JPH0660152U - Monolithic integrated circuit device - Google Patents

Abstract

(57) [Abstract] [Purpose] A monolithic device that suppresses the variation in resistance value by suppressing the combined resistance of the target resistance and the series-connected resistance within the required range, and also absorbs the variation in the diode that is the active element. To provide an integrated circuit device. In a monolithic integrated circuit, a series connection circuit of an active element and a resistor is connected in parallel to at least one of a plurality of resistors connected in series, and a connection point between the active element and the resistor forms a zapping terminal, By destructive short-circuiting the active element via the zapping terminal, the combined resistance value of the plurality of resistors is made variable.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a monolithic integrated circuit device. More specifically, the present invention relates to a monolithic integrated circuit device in which an active element connected in parallel with a resistor is appropriately short-circuited to change the combined resistance value of the resistor connected in series. Regarding the improvement of circuit devices.

[0002]

[Prior art]

 The applicant of the present application has already applied for this type of monolithic integrated circuit device as Japanese Patent Application No. 2-79843, and the present invention relates to this improvement. FIG. 2 shows a power supply voltage monitoring circuit using this monolithic integrated circuit device. Resistors R15 and R11 to R14 for dividing the voltage of the power supply Vcc are connected to the input of the comparator constituted by the transistors Q21 and Q22. This comparator circuit is designed to turn on and off at a certain power supply voltage set by a voltage dividing resistor to output switching, and is used as a power supply voltage monitoring circuit that monitors fluctuations in the power supply voltage. It is used.

The threshold voltage at which the comparator turns on and off is determined by the resistors R15 and R11 to R14. For example, if the power supply voltage at that time is 4.5V, the operating range of on and off is 4.5V ± 0. It was required to switch within the range of 0.2V. In recent years, however, the functions of electronic devices have become more complex and more sophisticated, and there has been a demand for a smaller operating voltage range for switching. Therefore, the applicant of the present application changes the combined resistance value of a plurality of resistors by connecting an active element in parallel to at least one of a plurality of resistors connected in series and destructively shorting the active element (called zapping). We proposed a monolithic integrated circuit device. Note that G is a gate circuit and I is a constant current source.

[0004]

However, in such a conventional circuit configuration, variations in the resistance values R11 to R14 are absorbed, but the variations in the diodes D11 and D12, which are active elements, are not sufficient, There was a limit to the narrowing of the operating range. That is, for example, when the diode D11 which is an active element is zapping, the combined resistance RA between the bases of the transistors Q21 and Q22 is RD1 when the resistance of the diode D11 after zapping is RD1.

[0005]

[Equation 1]

[0006] Therefore, since the diode D11 has a large variation in component accuracy, the synthetic resistance RA is greatly affected by the influence of the diode D1 and a large variation occurs, but it is desired to develop a monolithic integrated circuit device that absorbs the variation in these diodes. Was there. An object of the present invention is to eliminate the above-mentioned conventional drawbacks, and it is an object of the present invention to provide a monolithic integrated circuit device with extremely high accuracy.

[0007]

[Means for Solving the Problems]

 In order to achieve this object, the present invention provides a monolithic integrated circuit in which a series connection circuit of an active element and a resistor is connected in parallel to at least one of a plurality of resistors connected in series, and the active element and the resistor are connected in parallel. It is characterized in that the connection point is made up of a zapping terminal, and the combined resistance value of the plurality of resistors is varied by destructively short-circuiting the active element via the zapping terminal.

[0008]

[Action]

 The resistor is short-circuited by the active element by breaking the active element through the zapping terminal in the series connection circuit of the active element and the resistor connected in parallel to the resistor, and the resistor R3 connected in series to this resistor. The combined resistance value with R4 can be reduced, and further, the resistors R7 and R8 of the series connection circuit can absorb the variation of the active element.

[0009]

【Example】

 Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 shows a reference voltage circuit 4 to which a monolithic integrated circuit device according to an embodiment of the present invention is applied. Transistors Q1 and Q2 form a first current mirror circuit, Q3 and Q4 form a second current mirror circuit, and their collector sides are connected to the collectors of transistors Q5 and Q6, respectively. The transistors Q5 and Q6 form a comparator with a differential amplifier circuit. The voltage supplied to the power supply terminal 1 (VCC) is divided by the resistors R2 to R6. The bases of the transistors Q5 and Q6, which are the input terminals of the comparator, are connected to both ends of resistors R3 and R4 connected in series. The output of the comparator is output between the output terminal 2 and the common terminal 3 (GND) from the collector of the transistor Q6 through the Darlington-connected transistors Q10 and Q11. Note that Q8 and Q9 form a current source.

