JPH06310571A - Manufacture of film chip carrier - Google Patents

Abstract

PURPOSE:To provide a manufacturing method with an improved productivity and a lower manufacturing cost by simplifying a manufacturing process of the film chip carrier. CONSTITUTION:When a first thin-walled part 17 and a second thin-walled part 18, which are different in thickness, are formed on a flexible film material 11, on the region, except the region where the first and second thin-walled parts are formed, a first resist layer 13 that has a higher preventive capability against etching is formed and on the region of the second thin-walled part, a second resist layer 14 that has lower preventive capability against etching is formed, and by performing a single chemical etching treatment under this condition, the first and the second thin-walled part different in thickness are formed simultaneously.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a film chip carrier used for mounting a semiconductor device chip on a substrate or the like.

[0002]

2. Description of the Related Art Conventionally, a flexible film member of a film chip carrier is often composed of a heat-resistant polymer film layer, and some film layers are provided with a partial difference in thickness. . For example, an extremely thin first thin portion for reinforcing the inner leads is provided in a portion where the semiconductor device chip is mounted, and a bending portion for bending the chip carrier when mounting it together with the chip carrier on a substrate is provided. 2 is formed as a thin portion.

The first thin portion and the second of these film layers
Is formed by partially removing the film layer by an etching process. At this time, the first thin portion and the second thin portion of the film layer have different removal amounts of the film layer at the time of the etching process, and therefore, conventionally, they are formed by performing the etching process in different steps. Was.

[0004]

However, in order to perform etching treatment on the film layer, it is necessary to carry out steps such as resist coating, drying, exposure, development and resist stripping. In the case of forming a plurality of thin portions having different thicknesses, these etching processing steps are repeated a plurality of times. For this reason, there are problems that the number of manufacturing steps of the film chip carrier becomes extremely large, the productivity is poor, and the manufacturing cost is high.

The present invention has been made in view of the above problems, and simplifies the manufacturing process of the film chip carrier,
It is an object of the present invention to provide a manufacturing method that improves productivity and reduces manufacturing cost.

[0006]

To achieve the above object, in the present invention, a plurality of sets of metal wirings are formed on at least one surface side of a flexible film member, and at least a first layer is formed on a film layer of the film member. In a method of manufacturing a film chip carrier provided with a thin portion and a second thin portion thicker than the first thin portion, the film layer is etched to form the first thin portion and the second thin portion. And a second thin portion forming region of the film layer and a second thin portion forming region.
Forming a first resist layer having a high ability to prevent the film layer from being etched in a region other than the thin portion forming region, and forming the first thin layer in the second thin portion forming region of the film layer. A second resist layer having a lower ability to prevent the film layer from being etched than the resist layer is formed, and the first thin wall is formed by a single chemical etching treatment in a state where at least these two resist layers are formed. And the second thin portion are formed at the same time. Here, the first thin portion in the present invention refers to a region in which a film layer thinner than the second thin portion is present.

[0007]

According to the method of manufacturing a film chip carrier according to the present invention, a film etching treatment for forming portions having different thicknesses such as a first thin portion and a second thin portion in a film layer is performed once. Can be done with.

That is, according to the present invention, in the area excluding the first thin portion forming area and the second thin portion forming area on the film layer of the film chip carrier, the film chip carrier having a relatively high etching preventing ability with respect to the film layer. Since the first resist layer is formed, a part of the film layer is removed by the etching process in the first thin portion forming region and the second thin portion forming region. At this time, since the second resist layer having a relatively low etching preventing ability with respect to the film layer is formed in the second thin portion forming region, in the second thin portion forming region, for example, a second resist layer is formed. When a soluble resist is used, etching is started after the second resist layer is removed by the film layer etching solution. Further, when a semi-transmissive resist is used as the second resist layer, the penetration of the etching solution is hindered, and the progress of the etching of the film layer becomes slower than that in the first thin portion forming region.

Here, the progress of the removal of the film layer with respect to the etching solution is roughly proportional to the elapsed time, and when a soluble resist is used for the second resist layer, the etching starts in the second thin portion forming region. There is a time delay until the second resist layer is removed. Therefore, when the film layer in the first thin portion forming region is removed to a desired thickness, a film layer thicker than the first thin portion remains in the second thin portion forming region. .

