[go: up one dir, main page]

JPH0666643A - Substrate with temperature detector - Google Patents

Substrate with temperature detector

Info

Publication number
JPH0666643A
JPH0666643A JP22131092A JP22131092A JPH0666643A JP H0666643 A JPH0666643 A JP H0666643A JP 22131092 A JP22131092 A JP 22131092A JP 22131092 A JP22131092 A JP 22131092A JP H0666643 A JPH0666643 A JP H0666643A
Authority
JP
Japan
Prior art keywords
substrate
temperature
temperature detector
thermocouple
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22131092A
Other languages
Japanese (ja)
Inventor
Yuuji Narasada
裕至 奈良定
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Engineering Corp
Mitsubishi Electric Corp
Original Assignee
Renesas Semiconductor Engineering Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Engineering Corp, Mitsubishi Electric Corp filed Critical Renesas Semiconductor Engineering Corp
Priority to JP22131092A priority Critical patent/JPH0666643A/en
Publication of JPH0666643A publication Critical patent/JPH0666643A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect the temperature of a semiconductor substrate accurately at the time of heat treatment while allowing detection of temperatures at many points on the substrate. CONSTITUTION:A thin film thermocouple 3 is formed on a substrate 1 and an electromotive force, corresponding to the temperature of the substrate 1, is induced at a contact part 33 of the thermocouple 3. The electromotive force is detected and employed in the measurement of temperature of the substrate 1. When a plurality of sets of thin film thermocouple 3 are provided on the substrate, temperatures at many points on the substrate can be measured concurrently.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体デバイスの製造
等に用いられる基板の温度測定に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to temperature measurement of a substrate used for manufacturing semiconductor devices and the like.

【0002】[0002]

【従来の技術】図6は、従来の温度測定に用いられてい
る熱電対付き基板である。図において、7は熱電対を固
定するセメント、1は基板、12は熱電対である。
2. Description of the Related Art FIG. 6 shows a substrate with a thermocouple used for conventional temperature measurement. In the figure, 7 is a cement for fixing a thermocouple, 1 is a substrate, and 12 is a thermocouple.

【0003】次に動作を説明する。熱電対12はセメン
ト7によって基板1に固定されている。基板1が加熱さ
れると、同時にセメント7も加熱され、セメント7の内
部に固定された熱電対12の異種金属の接合部では、ゼ
ーベック効果による起電力が発生し、この起電圧を計測
することにより、基板1の温度を測定する。
Next, the operation will be described. The thermocouple 12 is fixed to the substrate 1 with cement 7. When the substrate 1 is heated, the cement 7 is also heated at the same time, and an electromotive force due to the Seebeck effect is generated at the joint portion of the dissimilar metal of the thermocouple 12 fixed inside the cement 7, and this electromotive voltage should be measured. Thus, the temperature of the substrate 1 is measured.

【0004】[0004]

【発明が解決しようとする課題】従来の技術では、熱電
対12がセメント7によって固定されているので、基板
1と熱電対12との接触状態が一定ではなく、特に短時
間の加熱冷却プロセス時には、接触状態の差により温度
表示が異なるという問題点があった。又、基板面内の複
数点で測定する場合、熱電対を取り付けるスペースが大
きい為、多点の同時測定が不能であった。
In the prior art, since the thermocouple 12 is fixed by the cement 7, the contact state between the substrate 1 and the thermocouple 12 is not constant, especially during a heating / cooling process for a short time. However, there is a problem that the temperature display differs depending on the contact state. Further, when measuring at a plurality of points on the substrate surface, it is impossible to simultaneously measure at a plurality of points because the space for mounting the thermocouple is large.

【0005】この発明は、上記の問題点を解決するため
になされたもので、熱電対と基板の接触状態の差による
温度表示の誤差をなくし、また、基板内の多点箇所の同
時測定を可能にすることを目的としている。
The present invention has been made to solve the above problems, eliminates the error of temperature display due to the difference in the contact state between the thermocouple and the substrate, and allows simultaneous measurement at multiple points in the substrate. It is intended to be possible.

【0006】[0006]

【課題を解決するための手段】この発明に係る温度検出
器付き基板は、熱電対を構成する一対の薄膜状の金属部
材からなる温度検出器を基板上に配置したものである。
また、温度検出器として薄膜状の測温抵抗体を基板上に
形成したものである。また、基板上の複数箇所に温度検
出器をそれぞれ設けたものである。
A substrate with a temperature detector according to the present invention has a temperature detector made of a pair of thin-film metal members forming a thermocouple arranged on the substrate.
Further, a thin film resistance temperature detector is formed on the substrate as a temperature detector. In addition, temperature detectors are provided at a plurality of locations on the substrate.

