JPH06349691A - Semiconductor device and device and method for manufacturing it - Google Patents

Abstract

(57) [Summary] [Objective] When a semiconductor device is manufactured in units of one or several units instead of a wafer unit, it is possible to identify each manufacturing unit and manage the process of the semiconductor device. Provided are a semiconductor device and a semiconductor manufacturing device. [Structure] The semiconductor device 1 is provided with a process recording area 5, and a symbol 16 as an identification mark is formed (described).
In a series of manufacturing processes, the data is read out at the time of individual processing or at the end of processing and used for process control. [Effect] Since each manufacturing unit can be identified,
It becomes possible to manufacture a large number or many types of semiconductor devices in parallel, and automation of process control can be achieved. Furthermore, it becomes easy to pursue the cause when a defect occurs.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a manufacturing apparatus and a manufacturing method thereof, and more particularly to a semiconductor device capable of simultaneous production of various kinds of semiconductor devices with easy process control, a manufacturing apparatus and a manufacturing method thereof. .

[0002]

2. Description of the Related Art In the current production of semiconductor devices, a large number of semiconductor devices are processed at one time for each wafer. Further, as the degree of integration of semiconductor devices increases, the area per semiconductor device tends to increase and the yield decreases, so in order to compensate for this, the diameter of wafers is being increased. However, manufacturing equipment is required to be capable of processing a large area with high precision correspondingly, and it is complicated and the cost is rising. Therefore, as disclosed in Japanese Patent Laid-Open No. 61-177709, attention has been paid to the merit of producing semiconductor devices without increasing the size of the semiconductor manufacturing device by limiting the shape when cutting and processing from a round wafer. There is. That is, the number of products that can be manufactured at one time is one or several, which is smaller than that of a round wafer, but the investment in the manufacturing apparatus can be reduced and the yield can be improved easily.

[0003]

In such a production mode in which the shapes of substrates that can be processed at one time are limited, a large number of semiconductor devices are not produced at one time as in the case of round wafers that have been used so far. However, problems such as complicated process control and difficulty in pursuing the cause when a defect occurs occurred. Further, in the production of the semiconductor device according to this embodiment, it is difficult to produce many kinds of semiconductor devices in parallel because of the complexity of the process control. Further, in the production on a wafer-by-wafer basis, the orientation flat was used for positioning, but in the processing according to the present embodiment, since there is no oriental flat, a new positioning method is required.

The object of the present invention is to solve the above problems, and when semiconductor devices are manufactured in units of one or several, instead of wafers, they are identified by each manufacturing unit. It is an object of the present invention to provide a semiconductor device capable of managing the process of the semiconductor device, a manufacturing apparatus and a manufacturing method thereof.

[0005]

In order to solve the above-mentioned problems, it is necessary to provide a means for performing management by describing symbols used for process control not on a wafer-by-wafer basis but on a semiconductor device. Further, as a semiconductor manufacturing apparatus, it is possible to automate or produce various kinds of semiconductor devices by reading the symbol written on the semiconductor device and performing processing while obtaining information. Therefore,
To achieve the above object, the semiconductor device of the present invention is characterized in that a two-dimensional or three-dimensional identification mark is formed on a semiconductor substrate or a thin film formed on the surface of the semiconductor substrate. It is what Further, as the identification mark, at least one of a manufacturing number of the semiconductor device, or an identification mark capable of identifying a manufacturing device engaged in manufacturing the semiconductor device, and an identification mark representing a manufacturing condition by the manufacturing device. To form the identification mark of
An identification mark indicating each step in the manufacturing process of the semiconductor device and an identification mark indicating that one of the steps is completed corresponding to the individual step are formed.

Further, the above-mentioned object is at least one of an identification mark peculiar to a device involved in manufacturing a semiconductor device, an identification mark showing a manufacturing condition, and an identification mark showing the end of one of the manufacturing processes. It is achieved by a semiconductor device manufacturing apparatus, characterized in that it has means for forming the identification mark of (1) on the semiconductor device.

Further, in the method of manufacturing a semiconductor device, at least one of a symbol unique to the manufacturing device of the semiconductor device formed on the semiconductor device, a symbol indicating a manufacturing condition, and a symbol indicating a process end is read. It is characterized in that the processing of the semiconductor device is controlled by the information.

