JPH0673563A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPH0673563A JPH0673563A JP22877192A JP22877192A JPH0673563A JP H0673563 A JPH0673563 A JP H0673563A JP 22877192 A JP22877192 A JP 22877192A JP 22877192 A JP22877192 A JP 22877192A JP H0673563 A JPH0673563 A JP H0673563A
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- Prior art keywords
- etching
- hydrogen chloride
- aqueous solution
- solution
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、エッチング方法に関
し、更に詳しくは塩化第二鉄水溶液を使用する銅、鉄、
ニッケルなどの金属及びこれらの合金の連続的エッチン
グ方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching method, and more particularly to copper, iron, and iron using an aqueous solution of ferric chloride.
It relates to a method for continuous etching of metals such as nickel and their alloys.
【0002】[0002]
【従来の技術】塩化第二鉄水溶液による銅のエッチング
は、エッチングが進行するに従って次式の反応によりエ
ッチング液中の銅イオン及び第一鉄イオンが増大し、そ
れに伴ってエッチング速度が低下する。 Fe++++Cu0→Fe+++Cu+ Fe++++Cu+→Fe+++Cu++ 2. Description of the Related Art In the etching of copper with an aqueous solution of ferric chloride, copper ions and ferrous ions in the etching solution increase due to the reaction of the following equation as the etching progresses, and the etching rate decreases accordingly. Fe +++ + Cu 0 → Fe ++ + Cu + Fe +++ + Cu + → Fe ++ + Cu ++
【0003】この問題を解決するため従来の塩化第二鉄
水溶液による銅の連続的エッチングにおいては、エッチ
ングの有効距離を長くし、実用的なライン速度を確保す
る方法が採られていた。しかしながら、この方法におい
ては設備費が高くなること、薬液を多量に必要とするこ
となどの欠点があった。また、これらの欠点は銅以外の
金属のエッチングについても同様である。In order to solve this problem, in the conventional continuous etching of copper with an aqueous solution of ferric chloride, a method has been adopted in which the effective etching distance is lengthened to secure a practical line speed. However, this method has drawbacks such as high equipment cost and a large amount of chemical solution. Further, these drawbacks are the same as in the etching of metals other than copper.
【0004】[0004]
【発明が解決しようとする課題】このような欠点を解決
する方法として、塩素酸塩と塩化水素をエッチング液に
供給し、エッチングにより生成した塩化第一鉄を塩化第
二鉄に戻し、エッチング液の性能を回復する方法が特開
昭64−87788号公報、特開平2−14968号公報に示されて
いるが、近年の電子部品の微細化、高密化に対応するに
は不充分なエッチング方法である。As a method for solving such a drawback, a chlorate and hydrogen chloride are supplied to an etching solution and ferrous chloride produced by the etching is returned to ferric chloride to remove the etching solution. Japanese Patent Laid-Open No. 64-87788 and Japanese Patent Laid-Open No. 2-14968 disclose a method for recovering the performance of the above-mentioned method. However, the etching method is insufficient to cope with the recent miniaturization and high density of electronic parts. Is.
【0005】上記のエッチング方法は、酸化剤として塩
素酸塩を使用し、この反応で消費される塩化水素を同時
に供給するものであるが、エッチングの際には第一鉄イ
オンの空気酸化も起こり、これによっても塩化水素が消
費され、更に、蒸散によっても塩化水素が失われる。こ
のため、この方法においては予め供給する塩化水素を塩
素酸塩との反応当量より多くすることでこれに対処して
いる。The above-mentioned etching method uses a chlorate as an oxidant and simultaneously supplies hydrogen chloride consumed in this reaction. However, during the etching, air oxidation of ferrous ions also occurs. However, this also consumes hydrogen chloride, and hydrogen chloride is also lost by evaporation. For this reason, in this method, this is dealt with by increasing the amount of hydrogen chloride to be supplied in advance in excess of the reaction equivalent of the chlorate.
【0006】即ち、この方法ではスプレーの空吹き、あ
るいはエッチング面積の少ない素材をエッチングすると
塩化水素濃度が下がり、エッチング量の大きい素材をエ
ッチングすると塩化水素濃度が上がる現象がみられ、エ
ッチング性能のバラツキ要因となる。That is, in this method, the concentration of hydrogen chloride decreases when a material having a small etching area is sprayed or the material has a large etching amount, and the concentration of hydrogen chloride increases when a material having a large etching amount is etched, which causes variations in etching performance. It becomes a factor.
【0007】また、プリント配線板回路の微細化、リー
ドフレームの多ピン化などに対処するためには、エッチ
ングレジストを傷め、かつエッチング表面を粗くする塩
化水素の濃度をより低く抑えることが必要であるが、こ
れまでの方法では空気酸化などで塩化水素が消費される
と金属の水酸化物が生成し、エッチング性能を極度に落
とすため実施が困難であった。Further, in order to cope with the miniaturization of the printed wiring board circuit and the increase in the number of lead frames, it is necessary to suppress the concentration of hydrogen chloride which damages the etching resist and roughens the etching surface. However, the conventional methods are difficult to perform because hydrogen hydroxide is consumed by air oxidation or the like to form metal hydroxides, which drastically reduces etching performance.
【0008】従って、本発明の目的は、常に最良の条件
で連続的にエッチング処理を行うことができる方法を提
供することにある。Therefore, it is an object of the present invention to provide a method capable of continuously performing etching under the best conditions.
