JPH0663772A - Resistance diffusion joining method - Google Patents
Resistance diffusion joining methodInfo
- Publication number
- JPH0663772A JPH0663772A JP21528992A JP21528992A JPH0663772A JP H0663772 A JPH0663772 A JP H0663772A JP 21528992 A JP21528992 A JP 21528992A JP 21528992 A JP21528992 A JP 21528992A JP H0663772 A JPH0663772 A JP H0663772A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- joining
- plating layer
- bonding
- joining member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 claims abstract description 31
- 239000010949 copper Substances 0.000 claims abstract description 31
- 238000007747 plating Methods 0.000 claims abstract description 30
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052718 tin Inorganic materials 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 239000011574 phosphorus Substances 0.000 claims abstract description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 30
- 229910052742 iron Inorganic materials 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 25
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 abstract 3
- 238000010587 phase diagram Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 3
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 3
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、鉄系接合部材と銅−亜
鉛系接合部材とをめっき層を介して接合する抵抗拡散接
合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance diffusion bonding method for bonding an iron-based bonding member and a copper-zinc-based bonding member via a plating layer.
【０００２】[0002]
【従来の技術】従来、鉄系接合部材と銅−亜鉛系接合部
材とを接合するにはその鉄系接合部材表面のぬれ性を改
善させるためにそれら接合部材間に銅めっき層，銅−亜
鉛めっき層等の銅系めっき層を介在させて、すなわち前
記鉄系接合部材に銅系めっきを施して、これら接合部材
を例えばろう材を介して抵抗拡散接合させる技術が提案
されている。このような抵抗拡散接合によれば、前記鉄
系接合部材と銅−亜鉛系接合部材とが短時間（約１ｓｅ
ｃ）で強固に接合される。2. Description of the Related Art Conventionally, for joining an iron-based joining member and a copper-zinc based joining member, in order to improve the wettability of the surface of the iron-based joining member, a copper plating layer, a copper-zinc layer are provided between the joining members. A technique has been proposed in which a copper-based plating layer such as a plating layer is interposed, that is, the iron-based bonding member is subjected to copper-based plating, and these bonding members are resistance diffusion bonded via a brazing material, for example. According to such resistance diffusion bonding, the iron-based bonding member and the copper-zinc-based bonding member are short-time (about 1 se).
It is firmly joined in c).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、前述さ
れた抵抗拡散接合方法では、短時間で接合強度の高い接
合はできるが、鉄系接合部材と銅−亜鉛系接合部材との
線膨張係数の差が大きいためそれら鉄系接合部材と銅−
亜鉛系接合部材とが接合されて形成された接合材は接合
工程あるいは接合工程後の熱処理工程において接合面か
ら図２に示されているように剥離することがある。特
に、前記接合部材間に銅めっき層を介在させた場合は前
記熱処理工程において前記接合材を油中で冷却する際、
この油中に含有される硫黄によりその接合材が腐触され
る所謂サルファアタックが発生してその接合材が前記接
合面から剥離する。したがって、前記接合材の欠陥率
（接合材が接合面から剥離する頻度）が高くなるという
問題点がある。However, in the resistance diffusion bonding method described above, high strength bonding can be achieved in a short time, but the difference in the coefficient of linear expansion between the iron-based bonding member and the copper-zinc-based bonding member. Because of the large
The joining material formed by joining the zinc-based joining member may be separated from the joining surface as shown in FIG. 2 in the joining step or the heat treatment step after the joining step. In particular, when a copper plating layer is interposed between the joining members, when the joining material is cooled in oil in the heat treatment step,
The sulfur contained in the oil causes a so-called sulfur attack in which the joining material is corroded, and the joining material is separated from the joining surface. Therefore, there is a problem that the defect rate of the bonding material (frequency of peeling of the bonding material from the bonding surface) increases.
【０００４】本発明は、以上のような問題点に鑑みてな
されたものであって、鉄系接合部材と銅−亜鉛系接合部
材とが銅系めっき層を介して接合されて形成される接合
材の接合部の剥離を抑止する抵抗拡散接合方法を提供す
ることを目的とする。The present invention has been made in view of the above problems, and is a bond formed by bonding an iron-based bonding member and a copper-zinc-based bonding member via a copper-based plating layer. An object of the present invention is to provide a resistance diffusion bonding method that suppresses peeling of a bonded portion of a material.