[0008]

According to the above construction, the individual semiconductor devices can be identified by recording the serial number of the device on the semiconductor device itself, not on the wafer, by using means such as film formation, etching, ion implantation and laser. Therefore, process control can be performed based on this. Further, by describing in the manufacturing process the identification number and manufacturing conditions of the semiconductor manufacturing apparatus involved in manufacturing the semiconductor device, the management of the manufacturing process becomes easy. For example, by confirming the identification number of a semiconductor manufacturing apparatus that has already been performed, the next processing step to be performed can be recognized. Therefore, even when manufacturing different types of semiconductor devices in parallel, each processing step is performed. It is possible to perform a correct series of processing without mistake in the procedure. Further, even when a defect occurs, the manufacturing process and manufacturing conditions are described on the semiconductor device, so that the cause can be easily pursued. Further, by forming a direction-identifiable portion in the semiconductor device, it can serve as an orientation flat in the case of a wafer.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Some embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic view of a semiconductor device 1 which is an embodiment of the present invention. This apparatus is composed of a semiconductor substrate 2, an element forming layer 3, a direction identifying section 4, and a process recording section 5. The element forming layer 3 is mainly composed of a conductive film (transistor electrode, wiring, etc.) and a non-conductive film (gate oxide film, field oxide film, interlayer insulating film, etc.). However, for example, in an actual MOS semiconductor element (pn junction of a transistor), it is formed in the semiconductor substrate 2 in the vicinity of the gate electrode.
Here, for the sake of convenience, the element forming layer 3 is defined above the electrode of the transistor in a structure having no gate oxide film or gate electrode.

The direction identifying section 4 defines the direction of the semiconductor device 1, and the semiconductor device 1 is required in the case of manufacturing in units of one or several wafers instead of wafers. . For example, when a large number of semiconductor devices 1 are manufactured on one wafer, the direction of the semiconductor device 1 is determined with reference to the oriental flat (orientation flat) surface of the wafer, and each laminated film in the element formation layer 3 is formed. The position has been determined. However, when manufacturing one or several semiconductor devices 1 in a strip shape, unlike the case of a wafer, since there are two axes of symmetry in the element formation plane, the sides of the semiconductor device 1 are used for positioning. However, the direction cannot be determined. That is, the same shape is obtained even when the strip-shaped semiconductor element 1 is rotated 180 degrees. Therefore, in the present embodiment, the direction identifying section 4 is provided at one of the four corners of the strip so that the direction of the semiconductor device 1 can be defined. Can be prevented from being formed by mistake.

The process recording section 5 is provided to record the semiconductor manufacturing apparatus used to form the element forming layer 3 (semiconductor device manufacturing apparatus, the same applies hereinafter) and the process conditions at the time of manufacturing. . A manufacturing number for identifying the semiconductor device may be recorded instead. A symbol 16 is formed (described) on the process recording section 5. The symbol 16 may be a number, a figure or the like that can be easily identified. In this embodiment, as a concrete recording means of the symbol 16, a thin film having a hole shaped like an arithmetic number is used. This group of numbers corresponds to the semiconductor manufacturing apparatus involved in manufacturing the semiconductor device 1 and its process conditions. Also,
The symbol 16 of the process recording portion 5 may be formed in a shape such as a notch or a depression.

This semiconductor device 1 is not a wafer unit but a semiconductor device 1
When manufacturing in units of one or several, it is necessary to obtain process management information in units of one or several manufacturing units instead of wafer units. For example, when a defect of unknown cause occurs, when a large number of semiconductor devices 1 are manufactured on one wafer, the device or process condition is investigated with the wafer number as a clue to investigate the wafer, and the cause is pursued. It However, when the semiconductor device 1 is manufactured in units of one or several units instead of wafer units, some identification method is required. Therefore, according to the present embodiment, by providing the process recording section 5, the process control of each semiconductor device 1 can be performed, so that the cause of the defect can be easily pursued and the yield can be improved.

