JPH0668634B2 - Light receiving member - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to light (here, light in a broad sense, ultraviolet light, visible light,
The present invention relates to a light receiving member sensitive to electromagnetic waves such as infrared rays, X rays, and γ rays). More specifically, it relates to a light receiving member suitable for using coherent light such as laser light.

[Description of Prior Art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light receiving member with laser light modulated according to the digital image information, and then the latent image is developed, Further, a method for recording an image is known, in which transfer, fixing and the like are performed as necessary. In particular, in the image forming method by electrophotography, a small and inexpensive He-Ne laser or semiconductor laser ( It is common to carry out image recording using a light emission wavelength of 650 to 820 nm).

By the way, as a light receiving member for electrophotography suitable when using a semiconductor laser, in addition to the fact that the matching of the light sensitive region is superior to other types of light receiving members,
The Vickers hardness is high, and the problem of pollution is small. It is evaluated, for example, in JP-A-54-86341 and JP-A-56-837.
Attention has been paid to a light receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "a-Si") as disclosed in Japanese Patent No. 46.

However, in the above-mentioned light receiving member, when the light receiving layer is an a-Si layer having a single layer structure, it is possible to secure a dark resistance of 10 ¹² Ωcm or more required for electrophotography while maintaining its high photosensitivity. Is required to structurally contain a hydrogen atom, a halogen atom, or a boron atom in addition to them in a controlled amount in a specific amount range. Therefore, various conditions for forming a layer are required. There is a considerable limit to the tolerance of the design of the light receiving member, such as the need to strictly control the It has been proposed to improve the design tolerance by making the high photosensitivity effective even if the dark resistance is low to some extent. That is, for example, JP 54-121743 A, JP 57-
No. 4053, JP-A-57-4172, the light-receiving layer has a layered structure of two or more layers in which layers having different conductivity characteristics are laminated, and a depletion layer is formed inside the light-receiving layer, or JP-A-57-52178, 52179, 52180, 58159
No. 58160, No. 58161, each of which has a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or / and on the upper surface of the photoreceptive layer. A light receiving member having improved dark resistance has been proposed.

However, such a light-receiving member having a multi-layered light-receiving layer has variations in the layer thickness of each layer, and when laser recording is performed using this, the laser light is a coherent monochromatic light. The free surface of the layer on the laser light irradiation side, each layer constituting the light receiving layer, and the layer interface between the support and the light receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as "interface"). Often, each of the reflected light that is more reflected causes interference.

This interference phenomenon is a so-called
It appears as an interference fringe pattern, which causes a defective image. In particular, when forming a halftone image with high gradation, a blocking image with extremely poor discrimination is provided.

Another important point is that the absorption of the laser light in the light-receiving layer decreases as the wavelength region of the semiconductor laser light used becomes longer, which causes a problem that the interference phenomenon becomes remarkable. .

That is, for example, in a structure having two or more layers (multilayer), an interference effect occurs in each of these layers, and the respective interferences act synergistically to form an interference fringe pattern. However, there is a problem that the transfer fringes affect the transfer member, and the interference fringes corresponding to the interference fringes are transferred and fixed on the transfer member to appear on the visible image, resulting in a defective image.

As a measure to solve such a problem, (a) a diamond is cut on the surface of the support to form a light-scattering surface by providing irregularities of ± 500Å to ± 10000Å (see, for example, JP-A-58-162975), (b) a method of providing a light absorbing layer by black-anodizing the surface of an aluminum support, or dispersing carbon, a coloring pigment, or a dye in a resin (see, for example, JP-A-57-165845), (c) A method of providing a light-scattering and antireflection layer on the surface of an aluminum support by subjecting the surface of the aluminum support to a matte finish alumite treatment, or by providing sand-blasted fine irregularities in a grain shape (for example, JP-A-57-165).
Japanese Patent No. 54) is proposed.

Although these proposed methods bring some results, they are not sufficient to completely eliminate the interference fringe pattern appearing on the image.

That is, with respect to the method (a), a large number of specific irregularities are provided on the surface of the support, and although the appearance of an interference fringe pattern due to the light scattering effect is prevented for a while, it still remains as light scattering. Since the specularly reflected light component remains, the interference fringe pattern due to the specularly reflected light remains, and in addition, the irradiation spots spread due to the light scattering effect on the support surface, which causes a substantial reduction in resolution. Will end up.

With regard to the method (b), the black alumite treatment cannot completely absorb the light, and the reflected light on the surface of the support remains. When a color pigment dispersed resin layer is provided, a
-When the -Si layer is formed, the degassing phenomenon occurs in the resin layer, the layer quality of the formed light-receiving layer is significantly deteriorated, and the resin layer is damaged by the plasma during the formation of the a-Si layer. Then, there is a problem that the original absorption function is reduced and the subsequent formation of the a-Si layer is adversely affected by the deterioration of the surface state.

With regard to the method (c), for example, regarding incident light, a part of the incident light is reflected on the surface of the light-receiving layer to be reflected light, and the rest enters the light-receiving layer to be transmitted light. On the surface of the support, part of the transmitted light is scattered and becomes diffused light, and the rest is specularly reflected and becomes reflected light, and part of it becomes outgoing light and goes out. However, the emitted light is
Since it is a component that interferes with the reflected light and remains in any case, the interference fringe pattern still does not completely disappear.

By the way, in order to prevent interference in this case, there is an attempt to increase the diffusivity of the surface of the support so that multiple reflection inside the light-receiving layer does not occur. The light diffuses to cause halation, which eventually reduces the resolution.

In particular, in the light receiving member having a multilayer structure, even if the surface of the support is irregularly roughened, the light reflected by the first layer surface, the light reflected by the second layer, and the specular light reflected by the surface of the support are Interference results in an interference fringe pattern according to the thickness of each layer of the light receiving member. Therefore, in the light receiving member having a multilayer structure, it is impossible to completely prevent the interference fringes by irregularly roughening the surface of the support.

Also, when the surface of the support is irregularly roughened by a method such as sandblasting, the surface roughness varies widely among the lots, and even within the same lot, the surface roughness is uneven. , There is a problem in manufacturing control. In addition, relatively large projections are often formed randomly, and such large projections cause local breakdown of the photoreceptor layer.

Also, when the surface of the support is simply roughened,
Since the light receiving layer is deposited along the uneven shape of the surface of the support, the uneven surface of the uneven surface of the support and the uneven surface of the uneven surface of the light receiving layer are parallel to each other, and the incident light is bright In addition, a light and dark stripe pattern appears due to the non-uniformity of the layer thickness of the light receiving layer in the entire light receiving layer. Therefore, it is not possible to completely prevent the occurrence of interference fringe patterns only by regularly roughening the surface of the support.

Also, when a light-receiving layer having a multi-layered structure is deposited on a support whose surface is regularly roughened, regular reflection light on the support surface,
In addition to the interference with the reflected light on the surface of the light receiving layer, the interference due to the reflected light at the interface between the layers is added, so that the degree of appearance of the interference fringe pattern of the light receiving member having a further structure becomes more complicated.

[Object of the Invention] An object of the present invention is to eliminate the above-mentioned problems and satisfy various requirements in a light-receiving member having a light-receiving layer mainly composed of a-Si. .

That is, the main object of the present invention is that electrical, optical, and photoconductive properties are substantially stable regardless of the use environment, are substantially stable to light, and have excellent light fatigue resistance, and even when repeatedly used, a deterioration phenomenon. To provide a light-receiving member having a light-receiving layer composed of a-Si, which is excellent in durability and moisture resistance, has no or almost no residual potential observed, and is easy to manage in production. is there.

Another object of the present invention is to provide a photoreceptive member having a photoreceptive layer composed of a-Si, which has a high photosensitivity in the entire visible light region, an excellent matching property with a semiconductor laser, and a fast photoresponse. To provide.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer composed of a-Si, which has high photosensitivity, high SN ratio characteristics, and high electrical withstand voltage.

Another object of the present invention is to provide excellent adhesion between the layer provided on the support and the support or between the layers of the laminated layers,
The structure is precise and stable, and the layer quality is high.
It is to provide a light receiving member having a light receiving layer composed of Si.

Still another object of the present invention is suitable for image formation using coherent monochromatic light, and even during long-term repeated use, there is no appearance of interference fringe patterns and spots during reversal development, and there are no image defects or images. To provide a light-receiving member having a light-receiving layer composed of a-Si, capable of obtaining a high-quality image with high density, high density, clear halftone, and no blurring. It is in.

[Structure of Invention]

The present inventors have earnestly studied to overcome the above-mentioned problems of the conventional light-receiving member and achieve the above-mentioned object, and as a result, have obtained the following findings, and based on the findings, the present invention Was completed.

That is, the light receiving member of the present invention has at least a photosensitive layer composed of an amorphous material containing a silicon atom and at least one selected from an oxygen atom, a carbon atom and a nitrogen atom on a support. A light receiving member having a light receiving layer having a multi-layered structure having a width D of a recess on the surface of the support.
Is 500 μm or less, the radius of curvature R of the depression and the width D are 0.035 ≦ D /
It is characterized in that it has irregularities due to a plurality of spherical trace dents designated as R, and that minute irregularities of 0.5 to 20 μm are further formed in the spherical trace dents.

By the way, the findings obtained by the inventors of the present invention as a result of earnest research are: outline, in a light-receiving member having a plurality of layers on a support, the support surface is provided with irregularities due to a plurality of spherical trace depressions, In addition, the problem of interference fringe patterns appearing during image formation is remarkably solved by providing a plurality of finer concavo-convex shapes in the spherical trace depressions.

