JPH0659453B2 - Method of applying resist to substrate - Google Patents
Method of applying resist to substrateInfo
- Publication number
- JPH0659453B2 JPH0659453B2 JP61130221A JP13022186A JPH0659453B2 JP H0659453 B2 JPH0659453 B2 JP H0659453B2 JP 61130221 A JP61130221 A JP 61130221A JP 13022186 A JP13022186 A JP 13022186A JP H0659453 B2 JPH0659453 B2 JP H0659453B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist
- coating
- ultraviolet irradiation
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0079—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は基板へのレジスト塗布方法に係り、特に角部な
どを有する基板の所定面に均一な膜厚の塗布層を容易に
形成しうるレジスト塗布方法に関する。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Industrial field of use) The present invention relates to a method for coating a resist on a substrate, and in particular, to a coating layer having a uniform film thickness on a predetermined surface of a substrate having corners and the like. The present invention relates to a resist coating method that can be easily formed.
(従来の技術) 例えば回路基板など所要のパターンを形成するに当って
フォトレジストをマスキング材として一般に使用してい
る。即ちフォトレジストを所定の基板面に塗布し、露
光,現像を施して所定のフォトレジストマスタ(パター
ン)を作成してからエッチング処理や蒸着処理を施すこ
とによって所望の回路パターンなどを形成している。と
ころで上記レジスト膜の塗布形成において、膜厚の薄い
塗布層を形成する場合、基板について純水洗浄或いは加
熱などの清浄化処理を施した後、一般にスピン塗布法
(回転塗布法)によりレジスト膜を塗布形成している。
しかし上記レジスト塗布においては膜厚の均一な塗膜を
形成し難く、特に基板が角部を有する場合、例えば一辺
250mmの正方形の基板に回転塗布法で塗布し、110℃で乾
燥を施して形成した塗膜についてその膜厚を測定したと
ころ第3図に示す如くであった。即ち辺方向については
いずれの点(a)も膜厚が1.2μmであったのに対して、角
方向における膜厚は中央寄りの点(b)が1.2μm、角側の
点(c)が2.3μm、点(d)が3.8μmで基板(1)中央部に較
べ角部の膜厚は3〜4倍であった。このように塗布膜に
ついて膜厚ムラが存在することは、例えばフォトレジス
ト塗布膜を形成し、露光,現像を施して所要のパターン
化を行なう場合について考えてみるとパターンの解像度
の低下などを伴ない精度の低下をもたらす。特に微細な
回路を角形基板などに形成したい場合、例えば液晶テレ
ビなど小型表示装置用の回路基板を製造する際において
は、上記レジスト膜の膜厚ムラは所定の回路パターンの
形成を妨げる要因となっている。このためレジスト塗布
層を大き目の基板に形成し所要寸法の角形基板を切り出
すなど煩雑な操作を要する。(Prior Art) A photoresist is generally used as a masking material in forming a desired pattern on a circuit board, for example. That is, a desired circuit pattern or the like is formed by applying a photoresist on a predetermined substrate surface, exposing and developing the photoresist to create a predetermined photoresist master (pattern), and then performing an etching process or a vapor deposition process. . By the way, in the case of forming a thin coating layer in the coating formation of the resist film described above, after the substrate is subjected to cleaning treatment such as pure water cleaning or heating, the resist film is generally formed by a spin coating method (spin coating method). It is formed by coating.
However, in the above resist coating, it is difficult to form a coating film having a uniform film thickness, especially when the substrate has corners, for example, one side
The thickness of the coating film formed by spin coating on a 250 mm square substrate and drying at 110 ° C. was as shown in FIG. That is, the film thickness was 1.2 μm at any point (a) in the side direction, whereas the film thickness in the corner direction was 1.2 μm at the point near the center and at the corner side (c). The thickness was 2.3 μm, the point (d) was 3.8 μm, and the film thickness at the corner portion was 3 to 4 times as large as that at the central portion of the substrate (1). Such unevenness of the film thickness of the coating film is accompanied by a decrease in pattern resolution when considering, for example, a case where a photoresist coating film is formed, and exposure and development are performed to form a desired pattern. There is no loss of accuracy. Especially when it is desired to form a fine circuit on a rectangular substrate, for example, when manufacturing a circuit substrate for a small display device such as a liquid crystal television, the uneven thickness of the resist film becomes a factor that hinders formation of a predetermined circuit pattern. ing. Therefore, a complicated operation such as forming a resist coating layer on a large substrate and cutting out a rectangular substrate having a required size is required.
