JPH0636476Y2 - Constant temperature bath for supplying metal - Google Patents
Constant temperature bath for supplying metalInfo
- Publication number
- JPH0636476Y2 JPH0636476Y2 JP3986189U JP3986189U JPH0636476Y2 JP H0636476 Y2 JPH0636476 Y2 JP H0636476Y2 JP 3986189 U JP3986189 U JP 3986189U JP 3986189 U JP3986189 U JP 3986189U JP H0636476 Y2 JPH0636476 Y2 JP H0636476Y2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- container
- heated
- organic metal
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 title claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000009423 ventilation Methods 0.000 claims description 8
- 238000010992 reflux Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Furnace Charging Or Discharging (AREA)
- Furnace Details (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 この考案は、半導体製造装置の反応室に半導体層形成用
の有機金属を供給する有機金属供給用恒温槽に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a thermostatic bath for supplying an organic metal for supplying an organic metal for forming a semiconductor layer to a reaction chamber of a semiconductor manufacturing apparatus.
半導体の製造工程においては、反応室内に配設したウエ
ハーの表面に、有機金属ガスを吹き付けることにより半
導体層を形成することが行われており、このような有機
金属は、低温に加熱保持された容器内に液状で収容さ
れ、高温に設定された流量制御系を備えた配管を介して
上記反応室に気化ガスとして送り込まれるようになつて
いる。すなわち、上記有機金属は、高温によつて分解し
やすい性質を有しているため、40〜70℃の低い温度に設
定された容器内に液状で収容され、気化ガスとして反応
室に送り込まれる際には、80℃程度の温度に設定された
流量制御系で加熱され再液化を防止されるとともに、そ
の流量を適正状態にされて反応室に送られるようになつ
ている。このように、上記容器と流量制御系とは、設定
温度が異なるため、これらの保温は、それぞれ適正温度
に設定された別々の恒温槽内に配設することによつて行
うか、または、1個の恒温槽内に双方を配設し、容器は
恒温槽に設けられた加熱手段のみで加熱し、流量制御系
はさらに、バンドヒータ等で高温に加熱することにより
行われている。In the semiconductor manufacturing process, a semiconductor layer is formed by blowing an organometallic gas onto the surface of a wafer placed in a reaction chamber, and such an organometal is heated and held at a low temperature. It is accommodated in a liquid state in a container and is fed as vaporized gas into the reaction chamber through a pipe provided with a flow rate control system set to a high temperature. That is, since the organic metal has a property of easily decomposing at high temperature, it is contained in a liquid state in a container set at a low temperature of 40 to 70 ° C. and sent to the reaction chamber as vaporized gas. In addition, it is heated by a flow rate control system set at a temperature of about 80 ° C. to prevent reliquefaction, and the flow rate is adjusted to an appropriate state and sent to the reaction chamber. As described above, since the set temperatures of the container and the flow rate control system are different from each other, heat retention of these containers is performed by disposing them in separate thermostats set to proper temperatures, respectively, or Both of them are arranged in individual thermostats, the container is heated only by the heating means provided in the thermostat, and the flow rate control system is further heated to a high temperature by a band heater or the like.
しかしながら、上記方法のうち、前者では、恒温槽を2
個必要とし、装置が大掛かりになるとともに高価につく
という問題を有している。また、後者では、流量制御系
の加熱手段の発熱が、容器の温度に影響するため、容器
および流量制御系のそれぞれを精度よく温度制御するこ
とが難しいという問題がある。However, of the above methods, the former requires two thermostats.
There is a problem that the number of devices is required, the device becomes large in size, and the cost is high. Further, in the latter case, the heat generated by the heating means of the flow rate control system affects the temperature of the container, so that there is a problem that it is difficult to accurately control the temperature of each of the container and the flow rate control system.
この考案は、このような事情に鑑みなされたもので、1
個の恒温槽内に、容器および流量制御系を適正温度に保
持した状態で配設することのできる有機金属供給用恒温
槽の提供をその目的とする。This invention has been made in view of such circumstances.
An object of the present invention is to provide a thermostatic bath for supplying an organic metal, in which a container and a flow rate control system can be arranged in an individual thermostatic bath while maintaining an appropriate temperature.