【0007】[0007]

【作用】この発明における温度検出器付き基板は、薄膜
状の熱電対の起電力で基板の温度を検出する。また、測
温抵抗体の抵抗値により、基板の温度を検出する。ま
た、複数個の薄膜上の熱電対または測温抵抗体で複数箇
所の基板の温度を検出する。
The substrate with a temperature detector according to the present invention detects the temperature of the substrate by the electromotive force of a thin film thermocouple. Further, the temperature of the substrate is detected by the resistance value of the resistance temperature detector. Further, the temperature of the substrate at a plurality of locations is detected by thermocouples or resistance temperature detectors on the plurality of thin films.

【0008】[0008]

【実施例】【Example】

実施例1.以下、この発明の実施例を図について説明す
る。図1において、1は半導体の基板、2は基板1上に
形成された薄膜状の絶縁部材、3は薄膜状の異種の金属
部材31、32を接触部33で接合して、絶縁部材2上
に配置して構成した熱電対である。ここで熱電対3は接
触部33のゼーベック効果によって基板1の温度に応じ
た起電力を発生する。4は薄膜化した熱電対3を保護す
るための保護膜、5は薄膜化した熱電対3の端部に設け
られたパッド部、6はこのパッド部5に溶着された熱電
対素線、7は熱電対素線6を固定するセメントである。
Example 1. Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, 1 is a semiconductor substrate, 2 is a thin film-shaped insulating member formed on the substrate 1, 3 is a thin film-shaped dissimilar metal member 31, 32 joined at a contact portion 33, It is a thermocouple that is configured by arranging. Here, the thermocouple 3 generates an electromotive force according to the temperature of the substrate 1 due to the Seebeck effect of the contact portion 33. Reference numeral 4 is a protective film for protecting the thinned thermocouple 3, 5 is a pad portion provided at an end of the thinned thermocouple 3, 6 is a thermocouple element wire welded to the pad portion, 7 Is a cement for fixing the thermocouple wire 6.

【0009】次に動作を説明する。基板1が加熱される
と、薄膜状の熱電対3の接触部33にてゼーベック効果
により起電力が発生する。この起電力を熱電対素線6で
基板外に取り出し、起電圧を測定することにより基板1
の温度を測定することがてきる。
Next, the operation will be described. When the substrate 1 is heated, an electromotive force is generated by the Seebeck effect at the contact portion 33 of the thin film thermocouple 3. This electromotive force is taken out of the substrate by the thermocouple element 6 and the electromotive force is measured to obtain the substrate 1
It is possible to measure the temperature of.

【0010】実施例2.上記実施例1では、薄膜状の熱
電対を用いたが、薄膜状の測温抵抗体を用いてもよい。
図3は薄膜にする測温抵抗体の材料の一例を示したもの
で、熱処理温度によって材料の電気特性が変化する材料
(図3はWSi2膜の例)を用い、その電気特性を測定し
ても同様の効果が得られる。
Embodiment 2. Although the thin film thermocouple is used in the first embodiment, a thin film resistance temperature detector may be used.
FIG. 3 shows an example of the material of the resistance temperature detector which is made into a thin film. The material whose electric characteristic changes depending on the heat treatment temperature (FIG. 3 shows an example of the WSi2 film) is used to measure the electric characteristic. Also has the same effect.

【0011】図2はこの実施例を示したもので、8は薄
膜状に形成された測温抵抗体、9は薄膜状の測温抵抗体
8の電気特性を外部から測定するための耐熱導電体であ
る。基板1が熱処理される場合、薄膜状の測温抵抗体8
の電気特性(この場合抵抗値)の変化から基板1の加熱
温度を求めることができる。
FIG. 2 shows this embodiment, in which 8 is a resistance thermometer formed in a thin film shape, and 9 is a heat-resistant conductive material for externally measuring the electric characteristics of the thin film resistance thermometer element 8. It is the body. When the substrate 1 is heat-treated, a thin film resistance temperature detector 8
The heating temperature of the substrate 1 can be obtained from the change in the electrical characteristics (in this case, the resistance value).

【0012】実施例3.実施例2の変形例として、熱処
理を行うことによって電気特性が変化し、且つ、その特
性が常温になるまで冷却されてもその特性が変化しない
材料を用いた場合、熱処理後にその電気特性を計測して
も同様の効果が得られる。
Embodiment 3. As a modified example of the second embodiment, when a material whose electric characteristics are changed by heat treatment and whose characteristics are not changed even when the characteristics are cooled to room temperature is used, the electric characteristics are measured after the heat treatment. Even if the same effect is obtained.

【0013】図4はこの実施例を示し、10は熱処理時
の加熱温度に応じた電気特性を保持する材料を用いた薄
膜状の測温抵抗体で、熱処理後に冷却された後パッド部
5に測定器の針を当てて薄膜の電気特性を計測し処理温
度を測定する。
FIG. 4 shows this embodiment, and 10 is a thin film resistance temperature detector made of a material that retains electric characteristics according to the heating temperature during heat treatment. The processing temperature is measured by touching the needle of the measuring instrument and measuring the electrical characteristics of the thin film.

【0014】実施例4.実施例2と3において、測温抵
抗体8と10は直線的にパターニングしたが、図5に示
すように、ジグザク状の測温抵抗体11を形成してもよ
い。この場合測温抵抗体11の電気特性の変化の差が大
きくなり測定感度を上げることができる。
Example 4. In the second and third embodiments, the resistance temperature detectors 8 and 10 are linearly patterned, but a zigzag resistance temperature detector 11 may be formed as shown in FIG. In this case, the difference in change in the electrical characteristics of the resistance temperature detector 11 becomes large, and the measurement sensitivity can be increased.

【0015】実施例5.上記の実施例では、1個の温度
検出器を形成するようにしたが、複数個の温度検出器を
形成することによって基板上の多くの点の温度を同時に
検出することができる。
Example 5. In the above embodiment, one temperature detector is formed, but by forming a plurality of temperature detectors, the temperatures at many points on the substrate can be detected at the same time.

【0016】[0016]

【発明の効果】以上のように、この発明によれば基板上
に薄膜状の温度検出器を形成するようにしたので、基板
と温度を検出する部分との接触状態が一定になり、精度
の高い安定した温度測定ができる。又、薄膜化すると温
度検出部分の面積を小さくできるので、基板上の多数箇
所の温度測定が容易にできる効果がある。
As described above, according to the present invention, since the thin-film temperature detector is formed on the substrate, the contact state between the substrate and the portion for detecting the temperature becomes constant, and the accuracy is improved. Highly stable temperature measurement is possible. Further, if the film is thinned, the area of the temperature detecting portion can be reduced, so that it is possible to easily measure the temperature at many points on the substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の実施例1を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of the present invention.

【図2】この発明の実施例2を示す斜視図である。FIG. 2 is a perspective view showing a second embodiment of the present invention.

【図3】この発明の実施例2の電気特性を示す特性図で
ある。
FIG. 3 is a characteristic diagram showing electrical characteristics of Example 2 of the present invention.

【図4】この発明の実施例3を示す斜視図である。FIG. 4 is a perspective view showing a third embodiment of the present invention.

【図5】この発明の実施例4を示す斜視図である。FIG. 5 is a perspective view showing a fourth embodiment of the present invention.

【図6】従来の温度検出器付き基板の斜視図である。FIG. 6 is a perspective view of a conventional substrate with a temperature detector.

【符号の説明】[Explanation of symbols]

1 基板 3 熱電対 4 保護膜 7 セメント 8 測温抵抗体 1 Substrate 3 Thermocouple 4 Protective film 7 Cement 8 Resistance temperature detector

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体の基板、この基板上に配置された
一対の薄膜状の金属部材からなる熱電対を有する温度検
出器を備え、この温度検出器の熱電対の起電力によって
上記基板の温度を検出するようにしたことを特徴とする
温度検出器付き基板。
1. A semiconductor substrate, and a temperature detector having a thermocouple composed of a pair of thin-film metal members arranged on the substrate, the temperature of the substrate being generated by the electromotive force of the thermocouple of the temperature detector. A substrate with a temperature detector, which is configured to detect temperature.
【請求項2】 半導体の基板、この基板上に配置された
薄膜状の測温抵抗体を有する温度検出器を備え、この温
度検出器の測温抵抗体の電気特性の変化によって上記基
板の温度を検出するようにしたことを特徴とする温度検
出器付き基板。
2. A semiconductor substrate, comprising a temperature detector having a thin film resistance temperature detector arranged on the substrate, wherein the temperature of the substrate is changed by a change in electric characteristics of the resistance temperature detector of the temperature detector. A substrate with a temperature detector, which is configured to detect temperature.
【請求項3】 半導体の基板上の複数箇所に温度検出器
をそれぞれ設け、上記基板の複数箇所の温度を検出する
ようにしたことを特徴とする請求項1または請求項2記
載の温度検出器付き基板。
3. The temperature detector according to claim 1, wherein temperature detectors are provided at a plurality of locations on the semiconductor substrate, respectively, to detect temperatures at a plurality of locations on the substrate. Substrate with.
JP22131092A 1992-08-20 1992-08-20 Substrate with temperature detector Pending JPH0666643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22131092A JPH0666643A (en) 1992-08-20 1992-08-20 Substrate with temperature detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22131092A JPH0666643A (en) 1992-08-20 1992-08-20 Substrate with temperature detector

Publications (1)

Publication Number Publication Date
JPH0666643A true JPH0666643A (en) 1994-03-11

Family

ID=16764799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22131092A Pending JPH0666643A (en) 1992-08-20 1992-08-20 Substrate with temperature detector

Country Status (1)

Country Link
JP (1) JPH0666643A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6676289B2 (en) * 2000-08-22 2004-01-13 Kabushiki Kaisha Toshiba Temperature measuring method in pattern drawing apparatus
JP2006292703A (en) * 2005-04-05 2006-10-26 Yoshinobu Abe Thermocouple
CN100389308C (en) * 2004-05-26 2008-05-21 鸿富锦精密工业(深圳)有限公司 Chip temperature measurement device and method
DE102015115956B3 (en) * 2015-09-22 2017-02-23 Universität Stuttgart Temperature measuring device and method for its production
WO2021237602A1 (en) * 2020-05-28 2021-12-02 南昌欧菲显示科技有限公司 Thin film type thermocouple, temperature sensor, and intelligent wearable device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6676289B2 (en) * 2000-08-22 2004-01-13 Kabushiki Kaisha Toshiba Temperature measuring method in pattern drawing apparatus
CN100389308C (en) * 2004-05-26 2008-05-21 鸿富锦精密工业(深圳)有限公司 Chip temperature measurement device and method
JP2006292703A (en) * 2005-04-05 2006-10-26 Yoshinobu Abe Thermocouple
JP4671752B2 (en) * 2005-04-05 2011-04-20 可伸 安部 thermocouple
DE102015115956B3 (en) * 2015-09-22 2017-02-23 Universität Stuttgart Temperature measuring device and method for its production
WO2021237602A1 (en) * 2020-05-28 2021-12-02 南昌欧菲显示科技有限公司 Thin film type thermocouple, temperature sensor, and intelligent wearable device

Similar Documents

Publication Publication Date Title
US6084174A (en) Method for detecting temperature gradients in biological tissue using a thermocouple array
JP3937191B2 (en) Semiconductor chemical sensor element and method for forming thermocouple for semiconductor chemical sensor element
US20020085615A1 (en) Differential scanning calorimeter
JPS63243885A (en) Flow velocity detector
JP4243540B2 (en) Sensor component with sensor element surrounded by a heating element
US3232113A (en) Thermal parameter indicator
US6863438B2 (en) Microstructured thermosensor
JPH0666643A (en) Substrate with temperature detector
US20200049647A1 (en) Sensor Device and Electronic Assembly
US4166390A (en) Scanning radiometer apparatus
JPH0194218A (en) Thermal flow rate detector
US6437331B1 (en) Bolometer type infrared sensor with material having hysterisis
JPS61259580A (en) Thermopile
JP3300110B2 (en) Gas detector
JP2000055743A (en) Multi-point mean temp. measuring apparatus
JP3345695B2 (en) Acceleration sensor
JPH075050A (en) Temperature sensor
JPH11258040A (en) Thermopile type infrared ray sensor
KR20240174589A (en) Resistance Temperature Detector using silicon carbide
JPH0583852B2 (en)
JPH0584867B2 (en)
JP7599930B2 (en) Sensors and Systems
JP2018141664A (en) Flow sensor
JPH07140008A (en) Radiation thermometer
JPH0634448A (en) Radiation thermometer