【０００５】[0005]
【課題を解決するための手段】本発明による抵抗拡散接
合方法は、鉄系接合部材と銅−亜鉛系接合部材とを銅系
めっき層を介して接合する抵抗拡散接合方法において、
前記銅系めっき層はその銅系めっき層の重量に対して、
０を越えて１５．８％以下の錫、０を越えて９．４％以
下のアルミニウム、０を越えて１．７５％以下のリン、
０を越えて１．５％以下のクロム、０を越えて２．７％
以下のベリリウム、０を越えて５．３％以下の珪素のう
ち少なくとも一つを含有することを特徴とする。The resistance diffusion bonding method according to the present invention is a resistance diffusion bonding method for bonding an iron-based bonding member and a copper-zinc-based bonding member via a copper-based plating layer,
The copper-based plating layer, relative to the weight of the copper-based plating layer,
0 to 15.8% or less tin, 0 to 9.4% or less aluminum, 0 to 1.75% or less phosphorus,
Chromium exceeding 0 and less than 1.5%, exceeding 0 and 2.7%
It is characterized by containing at least one of the following beryllium and silicon exceeding 0 and 5.3% or less.
【０００６】[0006]
【作用】銅−錫状態図（図３），銅−アルミニウム状態
図（図４），銅−リン状態図（図５），銅−クロム状態
図（図６），銅−ベリリウム状態図（図７）および銅−
珪素状態図（図８）からも明らかなように、０を越えて
１５．８ｗｔ％以下の錫を含有する銅−錫合金，０を越
えて９．４ｗｔ％以下のアルミニウムを含有する銅−ア
ルミニウム合金，０を越えて１．７５ｗｔ％以下のリン
を含有する銅−リン合金，０を越えて１．５ｗｔ％以下
のクロムを含有する銅−クロム合金，０を越えて２．７
ｗｔ％以下のベリリウムを含有する銅−ベリリウム合金
および０を越えて５．３ｗｔ％以下の珪素を含有する銅
−珪素合金は通常α相を形成している。このため、前記
数値範囲の錫，アルミニウム，リン，クロム，ベリリウ
ム，珪素のうち少なくとも一つを含有する銅合金は軟ら
かくなる。Function: Copper-tin phase diagram (Fig. 3), copper-aluminum phase diagram (Fig. 4), copper-phosphorus phase diagram (Fig. 5), copper-chromium phase diagram (Fig. 6), copper-beryllium phase diagram (Fig. 7) and copper-
As is clear from the silicon phase diagram (FIG. 8), a copper-tin alloy containing more than 0 and 15.8 wt% or less tin, a copper-aluminum containing more than 0 and 9.4 wt% or less aluminum. Alloy, copper-phosphorus alloy containing more than 0 and not more than 1.75 wt% phosphorus, copper-chromium alloy containing more than 0 and not more than 1.5 wt% chromium, and more than 0 to 2.7.
Copper-beryllium alloys containing less than wt% beryllium and copper-silicon alloys containing more than 0 and less than 5.3 wt% silicon usually form the α phase. Therefore, the copper alloy containing at least one of tin, aluminum, phosphorus, chromium, beryllium, and silicon within the above numerical range becomes soft.
【０００７】したがって、本発明による抵抗拡散接合方
法に適用される銅系めっき層にはその銅系めっき層の重
量に対して０を越えて１５．８％以下の錫，０を越えて
９．４％以下のアルミニウム，０を越えて１．７５％以
下のリン，０を越えて１．５％以下のクロム，０を越え
て２．７％以下のベリリウム，０を越えて５．３％以下
の珪素のうち少なくとも一つが含有されているため、こ
の銅系めっき層により接合工程および熱処理工程におい
て生じる熱応力がα相により緩和される。この結果、鉄
系接合部材と銅−亜鉛系接合部材とが接合されて形成さ
れる接合材の接合部における剥離が抑止される。Therefore, in the copper-based plating layer applied to the resistance diffusion bonding method according to the present invention, the weight of the copper-based plating layer is more than 0 and not more than 15.8% tin, and more than 0 and more than 9. Aluminum below 4%, phosphorus above 0 to 1.75%, chromium above 0 to 1.5%, chromium above 0 to 2.7% beryllium, above 0 to 5.3% Since at least one of the following silicon is contained, the α-phase relaxes the thermal stress generated in the joining step and the heat treatment step by the copper-based plating layer. As a result, peeling of the joining material formed by joining the iron-based joining member and the copper-zinc based joining member at the joining portion is suppressed.
