JPH0666643A - Substrate with temperature detector - Google Patents
Substrate with temperature detectorInfo
- Publication number
- JPH0666643A JPH0666643A JP22131092A JP22131092A JPH0666643A JP H0666643 A JPH0666643 A JP H0666643A JP 22131092 A JP22131092 A JP 22131092A JP 22131092 A JP22131092 A JP 22131092A JP H0666643 A JPH0666643 A JP H0666643A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- temperature detector
- thermocouple
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000010259 detection of temperature stimulus Effects 0.000 abstract 1
- 239000004568 cement Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は半導体デバイスの製造
等に用いられる基板の温度測定に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to temperature measurement of a substrate used for manufacturing semiconductor devices and the like.
【0002】[0002]
【従来の技術】図6は、従来の温度測定に用いられてい
る熱電対付き基板である。図において、7は熱電対を固
定するセメント、1は基板、12は熱電対である。2. Description of the Related Art FIG. 6 shows a substrate with a thermocouple used for conventional temperature measurement. In the figure, 7 is a cement for fixing a thermocouple, 1 is a substrate, and 12 is a thermocouple.
【0003】次に動作を説明する。熱電対12はセメン
ト7によって基板1に固定されている。基板1が加熱さ
れると、同時にセメント7も加熱され、セメント7の内
部に固定された熱電対12の異種金属の接合部では、ゼ
ーベック効果による起電力が発生し、この起電圧を計測
することにより、基板1の温度を測定する。Next, the operation will be described. The thermocouple 12 is fixed to the substrate 1 with cement 7. When the substrate 1 is heated, the cement 7 is also heated at the same time, and an electromotive force due to the Seebeck effect is generated at the joint portion of the dissimilar metal of the thermocouple 12 fixed inside the cement 7, and this electromotive voltage should be measured. Thus, the temperature of the substrate 1 is measured.
【0004】[0004]
【発明が解決しようとする課題】従来の技術では、熱電
対12がセメント7によって固定されているので、基板
1と熱電対12との接触状態が一定ではなく、特に短時
間の加熱冷却プロセス時には、接触状態の差により温度
表示が異なるという問題点があった。又、基板面内の複
数点で測定する場合、熱電対を取り付けるスペースが大
きい為、多点の同時測定が不能であった。In the prior art, since the thermocouple 12 is fixed by the cement 7, the contact state between the substrate 1 and the thermocouple 12 is not constant, especially during a heating / cooling process for a short time. However, there is a problem that the temperature display differs depending on the contact state. Further, when measuring at a plurality of points on the substrate surface, it is impossible to simultaneously measure at a plurality of points because the space for mounting the thermocouple is large.
【0005】この発明は、上記の問題点を解決するため
になされたもので、熱電対と基板の接触状態の差による
温度表示の誤差をなくし、また、基板内の多点箇所の同
時測定を可能にすることを目的としている。The present invention has been made to solve the above problems, eliminates the error of temperature display due to the difference in the contact state between the thermocouple and the substrate, and allows simultaneous measurement at multiple points in the substrate. It is intended to be possible.
【0006】[0006]
【課題を解決するための手段】この発明に係る温度検出
器付き基板は、熱電対を構成する一対の薄膜状の金属部
材からなる温度検出器を基板上に配置したものである。
また、温度検出器として薄膜状の測温抵抗体を基板上に
形成したものである。また、基板上の複数箇所に温度検
出器をそれぞれ設けたものである。A substrate with a temperature detector according to the present invention has a temperature detector made of a pair of thin-film metal members forming a thermocouple arranged on the substrate.
Further, a thin film resistance temperature detector is formed on the substrate as a temperature detector. In addition, temperature detectors are provided at a plurality of locations on the substrate.
【0007】[0007]
【作用】この発明における温度検出器付き基板は、薄膜
状の熱電対の起電力で基板の温度を検出する。また、測
温抵抗体の抵抗値により、基板の温度を検出する。ま
た、複数個の薄膜上の熱電対または測温抵抗体で複数箇
所の基板の温度を検出する。The substrate with a temperature detector according to the present invention detects the temperature of the substrate by the electromotive force of a thin film thermocouple. Further, the temperature of the substrate is detected by the resistance value of the resistance temperature detector. Further, the temperature of the substrate at a plurality of locations is detected by thermocouples or resistance temperature detectors on the plurality of thin films.