The area surrounded by the alternate long and short dash line is the monolithic integrated circuit 5 formed of a semiconductor. ΔV is placed between the bases of this differential amplifier_BEHas an offset voltage of. Even if the voltage of the power supply terminal Vcc changes, the voltage across the resistors R3 and R4 is ΔV._BETherefore, the constant current I is applied to the resistors R3 and R4.₁Flows. Therefore, the voltage V of the output terminal 2 from which the reference voltage is output₂Is V₂= I₁(R2 + R3 + R4 + R5 + R6) + V_BE7Becomes V _BE7 Is the forward voltage between the base and emitter of Q7. A series connection circuit of a resistance R7 and a diode D1 and a series connection circuit of a resistance R8 and a diode D2 are connected to the resistances R4 and R5, respectively. P1 to P3 are zapping terminals derived from both ends of the resistors R4 and R5, respectively.

The high-precision reference voltage circuit 4 is formed so that the output voltage is output in the range of 1.25 ± 0.04V. The output voltage V ₂ may fall outside the target range due to variations in the manufacture of the respective resistance values. At this time, for the diode D1 or D2 connected in parallel to the resistor R4 or R5, a forward current to the diode D1 or D2 via the zapping terminals P1 and P2 or between P2 and P3 during zapping. (For example, 500 to 600 mA) is caused to flow to short-circuit the diode. As a result, the resistor R4 or R5 is short-circuited by the diode D1 or D2, the resistance value of the resistor R4 or R5 decreases between the nodes a and b or between b and c, and the combined resistance value between a and b and between b and c. Is adjusted.

When the diodes D4 and D5 are not destroyed and short-circuited, only a voltage of about 40 mV is applied to both ends of these diodes, and accordingly, the diodes are in the off state and the impedance is sufficiently high, which causes circuit operation. Has no effect. In the reference voltage circuit 4, when the output voltage is higher than a predetermined voltage, the diode D4 is destroyed and short-circuited. Conversely, when the output voltage is lower than the predetermined voltage, the diode D5 is destroyed and short-circuited to 1.25 V ± 0 respectively. The diode is selectively broken and short-circuited so that a constant voltage is output within the range of 0.04V.

As described above, when the semiconductor resistor requires a variation accuracy higher than the manufacturing variation range, the resistor R4 or R5 is connected in series to the target resistor R3 or R6, and the diode D1 or D2 is connected thereto. It is possible to easily improve the variation accuracy by connecting and shorting them appropriately. In addition, it is possible to further improve the accuracy by connecting a plurality of short-circuiting resistors connected in series in series and selectively short-circuiting them appropriately.

On the other hand, according to the configuration of the present invention, when the diode D1 which is an active element is zapped, for example, the combined resistance RA ′ between the bases of the transistors Q5 and Q6 is the resistance of the diode D1 after the zap. RD1

[0015]

[Equation 2]

[0016] Therefore, since the resistor R7 is inserted and connected in series with the resistor RD1, even if the diode D1 has a variation, it is not affected by only the diode, and the variation can be greatly reduced as compared with the conventional circuit.

[0017]

[Effect of device]

 As is clear from the above description, the present invention can keep the combined resistance of the target resistance and the series-connected resistance within the required range with a simple configuration, and further, the variation of the diode which is the active element. Can also be absorbed, so that it is possible to obtain a highly accurate monolithic integrated circuit device with an extremely small operating voltage range for switching, and when applied to various electronic circuits, those characteristics can be improved. Have advantages.

[Brief description of drawings]

FIG. 1 is a circuit configuration diagram of a power supply voltage monitoring circuit to which a monolithic integrated circuit device according to an embodiment of the present invention is applied.

FIG. 2 is a circuit configuration diagram of a power supply voltage monitoring circuit to which a conventional monolithic integrated circuit device is applied.

[Explanation of symbols]

 1, 11 Power supply terminal (Vcc) 2, 12 Output terminal 3, 13 Common terminal (GND) 4 Constant voltage circuit 6 Power supply voltage monitoring circuit 5, 7 Monolithic integrated circuit device Q1 to Q11, Q21, Q22 Transistor R1 to R8, R11 -R17 resistance D1, D2, D11-D13 active element (diode) P1-P3, P11-P14 zapping terminal G gate circuit I constant current source

Claims (1)

[Scope of utility model registration request] 1. In a monolithic integrated circuit, a series connection circuit of an active element and a resistor is connected in parallel to at least one of a plurality of resistors connected in series, and a connection point between the active element and the resistor forms a zapping terminal. Then, the monolithic integrated circuit device is characterized in that the combined resistance value of the plurality of resistors is made variable by destructively short-circuiting the active element via the zapping terminal.