As described above, in the present invention, the film layer thicker than the first thin portion can be left in the second thin portion forming region by utilizing the time delay due to the second resist layer. On the other hand, even when a semi-transmissive resist is used for the second resist layer, the progress of etching is delayed because the penetration of the etching solution is obstructed by the second resist layer, and the film layer in the first thin portion forming region is formed. When is removed to a desired thickness, the film remains thicker in the second thin portion forming region than in the first thin portion forming portion.

At this time, each is determined by comprehensively considering conditions such as the material of the film layer, the type and use condition of the etching solution, the material and thickness of the second resist layer, and the thickness of each thin portion. There is a need to. For example, when the film layer in the first thin-walled portion forming region is removed to a desired thickness and the film layer in the second thin-walled portion forming region remains thicker than the desired thickness, the second resist layer Can be formed to be thinner, or a material having a faster etching rate can be used to form a thin portion having a desired film thickness. It is also possible to provide, for example, the third or fourth thin-walled portion by changing the conditions such as the thickness and material of the resist applied on the same substrate. In addition, an auxiliary resist layer may be formed in the first thin portion formation region.

Here, examples of the flexible film member used for the film chip carrier include heat-resistant resin films such as polyparabanic acid resin and polyimide resin, and the polyimide resin is preferable.

Examples of the first resist layer having a high etching preventing ability for the polyimide resin etching solution include liquid resists such as asphalt pitch, tar pitch, epoxy resin, cyclized isoprene rubber, and dry films. However, not limited to these, there is no problem as long as it can be easily peeled off after the treatment without being attacked by the etching liquid used. Further, a metal layer such as copper foil may be used as the first resist layer. The first resist layer is preferably one that is not attacked by the etching solution used at all, but because of the relationship with the second resist layer described below, the rate of erosion is extremely slow. It can be used in the same manner as long as it is present, and is not necessarily limited to one that is not eroded at all.

As the second resist layer having a lower etching prevention ability than the first resist layer, one that is more easily dissolved in the etching solution than the first resist layer and one that is more permeable to the etching solution than the first resist layer. Can be used. As a resist that is relatively easily dissolved in an etching solution, a rosin resin, particularly, a rosin-modified maleic acid resin, an epoxy resin, an acrylic resin, or the like, and a resin similar to a base film such as polyimide or maleimide is applied. However, not limited to this, the coating film dissolves uniformly,
Moreover, there is no problem as long as it dissolves in a desired etching time.

Examples of the resist which is relatively permeable to the etching solution include a mixed resist of rosin-modified maleic acid and asphalt pitch, and other resists can be used as long as the coating film allows the etching solution to uniformly penetrate. It doesn't matter.

If the solubility of the second resist layer, which is soluble in the etching solution, is too high, the resist film thickness is considerably increased in order to make a time difference from the intended etching of the first thin portion forming region. The thickness must be increased, which causes problems such as printability, printing accuracy, resist cost, and increase in drying time. On the contrary, in the case of a resist having a low solubility, it is necessary to make the resist film thickness considerably thin, and in this case, it may be difficult to control the resist film thickness. Therefore, it is preferable that the resist is slightly soluble in the etching solution.
A resist having a solubility of about 5 μm / min is desirable.

Even in the case of a semi-transmissive resist, if the resist is too high in transmissivity, the film thickness must be increased, which causes the same problem as in the case of the soluble resist, and the resist having low transmissivity. Makes it difficult to control the film thickness.

The first and second resist layers are selected, for example, according to the alkali resistance of the resist. Therefore,
Even with the same resist, it is possible to transform the resist to convert it from the first resist layer to the second resist layer (or from the second resist layer to the first resist layer) to achieve the purpose. is there.

Specifically, in a photocurable (negative) type photosensitive resist, the curing of the resist proceeds in proportion to the exposure amount of ultraviolet rays. Therefore, for the first resist layer requiring more alkali resistance, The exposure amount is increased, and conversely, the exposure amount of the second resist layer is decreased or the exposure is not performed. This allows the layers made of the same resist to function as the first or second desired resist layer.