上記の目的を達成するため、この考案の有機金属供給用
恒温槽は、槽内を、断熱板で槽下部と槽上部に仕切り、
上記槽下部内に有機金属を収容する容器およびこの容器
を加熱するための加熱手段を配設し、上記槽上部内に上
記容器から延設され容器内の有機金属を反応室に供給す
る配管およびその配管に設けられた流量制御系を配設
し、上記槽上部の下部側から外部に通気路を延設してそ
の先端を槽上部の上部側に連結し、この通気路内にフア
ンおよび加熱手段を設け、槽上部内の空気を、槽上部の
下部側から通気路内に吸引し、さらに通気路内から槽上
部の上部側に送り戻すような還流にするとともに、その
還流空気を加熱し加熱還流空気で上記流量制御系を加熱
保持するようにしたという構成をとる。In order to achieve the above-mentioned object, the constant temperature bath for supplying an organic metal of the present invention is divided into a bath lower part and a bath upper part by a heat insulating plate,
A container for containing an organic metal in the lower part of the tank and a heating means for heating the container are provided, and a pipe extending from the container in the upper part of the tank to supply the organic metal in the container to a reaction chamber and A flow rate control system is installed in the pipe, and a ventilation path is extended from the lower side of the upper part of the tank to the outside, and its tip is connected to the upper side of the upper part of the tank. By providing a means, the air in the upper part of the tank is sucked from the lower side of the upper part of the tank into the ventilation passage, and is further returned from the inside of the ventilation path to the upper side of the upper part of the tank, and the recirculated air is heated. The above-mentioned flow rate control system is heated and held by heated reflux air.
すなわち、この考案の有機金属供給用恒温槽は、槽内
を、断熱板で、槽下部と槽上部に仕切り、槽下部に有機
金属の容器を収容し、槽上部に配管および流量制御系を
収容するようになつている。そして、上記容器は槽下部
に設けられた加熱手段で低温に加熱保持し、流量制御系
は、フアンの作動によつて槽上部および通気路内を還流
する空気を、通気路内に設けられた加熱手段で加熱し、
この加熱還流空気で加熱保持するようになつている。こ
の際、上記還流空気の流れが、槽上部の下部側から通気
路内に向かい、通気路内の加熱手段を通過したのち、通
気路の上端から槽上部の上部側に流れいくようになるた
め、槽上部で流量制御系を加熱し冷却された温風が槽下
部の上側に流れてくるようになる。したがつて、槽下部
が上記温風による影響を受けにくくなるとともに、槽上
部と槽下部の間に断熱板が配設されているため、槽下部
と槽上部の空間部が遮断され、容器と流量制御系を互い
に異なる適正温度に保持することができるようになる。That is, the constant temperature bath for supplying organic metal of the present invention, the inside of the bath is partitioned by a heat insulating plate into a lower bath and an upper bath, an organic metal container is stored in the lower bath, and a pipe and a flow control system are stored in the upper bath. It is about to do. The container is heated and kept at a low temperature by a heating means provided in the lower part of the tank, and the flow rate control system is provided in the ventilation path with air that flows back into the upper part of the tank and the ventilation path by the operation of the fan. Heating with heating means,
The heated recirculation air is used for heating and holding. At this time, the flow of the above-mentioned reflux air flows from the lower side of the upper part of the tank toward the inside of the air passage, and after passing through the heating means in the air passage, flows from the upper end of the air passage to the upper side of the upper part of the tank. The hot air cooled by heating the flow rate control system in the upper part of the tank flows into the upper part of the lower part of the tank. Therefore, the lower part of the tank is less likely to be affected by the warm air, and since the heat insulating plate is arranged between the upper part and the lower part of the tank, the space between the lower part and the upper part of the tank is blocked, and It becomes possible to keep the flow rate control systems at proper temperatures different from each other.
つぎに、この考案を実施例にもとづいて詳しく説明す
る。Next, this invention will be described in detail based on embodiments.