【0009】[0009]
【課題を解決するための手段】本発明は、金属のエッチ
ングにより生成した塩化第一鉄の量を酸化還元電位を測
定することにより検知し、この結果に基づき塩素酸塩水
溶液、塩化水素水溶液、塩化第二鉄を供給し、更に塩化
水素濃度を検知し、塩化水素を含む水溶液を供給する連
続的エッチング方法であり、本発明によればこれまでの
エッチングに関する不具合を一挙に解決することができ
る。The present invention detects the amount of ferrous chloride produced by etching a metal by measuring the redox potential, and based on this result, an aqueous chlorate solution, an aqueous hydrogen chloride solution, It is a continuous etching method of supplying ferric chloride, further detecting the hydrogen chloride concentration, and supplying an aqueous solution containing hydrogen chloride. According to the present invention, it is possible to solve all the problems related to the etching so far. .
【0010】即ち、本発明に係るエッチング方法は、塩
化第二鉄水溶液による金属の連続的エッチング方法にお
いて、塩素酸ナトリウム、塩素酸カリウム及び塩素酸カ
ルシウムからなる群から選択される塩素酸塩1モルに対
し、塩化水素5〜6.5モル並びに塩化第二鉄2.5〜3
0モルの割合で塩素酸塩水溶液、塩化水素水溶液及び塩
化第二鉄水溶液をエッチング液に供給するにあたり、エ
ッチング液の酸化還元電位を検知し、この検知結果に基
づき上記溶液を別個にまたは塩化水素水溶液と塩化第二
鉄との混合溶液と塩素酸塩水溶液とをエッチング液へ供
給して予め設定された酸化還元電位を連続的に維持し、
かつエッチング液の塩化水素濃度を検知し、この検知結
果に基づき塩化水素水溶液または塩化水素水溶液と塩化
第二鉄水溶液を別個にまたは混合溶液としてエッチング
液へ供給して予め設定された塩化水素濃度を連続的に維
持することを特徴とする。That is, the etching method according to the present invention is a continuous metal etching method using a ferric chloride aqueous solution, wherein 1 mol of a chlorate selected from the group consisting of sodium chlorate, potassium chlorate and calcium chlorate is used. To hydrogen chloride 5 to 6.5 mol and ferric chloride 2.5 to 3
When the chlorate aqueous solution, the hydrogen chloride aqueous solution and the ferric chloride aqueous solution are supplied to the etching solution at a ratio of 0 mol, the oxidation-reduction potential of the etching solution is detected, and the above solutions are separately used or hydrogen chloride based on the detection result. A mixed solution of an aqueous solution and ferric chloride and an aqueous chlorate solution are supplied to the etching solution to continuously maintain a preset redox potential,
In addition, the hydrogen chloride concentration of the etching solution is detected, and based on this detection result, the hydrogen chloride aqueous solution or the hydrogen chloride aqueous solution and the ferric chloride aqueous solution are supplied to the etching solution separately or as a mixed solution to obtain the preset hydrogen chloride concentration. It is characterized by being maintained continuously.
【0011】本発明に係るエッチング方法においては、
エッチング装置の運転状況により変化する第一鉄の空気
酸化及び蒸散により失われる塩化水素の補給を塩化水素
濃度を検知することで適宜行うことができるため、酸化
還元電位を検知して行われる塩素酸塩と塩化水素の供給
割合を反応当量あるいはこれと近似とすることができ
る。In the etching method according to the present invention,
Chloric acid, which is detected by detecting the oxidation-reduction potential, can be appropriately supplied by the air oxidation of ferrous iron that changes depending on the operating conditions of the etching apparatus and the replenishment of hydrogen chloride lost due to evaporation. The supply ratio of salt and hydrogen chloride can be set to the reaction equivalent or a value close thereto.
【0012】この結果、エッチング液中の塩化水素含量
を極めて低く抑えることができ、エッチングレジストを
傷めることがなく、アンダーエッチ量は最低となり、エ
ッチングされた金属表面は平滑となるなど、より高度な
エッチング加工が可能となる。As a result, the hydrogen chloride content in the etching solution can be suppressed to an extremely low level, the etching resist is not damaged, the amount of underetching is minimized, and the etched metal surface is smoothed. Etching becomes possible.
【0013】本発明における酸化還元電位の検知は通常
のORP電極を使用して行えば良い。塩化水素濃度の検
知はpH電極で行えば良く、自動滴定装置などその他の
手段を選択しても良い。The detection of the redox potential in the present invention may be carried out using a normal ORP electrode. The detection of the hydrogen chloride concentration may be performed with a pH electrode, and other means such as an automatic titrator may be selected.
【0014】酸化還元電位の検知結果で供給する塩素酸
塩と塩化水素の供給比率は塩素酸塩1モル当たり、塩化
水素は5〜6.5モルとするのが良いが、更に好ましく
は反応当量である6モルとするのが良い。塩化水素検知
で供給する塩化水素を含有する水溶液の供給は適宜行わ
れるが、制御設定値を選択することで、エッチング液中
の塩化水素濃度を0〜3%とするのが良い。The supply ratio of the chlorate and hydrogen chloride supplied based on the detection result of the redox potential is preferably 5 to 6.5 mol of hydrogen chloride per mol of chlorate, more preferably the reaction equivalent. It is better to use 6 mol. Although the aqueous solution containing hydrogen chloride to be supplied for hydrogen chloride detection is appropriately supplied, it is preferable to set the hydrogen chloride concentration in the etching solution to 0 to 3% by selecting the control set value.