This finding is based on the factual relations obtained by various experiments that the present inventors have tried.

This will be described below with reference to the drawings in order to facilitate understanding.

FIG. 1 is a schematic diagram showing a layer structure of the light receiving member 100 according to the present invention, which has an uneven shape due to a plurality of minute spherical trace dents, and further includes a plurality of finer spherical dents. 1 shows a light receiving member including a light receiving layer 102 composed of a first layer 102 ′ and a second layer 102 ″ on a support 101 having an uneven shape along the inclined surface of the unevenness.

2 and 4 are views for explaining the problem of the interference fringe pattern in the light receiving member of the present invention.

FIG. 3 is an enlarged view showing a part of a conventional light receiving member in which a light receiving layer having a multilayer structure is deposited on a support whose surface is regularly roughened. In the figure, 301 is the first layer, 3
02 indicates the second layer, 303 indicates the free surface, and 304 indicates the interface between the first layer and the second layer. As shown in FIG.
When the surface of the support is simply roughened by a means such as cutting, the light-receiving layer is usually formed along the irregular shape of the surface of the support, and therefore the uneven surface of the surface of the support is uneven. And the inclined surface of the unevenness of the light receiving layer have a parallel relationship.

Due to this, for example, the light receiving layer is the first layer 301.
Then, in the light receiving member having a multilayer structure composed of two layers, that is, the second layer 302, for example, the following problems are constantly caused. That is, since the interface 304 between the first layer and the second layer and the free surface 303 are in a parallel relationship, the interface 30
The reflected light R ₂ of the reflected light R ₁ and the free surface in the four directions are coincident, the interference fringes occur in accordance with the thickness of the second layer.

FIG. 2 is an enlarged view showing a part of a light receiving member in which a light receiving layer having a multi-layered structure is deposited on a support having an uneven shape formed by a plurality of spherical trace dents. In the figure, 20
Reference numeral 1 is a first layer, 202 is a second layer, 203 is a free surface, and 204 is an interface between the first layer and the second layer. Second
As shown in the figure, in the case where the surface of the support is provided with an uneven shape by a plurality of minute spherical trace depressions, the light-receiving layer provided on the support is deposited along the uneven shape, and therefore the first layer Interface 204 between 201 and second layer 202 and free surface 203
Are formed in a concavo-convex shape by spherical trace dents along the concavo-convex shape of the surface of the support. When the curvature radius of the recess sphere-traced are formed at the interface 204 R _1, the curvature radius of the recess sphere-traced are formed on the free surface and R _2, R ₁ and R
_{Since 2} is R ₁ ≠ R ₂ , the reflected light at the interface 204,
The light reflected by the free surface 203 has different reflection angles, that is, θ ₁ and θ ₂ in FIG. ₂ are θ ₁ ≠ θ ₂ and the directions are different, and are shown in FIG. ₁ , ₂ ,
₃ with ₁ + ₂ - for changes not constant also the wavelength shift where represented by _3, occurred is Shiearingu interference corresponding to the so-called Newton ring phenomenon, the interference fringes are dispersed in the recess By the way. As a result, the image displayed through such a light receiving member is
Microscopically, even if interference fringes appear, they are invisible to the eye.

That is, the use of a support having a surface shape that becomes harder means that a light-receiving member having a multi-layered light-receiving layer formed thereon has light passing through the light-receiving layer at the layer interface and the support. It is possible to effectively prevent the formed image from forming a striped pattern due to the reflection on the surface and the interference between them, and to obtain a light receiving member capable of forming an excellent image.

FIG. 4 is an enlarged view of a part of the surface of the support in the light receiving member of the present invention shown in FIG. As shown in FIG. 4, on the surface of the support in the light receiving member of the present invention, fine unevenness or unevenness group 404 is further formed on a part or the whole of the surface in the spherical trace depression 403. When such finer unevenness or unevenness group 404 is provided, in addition to the interference prevention effect described with reference to FIG.
Causes a scattering effect, which more reliably prevents the generation of interference fringe patterns.

By the way, in the prior art, as described above, the surface of the support is randomly roughened to cause irregular reflection, thereby preventing the occurrence of interference fringe patterns. However, in such a case, not only the effect of preventing the occurrence of a sufficient interference fringe pattern cannot be obtained, but also a problem occurs in cleaning after image transfer, for example, when cleaning is performed using a blade.
That is, the surface of the light-receiving layer has irregularities along the irregularities provided on the support, so that the blade mainly hits the convex portions of the irregularities of the light-receiving layer, the cleaning property is poor, and
The protrusions of the light-receiving layer and the blade surface are greatly worn, resulting in poor durability of the two and a problem.

On the other hand, in the light receiving member of the present invention, since the minute irregularities that cause the scattering effect are present in the spherical trace depressions (recesses), the blade is said to contact the recesses of the light receiving layer during cleaning. It also has the advantage that a large load is not applied to the blade or the surface of the light receiving layer.

By the way, the radius of curvature and width of the concavo-convex shape due to the spherical trace depressions provided on the surface of the support of the light receiving member of the present invention, and the height of the finer irregularities in the spherical trace depressions are such light receiving members of the present invention. It is important to efficiently obtain the effect of preventing the occurrence of interference fringes in the. The present inventors have made the following discoveries as a result of various experiments.

That is, when the radius of curvature of the uneven shape due to the spherical trace depression is R and the width is D, the following formula: If the above condition is satisfied, there are 0.5 or more Newton rings due to shear ring interference in each of the dents. Furthermore, the following formula: If the above condition is satisfied, there will be one or more Newton rings due to shear ring interference in each of the dent depressions.

From this, the interference fringes generated in the entire light receiving member, dispersed in each trace depression, in order to prevent the occurrence of interference fringes in the light receiving member, the D / R 0.035,
It is preferably 0.055 or more.

The upper limit of D / R is preferably 0.5. This is because, if D / R is larger than 0.5, the width D of the depression becomes relatively large, which easily causes image unevenness.

In addition, the width D of the unevenness due to the trace depression is 500 μ at the maximum.
m, preferably less than 200 μm, more preferably 100 μm
It is desirable that the thickness is m or less. When D exceeds 500 μm,
Image unevenness is likely to occur, and the resolution may be exceeded. In such a case, it is difficult to obtain an efficient interference fringe prevention effect.

The height of the minute irregularities formed in the spherical trace dents, that is, the surface roughness γmax in the spherical trace dents, is preferably in the range of 0.5 to 20 μm. When γmax is 0.5 μm or less, the scattering effect is not sufficiently obtained, and when it exceeds 20 μm, the minute irregularities in the spherical trace pit become too large as compared with the irregularities due to the spherical trace pit, and the trace pit Does not have a spherical shape, and the effect of preventing the occurrence of interference fringe patterns cannot be sufficiently obtained. In addition, the non-uniformity of the light-receiving layer provided on such a support is increased, and image defects are likely to occur, which is not preferable.

The light-receiving layer formed on the support having a specific surface shape as described above contains a silicon atom and at least one selected from oxygen atom, carbon atom and nitrogen atom, and more preferably hydrogen. An amorphous material containing at least one of an atom and a halogen atom [hereinafter referred to as "a-Si (O, C, N) (H, N)". ], And may further contain a substance that controls conductivity, if necessary. The light-receiving layer has a multilayer structure, and particularly preferably has a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers and / or a barrier layer. It is desirable to have it as one of the layers, and the light receiving member of the present invention having such a constitution will have a plurality of interfaces formed by a plurality of layers on the support.

Regarding the preparation of the light-receiving layer of the light-receiving member of the present invention, it is necessary to accurately control the layer thickness at the optical level in order to efficiently achieve the above-mentioned object of the present invention. Vacuum deposition methods such as the sputtering method, the sputtering method, and the ion plating method are usually used.
A CVD method, a thermal CVD method or the like can also be adopted.

The specific contents of the light receiving member of the present invention will be described below with reference to the illustrated embodiments, but the light receiving member of the present invention is not limited to these embodiments.

FIG. 1 is a diagram schematically showing the layer structure of the light receiving member of the present invention, in which 100 is a light receiving member, 1
01 is the support, 102 'is the first layer, 102 "is the second layer, 103
Indicates a free surface.

Support 101 in the light receiving member of the present invention, the surface thereof has fine unevenness smaller than the resolution required for the light receiving member, and the unevenness is due to a plurality of spherical trace depressions, and Further, a plurality of minute irregularities are formed in the spherical trace depression.

Hereinafter, the shape of the surface of the support in the light receiving member of the present invention and a preferred production example thereof will be described with reference to FIGS. 4 and 5, but the surface shape of the support in the light receiving member of the present invention and the method for producing the same. Are not limited by these.

FIG. 4 schematically shows a typical example of the shape of the surface of the support in the light receiving member of the present invention by partially enlarging a part of the uneven shape.

In FIG. 4, 401 is a support, 402 is the surface of the support, 403 is a concavo-convex shape due to the spherical trace depression, and 404 is a finer concavo-convex shape provided in the spherical trace depression.