【0008】[0008]
実施例1.以下、この発明の実施例を図について説明す
る。図1において、1は半導体の基板、2は基板1上に
形成された薄膜状の絶縁部材、3は薄膜状の異種の金属
部材31、32を接触部33で接合して、絶縁部材2上
に配置して構成した熱電対である。ここで熱電対3は接
触部33のゼーベック効果によって基板1の温度に応じ
た起電力を発生する。4は薄膜化した熱電対3を保護す
るための保護膜、5は薄膜化した熱電対3の端部に設け
られたパッド部、6はこのパッド部5に溶着された熱電
対素線、7は熱電対素線6を固定するセメントである。Example 1. Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, 1 is a semiconductor substrate, 2 is a thin film-shaped insulating member formed on the substrate 1, 3 is a thin film-shaped dissimilar metal member 31, 32 joined at a contact portion 33, It is a thermocouple that is configured by arranging. Here, the thermocouple 3 generates an electromotive force according to the temperature of the substrate 1 due to the Seebeck effect of the contact portion 33. Reference numeral 4 is a protective film for protecting the thinned thermocouple 3, 5 is a pad portion provided at an end of the thinned thermocouple 3, 6 is a thermocouple element wire welded to the pad portion, 7 Is a cement for fixing the thermocouple wire 6.
【0009】次に動作を説明する。基板1が加熱される
と、薄膜状の熱電対3の接触部33にてゼーベック効果
により起電力が発生する。この起電力を熱電対素線6で
基板外に取り出し、起電圧を測定することにより基板1
の温度を測定することがてきる。Next, the operation will be described. When the substrate 1 is heated, an electromotive force is generated by the Seebeck effect at the contact portion 33 of the thin film thermocouple 3. This electromotive force is taken out of the substrate by the thermocouple element 6 and the electromotive force is measured to obtain the substrate 1
It is possible to measure the temperature of.
【0010】実施例2.上記実施例1では、薄膜状の熱
電対を用いたが、薄膜状の測温抵抗体を用いてもよい。
図3は薄膜にする測温抵抗体の材料の一例を示したもの
で、熱処理温度によって材料の電気特性が変化する材料
(図3はWSi2膜の例)を用い、その電気特性を測定し
ても同様の効果が得られる。Embodiment 2. Although the thin film thermocouple is used in the first embodiment, a thin film resistance temperature detector may be used.
FIG. 3 shows an example of the material of the resistance temperature detector which is made into a thin film. The material whose electric characteristic changes depending on the heat treatment temperature (FIG. 3 shows an example of the WSi2 film) is used to measure the electric characteristic. Also has the same effect.
【0011】図2はこの実施例を示したもので、8は薄
膜状に形成された測温抵抗体、9は薄膜状の測温抵抗体
8の電気特性を外部から測定するための耐熱導電体であ
る。基板1が熱処理される場合、薄膜状の測温抵抗体8
の電気特性(この場合抵抗値)の変化から基板1の加熱
温度を求めることができる。FIG. 2 shows this embodiment, in which 8 is a resistance thermometer formed in a thin film shape, and 9 is a heat-resistant conductive material for externally measuring the electric characteristics of the thin film resistance thermometer element 8. It is the body. When the substrate 1 is heat-treated, a thin film resistance temperature detector 8
The heating temperature of the substrate 1 can be obtained from the change in the electrical characteristics (in this case, the resistance value).
【0012】実施例3.実施例2の変形例として、熱処
理を行うことによって電気特性が変化し、且つ、その特
性が常温になるまで冷却されてもその特性が変化しない
材料を用いた場合、熱処理後にその電気特性を計測して
も同様の効果が得られる。Embodiment 3. As a modified example of the second embodiment, when a material whose electric characteristics are changed by heat treatment and whose characteristics are not changed even when the characteristics are cooled to room temperature is used, the electric characteristics are measured after the heat treatment. Even if the same effect is obtained.
