JPH0672247U - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0672247U JPH0672247U JP096934U JP9693491U JPH0672247U JP H0672247 U JPH0672247 U JP H0672247U JP 096934 U JP096934 U JP 096934U JP 9693491 U JP9693491 U JP 9693491U JP H0672247 U JPH0672247 U JP H0672247U
- Authority
- JP
- Japan
- Prior art keywords
- heat dissipation
- semiconductor device
- semiconductor element
- dissipation board
- radiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 230000017525 heat dissipation Effects 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 238000005476 soldering Methods 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000007789 sealing Methods 0.000 description 9
- 230000002950 deficient Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
(57)【要約】
【目的】電装品メーカー等の半導体装置の納入先で不良
が発生せず、かつ生産性の高い半導体装置を提供する。
【構成】金属製の放熱基板（15）及び放熱基板（15）の
一方の主面に載置されたダイオードチップ（17）を有す
る半導体素子体（32）と、半導体素子体（32）に固定さ
れた金属製の外部放熱体（13）とを備えている。放熱基
板（15）の他方の主面に形成された凹凸の結合面（15
c）は、外部放熱体（13）に形成された凹凸の結合面（1
3b）に対して熱伝導性の良い薄膜（28）を介して嵌合状
態で押圧される。半導体素子体（32）は、大量生産が可
能であり、また種々の大きさ及び形状の外部放熱体（1
3）に対し適宜組合せて放熱性の優れた半導体装置を構
成できる。
(57) [Abstract] [Purpose] To provide a semiconductor device with high productivity in which no defects occur at the delivery destination of the semiconductor device such as an electrical component manufacturer. [Structure] A semiconductor element body (32) having a metal heat dissipation board (15) and a diode chip (17) mounted on one main surface of the heat dissipation board (15), and fixed to the semiconductor element body (32) And an external heat radiator (13) made of metal. The concavo-convex joint surface (15) formed on the other main surface of the heat dissipation board (15).
c) is the concavo-convex joint surface (1) formed on the external radiator (13).
3b) is pressed in a fitted state via a thin film (28) having good thermal conductivity. The semiconductor element body (32) can be mass-produced, and external heat radiators (1) of various sizes and shapes can be manufactured.
It is possible to construct a semiconductor device with excellent heat dissipation by properly combining the above 3).
Description
【０００１】[0001]
本考案は、半導体装置、特に自動車用発電機の出力を整流に適する半導体装置 の構造に関するものである。 The present invention relates to the structure of a semiconductor device, particularly a semiconductor device suitable for rectifying the output of an automobile generator.
【０００２】[0002]
図８に示すように、自動車用発電機に使用する従来の整流装置（1）は、完成 した複数の個別的な整流ダイオード（2）を半田（3）により放熱器（4）に固着 した構造を有する。電流容量や自動車への取付構造の相違に対応して、多種多様 な形状及び大きさの放熱器（4）が選択され使用されている。整流ダイオード（2 ）は、金属容器（6）とリード電極（7）との間に半田で接着されたダイオードチ ップ（図示せず）を有し、これらのダイオードチップは金属容器（6）内に充填 され硬化した封止樹脂（5）によって封止される。 As shown in Fig. 8, a conventional rectifier (1) used in an automobile generator has a structure in which a plurality of completed individual rectifier diodes (2) are fixed to a radiator (4) with solder (3). Have. A wide variety of radiators (4) of various shapes and sizes are selected and used according to the difference in current capacity and mounting structure on automobiles. The rectifier diode (2) has a diode chip (not shown) bonded by solder between the metal container (6) and the lead electrode (7), and these diode chips are mounted on the metal container (6). It is sealed by the sealing resin (5) filled and cured inside.
【０００３】[0003]
整流装置（1）の製造工程では、半田（3）により整流ダイオード（2）を放熱 器（4）に接着する半田付け作業を行う。その際、整流ダイオード（2）はその許 容保存温度１５０℃を越える２００℃以上の温度まで放熱器（4）とともに加熱 されるので、整流ダイオード（2）の特性が劣化することがあった。 In the manufacturing process of the rectifier (1), soldering work is performed to bond the rectifier diode (2) to the radiator (4) with solder (3). At that time, since the rectifier diode (2) is heated together with the radiator (4) to a temperature of 200 ° C or more, which exceeds the allowable storage temperature of 150 ° C, the characteristics of the rectifier diode (2) may deteriorate.