【0015】エッチング液中の塩化水素濃度は低い方が
より精度の高いエッチングが可能となるが、エッチング
速度が低下する。使用するレジスト、対象となる金属、
細密度により適宜決めれば良い。The lower the concentration of hydrogen chloride in the etching solution, the more accurate the etching becomes possible, but the etching rate decreases. Resist used, target metal,
It may be appropriately determined depending on the fine density.
【0016】通常、レジストとしてドライフィルムを使
用し、プリント配線板銅箔のエッチングを行う場合は、
エッチング液中の塩化水素濃度を1%前後とし、ニッケ
ル合金、ニッケル、クロム合金を対象とした場合は0.
2%以下とすると好結果が得られる。Usually, when a dry film is used as a resist and a copper foil of a printed wiring board is etched,
When the concentration of hydrogen chloride in the etching solution is around 1% and nickel alloys, nickel and chromium alloys are the target,
Good results are obtained when the content is 2% or less.
【0017】塩化第二鉄の供給は、エッチングの進行に
より増加するエッチング液中の銅、ニッケルなどの金属
濃度を一定に調整するために行われるものであり、対象
金属、要求されるエッチング性能により適宜供給量を変
えれば良く、例えば鉄または鉄の含量の高い鉄系合金の
場合は少なくし、Cr含量が上がるとエッチング性能が
低下するステンレス材が対象の場合は多く供給すると良
い。実用上は塩素酸塩1モルに対し、2.5〜30モル
とするのが好ましい。The supply of ferric chloride is carried out in order to adjust the concentration of metals such as copper and nickel in the etching solution, which increases with the progress of etching, to a constant level, and depending on the target metal and the required etching performance. The supply amount may be appropriately changed. For example, iron or an iron-based alloy having a high iron content may be reduced, and if the Cr content is high, the etching performance may be deteriorated. Practically, it is preferably 2.5 to 30 mol per mol of chlorate.
【0018】これらのファクターを勘案してエッチング
液中の酸化還元電位及び塩化水素濃度を予め設定し、エ
ッチング液中の酸化還元電位の変化に対応して塩素酸塩
水溶液、塩化水素水溶液、塩化第二鉄水溶液を別個にま
たは塩化水素水溶液と塩化第二鉄水溶液の混合溶液と塩
素酸塩水溶液をエッチング液に添加すれば良く、また、
塩化水素濃度の変化に対応して塩化水素水溶液または塩
化水素水溶液と塩化第二鉄水溶液を別個にまたは混合溶
液としてエッチング液に添加すれば良い。Taking these factors into consideration, the redox potential and the hydrogen chloride concentration in the etching solution are set in advance, and the chlorate aqueous solution, the hydrogen chloride aqueous solution and the chloride chloride solution are set in accordance with the changes in the redox potential in the etching solution. The ferric iron solution may be added separately or a mixed solution of a hydrogen chloride aqueous solution and a ferric chloride aqueous solution and a chlorate aqueous solution may be added to the etching solution.
The hydrogen chloride aqueous solution or the hydrogen chloride aqueous solution and the ferric chloride aqueous solution may be added to the etching solution separately or as a mixed solution according to the change in the hydrogen chloride concentration.
【0019】本発明で使用する塩素酸塩は例えば塩素酸
ナトリウム、塩素酸カリウム、塩素酸カルシウム等から
選択され、水溶液の形態で供給されるが、その濃度は例
えば塩素酸ナトリウムの場合35〜40%とするのが良
い。The chlorate used in the present invention is selected from, for example, sodium chlorate, potassium chlorate, calcium chlorate, etc., and is supplied in the form of an aqueous solution, and the concentration thereof is 35-40 in the case of sodium chlorate. It is good to set it as%.
【0020】塩化水素は30〜35%水溶液として供給
し、塩化第二鉄は40〜50°Beの水溶液として供給
するのが好ましい。Hydrogen chloride is preferably supplied as an aqueous solution of 30 to 35%, and ferric chloride is preferably supplied as an aqueous solution of 40 to 50 ° Be.
【0021】なお、予め塩化水素と塩化第二鉄の水溶液
を前記の割合で混合して供給することは、設備の保全、
取り扱い上の安全性からみて好ましい。It should be noted that it is necessary to mix the aqueous solutions of hydrogen chloride and ferric chloride in advance in the above-mentioned proportions before supplying the equipment,
It is preferable from the viewpoint of safety in handling.
【0022】また、塩化水素濃度検知に対応する塩化水
素水溶液の供給は、金属溶解量を一定に保つために、前
記した割合で塩化第二鉄水溶液と同時に供給するのが良
く、塩化水素と塩化第二鉄との混合物水溶液として供給
するのがより好ましい。The supply of the aqueous solution of hydrogen chloride corresponding to the detection of the concentration of hydrogen chloride is preferably carried out simultaneously with the aqueous solution of ferric chloride in order to keep the amount of dissolved metal constant. More preferably, it is supplied as an aqueous solution of a mixture with ferric iron.
【0023】更に、特開平2−149684号公報に記載され
ているアンモニウム塩、アミン、アミン塩、例えば塩化
アンモニウム、臭化アンモニウム、エチレンジアミン、
モノエタノールアミンをエッチング液に添加することも
できる。これらの使用量はエッチング液全量に対し、窒
素換算量で0.02〜3重量%になるように供給する
が、好ましくは0.05〜2重量%が良い。Further, ammonium salts, amines, amine salts such as ammonium chloride, ammonium bromide, ethylenediamine, which are described in JP-A-2-149684,
Monoethanolamine can also be added to the etching solution. The amount of these used is such that the amount in terms of nitrogen is 0.02 to 3% by weight with respect to the total amount of the etching solution, and preferably 0.05 to 2% by weight.