In the photo-decomposition (positive) type photosensitive resist, contrary to the case of the photo-curing (negative) type resist described above, the alkali resistance of the resist is lowered depending on the exposure amount, so that the first resist The layer is exposed to a small amount of light or is not exposed, while the second resist layer is exposed to an appropriate amount of light.

In these cases, a more preferable result may be obtained by adding a heat treatment after the exposure to promote the reaction in the exposed portion and to make the difference in the characteristics of the first and second resist layers noticeable. .

When a thermosetting resist is used,
Whether to use the first resist layer or the second resist layer can be selected by selecting the heating temperature and the heating time.

The coating film thickness of the resist layer is determined by the type of resin of the resist, the curing conditions of the resist, the type of etching solution, the etching temperature, the processed film thickness of the thin portion by half etching, etc., as described above. This is not particularly limited.

Examples of the resist coating method used here include a roll coater, a dip coater, a curtain coater, and screen printing. However, the method is not particularly limited as long as the resist can be uniformly coated to a desired film thickness. However, it is more preferable if the pattern printing can be performed because the exposure and development steps can be omitted. Hereinafter, the present invention will be described in more detail through examples.

[0025]

EXAMPLE 1 FIG. 1 shows a manufacturing process of a chip carrier according to a first example of the present invention, and FIG. 2 shows a resist forming state in this manufacturing process. First, the film thickness is 50μ
A copper layer having a thickness of 0.2 μm was formed on the polyimide film 11 having a thickness of m by sputtering, and then electrolytic plating was performed to prepare a two-layer TAB original sheet which was a copper foil layer 12 having a thickness of 18 μm (FIG. 1A).

Then, using a screen printing machine, a cyclized isoprene rubber-based resist (trade name: ZPN-50) is formed on the surface of the polyimide film 11 side of this two-layer TAB original fabric.
No. 0 (manufactured by Nippon Zeon Co., Ltd.) in a predetermined pattern with a thickness of 5 μm and dried by a far-infrared heater, and then the resist is cured with a non-contact ultraviolet exposure machine at an exposure amount of 150 mj / cm ² , A resist layer 13 was formed (FIG. 1B).

That is, the first resist layer 13 is the polyimide film 11 used in the subsequent etching process.
2A, which is insoluble in the etching solution of FIG. 2A, and becomes a bent portion of the chip carrier and a formation region 14 of the first thin portion 17 which becomes the device chip mounting portion, as shown by the diagonally-downward portion in FIG. 2A. Forming area 1 of second thin portion 18
It is formed by applying a resist on a pattern other than 5 and 5.

On the surface on which the first resist layer 13 is formed, an epoxy acrylate resin (trade name RER
-10, manufactured by Taiyo Ink Co., Ltd.) was applied in a predetermined pattern with a screen printing machine in a thickness of 10 μm, dried and then exposed with ultraviolet rays to an exposure amount of 50 mj / cm ²
Then, the resist was cured to form the second resist layer 16 (FIG. 1C).

That is, the second resist layer 16 is the polyimide film 11 used in the subsequent etching process.
2B is soluble in the etching liquid of FIG. 2B, and is formed by applying a resist in a pattern that masks the formation region 15 of the second thin portion 18 and the peripheral portion thereof, as shown by the hatched portion on the lower left of FIG. 2B. It was done.

Next, the two-layer TAB original fabric on which the resist layers 13 and 16 are formed is immersed in a polyimide etching solution consisting of an aqueous solution of potassium hydroxide to etch the polyimide film 11 at 40 ° C. for 25 minutes to obtain a device. Etching was terminated when the film thickness of the chip mounting portion (first thin portion 17) reached 5 μm.

At the time of this etching, the second resist layer 16 is also eroded and removed by the etching solution, and by this, the etching of the film layer in the region 15 where the second thin portion 18 is formed is started. Causes a time difference with respect to a portion exposed from the resist pattern (formation region 14 of first thin portion 17). Due to this time difference, the start of the etching of the polyimide film in the region 15 where the second thin portion 17 (folded portion) is formed is delayed, and when the etching is finished, the portion covered with the second resist layer 16 has a thickness of 25 μm. A thin polyimide film remained (FIG. 1D).

