JPH06334081A - Mold structure for semiconductor pellet and manufacture thereof - Google Patents
Mold structure for semiconductor pellet and manufacture thereofInfo
- Publication number
- JPH06334081A JPH06334081A JP5119622A JP11962293A JPH06334081A JP H06334081 A JPH06334081 A JP H06334081A JP 5119622 A JP5119622 A JP 5119622A JP 11962293 A JP11962293 A JP 11962293A JP H06334081 A JPH06334081 A JP H06334081A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- semiconductor
- electrode
- lead frame
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000008188 pellet Substances 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 description 12
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000007789 sealing Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000006071 cream Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Dicing (AREA)
Abstract
(57)【要約】
【目的】 半導体ペレットをリードフレームに導電接続
する際のスループットの向上を図り、且つ、配線構造を
強くして歩留り向上を図る。
【構成】 ペレット１の２つの面１Ａ，１Ｂにはブロッ
ク状の金属部材３Ａ，３Ｂの一方の接合面３Ａ1，３Ｂ1
が接着され、他の接合面３Ａ2，３Ｂ2がリードフレーム
の２つの電極部２Ａ，２Ｂに接続されて、ペレット上の
２つの電極とリードフレームとが導電接続される。ペレ
ット１と金属部材３Ａ，３Ｂとを接合させる工程、該金
属部材３Ａ，３Ｂとリードフレーム２とを接続させる工
程を、多数のペレットに対して同時に行うことができる
ため（バッチ処理）、スループットが向上する。又、ペ
レットとリードとの接続にブロック状の金属部材３Ａ，
３Ｂが用いられているため、モールドの配線構造が外力
に強いものとなり歩留りが向上する。
(57) [Abstract] [Purpose] To improve the throughput when conductively connecting a semiconductor pellet to a lead frame, and to strengthen the wiring structure to improve the yield. [Structure] The two surfaces 1A, 1B of the pellet 1 are provided with one bonding surface 3A 1 , 3B 1 of one of the block-shaped metal members 3A, 3B.
Are bonded and the other joint surfaces 3A 2 and 3B 2 are connected to the two electrode portions 2A and 2B of the lead frame, and the two electrodes on the pellet and the lead frame are conductively connected. Since the step of joining the pellet 1 and the metal members 3A and 3B and the step of connecting the metal members 3A and 3B and the lead frame 2 can be performed simultaneously on a large number of pellets (batch processing), throughput is improved. improves. In addition, the block-shaped metal member 3A for connecting the pellet and the lead,
Since 3B is used, the wiring structure of the mold is strong against external force and the yield is improved.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の封止技術
さらにはリードフレームを用いた半導体ペレットの樹脂
モールドによる封止に適用して特に有効な技術に関し、
例えばダイオード等の２つの電極を有する半導体ペレッ
トの封止に利用して有用な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device sealing technique, and more particularly to a technique which is particularly effective when applied to resin pellet sealing of a semiconductor pellet using a lead frame.
For example, the present invention relates to a technique useful for sealing a semiconductor pellet having two electrodes such as a diode.
【０００２】[0002]
【従来の技術】ダイオード等、２つの電極が上面と下面
に夫々形成された半導体ペレットを、リードフレーム上
に搭載し、これを樹脂モールドにて封止する構造として
は、例えば図７に示す、リードマウント形パッケージ構
造が公知である。このリードマウント形パッケージ構造
では、半導体ペレット１の上面１Ａ及び下面１Ｂに夫々
形成された２つの電極のうち、一方の電極（１Ａ側）を
リードフレーム２２の一方の電極部（ポスト部）２２Ａ
に接合させ、他方の電極（１Ｂ側）を、細い金線からな
るボンディングワイヤ２３を用いてリードフレームの他
方の電極部（タブ部）２２Ｂに導電接続させており、そ
の外側より樹脂モールド２４にて封止されるようになっ
ている。2. Description of the Related Art As a structure in which a semiconductor pellet having two electrodes, such as a diode, formed on the upper surface and the lower surface, is mounted on a lead frame and is sealed with a resin mold, for example, is shown in FIG. Lead mount package structures are known. In this lead mount type package structure, one electrode (1A side) of the two electrodes formed on the upper surface 1A and the lower surface 1B of the semiconductor pellet 1 is connected to one electrode portion (post portion) 22A of the lead frame 22.
