶縁膜の形成方法により成膜
パラメータ（ガス流量，圧力，高周波電力，基板温度
等）は同一にしてそれぞれ図１、図２および図４のタイ
ムチャートに基づいて、Ｓｉウェハー上に１０００Åの
ＳｉＯ2 膜を成膜しその上に面積０．０５ｃｍ2のＡｌ
電極をもつＭＯＳキャパシタを作成して特性の比較を行
った。その結果を表１に示す。
【００２１】
【表１】
【００２２】表１中、リーク電流は２ＭＶｃｍ-1の電界
を加えて測定されたものである。上記表１に示した結果
から明らかなように、本発明の絶縁膜の形成方法の第一
の例および第二の例によって形成した絶縁膜は従来の形
成方法によるものより絶縁耐圧が高く、界面準位密度、
リーク電流が小さく、非常に良好な電気特性を有してい
ることが確認された。これは薄膜トランジスタ、ＭＩＳ
トランジスタなどのゲート絶縁膜として十分な特性をも
つものである。
を加えて測定されたものである。上記表１に示した結果
から明らかなように、本発明の絶縁膜の形成方法の第一
の例および第二の例によって形成した絶縁膜は従来の形
成方法によるものより絶縁耐圧が高く、界面準位密度、
リーク電流が小さく、非常に良好な電気特性を有してい
ることが確認された。これは薄膜トランジスタ、ＭＩＳ
トランジスタなどのゲート絶縁膜として十分な特性をも
つものである。
【００２３】
【発明の効果】以上詳細に説明したように、この発明の
絶縁膜の形成方法は、有機シラン材料ガスと酸化性ガス
を成膜チャンバーに供給し、プラズマＣＶＤ法によって
絶縁膜を形成する場合に、絶縁膜の膜質、特に電気特性
を大幅に向上させることができる。従って、低温で良質
のゲート絶縁膜が形成でき、とりわけ低融点の基板を用
いた薄膜トランジスタのゲート絶縁膜の形成には特に有
効である。
絶縁膜の形成方法は、有機シラン材料ガスと酸化性ガス
を成膜チャンバーに供給し、プラズマＣＶＤ法によって
絶縁膜を形成する場合に、絶縁膜の膜質、特に電気特性
を大幅に向上させることができる。従って、低温で良質
のゲート絶縁膜が形成でき、とりわけ低融点の基板を用
いた薄膜トランジスタのゲート絶縁膜の形成には特に有
効である。
【図１】本発明の絶縁膜の形成方法の第一の例を説明す
るためのタイムチャートである。
るためのタイムチャートである。
【図２】本発明の絶縁膜の形成方法の第二の例を説明す
るためのタイムチャートである。
るためのタイムチャートである。
【図３】絶縁膜の形成方法に用いられるプラズマＣＶＤ
装置の模式図である。
装置の模式図である。
【図４】従来の絶縁膜の形成方法を説明するためのタイ
ムチャートである。
ムチャートである。
１０ ガス導入口 １１ 気化器 １２ マスフローコントローラー １３ マスフローコントローラー １４ 成膜チャンバー １５ カソード電極 １６ 試料台 １７ 基板 １８ 真空排気口 １９ 高周波電源 ２０ 開閉バルブ ２１ 開閉バルブ ２２ コンダクタンスバルブ
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 29/784
Claims (7)
- 【請求項１】 有機シラン材料ガスと酸化性ガスを成膜
チャンバーに供給し、プラズマＣＶＤ法によって絶縁膜
を形成する方法において、成膜チャンバー内に酸化性ガ
スを先に導入し、プラズマ放電を起こし、所定の時間ｔ
1 経過後、放電を中断させることなく、有機シラン材料
ガスを導入して、絶縁膜を形成後、放電を中断すること
なく有機シラン材料ガスの供給を止め、この後、酸化性
ガスのプラズマ放電を所定の時間ｔ2 続けることを特徴
とする絶縁膜の形成方法。 - 【請求項２】 有機シラン材料ガスと酸化性ガスを成膜
チャンバーに供給し、プラズマＣＶＤ法によって絶縁膜
を形成する方法において、成膜チャンバー内に酸化性ガ
スを先に導入し、プラズマ放電を起こし、成膜中はプラ
ズマ放電、酸化性ガスの供給は中断することなく、有機
シラン材料ガスの供給を間欠的に行うことを特徴とする
絶縁膜の形成方法。 - 【請求項３】 酸化性ガスの放電時間ｔ1 およびｔ2 を
それぞれ０．５〜２０分とすることを特徴とする請求項
１記載の絶縁膜の形成方法。 - 【請求項４】 有機シラン材料ガスの供給の断続を成膜
中に２回以上行うことを特徴とする請求項２記載の絶縁
膜の形成方法。 - 【請求項５】 有機シラン材料ガスがテトラエチルオル
ソシリケイトであることを特徴とする請求項１〜４のい
ずれか一つに記載の絶縁膜の形成方法。 - 【請求項６】 有機シラン材料ガスが、トリエトキシシ
ラン、ジエチルシラン、テトラメチルシクロテトラシロ
キサンのうちから選択される一種であることを特徴とす
る請求項１〜４のいずれか一つに記載の絶縁膜の形成方
法。 - 【請求項７】 酸化性ガスが、酸素であることを特徴と
する請求項１〜６のいずれか一つに記載の絶縁膜の形成
方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4334723A JP2506539B2 (ja) | 1992-02-27 | 1992-12-15 | 絶縁膜の形成方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4175992 | 1992-02-27 | ||
| JP4-41759 | 1992-02-27 | ||
| JP4334723A JP2506539B2 (ja) | 1992-02-27 | 1992-12-15 | 絶縁膜の形成方法 |
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| JP2506539B2 JP2506539B2 (ja) | 1996-06-12 |
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