【0024】また、エッチング性能を維持するため、比
重計を設置し、この検知結果により、水を供給してエッ
チング液の比重を一定に保つことが好ましい。なお、エ
ッチング液の比重は1.1〜1.6、好ましくは1.3〜
1.5に維持するのが良い。Further, in order to maintain the etching performance, it is preferable to install a specific gravity meter and supply water to keep the specific gravity of the etching solution constant based on the detection result. The specific gravity of the etching solution is 1.1 to 1.6, preferably 1.3 to
Better keep it at 1.5.
【0025】また、エッチング温度は通常行われている
ように30〜70℃とするのが良く、硬質塩化ビニル製
のエッチング槽を使用した場合は30〜50℃が良い。Further, the etching temperature is preferably 30 to 70 ° C. as is usually done, and is preferably 30 to 50 ° C. when an etching tank made of hard vinyl chloride is used.
【0026】本発明のエッチング方法は、浸漬法、スプ
レー法のいずれでも実施できるが、スプレー法の場合、
圧力は0.5〜5.0kg/cm2とすると良い。The etching method of the present invention can be carried out by either a dipping method or a spray method. In the case of the spray method,
The pressure is preferably 0.5 to 5.0 kg / cm 2 .
【0027】次に、本発明のエッチング方法を実施する
に適した装置の1実施態様を図1に従って説明する。図
1中、エッチング槽(1)のエッチング液をエッチング液
送り配管(11)を通し、エッチング液送りポンプ(6)によ
り酸化還元電位、塩化水素濃度、比重検出部に送液す
る。更に、オーバーフローしたエッチング液をエッチン
グ液戻り配管によりエッチング槽(1)に戻すことにより
エッチング液を循環させる。このエッチング液循環は常
時行う。Next, one embodiment of an apparatus suitable for carrying out the etching method of the present invention will be described with reference to FIG. In FIG. 1, the etching solution in the etching tank (1) is passed through the etching solution feed pipe (11), and is fed to the redox potential, hydrogen chloride concentration and specific gravity detection section by the etching solution feed pump (6). Further, the overflowed etching solution is returned to the etching tank (1) through the etching solution return pipe to circulate the etching solution. This etching solution circulation is always performed.
【0028】酸化還元電位の測定結果が設定値以下とな
ったら、酸化還元電位に拘わる制御信号配線(A)を使用
し、塩化第二鉄水溶液送りポンプ(7)を稼働させ、塩化
第二鉄水溶液貯槽(3)から塩化第二鉄水溶液を塩化第二
鉄水溶液供給配管(14)を通してエッチング槽(1)に供給
する。同様に、塩化水素水溶液送りポンプ(8)を稼働さ
せ、塩化水素水溶液を塩化水素水溶液貯槽(4)から塩化
水素水溶液供給配管(15)を通しエッチング槽(1)へ供給
する。同様に、塩素酸塩水溶液送りポンプ(9)を稼働さ
せ塩素酸塩水溶液を塩素酸塩水溶液貯槽(5)から塩素酸
塩水溶液供給配管(16)を通しエッチング槽(1)へ供給す
る。酸化還元電位の測定値が設定値以上となったら、酸
化還元電位に拘わる制御信号配線(A)を使用し、各ポン
プを停止させ、各水溶液の供給を中止する。When the measurement result of the oxidation-reduction potential becomes less than the set value, the control signal wiring (A) relating to the oxidation-reduction potential is used, the ferric chloride aqueous solution feed pump (7) is operated, and the ferric chloride is fed. The ferric chloride aqueous solution is supplied from the aqueous solution storage tank (3) to the etching tank (1) through the ferric chloride aqueous solution supply pipe (14). Similarly, the hydrogen chloride aqueous solution feed pump (8) is operated to supply the hydrogen chloride aqueous solution from the hydrogen chloride aqueous solution storage tank (4) to the etching tank (1) through the hydrogen chloride aqueous solution supply pipe (15). Similarly, the chlorate solution feed pump (9) is operated to supply the chlorate solution from the chlorate solution storage tank (5) to the etching tank (1) through the chlorate solution supply pipe (16). When the measured value of the oxidation-reduction potential exceeds the set value, the control signal wiring (A) relating to the oxidation-reduction potential is used to stop each pump and stop the supply of each aqueous solution.
【0029】塩化水素濃度の測定結果が設定値以下とな
ったら、塩化水素濃度に拘わる制御信号配線(B)を使用
し、塩化第二鉄水溶液送りポンプ(7)を稼働させ、塩化
第二鉄水溶液貯槽(3)から塩化第二鉄水溶液を塩化第二
鉄供給配管(14)を通してエッチング槽(1)に供給する。
同様に、塩化水素水溶液送りポンプ(8)を稼働させ、塩
化水素水溶液を塩化水素水溶液貯槽(4)から塩化水素水
溶液供給配管(15)を通しエッチング槽(1)へ供給する。
塩化水素濃度の測定値が設定値以上となったら、塩化水
素濃度に拘わる信号制御配線(B)を使用し、各ポンプを
停止させ、各水溶液の供給を中止する。When the measurement result of the hydrogen chloride concentration becomes less than the set value, the control signal wiring (B) relating to the hydrogen chloride concentration is used, the ferric chloride aqueous solution feed pump (7) is operated, and the ferric chloride is The ferric chloride aqueous solution is supplied from the aqueous solution storage tank (3) to the etching tank (1) through the ferric chloride supply pipe (14).