(発明が解決しようとする問題点) 本発明は上記事情に対処して、基板に略均一な膜厚のレ
ジスト膜を容易に形成することのできる実用的なレジス
ト塗布方法を提供しようとするものである。(Problems to be Solved by the Invention) The present invention addresses the above circumstances and provides a practical resist coating method capable of easily forming a resist film having a substantially uniform film thickness on a substrate. Is.
(問題を解決するための手段) 本発明は、回転塗布法によって基板にレジストを塗布す
るに当って、予め基板に紫外線照射および加熱処理によ
る前処理を施した場合、レジストに対する基板の濡れ性
が著しく改善され、均一な塗膜が形成されることに着目
してなされたものである。即ち本発明は基板に回転塗布
法でレジスト膜を形成するに当り、予め基板のレジスト
塗布面に紫外線照射処理と同時または事前に加熱処理と
を施しておくことを要点とするものである。(Means for Solving the Problem) In the present invention, when a resist is applied to a substrate by a spin coating method, when the substrate is pretreated by ultraviolet irradiation and heat treatment, the wettability of the substrate with respect to the resist is improved. It was made paying attention to the fact that the coating film is remarkably improved and a uniform coating film is formed. That is, in the present invention, when forming a resist film on a substrate by a spin coating method, the main point is to subject the resist coating surface of the substrate to a heat treatment at the same time as the ultraviolet irradiation treatment or in advance.
(作用) 上記の如く基板の所定面(レジスト塗布面)について加
熱処理によって昇温化した状態下で紫外線照射処理を予
め施した場合には、その処理面の清浄化が効果的に行な
われ、もってレジストに対する濡れ性が改善される。か
くして回転塗布法にてレジストを塗布した場合、基板の
辺方向および角方向において膜厚ムラのみられない(膜
厚均一)塗膜が容易に且つ常に形成される。(Operation) When the predetermined surface of the substrate (resist coated surface) is subjected to the ultraviolet irradiation treatment in a state where the temperature is raised by the heating treatment as described above, the treated surface is effectively cleaned, Therefore, the wettability with respect to the resist is improved. Thus, when the resist is applied by the spin coating method, a coating film having no film thickness unevenness (uniform film thickness) is easily and constantly formed in the side direction and the corner direction of the substrate.
(実施例) 以下本発明の実施例を説明する。先ず厚さ1mm、辺の長
さ250mmの正方形のガラス製角形基板を用意し、この角
型基板を設定温度150〜200℃のホットプレート上に略水
平に載置する一方、65Wの低圧水銀ランプを紫外線源と
して120 秒間紫外線を角形基板面に照射した。かくして
角形基板について紫外線照射処理と加熱処理とを施し、
角形基板の所定面(レジスト塗布面)を清浄化した。次
いで第1図に示す如く、回転駆動機構(2)によって回転
する回転軸(3)に装着された真空チャック(4)にて、前記
角形基板(1b)を吸着支持させた。なおこの角形基板(1b)
の真空チャック(4)による吸着支持は前記基板(1b)の処
理面に対し反対側の面を真空チャック(4)側としてい
る。しかる後、上記真空チャック(4)にて支持された角
形基板(1b)の上面(処理面)の中心部に例えば粘度30cp
sのレジストを滴下し、続いて回転駆動機構(2)を駆動し
て真空チャック(4)に吸着支持されている角形基板(1b)
を回転させる。この角形基板(1b)の回転は例えば60r.p.
m程度の低速回転によって前記滴下してあるレジストを
角形基板(1b)面に先ず拡げ、次いで例えば3500r.p.m程
度の高速回転に切り換えて、上記レジストを回転による
遠心力で角形基板(1b)の外周縁方向へさらに拡げること
によって所要のレジスト塗布がなされる。第2図は上記
回転塗布後110℃で乾燥を施して形成したレジスト塗布
層の厚さの状態を示したもので辺方向および角方向とも
略均一な膜厚であった。なお第2図において点(a)は膜
厚1.2μm、点(a′)は膜厚1.3μmである。(Examples) Examples of the present invention will be described below. First, a square glass rectangular substrate with a thickness of 1 mm and a side length of 250 mm is prepared, and this rectangular substrate is placed substantially horizontally on a hot plate with a set temperature of 150 to 200 ° C, while a 65 W low-pressure mercury lamp. UV light was applied to the rectangular substrate surface for 120 seconds. Thus, the rectangular substrate is subjected to ultraviolet irradiation treatment and heat treatment,
A predetermined surface (resist coated surface) of the rectangular substrate was cleaned. Then, as shown in FIG. 1, the rectangular substrate (1b) was adsorbed and supported by a vacuum chuck (4) mounted on a rotary shaft (3) rotated by a rotary drive mechanism (2). This rectangular substrate (1b)
In the suction support by the vacuum chuck (4), the surface opposite to the processing surface of the substrate (1b) is the vacuum chuck (4) side. Then, at the center of the upper surface (processing surface) of the rectangular substrate (1b) supported by the vacuum chuck (4), for example, a viscosity of 30 cp
The rectangular substrate (1b) that is dripped with the resist of s, then drives the rotation drive mechanism (2), and is adsorbed and supported by the vacuum chuck (4).