【０００４】 前記半田付けを電装品メーカーで行う場合、半田付け後、粉体塗装工程等を行 い、その後に整流装置（1）の品質検査を行うのが一般的である。従って、半田 付け作業で特性が劣化した不良の整流ダイオード（2）を含む不良品である整流 装置（1）に対して粉体塗装等を行う無駄がある。When the above-mentioned soldering is performed by an electric component manufacturer, it is general that after the soldering, a powder coating process or the like is performed, and then a quality inspection of the rectifying device (1) is performed. Therefore, it is wasteful to perform powder coating or the like on the defective rectifying device (1) including the defective rectifying diode (2) whose characteristics are deteriorated by the soldering work.
【０００５】 他面、半導体装置メーカーは、出荷先で不良にならない製品の製造及び納入を 目標としている。電装品メーカーで整流ダイオード（2）に不良が発生すると、 理由の如何を問わず、半導体装置メーカーの責任を問われる危険がある。そこで 、半導体装置メーカーが整流ダイオード（2）の半田付け作業を請け負い、半田 付けに伴う不良品を除いて、電装品メーカーに整流装置（1）を納入する生産納 品形態が採用されることが多い。On the other hand, semiconductor device manufacturers aim to manufacture and deliver products that do not become defective at the shipping destination. If a defect occurs in the rectifier diode (2) at an electrical equipment manufacturer, there is a danger that the semiconductor device manufacturer will be held responsible for whatever reason. Therefore, a semiconductor device manufacturer may undertake the work of soldering the rectifier diode (2), and excluding defective products due to soldering, the rectifier device (1) is delivered to the electrical equipment maker. Many.
【０００６】 しかし、半導体装置メーカーが整流ダイオード（2）の半田付け作業を行う場 合、前述のように、放熱器には多種多様の大きさ及び形状があるので、整流装置 （1）の生産は少量多品種となり、生産性が低下する。また、半導体装置メーカ ーと電装品メーカーの両方が整流ダイオード（2）に比べて遥かに大きな放熱器 （4）を扱わなければならない不便がある。However, when the semiconductor device manufacturer solders the rectifier diode (2), as described above, since the radiator has various sizes and shapes, the rectifier device (1) is produced. Is a small quantity and a large variety of products, and productivity is reduced. There is also the inconvenience that both semiconductor device manufacturers and electrical equipment manufacturers have to deal with radiators (4) that are much larger than rectifier diodes (2).
【０００７】 そこで本考案は、電装品メーカー等の半導体装置の納入先で不良が発生せず、 かつ生産性の高い半導体装置を提供することを目的とする。[0007] Therefore, an object of the present invention is to provide a semiconductor device such as an electric component manufacturer that does not cause a defect at the delivery destination of the semiconductor device and has high productivity.
【０００８】[0008]
本考案の半導体装置は、金属製の放熱基板及び放熱基板の一方の主面に載置さ れた半導体素子を有する半導体素子体と、半導体素子体に固定された金属製の外 部放熱体とを備えている。放熱基板の他方の主面に形成された凹凸の結合面は、 外部放熱体に形成された凹凸の結合面に対して熱伝導性の良い薄膜を介して嵌合 状態で押圧される。 The semiconductor device of the present invention includes a metal heat dissipation board and a semiconductor element body having a semiconductor element mounted on one main surface of the heat dissipation board, and a metal outer heat dissipation body fixed to the semiconductor element body. Is equipped with. The concavo-convex coupling surface formed on the other main surface of the heat dissipation substrate is pressed in a fitted state against the concavo-convex coupling surface formed on the external heat radiator via a thin film having good thermal conductivity.