第1図および第2図はこの考案の一実施例を示してい
る。すなわち、図において、11は恒温槽の外皮部下部側
を構成する上面が開口した四角箱状の槽下部であり、内
部に有機金属充填容器2が配設されている。上記容器2
は、外周面に温度計3付のバンドヒータ4が巻回されて
おり、このバンドヒータ4の加熱により内部の有機金属
を40〜70℃に保持するようになつている。5は上記恒温
槽の外皮部上部側を構成する縦断面L字状の筒状槽上部
であり、上記槽下部1の上端に連結され上方に延びる垂
直部5aと、その垂直部5aの上端から反応室(図示せず)
に向かつて水平に延びる水平部5bとで構成されている。
この槽上部5内と上記槽下部1内とは、断熱性を有する
仕切り板6によつて区切られ遮断された状態になつてい
る。また、この槽上部5内には、上記槽下部1内の容器
2の上端から延設された配管7が仕切り板6を貫通して
延びてきており、その先端が、水平部5bの中央部に配設
された流量調節計8の一端に連結されている。そして、
この流量調節計8の他端から反応室に向けて配管9が延
設されている。10は上記垂直部5aの下端部と水平部5bの
他端側下面とを結ぶ断熱性を有するL形のダクトであ
り、垂直部5aとの境界部にフアン11が設けられ、コーナ
部にはヒータ12が配設されている。上記フアン11は、第
2図の矢印方向に槽上部5内の空気を還流させるように
なつており、ヒータ12はその還流空気を加熱することに
より、流量調節計8を80℃に加熱保持するようになつて
いる。13,14および15はそれぞれ開閉弁である。1 and 2 show an embodiment of the present invention. That is, in the figure, numeral 11 is a rectangular box-shaped lower part of the tank which constitutes the lower part of the outer skin of the thermostatic chamber and has an open upper surface, in which the organometallic filling container 2 is arranged. The container 2
A band heater 4 with a thermometer 3 is wound around the outer peripheral surface of the device, and heating of the band heater 4 keeps the organic metal inside at 40 to 70 ° C. Reference numeral 5 denotes an upper part of a tubular tank having an L-shaped vertical cross-section which constitutes the upper side of the outer skin of the constant temperature bath, and is connected to the upper end of the lower bath part 1 and extends vertically, and from the upper end of the vertical part 5a. Reaction chamber (not shown)
And a horizontal portion 5b that extends horizontally toward the front.
The inside of the tank upper part 5 and the inside of the tank lower part 1 are separated by a partition plate 6 having a heat insulating property and are in a state of being blocked. In addition, a pipe 7 extending from the upper end of the container 2 in the tank lower portion 1 extends through the partition plate 6 in the tank upper portion 5, and the tip thereof is at the central portion of the horizontal portion 5b. Is connected to one end of a flow rate controller 8 arranged in the. And
A pipe 9 extends from the other end of the flow rate controller 8 toward the reaction chamber. Reference numeral 10 denotes an L-shaped duct having heat insulating properties that connects the lower end of the vertical portion 5a and the lower surface of the horizontal portion 5b on the other end side. A fan 11 is provided at the boundary between the vertical portion 5a and the vertical portion 5a. A heater 12 is provided. The fan 11 is adapted to recirculate the air in the tank upper part 5 in the direction of the arrow in FIG. 2, and the heater 12 heats the recirculated air to heat and maintain the flow rate controller 8 at 80 ° C. It is becoming like this. 13, 14 and 15 are on-off valves, respectively.
このように構成した結果、開閉弁13,14および15を開け
ると、容器2内の有機金属はガス状になつて、配管7内
を加熱されながら流れていく。そして、流量調節計8で
その流量を適正量に調節されたのち、配管9を通つて反
応室に送られる。この際、フアン11の作動によつて、還
流する空気の流れが図示の矢印方向であるため、槽上部
5内の温度は、流量調節計8側が高温になり、槽下部1
に近づくほど低温になる。したがつて、容器2から吐出
される有機金属は、配管7内を進むにつれて高温になり
途中で液化することを防止され、槽下部1はヒータ12の
発熱の影響を受けにくくなる。また、上記槽上部5と槽
下部1の間は、仕切り板6で遮断されているため、容器
2および流量調節計8をそれぞれ適正温度に保持するこ
とができるようになる。As a result of such a configuration, when the opening / closing valves 13, 14 and 15 are opened, the organic metal in the container 2 becomes gaseous and flows in the pipe 7 while being heated. Then, the flow rate is adjusted to an appropriate amount by the flow rate controller 8 and then sent to the reaction chamber through the pipe 9. At this time, due to the operation of the fan 11, the flow of the recirculated air is in the direction of the arrow shown in the figure. Therefore, the temperature inside the tank upper part 5 becomes higher on the flow controller 8 side,
The closer to, the lower the temperature. Therefore, the organic metal discharged from the container 2 is prevented from being liquefied in the middle of the pipe 7 due to the high temperature as the pipe 7 progresses, and the lower part 1 of the tank is less affected by the heat generated by the heater 12. Further, since the partition plate 6 blocks the space between the tank upper part 5 and the tank lower part 1, it is possible to keep the container 2 and the flow rate controller 8 at proper temperatures.