According to this embodiment, the identification number of each semiconductor manufacturing apparatus that manufactured the semiconductor device 1 and the process condition at the time of manufacturing are described in the process recording section 5. Process recording section 5
The symbol 16 present therein was formed (described) as follows. First, a thin film is formed on a portion of the semiconductor substrate 2 corresponding to the process recording portion 5. When the processing of one step is completed in the semiconductor manufacturing apparatus, the thin film is irradiated with a laser to melt the thin film to form a hole. The laser is scanned so that this hole has the shape of the identification number of the manufacturing apparatus and the number indicating the process condition. At this time, it is desirable that the thin film be less likely to transmit laser light. The laser is preferably an excimer, a carbon dioxide laser, or the like, which has a certain output.

FIG. 2 shows a second embodiment of the present invention. The present embodiment is an example in which the process recording section 5 is formed on the back surface of the semiconductor substrate 2 (on the side where the element forming layer 3 is not formed). According to the present embodiment, since the process recording section 5 does not come in the same plane as the element forming layer 3, there is an advantage that the element forming layer 3 can be widely formed even if the area of the semiconductor substrate 2 is the same. Similarly, as shown in FIG. 3, the process recording section 5 may be formed on the side surface of the semiconductor substrate. Further, in the present embodiment, the direction identifying portion 4 is a method of marking one corner instead of a method of cutting one corner out of the four corners as in the first embodiment of the present invention. Specifically, it is performed by making a hole in a thin film formed in advance. This process is basically the same as the process of forming the process recording portion 5 in the first embodiment.

Further, FIG. 4 shows a third embodiment of the present invention. In this embodiment, the symbol 16 in the process recording section 5 is formed by laser CVD. Laser CVD is a process in which gaseous molecules are decomposed by heat induced by laser light or light energy of laser light, and free atoms (molecules) are deposited on a substrate to form a film. Although a laser is used in this embodiment, a focused ion beam or an electron beam may be used. That is,
Since the film is formed in the area irradiated with these beams, the symbol 16 is formed by irradiating the process recording unit 5 with the beam and scanning the beam in a desired symbol shape. That is, according to this method, a conductive film in the form of symbol 16 is formed on the process recording portion 5. Although laser CVD is used in this embodiment, as a method of forming a film in the shape of symbol 16 on the process recording portion 5, there is also a method of using a normal photolithography technique and a film forming technique.

FIG. 5 shows a fourth embodiment of the present invention. In this embodiment, the symbol 16 is formed of a rod-shaped film instead of a number, and is distinguished by the distance between the rods and the presence or absence of the rods. Although the symbol 16 is described as a rod-shaped mark in the present embodiment, the shape of the mark of the symbol 16 is not specified as long as it can be easily recognized. In addition, although the present embodiment is a method of identifying by the interval and arrangement of the rods, it is also possible to identify by the size, number or height of the marks.
According to the present embodiment, since the conductive film of symbol 16 is exposed on the surface of the semiconductor device 1, two probers are brought into contact with the process recording unit 5 and the symbol 1 is automatically determined by the presence or absence of conduction.
6 can be identified.

FIG. 6 shows a fifth embodiment of the present invention. In this embodiment, the symbol 16 is formed in the process recording section 5 on the semiconductor substrate 1. In this embodiment, symbol 16 is formed by shaving the semiconductor substrate 1 using a focused ion beam. in this case,
In addition to the focused ion beam, it can be formed by laser, etching, or the like. Further, it is also possible to form the symbol 16 as a film on the semiconductor substrate 1 by using a laser, an electron beam, a focused ion beam or the like as in the fourth embodiment of the present invention.

FIG. 7 shows a sixth embodiment of the present invention. In this embodiment, the symbol 16 is formed as an ion implantation region in the process recording portion 5 on the semiconductor substrate 1. A resist is applied on the semiconductor substrate 2 as a mask for ion implantation, and the resist is removed only in the region corresponding to the symbol 16. After this, ion implantation is performed to the extent that electrical conduction is obtained in the silicon substrate, and the symbol 16
Electrical conduction is obtained only in the region corresponding to.
In the present embodiment, since the conductive part, which is the symbol 16 on the semiconductor substrate 2, is exposed on the surface, two probers are brought into contact with the process recording portion 5 and the symbol is automatically determined by the presence or absence of conduction. 16 can be identified.