【０００９】[0009]
半導体素子体は、大量生産が可能であり、また種々の大きさ及び形状の外部放 熱体に対し適宜組合せて放熱性の優れた半導体装置を構成できる。更に、放熱基 板の結合面と外部放熱体の結合面との間に熱伝導性の良い薄膜が介在して両者が 嵌合されるので、放熱基板から外部放熱体への熱伝導性が向上する。 The semiconductor element body can be mass-produced, and a semiconductor device having excellent heat dissipation can be configured by appropriately combining with external heat radiators of various sizes and shapes. Furthermore, since a thin film with good thermal conductivity is interposed between the bonding surface of the heat dissipation base plate and the bonding surface of the external heat radiator, they are fitted together, so that the thermal conductivity from the heat dissipation board to the external heat radiator is improved. To do.
【００１０】[0010]
以下、自動車用整流装置に適用した本考案の第一実施例を図１〜図６について 説明する。 Hereinafter, a first embodiment of the present invention applied to a vehicle rectifier will be described with reference to FIGS.
【００１１】 図１に示すように、本考案の半導体装置（11）は、半導体素子体（12）と半導 体素子体（12）に固着された外部放熱体（13）とから成る。半導体素子体（12） は３個の整流ダイオード（14）と放熱基板（15）とを有する。As shown in FIG. 1, the semiconductor device (11) of the present invention comprises a semiconductor element body (12) and an external heat radiator (13) fixed to the semiconductor element body (12). The semiconductor element body (12) has three rectifying diodes (14) and a heat dissipation board (15).
【００１２】 整流ダイオード（14）の各々は、放熱基板（15）の一方の主面（15a）上に半 田（16）により接着されたダイオードチップ（17）を有する。ダイオードチップ （17）の上面には、半田（18）を介してリード電極（19）が接着されている。ダ イオードチップ（17）全体とリード電極（19）の一端側は、シリコン樹脂より成 る保護樹脂（20）により被覆されている。保護樹脂（20）とリード電極（19）の 一端側は、エポキシ樹脂より成る封止樹脂（21）により被覆されている。図２及 び図３に示すように、リード電極（19）の他端側は封止樹脂（21）より導出され ている。Each of the rectifying diodes (14) has a diode chip (17) bonded by a half pad (16) on one main surface (15a) of the heat dissipation board (15). The lead electrode (19) is bonded to the upper surface of the diode chip (17) through the solder (18). The entire diode chip (17) and one end of the lead electrode (19) are covered with a protective resin (20) made of silicone resin. One ends of the protective resin (20) and the lead electrode (19) are covered with a sealing resin (21) made of epoxy resin. As shown in FIGS. 2 and 3, the other end of the lead electrode (19) is led out from the sealing resin (21).
【００１３】 放熱基板（15）は、放熱性の優れた金属、例えばニッケルで被覆した銅より成 る。放熱基板（15）の他方の主面（15b）は、凹凸の結合面（15c）を有する。外 部放熱体（13）の一方の主面（13a）は放熱基板（15）の凹凸の結合面（15c）と 係合する凹凸の結合面（13b）を有する。The heat dissipation substrate (15) is made of a metal having excellent heat dissipation, for example, copper coated with nickel. The other main surface (15b) of the heat dissipation board (15) has an uneven coupling surface (15c). One main surface (13a) of the outer heat radiator (13) has an uneven connecting surface (13b) that engages with the uneven connecting surface (15c) of the heat dissipation board (15).