【０００８】[0008]
【実施例】次に、本発明による抵抗拡散接合方法の具体
的一実施例について図１に示されている接合材の層構成
に基づいて説明する。この抵抗拡散接合方法によれば、
鉄系接合部材としての第一の接合部材１１の銅−亜鉛系
接合部材としての第二の接合部材１２との接合面に例え
ば錫を含有する銅系めっき層１３（組成比；銅：８７，
亜鉛：５，錫：８、膜厚約３０μｍ）が施された後、こ
れら第一の接合部材１１と第二の接合部材１２とがろう
材１４を介して抵抗拡散接合される。この抵抗拡散接合
では、第一の接合部材１１と第二の接合部材１２とが３
ｔ／ｃｍ2 の荷重で加圧されつつ大気中で短時間通電
（６５ｋＡ，５５ｃｙｃｌｅｓ（約０．９２ｓｅｃ））
される。この結果、第一の接合部材１１と第二の接合部
材１２とが接合されて、この接合された接合材１５が油
中で冷却される。EXAMPLE Next, a specific example of the resistance diffusion bonding method according to the present invention will be described based on the layer structure of the bonding material shown in FIG. According to this resistance diffusion bonding method,
A copper-based plating layer 13 containing, for example, tin (composition ratio: copper: 87, on the joint surface of the first joining member 11 as an iron-based joining member with the second joining member 12 as a copper-zinc-based joining member).
After applying zinc: 5, tin: 8, and a film thickness of about 30 μm), the first bonding member 11 and the second bonding member 12 are resistance diffusion bonded via the brazing material 14. In this resistance diffusion joining, the first joining member 11 and the second joining member 12 are joined together by 3
Energized for a short time in the atmosphere while being pressurized with a load of t / cm 2 (65 kA, 55 cycles (about 0.92 sec))
To be done. As a result, the first joining member 11 and the second joining member 12 are joined, and the joined joining material 15 is cooled in oil.
【０００９】なお、第一の接合部材１１は、例えば材質
がＪＩＳに定められるＳＣＭ４４０Ｈ（組成比；炭素：
０．３７〜０．４４，珪素：０．１５〜０．３５，マン
ガン：０．５５〜０．９０，クロム：０．８５〜１．２
５，モリブデン：０．１５〜０．３３，リン≦０．０３
０，硫黄≦０．０３０，鉄：残余）により形成されてい
る。第二の接合部材１２は、例えばＰ３１Ｃ（組成比；
亜鉛：２７．５，アルミニウム：３．８，ニッケル：
３．０，珪素：０．８，鉄：０．７，コバルト：０．
６，銅：残余）により形成されている。また、ろう材１
４は銅：８０，錫：２０の組成を有する。The first joining member 11 is, for example, SCM440H (composition ratio; carbon:
0.37-0.44, Silicon: 0.15-0.35, Manganese: 0.55-0.90, Chromium: 0.85-1.2
5, molybdenum: 0.15 to 0.33, phosphorus ≦ 0.03
0, sulfur ≦ 0.030, iron: balance). The second joining member 12 is, for example, P31C (composition ratio;
Zinc: 27.5, Aluminum: 3.8, Nickel:
3.0, silicon: 0.8, iron: 0.7, cobalt: 0.
6, copper: the rest). Also, brazing material 1
4 has a composition of copper: 80 and tin: 20.
【００１０】このようにして本発明の抵抗拡散接合方法
により接合された接合材（本実施例）と、従来の抵抗拡
散接合方法により接合された接合材（比較例Ａ，比較例
Ｂ）とについて、銅系めっき層の組成とその接合材の性
能（腐触性）および欠陥率が表１に示されている。な
お、比較例Ａおよび比較例Ｂの接合材は本実施例の接合
材と同条件で接合，熱処理されている。Regarding the bonding material (this embodiment) bonded by the resistance diffusion bonding method of the present invention as described above, and the bonding material (comparative examples A and B) bonded by the conventional resistance diffusion bonding method. Table 1 shows the composition of the copper-based plating layer, the performance (corrosion) of the bonding material, and the defect rate. The bonding materials of Comparative Example A and Comparative Example B were bonded and heat-treated under the same conditions as the bonding material of this example.
【００１１】[0011]
【表１】 [Table 1]
【００１２】この結果によれば、本実施例における接合
材はサルファアタックが発生することなく耐触性に優れ
ているとともに、欠陥率も従来の接合材に比べて低い。
この結果は次のような原因に基づくものと考えられる。According to this result, the joining material in this example has excellent contact resistance without the occurrence of sulfur attack and has a lower defect rate than the conventional joining materials.
This result is considered to be based on the following causes.
【００１３】銅系めっき層１３にはその銅系めっき層１
３の重量に対して０を越えて１５．８％以下（本実施例
においては８％）の錫が含有されているため、この銅系
めっき層１３はα相により軟らかくなる。したがって、
この銅系めっき層１３により接合工程および熱処理工程
において第一の接合部材１１と第二の接合部材１２との
接合部に生じる熱応力が緩和される。The copper-based plating layer 13 has the copper-based plating layer 1
Since more than 0 and 15.8% or less (8% in this embodiment) of tin is contained with respect to the weight of 3, the copper-based plating layer 13 becomes soft due to the α phase. Therefore,
The copper-based plating layer 13 relaxes the thermal stress generated at the joint between the first joining member 11 and the second joining member 12 in the joining process and the heat treatment process.