FIG. 8 shows a semiconductor manufacturing apparatus 15 according to the present invention.
Of these, a schematic representation of the vacuum chamber portion,
It shows a seventh embodiment of the present invention. A chuck 7 is arranged for the purpose of fixing the semiconductor device 1 in a main chamber 9 that is involved in manufacturing the elements of the semiconductor device 1, and has a capability of emitting a laser toward the semiconductor device 1 fixed to the chuck 7. The beam emitting unit 8 is arranged above the chuck. In this embodiment, the beam emitting unit 8 has the ability to emit a laser, but a focused ion beam or an electron beam may be used depending on the case. The laser beam emitted from the beam emitting unit 8 is applied to the process recording unit 5 on the semiconductor substrate 1, and a thin film previously formed on the process recording unit 5 can be perforated. By scanning the laser beam so as to correspond to the shape of symbol 16, it is possible to make a hole having the shape of symbol 16 in the thin film of the process recording unit 5. Further, by disposing the beam emitting unit 8 on the side of the chuck 7, it is possible to form the process recording unit 5 on the side surface of the semiconductor device. Further, since the film melted by the beam may cause some contamination, it is desirable to form the process recording portion 5 after processing the element forming layer 3 which is the main purpose of the semiconductor manufacturing apparatus 15.

FIG. 9 schematically shows a chamber portion in the semiconductor manufacturing apparatus 15 to show the eighth embodiment of the present invention. In this embodiment, a sub chamber 10 having a function as a load lock chamber is added to the main chamber 9. This sub-chamber has a carrying function of the semiconductor device 1, a vacuum exhausting function, and a forming function of the symbol 16 of the process recording section 5. In the present embodiment, the main chamber 9 for processing the element forming layer 3 is not contaminated with the contamination generated when the process recording section 5 is formed, so that the element forming layer 3 can be processed well.

FIG. 10 shows an optimized chuck 7 structure as a ninth embodiment of the present invention. This embodiment corresponds to the second embodiment of the present invention and is effective when the process recording portion 5 is formed on the back surface of the semiconductor device 1.
The slit 6 is provided so that the beam can pass through a part of the chuck 7. Further, by performing vacuum exhaust from the rear surface of the slit 6 (exhaust from the same side as the beam emitting unit 8 with respect to the semiconductor device 1), contamination generated during the formation of the process recording unit 5 is prevented from occurring in the element formation layer 3 of the semiconductor substrate 1. It can be exhausted without touching the side. Further, although the slit is used in this embodiment, a hole through which the beam can pass may be used.

FIG. 11 shows, as a tenth embodiment of the present invention, a case where the present invention is applied to a semiconductor manufacturing apparatus 15 which is configured by combining various processing apparatuses 11. In this embodiment, the semiconductor manufacturing apparatus 15 includes various processing apparatuses 11 (a film forming apparatus, an etching apparatus, an ion implantation apparatus, an oxidation furnace, an annealing furnace,
(A lithographic apparatus, etc.) and a transport system 1 for connecting them
2. Consists of a transport system controller 14 and a symbol reader 13. The symbol reader 13 may be attached to each processing device 11. Further, in FIG. 11, the transport system 12
12A and 12B intersect at the center, the respective processing devices 11 may be connected in a mesh shape as shown in FIG.

FIG. 13 shows the symbol 16 as shown in FIG.
5 is a flowchart showing a procedure for manufacturing the semiconductor device 1 using the semiconductor manufacturing device 15 having the reading mechanism of FIG. In the process of transporting the semiconductor device 1, the process recording unit 5
The upper symbol 16 is recognized and read by the symbol reader 13 and this information is sent to the transport controller 14. Since the transfer control device 14 can recognize up to which process the semiconductor device 1 has completed, it can send a command to the transfer system 12 to transfer the semiconductor device 1 to the next processing device. In the processing apparatus, after processing the element forming layer 3, a symbol 16 unique to the processing apparatus is formed in the process recording unit 5. This operation is repeated until the semiconductor device 1 is completed. According to this embodiment, the process is not erroneous and the reliability is improved. This operation is possible even when a plurality of semiconductor devices 1 exist on the semiconductor manufacturing apparatus 15. When manufacturing a plurality of semiconductor devices in succession, the arrangement of the semiconductor devices 1 can be optimized so that processing can be performed most efficiently by the transfer control device.