Similarly, the hydrogen chloride aqueous solution feed pump (8) is operated to supply the hydrogen chloride aqueous solution from the hydrogen chloride aqueous solution storage tank (4) to the etching tank (1) through the hydrogen chloride aqueous solution supply pipe (15).
When the measured hydrogen chloride concentration exceeds the set value, the signal control wiring (B) relating to the hydrogen chloride concentration is used to stop each pump and stop the supply of each aqueous solution.
【0030】比重の測定結果が設定値以上となったら、
比重の拘わる制御信号配線(C)を使用し、水供給配管電
磁弁(10)を開き、水供給配管を通してエッチング槽(1)
へ水を供給する。また、比重の測定結果が設定値以下と
なったら、比重に拘わる制御信号配線(C)を使用し、水
供給配管電磁弁(10)を閉じ、水の供給を中止する。When the measurement result of the specific gravity exceeds the set value,
Using the control signal wiring (C) that is concerned with specific gravity, open the water supply pipe solenoid valve (10), and through the water supply pipe, etch tank (1)
Supply water to. When the measurement result of the specific gravity becomes less than the set value, the control signal wiring (C) relating to the specific gravity is used to close the water supply pipe solenoid valve (10) to stop the water supply.
【0031】なお、各水溶液、水の供給により増加した
エッチング槽(1)のエッチング液はオーバーフローによ
りエッチング槽(1)から排出される構成となっている。The etching solution in the etching tank (1) increased by the supply of each aqueous solution and water is discharged from the etching tank (1) due to overflow.
【0032】[0032]
【実施例】以下に、本発明の実施例及び比較例を記載す
る。なお、以下の例における原料配合量は重量比であ
り、百分率は重量百分率である。 実施例1 スプレー式エッチング槽(エッチングの有効距離4m、
液保有量900リットル)と酸化還元電位、塩化水素濃
度、比重を検出、制御する液管理装置を組み合わせた図
1の設備を使用し、プリント配線板銅箔のエッチングを
行った。制御設定値はそれぞれ以下の値とした。 酸化還元電位:530mV、塩化水素濃度:275mV
(pH電極からの発生電位を電圧計で測定、制御)、比重
1.360。薬剤としては40°Beの塩化第二鉄水溶
液100部と塩化アンモニウム3部の混合溶液(これを
A液とする)、35%塩酸水溶液(これをB液とする)、
38%塩素酸ナトリウム水溶液100部とジエチレント
リアミン0.1部の混合溶液(これをC液とする)を使用
し、エッチング液の酸化還元電位の検出結果に従いA
液、B液、C液を塩化第二鉄:塩化水素:塩素酸ナトリ
ウムのモル比が4.7:6.0:1になるように供給し、
塩化水素濃度の検出結果に従いA液、B液を上記と同比
率で供給し、比重の検知結果に従い水を供給した。エッ
チング液温度は45℃、スプレー圧力2.0kg/c
m2、コンベア速度4.2m/分とし、銅箔厚さ45μ
m、銅箔除去率60%の両面板(これをD板とする)、銅
箔厚さ45μm、銅箔除去率18%の両面板(これをE
板とする)を8時間かけそれぞれ50m2、60m2処理
した。この間、それぞれの制御設定値に従い、各薬液、
水が自動供給され、塩化第一鉄濃度は0.42〜0.44
モル/リットル、塩化水素濃度は0.52〜0.55%、
比重は1.358〜1.360に制御され、エッチングに
拘わる不良品は発生しなかった。また、線幅100μ
m、線間100μm回路のエッチファクター(銅箔厚さ
/サイドエッチ)は3.8となった。なお、塩化水素濃度
の検出に基づき供給されるA液、B液の量はD板処理時
に比較しE板処理時の方が多かった。3カ月同条件で運
転を継続したが、スラッジ発生などのトラブルはなく、
エッチング槽の洗浄、液交換を必要としなかった。EXAMPLES Examples and comparative examples of the present invention will be described below. In addition, the raw material compounding amounts in the following examples are weight ratios, and the percentages are weight percentages. Example 1 Spray type etching bath (effective etching distance of 4 m,
The printed wiring board copper foil was etched using the equipment of FIG. 1 in which a liquid management amount of 900 liters) was combined with a liquid management device for detecting and controlling the oxidation-reduction potential, hydrogen chloride concentration, and specific gravity. The control set values were as follows. Redox potential: 530 mV, hydrogen chloride concentration: 275 mV
(Measurement and control of potential generated from pH electrode with voltmeter), specific gravity 1.360. As the medicine, a mixed solution of 100 parts of ferric chloride aqueous solution of 40 ° Be and 3 parts of ammonium chloride (this is referred to as solution A), 35% hydrochloric acid aqueous solution (this is referred to as solution B),
A mixed solution of 100 parts of 38% sodium chlorate aqueous solution and 0.1 part of diethylenetriamine (this is referred to as solution C) was used, and according to the detection result of the redox potential of the etching solution, A
Liquid, liquid B, and liquid C are supplied so that the molar ratio of ferric chloride: hydrogen chloride: sodium chlorate is 4.7: 6.0: 1,
Liquids A and B were supplied at the same ratio as above according to the detection result of hydrogen chloride concentration, and water was supplied according to the detection result of specific gravity. Etching solution temperature is 45 ° C, spray pressure is 2.0 kg / c
m 2, conveyor speed 4.2m / min and, copper foil thickness 45μ
m, copper foil removal rate 60% double-sided plate (this is D plate), copper foil thickness 45 μm, copper foil removal rate 18% double-sided plate (this is E
Respectively multiplied by a plate) 8 hours was 50 m 2, 60 m 2 process. During this time, according to each control set value, each chemical solution,
Water is automatically supplied and ferrous chloride concentration is 0.42 to 0.44
Mol / liter, hydrogen chloride concentration 0.52 to 0.55%,
The specific gravity was controlled to 1.358 to 1.360, and no defective products related to etching were generated. Also, the line width is 100μ
m, the etch factor (copper foil thickness / side etch) of a 100 μm circuit between lines was 3.8. The amounts of the A liquid and the B liquid supplied based on the detection of the hydrogen chloride concentration were larger in the E plate treatment than in the D plate treatment. I continued to operate under the same conditions for 3 months, but there was no trouble such as sludge generation,
No etching bath cleaning or liquid exchange was required.