Then, this is immersed in a dedicated stripping solution made of dichlorobenzene to strip off the remaining first resist layer 13 from the film 11, and 5 μm is put on the device chip mounting portion.
m first thin-walled portion 17 and the bent portion is 25 μm
A chip carrier provided with the second thin portion 18 was obtained (FIG. 1E).

(Embodiment 2) Next, a second embodiment of the present invention will be described with reference to FIGS. First, the film thickness is 50 μm
A copper layer having a thickness of 0.2 μm was formed on the polyimide film 21 of No. 2 by sputtering, and then electrolytic plating was performed to produce a two-layer TAB original fabric as a copper foil layer 22 having a thickness of 18 μm (FIG. 3A).

Next, using a roll coater, this two-layer T
A photosensitive resist of epoxy acrylate resin (product name PER
-10, manufactured by Taiyo Ink Co., Ltd.) is applied over the entire surface to a thickness of 30 μm and dried by a far infrared heater to form a resist film 2.
9 was formed (FIG. 3B).

Then, using a non-contact type UV exposure machine, an exposure amount of 200 mj / c was obtained by the mask pattern shown in FIG. 4A.
Patterning was carried out with m ² and then overexposure was carried out with a mask pattern shown in FIG. 4B at an exposure dose of 50 mj / cm ² . The mask pattern shown in FIG. 4A is a pattern formation region of the first resist layer 13 in the first embodiment (see FIG.
The exposure light is irradiated only to the region 121 corresponding to the diagonally right downward slope portion of A), and the shape is such that each of the formation regions 124 and 126 of the first thin portion and the second thin portion is shielded from light. Has become. The mask pattern shown in FIG. 4B has a shape such that only the formation region 125 of the first thin portion that becomes the device chip mounting portion is shielded from light and the other region 122 is irradiated with the exposure light.

Since this epoxy acrylate resin photosensitive resist is photo-curable, the resist film 29 is cured in proportion to the exposure amount. Therefore, by performing the above-described two exposures, the resist in the areas exposed by the mutual patterns of FIGS. 4A and 4B is completely cured, and
The resist in the area exposed with only the pattern B was in a semi-cured state.

After this exposure operation, when this was developed with a dedicated developing solution containing 1,1,1, trichloroethane, the area cured by exposure (including the semi-cured area)
The resist in the portion 24 except for is removed, and the cured first resist layer 23 and the semi-cured second resist layer 2 are removed.
6 and 6 were formed (FIG. 3C).

The two-layer TAB raw sheet having the first resist layer 23 and the second resist layer 26 thus formed is dipped in a polyimide etching solution composed of an aqueous potassium hydroxide solution to etch the polyimide film 21. Although the treatment was performed, the second resist layer 26 in the semi-cured state was gradually eroded by this etching solution.

The polyimide film 2 in the formation area portion 24 of the first thin portion 27 which becomes the device chip mounting portion
When the thickness of 1 was 5 μm (25 minutes at 40 ° C.), the etching was terminated. As a result, the second thin resist layer 26 in the semi-cured state was formed in the region where the second thin portion 28 to be the bent portion was formed. A polyimide film having a thickness of 25 μm remained due to the time difference until the complete removal of (FIG. 3D).

Then, this is immersed in a dedicated stripping solution made of methylene chloride to strip off the remaining cured first resist layer 23, and as shown in FIG. 3E, a device chip mounting portion having a film thickness of 5 μm is formed. A chip carrier provided with the first thin portion 27 and the second thin portion 28 having a film thickness of 25 μm as the bent portion was obtained.

(Third Embodiment) Next, a third embodiment of the present invention will be described with reference to FIGS. First, a 0.2 μm copper layer was formed on a polyimide film 11 having a thickness of 50 μm by sputtering, and then electrolytic plating was performed to form a 18 μm copper foil layer 12 into a two-layer TAB original fabric (FIG. 1A). ).