【００１４】なお、本実施例においては銅系めっき層と
してその銅系めっき層の重量に対して８％の錫が含有さ
れたものを用いて抵抗拡散接合を行っているが、０を越
えて９．４％以下のアルミニウム，０を越えて１．７５
％以下のリン，０を越えて１．５％以下のクロム，０を
越えて２．７％以下のベリリウム，０を越えて５．３％
以下の珪素のうち少なくとも一つが含有されたものを用
いてもよい。In this embodiment, resistance diffusion bonding is performed using a copper-based plating layer containing 8% tin with respect to the weight of the copper-based plating layer. Aluminum below 9.4%, above 1.75.
% Phosphorus or less, 0 to 1.5% or less chromium, 0 to 2.7% or less beryllium, 0 to 5.3%
You may use what contained at least one of the following silicon.
【００１５】[0015]
【発明の効果】以上のように構成された本発明によれ
ば、鉄系接合部材と銅−亜鉛系接合部材とが銅系めっき
層を介して接合されて形成される接合材の接合部の剥離
を抑止することができる。EFFECTS OF THE INVENTION According to the present invention configured as described above, the joining portion of the joining material formed by joining the iron-based joining member and the copper-zinc-based joining member through the copper-based plating layer is formed. Peeling can be suppressed.
【図１】本発明の一実施例の抵抗拡散接合方法により接
合される接合材の層構成図である。FIG. 1 is a layer configuration diagram of a joining material joined by a resistance diffusion joining method according to an embodiment of the present invention.
【図２】銅系材料と鉄系材料との剥離状態を示す図であ
る。FIG. 2 is a diagram showing a peeled state of a copper-based material and an iron-based material.
【図３】銅−錫状態図である。FIG. 3 is a copper-tin phase diagram.
【図４】銅−アルミニウム状態図である。FIG. 4 is a copper-aluminum phase diagram.
【図５】銅−リン状態図である。FIG. 5 is a copper-phosphorus phase diagram.
【図６】銅−クロム状態図である。FIG. 6 is a copper-chromium phase diagram.
【図７】銅−ベリリウム状態図である。FIG. 7 is a copper-beryllium phase diagram.
【図８】銅−珪素状態図である。FIG. 8 is a copper-silicon phase diagram.
１１ 第一の接合部材（鉄系接合部材） １２ 第二の接合部材（銅−亜鉛系接合部材） １３ 銅系めっき層 11 First Joining Member (Iron-Based Joining Member) 12 Second Joining Member (Copper-Zinc-Based Joining Member) 13 Copper-Based Plating Layer
Claims (1)
銅系めっき層を介して接合する抵抗拡散接合方法におい
て、 前記銅系めっき層はその銅系めっき層の重量に対して、
０を越えて１５．８％以下の錫、０を越えて９．４％以
下のアルミニウム、０を越えて１．７５％以下のリン、
０を越えて１．５％以下のクロム、０を越えて２．７％
以下のベリリウム、０を越えて５．３％以下の珪素のう
ち少なくとも一つを含有することを特徴とする抵抗拡散
接合方法。1. A resistance diffusion bonding method for bonding an iron-based bonding member and a copper-zinc-based bonding member via a copper-based plating layer, wherein the copper-based plating layer is relative to the weight of the copper-based plating layer.
0 to 15.8% or less tin, 0 to 9.4% or less aluminum, 0 to 1.75% or less phosphorus,
Chromium exceeding 0 and less than 1.5%, exceeding 0 and 2.7%
A resistance diffusion bonding method comprising at least one of the following beryllium and silicon exceeding 0 and 5.3% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21528992A JP3199473B2 (en) | 1992-08-12 | 1992-08-12 | Resistance diffusion bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21528992A JP3199473B2 (en) | 1992-08-12 | 1992-08-12 | Resistance diffusion bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0663772A true JPH0663772A (en) | 1994-03-08 |
| JP3199473B2 JP3199473B2 (en) | 2001-08-20 |
Family
ID=16669860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21528992A Expired - Fee Related JP3199473B2 (en) | 1992-08-12 | 1992-08-12 | Resistance diffusion bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3199473B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987002818A1 (en) * | 1985-10-28 | 1987-05-07 | Matsushita Electric Industrial Co., Ltd. | Data recording/regenerating device |
-
1992
- 1992-08-12 JP JP21528992A patent/JP3199473B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987002818A1 (en) * | 1985-10-28 | 1987-05-07 | Matsushita Electric Industrial Co., Ltd. | Data recording/regenerating device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3199473B2 (en) | 2001-08-20 |
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