【0033】実施例2 エッチング設備は実施例1と同様なものを使用した。実
施例1のA液とB液を塩化第二鉄:塩化水素のモル比が
5:6になるように混合した(これをF液とする)。F液
とC液の供給比を塩化第二鉄:塩化水素:塩素酸塩のモ
ル比が5:6:1となるようにし、塩化水素濃度の制御
設定値を260mVとし、コンベア速度を5.2m/分
とし、他の条件は実施例1と同じとした。銅箔厚さ35
μmの両面板を10日間かけ5000m2処理した。エ
ッチング液の酸化還元電位が設定値以下になるとF液、
C液が供給され、塩化水素濃度に拘わる電位が設定値以
下になるとF液が供給された。エッチング液組成のう
ち、塩化水素濃度は0.38〜0.40%となり、他は実
施例1と同様となった。また、銅濃度は75〜78g/
リットルであった。スラッジ発生などのトラブルはな
く、エッチング状態はエッチング開始から終了するまで
均一な仕上がりとなった。線幅70μm回路のエッチフ
ァクターは3.7であった。Example 2 The same etching equipment as in Example 1 was used. The liquids A and B of Example 1 were mixed so that the molar ratio of ferric chloride: hydrogen chloride was 5: 6 (this is referred to as liquid F). The supply ratio of the F liquid and the C liquid was set such that the molar ratio of ferric chloride: hydrogen chloride: chlorate was 5: 6: 1, the control set value of the hydrogen chloride concentration was 260 mV, and the conveyor speed was 5. 2 m / min, and other conditions were the same as in Example 1. Copper foil thickness 35
The μm double-sided plate was treated for 5000 m 2 over 10 days. When the redox potential of the etching solution becomes less than the set value, the F solution,
The liquid C was supplied, and the liquid F was supplied when the potential related to the hydrogen chloride concentration fell below the set value. Of the composition of the etching solution, the hydrogen chloride concentration was 0.38 to 0.40%, and the others were the same as in Example 1. Further, the copper concentration is 75 to 78 g /
It was liter. There was no trouble such as sludge generation, and the etching state was a uniform finish from the beginning to the end of etching. The etch factor of the circuit having a line width of 70 μm was 3.7.
【0034】実施例3 実施例1と同様のエッチング設備を使用し、リードフレ
ームほかのエッチングを実施した。制御設定値は以下の
値とした。 酸化還元電位:600mV、塩化水素濃度に拘わる電
位:245mV、比重1.490。薬剤としては48°
Beの塩化第二鉄水溶液、35%塩酸水溶液を塩化第二
鉄:塩化水素のモル比が16:6.2になるようにした
混合溶液(これをG液とする)、38%塩素酸ナトリウム
100部水溶液とトリエチレンテトラミン0.1部の混
合溶液(これをH液とする)を使用し、酸化還元電位の検
出結果に従い、G液、H液を塩化第二鉄:塩化水素:塩
素酸ナトリウムのモル比が16:6.2:1になるよう
に供給し、塩化水素濃度の検出結果に従いG液を供給し
た。エッチング温度50℃、スプレー圧力1.8kg/
cm2とし、42−アロイ材、厚さ0.2mmのリードフ
レーム、SUS−304材のカメラ部品などをエッチン
グ処理した。コンベア速度はエッチング対象物により適
宜変更した。エッチングの速度が遅いSUS材でエッチ
ング面積の小さいものの処理時には塩化水素濃度検知器
が働きG液のみ供給が頻繁に行われた。10日間の運転
期間中のエッチング液の分析結果は、塩化第一鉄濃度は
0.23〜0.25モル/リットル、塩化水素濃度は0.
09〜0.12%、比重は1.488から1.490とな
った。各製品の仕上がり寸法、エッチングの直線性、金
属表面の平滑性はすべて良好でエッチングに拘わる不良
は発生しなかった。Example 3 The same etching equipment as in Example 1 was used to etch the lead frame and the like. The control set values are as follows. Redox potential: 600 mV, potential related to hydrogen chloride concentration: 245 mV, specific gravity 1.490. 48 ° as a drug
Mixed solution of Be ferric chloride aqueous solution and 35% hydrochloric acid aqueous solution so that the molar ratio of ferric chloride: hydrogen chloride is 16: 6.2 (this is referred to as liquid G), 38% sodium chlorate Using a mixed solution of 100 parts of aqueous solution and 0.1 part of triethylenetetramine (referred to as H solution), according to the detection result of redox potential, G solution and H solution were treated with ferric chloride: hydrogen chloride: chloric acid. The sodium was supplied at a molar ratio of 16: 6.2: 1, and the liquid G was supplied according to the detection result of the hydrogen chloride concentration. Etching temperature 50 ℃, spray pressure 1.8kg /
and cm 2, 42- alloy material, lead frame having a thickness of 0.2 mm, and camera parts of SUS-304 material was etched. The conveyor speed was appropriately changed depending on the object to be etched. Although the SUS material having a slow etching rate and a small etching area was used, the hydrogen chloride concentration detector worked during the processing, and only the G solution was frequently supplied. The analysis results of the etching solution during the operation for 10 days showed that the concentration of ferrous chloride was 0.23 to 0.25 mol / liter and the concentration of hydrogen chloride was 0.2.