Then, using a screen printing machine, a cyclized isoprene rubber-based resist was applied in a predetermined pattern to a thickness of 5 μm on the polyimide film side surface of this two-layer TAB raw material, and dried by a far infrared heater. The resist was cured by a non-contact ultraviolet exposure device at an exposure dose of 150 mj / cm ² to form a first resist layer 13 (FIG. 1).
B). The first resist layer 13 is insoluble in the etching liquid of the polyimide film 11 used in the subsequent etching process, and as shown by the hatched portion on the lower right of FIG. The first thin wall portion 17 and the second thin wall portion 18 serving as the bent portion are formed by applying a resist to a pattern excluding the formation regions 14 and 15, respectively.

Further, a resist (trade name: X-77, manufactured by Taiyo Ink Co., Ltd.) made of a rosin-modified maleic acid resin having a thickness of 15 μm was formed on the surface on which the first resist layer 13 was formed by a screen printing method. To form a second resist layer 16 by applying a predetermined pattern and drying in a clean oven (FIG. 1C). This second resist layer 1
6 does not dissolve in the etching solution of the polyimide film 11 used in the subsequent etching step, but since it penetrates the etching solution, the polyimide film 11 underlying the second resist layer 16 is etched. You can

As shown in FIG. 2B, the second resist layer 1
Reference numeral 6 denotes a formation region 1 of the second thin portion 18 to be a bent portion.
5 is formed by applying a resist in a pattern masking 5 and its periphery.

Next, the two-layer TAB original fabric on which the resist layers 13 and 16 were formed was dipped in a polyimide etching solution containing an aqueous potassium hydroxide solution to etch the polyimide film 11. This etching is performed at 40 ° C. for 25 minutes, and the thickness of the polyimide film in the formation region 14 of the first thin portion 17 that becomes the device chip mounting portion is 5 μm.
The etching was terminated when the m was reached.

At the time of this etching, the second resist layer 16 permeates an etching solution to finally start the erosion of the underlying polyimide film layer by etching.
It remains unmelted. This is the second etching solution
Due to the time difference between the penetration of the resist layer 16 and the start of the erosion of the underlying polyimide film layer, the region where the second resist layer 16 is formed (the formation region 15 of the second thin portion 18 to be the bent portion). 2) the start of etching the polyimide film was delayed, and at the time when the above etching was completed, the polyimide film with a thickness of 25 μm remained in the portion covered with the second resist layer 16 (FIG. 1).
D).

Then, the first resist layer 13 and the second resist layer 16 which remain by immersing this in a dedicated stripping solution made of dichlorobenzene are stripped from the film, and a device chip mounting portion having a film thickness of 5 μm is formed. 1 thin section 17
And a second thin portion 18 having a film thickness of 25 μm as a bent portion.
A chip carrier with and was obtained.

(Embodiment 4) FIG. 5 shows a manufacturing process of a chip carrier according to a fourth embodiment of the present invention, and FIG. 6 shows a resist forming state in this manufacturing process. First, the film thickness 50
A 0.2-μm-thick copper layer was formed on the μm-polyimide film 31 by sputtering, and then electrolytically plated to form a 18-μm-thick copper foil layer 32 into a two-layer TAB original fabric (FIG. 5A).

Next, using a screen printing machine, a cyclized isoprene rubber-based resist (trade name: ZPN-50) is formed on the surface of the two-layer TAB raw material on the side of the polyimide film 31.
No. 0 (manufactured by Nippon Zeon Co., Ltd.) in a predetermined pattern with a thickness of 5 μm and dried by a far-infrared heater, and then the resist is cured with a non-contact ultraviolet exposure machine at an exposure amount of 150 mj / cm ² , A resist layer 33 was formed (FIG. 5B).

That is, the first resist layer 33 is insoluble in the etching liquid of the polyimide film 1 in the subsequent etching step, and is mounted on the device chip as shown by the hatched portion on the lower right in FIG. 6A. Part 1
Pattern except for the formation region 34 of the thin portion 37, the formation region 35a of the second thin portion 38 serving as the outer lead supporting portion, and the formation region 35b of the third thin portion 39 serving as the bent portion of the chip carrier. It is formed by applying a resist to.