【００１４】 放熱基板（15）の凹凸の結合面（15c）は鋸歯状断面を有し、その凹部は平行 に走る多数本のＶ溝を形成する。放熱器板（15）の両端には、取付けネジ（23） を挿通する貫通孔（24）が設けてある。外部放熱体（13）は、アルミニウム等の 放熱性のよい金属より成る。外部放熱体（13）の凹凸の結合面（13b）は、放熱 基板（15）の凹凸の結合面（15c）と係合するように相補的形状の鋸歯状断面を 有し、その凹部は平行に走るＶ溝を形成する。また、一方の主面（13a）には、 取付ネジ孔（25）が設けてある。外部放熱体（13）の他方の主面（13c）には、 放熱作用を促進する放熱フィン（26）が設けられる。図５に部分的に拡大して示 すように、凹凸の結合面（13b）と（15c）との間にアルミ箔等の熱伝導性の良い 薄膜（28）が配置される。半導体素子体（12）は、ワッシャ（27）を介して取付 ネジ（23）によって外部放熱体（13）に取付けられる。取付ネジ（23）の締付け の際、放熱基板（15）の凹凸の結合面（15c）は外部放熱体（13）の凹凸の結合 面（13b）に対し押圧され、互いに嵌合状態で強く密着結合するから、放熱基板 （15）の他方の主面（15b）と外部放熱器（13）の一方の主面（13a）は熱伝導性 の良い薄膜（28）を介して熱伝達の良好な結合部を形成する。この場合、凹凸の 結合面（13b）と（15c）の各凸部の先端を一定の高さで微かにカットして、凹凸 の結合面（13b）と（15c）とを均一に密着させるとよい。The concavo-convex coupling surface (15c) of the heat dissipation substrate (15) has a saw-toothed cross section, and the concave portion forms a plurality of V grooves running in parallel. Through holes (24) for inserting the mounting screws (23) are provided at both ends of the radiator plate (15). The external heat radiator (13) is made of a metal having a good heat radiation property such as aluminum. The concavo-convex mating surface (13b) of the external heat radiator (13) has a complementary sawtooth cross section so as to engage with the concavo-convex mating surface (15c) of the heat dissipation board (15), and the recesses thereof are parallel. Forming a V-groove that runs to. A mounting screw hole (25) is provided on one main surface (13a). The other main surface (13c) of the external heat radiator (13) is provided with heat radiation fins (26) for promoting heat radiation. As shown in a partially enlarged view in FIG. 5, a thin film (28) having good thermal conductivity such as an aluminum foil is arranged between the concavo-convex coupling surfaces (13b) and (15c). The semiconductor element body (12) is attached to the external heat radiator (13) by the attaching screw (23) via the washer (27). When tightening the mounting screw (23), the uneven connection surface (15c) of the heat dissipation board (15) is pressed against the uneven connection surface (13b) of the external heat radiator (13), and firmly adheres to each other in a fitted state. Since they are coupled, the other main surface (15b) of the heat dissipation board (15) and one main surface (13a) of the external radiator (13) have good heat transfer through the thin film (28) having good heat conductivity. Form a joint. In this case, if the tip of each convex part of the concavo-convex joint surfaces (13b) and (15c) is slightly cut at a constant height, the concavo-convex joint surfaces (13b) and (15c) can be evenly adhered. Good.
【００１５】 例えば図４の自動車用交流発電機の整流回路に使用される半導体装置（11）の ダイオードチップ１７は、破線で示す並列接続部（a）及び（b）において自動車 用交流発電機より得られる三相交流を整流する。For example, the diode chip 17 of the semiconductor device (11) used in the rectifier circuit of the automotive alternator of FIG. 4 has a parallel connection part (a) and (b) indicated by broken lines from the automotive alternator. Rectify the resulting three-phase alternating current.
【００１６】 本考案では、従来のように半田付けを必要とせずに、半導体素子体（12）を外 部放熱体（13）に取付けることができるから、半導体装置メーカーは、上記取付 けを電装品メーカーに依託することが可能となった。これにより本実施例では、 半導体装置メーカーにて半導体素子体（12）を製造し、電装品メーカーに納入で きる。電装品メーカーでは、自動車の車種等に応じた種々の大きさ、形状を有す る外部放熱体（13）を用意し、ねじ止めにより半導体装置（11）を組立てる。According to the present invention, the semiconductor element body (12) can be attached to the external heat radiating body (13) without the need for soldering as in the conventional case. It became possible to entrust the product manufacturer. As a result, in this embodiment, the semiconductor device body (12) can be manufactured by the semiconductor device manufacturer and delivered to the electrical equipment manufacturer. An electrical component manufacturer prepares external heat radiators (13) having various sizes and shapes according to the type of automobile, and assembles the semiconductor device (11) by screwing.