To rotate. The rotation of this rectangular substrate (1b) is, for example, 60r.p.
The dropped resist is first spread on the surface of the rectangular substrate (1b) by low-speed rotation of about m, and then switched to high-speed rotation of, for example, about 3500 rpm, and the resist is rotated by centrifugal force to rotate the rectangular substrate (1b). The required resist coating is performed by further expanding in the outer peripheral direction. FIG. 2 shows the state of the thickness of the resist coating layer formed by drying at 110 ° C. after the spin coating, and the film thickness was substantially uniform in the side direction and the corner direction. In FIG. 2, the point (a) has a film thickness of 1.2 μm, and the point (a ′) has a film thickness of 1.3 μm.
上記実施例においては、基板に対する紫外線照射処理と
加熱処理とを同時に行なったが、この処理は加熱処理を
先ず行ない、次いで紫外線照射処理を行なってもよい。
即ちこの前処理における加熱処理は紫外線照射処理を助
長するものである故、予め加熱処理し引続いて紫外線照
射処理を行なっても支障ない。しかして上記加熱処理の
ための加熱源はホットプレートに限らず他の手段でもよ
く、また紫外線照射のための紫外線源も低圧水銀ランプ
に限らない。一方回転塗布において上記では回転を低速
−高速の2段切換えで行なったが、さらに多段的に切換
えてもよいし、また逆に定速回転で行なうこともでき
る。要は使用するレジストの粘度など考慮して適宜選択
すればよい。さらに基板は上記形状に限らず例えば角部
に丸みをもたせたものなどでもよい。In the above-mentioned embodiment, the ultraviolet irradiation treatment and the heating treatment are simultaneously performed on the substrate. However, this treatment may be performed by first performing the heating treatment and then performing the ultraviolet irradiation treatment.
That is, since the heat treatment in this pretreatment promotes the ultraviolet irradiation treatment, there is no problem even if the heating treatment is performed in advance and the ultraviolet irradiation treatment is subsequently performed. However, the heating source for the above heat treatment is not limited to the hot plate, and other means may be used, and the ultraviolet ray source for irradiating the ultraviolet rays is not limited to the low pressure mercury lamp. On the other hand, in spin coating, in the above, the rotation was performed by two-step switching from low speed to high speed, but it may be switched in multiple steps, or conversely, it may be performed at constant speed. In short, it may be appropriately selected in consideration of the viscosity of the resist used. Further, the substrate is not limited to the above-mentioned shape, and may be, for example, one having rounded corners.
なおレジストを塗布するに先立つ基板の前処理は紫外線
照射のみでも均一な膜厚の塗布層形成に有効ではあるが
照射処理に比較的長時間を要するため量産性の点から実
用上十分満足しうるとは云い難い。Pretreatment of the substrate prior to applying the resist is effective for forming a coating layer having a uniform film thickness only by UV irradiation, but the irradiation treatment requires a relatively long time and is therefore sufficiently satisfactory for practical use in terms of mass productivity. It is hard to say.