FIG. 14 is a flow chart summarizing the tenth embodiment of the present invention. The structure of the device is the same as that of FIG. 11, but each operation and operation are different from those of the tenth embodiment, and it is possible to simultaneously manufacture various kinds of semiconductor devices. First, the symbol 16 is formed in the process recording portion 5 in advance according to the type of semiconductor device to be manufactured. That is, the semiconductor device has a manufacturing number or a symbol or number corresponding to the model number of the semiconductor device. Then, when loaded into the semiconductor manufacturing apparatus 15, the process recording unit 5 is operated by the symbol reader 13 in the transport path.
The type of the semiconductor device, which is symbol 16 of, is read. This information is transmitted to the transfer control device 14, is recognized, and instructs the transfer system 12 to transfer the semiconductor device 1 to the target processing device 11. After finishing the processing of the element forming layer 3 in the processing apparatus 11, a symbol indicating that the processing in the processing apparatus is finished is formed (described) in the process recording section 5. As described above, the processing proceeds while appropriately reading the information indicating the type of the semiconductor device 1 and the information indicating the progress status of the process, and after confirming that the process is completed, the semiconductor manufacturing device 15 discharges the product. Semiconductor device 1 to be manufactured in advance in semiconductor device 1
Since various types of semiconductor devices are recorded, it is possible to identify them even if many types of semiconductor devices are mixed and processed. Therefore, it is possible to simultaneously produce many kinds of semiconductor devices.

FIG. 15 shows a twelfth embodiment of the present invention in which only the symbol indicating the type is previously formed in the process recording portion 5 on the semiconductor device 1. First, the symbol 16 is formed in the process recording portion 5 in advance according to the type of semiconductor device to be manufactured. When loaded into the semiconductor manufacturing apparatus 15, the symbol reader 13 reads the type of the semiconductor device, which is the symbol 16 of the process recording unit 5, in the transport path. This information is transmitted to the transportation control device 14, is recognized, and is programmed to be transported according to the processing steps of the semiconductor device 1 to be manufactured. The information is transferred by the transfer system 12 according to this program and sequentially processed by the respective processing devices 11. However, the information indicating the type of the semiconductor device 1 indicated by reference numeral 16 is read by the reference reader of the transfer system 12 as appropriate. , Used as location information. After the program is completed, the completed semiconductor device 1 is discharged from the semiconductor manufacturing device 15.

FIG. 16 shows a thirteenth embodiment of the present invention in which a symbol indicating the type of the semiconductor device 1 and a symbol indicating a necessary processing step are formed in advance in the process recording section 5 on the semiconductor device 1. is there. First, in accordance with the type of semiconductor device to be manufactured, symbols indicating the type of semiconductor device 1 and the necessary processing steps are formed in the process recording unit 5 in the order of processes. Then, when the semiconductor device 1 is put into the semiconductor manufacturing apparatus 15, the symbol reading machine 13 reads the processing step of the semiconductor device 1 which is the symbol 16 of the step recording unit 5 in the transport path. This information is transmitted to the conveyance control device 14, and is instructed to the conveyance system 12 to convey the recognized and read processing device 11. In the processing device 11, processing is performed according to the symbol 16 of the process recording unit 5. After this processing is completed, a symbol (processing completion symbol) indicating that the processing in the processing device is completed is formed in the process recording unit 5. Further symbol reader 1
The symbol 16 is read by 3 and the transport control device recognizes a symbol indicating the next process without the process end symbol, and then the transport system 12 transports the symbol to a predetermined processing device. This is repeated until the process is completed. After confirming that the process is completed, the semiconductor manufacturing apparatus 15 discharges the product. According to this embodiment, the steps required for manufacturing the semiconductor device 1 are described, so that various types of semiconductor devices can be manufactured simultaneously.

According to these embodiments, the history (manufacturing process) in the formation process of the semiconductor device 1 is clearly defined even when the semiconductor device 1 is manufactured not by the wafer but by one or several manufacturing units. Therefore, it becomes easy to manage the process, and it becomes easy to pursue the cause of the defect and take countermeasures. Furthermore, since the direction of the semiconductor device 1 can be defined,
It is possible to prevent the formation of the laminated films in the element formation layer 3 in the wrong direction. Furthermore, since it is possible to process while reading the symbol written on the semiconductor device 1, it is possible to manufacture without error even when manufacturing a large number or many kinds of semiconductor elements in parallel. Further, since each manufacturing unit can be recognized, the process control can be automated.