, And the other electrode (1B side) is conductively connected to the other electrode portion (tab portion) 22B of the lead frame by using a bonding wire 23 made of a thin gold wire. It is designed to be sealed.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
た技術には、次のような問題のあることが本発明者らに
よってあきらかにされた。即ち、上記リードマウント形
パッケージ構造を得るためには、上記ポスト部２２Ａに
半導体ペレット１を取り付けるペレット付け工程、ボン
ディングワイヤ２３をペレットの電極とタブ部２２Ｂ間
に形成するワイヤボンディング工程等が必要である。と
ころで、これらの工程は、１つのペレット毎にその処理
を行わなければならない。このため、複数の製品に対し
て一括してその処理を行なう所謂「バッチ処理」が適用
できず、半導体製造工程のスループットが向上しないと
云う不具合がある。又、上記ボンディング工程に用いら
れる細い金線からなるボンディングワイヤ２３はその強
度が弱く、ボンディング工程後に外力がかかると、ワイ
ヤ変形等の不良が発生しがちであった。However, the present inventors have clarified that the above-mentioned technique has the following problems. That is, in order to obtain the lead mount type package structure, a pelleting step of attaching the semiconductor pellet 1 to the post portion 22A, a wire bonding step of forming the bonding wire 23 between the electrode of the pellet and the tab portion 22B are necessary. is there. By the way, these processes have to be performed for each pellet. Therefore, a so-called "batch process" in which a plurality of products are collectively processed cannot be applied, and there is a problem that the throughput of the semiconductor manufacturing process is not improved. Moreover, the strength of the bonding wire 23 made of a thin gold wire used in the above-mentioned bonding process is weak, and when external force is applied after the bonding process, defects such as wire deformation are likely to occur.
【０００４】本発明は、かかる事情に鑑みてなされたも
ので、半導体ペレットを樹脂モールド等にて封止するに
当たり、複数のペレットに対する処理を一括して行なう
所謂「バッチ処理」を可能としてスループットの向上を
図り、且つ、外力に強い配線構造として歩留り向上を図
るようにした半導体ペレットのモールド構造及びその製
造方法を提供することをその目的とする。この発明の前
記ならびにそのほかの目的と新規な特徴については、本
明細書の記述および添附図面から明らかになるであろ
う。The present invention has been made in view of the above circumstances, and when sealing semiconductor pellets with a resin mold or the like, so-called "batch processing" is possible in which a plurality of pellets are collectively processed, thereby improving throughput. It is an object of the present invention to provide a semiconductor pellet mold structure and a manufacturing method thereof for improving the yield as a wiring structure resistant to external force. The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【課題を解決するための手段】本願において開示される
発明のうち代表的なものの概要を説明すれば、下記のと
おりである。即ち、本発明のモールド構造では、半導体
ペレットの互いに平行な２つの面に夫々形成された２つ
の電極を、リードフレームの２つの電極部に夫々導電接
続させるに当り、上記ペレットの２つの面に、少なくと
も２つの接合面を有するブロック状の２つの電極部材の
一方の接合面を、夫々接合させ、且つ、上記２つの電極
部材の他方の接合面を、リードフレームの２つの電極部
に夫々導電接続させるようにしている。The typical ones of the inventions disclosed in the present application will be outlined below. That is, in the mold structure of the present invention, when two electrodes respectively formed on two parallel surfaces of the semiconductor pellet are conductively connected to the two electrode portions of the lead frame, respectively, the two electrodes are formed on the two surfaces of the pellet. , One bonding surface of each of the two block-shaped electrode members having at least two bonding surfaces is bonded to each other, and the other bonding surface of each of the two electrode members is electrically conductive to the two electrode portions of the lead frame. I am trying to connect.
【０００５】[0005]
【作用】半導体ペレットの２つの電極と上記２つの電極
部材とを接続させる工程、該電極部材とリードフレーム
の電極部とを接続させる工程を行うに当り、複数のペレ
ットに対して一括してその処理を行うことができる（バ
ッチ処理）。又、ペレットとリードとの接続にボンディ
ング用金線が用いられないため、モールド構造が外力に
強いものとなる。When performing the step of connecting the two electrodes of the semiconductor pellet and the two electrode members, and the step of connecting the electrode member and the electrode portion of the lead frame, the plurality of pellets are collectively processed. Processing can be performed (batch processing). Further, since the bonding gold wire is not used for connecting the pellet and the lead, the mold structure becomes strong against external force.