Further, FIG. 4 also shows one example of a preferable manufacturing method for obtaining the surface shape of the support, and 403 'shows a rigid sphere having fine irregularities 404' on the surface. By causing the rigid sphere 403 'to naturally fall from a position of a predetermined height above the support surface 402 and colliding with the support surface 402,
It shows that the uneven shape 403 can be formed by a spherical trace depression having a minute uneven shape 404 in the depression. Then, by using a plurality of rigid spheres 403 'having substantially the same diameter R'and dropping them from the same height h at the same time or at a time, the support surface 402 has substantially the same radius R of curvature.
And a plurality of spherical trace indentations 403 having approximately the same width D can be formed.

FIG. 5 shows some typical examples of the support body on the surface of which the uneven shape is formed by a plurality of spherical trace depressions as described above. In the figure, 501 is a support, 502
Is a surface of the support, and 503 is a spherical trace dent having a plurality of finer concave-convex shapes in the depression (note that in FIG. 5, a plurality of finer concave-convex shapes formed in the spherical trace pits are illustrated. Although not present, it is assumed that each of the spherical trace dents 503 has a further minute uneven shape.), 503 'is a rigid sphere having a minute uneven shape on the surface (similarly, a minute uneven surface Although the shape is not shown, it is assumed that the surface of the hard sphere has minute irregularities.).

In the example shown in FIG. 5 (A), a plurality of spheres 503 ', 503', ... Of almost the same diameter are dropped regularly from almost the same height on different parts of the surface 502 of the support 501 to make them almost uniform. A plurality of trace dents 503, 503, ... Having the same radius of curvature and substantially the same width are densely formed so as to overlap each other, and irregularities are regularly formed. In this case, in order to form the recesses 503, 503, ... Which overlap with each other, the spheres 5 ′ are arranged so that the collision timings of the spheres 503 ′ with the support surface 502 deviate from each other.
Needless to say, it is necessary to let 03 ', 503', ... fall naturally.

Further, in the example shown in FIG. 5 (B), two types of spheres 503 ′, 503 ′, ... Having different diameters are dropped from substantially the same height or different heights, and the spheres 502 of the support 501 are brought to the surface 502. , A plurality of depressions 503, 503, ... Having two kinds of radiuses of curvature and two kinds of widths are densely formed so as to overlap each other to form unevenness having irregular surface heights.

Furthermore, FIG. 5 (c) (front view and sectional view of the surface of the support)
In the example shown in FIG. 3, a plurality of spheres 503 ′, 503 ′, ... Of substantially the same diameter are dropped on the surface 502 of the support 501 irregularly from substantially the same height, and substantially the same radius of curvature and plural types of widths are provided. , Are formed so as to overlap each other to form irregular irregularities.

As described above, on the surface of the support of the light-receiving member of the present invention, the uneven shape due to the spherical trace dents is formed, and further, the fine unevenness is formed in the spherical trace dents. A preferable example is a method of dropping a rigid sphere having a minute uneven shape on the surface of a support. In this case, the diameter of the rigid sphere, the height of the drop, the hardness of the rigid sphere and the surface of the support, and the hardness of the rigid sphere. By appropriately selecting various conditions such as the shape and size of the surface irregularities, or the amount of rigid spheres that can be dropped, a spherical trace dent having a desired average curvature radius and average width on the support surface, or the spherical trace dent Irregularities having a desired size and shape can be formed therein with a predetermined density. That is, by selecting the above-mentioned conditions, the height of the unevenness and the pitch of the unevenness formed on the surface of the support, or the height and the unevenness of the finer unevenness formed in the recess of the unevenness. It is possible to freely adjust the pitch etc. according to the purpose,
It is possible to obtain a support having a desired uneven shape.

Then, regarding the support of the light receiving member to the surface of the uneven shape, a method of cutting and creating with a diamond tool using a lathe, a milling machine, etc. has been proposed and is an effective method as such, In this method, it is indispensable to use cutting oil, remove chips that are inevitably generated by cutting, and remove cutting oil that remains on the cutting surface, and in the end, processing is complicated and efficient. In the present invention, since the uneven surface shape of the support is formed by the spherical trace depressions as described above, the above problem is completely eliminated and a desired uneven surface support is obtained. It can be created efficiently and easily.

The support 101 used in the present invention may be either conductive or electrically insulating. As the conductive support, for example, NiCr, stainless steel, A, Cr, M
Examples thereof include metals such as o, Au, Nb, Ta, V, Ti, Pt, and Pb, or alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resin such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene and polyamide, glass, ceramics, paper and the like. It is preferable that at least one surface of these electrically insulating supports is subjected to a conductive treatment, and a light receiving layer is provided on the surface side subjected to the conductive treatment.

For example, glass is NiCr, A, C on the surface.
r, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In ₂ O ₃ , S
Conductivity is imparted by providing a thin film made of nO ₂ , ITO (In ₂ O ₃ + SnO ₂ ) or the like, or NiCr, A, Ag, in the case of a synthetic resin film such as a polyester film.
A thin film of a metal such as Pb, Zn, Ni, Au, Cr, Mo, Ir, Nb, Ta, V, T, Pt is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is formed by the metal. Is laminated to give conductivity to the surface. The shape of the support may be any shape such as a cylindrical shape, a belt shape, and a plate shape, but the shape can be appropriately determined depending on the application and the desire. For example, when the light receiving member 100 shown in FIG. 1 is used as an image forming member for electrophotography, it is desirable to have an endless belt shape or a cylindrical shape for continuous high speed copying. The thickness of the support is appropriately determined so that a desired light-receiving member can be formed, but when flexibility is required as the light-receiving member, a range in which the function as the support is sufficiently exhibited It can be made as thin as possible. However, in terms of mechanical strength and the like in terms of manufacturing and handling of the support, it is usually 10 μm or more.

Next, when the light receiving member of the present invention is used as a light receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be described with reference to FIGS. 6 (A) and 6 (B). As will be described, the invention is not so limited.

As a support for the light-receiving member for electrophotography, aluminum alloy or the like is subjected to ordinary extrusion processing to form a boathole tube or a mandrel tube, and a drawn tube obtained by further drawing is subjected to heat treatment or adjustment as necessary. A cylindrical (cylindrical) substrate that has been subjected to a treatment such as quality is used.
An uneven shape is formed on the surface of the support using the manufacturing apparatus shown in FIGS.

Examples of spheres used for forming the above-mentioned uneven shape on the surface of the support include metal such as stainless steel, aluminum, steel, nickel and brass, and various hard spheres such as ceramics and plastics. For reasons of cost reduction, stainless steel and steel rigid spheres are preferable. The hardness of such a hard sphere may be higher or lower than the hardness of the support, but when the sphere is repeatedly used, it is desirable that it is higher than the hardness of the support.

In order to form the specific shape as described above on the surface of the support of the present invention, it is necessary to use those having irregularities on the surface of various rigid spheres as described above, and a rigid sphere having irregularities on such a surface is, for example, Methods that apply plastic processing such as embossing and corrugation, roughening methods such as surface roughening (satin finish), methods that form irregularities by mechanical treatment, chemical methods such as etching treatment with acid or alkali It can be manufactured by treating a hard sphere by using a method of forming irregularities. In addition, electrolytic polishing, chemical polishing, finish polishing, etc., or anodic oxide film formation, chemical conversion film formation, plating, enameling, painting, vapor deposition film formation, film formation by the CVD method on the surface of a hard sphere on which irregularities are formed It is possible to appropriately adjust the uneven shape (height), hardness, etc. by performing surface treatment such as.

6 (A) and 6 (B) are schematic cross-sectional views for explaining an example of the manufacturing apparatus.

In the figure, 601 is an aluminum cylinder for making a support, and the surface of the cylinder 601 may be finished to an appropriate smoothness in advance. The cylinder 601 has a rotating shaft 602.
Is rotatably supported around the shaft and is driven by an appropriate driving means 603 such as a motor so as to be rotatable about an axis.
604 is a rotating container that is supported by a bearing 602 and rotates in the same direction as the cylinder 601. Inside the container 604,
A large number of hard spheres 605 having an uneven surface are housed. The rigid sphere 605 is carried by a plurality of protruding ribs 606 provided on the inner wall of the rotary container 604, and is transported to the upper part of the container by the rotation of the rotary container 604. When the rotating speed of the rotating container is a certain speed, the rigid sphere 605 transported to the upper part of the container with respect to the container wall is
It drops toward 01 and collides with the cylinder surface, forming a trace dent on the surface.

It should be noted that holes can be evenly formed in the wall of the rotary container 604, and a cleaning liquid can be sprayed from a shower tube 607 provided outside the container 604 at the time of rotation to clean the cylinder 601, the rigid sphere 605, and the rotary container 604. You can do the same. In this case, dust and the like attached due to static electricity caused by contact between the hard spheres or between the hard sphere and the rotating container,
By washing out to the outside of the rotary container 604, it is possible to form a desired support body free of dust and the like. As the cleaning liquid, it is necessary to use a cleaning liquid free from unevenness in drying and dripping, and for this reason, it is preferable to use a non-volatile substance alone or a mixture with a cleaning liquid such as trichloroethane or trichlorethylene.

Photoreceptive Layer In the photoreceptive member 100 of the present invention, the photoreceptive layer 102 is provided on the support 101 described above.
Is composed of a-Si (O, C, N) (H, X), and may contain a conductive material as required. The light-receiving layer 102 of the light-receiving member of the present invention has a multi-layer structure. For example, in the example shown in FIG. 1, it is composed of a first layer 102 ′ and a second layer 102 ″, It has a free surface 103 on the side of the photoreceptor layer opposite the support side.