[0028]

As described above, according to the present invention, when a semiconductor device is manufactured not in a wafer unit but in a unit of a plurality of semiconductor devices or in a unit of a plurality of semiconductor devices, it is possible to identify each manufacturing unit and manage the process of the semiconductor device. It is possible to obtain a semiconductor device, a manufacturing apparatus and a manufacturing method thereof.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a first embodiment of the present invention.

FIG. 2 is a schematic diagram of a second embodiment of the present invention.

FIG. 3 is a schematic view of another example of the second embodiment of the present invention.

FIG. 4 is a schematic diagram of a third embodiment of the present invention.

FIG. 5 is a schematic diagram of a fourth embodiment of the present invention.

FIG. 6 is a schematic diagram of a fifth embodiment of the present invention.

FIG. 7 is a schematic diagram of a sixth embodiment of the present invention.

FIG. 8 is a schematic diagram of a seventh embodiment of the present invention.

FIG. 9 is a schematic diagram of an eighth embodiment of the present invention.

FIG. 10 is a schematic diagram of a ninth embodiment of the present invention.

FIG. 11 is a schematic diagram of a tenth embodiment of the present invention.

FIG. 12 is a schematic view of another example of the tenth embodiment of the present invention.

FIG. 13 is a flowchart showing a tenth embodiment of the present invention.

FIG. 14 is a flowchart showing an eleventh embodiment of the present invention.

FIG. 15 is a flowchart showing a twelfth embodiment of the present invention.

FIG. 16 is a flowchart showing a thirteenth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 semiconductor device 2 semiconductor substrate 3 element formation layer 4 direction identification part 5 process recording part 6 slit 7 chuck 8 beam emitting part 9 main chamber 10 sub-chamber 11 processing device 12 transport system 13 symbol reader 14 transport system control device 15 semiconductor manufacturing Equipment 16 Symbol 17 Laser beam 18 Vacuum exhaust system

Claims (27)