【０００６】[0006]
【実施例】以下、本発明の一実施例を添付図面を参照し
て説明する。図１は本実施例の半導体ペレットのモール
ド構造を示す縦断面図である。このモールド構造では、
ペレット（ダイオード）１の一方の面１Ａ及び他方の面
１Ｂが、電極部材（金属部材）３Ａ，３Ｂに接合され、
更に、この電極部材３Ａ，３Ｂがリードフレーム２の２
つの電極部２Ａ，２Ｂに夫々接続され、これが樹脂モー
ルド４にて封入されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a vertical sectional view showing a mold structure of a semiconductor pellet of this embodiment. In this mold structure,
One surface 1A and the other surface 1B of the pellet (diode) 1 are joined to the electrode members (metal members) 3A, 3B,
In addition, the electrode members 3A and 3B are
The two electrode portions 2A and 2B are connected to each other, which are encapsulated by a resin mold 4.
【０００７】即ち、半導体ダイオード１の一方の面１Ａ
及び他方の面１Ｂではダイオードの２つの電極（図には
現れていない）がその表面に露出されており、この面１
Ａ，１Ｂの表面に長方体の金属部材３Ａ，３Ｂが銀（Ａ
ｇ）ペースト等の導電性接着剤５によって接着されてい
る。このときダイオード１の２つの電極と金属部材３
Ａ，３Ｂが夫々導電接続される。尚、上記ダイオード１
に２つの金属部材３Ａ，３Ｂが接合された構造を「チッ
プ」１０と称する。ところで、上記金属部材３Ａ，３Ｂ
は、ダイオード１との接合面３Ａ1，３Ｂ1の形状が、該
ダイオード１の表面形状と同一であり、又、所定の横幅
ｄ（例えば０．５mm）となっている。しかして、金属部
材３Ａ，３Ｂは、その一側面３Ａ2，３Ｂ2がクリーム半
田等の導電性接着剤６によって、リードフレームの電極
部２Ａ，２Ｂに導電接続される。このようにダイオード
１，金属部材３Ａ，３Ｂ、リード２は、互いに導電接続
された状態で、樹脂モールド４によって封止され、パッ
ケージされた半導体装置が形成される。That is, one surface 1A of the semiconductor diode 1
And on the other facet 1B, the two electrodes of the diode (not shown in the figure) are exposed on its surface.
On the surfaces of A and 1B, rectangular metal members 3A and 3B are silver (A
g) Bonded by a conductive adhesive 5 such as paste. At this time, the two electrodes of the diode 1 and the metal member 3
A and 3B are conductively connected to each other. The above diode 1
The structure in which the two metal members 3A and 3B are joined to each other is referred to as a "chip" 10. By the way, the above metal members 3A, 3B
The junction surfaces 3A 1 and 3B 1 with the diode 1 have the same shape as the surface shape of the diode 1 and have a predetermined lateral width d (for example, 0.5 mm). Thus, the metal member 3A, 3B is a side 3A 2, 3B 2 thereof by conductive adhesive 6 of cream solder or the like, are electrically connected to the electrode portions 2A, 2B of the lead frame. As described above, the diode 1, the metal members 3A and 3B, and the lead 2 are conductively connected to each other and sealed by the resin mold 4 to form a packaged semiconductor device.
【０００８】次に、上記したモールド構造を形成する手
順について、製造フロー説明図（図２）を用いて説明す
る。先ず、ダイオード等の半導体素子が形成された半導
体ウェハ１１（前工程終了時点のウェハ）の、上面及び
下面に、これと略同一半径で厚さがｄ（０．５mm）の銅
板１３Ａ，１３Ｂが、銀（Ａｇ）ペースト等の導電性接
着剤５にて貼り合わされる（貼合せ工程）。ところで上
記ウェハ１１に形成されたダイオードは、２つの電極
（アノード，カソード）が、当該ウェハの上面及び下面
に露出されるようになっており、このとき、上記２つの
電極は、銅板１３Ａ，１３Ｂに導電接続される。Next, the procedure for forming the above-mentioned mold structure will be described with reference to the manufacturing flow explanatory diagram (FIG. 2). First, on the upper and lower surfaces of a semiconductor wafer 11 (wafer at the end of the previous process) on which semiconductor elements such as diodes are formed, copper plates 13A and 13B having a radius of substantially the same as that of d (0.5 mm) are provided. , And a conductive adhesive 5 such as silver (Ag) paste is used for bonding (bonding step). By the way, in the diode formed on the wafer 11, two electrodes (anode and cathode) are exposed on the upper surface and the lower surface of the wafer. At this time, the two electrodes are formed on the copper plates 13A and 13B. Conductively connected to.