【0013】図4はこの実施例を示し、10は熱処理時
の加熱温度に応じた電気特性を保持する材料を用いた薄
膜状の測温抵抗体で、熱処理後に冷却された後パッド部
5に測定器の針を当てて薄膜の電気特性を計測し処理温
度を測定する。FIG. 4 shows this embodiment, and 10 is a thin film resistance temperature detector made of a material that retains electric characteristics according to the heating temperature during heat treatment. The processing temperature is measured by touching the needle of the measuring instrument and measuring the electrical characteristics of the thin film.
【0014】実施例4.実施例2と3において、測温抵
抗体8と10は直線的にパターニングしたが、図5に示
すように、ジグザク状の測温抵抗体11を形成してもよ
い。この場合測温抵抗体11の電気特性の変化の差が大
きくなり測定感度を上げることができる。Example 4. In the second and third embodiments, the resistance temperature detectors 8 and 10 are linearly patterned, but a zigzag resistance temperature detector 11 may be formed as shown in FIG. In this case, the difference in change in the electrical characteristics of the resistance temperature detector 11 becomes large, and the measurement sensitivity can be increased.
【0015】実施例5.上記の実施例では、1個の温度
検出器を形成するようにしたが、複数個の温度検出器を
形成することによって基板上の多くの点の温度を同時に
検出することができる。Example 5. In the above embodiment, one temperature detector is formed, but by forming a plurality of temperature detectors, the temperatures at many points on the substrate can be detected at the same time.
【0016】[0016]
【発明の効果】以上のように、この発明によれば基板上
に薄膜状の温度検出器を形成するようにしたので、基板
と温度を検出する部分との接触状態が一定になり、精度
の高い安定した温度測定ができる。又、薄膜化すると温
度検出部分の面積を小さくできるので、基板上の多数箇
所の温度測定が容易にできる効果がある。As described above, according to the present invention, since the thin-film temperature detector is formed on the substrate, the contact state between the substrate and the portion for detecting the temperature becomes constant, and the accuracy is improved. Highly stable temperature measurement is possible. Further, if the film is thinned, the area of the temperature detecting portion can be reduced, so that it is possible to easily measure the temperature at many points on the substrate.
【図1】この発明の実施例1を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of the present invention.
【図2】この発明の実施例2を示す斜視図である。FIG. 2 is a perspective view showing a second embodiment of the present invention.
【図3】この発明の実施例2の電気特性を示す特性図で
ある。FIG. 3 is a characteristic diagram showing electrical characteristics of Example 2 of the present invention.
【図4】この発明の実施例3を示す斜視図である。FIG. 4 is a perspective view showing a third embodiment of the present invention.
【図5】この発明の実施例4を示す斜視図である。FIG. 5 is a perspective view showing a fourth embodiment of the present invention.
【図6】従来の温度検出器付き基板の斜視図である。FIG. 6 is a perspective view of a conventional substrate with a temperature detector.
1 基板 3 熱電対 4 保護膜 7 セメント 8 測温抵抗体 1 Substrate 3 Thermocouple 4 Protective film 7 Cement 8 Resistance temperature detector
Claims (3)
一対の薄膜状の金属部材からなる熱電対を有する温度検
出器を備え、この温度検出器の熱電対の起電力によって
上記基板の温度を検出するようにしたことを特徴とする
温度検出器付き基板。1. A semiconductor substrate, and a temperature detector having a thermocouple composed of a pair of thin-film metal members arranged on the substrate, the temperature of the substrate being generated by the electromotive force of the thermocouple of the temperature detector. A substrate with a temperature detector, which is configured to detect temperature.
薄膜状の測温抵抗体を有する温度検出器を備え、この温
度検出器の測温抵抗体の電気特性の変化によって上記基
板の温度を検出するようにしたことを特徴とする温度検
出器付き基板。2. A semiconductor substrate, comprising a temperature detector having a thin film resistance temperature detector arranged on the substrate, wherein the temperature of the substrate is changed by a change in electric characteristics of the resistance temperature detector of the temperature detector. A substrate with a temperature detector, which is configured to detect temperature.