[Claims] 1. A semiconductor device comprising a semiconductor substrate or a thin film formed on the surface of the semiconductor substrate, on which an identification mark formed two-dimensionally or three-dimensionally is formed. 2. A semiconductor device, wherein an identification mark representing a serial number of a semiconductor device is formed on a semiconductor substrate or a thin film formed on the surface of the semiconductor substrate. 3. A semiconductor substrate or a thin film formed on the surface of the semiconductor substrate, and an identification mark capable of identifying a manufacturing apparatus involved in manufacturing a semiconductor device, and an identification mark representing a manufacturing condition by the manufacturing apparatus. Among these, at least one of the identification marks is formed, and a semiconductor device. 4. A semiconductor substrate, or a thin film formed on the surface of the semiconductor substrate, is provided with an identification mark indicating each step in the manufacturing process of a semiconductor device, and any step corresponding to the individual step. A semiconductor device having an identification mark indicating that the process is completed. 5. The semiconductor device according to claim 4,
The semiconductor device, wherein the identification mark representing each process in the manufacturing process represents a manufacturing apparatus or manufacturing conditions involved in manufacturing the semiconductor device. 6. The semiconductor device according to claim 4,
A semiconductor device, characterized in that an identification mark indicating that one of the steps has been completed is formed corresponding to each of the individual steps in the vicinity of the identification mark indicating the individual step in the manufacturing process. 7. The semiconductor device according to claim 1, 2, 3 or 4, wherein the identification mark is a symbol or a number. 8. The semiconductor device according to claim 1, 2, 3 or 4, wherein at least one of the mark arrangement, the number, the shape, the size, the mark height and the mark depth is used as the identification mark. A semiconductor device using one means. 9. A semiconductor substrate or a thin film formed on the surface of the semiconductor substrate is provided with a two-dimensional or three-dimensional identification mark, and as the identification mark, the arrangement of marks, the number of marks, At least one of a semiconductor device manufacturing apparatus, manufacturing conditions, or a manufacturing number can be identified by using at least one means of shape, size, mark height, and mark depth. Semiconductor device. 10. The semiconductor device according to claim 1, 2, 3 or 4, wherein the identification mark is formed on an element formation surface of the semiconductor device, or a back surface or a side surface thereof. Semiconductor device. 11. The semiconductor device according to claim 1, wherein the mark indicating the identification mark is:
A semiconductor device having a plurality of thin films formed at arbitrary intervals on the element formation surface, the back surface or the side surface of the semiconductor device. 12. The semiconductor device according to claim 1, wherein the mark indicating the identification mark is:
A semiconductor device, wherein any one of a hole, a recess, and a notch is formed at an arbitrary interval in a thin film formed on an element formation surface, a back surface or a side surface of the semiconductor device. 13. The semiconductor device according to claim 1, 2, 3 or 4, wherein as the mark showing the identification mark,
A semiconductor device, wherein ion implantation regions are formed at arbitrary intervals on a thin film formed on the element formation surface, the back surface or the side surface of the semiconductor device. 14. A semiconductor substrate on a back surface or a side surface of an element forming surface of a semiconductor device, or a thin film formed on a semiconductor substrate surface on a back surface or a side surface of the element forming surface is provided with a hole, a depression, a thin film, or an ion implantation region. A semiconductor device characterized in that an identification mark is formed by forming one of them. 15. A semiconductor device, wherein the line symmetry axis in the shape of the semiconductor substrate in the element formation surface is one or less. 16. An identification mark peculiar to a device involved in the manufacture of a semiconductor device, an identification mark showing a manufacturing condition, or an identification mark showing the end of any one of the manufacturing processes, A semiconductor device manufacturing apparatus comprising means for forming the semiconductor device. 17. The semiconductor device manufacturing apparatus according to claim 16, wherein the identification mark is a symbol or a number. 18. A process of using a laser beam, an electron beam, or an ion beam as a part of a plurality of process steps for processing an element formation surface while holding a semiconductor device in one place. An apparatus for manufacturing a semiconductor device, which is a process. 19. A semiconductor device manufacturing apparatus, comprising: a semiconductor device held in one place; and processing means for performing different processing on an element formation surface and a back surface thereof. 20. An apparatus for manufacturing a semiconductor device, wherein any one of a laser beam, an electron beam and an ion beam is irradiated through a part of a chuck for fixing the semiconductor device. 21. In a semiconductor device manufacturing apparatus having a plurality of processing means, a processing order or processing conditions are determined by reading a manufacturing number or processing conditions of the semiconductor device formed in advance in the semiconductor device. An apparatus for manufacturing a semiconductor device, comprising: 22. At least one of an identification mark peculiar to a device involved in the manufacture of a semiconductor device, an identification mark showing a manufacturing condition, or an identification mark showing the end of any one of the manufacturing processes. A semiconductor device comprising means for forming in the semiconductor device, and means for reading a manufacturing number or a processing condition from an identification mark formed on the semiconductor device in a conveyance path of the semiconductor device. Manufacturing equipment. 23. A hole is formed in a semiconductor substrate on a back surface or a side surface of an element formation surface of a semiconductor device, or a thin film formed on a back surface or a side surface of the semiconductor substrate surface of the element formation surface,
Depending on the depression, the thin film, or the ion-implanted region, a symbol unique to the manufacturing apparatus of the semiconductor device that is the workpiece, a symbol indicating the manufacturing condition, a symbol indicating the end of the process, or the like is described, and at least one of these symbols is described. An apparatus for manufacturing a semiconductor device, characterized by having a means for reading. 24. In a semiconductor device manufacturing apparatus having a plurality of processing means, the processing order or processing conditions are determined by reading the processing conditions of the semiconductor device previously formed in the semiconductor device, and the processing is completed. A semiconductor device manufacturing apparatus, wherein a symbol indicating a processing step is formed in a region on the semiconductor device. 25. In a method of manufacturing a semiconductor device, information of at least one of a symbol unique to the manufacturing device of the semiconductor device formed on the semiconductor device, a symbol indicating a manufacturing condition, and a symbol indicating a process end is read. A method of manufacturing a semiconductor device, characterized in that the processing of the semiconductor device is controlled by the information. 26. A semiconductor device manufacturing apparatus, wherein a processing order or processing conditions are controlled by reading a manufacturing number or processing conditions of the semiconductor device formed in advance on the semiconductor device. Device manufacturing method. 27. A semiconductor device manufacturing apparatus having a plurality of processing means, wherein the next processing method is selected by reading a symbol representing the already completed processing formed on the semiconductor device. Device manufacturing method.