【００１７】 上記工程を経て完成する半導体装置（11）は、放熱特性にも問題はなく生産性 も向上することが判明した。特に、樹脂封止後は、整流ダイオード（14）に対し て半田付けを行わないので、従来問題となった半田付けに伴う整流ダイオードの 特性劣化は全く起こらない。It has been found that the semiconductor device (11) completed through the above steps has no problem in heat dissipation characteristics and also has improved productivity. In particular, since the rectifier diode (14) is not soldered after resin encapsulation, there is no deterioration of the rectifier diode characteristics due to the conventional soldering.
【００１８】 また、従来の整流装置（1）では、整流ダイオード（2）を放熱器（4）に固着 する際の半田付けにより、整流ダイオード（2）の封止樹脂（5）が加熱され、ク ラックが生じたり、金属容器（6）又はリード電極（7）と封止樹脂（5）との間 に剥離が発生する危険があった。このため、封止樹脂（5）として硬質樹脂を使 用できず、軟質樹脂のみを使用していた。ところが、軟質樹脂は、外部からの有 害物質の侵入を防止する能力の点で硬質樹脂に比べて遥かに劣る。本考案の第一 実施例では、樹脂封止後に整流ダイオードを被接着体に半田付けで固着しないの で、封止樹脂（21）として硬質樹脂を使用でき、封止樹脂の材料選択の自由度が 向上するので、耐環境性能を向上させることが可能となる。In the conventional rectifier (1), the sealing resin (5) of the rectifier diode (2) is heated by soldering when fixing the rectifier diode (2) to the radiator (4), There was a risk of cracking or peeling between the metal container (6) or the lead electrode (7) and the sealing resin (5). Therefore, the hard resin cannot be used as the sealing resin (5), and only the soft resin is used. However, the soft resin is far inferior to the hard resin in the ability to prevent the entry of harmful substances from the outside. In the first embodiment of the present invention, since the rectifying diode is not fixed to the adherend by soldering after the resin is sealed, a hard resin can be used as the sealing resin (21), and the degree of freedom in selecting the material for the sealing resin is high. It is possible to improve the environmental resistance performance as the result is improved.
【００１９】 次に、本考案の第二実施例を示す図７について説明する。図７では、図１及び 図８に示す部分と同一の個所については同一符号を付し、説明を省略する。第二 実施例の整流装置（31）は、整流ダイオード（2）と放熱基板（15）から成る半 導体素子体（32）を外部放熱体（13）に取付けた構造を有する。放熱基板（15） の上面には、半田（3）を介して３個の整流ダイオード（2）が接着されている。 整流ダイオード（2）は、図８のものと同一であり、また放熱基板（15）と外部 放熱体（13）の結合構造は図１のものと同一である。第二実施例では、半田付け による特性劣化を防止する効果はあまり高くないが、後工程又は電装品メーカー での故障防止効果及び形状又は大きさの異なる外部放熱体を使用できる利点は発 揮される。Next, FIG. 7 showing a second embodiment of the present invention will be described. In FIG. 7, the same parts as those shown in FIGS. 1 and 8 are designated by the same reference numerals, and the description thereof will be omitted. The rectifier (31) of the second embodiment has a structure in which a semiconductor element body (32) consisting of a rectifier diode (2) and a heat dissipation board (15) is attached to an external heat dissipation body (13). Three rectifying diodes (2) are bonded to the upper surface of the heat dissipation board (15) via solder (3). The rectifier diode (2) is the same as that of FIG. 8, and the coupling structure of the heat dissipation board (15) and the external heat dissipation body (13) is the same as that of FIG. In the second embodiment, the effect of preventing characteristic deterioration due to soldering is not very high, but the effect of preventing failures in the post-process or electrical equipment manufacturers and the advantage of being able to use external heat radiators of different shapes or sizes are realized. It