As the halogen atom (X) to be contained in the light receiving layer,
Specific examples thereof include fluorine, chlorine, bromine and iodine, and particularly preferable examples include fluorine and chlorine. The amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the sum of the amounts of hydrogen atoms and halogen atoms (H + X) contained in the light receiving layer 102 is usually 1 to 40 atomic%, preferably Is preferably 5 to 30 atomic%.

Further, in the light receiving member of the present invention, the layer thickness of the light receiving layer is one of the important factors for efficiently achieving the object of the present invention, and the desired property is given to the light receiving member. As described above, it is necessary to pay sufficient attention when designing the light receiving member, and usually 1 to 100 μm, but preferably 1 to 80 μm.
μ, and more preferably 2 to 50 μ.

By the way, the purpose of incorporating at least one selected from oxygen atom, carbon atom and nitrogen atom in the light-receiving layer of the light-receiving member of the present invention is mainly to increase the photosensitivity and the dark resistance of the light-receiving member. And to improve the adhesion between the support and the light-receiving layer.

In the light-receiving layer of the present invention, when at least one selected from oxygen atom, carbon atom and nitrogen atom is contained, it is contained in a uniform distribution state in the layer thickness direction or is non-uniform in the layer thickness direction. Whether to be contained in such a distributed state depends on the above-mentioned purpose or expected effect, and accordingly, the amount to be contained also differs.

That is, in the case of aiming at high photosensitivity and high dark resistance of the light receiving member, it is contained in a uniform distribution state in the entire layer region of the light receiving layer, in this case, carbon atoms contained in the light receiving layer, The amount of at least one selected from oxygen atoms and nitrogen atoms may be relatively small.

Further, when the purpose is to improve the adhesiveness between the support and the light-receiving layer, it is uniformly contained in a part of the layer region of the end of the light-receiving layer on the support side, or the light-receiving layer is supported. At the end on the body side, at least one selected from carbon atom, oxygen atom and nitrogen atom is contained in a distributed state such that the distribution concentration becomes high. In this case, oxygen atom, carbon atom and nitrogen contained in the light receiving layer are contained. The amount of at least one selected from the atoms is made relatively large in order to ensure the improvement of the adhesion with the support.

In the light receiving member of the present invention, the amount of at least one selected from oxygen atom, carbon atom and nitrogen atom contained in the light receiving layer is not limited to the above-mentioned properties required for the light receiving layer. It is determined in consideration of organic relevance such as characteristics at the contact interface with the support, usually 0.001 to 50 atomic%, preferably 0.002 to 40 atomic%, optimally 0.003 to 30 atomic% To do. By the way, whether it is contained in the entire layer area of the light receiving layer,
Alternatively, when the proportion of the layer thickness of a part of the layer region to be contained in the layer thickness of the light-receiving layer is large, the upper limit of the amount to be contained is reduced. That is, in that case, for example, in the case where the layer thickness of the layer region to be contained is 2/5 of the layer thickness of the light-receiving layer, the contained amount is usually 30 atomic% or less, preferably 20 atomic% or less, optimal. Is less than 10 atomic%.

Next, the amount of at least one selected from oxygen atoms, carbon atoms and nitrogen atoms contained in the light-receiving layer of the present invention is relatively large on the support side, and the amount of at least one from the end on the support side to the free surface side. Some of the typical cases of decreasing toward the edge and distributing relatively small amount near the edge of the light receiving layer on the free surface side, or substantially zero. Will be described with reference to FIGS. 7 to 15. However, the invention is not limited by these examples. Hereinafter, at least one selected from carbon atom, oxygen atom and nitrogen atom will be referred to as “atom (O, C, N)”.

7 to 15, the horizontal axis represents the distribution concentration C of atoms (O, C, N), the vertical axis represents the layer thickness of the light receiving layer, and t _B represents the interface position between the support and the light receiving layer. , _{T T} indicate the position of the free surface of the photoreceptor layer.

FIG. 7 shows a first typical example of the distribution state of atoms (O, C, N) contained in the light-receiving layer in the layer thickness direction. In this example, the distribution concentration C of atoms (O, C, N) is C ₁ from the interface position t _B between the photoreceptive layer containing the atoms (O, C, N) and the support to the position t _1. takes a constant value, the position t _T to the atoms of the free surface from the position _{t 1 (O, C, N} ) distribution concentration C of continuously decreases from the concentration C _2, atoms in position t _T (O,
The distribution concentration of (C, N) is C ₃ .

In another typical example shown in FIG. 8, the distribution concentration C of atoms (O, C, N) contained in the light-receiving layer is continuous from the concentration C ₄ from the position t _B to the position t _T. To the concentration C ₅ at the position t _T.

In the example shown in FIG. 9, from the position t _B to the position t ₂ , the distribution concentration C of atoms (O, C, N) maintains a constant value of the concentration C ₆ ,
Atoms (O, C, N) from position t ₂ to position t _T
The distribution concentration C of A gradually decreases continuously from the concentration C ₇ , and the distribution concentration C of atoms (O, C, N) becomes substantially zero at the position t _T.

In the example shown in FIG. 10, the distribution concentration C of atoms (O, C, N) gradually decreases from the concentration C ₈ continuously from the position t _B to the position t _T, and at the position t _T , the atomic concentration is continuously reduced. The distribution concentration C of (O, C, N) becomes substantially zero.

In the example shown in FIG. 11, the distribution concentration C of atoms (O, C, N) is
The density C ₉ is constant between the position t _B and the position t ₃ , and the density C ₉ is constant between the position t ₃ and the position t _T.
It decreases linearly from ₉ to the concentration C ₁₀ .

In the example shown in FIG. 12, the distribution concentration C of atoms (O, C, N) is
The density C _{11 is} a constant value from the position t _B to the position t ₄ , and the density C ₁₂ is from the position t ₄ to the position t _T.
To a concentration C ₁₃ decreases linearly.

In the example shown in FIG. 13, the distribution concentration C of atoms (O, C, N) decreases linearly from the position t _B to the position t _T, and from the concentration C ₁₄ to substantially zero. To do.

In the example shown in FIG. 14, the distribution concentration C of atoms (O, C, N) is
From the position t _B to the position t ₅ , the density C ₁₅ to the density C
It decreases linearly until it reaches _16, and from position t ₅ to position t
Until _T , the density C ₁₆ is kept constant.

Finally, in the example shown in FIG. 15, the distribution concentration C of the atoms (O, C, N) is the concentration C ₁₇ at position t _B, from the position t _B to the position t _6, starting from the concentration C ₁₇ Is gradually reduced, and rapidly decreases near the position t ₆ , and the concentration becomes C ₁₈ at the position t. Next, from the position t ₆ to the position t ₇ , there is a rapid decrease at the beginning and a gradual decrease thereafter.
The density becomes C _{19 at the} position t ₇ . Further, between the position t ₇ and the position t ₈ , it is extremely slow and gradually decreases, and the position t
_{At 8} , the concentration becomes C ₂₀ . Furthermore, from the position t ₈ to the position t _T , the concentration C ₂₀ gradually decreases until it becomes substantially zero.

As in the example shown in FIGS. 7 to 15, a portion having a high concentration concentration C of atoms (O, C, N) is provided at the end of the photoreceptor layer on the side of the support, and the free surface of the first layer is formed. At the end on the side of the photoreceptive layer, there is a portion where the distribution concentration C is considerably low, or when there is a portion where the concentration C is substantially close to zero, the atom (O , C, N) is provided in a localized region having a relatively high concentration, and the localized region is preferably 5 μm from the interface position t _B between the support surface and the light receiving layer.
By providing it within the range, the improvement of the adhesiveness between the support and the light receiving layer can be achieved more efficiently.

The localized region may be the whole or a part of the partial layer region of the end of the photoreceptor layer containing the atoms (O, C, N) on the support side, whichever is used. This is appropriately determined according to the characteristics required of the formed light receiving layer.

The amount of atoms (O, C, N) contained in the localized region is such that the maximum value of the molecular concentration C of atoms (O, C, N) is 500 atomic ppm or more,
Preferably 800 atomic ppm or higher, optimally 1000 atomic pm
It is desirable that the distribution state be m or more.

In the light receiving member of the present invention, the material for controlling the conductivity can be contained in the light receiving layer in the entire layer region or a part of the layer region in a uniform or non-uniform distribution state.

Examples of the substance that controls the conductivity include so-called impurities in the field of semiconductors, and an atom belonging to Group III of the periodic table that gives P-type conductivity (hereinafter simply referred to as “I
Group II atom ”. ), Or an atom belonging to Group V of the periodic table that gives n-type conductivity (hereinafter simply referred to as “Group V atom”). Specific examples of the Group III atom include B (boron), A (aluminum), Ga (gallium), In (indium), T (thallium), and the like. , Ga. Further, as the group V atom, P (phosphorus), As (arsenic), Sb (antimony), Bi (bisman) and the like can be mentioned, but particularly preferable ones are P and Sb.

The light-receiving layer of the present invention, which is a substance for controlling conductivity, III
When a group atom or a group V atom is contained, whether it is contained in the whole layer region or a part of the layer region is different depending on the intended place or expected action and effect as described later, The amount to be contained also differs.

That is, when the main purpose is to control the conductivity type or / and the conductivity of the amount of received light, it is contained in the entire layer region of the light receiving layer. In this case, a group III atom or a group V atom is contained. The content of may be relatively small, usually 1 × 10 ^-3 ~
1 × 10 ³ atomic ppm, preferably 5 × 10 ^{−2 to} 5 × 1
0 ² atomic ppm, optimally 1 × 10 ^-1 to 2 × 10 ² atomic ppm
Is.

Further, a group III atom or a group V atom is contained in a uniform distribution state in a part of the layer region in contact with the support, or the distribution concentration of the group III atom or the group V atom in the layer thickness direction is In the case where it is contained so that the concentration is high on the side in contact with the support, such Group III atoms or V
A partial layer region containing a group atom or a region containing a high concentration serves as a charge injection blocking layer. That is, when the group III atom is contained, the movement of electrons injected from the support side into the light-receiving layer is more efficiently performed when the free surface of the light-receiving layer is subjected to a polar charging treatment. When the free surface of the photoreceptive layer is subjected to a polar electrification treatment, holes injected from the support side into the photoreceptive layer can be blocked. Can be prevented more efficiently. And
The content in this case is relatively large. Specifically, it is generally 30 to 5 × 10 ⁴ atomic ppm, but preferably 5
0 to 1 × 10 ⁴ atomic ppm, optimally 1 × 10 ^{2 to} 5 × 10 ³ atom
ic ppm. In order to efficiently exhibit the effect, when the layer thickness of a part of the layer region or the layer region containing a high concentration is t and the layer thickness of the other light receiving layer is t ₀ , t is It is desirable that the relational expression of / t + t ₀ ≦ 0.4 is satisfied, and more preferably, the value of the relational expression is 0.35 or less, optimally
It is desirable to set it to 0.3 or less. The layer thickness of the layer region is generally 3 × 10 ^{−3 to} 10 μ, but is preferably 4 × 10 ^{−3 to} 8 μ, and most preferably 5 × 10 ^{−3 to} 5 μ.

Next, the amount of the group III atom or the group V atom contained in the light receiving layer is relatively large on the support side and decreases from the support side to the free surface side, and the end portion on the free surface side is reduced. A typical example of the case where the group III atom or the group V atom is distributed in a relatively small amount or close to zero in the vicinity is an oxygen atom or a carbon atom in the above-mentioned photoreceptive layer. And an example similar to the example of FIG. 7 to FIG. 15, which is illustrated when containing at least one selected from nitrogen atoms. But,
The invention is not limited by these examples.

Then, as in the examples shown in FIGS. 7 to 15, the portion of the light-receiving layer near the support side has a portion having a high concentration concentration C of group III atoms or group V atoms, and the free surface of the light-receiving layer is On the side, in the case where the distribution concentration C has a considerably low concentration portion or a concentration portion substantially close to zero, the distribution concentration of the group III atom or the group V atom is closer to the support side. By providing a localized region having a relatively high concentration, preferably by providing the localized region within 5 μm from the interface position in contact with the surface of the support, the distribution concentration of the group III atom or the group V atom can be increased. The above-described effect that the layer region having a high concentration forms the charge injection blocking layer is more efficiently exhibited.

As described above, the action and effect of each of the distribution states of the group III atoms or the group V atoms have been described individually. For obtaining the light receiving member having the characteristics capable of achieving the desired purpose,
It goes without saying that the distribution state of these Group III atoms or Group V atoms and the amount of Group III atoms or Group V atoms to be contained in the light-receiving layer are appropriately combined as necessary. Nor. For example, when a charge injection blocking layer is provided at the end of the light receiving layer on the side of the support, the polarity of the substance that controls the conductivity contained in the charge injection blocking layer in the light receiving layer other than the charge injection blocking layer is May contain a substance that controls conductivity of another polarity, or may contain a substance that controls conductivity of the same polarity in an amount much smaller than the amount contained in the charge blocking layer. Good.

Furthermore, in the light receiving member of the present invention, as the constituent layer provided at the end portion on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material may be provided, or both the barrier layer and the charge injection blocking layer may be constituent layers. Examples of the material forming the barrier layer include inorganic electrically insulating materials such as A ₂ O ₃ , SiO ₂ , and Si ₃ N _4, and organic electrically insulating materials such as polycarbonate.

Since the light-receiving member of the present invention has the above-mentioned layer structure, it can solve all of the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon as described above. Even when a monochromatic laser beam is used as a light source, the appearance of an interference fringe pattern in a formed image due to an interference phenomenon can be significantly prevented, and an extremely high-quality visible image can be formed.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

Next, a method for forming the light receiving layer of the present invention will be described.

Any of the amorphous materials forming the light receiving layer of the present invention is formed by a vacuum deposition method utilizing a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion plating method. These manufacturing methods are appropriately selected and adopted depending on factors such as the manufacturing conditions, the load level of capital investment, the manufacturing scale, and the desired characteristics of the light receiving member to be manufactured. Since it is relatively easy to control the conditions for producing the light receiving member having, and the carbon atom and the hydrogen atom can be easily introduced together with the silicon atom, the glow discharge method or the sputtering method is used. It is suitable. Then, the glow discharge method and the sputtering method may be used together in the same apparatus system.

For example, in order to form a layer composed of a-Si (H, X) by the glow discharge method, basically, silicon atoms (Si) are used.
Hydrogen gas (H) together with the source gas for Si supply that can supply
A raw material gas for introducing and / or introducing a halogen atom (X) is introduced into a deposition chamber whose inside can be decompressed to cause glow discharge in the deposition chamber, and a predetermined support installed in advance at a predetermined position. A layer of a-Si (H, X) is formed on the surface.

The raw material gas for supplying Si includes SiH ₄ , Si ₂ H ₆ , and Si.
Examples thereof include silicon hydrides (silanes) in a gas state such as ₃ H ₈ and Si ₄ H ₁₀ , which can be gasified. In particular, in terms of ease of layer formation work, good Si supply efficiency, etc., SiH ₄ , Si ₂ H ₆ are preferred.

Further, as the source gas for introducing the halogen atom, many halogen compounds can be mentioned, for example, a halogen gas,
Gaseous or gasifiable halogen compounds such as halides, interhalogen compounds, silane derivatives substituted with halogen are preferred. Specifically, fluorine, chlorine, bromine,
Halogen gas of iodine, BrF, CF, CF ₃ , Br
Interhalogen compounds such as F ₅ , BrF ₃ , IF ₇ , IC, IBr,
And silicon halides such as SiF ₄ , Si ₂ F ₆ , SiC ₄ , SiBr _{4 and the} like. When using a silicon halide in the gas state or gasifiable as described above, Si
It is particularly effective because a layer composed of a-Si containing a halogen atom can be formed without separately using a raw material gas for supply.

The raw material gas for supplying the hydrogen atoms includes hydrogen gas, halides such as HF, HC, HBr, and HI, SiH ₄ , Si ₂
Silicon hydride such as H ₆ , Si ₃ H ₈ and Si ₄ H ₁₀ , or Si
_{H 2 F 2, SiH 2 I} 2, SiH 2 C 2, SiHC 3, SiH 2 Br
₂ , halogen-substituted silicon hydride such as SiHBr ₃ or the like, which can be used in a gas state or can be gasified, can be used. When these raw material gases are used, it is extremely difficult to control electrical or photoelectric characteristics. Hydrogen atom where it is effective
This is effective because the content of (H) can be easily controlled. When the hydrogen halide or the halogen-substituted silicon hydride is used, a hydrogen atom (H) is also introduced at the same time as the introduction of the halogen atom, which is particularly effective.

The amount of hydrogen atoms (H) and / or halogen atoms (X) contained in the a-Si layer can be controlled by, for example, the support temperature,
This is performed by controlling the amount of the starting material used to introduce the hydrogen atom (H) and / or the halogen atom (X) into the deposition chamber, the discharge power, and the like.

In order to form a layer of a-Si (H, X) by the reaction sputtering method or the ion plating method, for example, in the case of the sputtering method, for introducing a halogen atom, the above halogen compound or the above is used. The silicon compound gas containing the halogen atom may be introduced into the deposition chamber to form a plasma atmosphere of the gas.

When hydrogen atoms are introduced, a source gas for introducing hydrogen atoms, for example, H ₂ or a gas such as the above-mentioned silanes may be introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gas. Good.

For example, in the case of the reaction sputtering method, a Si target is used and a gas for introducing a halogen atom and H ₂ gas are introduced into the deposition chamber together with an inert gas such as He and Ar as needed, and a plasma atmosphere is introduced. Is formed and the Si target is sputtered to form a-Si on the support.
A layer composed of (H, X) is formed.

Amorphous crystal in which a-Si (H, X) further contains a group III atom or a group V atom, a nitrogen atom, an oxygen atom or a carbon atom by using a glow discharge method, a sputtering method, or an ion plating method. In order to form a layer composed of a high-quality material, a starting material for introducing a group III atom or a group V atom and a starting material for introducing a nitrogen atom at the time of forming the layer of a-Si (H, X). Materials, starting materials for introducing oxygen atoms, or starting materials for introducing carbon atoms together with the starting materials for forming a-Si (H, X) described above, and their amounts in the layer to be formed It is carried out by containing it while controlling it.

For example, to form a layer or layer region composed of a-Si (H, X) containing a group III atom or a group V atom by using a glow discharge method, a sputtering method or an ion plating method. In forming the layer composed of a-Si (H, X) described above, a starting material for introducing a Group III atom or a Group V atom is used as a starting material for forming a-Si (H, X). It is used in conjunction with materials to control their inclusion in the layers formed.

Specifically, as a starting material for introducing a group III atom, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B
_{5 H 11, B 6 H 10} , B 6 H 12, B 10 H 14 borohydride such as, BF _3, BC _3, BBr boron halides such as _3. In addition, AC ₃ , GaC ₃ , Ga (C
_{H 3) 3, InC 3,} TC 3 etc. can also be mentioned.