From the surface on which the first resist layer 33 is formed, an epoxy acrylate resin (trade name RER-10, manufactured by Taiyo Ink Co., Ltd.) is applied by a screen printer.
First, a resist consisting of is applied in a predetermined pattern to the formation region 35a of the second thin portion 38 and dried until it cannot be touched by the finger (FIG. 6B), and then similarly the third thin portion 3 is formed.
The same resist is applied to the formation region 35b of No. 9 in a predetermined pattern and dried until it cannot be touched with a finger (FIG. 6C), and these are cured by irradiation with ultraviolet rays at an exposure dose of 50 mj / cm ² , and each second resist layer. 36a and the 3rd resist layer 36b were formed (FIG. 5C).

The second resist layer 36a and the third resist layer 36b are soluble in the etching solution for the polyimide film 31 in the subsequent etching step, and therefore the film thickness depends on the coating thickness. It is possible to control the etching amount of the second thin wall portion 38 and the third thin wall portion 39 as shown in FIG. 5D.

Next, these resist layers 33 and 36 are formed.
The two-layer TAB raw material on which a and 36b are formed is dipped in a polyimide etching solution composed of an aqueous solution of potassium hydroxide, and the polyimide film 31 is etched at 40 ° C. for 25 minutes to form a first thin portion serving as a device chip mounting portion. The etching was terminated when the film thickness of 37 reached 5 μm.

During this etching, the second and third resist layers 36a and 36b are also eroded and removed by the etching solution, but the second and third resist layers 36a and 36b are removed.
Of the first thin wall portion exposed from the resist pattern before the film layer is etched in the formation regions 35a and 35b of the second thin wall portion 38 and the third thin wall portion 39, respectively. A unique time difference occurs with respect to the formation region of the portion 37. Due to this time difference, the etching start of the film in the formation region 35a of the second thin portion 38 is delayed, the etching start of the film in the formation region 35b of the third thin portion 39 is further delayed, and the time point when the above etching is completed. Then, thin polyimide films having different thicknesses remained in the portions covered with the second and third resist layers 36a and 36b (FIG. 5D).

Then, the remaining first resist layer 33 is peeled from the film by immersing it in a dedicated stripping solution made of dichlorobenzene, and a device chip mounting portion is provided with a first thin portion 37 having a thickness of 5 μm. A chip carrier having a second thin portion 38 of 10 μm in the outer lead supporting portion and a third thin portion 39 of 25 μm in the bent portion was obtained (FIG. 5E).

(Reference Example) Next, a reference example of the present invention will be described with reference to FIG. In this example, similarly to the above-described respective examples, on the polyimide film 41 having a film thickness of 50 μm,
A 0.2-μm copper layer was formed by sputtering, and then this was electrolytically plated to form a 18-μm copper foil layer 42 into a two-layer TAB original fabric (FIG. 7A).

Next, using a roll coater, a two-layer TAB is formed.
Cyclic isoprene rubber-based resist (brand name ZPN-100 manufactured by Zeon Corporation) on the original polyimide film surface
Was coated on the entire surface in a thickness of 10 μm and dried by a far infrared heater. Subsequently, the mask pattern in FIG. 4B was exposed with an exposure amount of 200 mj / cm ² using a non-contact type UV exposure machine, and this was developed with a dedicated developer to form a preliminary resist layer 43 (FIG. 7B).

This was immersed in a polyimide etching solution composed of an aqueous solution of potassium hydroxide at 40 ° C. for 5 minutes to remove the polyimide film 41 layer having a thickness of 20 μm by etching (FIG. 7C). Then, the preliminary resist layer 43 is peeled off by using a peeling solution made of dichlorobenzene,
A hole 44 having a depth of 20 μm in the formation region of the thin portion 47 of
Was formed (FIG. 7D).

A hole 44 is formed in the formation region of the first thin portion 47.
The same process is repeated again in the state in which the resist is formed, and the resist is applied to the entire surface including the hole 44.
The mask pattern shown in A was exposed at an exposure dose of 200 mj / cm ² and developed with a dedicated developer (FIG. 7E).