09-0.12%, and the specific gravity changed from 1.488 to 1.490. The finished dimensions of each product, the linearity of etching, and the smoothness of the metal surface were all good, and no defects related to etching occurred.
【0035】比較例1 実施例1のエッチング設備を使用し、塩化水素濃度の制
御機構を停止した以外は制御設定値、エッチング条件を
同じとし実施例1のD板をエッチング処理した。10m
2処理した時点で液濁りが生じ、13m2の処理ではエッ
チング不足が原因で回路の短絡が発生しエッチングを中
止した。エッチング液の組成を実施例1と同様とした
後、塩化第二鉄:塩化水素:塩素酸ナトリウムの供給モ
ル比を4.7:6.5:1になるようにA液、B液、C液
の供給ポンプの流量を変更した。D板を100m2処理
したところ、塩化水素濃度は次第に低下し、0.3%と
なった。次いで、実施例1のF板を30m2処理したと
ころ液濁りが生じたのでエッチング処理を中止した。こ
のものの線幅100μm、線間100μmのエッチファ
クターは2.2となった。Comparative Example 1 The D plate of Example 1 was etched using the etching equipment of Example 1 with the same control set values and etching conditions except that the hydrogen chloride concentration control mechanism was stopped. 10m
At the time of 2 treatments, liquid turbidity occurred, and at 13m 2 treatment, short circuit occurred due to insufficient etching, and etching was stopped. After making the composition of the etching solution the same as that of Example 1, solutions A, B, and C were adjusted so that the supply molar ratio of ferric chloride: hydrogen chloride: sodium chlorate was 4.7: 6.5: 1. The flow rate of the liquid supply pump was changed. When the D plate was treated with 100 m 2 , the hydrogen chloride concentration gradually decreased to 0.3%. Next, when the F plate of Example 1 was treated with 30 m 2, liquid turbidity occurred, so the etching treatment was stopped. The etch factor of this product with a line width of 100 μm and a line spacing of 100 μm was 2.2.
【0036】比較例2 塩化水素濃度の制御機構を停止した実施例3の設備を使
用し、リードフレームのエッチング処理を行ったとこ
ろ、2時間でエッチング液に濁りを生じた。塩化水素と
塩素酸ナトリウムの供給モル比が7:1になるように、
G液とH液のポンプ流量を調整しリードフレームのエッ
チング処理を継続したところ、3時間でエッチング液中
の塩化水素濃度が0.3%となり、エッチングの直線性
が悪くなったためエッチングを中止した。次いで、SU
S材のカメラ部品の処理を5時間行ったが、スラッジが
発生し処理を中止した。なお、処理開始時のこのものの
エッチング表面は粗面であり、不良品となった。Comparative Example 2 When the lead frame was etched using the equipment of Example 3 in which the hydrogen chloride concentration control mechanism was stopped, the etching solution became turbid in 2 hours. So that the supply molar ratio of hydrogen chloride and sodium chlorate is 7: 1,
When the lead frame etching treatment was continued by adjusting the pump flow rates of G liquid and H liquid, the hydrogen chloride concentration in the etching liquid became 0.3% in 3 hours, and the etching linearity deteriorated, so the etching was stopped. . Then SU
The processing of the camera material of S material was carried out for 5 hours, but the processing was stopped due to the generation of sludge. The etching surface of this product at the start of the treatment was a rough surface and was a defective product.
【0037】[0037]
【発明の効果】本発明の塩化第二鉄による各種金属のエ
ッチング方法は、酸化還元電位を検知し、この結果によ
り塩素酸塩水溶液と塩化水素水溶液を自動供給し、更に
塩化水素濃度を検知し、この結果により塩化水素を含む
水溶液を自動供給することにより、常に最良の条件で連
続的にエッチング処理を行うことができるものである。The method for etching various metals with ferric chloride of the present invention detects the oxidation-reduction potential, and based on this result, the aqueous chlorate solution and the aqueous hydrogen chloride solution are automatically supplied, and the hydrogen chloride concentration is detected. As a result, by automatically supplying the aqueous solution containing hydrogen chloride, the etching process can be continuously performed under the best conditions.
【図1】本発明を実施するための装置の1例を示す図で
ある。FIG. 1 is a diagram showing an example of an apparatus for carrying out the present invention.
1 エッチング槽 2 酸化還元電位、塩化水素濃度、比重検出部 3 塩化第二鉄水溶液貯槽 4 塩化水素水溶液貯槽 5 塩素酸塩水溶液貯槽 6 エッチング液送りポンプ 7 塩化第二鉄水溶液送りポンプ 8 塩化水素水溶液送りポンプ 9 塩素酸塩水溶液送りポンプ 10 水供給配管電磁弁 11 エッチング液送り配管 12 エッチング液戻り配管 13 水供給配管 14 塩化第二鉄水溶液供給配管 15 塩化水素水溶液供給配管 16 塩素酸塩水溶液供給配管 17 各溶液、水供給の制御部 A 酸化還元電位に拘わる制御信号配線 B 塩化水素濃度に拘わる制御信号配線 C 比重に拘わる制御信号配線 1 etching tank 2 redox potential, hydrogen chloride concentration, specific gravity detection unit 3 ferric chloride aqueous solution storage tank 4 hydrogen chloride aqueous solution storage tank 5 chlorate aqueous solution storage tank 6 etching liquid feed pump 7 ferric chloride aqueous solution feed pump 8 hydrogen chloride aqueous solution Feed pump 9 Chlorate aqueous solution feed pump 10 Water supply pipe Solenoid valve 11 Etching liquid feed pipe 12 Etching liquid return pipe 13 Water supply pipe 14 Ferric chloride aqueous solution supply pipe 15 Hydrogen chloride aqueous solution supply pipe 16 Chlorate aqueous solution supply pipe 17 Control parts for supplying solutions and water A Control signal wiring related to redox potential B B Control signal wiring related to hydrogen chloride concentration C Control signal wiring related to specific gravity
フロントページの続き (72)発明者 石塚 義次 東京都荒川区東尾久7丁目2番35号 旭電 化工業株式会社内Front page continued (72) Inventor Yoshitsugu Ishizuka 7-35 Higashiohisa, Arakawa-ku, Tokyo Asahi Denka Kogyo Co., Ltd.
Claims (1)
ッチング方法において、塩素酸ナトリウム、塩素酸カリ
ウム及び塩素酸カルシウムからなる群から選択される塩
素酸塩1モルに対し、塩化水素5〜6.5モル並びに塩
化第二鉄2.5〜30モルの割合で塩素酸塩水溶液、塩
化水素水溶液及び塩化第二鉄水溶液をエッチング液に供
給するにあたり、エッチング液の酸化還元電位を検知
し、この検知結果に基づき上記溶液を別個にまたは塩化
水素水溶液と塩化第二鉄水溶液との混合溶液と塩素酸塩
水溶液とをエッチング液へ供給して予め設定された酸化
還元電位を連続的に維持し、かつエッチング液の塩化水
素濃度を検知し、この検知結果に基づき塩化水素水溶液
または塩化水素水溶液と塩化第二鉄水溶液を別個にまた
は混合溶液としてエッチング液へ供給して予め設定され
た塩化水素濃度を連続的に維持することを特徴とするエ
ッチング方法。1. A method for continuously etching a metal with an aqueous solution of ferric chloride, wherein 5 to 6 hydrogen chloride is added to 1 mol of a chlorate selected from the group consisting of sodium chlorate, potassium chlorate and calcium chlorate. When the chlorate aqueous solution, the hydrogen chloride aqueous solution and the ferric chloride aqueous solution were supplied to the etching solution at a ratio of 0.5 mol and 2.5 to 30 mol of ferric chloride, the redox potential of the etching solution was detected. Based on the detection result, the solution is separately supplied or a mixed solution of a hydrogen chloride aqueous solution and a ferric chloride aqueous solution and a chlorate aqueous solution are continuously supplied to the etching solution to maintain a preset redox potential, Moreover, the hydrogen chloride concentration of the etching solution is detected, and based on this detection result, the hydrogen chloride aqueous solution or the hydrogen chloride aqueous solution and the ferric chloride aqueous solution are etched separately or as a mixed solution. Etching method characterized by continuously maintaining a preset hydrogen chloride concentration is supplied to the grayed solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22877192A JP3320111B2 (en) | 1992-08-27 | 1992-08-27 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22877192A JP3320111B2 (en) | 1992-08-27 | 1992-08-27 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0673563A true JPH0673563A (en) | 1994-03-15 |
JP3320111B2 JP3320111B2 (en) | 2002-09-03 |
Family
ID=16881587
Family Applications (1)
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---|---|---|---|
JP22877192A Expired - Fee Related JP3320111B2 (en) | 1992-08-27 | 1992-08-27 | Etching method |
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JP (1) | JP3320111B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0910051A2 (en) | 1997-10-16 | 1999-04-21 | Aruze Co., Ltd. | Coin-sending device |
EP1041524A1 (en) | 1999-03-29 | 2000-10-04 | Aruze Co., Ltd. | Coin-receiving device |
EP1041518A1 (en) | 1999-03-29 | 2000-10-04 | Aruze Co., Ltd. | Coin-receiving device |
KR101363906B1 (en) * | 2012-03-08 | 2014-02-19 | 한밭대학교 산학협력단 | Apparatus of Removing Mg Alloy Adhered to Extruding Mold and Composition of Corrosion Solution for Removing the Mg Alloy |
-
1992
- 1992-08-27 JP JP22877192A patent/JP3320111B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0910051A2 (en) | 1997-10-16 | 1999-04-21 | Aruze Co., Ltd. | Coin-sending device |
US6029794A (en) * | 1997-10-16 | 2000-02-29 | Aruze Co., Ltd. | Coin-sending device |
EP1041524A1 (en) | 1999-03-29 | 2000-10-04 | Aruze Co., Ltd. | Coin-receiving device |
EP1041518A1 (en) | 1999-03-29 | 2000-10-04 | Aruze Co., Ltd. | Coin-receiving device |
KR101363906B1 (en) * | 2012-03-08 | 2014-02-19 | 한밭대학교 산학협력단 | Apparatus of Removing Mg Alloy Adhered to Extruding Mold and Composition of Corrosion Solution for Removing the Mg Alloy |
Also Published As
Publication number | Publication date |
---|---|
JP3320111B2 (en) | 2002-09-03 |
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