【０００９】次いで、銅板１３Ａ，１３Ｂが両面に接続
された半導体ウェハ１１に対してダイシング工程が行わ
れる。このダイシングによって得られた製品チップ１０
は、半導体ペレット１の両側（１Ａ，１Ｂ）に２つの銅
板（金属部材３Ａ，３Ｂ）が接続された構造となる（図
３）。Then, a dicing process is performed on the semiconductor wafer 11 having the copper plates 13A and 13B connected to both sides. Product chip 10 obtained by this dicing
Has a structure in which two copper plates (metal members 3A and 3B) are connected to both sides (1A and 1B) of the semiconductor pellet 1 (FIG. 3).
【００１０】かかる構造の製品チップ１０が得られる
と、多数のチップ１０が、一括してペレット整列用部材
３０の凹部３１に収納される（チップ収納）。このペレ
ット整列用部材３０は、金属製リボン１２のリードフレ
ームパターンが繰り返されるピッチと、同一間隔にて複
数の凹部３１，３１…が設けられた、金属製又はセラミ
ック製の治具である。図３は図２のIII−III線に沿った
断面図である。この図に示すように、上記凹部３１は唯
１つのチップ１０が収納可能な大きさで、且つ、チップ
の上面１０Ａが整列用部材の上面３０Ａより若干突出す
る深さとなっている。When the product chips 10 having such a structure are obtained, a large number of chips 10 are collectively stored in the recesses 31 of the pellet aligning member 30 (chip storage). The pellet aligning member 30 is a jig made of metal or ceramic in which a plurality of recesses 31, 31 ... Are provided at the same intervals as the pitch at which the lead frame pattern of the metal ribbon 12 is repeated. FIG. 3 is a sectional view taken along line III-III in FIG. As shown in this figure, the recess 31 has a size capable of accommodating only one chip 10 and has a depth such that the upper surface 10A of the chip slightly projects from the upper surface 30A of the alignment member.
【００１１】このように複数の製品チップ１０が、整列
用部材の凹部３１に一括して収納されると、金属製リボ
ン１２がその上面から覆いかぶされる。ところで、上記
金属製リボン１２のリードフレームの電極部１２ａ，１
２ａ…には、クリーム半田等の導電性接着剤６（図には
現れていない）が塗布される。そして、上記ペレット整
列用部材３０と金属製リボン１２との位置合わせは、上
記整列された製品チップ１０の２つの金属部材３Ａ，３
Ｂの一側部３Ａ2，３Ｂ2が、上記リボン側のリードフレ
ームの電極部１２ａ，１２ａ…と当接するように行われ
る（図４）。この結果、クリーム半田６によって、リー
ドフレームの電極部１２ａ，１２ａ…と上記金属部材３
Ａ，３Ｂとが導電接続され、ダイオード１の電極（図示
省略）が上記リードフレーム側に引き出されることとな
る。この状態で樹脂モールド４による封止が行われ、そ
の後の切離し工程によって、図１に示した構造の半導体
装置を得る。尚、上記金属部材３Ａ，３Ｂの横幅ｄ（銅
板の厚さｄ）は、樹脂モールドによる封止時にリードフ
レーム２と、当該金属部材３Ａ，３Ｂとの接続強度が充
分に得られる幅に設定されている。When a plurality of product chips 10 are collectively stored in the concave portion 31 of the aligning member in this manner, the metallic ribbon 12 is covered from the upper surface thereof. By the way, the electrode portions 12a, 1 of the lead frame of the metallic ribbon 12 are
A conductive adhesive 6 (not shown in the figure) such as cream solder is applied to 2a. The pellet aligning member 30 and the metal ribbon 12 are aligned with each other by aligning the two metal members 3A and 3A of the aligned product chips 10.