In this state, a portion which is not originally removed by etching, that is, a formation region of the first thin portion 47 which becomes the device chip mounting portion and a formation region of the second thin portion 48 which becomes the bent portion are excluded. The resist layer 45 is formed on the portion, and the resist layer 45 is formed in the region that becomes the first thin portion 47.
The hole 44 having a depth of μm is formed to expose the film layer, and the original film surface is exposed in the region to be the second thin portion 48.

Here, the remaining resist layer 45 is considered as the first resist layer in the present invention, and the film layer portion 46 up to a depth of 10 μm from the film surface in the region to be the second thin portion 48 is used as the second resist layer. Can be considered a layer. Then, by etching the polyimide film 41 in this state, a film chip carrier having thin portions 47 and 48 having different thicknesses can be prepared as in the above-described embodiments.

That is, the intermediate product in the state shown in FIG. 7E is dipped in a polyimide etching solution consisting of an aqueous solution of potassium hydroxide, and the film thickness of 30 which remains in the region to be the first thin portion 47 is reduced.
If the polyimide film layer of μm is removed by etching until it becomes 5 μm, it becomes a bent part at that time.
A thin polyimide film layer having a film thickness of 25 μm remains in the formation region of the thin portion 48 of FIG. 7 (FIG. 7F).

Etching is completed in this state, and thereafter,
If the resist is stripped using a stripping solution made of dichlorobenzene, as shown in FIG. 7G, the device chip mounting portion has a first thin portion 47 with a film thickness of 5 μm and is bent as shown in FIG. 7G. Second thin portion 4 having a film thickness of 25 μm
A chip carrier with 8 can be formed.

The chip carrier manufacturing method described here may be applied to a batch type in which the chip carriers are one by one, or a continuous type such as a tape carrier.

[0065]

As described above, according to the method for manufacturing a chip carrier of the present invention, film etching for forming a plurality of thin portions having different thicknesses on a film layer is performed by one etching process. Therefore, as compared with the conventional method in which etching is performed in separate steps, overlapping steps such as drying, curing, and peeling of the resist can be omitted.

Therefore, the manufacturing process of the chip carrier is greatly simplified, the productivity can be improved and the manufacturing cost can be reduced, and the chip carrier having a complicated structure can be produced relatively easily. There is.

[Brief description of drawings]

FIG. 1 is an explanatory view sequentially showing manufacturing steps in a manufacturing method of a film chip carrier according to a first embodiment and a third embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a formation state of a resist layer in each of the examples.

FIG. 3 is an explanatory view sequentially showing manufacturing steps in a method for manufacturing a film chip carrier according to the second embodiment of the present invention.

FIG. 4 is an explanatory diagram showing an exposure mask pattern used for forming a resist layer in the above-mentioned embodiment.

FIG. 5 is an explanatory view sequentially showing manufacturing steps in a method for manufacturing a film chip carrier according to the fourth embodiment of the present invention.

FIG. 6 is an explanatory diagram showing a formation state of a resist layer in the above example.

FIG. 7 is an explanatory diagram showing a manufacturing process in a method of manufacturing a film chip carrier according to a reference example of the present invention.

[Explanation of symbols]

 11, 21, 31 ... Polyimide film 12, 22, 32 ... Copper foil layer 13, 23, 33 ... First resist layer 16, 26, 36a ... Second resist layer 17, 27, 37 ... First thin portion 18, 28, 38 ... Second thin portion

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshio Mugishima 2-6-1, Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd.

Claims (1)

[Claims] 1. A flexible film member is formed with a plurality of sets of metal wiring on at least one surface side, and at least a first thin portion and a thicker portion than the first thin portion are formed in a film layer of the film member. In the method of manufacturing a film chip carrier having a second thin portion, in the method of etching the film layer to provide the first thin portion and the second thin portion, the first of the film layers is formed. In a region excluding the thin-walled portion forming region and the second thin-walled portion forming region, a first resist layer having a high ability to prevent the film from being etched by an etching solution is formed, A second resist layer having a lower ability to prevent the film layer from being etched than the first resist layer is formed in the second thin portion forming region, and at least these two resist layers are formed. Film chip manufacturing method of the carrier and forming a single chemical etching process in performed in a state with the first thin portion and a second thin portion at the same time.