上記具体例から明らかの如く本発明によれば基板、例え
ば液晶表示素子用の四角形の基板などに対して全面略均
一な膜厚のレジスト塗布層を形成しうる。しかしてこの
種基板の所定面に対して膜厚ムラのない均一な塗膜層を
容易に形成しうることは、例えばフォトレジストを塗布
し、露光,現像処理を施してマスクパターンなど作成す
る場合に特に有効である。即ち上記レジスト塗布層は膜
厚ムラがないため露光工程において解像度のバラツキも
なくなり、また現像処理におけるサイドエッチングのバ
ラツキやレジスト残りもなくなり、所望の回路パターン
などを精度よく形成しうるからである。勿論フォトレジ
ストを用いたマスク形成の場合に限らず、一般塗膜層の
形成にも適用できる。即ち膜厚にムラなく美観など良好
で、しかも基板から剥離し難い塗膜層の形成が可能であ
る。As is clear from the above specific examples, according to the present invention, a resist coating layer having a substantially uniform film thickness can be formed on a substrate, for example, a rectangular substrate for a liquid crystal display device. However, it is easy to form a uniform coating layer on a given surface of a substrate of this kind without unevenness in film thickness when, for example, a photoresist is applied, and exposure and development are performed to form a mask pattern or the like. Especially effective for. That is, since the resist coating layer has no film thickness unevenness, variations in resolution are eliminated in the exposure step, variations in side etching in the development process and resist residue are eliminated, and a desired circuit pattern or the like can be formed with high precision. Of course, the present invention is not limited to the case of forming a mask using a photoresist, but can be applied to the formation of a general coating film layer. That is, it is possible to form a coating layer having a uniform film thickness, good appearance, and being difficult to peel off from the substrate.
第1図は本発明方法を説明するための説明図、第2図は
本発明の一実施例によって角形基板に塗布形成したレジ
スト膜厚の分布状態を模写的に示す平面図、第3図は従
来方法によって角形基板に塗布形成したレジスト膜厚の
分布状態を模写的に示す平面図である。 (1b)……基板、(2)……回転駆動機構 (3)……回転軸、(4)……真空チャックFIG. 1 is an explanatory view for explaining the method of the present invention, FIG. 2 is a plan view schematically showing a distribution state of a resist film thickness applied and formed on a rectangular substrate according to one embodiment of the present invention, and FIG. It is a top view which imitates and shows the distribution state of the resist film thickness applied and formed in the square substrate by the conventional method. (1b) …… Substrate, (2) …… Rotation drive mechanism (3) …… Rotary axis, (4) …… Vacuum chuck
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H05K 3/06 F 6921−4E ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H05K 3/06 F 6921-4E
Claims (3)
線照射処理を施す工程と、前記紫外線照射処理した基板
の処理面の略中央部にレジストを滴下し、その基板を回
転させ、この回転に伴なう遠心力にて前記レジストを滴
下した基板面全面にレジストを塗布する工程とを有する
ことを特徴とする基板へのレジスト塗布方法。1. A step of subjecting a resist-coated surface of a heated substrate to an ultraviolet irradiation treatment, and dropping a resist on a substantially central portion of a treated surface of the substrate subjected to the ultraviolet irradiation treatment, and rotating the substrate. And a step of applying the resist to the entire surface of the substrate onto which the resist has been dropped by the centrifugal force.
紫外線照射源として用いることを特徴とする特許請求の
範囲第1項記載の基板へのレジスト塗布方法。2. The method for coating a resist on a substrate according to claim 1, wherein a low-pressure mercury lamp is used as an ultraviolet irradiation source in the ultraviolet irradiation treatment.
基板の回転を低速次いで高速と切り換えることを特徴と
する特許請求の範囲第1項または第2項記載の基板への
レジスト塗布方法。3. In resist coating by rotating a substrate,
The method for coating a resist on a substrate according to claim 1 or 2, wherein the rotation of the substrate is switched between low speed and then high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61130221A JPH0659453B2 (en) | 1986-06-06 | 1986-06-06 | Method of applying resist to substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61130221A JPH0659453B2 (en) | 1986-06-06 | 1986-06-06 | Method of applying resist to substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62286579A JPS62286579A (en) | 1987-12-12 |
JPH0659453B2 true JPH0659453B2 (en) | 1994-08-10 |
Family
ID=15028981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61130221A Expired - Lifetime JPH0659453B2 (en) | 1986-06-06 | 1986-06-06 | Method of applying resist to substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0659453B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007579A (en) | 2001-06-19 | 2003-01-10 | Matsushita Electric Ind Co Ltd | Organic thin film formation method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5541864A (en) * | 1978-09-20 | 1980-03-24 | Fuji Photo Film Co Ltd | Spin coating method |
JPS5994823A (en) * | 1982-11-24 | 1984-05-31 | Ushio Inc | Ultraviolet purifier |
-
1986
- 1986-06-06 JP JP61130221A patent/JPH0659453B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5541864A (en) * | 1978-09-20 | 1980-03-24 | Fuji Photo Film Co Ltd | Spin coating method |
JPS5994823A (en) * | 1982-11-24 | 1984-05-31 | Ushio Inc | Ultraviolet purifier |
Also Published As
Publication number | Publication date |
---|---|
JPS62286579A (en) | 1987-12-12 |
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