【００２０】 本考案の上記実施例は種々の変形が可能である。例えば、３個の整流ダイオー ドを含む本考案の半導体装置を図４に示したが、図４の並列接続部（a）（b）の 整流ダイオ−ド各１個から成る２個の整流ダイオードを含む半導体装置にも本考 案を実施することも可能である。ニッケルで被覆した銅の代りに、アルミニウム 材を放熱基板（15）として使う場合、整流ダイオードの固着部分には半田付けが 必要となるので、アルミニウム材の上にニッケル層を形成するとよい。このニッ ケル層は、亜鉛の置換メッキ層を介してニッケルメッキを行うか、ニッケル層を 圧着して形成することができる。放熱基板（15）の取付けはねじ止めが最適であ るが、リベット止め等で行なうこともできる。The above embodiment of the present invention can be variously modified. For example, a semiconductor device of the present invention including three rectifying diodes is shown in FIG. 4, and two rectifying diodes each including one rectifying diode of the parallel connection parts (a) and (b) of FIG. It is also possible to apply the present invention to a semiconductor device including. If an aluminum material is used as the heat dissipation board (15) instead of nickel-coated copper, soldering is required for the fixed part of the rectifier diode, so it is advisable to form a nickel layer on the aluminum material. This nickel layer can be formed by nickel plating through a displacement plating layer of zinc or by pressure bonding of the nickel layer. The heat dissipation board (15) is best attached with screws, but it can also be attached with rivets.
【００２１】 本実施例の効果は以下の通りである。The effects of this embodiment are as follows.
【００２２】 （1） 整流装置の生産性を向上できる。即ち本考案の半導体装置では、半導 体素子体の大きさ又は形状を変更することなく、形状、大きさの異なる外部放熱 体に取付けることにより、電流容量又は取付け構造によって異なる多種多様な要 求に広く対応できる。電装品メーカーでは、前述の半田付け作業を必要とせず、 半導体素子体の外部放熱体への取付けを行うことができる。よって半導体装置メ ーカーとしては、整流装置の生産体制を少量多品種生産から多量生産へ移行する ことが可能となり、生産性を向上することができる。外部放熱体に比べて放熱基 板は小さいから、半導体装置メーカーが小形の半導体素子体を扱える点で生産性 向上のメリットも生まれる。なお電装品メーカーの場合は、多種多様な自動車に 合わせた生産体制が採用され、半導体装置メーカーより大きい物品を扱うので、 外部放熱体を扱っても生産性は実質的に低下しない。(1) The productivity of the rectifier can be improved. That is, in the semiconductor device of the present invention, the semiconductor device is mounted on external heat radiators having different shapes and sizes without changing the size or shape of the semiconductor element body, and thus various requirements depending on the current capacity or the mounting structure are required. Can be widely applied to. The electrical equipment manufacturer can attach the semiconductor element body to the external heat radiator without the need for the above-mentioned soldering work. Therefore, as a semiconductor device manufacturer, it is possible to shift the production system of the rectifier from small-quantity high-mix production to high-volume production, and improve productivity. Since the heat dissipation board is smaller than the external heat dissipation body, there is also an advantage in improving productivity in that semiconductor device manufacturers can handle small semiconductor element bodies. In addition, in the case of electrical equipment manufacturers, the production system adapted to a wide variety of automobiles is adopted, and since products that are larger than semiconductor device manufacturers are handled, the productivity does not substantially decrease even if external heat radiators are handled.
【００２３】 （2） 半導体装置メーカーは半導体素子体の組立を行い、製品検査後に、出 荷先で不良が起きない良品のみを電装品メーカーに納入できる。(2) A semiconductor device maker can assemble a semiconductor element body, and after a product inspection, can deliver only non-defective products that do not cause defects at the shipping destination to the electrical component manufacturer.
【００２４】 （3） 製品の検査後に、半導体装置メーカーから納入された製品に粉体塗装 等の加工を行うので、不良品に粉体塗装等の加工を行う電装品メーカーでの無駄 工程の削減が可能となる。(3) After the product inspection, the products delivered from the semiconductor device manufacturer are subjected to powder coating and other processing, so reduction of wasteful processes at electrical component manufacturers that perform powder coating and other processing on defective products Is possible.