をそれぞれ設け、上記基板の複数箇所の温度を検出する
ようにしたことを特徴とする請求項1または請求項2記
載の温度検出器付き基板。3. The temperature detector according to claim 1, wherein temperature detectors are provided at a plurality of locations on the semiconductor substrate, respectively, to detect temperatures at a plurality of locations on the substrate. Substrate with.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22131092A JPH0666643A (en) | 1992-08-20 | 1992-08-20 | Substrate with temperature detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22131092A JPH0666643A (en) | 1992-08-20 | 1992-08-20 | Substrate with temperature detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0666643A true JPH0666643A (en) | 1994-03-11 |
Family
ID=16764799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22131092A Pending JPH0666643A (en) | 1992-08-20 | 1992-08-20 | Substrate with temperature detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0666643A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6676289B2 (en) * | 2000-08-22 | 2004-01-13 | Kabushiki Kaisha Toshiba | Temperature measuring method in pattern drawing apparatus |
JP2006292703A (en) * | 2005-04-05 | 2006-10-26 | Yoshinobu Abe | Thermocouple |
CN100389308C (en) * | 2004-05-26 | 2008-05-21 | 鸿富锦精密工业(深圳)有限公司 | Chip temperature measurement device and method |
DE102015115956B3 (en) * | 2015-09-22 | 2017-02-23 | Universität Stuttgart | Temperature measuring device and method for its production |
WO2021237602A1 (en) * | 2020-05-28 | 2021-12-02 | 南昌欧菲显示科技有限公司 | Thin film type thermocouple, temperature sensor, and intelligent wearable device |
-
1992
- 1992-08-20 JP JP22131092A patent/JPH0666643A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6676289B2 (en) * | 2000-08-22 | 2004-01-13 | Kabushiki Kaisha Toshiba | Temperature measuring method in pattern drawing apparatus |
CN100389308C (en) * | 2004-05-26 | 2008-05-21 | 鸿富锦精密工业(深圳)有限公司 | Chip temperature measurement device and method |
JP2006292703A (en) * | 2005-04-05 | 2006-10-26 | Yoshinobu Abe | Thermocouple |
JP4671752B2 (en) * | 2005-04-05 | 2011-04-20 | 可伸 安部 | thermocouple |
DE102015115956B3 (en) * | 2015-09-22 | 2017-02-23 | Universität Stuttgart | Temperature measuring device and method for its production |
WO2021237602A1 (en) * | 2020-05-28 | 2021-12-02 | 南昌欧菲显示科技有限公司 | Thin film type thermocouple, temperature sensor, and intelligent wearable device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6084174A (en) | Method for detecting temperature gradients in biological tissue using a thermocouple array | |
JP3937191B2 (en) | Semiconductor chemical sensor element and method for forming thermocouple for semiconductor chemical sensor element | |
US20020085615A1 (en) | Differential scanning calorimeter | |
JPS63243885A (en) | Flow velocity detector | |
JP4243540B2 (en) | Sensor component with sensor element surrounded by a heating element | |
US3232113A (en) | Thermal parameter indicator | |
US6863438B2 (en) | Microstructured thermosensor | |
JPH0666643A (en) | Substrate with temperature detector | |
US20200049647A1 (en) | Sensor Device and Electronic Assembly | |
US4166390A (en) | Scanning radiometer apparatus | |
JPH0194218A (en) | Thermal flow rate detector | |
US6437331B1 (en) | Bolometer type infrared sensor with material having hysterisis | |
JPS61259580A (en) | Thermopile | |
JP3300110B2 (en) | Gas detector | |
JP2000055743A (en) | Multi-point mean temp. measuring apparatus | |
JP3345695B2 (en) | Acceleration sensor | |
JPH075050A (en) | Temperature sensor | |
JPH11258040A (en) | Thermopile type infrared ray sensor | |
KR20240174589A (en) | Resistance Temperature Detector using silicon carbide | |
JPH0583852B2 (en) | ||
JPH0584867B2 (en) | ||
JP7599930B2 (en) | Sensors and Systems | |
JP2018141664A (en) | Flow sensor | |
JPH07140008A (en) | Radiation thermometer | |
JPH0634448A (en) | Radiation thermometer |