The one side portions 3A 2 and 3B 2 of B are brought into contact with the electrode portions 12a, 12a ... Of the lead frame on the ribbon side (FIG. 4). As a result, the cream solder 6 allows the lead frame electrodes 12a, 12a ...
A and 3B are conductively connected, and the electrode (not shown) of the diode 1 is led out to the lead frame side. In this state, sealing with the resin mold 4 is performed, and the semiconductor device having the structure shown in FIG. 1 is obtained by the subsequent separating step. The lateral width d (thickness d of the copper plate) of the metal members 3A and 3B is set to a width that can sufficiently obtain the connection strength between the lead frame 2 and the metal members 3A and 3B during sealing by resin molding. ing.
【００１２】以上説明したように本実施例の半導体ペレ
ットのモールド構造によれば、ペレットの２つの面１
Ａ，１Ｂに夫々金属部材３Ａ，３Ｂを接着させ、更に金
属部材３Ａ，３Ｂをリードフレームの２つの電極部２
Ａ，２Ｂに導電接続させて、ペレットの２つの電極とリ
ードフレームとの導電接続を図る構造となっているた
め、ペレットと上記２つの金属部材３Ａ，３Ｂとを接続
させる工程、該金属部材３Ａ，３Ｂとリードフレーム２
とを接続させる工程を、複数のペレットに対して一括し
て行うことができ（バッチ処理）、スループットの向上
が図られる。又、ペレットとリードとの接続に、細い金
線からなるボンディングワイヤが用いられていないた
め、モールド構造が外力に強いものとなり歩留りが向上
する。又、ペレットと金属部材との接着が、ダイシング
前に行われるため、当該導電性接着剤が、製品チップの
不要な部分に付着する虞がなく品質の向上が図られる。As described above, according to the mold structure of the semiconductor pellet of this embodiment, the two surfaces 1 of the pellet are
The metal members 3A and 3B are bonded to A and 1B, respectively, and the metal members 3A and 3B are further connected to the two electrode portions 2 of the lead frame.
Since the two electrodes of the pellet and the lead frame are electrically conductively connected to A and 2B, the step of connecting the pellet and the two metal members 3A and 3B, and the metal member 3A. , 3B and lead frame 2
The step of connecting and can be collectively performed on a plurality of pellets (batch processing), and the throughput can be improved. Further, since the bonding wire made of a thin gold wire is not used for connecting the pellet and the lead, the mold structure is strong against external force, and the yield is improved. Further, since the pellet and the metal member are adhered to each other before the dicing, there is no fear that the conductive adhesive adheres to an unnecessary portion of the product chip, and the quality is improved.
【００１３】以上本発明者によってなされた発明を実施
例に基づき具体的に説明したが、本発明は上記実施例に
限定されるものではなく、その要旨を逸脱しない範囲で
種々変更可能であることはいうまでもない。例えば、上
記実施例では、半導体ペレット１と金属部材３Ａ，３Ｂ
とを接合させるに当たり、素子が形成されたウェハ１１
と当該金属板１３との間の全面に銀ペーストを塗布して
これらを貼り合わせるようにしているが、例えば、ウェ
ハ上のダイオードの電極に相当する領域に、半田バンプ
を夫々設けておき、当該ウェハに上記金属板を合わせた
状態でこれらを互いに接続させてもよい。かかる手法に
よれば、図５に示すように、金属部材３Ａ（３Ｂ）とペ
レット１の電極とが導電接続する部分が、製品チップの
表面に露出しないため、金属部材３Ａ，３Ｂ間のショー
トや、リードフレームに搭載時のショート等が防止され
る。又、上記ショートの発生を防止するために、半導体
ペレットの電極の周辺に、図６に示すように、予め絶縁
部を設けるようにしてもよい。又、本実施例では、導電
性接着剤としてクリーム半田、銀ペーストを用いる例を
示し、電極部材として金属部材（銅板）を例示したが、
これに限定されるものではなく、他の導電性接着剤、他
の導電性部材を用いてもよい。以上の説明では主として
本発明者によってなされた発明をその背景となった利用
分野である半導体ダイオードの樹脂モールドによる封止
技術に適用した場合について説明したが、この発明はそ
れに限定されるものでなく、２つの電極がペレットの上
面／下面に夫々形成された半導体装置の封止技術一般に
利用することができる。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example, in the above embodiment, the semiconductor pellet 1 and the metal members 3A and 3B are used.