As a starting material for introducing a Group V atom, specifically, for introducing a phosphorus atom, phosphorus hydride such as PH ₃ , P ₂ H ₄ or the like, PH ₄ I,
Examples thereof include phosphorus halides such as PF ₃ , PF ₅ , PC ₃ , PC ₅ , PBr ₃ , PBr ₅ , and PI ₃ . In addition, AsH ₃ , AsF ₃ , As
_{C 3, AsBr 3, AsF 5} , SbH 3, SbF 3, SbF 5, SbC
₃ , SbC ₅ , BiH ₃ , BiC ₅ , BiBr _{3 and the} like can also be mentioned as effective starting materials for introducing a Group V atom.

When the glow discharge method is used to form a layer or layer region containing an oxygen atom, one selected from the above-mentioned starting materials for forming the light-receiving layer as desired for introducing an oxygen atom. Starting material is added. As such a starting material for introducing an oxygen atom, almost any material can be used as long as it is a gaseous substance containing at least an oxygen atom as a constituent atom or a gasifiable substance.

For example, a source gas containing silicon atoms (Si) as constituent atoms,
A raw material gas containing oxygen atoms (O) as constituent atoms and a raw material gas containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms, if necessary, are mixed at a desired mixing ratio and used. Or
Alternatively, a source gas containing silicon atoms (Si) as constituent atoms,
A raw material gas containing oxygen atoms (O) and hydrogen atoms (H) as constituent atoms is also mixed at a desired mixing ratio, or a raw material gas containing silicon atoms (Si) as constituent atoms and silicon. It is possible to mix and use a raw material gas containing three atoms (Si), oxygen atoms (O) and hydrogen atoms (H) as constituent atoms.

Alternatively, a raw material gas containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing oxygen atoms (O) as constituent atoms.

Specifically, for example, oxygen (O ₂ ), ozone (O ₃ ), nitric oxide
(NO), nitrogen dioxide (NO ₂ ), nitrogen monoxide (N ₂ O), nitrogen trioxide (N ₂ O ₃ ), nitrogen tetraoxide (N ₂ O ₄ ), nitrogen pentaoxide (N
₂ O ₅ ), nitric oxide (NO ₃ ), silicon atom (Si) and oxygen atom
Examples thereof include lower siloxanes having (O) and a hydrogen atom (H) as constituent atoms such as disiloxane (H ₃ SiOSiH ₃ ) and trisiloxane (H ₃ SiOSiH ₂ OSiH ₃ ).

In order to form a layer or layer region containing oxygen atoms by the sputtering method, a single crystal or polycrystalline Si wafer or SiO ₂ wafer, or a wafer containing Si and SiO ₂ mixed therein is targeted. As described above, these may be sputtered in various gas atmospheres.

For example, if you use a Si wafer as a target,
A raw material gas for introducing an oxygen atom and, if necessary, a hydrogen atom and / or a halogen atom, is diluted with a diluting gas as needed, and then introduced into a deposition chamber for a sputter, and a gas for these gases is introduced. Gas plasma may be formed and the Si wafer may be sputtered.

Alternatively, Si and SiO ₂ are used as separate targets, or by using a single target of Si and SiO ₂ mixed, in a diluting gas atmosphere as a gas for a sputter or at least It can be formed by sputtering in a gas atmosphere containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms. As the raw material gas for introducing oxygen atoms, the raw material gas for introducing oxygen atoms among the raw material gases shown in the example of glow discharge described above can be used as an effective gas in the case of sputtering.

When the glow discharge method is used to form a layer or layer region containing a nitrogen atom, a starting material for forming the light-receiving layer may be selected as desired from among the above-mentioned starting materials for forming the light-receiving layer. Add starting material. As such a starting material for introducing a nitrogen atom, almost any material can be used as long as it is a gaseous substance containing at least a nitrogen atom as a constituent atom or a substance that can be gasified.

For example, a source gas containing silicon atoms (Si) as constituent atoms,
A raw material gas containing nitrogen gas (N) as a constituent atom and, if necessary, a raw material gas containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms are mixed at a desired mixing ratio and used. Or
Alternatively, a source gas containing silicon atoms (Si) as constituent atoms,
A raw material gas containing nitrogen atoms (N) and hydrogen atoms (H) as constituent atoms can also be mixed or used at a desired mixing ratio.

Alternatively, a raw material gas containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing nitrogen atoms (N) as constituent atoms.

A starting material effectively used as a raw material gas for introducing a nitrogen atom (N) used when forming a layer or a layer region containing a nitrogen atom has N as a constituent atom or N and H as a constituent gas. Atoms such as nitrogen (N ₂ ), ammonia (NH ₃ ),
Gaseous or gasifiable nitrogen such as hydrazine (H ₂ NNH ₂ ), hydrogen azide (HN ₃ ), ammonium azide (NH ₄ N ₃ ), nitrogen compounds such as nitrides and azides can be mentioned. . In addition to this, in addition to introducing a nitrogen atom (N), a halogen atom (X) can also be introduced.
Examples thereof include halogenated nitrogen compounds such as ₃ N) and nitrogen tetrafluoride (F ₄ N ₂ ).

According to the sputtering method, in order to form a layer or layer region containing a nitrogen atom, a single crystal or polycrystalline Si wafer or Si ₃ N ₄ wafer, or a mixture of Si and Si ₃ N ₄ is contained. This may be carried out by using the existing wafer as a target and sputtering them in various gas atmospheres.

For example, if you use a Si wafer as a target,
A raw material gas for introducing a nitrogen atom and, if necessary, a hydrogen atom and / or a halogen atom is diluted with a diluting gas, if necessary, and then introduced into a deposition chamber for a sputter, and gas of these gases is introduced. Plasma may be formed and the Si wafer may be sputtered.

Separately, Si and Si ₃ N ₄ are used as separate targets.
Alternatively, by using a single target in which Si and Si ₃ N ₄ are mixed, at least a hydrogen atom (H) or / and a halogen atom (X) is contained in an atmosphere of a diluting gas as a gas for a sputter. It can be formed by sputtering in a gas atmosphere containing the constituent atoms. As the raw material gas for introducing nitrogen atoms, the raw material gas for introducing nitrogen atoms among the raw material gases shown in the example of glow discharge described above can be used as an effective gas even in the case of sputtering.

Further, for example, in order to form an a-Si (H, X) layer containing carbon atoms by a glow discharge method, a source gas containing silicon atoms (Si) as constituent atoms and a carbon atom (C) as constituent atoms. Or a raw material gas containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms at a desired mixing ratio, or a silicon atom (Si) is used. A raw material gas having constituent atoms, and a raw material gas having carbon atoms (C) and hydrogen atoms (H) as constituent sources are also mixed at a desired mixing ratio, or silicon atoms (Si) are constituent atoms. Or a raw material gas containing silicon atoms (Si), carbon atoms (C) and hydrogen atoms (H) as constituent atoms, or further, silicon atoms (Si) and hydrogen atoms (H). A raw material gas having constituent atoms and a raw material gas having carbon atoms (C) as constituent atoms are mixed and used.

To form a light-receiving layer composed of a-Si (H, X) by the sputtering method, a monocrystalline or polycrystalline Si wafer or C (graphite) wafer, or a mixture of Si and C is used. This is carried out by using the contained wafer as a target and sputtering these in a desired gas atmosphere.

For example, when using a Si wafer as a target, the raw material gas for introducing carbon atoms and / or hydrogen atoms and / or halogen atoms may be diluted with a diluting gas such as Ar or He, if necessary, for sputtering. The Si wafer may be sputtered by introducing the gas plasma of these gases into the deposition chamber.

Also, Si and C should be different targets or Si
When used as a single target containing a mixture of C and C, a raw material gas for introducing hydrogen atoms and / or halogen atoms as a gas for sputtering is diluted with a diluting gas as needed, and deposited for spattering. Introduced in the room,
Gas plasma may be formed and sputtered. As the raw material gas for introducing each atom used in the sputtering method, the raw material gas used in the glow discharge method can be used as it is.

Effectively used as such a source gas is hydrogen such as silane (Silane) having Si and H as constituent atoms such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ and Si ₄ H _10. Silicon gas, C and H as constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like. .

Specifically, the saturated hydrocarbons include methane (CH _4), ethane (C ₂ H _6), propane (C ₃ H _8), n- butane (nC ₄ H _10),
Pentane (C ₅ H ₁₂ ), ethylene hydrocarbons include ethylene (C ₂ H ₄ ), propylene (C ₃ H ₆ ), butene-1 (C ₄ H ₈ ), butene-2 (C ₂ H ₈ ). , Isobutylene (C ₄ H ₈ ), pentene (C
₅ H ₁₀ ), acetylene-based hydrocarbons include acetylene (C ₂
H ₂ ), methylacetylene (C ₃ H ₄ ), butyne (C ₄ H ₆ ) and the like.

As a source gas containing Si, C and H as constituent atoms, Si (C
Mention may be made of alkyl silicides such as H ₃ ) ₄ and Si (C ₂ H ₅ ) ₄ . In addition to these source gases, H ₂ can of course be used as the source gas for introducing H.