【００２５】 （4） 本考案の放熱基板は、従来の放熱器よりも小さくかつ熱容量も小さい から、所定の半田付温度に達するまでの時間及び半田付温度からある温度まで冷 える時間が短くなる。従って本考案では、半田付時間は従来と同じでも、整流ダ イオードの高温保持時間を短縮できるので、整流ダイオードの特性劣化が生じに くい。整流ダイオードを被接着体に接着する半田付けにおいて不良ダイオードの 発生を軽減することができる。(4) Since the heat dissipation board of the present invention is smaller and has a smaller heat capacity than the conventional heat sink, the time required to reach a predetermined soldering temperature and the time required to cool from a soldering temperature to a certain temperature are shortened. . Therefore, in the present invention, even if the soldering time is the same as the conventional one, the high temperature holding time of the rectifier diode can be shortened, and the characteristic deterioration of the rectifier diode is less likely to occur. It is possible to reduce the occurrence of defective diodes in soldering for bonding the rectifier diode to the adherend.
【００２６】[0026]
前述のように、本考案では、放熱基板の凹凸の結合面は、外部放熱体の凹凸の 結合面に対して熱伝導性の良い薄膜を介して嵌合状態で押圧されるので、良好な 放熱性を有する半導体装置が得られる。 As described above, according to the present invention, the concavo-convex joint surface of the heat dissipation board is pressed against the concavo-convex joint surface of the external radiator through the thin film having good thermal conductivity in a fitted state, so that good heat dissipation is achieved. A semiconductor device having properties is obtained.
【図１】本考案による半導体装置の第一実施例を示す図
２のＩ−Ｉ線に沿う分解断面図FIG. 1 is an exploded sectional view taken along the line II of FIG. 2 showing a first embodiment of a semiconductor device according to the present invention.
【図２】半導体装置の斜視図FIG. 2 is a perspective view of a semiconductor device.
【図３】図２のIII−III線に沿う断面図FIG. 3 is a sectional view taken along line III-III in FIG.
【図４】本考案による半導体装置を接続した回路図FIG. 4 is a circuit diagram in which a semiconductor device according to the present invention is connected.
【図５】放熱基板と外部放熱体の間に薄膜を挿入する場
合の分解断面図FIG. 5 is an exploded sectional view when a thin film is inserted between a heat dissipation board and an external heat dissipation body.
【図６】図５の組立後の断面図6 is a cross-sectional view after assembly of FIG.
【図７】本考案の第二実施例を示す半導体装置の斜視図FIG. 7 is a perspective view of a semiconductor device showing a second embodiment of the present invention.
【図８】従来の半導体装置の斜視図FIG. 8 is a perspective view of a conventional semiconductor device.
（2）、（14）．．整流ダイオード、 （11）、（3
1）．．半導体装置、 （12）、（32）．．半導体素子
体、 （13）．．外部放熱体、 （13a）．．一方の主
面、 （13b）．．凹凸の結合面、 （15）．．放熱基
板、 （15a）．．一方の主面、 （15b）．．他方の主
面、 （15c）．．凹凸の結合面、 （17）．．ダイオー
ドチップ（半導体素子）、 （21）．．封止樹脂、 （2
8）．．薄膜、(2), (14). ． Rectifier diode, (11), (3
1). ． Semiconductor device, (12), (32). ． Semiconductor device body, (13). ． External radiator, (13a). ． One main surface, (13b). ． Concavo-convex coupling surface, (15). ． Heat dissipation board, (15a). ． One major surface, (15b). ． The other major surface, (15c). ． Concavo-convex joint surface, (17). ． Diode chip (semiconductor element), (21). ． Sealing resin, (2
8). ． Thin film,
Claims (4)
の主面に載置された半導体素子を有する半導体素子体
と、該半導体素子体に固定された金属製の外部放熱体と
を備え、前記放熱基板の他方の主面に形成された凹凸の
結合面は、前記外部放熱体に形成された凹凸の結合面に
対して熱伝導性の良い薄膜を介して嵌合状態で押圧され
ることを特徴とする半導体装置。1. A semiconductor element body having a metal heat dissipation board and a semiconductor element mounted on one main surface of the heat dissipation board, and a metal external heat dissipation body fixed to the semiconductor element body. The uneven coupling surface formed on the other main surface of the heat dissipation substrate is pressed against the uneven coupling surface formed on the external heat radiator in a fitted state via a thin film having good thermal conductivity. A semiconductor device characterized by the above.
はテーパ状の凹凸として形成された「請求項１」記載の
半導体装置。2. The semiconductor device according to claim 1, wherein a coupling surface of the unevenness of the heat dissipation substrate and the external heat dissipation body is formed as a tapered unevenness.
フィンを有する「請求項１」記載の半導体装置。3. The semiconductor device according to claim 1, wherein the other main surface of the external heat radiator has a large number of heat radiation fins.
れた個別的な整流ダイオ−ドである「請求項１」記載の
半導体装置。4. The semiconductor device according to claim 1, wherein the semiconductor element is an individual rectifying diode bonded to the heat dissipation board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991096934U JPH0711472Y2 (en) | 1991-11-26 | 1991-11-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991096934U JPH0711472Y2 (en) | 1991-11-26 | 1991-11-26 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0672247U true JPH0672247U (en) | 1994-10-07 |
| JPH0711472Y2 JPH0711472Y2 (en) | 1995-03-15 |
Family
ID=14178171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991096934U Expired - Lifetime JPH0711472Y2 (en) | 1991-11-26 | 1991-11-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0711472Y2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009110045A1 (en) * | 2008-03-05 | 2009-09-11 | 株式会社 東芝 | Structure for attaching component having heating body mounted thereon |
| WO2010090326A1 (en) * | 2009-02-09 | 2010-08-12 | 株式会社安川電機 | Semiconductor device cooling structure and power converter provided with the cooling structure |
| JP2012222111A (en) * | 2011-04-07 | 2012-11-12 | Shindengen Electric Mfg Co Ltd | Electric component module |
| JP2013165122A (en) * | 2012-02-09 | 2013-08-22 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
| JP2018064399A (en) * | 2016-10-14 | 2018-04-19 | 日立造船株式会社 | Thermoelectric generator |
| CN110323193A (en) * | 2019-07-19 | 2019-10-11 | 南京伯克利新材料科技有限公司 | A kind of radiator structure |
| US11152280B2 (en) | 2016-11-24 | 2021-10-19 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
| KR102538923B1 (en) * | 2022-02-18 | 2023-06-08 | 주식회사 비와이티이씨 | LED lighting fixtures |
-
1991
- 1991-11-26 JP JP1991096934U patent/JPH0711472Y2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009110045A1 (en) * | 2008-03-05 | 2009-09-11 | 株式会社 東芝 | Structure for attaching component having heating body mounted thereon |
| JP2009212390A (en) * | 2008-03-05 | 2009-09-17 | Toshiba Corp | Attachment structure of heating element mounted component |
| EP2251902A4 (en) * | 2008-03-05 | 2014-10-08 | Toshiba Kk | Structure for attaching component having heating body mounted thereon |
| WO2010090326A1 (en) * | 2009-02-09 | 2010-08-12 | 株式会社安川電機 | Semiconductor device cooling structure and power converter provided with the cooling structure |
| JP2012222111A (en) * | 2011-04-07 | 2012-11-12 | Shindengen Electric Mfg Co Ltd | Electric component module |
| JP2013165122A (en) * | 2012-02-09 | 2013-08-22 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
| JP2018064399A (en) * | 2016-10-14 | 2018-04-19 | 日立造船株式会社 | Thermoelectric generator |
| US11152280B2 (en) | 2016-11-24 | 2021-10-19 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
| CN110323193A (en) * | 2019-07-19 | 2019-10-11 | 南京伯克利新材料科技有限公司 | A kind of radiator structure |
| KR102538923B1 (en) * | 2022-02-18 | 2023-06-08 | 주식회사 비와이티이씨 | LED lighting fixtures |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0711472Y2 (en) | 1995-03-15 |
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