Wafer 11 on which elements are formed for bonding and
The silver paste is applied to the entire surface between the metal plate 13 and the metal plate 13 so that they are bonded together. For example, solder bumps are provided in regions corresponding to the electrodes of the diode on the wafer, These may be connected to each other in a state where the metal plate is fitted to the wafer. According to such a method, as shown in FIG. 5, since the portion where the metal member 3A (3B) and the electrode of the pellet 1 are conductively connected is not exposed on the surface of the product chip, a short circuit between the metal members 3A and 3B or , It is possible to prevent short circuit etc. when mounted on the lead frame. Further, in order to prevent the occurrence of the short circuit, an insulating portion may be provided in advance around the electrode of the semiconductor pellet as shown in FIG. Further, in the present embodiment, an example in which cream solder or silver paste is used as the conductive adhesive and a metal member (copper plate) is illustrated as the electrode member,
The present invention is not limited to this, and other conductive adhesives and other conductive members may be used. In the above description, the case where the invention made by the present inventor is mainly applied to the sealing technology by the resin molding of the semiconductor diode which is the field of application which is the background has been described, but the present invention is not limited thereto. It can be used for general sealing technology of a semiconductor device in which two electrodes are formed on the upper surface / lower surface of a pellet, respectively.
【００１４】[0014]
【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば下記
のとおりである。すなわち、半導体ペレットを封止する
に当たり、複数のペレットのパッケージングを一括して
行なう所謂「バッチ処理」が可能となってスループット
の向上が図られ、更に、配線構造が外力に強くなった分
歩留りが向上する。The effects obtained by the representative one of the inventions disclosed in the present application will be briefly described as follows. In other words, when encapsulating semiconductor pellets, so-called “batch processing” is possible in which packaging of multiple pellets is performed in a batch, improving throughput, and further, the wiring structure is more resistant to external force. Is improved.
【図１】本実施例の半導体ペレットのモールド構造を示
す縦断面図である。FIG. 1 is a vertical cross-sectional view showing a mold structure of a semiconductor pellet of this example.
【図２】樹脂モールド構造を形成する手順を示す製造フ
ローの説明図である。FIG. 2 is an explanatory diagram of a manufacturing flow showing a procedure for forming a resin mold structure.
【図３】ダイシングして得られた製品チップがペレット
整列用部材の凹部に収納された状態を示す、図２のIII
−III線に沿った断面図である。FIG. 3 shows a state in which product chips obtained by dicing are stored in the recesses of the pellet alignment member, III in FIG.
It is a sectional view taken along the line III.
【図４】製品チップをリードフレームに搭載した状態を
示す断面図である。FIG. 4 is a cross-sectional view showing a state in which a product chip is mounted on a lead frame.
【図５】ウェハと２枚の金属板との間に半田バンプを設
けてこれらを互いに接続し、その後ダイシングして製品
チップを形成する変形例を示す断面図である。FIG. 5 is a cross-sectional view showing a modified example in which a solder bump is provided between a wafer and two metal plates, these are connected to each other, and then a product chip is formed by dicing.
【図６】半導体ペレットの電極を囲むように絶縁膜を設
けて、当該電極部材をその両面に接合させた変形例を示
す断面図である。FIG. 6 is a cross-sectional view showing a modified example in which an insulating film is provided so as to surround an electrode of a semiconductor pellet, and the electrode member is bonded to both surfaces thereof.
【図７】半導体ペレットをリードフレーム上に搭載しこ
れを樹脂モールドにて封止する従来のモールド構造を示
す断面図である。FIG. 7 is a cross-sectional view showing a conventional mold structure in which a semiconductor pellet is mounted on a lead frame and is sealed with a resin mold.
１ ペレット ２ リードフレーム ２Ａ，２Ｂ 電極部 ３Ａ，３Ｂ 金属部材（電極部材） ３Ａ1，３Ｂ1 ダイオードとの接合面 ３Ａ2，３Ｂ2 リードフレームとの接合面 ４ 樹脂モールド ３０ ペレット整列用部材1 Pellet 2 Lead frame 2A, 2B Electrode part 3A, 3B Metal member (electrode member) 3A 1 , 3B 1 Bonding surface with diode 3A 2 , 3B 2 Bonding surface with lead frame 4 Resin mold 30 Pellet aligning member
Claims (3)
に夫々形成された２つの電極が、リードフレームの２つ
の電極部に夫々導電接続されている半導体ペレットのモ
ールド構造において、 上記半導体ペレットの２つの面には、少なくとも２つの
接合面を有するブロック状の２つの電極部材が、該電極
部材の一方の接合面がペレットの２つの面に夫々接合さ
れて、上記２つの電極と上記２つの電極部材とが夫々導
電接続され、 且つ、上記２つの電極部材の他方の接合面が、リードフ
レームの２つの電極部に夫々導電接続されていることを
特徴とする半導体ペレットのモールド構造。1. A semiconductor pellet mold structure, wherein two electrodes respectively formed on two parallel surfaces of a semiconductor pellet are conductively connected to two electrode portions of a lead frame, respectively. Two block-shaped electrode members each having at least two bonding surfaces are bonded to one surface, and one bonding surface of the electrode member is bonded to each of the two surfaces of the pellet to form the two electrodes and the two electrodes. A mold structure for semiconductor pellets, characterized in that the members are conductively connected to each other, and the other joint surface of the two electrode members is conductively connected to the two electrode portions of the lead frame, respectively.
ペレットの互いに平行な２つの面に接合させるに当り、 素子が形成された半導体ウェハの上面及び下面に、該ウ
ェハと略同一の形状の金属板を、導電性接着剤を用いて
接合させ、 上記半導体ウェハと、これを両面より挟む２枚の金属板
とを、互いに接合させた状態で所定形状にダイシングす
るようにしたことを特徴とする半導体ペレットのモール
ド構造の製造方法。2. When bonding the electrode member according to claim 1 to two surfaces of the semiconductor pellet which are parallel to each other, an upper surface and a lower surface of a semiconductor wafer on which elements are formed have substantially the same shape as the wafer. The metal plate of No. 1 is joined by using a conductive adhesive, and the semiconductor wafer and two metal plates sandwiching it from both sides are joined to each other and diced into a predetermined shape. A method of manufacturing a semiconductor pellet mold structure.
つの面に接合された半導体ペレットを、リードフレーム
に装着するに当り、 多数のリードフレームが連なる金属製リボンと、 該金属製リボンのリードフレームのピッチと同一間隔
で、複数の凹部が設けられたペレット整列用部材とを用
意し、 上記ペレット整列用部材の複数の凹部に複数の上記半導
体ペレットを収納し、 上記ペレット整列用部材にて整列された上記複数の半導
体ペレットの夫々の電極部材に、導電性接着剤が塗布さ
れたリード電極部が当接するように上記金属製リボンを
配置し、 上記リード電極部と上記電極部材とを導電接続させるよ
うにしたことを特徴とする請求項２に記載の半導体ペレ
ットのモールド構造の製造方法。3. The two electrode members according to claim 1,
When mounting a semiconductor pellet bonded to one surface on a lead frame, a metal ribbon in which a large number of lead frames are connected and a plurality of recesses are provided at the same intervals as the lead frame pitch of the metal ribbon. A pellet alignment member is prepared, and a plurality of the semiconductor pellets are stored in a plurality of recesses of the pellet alignment member, and each electrode member of the plurality of semiconductor pellets aligned by the pellet alignment member, The metal ribbon is arranged such that the lead electrode portion coated with a conductive adhesive is in contact with the lead electrode portion, and the lead electrode portion and the electrode member are conductively connected to each other. Of manufacturing a semiconductor pellet mold structure according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5119622A JPH06334081A (en) | 1993-05-21 | 1993-05-21 | Mold structure for semiconductor pellet and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5119622A JPH06334081A (en) | 1993-05-21 | 1993-05-21 | Mold structure for semiconductor pellet and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06334081A true JPH06334081A (en) | 1994-12-02 |
Family
ID=14766001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5119622A Pending JPH06334081A (en) | 1993-05-21 | 1993-05-21 | Mold structure for semiconductor pellet and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06334081A (en) |
-
1993
- 1993-05-21 JP JP5119622A patent/JPH06334081A/en active Pending
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