When the light receiving layer of the present invention is formed by a glow discharge method, a sputtering method, or an ion plating method,
The content of oxygen atoms, carbon atoms and nitrogen atoms, or group III atoms or group V atoms introduced into a-Si (H, X) is controlled by controlling the gas flow rate of the starting material flowing into the deposition chamber and the gas. This is done by controlling the flow rate ratio.

In addition, conditions such as the temperature of the support at the time of forming the light receiving layer, the gas pressure in the deposition chamber, and the discharge power are important factors for obtaining a light receiving member having desired characteristics, and the function of the layer to be formed is It will be appropriately selected taking into consideration. Furthermore, since the conditions for forming these layers may differ depending on the type and amount of each of the above-mentioned atoms contained in the light-receiving layer, it is determined by taking into consideration the type of the contained atoms or the amount thereof. You also need to do it.

Specifically, the support temperature is usually 50 to 350 ° C.,
Particularly preferably, the temperature is 50 to 250 ° C. The gas pressure in the deposition chamber is usually 0.01 to 1 Torr, particularly preferably 0.1 to 1 Torr.
Set to 0.5 Torr. The discharge power is usually 0.005 to 50 W / cm ² , but more preferably 0.01 to 30 W / c.
m ² and particularly preferably 0.01 to 20 W / cm ² .

However, the specific conditions of the temperature of the support, the discharge power, and the gas pressure in the deposition chamber for forming layers are usually difficult to determine individually.
Therefore, in order to form an amorphous material layer with desired characteristics,
It is desirable to determine the optimum conditions for layer formation based on mutual and organic relationships.

By the way, an oxygen atom contained in the light-receiving layer of the present invention,
In order to make the distribution of carbon atoms, nitrogen atoms, group III atoms or group V atoms, or hydrogen atoms and / or halogen atoms uniform, the above-mentioned various conditions should be kept constant when forming the light-receiving layer. It is necessary to keep.

Further, in the present invention, when the light-receiving layer is formed, the distribution concentration of oxygen atom, carbon atom, nitrogen atom, or group III atom or group V atom contained in the layer is changed in the layer thickness direction. In order to form a photoreceptive layer having a desired state of distribution in the layer thickness direction by using the glow discharge method,
The gas flow rate when introducing the oxygen atom, carbon atom, nitrogen atom, or the starting material gas for introducing the group III atom or the group V atom into the deposition chamber is appropriately changed according to the desired rate of change, and It is formed while keeping the conditions constant. And
In order to change the gas flow rate, specifically, the opening of a predetermined needle valve provided in the middle of the gas flow path system is gradually changed by some commonly used method such as manual operation or an external drive motor. All you have to do is operate.
At this time, the rate of change of the flow rate does not have to be linear, and it is possible to obtain a desired content rate curve by controlling the flow rate according to a previously designed rate-of-change curve using, for example, a microcomputer.

When the photoreceptive layer is formed by the sputtering method, the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, group III atoms or group V atoms in the layer thickness direction is changed in the layer thickness direction to obtain a desired value. In order to form a distribution state in the layer thickness direction, as in the case of using the glow discharge method, a starting material for introducing an oxygen atom, a carbon atom, a nitrogen atom or a group III atom or a group V atom in a gas state is used. Used to change the gas flow rate when introducing the gas into the deposition chamber according to the desired rate of change.

〔Example〕

Hereinafter, the present invention will be described in more detail with reference to Examples 1 to 8, but the present invention is not limited thereto.

In each of the examples, the light receiving layer was formed using the glow discharge method. FIG. 16 shows an apparatus for manufacturing the light receiving member of the present invention by the glow discharge method.

In the gas cylinders 1602, 1603, 1604, 1605, 1606 in the figure, raw material gases for forming the respective layers of the present invention are sealed, and as an example thereof, 1602 is SiH ₄ gas (purity 99.999. %) bomb, 1603 was diluted with H ₂ B ₂
H ₆ gas (purity 99.999%, hereinafter abbreviated as B ₂ H ₆ / H ₂ ) cylinder, 1604 is CH ₄ gas (purity 99.999%) cylinder, 1605 is SiF
₄ gas (purity 99.999%) cylinder, 1606 is H ₂ gas (purity 9
9.999%) It is a cylinder.

A gas cylinder is required to allow these gases to flow into the reaction chamber 1601.
Check that valves 1622-1626 of 1602-1606, leak valve 1635 are closed, and inflow valves 1612-1616,
After confirming that the outflow valves 1617 to 1621 and the auxiliary valves 1632 and 1633 are opened, the main valve 1634 is first opened to exhaust the reaction chamber 1601 and the gas pipe. Next, when the reading of the vacuum gauge 1636 reaches about 5 × 10 ^-6 Torr, the auxiliary valve 163
2, 1633, close outflow valves 1617-1621.

An example of forming the light receiving layer on the base cylinder 1637 will be described. SiH ₄ gas from gas cylinder 1602, gas cylinder 16
Open the valves 1622, 1623, 1624, 2626 for B ₂ H ₆ / H ₂ gas from 03 and CH ₄ gas from the gas cylinder 1604, respectively, and open the outlet pressure gauge.
The pressure of 1627, 1628, 1629, 1631 is adjusted to 1 kg / cm ² , the inflow valves 1612, 1613, 1614, 1616 are gradually opened to flow into the mass flow controllers 1607, 1608, 1609, 1611. Subsequently, the outflow valves 1617, 1618, 1619, 1621 and the auxiliary valves 1632, 1633 are gradually opened to allow the gas to flow into the reaction chamber 1601. SiH ₄ gas flow rate at this time, B ₂ H ₆ / H ₂ gas flow rate CH ₄ gas flow rate and adjust the outflow valves 1617, 1618, 1619, 1621 so that the ratio of H ₂ gas flow rate is a desired value,
Also, use a vacuum gauge to adjust the pressure in the reaction chamber 1601 to the desired value.
Adjust the opening of the main valve 1634 while watching the reading of 1636. The temperature of the base cylinder 1637 is the heater 16
After confirming that the temperature is set in the range of 50 to 400 ° C. by 38, the power source 1640 is set to a desired electric power to cause the glow discharge in the reaction chamber 1601 and the micro computer (not shown). ) Is used to control the CH ₄ gas flow rate, the H ₂ gas flow rate B ₂ H ₆ / H ₂ gas flow rate, and the SiH ₄ gas flow rate in accordance with a predesigned rate-of-change line,
First, a layer composed of a-Si (H, X) containing carbon atoms and boron atoms is formed on the base cylinder 1637.

After a lapse of a predetermined time, the valves of 1818, 1613, 1623 for introducing B ₂ H ₆ / H ₂ gas into the reaction chamber 1601 are closed, and SiH ₄ gas CH ₄
Gas and H ₂ gas alone are introduced into the reaction chamber 1601, so that the a-Si (H,
A layer composed of an a-Si (H, X) layer containing carbon atoms but not boron atoms can be formed on the layer composed of layer X).

Needless to say, all of the outflow valves other than the gas outflow valves necessary for forming each layer are closed, and when forming each layer, the gas used for forming the previous layer is the same as the reaction chamber.
Outflow valve in 1601 to avoid remaining in the gas pipe from outflow valve 1617 to 1621 to reaction chamber 1601
1617 to 1621 are closed, auxiliary valves 1632 and 1633 are opened, the main valve 1634 is fully opened, and the system is temporarily evacuated to a high vacuum, if necessary.

Test Example 1 A hard ball made of SUS stainless steel having a diameter of 0.6 mm was chemically treated to etch the surface to form irregularities. Examples of the treating agent used include acids such as hydrochloric acid, hydrofluoric acid, sulfuric acid and chromic acid, and alkalis such as caustic soda. In this test example, a hydrochloric acid solution obtained by mixing 1 to 4 of pure water with concentrated hydrochloric acid was used, and the immersion time of the hard spheres, the acidity, etc. were changed to appropriately adjust the shape of the irregularities. did.

Test Example 2 Using a hard sphere (height of surface irregularities γmax = 5 μm) treated by the method of Test Example 1, using an apparatus shown in FIGS. 6 (A) and 6 (B), an aluminum alloy was used. Cylinder (diameter 60m
m, length 298 mm) was treated to form irregularities.

When the relationship between the radius R'of the true sphere, the drop height h, the curvature deformation R of the trace dent, and the width r is investigated, the radius of curvature R and the width r of the trace dent are the radius R'of the sphere and the drop height. It was confirmed that it was decided by the conditions such as h. In addition, it was confirmed that the pitch of the trace pits (density of trace pits and pitch of irregularities) can be adjusted to the desired pitch by controlling the rotation speed of the cylinder, the number of revolutions, or the drop amount of the rigid spherical body. Was done.
Furthermore, as a result of examining the sizes of R and D, R
However, if it is less than 0.1 mm, it is necessary to secure the drop height by making the rigid sphere small and light, which makes it difficult to control the formation of trace pits, which is not preferable, and R is 2.0 mm.
If it exceeds, the height of the hard sphere is made heavy and the fall height is adjusted. Therefore, for example, when the D is relatively small, it is necessary to make the fall height extremely low. In addition, if D is less than 0.02 mm, it is necessary to secure the drop height by making the rigid sphere small and light, and it is difficult to control the formation of the trace dents. confirmed.

Furthermore, when the formed trace dent was tried, it was confirmed that minute ruggedness corresponding to the surface ruggedness of the hard sphere was formed in the trace dent.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as in Test Example 2 to obtain a cylindrical A support (cylinder Nos. 101 to 106) having D and D / R shown in the upper column of Table 1A. .

Next, a light-receiving layer was formed on the A support (cylinder Nos. 101 to 106) under the conditions shown in Table 1B below by the manufacturing apparatus shown in FIG.

The boron atom contained in the light-receiving layer is B ₂ H ₆ / SiF.
₄ ≈ 100 ppm, and it was introduced as much as possible so that the entire layer was doped with about 200 ppm.

These light receiving members were subjected to image exposure by irradiating a laser beam having a wavelength of 780 nm and a spot diameter of 80 μm using the image exposure device shown in FIG. 17, and developed and transferred to obtain an image. The appearance of interference fringes in the obtained image is as shown in the lower column of Table 1A.

Note that FIG. 17 (A) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 17 (B) is a side schematic view schematically showing the entire exposure apparatus. In the figure, 1701 is a light receiving member, 1702 is a semiconductor laser, 1703 is an fθ lens, and 1704 is a polygon mirror.

Next, for comparison, a cylinder made of aluminum alloy (diameter 60 mm, surface-treated with a conventional diamond bite,
Using a length of 298 mm, an uneven pitch of 100 μm, and an uneven depth of 3 μm, a light receiving member was produced in the same manner as described above. When the obtained light receiving member was observed with an electron microscope, the surface of the support was parallel to the layer interface of the light receiving layer and the surface of the light receiving layer. An image was formed in the same manner as described above using this light receiving member, and the obtained image was evaluated in the same manner as described above. The results are shown in the lower column of Table 1A.

Example 2 A light-receiving layer was formed on a support A (cylinders No. 101 to 107) in the same manner as in Example 1 except that the light-receiving layer was formed according to the layer forming conditions shown in Table 2B. .

An image was formed on the obtained light-receiving member in the same manner as in Example 1. As a result, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

Example 3 In the same manner as in Example 1 except that a hard sphere having a surface irregularity height (γmax) shown in the upper column of Table 3A was used, a spherical trace depression (D = 450 ± 50 (μm), A support (cylinder Nos. 301 to 306) was obtained.

Next, a light-receiving layer was formed on the A support (cylinder Nos. 301 to 306) under the conditions shown in Table 3B below using the manufacturing apparatus shown in FIG.

The gas flow rates of the NH ₃ gas and B ₂ H ₆ / H ₂ gas at the time of forming the light receiving layer were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG. The boron atom contained in the light-receiving layer was introduced under the same conditions as in Example 1.

An image was formed on the obtained light-receiving member in the same manner as in Example 1. The occurrence of interference fringes in the obtained image was as shown in the lower column of Table 3A.

Example 4 A light-receiving layer was formed on a support A (cylinders No. 301 to 306) in the same manner as in Example 3 except that the light-receiving layer was formed according to the layer forming conditions shown in Table 4B. did. In addition,
The gas flow rates of the B ₂ H ₆ / H ₂ gas and the H ₂ gas during the formation of the light receiving layer were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG. The boron atoms contained in the light-receiving layer were under the same conditions as in Example 1.

An image was formed on the obtained light-receiving member in the same manner as in Example 1. The occurrence of interference fringes in the obtained image was as shown in the lower column of Table 4A.

Examples 5 to 7 The same as Example 1 except that the light receiving layer was formed on the A support (cylinder No. 103 to 106) of Example 1 according to the layer forming conditions shown in Tables 5 to 7. Then, a light receiving member was produced. In Examples 5 to 7, the flow rate of the gas used during the formation of the light receiving layer was automatically adjusted by microcomputer control according to the flow rate change lines shown in FIGS. Further, the boron atom contained in the light-receiving layer was introduced under the same conditions as in Example 1 in each of the Examples.

An image was formed on the obtained light receiving member in the same manner as in Example 1.

In each of the obtained images, no occurrence of interference fringes was observed,
And it was of very good quality.

[Outline of Effects of the Invention] The light-receiving member of the present invention has the above-mentioned layer structure, whereby all the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon can be solved. In particular, even when a laser light which is a coherent monochromatic light is used as a light source, it is possible to remarkably prevent the appearance of an interference fringe pattern in a formed image due to an interference phenomenon and form a very high quality visible image. it can.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing an example of the light receiving member of the present invention, and FIGS. 2 and 3 are for explaining the principle of preventing the generation of interference fringes in the light receiving member of the present invention. FIG. 2 is a partially enlarged view, FIG. 2 is a view showing that interference fringes can be prevented from being generated in a light receiving member in which irregularities due to spherical trace depressions are formed on the surface of a support, and FIG. 3 is a conventional surface. FIG. 6 is a diagram showing that interference fringes are generated in a light receiving member in which a light receiving layer is deposited on a support which is regularly roughened. FIGS. 4 and 5 are schematic views for explaining the uneven shape of the surface of the support of the light receiving member of the present invention and a method for producing the uneven shape. FIG. 6 is a diagram schematically showing one structural example of an apparatus suitable for forming the uneven shape provided on the support of the light receiving member of the present invention, and FIG. 6 (A) is a front view. , FIG. 6 (B) is a vertical sectional view. 7 to 15 are at least one kind selected from oxygen atom, carbon atom and nitrogen atom in the light receiving layer of the light receiving member of the present invention, or the distribution of group III atom or group V atom in the layer thickness direction. In each figure, the vertical axis represents the layer thickness of the light-receiving layer, and the horizontal axis represents the distribution concentration of each atom. FIG. 16 is an example of an apparatus for manufacturing the light receiving layer of the light receiving member of the present invention, and is a schematic explanatory view of a manufacturing apparatus by a glow discharge method. FIG. 17 is a diagram for explaining an image exposure device using laser light. FIGS. 18 to 22 are views showing changes in the gas flow rate ratio in forming the light receiving layer of the present invention, in which the vertical axis represents the layer thickness of the light receiving layer and the horizontal axis represents the gas flow rate of the used gas. 1 to 3, 100 ... Light receiving member, 101 ... Support 102 ... Light receiving layer 102 ', 201, 301 ... First layer 102 ", 202, 302 ... Second layer 103, 203, 303 ... Free surface 204, 304 ... Interface between the first layer and the second layer With respect to FIGS. 4 and 5, 401, 501 ... Support, 402, 502 ... Support surface 403 , 503 …… Spherical dents 403 ′, 503 ′ …… Rigid spheres with irregularities on the surface 404 …… Minute ruggedness formed in spherical dents 404 ′ …… Roughness formed on the surface of rigid spheres Regarding FIG. 6, 601 ... Cylinder, 602 ... Rotating shaft (receiver) 603 ... Driving means, 604 ... Rotating container 605 ... Rigid sphere having uneven surface 606 ... Rib provided on inner wall of container 607 …… Shower tube Regarding Fig. 1601, 1601 …… Reaction chamber, 1062 to 1606 …… Gas cylinder 1607 to 1611 …… Mass flow controller 1612 to 1616 …… Inflow valve 1617 to 1621 Outflow valve 1622 to 1626 ... Valve 1627 to 1631 ... Pressure regulator 1632, 1633 ... Auxiliary valve 1634 ... Main valve 1635 ... Leak valve, 1636 ... Vacuum gauge 1637 ... Base cylinder 1638 ... Heating Heater, 1639 …… Motor 1640 …… High frequency power source About Fig. 17, 1701 …… Light receiving member, 1702 …… Semiconductor laser 1703 …… fθ lens, 1704 …… Polygon mirror

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Jun Koike 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP-A-60-31144 (JP, A) JP-A-59 -58436 (JP, A) JP-A-54-145539 (JP, A) JP-A-54-145540 (JP, A) US Patent 4432220 (US, A) US Patent 3269066 (US, A)

Claims (10)

[Claims] 1. A silicon atom, an oxygen atom, and
A light-receiving member having a multi-layered light-receiving layer having at least a photosensitive layer composed of an amorphous material containing at least one selected from carbon atoms and nitrogen atoms, wherein the surface of the support is , The concave radius D is 500 μm or less, and the concave radius of curvature R and the width D are 0.035 ≦ D / R, the concave and convex portions are formed by a plurality of spherical trace concaves, and the spherical trace concaves further have 0.5 to 20 μm. The light-receiving member is characterized in that the minute irregularities are formed. 2. The light-receiving layer contains an atom belonging to Group III or Group V of the periodic table.
Item 7. The light receiving member according to item. 3. The light according to claim 1, wherein the light receiving layer has a charge injection blocking layer containing an atom belonging to Group III or Group V of the periodic table as one of the constituent layers. Receiving member. 4. The light receiving member according to claim 1, wherein the light receiving layer has a barrier layer as one of the constituent layers. 5. The concavo-convex pattern of the spherical trace dents is a concave-convex pattern of spherical trace dents having the same radius of curvature.
Item 7. The light receiving member according to item. 6. The light receiving member according to claim 1, wherein the unevenness of the spherical trace depression is unevenness having depressions having the same radius of curvature and width. 7. The spherical dents are unevenness due to the dents of the rigid true spheres obtained by naturally dropping a plurality of rigid spheres having unevenness on the surface of the support. The light receiving member according to item 1. 8. The spherical dents are unevenness due to the dents of the hard spheres obtained by dropping hard spheres having unevenness on the surface and having substantially the same diameter from substantially the same height. Item 7. The light receiving member according to item 7. 9. The light receiving member according to claim 1, wherein the radius of curvature R and the width D of the spherical trace depression are values satisfying the following expression: 0.035 ≦ D / R ≦ 0.5. . 10. The light receiving member according to claim 1, wherein the support is a metal body.