なお、上記フアン11としては、モータが内蔵された公知
のもので、80℃の温度に耐えるものが使用されており、
ヒータ12としては、フイン付のパイプヒータが使用され
ている。また、流量調節計8には、MFC(マスフローコ
ントローラー)が使用されている。As the fan 11, a well-known one having a built-in motor and capable of withstanding a temperature of 80 ° C. is used.
As the heater 12, a finned pipe heater is used. Further, the flow rate controller 8 uses an MFC (mass flow controller).
以上のように、この考案の有機金属供給用恒温槽は、槽
内を、断熱板で、槽下部と槽上部に仕切つて、互いに異
なる温度に保持できるようにしているとともに、流量制
御計を加熱保持する加熱還流空気の温度を槽下部に近づ
くほど低温になるようにしている。したがつて、槽下部
および槽上部が互いの熱の影響を受けにくくなり、1個
の恒温槽内に、容器および流量制御計を配設しても、双
方を適正温度に保持することができるようになる。As described above, in the organometallic supply constant temperature bath of the present invention, the inside of the bath is divided by the heat insulating plate into the bath bottom and the bath top so that different temperatures can be maintained and the flow controller is heated. The temperature of the heated reflux air to be held is set to be lower toward the lower part of the tank. Therefore, the lower part of the tank and the upper part of the tank are less likely to be affected by the heat of each other, and even if the container and the flow rate controller are arranged in one constant temperature tank, both can be maintained at appropriate temperatures. Like
第1図はこの考案の一実施例の斜視図、第2図はその縦
断面図である。 1…槽下部、2…容器、4…バンドヒータ、5…槽上
部、6…仕切り板、7,9…配管、8…流量調節計、10…
ダクト、11…フアン、12…ヒータFIG. 1 is a perspective view of an embodiment of the present invention, and FIG. 2 is a vertical sectional view thereof. 1 ... Lower part of tank, 2 ... Container, 4 ... Band heater, 5 ... Upper part of tank, 6 ... Partition plate, 7, 9 ... Piping, 8 ... Flow controller, 10 ...
Duct, 11 ... Juan, 12 ... Heater
Claims (1)
り、上記槽下部内に有機金属を収容する容器およびこの
容器を加熱するための加熱手段を配設し、上記槽上部内
に上記容器から延設され容器内の有機金属を反応室に供
給する配管およびその配管に設けられた流量制御系を配
設し、上記槽上部の下部側から外部に通気路を延設して
その先端を槽上部の上部側に連結し、この通気路内にフ
アンおよび加熱手段を設け、槽上部内の空気を、槽上部
の下部側から通気路内に吸引し、さらに通気路内から槽
上部の上部側に送り戻すような還流にするとともに、そ
の還流空気を加熱し加熱還流空気で上記流量制御系を加
熱保持するようにしたことを特徴とする有機金属供給用
恒温槽。1. A tank is divided into a tank lower part and a tank upper part by a heat insulating plate, and a container for containing an organic metal and a heating means for heating the container are provided in the tank lower part. A pipe extending from the container to supply the organic metal in the container to the reaction chamber and a flow control system provided in the pipe are arranged, and a ventilation path is extended from the lower side of the upper part of the tank to the outside. The tip is connected to the upper side of the upper part of the tank, and a fan and heating means are provided in this ventilation path, and the air in the upper part of the tank is sucked into the ventilation path from the lower side of the upper part of the tank. A constant temperature bath for supplying an organic metal, characterized in that the reflux air is sent back to the upper side of the upper part, and the reflux air is heated so that the flow control system is heated and held by the heated reflux air.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3986189U JPH0636476Y2 (en) | 1989-04-03 | 1989-04-03 | Constant temperature bath for supplying metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3986189U JPH0636476Y2 (en) | 1989-04-03 | 1989-04-03 | Constant temperature bath for supplying metal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02131195U JPH02131195U (en) | 1990-10-31 |
JPH0636476Y2 true JPH0636476Y2 (en) | 1994-09-21 |
Family
ID=31549139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3986189U Expired - Fee Related JPH0636476Y2 (en) | 1989-04-03 | 1989-04-03 | Constant temperature bath for supplying metal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0636476Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE249396T1 (en) * | 1997-07-11 | 2003-09-15 | Advanced Tech Materials | DEVICE FOR PROVIDING CHEMICAL ACTIVE SUBSTANCES |
-
1989
- 1989-04-03 JP JP3986189U patent/JPH0636476Y2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH02131195U (en) | 1990-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |