JPH06302645A - Terminal connection method of electronic components, electronic equipment connected according to the connection method and terminal connection bump therefor - Google Patents
Terminal connection method of electronic components, electronic equipment connected according to the connection method and terminal connection bump thereforInfo
- Publication number
- JPH06302645A JPH06302645A JP5088244A JP8824493A JPH06302645A JP H06302645 A JPH06302645 A JP H06302645A JP 5088244 A JP5088244 A JP 5088244A JP 8824493 A JP8824493 A JP 8824493A JP H06302645 A JPH06302645 A JP H06302645A
- Authority
- JP
- Japan
- Prior art keywords
- terminal electrode
- bump
- substrate
- light
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 60
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims 1
- 239000007767 bonding agent Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】Detailed Description of the Invention
【0001】[0001]
【産業上の利用分野】この発明は、電子部品の端子間接
続方法と、この接続方法で一体化した複数の基板を有す
る電子機器または受光素子と発光素子を有する原稿読み
取り装置、およびその端子接続用の積層型金属ワイヤバ
ンプに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of connecting terminals of electronic parts, an electronic device having a plurality of substrates integrated by this connecting method, or a document reading apparatus having a light receiving element and a light emitting element, and a terminal connection thereof. For laminated metal wire bumps for automobiles.
【0002】[0002]
【従来の技術】従来、電子部品を基板の配線パターンに
接続するときに、電子部品の端子と基板に設けた端子間
の対面する端子電極間方向の接続には、対向する電極面
間に異方性導電膜や導電性粒子を介して接続する方法、
あるいは半田やボンディングによって端子上にバンプを
形成しこのバンプを介して両者を接続する方法が知られ
ている。異方性導電膜や導電性粒子を用いて接続する方
法は、プロセスが簡単である一方、微細ピッチの端子を
形成することが困難であるばかりでなく、耐熱性が低い
などの問題があり、また、半田付けによる方法は、信頼
性が高いが端子電極にメタライズ処理を施す必要があ
り、工程が複雑になるなどの欠点がある。これに対し
て、例えば、電子情報通信学会技術研究報告(CPM8
9−45,pp7−12)“スタットバンプ方式による
COG実装方式”に開示されるようなボンディングによ
り形成する金属バンプを用いる方法は、微細ピッチの端
子にも対応でき、メタライズ処理も不要であるなどの利
点を持っている。2. Description of the Related Art Conventionally, when connecting an electronic component to a wiring pattern on a substrate, the terminals of the electronic component and the terminals provided on the substrate are connected to each other in the direction of facing terminal electrodes. A method of connecting through a conductive film or conductive particles,
Alternatively, a method is known in which a bump is formed on a terminal by soldering or bonding and both are connected via the bump. The method of connecting using an anisotropic conductive film or conductive particles, while the process is simple, not only difficult to form terminals of fine pitch, there is a problem such as low heat resistance, Further, the soldering method has high reliability, but has a drawback that the terminal electrode needs to be subjected to metallizing treatment, which complicates the process. On the other hand, for example, the Technical Report of the Institute of Electronics, Information and Communication Engineers (CPM8
9-45, pp7-12) The method of using metal bumps formed by bonding as disclosed in "COG mounting method by stat bump method" can be applied to fine pitch terminals and does not require metallization. Have the advantage of.
【0003】図4は、従来の金属バンプの形状と製造過
程を示すもので、同図(a)において、金属ワイヤ1の
一端を電気放電等によって球状の端部11に形成し、同
図(b)に示すように、これを基板3上に形成した端子
電極2上に押し付け超音波併用の熱圧着によって接続し
て接続部12を形成する。その後、同図(c)に示すよ
うに、金属ワイヤ1に折り曲げ部14を形成して他端1
5を切断して金属バンプを形成している。すなわち、こ
の金属ワイヤバンプは、その一端12は端子電極2に接
続しているが、他端15は遊端となっている。FIG. 4 shows the shape and manufacturing process of a conventional metal bump. In FIG. 4 (a), one end of the metal wire 1 is formed on a spherical end 11 by electric discharge or the like, As shown in b), this is pressed onto the terminal electrode 2 formed on the substrate 3 to be connected by thermocompression bonding with ultrasonic wave, and the connection portion 12 is formed. After that, as shown in FIG. 3C, the bent portion 14 is formed on the metal wire 1 and the other end 1 is formed.
5 is cut to form metal bumps. That is, one end 12 of this metal wire bump is connected to the terminal electrode 2, but the other end 15 is a free end.
【0004】上記従来技術による金属ワイヤバンプを用
いた接続は、液晶表示素子などのように接続する電子部
品の端子電極と基板上の端子電極との間隙が数十μm程
度である場合には有効であるが、この間隙が50μm以
上となる電子部品を接続する場合は金属バンプの高さが
足りず使用することが困難である。類似した方法とし
て、特開平1−227458号公報に記載されている方
法がある。これは金属ワイヤを用いてファーストボンデ
ィングのみ行い、セカンドボンディングせずにレーザー
光によりワイヤを切断して凸状のバンプを形成するもの
である。しかし、この方法は、形成できるバンプの高さ
が精々50μmであるため、本発明が適用されるような
対向電極間の間隙が大きくなる原稿読み取り装置には適
用できない。The connection using the metal wire bump according to the above-mentioned conventional technique is effective when the gap between the terminal electrode of the electronic component to be connected such as a liquid crystal display element and the terminal electrode on the substrate is about several tens of μm. However, when connecting an electronic component having a gap of 50 μm or more, it is difficult to use because the height of the metal bump is insufficient. As a similar method, there is a method described in JP-A-1-227458. In this method, only the first bonding is performed using a metal wire, and the wire is cut by laser light without forming the second bonding to form a convex bump. However, this method cannot be applied to a document reading apparatus in which the gap between the opposing electrodes is large, to which the present invention is applied, because the height of bumps that can be formed is at most 50 μm.
【0005】一方、情報関連機器の中で画像入出力装置
が広く使われており、画像出力装置のひとつであるディ
スプレイには、陰極線管(CRT),液晶表示装置(L
CD),エレクトロルミネッセンス素子(ELD),プ
ラズマ表示装置(PDP)などのいろいろな方法があ
る。高密度実装技術の発展とともにディスプレイ基板上
に駆動ICが直接搭載されるようになり、最近では携帯
できるパーソナルコンピュータや電子手帳などのコンパ
クトなディスプレイをもった装置が開発されている。画
像入力装置のひとつであるイメージセンサは、アモルフ
ァスシリコンなどの光電変換膜を用いた原稿幅のサイズ
をもった密着型ラインイメージセンサが主流になってい
る。この種のイメージセンサに関しては、特開昭53−
119619号公報に開示されたように、紙送りなどの
駆動系がいらない二次元イメージセンサが提案されてい
るが、このような構成のイメージセンサにおいては、走
査のために光源を移動できる照明装置が必要なこと、お
よび、原稿の大きさに律せられて小型化が難しいという
欠点がある。On the other hand, an image input / output device is widely used in information related equipment, and a cathode ray tube (CRT) and a liquid crystal display device (L) are used as a display which is one of the image output devices.
There are various methods such as CD), electroluminescence device (ELD), and plasma display device (PDP). With the development of high-density packaging technology, drive ICs have come to be directly mounted on a display substrate, and recently, a device having a compact display such as a portable personal computer or an electronic notebook has been developed. As the image sensor, which is one of the image input devices, a contact type line image sensor having a size of a document width using a photoelectric conversion film such as amorphous silicon is mainly used. An image sensor of this type is disclosed in JP-A-53-53.
As disclosed in Japanese Patent No. 119619, a two-dimensional image sensor that does not require a drive system such as paper feeding has been proposed. However, in the image sensor having such a configuration, an illumination device that can move a light source for scanning is provided. There is a drawback in that it is difficult to reduce the size because it is required and the size of the original is limited.
【0006】また、これらの表示素子と画像読み取り素
子を同じ基板上の離れた部分に形成し、画像を読み取っ
たすぐ後に表示素子によってモニタするという技術が特
開平1−106467号公報に示されている。しかし、
この公報開示の技術は表示素子と画像読み取り素子とが
別の領域に形成されているため、光源などの照明装置を
付加するとかなり大きな装置になってしまうという欠点
がある。Further, Japanese Patent Laid-Open No. 1-106467 discloses a technique in which these display element and image reading element are formed in distant portions on the same substrate, and the image is read immediately after the image is read. There is. But,
The technique disclosed in this publication has a drawback that a display device and an image reading device are formed in different regions, so that when a lighting device such as a light source is added, the device becomes considerably large.
【0007】[0007]
【発明が解決しようとする課題】本発明はこのような状
況に鑑みて発明されたものであり、本発明の第1の目的
は、対向する端子電極間のギャップ量が数μmから10
0μm以上と広い範囲においても、端子電極間の接続を
可能にする電子部品の端子接続方法を提供することにあ
る。また、本発明の第2の目的は、二次元の発光素子と
受光素子をそれぞれ別の基板に作成し、それぞれの素子
が対向するように二つの基板を所望のギャップを介して
一体に固定させ、発光素子の駆動電極を受光素子基板側
へ高い信頼性を持って接続させる原稿読み取り装置のよ
うな電子機器を提供することにある。本発明の第3の目
的は、上記の接続のための積層状金属ワイヤバンプを提
供することにある。The present invention has been invented in view of such a situation, and a first object of the present invention is to provide a gap between opposing terminal electrodes of several μm to 10 μm.
An object of the present invention is to provide a terminal connection method for electronic components that enables connection between terminal electrodes even in a wide range of 0 μm or more. A second object of the present invention is to make a two-dimensional light emitting element and a light receiving element on separate substrates, and fix the two substrates integrally with each other with a desired gap so that the respective elements face each other. An object of the present invention is to provide an electronic apparatus such as a document reading device that connects the drive electrode of the light emitting element to the light receiving element substrate side with high reliability. A third object of the present invention is to provide a laminated metal wire bump for the above connection.
【0008】[0008]
【課題を解決するための手段】上記本発明の第1の目的
を達成するため、一方の端子電極上にワイヤボンディン
グにより第1の金属ワイヤバンプを形成する工程と、そ
の上に第2の金属ワイヤバンプを形成する工程と、この
工程を複数回繰り返す工程と、最上層の金属ワイヤバン
プの頂部あるいは他方の端子電極上に導電性接着剤を付
着させる工程と、この導電性接着剤を介して両者の端子
電極を接続させる電子部品接続工程からなる。また、上
記発明の第2の目的を達成するため、内面に受光素子と
端子電極をもつ受光素子基板と、内面に発光素子と端子
電極をもつ発光素基板とを対向して一体配置した原稿読
み取り装置が、前記受光素子基板と前記発光素子基板の
何れか一方に形成され端子電極上に形成された積層構造
のバンプ電極と、前記受光素子基板と前記発光素子基板
の何れか他方に端子電極を備え、前記一方の端子電極に
形成された積層構造バンプ電極の頂部または他方の端子
電極に付着させた導電性接着剤によって他方の端子電極
を積層構造バンプ電極に接続しするとともに、前記受光
素子基板と前記発光素子基板との間にギャップ形成用の
透明スペーサを設ける。そして、上記発明の第3の目的
を達成するために、放電により形成したワイヤボールを
端子電極に熱圧着し、ワイヤをクランプした状態でキャ
ピラリツールを引き上げワイヤを切断することにより形
成した凸状のバンプを何層にも積層した積層状金属ワイ
ヤバンプを構成する。In order to achieve the first object of the present invention, a step of forming a first metal wire bump on one terminal electrode by wire bonding and a second metal wire bump thereon. Forming step, repeating this step a plurality of times, attaching a conductive adhesive to the top of the uppermost metal wire bump or the other terminal electrode, and connecting both terminals via this conductive adhesive. It consists of an electronic component connecting step of connecting electrodes. Further, in order to achieve the second object of the above invention, a document reading in which a light receiving element substrate having a light receiving element and a terminal electrode on the inner surface and a light emitting element substrate having a light emitting element and a terminal electrode on the inner surface are integrally arranged facing each other The device has bump electrodes of a laminated structure formed on one of the light receiving element substrate and the light emitting element substrate and formed on a terminal electrode, and a terminal electrode on the other one of the light receiving element substrate and the light emitting element substrate. And the other terminal electrode is connected to the laminated structure bump electrode by a conductive adhesive adhered to the top of the laminated structure bump electrode formed on the one terminal electrode or the other terminal electrode, and the light receiving element substrate A transparent spacer for forming a gap is provided between the substrate and the light emitting element substrate. In order to achieve the third object of the present invention, a wire ball formed by electric discharge is thermocompression-bonded to a terminal electrode, and a capillary tool is pulled up while the wire is clamped to cut the wire. A laminated metal wire bump is formed by stacking a number of bumps.
【0009】[0009]
【作用】本発明によれば、積層状の金属ワイヤーバンプ
を用いることによって高い実装密度を保持したままで電
極との接触面積を大きくとることができるため、接続信
頼性を高くすることができるとともに、基板間のギャッ
プは透明スペーサによって維持されるので、ギャップば
らつきの小さい原稿読み取り装置の構成を実現すること
が可能となる。According to the present invention, by using the laminated metal wire bumps, it is possible to increase the contact area with the electrodes while maintaining a high mounting density, and thus it is possible to improve the connection reliability. Since the gap between the substrates is maintained by the transparent spacer, it is possible to realize the configuration of the document reading device with a small gap variation.
【0010】[0010]
【実施例】以下、実施例に基づいて、本発明を具体的に
説明する。図1は、金属ワイヤバンプの形成工程を説明
する模式図である。図1(a)に示されるように、まず
電気放電等によって例えば金等の良導電性の金属ワイヤ
1の先端を加熱溶融し溶融球状部11を形成する。次い
で、図1(b)に示すように、この溶融球状部11を基
板1の表面に設けた端子電極上2に超音波併用の熱圧着
等によって接続しボール12を形成する。その後、同図
(c)に示すように、金属ワイヤ1をクランプした状態
で図示しないキャピラリツールを引き上げた後、金属ワ
イヤ1を例えばレーザ光によって切断して凸状のバンプ
13−1を形成する。次に、図1(d)に示すように、
金属ワイヤ1の先端を同様の加熱方法によって加熱溶融
して溶融球状部11−2を再度形成する。この球状部1
1−2を、同図(e)に示すように、前回の工程で形成
したバンプ13−1の上部に押し当て超音波併用の熱圧
着等によって接続しバンプ13−1の上にボール12−
2を形成する。その後、同図(f)に示すように、金属
ワイヤ1をクランプした状態で図示しないキャピラリツ
ールを引き上げた後、金属ワイヤ1を同様の切断手法を
用いて切断してバンプ13−1の上に2層目の凸状のバ
ンプ13−2を形成する。図1(g)は、同様の形成方
法を2回繰り返すことによってバンプが4層積み上げら
れた場合を示し、3段目のバンプ13−3および4段目
のバンプ13−4が積み上げられて積層状バンプ13が
形成される。EXAMPLES The present invention will be specifically described below based on examples. FIG. 1 is a schematic diagram illustrating a process of forming a metal wire bump. As shown in FIG. 1A, first, the tip of a metal wire 1 having good conductivity such as gold is heated and melted by electric discharge or the like to form a molten spherical portion 11. Next, as shown in FIG. 1B, the fused spherical portion 11 is connected to the terminal electrode 2 provided on the surface of the substrate 1 by thermocompression bonding or the like using ultrasonic waves to form a ball 12. Thereafter, as shown in FIG. 3C, after pulling up a capillary tool (not shown) while the metal wire 1 is clamped, the metal wire 1 is cut by, for example, a laser beam to form a convex bump 13-1. . Next, as shown in FIG.
The tip of the metal wire 1 is heated and melted by the same heating method to form the molten spherical portion 11-2 again. This spherical part 1
As shown in (e) of the same figure, 1-2 is pressed against the upper portion of the bump 13-1 formed in the previous step and connected by thermocompression bonding or the like combined with ultrasonic waves to connect the ball 12-on the bump 13-1.
Form 2. After that, as shown in FIG. 3F, after pulling up a capillary tool (not shown) while the metal wire 1 is clamped, the metal wire 1 is cut by the same cutting method and placed on the bump 13-1. A second-layer convex bump 13-2 is formed. FIG. 1G shows a case where four layers of bumps are stacked by repeating the same forming method twice, and the bumps 13-3 of the third stage and the bumps 13-4 of the fourth stage are stacked and laminated. Bumps 13 are formed.
【0011】この実施例では、ワイヤ径1を25〜28
μmとすると、ボール12は厚みmが20μm程度、径
nが80〜85μmのボール12が形成される。これを
4層積み上げた積層状バンプ13は100μm程度高さ
Hが得られる。In this embodiment, the wire diameter 1 is 25-28.
Assuming that the thickness of the ball 12 is μm, the ball 12 has a thickness m of about 20 μm and a diameter n of 80 to 85 μm. A height H of about 100 μm is obtained in the laminated bump 13 in which four layers are stacked.
【0012】図2は、図1の製造方法で形成された積層
状バンプの頂部に導電性接着剤を付着する工程を説明す
る図である。基板3の表面に設けた端子電極2の上面に
前記方法で得た積層状金属ワイヤバンプ13が形成され
ており、底面に導電性接着剤5を塗布した接着剤付着治
具4を矢印のように上方から下方に垂直に移動させるこ
とによって積層状金属ワイヤバンプ13の頂部に均一に
接着剤を付着させる。導電性接着剤としては、Agある
いはPd微粉末を添加したエポキシ樹脂が好適である
が、良好な導電性と接着性を有する材料であればこれに
限らず使用することができる。FIG. 2 is a diagram illustrating a step of attaching a conductive adhesive to the tops of the laminated bumps formed by the manufacturing method of FIG. The laminated metal wire bump 13 obtained by the above method is formed on the upper surface of the terminal electrode 2 provided on the surface of the substrate 3, and the adhesive attaching jig 4 having the conductive adhesive 5 applied on the bottom surface thereof is formed as shown by an arrow. By vertically moving from the upper side to the lower side, the adhesive is uniformly attached to the top of the laminated metal wire bump 13. As the conductive adhesive, an epoxy resin added with Ag or Pd fine powder is suitable, but not limited to this as long as it is a material having good conductivity and adhesiveness.
【0013】図3は、図1,2に示した方法で形成され
た積層状金属ワイヤバンプを用いて、発光装置と受光装
置を接続した、第2の発明に係る一体装置を原稿読み取
り装置に適用した実施例の概略の構成を示す断面図であ
り、バンプ部の構造を示す部分拡大図がA図として添え
られている。この実施例の原稿読み取り装置は、受光装
置20と発光装置30とが間隙形成用の透明なスペーサ
40を介して対向配置され一体化されて構成される。FIG. 3 shows an integrated device according to the second invention in which a light emitting device and a light receiving device are connected to each other by using a laminated metal wire bump formed by the method shown in FIGS. It is sectional drawing which shows the schematic structure of the Example which carried out, and the partial enlarged view which shows the structure of a bump part is attached as FIG. The document reading device of this embodiment is configured by integrating a light receiving device 20 and a light emitting device 30 so as to face each other with a transparent spacer 40 for forming a gap therebetween.
【0014】受光装置20は、受光素子基板21の上に
複数の受光素子22が配列されるとともに、該基板21
の一方の端部には各受光素子に接続された受光素子用端
子電極23が設けられ、この端子電極にはリード電極2
4が接続されて構成される。さらに、前記基板21の他
端部には発光素子用端子電極25が設けられ、この端子
電極にはリード電極26が接続されるとともに、この端
子電極の表面には頂部に導電性接着剤16が塗布された
積層状の金属ワイヤバンプ13が設けられている。発光
装置30は、ガラス等の透明な発光素子基板31上に複
数の発光素子32が設けられて構成される。発光素子の
表面は遮光層33で被覆されるとともに、この遮光層に
は前記受光装置20に設けた受光素子22と対向する位
置に入射窓34が設けられている。ガラス基板31の端
部には、各発光素子22に接続された発光素子用端子電
極35が設けられ、受光装置20側の発光素子用端子電
極25上に設けたバンプ13の頂部に設けた導電性接着
剤16に接続されて、発光素子の端子電極を積層状金属
ワイヤバンプ13を介して外部に取り出している。In the light receiving device 20, a plurality of light receiving elements 22 are arranged on a light receiving element substrate 21, and the substrate 21
A light-receiving element terminal electrode 23 connected to each light-receiving element is provided at one end portion of the lead electrode 2.
4 are connected and configured. Further, a light emitting element terminal electrode 25 is provided at the other end of the substrate 21, a lead electrode 26 is connected to the terminal electrode, and a conductive adhesive 16 is provided on the top of the surface of the terminal electrode. The applied laminated metal wire bumps 13 are provided. The light emitting device 30 is configured by providing a plurality of light emitting elements 32 on a transparent light emitting element substrate 31 such as glass. The surface of the light emitting element is covered with a light shielding layer 33, and an entrance window 34 is provided in the light shielding layer at a position facing the light receiving element 22 provided in the light receiving device 20. A light emitting element terminal electrode 35 connected to each light emitting element 22 is provided at an end of the glass substrate 31, and a conductive material provided on the top of the bump 13 provided on the light emitting element terminal electrode 25 on the light receiving device 20 side. The terminal electrode of the light emitting element is connected to the conductive adhesive 16 and is taken out through the laminated metal wire bump 13.
【0015】受光素子基板21と発光素子基板31を受
光素子22および発光素子32がそれぞれ内側になるよ
うに対面させ、また受光素子22と発光素子32のそれ
ぞれの素子の位置が対応するように配置させる。発光素
子基板31はガラス等の透明材料からなり、この発光装
置30の表面、すなわち発光素子32とは反対の面には
原稿6が設置されるようになっている。発光素子32か
らの光は原稿6で乱反射し、この反射光が入射窓34を
通って受光素子22に照射される。また発光素子32か
らの光が直接受光素子22に照射されないように遮光層
33が形成されている。The light receiving element substrate 21 and the light emitting element substrate 31 are opposed to each other so that the light receiving element 22 and the light emitting element 32 are inside, and the positions of the light receiving element 22 and the light emitting element 32 are arranged to correspond to each other. Let The light emitting element substrate 31 is made of a transparent material such as glass, and the original 6 is placed on the surface of the light emitting device 30, that is, the surface opposite to the light emitting element 32. The light from the light emitting element 32 is irregularly reflected by the original 6, and the reflected light is applied to the light receiving element 22 through the entrance window 34. Further, the light shielding layer 33 is formed so that the light from the light emitting element 32 is not directly irradiated to the light receiving element 22.
【0016】このような構成の原稿読み取り装置では、
読み取り解像度の点で発光素子と原稿までの距離と発光
素子と受光素子までの距離は同じであることが望まし
く、またその値は小さいほうが望ましい。この実施例の
構成とした場合、上記値は、発光素子基板の厚みで律さ
れる。すなわち発光素子基板の最小厚は作成プロセス上
のハンドリング等の問題で50〜100μmであるた
め、発光素子と受光素子の距離、すなわち金属ワイヤバ
ンプが必要とする高さは、100μm程度まで形成可能
であることが必要となってくる。本発明の金属ワイヤバ
ンプを用いると、4層程度積層することによって、高さ
100μm程度のバンプを形成することができるので、
本原稿読み取り装置のバンプに適している。さらに、基
板内でのギャップ量は透明な均質な径の球状のスペーサ
を挿入することによって装置の前面にわたって均一に保
つことができる。金属ワイヤバンプの直径は80〜85
μmであることから、8line/mm(125μmピッ
チ)の高い実装密度を保持しながら、100μmという
広いギャップ量を実現できる。In the document reading apparatus having such a structure,
In terms of reading resolution, it is desirable that the distance between the light emitting element and the document and the distance between the light emitting element and the light receiving element are the same, and it is desirable that the value is smaller. In the case of the configuration of this embodiment, the above value is determined by the thickness of the light emitting element substrate. That is, since the minimum thickness of the light emitting element substrate is 50 to 100 μm due to a problem in handling in the manufacturing process, the distance between the light emitting element and the light receiving element, that is, the height required by the metal wire bump can be formed up to about 100 μm. Will be needed. When the metal wire bump of the present invention is used, a bump having a height of about 100 μm can be formed by stacking about four layers.
Suitable for bumps of this document reading device. Furthermore, the amount of gap in the substrate can be kept uniform over the front face of the device by inserting transparent, uniform diameter spherical spacers. The diameter of the metal wire bump is 80-85
Since it is μm, a wide gap amount of 100 μm can be realized while maintaining a high mounting density of 8 line / mm (125 μm pitch).
【0017】上記実施例においては、導電性接着剤を積
層状金属ワイヤバンプの頂部に塗布した例で示したが、
導電性接着剤を端子電極側に例えばスクリーン印刷等に
よって塗布して接続することもできることは勿論であ
る。図3の実施例において、発光素子32には、厚さ1
00μmのガラスからなる発光素子基板31基板の表面
に発光層の材料としてZnS:Mnを用いたEL(el
ectro luminescence)素子を形成し
て使用した。受光素子22には、アモルファスSiによ
って形成されたフォトダイオードを用いた。アモルファ
スSiはプラズマCVD法等により均一な膜を大面積に
容易に着膜できるので、このようなラージエリアのデバ
イスに適している。発光装置としては上記のELに替え
て、その他の様々な発光装置を当然用いることができ
る。In the above embodiment, the conductive adhesive is applied to the top of the laminated metal wire bump, but
Of course, a conductive adhesive can be applied to the terminal electrode side by screen printing or the like for connection. In the embodiment of FIG. 3, the light emitting element 32 has a thickness of 1
EL (el) using ZnS: Mn as the material of the light emitting layer on the surface of the light emitting element substrate 31 substrate made of glass of 00 μm
An electroluminescence element was formed and used. A photodiode formed of amorphous Si is used as the light receiving element 22. Amorphous Si is suitable for such a large area device because a uniform film can be easily deposited on a large area by the plasma CVD method or the like. As the light emitting device, various other light emitting devices can naturally be used instead of the above EL.
【0018】なお、本実施例の原稿読み取り装置にあっ
ては、二次元の発光素子は、原稿照射用の光源として機
能するのは勿論のこと、駆動装置を具備することによっ
て表示装置としても機能させることができる。In the document reading apparatus of this embodiment, the two-dimensional light emitting element not only functions as a light source for illuminating a document, but also functions as a display device by including a driving device. Can be made.
【0019】上記実施例では、発光装置と受光装置を一
体化した原稿読み取り装置を示したが、この例に限定さ
れることなく、例えば、LCD基板と発光装置基板とを
一体化した液晶表示装置等のように、個別の基板上に形
成した表示部と発光部もしくは駆動部を一体化した表示
装置にも適用することができることは勿論であり、その
他の一体化された電子機器にも当然適用することができ
る。In the above embodiment, the document reading device in which the light emitting device and the light receiving device are integrated is shown. However, the present invention is not limited to this example. For example, a liquid crystal display device in which an LCD substrate and a light emitting device substrate are integrated. As a matter of course, the present invention can be applied to a display device in which a display unit and a light emitting unit or a drive unit formed on separate substrates are integrated, and naturally applied to other integrated electronic devices. can do.
【0020】[0020]
【発明の効果】上記したように、金属ワイヤバンプを積
層することによって、100μm程度までの高さを自由
に実現することができるとともに、バンプ頂点にはエポ
キシ系の導電ペーストを一様に付着させ、発光素子基板
上の電極と位置合わせした後に発光素子基板を均一に加
圧し、150℃で10分程度ベークすることによって、
受光素子基板上の電極25と発光素子基板上の電極35
を積層状金属ワイヤバンプ13を介して接続させること
ができる。さらに、本発明によればEL発光素子のよう
に高い駆動電圧で一素子あたり数mA流れる表示素子で
も実装密度を下げることなく電極の接触面積を大きくす
ることができ、信頼性の高い接続が可能となる。またギ
ャップ形成用の粒子により液晶セルと同等のギャップば
らつきの小さい構成にすることができる。以上のよう
に、実装密度の低下を招くことなく、高い信頼性で上下
の電極間の接触を図ることができる。As described above, by stacking metal wire bumps, a height of up to about 100 μm can be freely realized, and an epoxy-based conductive paste is uniformly attached to the bump vertices, After aligning with the electrodes on the light emitting element substrate, the light emitting element substrate is uniformly pressed and baked at 150 ° C. for about 10 minutes,
Electrode 25 on light receiving element substrate and electrode 35 on light emitting element substrate
Can be connected via the laminated metal wire bumps 13. Furthermore, according to the present invention, even in the case of a display element such as an EL light emitting element in which several mA flows per element at a high driving voltage, the contact area of the electrodes can be increased without lowering the mounting density, and highly reliable connection is possible. Becomes In addition, the particles for forming the gap can be configured to have a small gap variation similar to that of a liquid crystal cell. As described above, the upper and lower electrodes can be contacted with high reliability without lowering the mounting density.
【図面の簡単な説明】[Brief description of drawings]
【図1】 本発明に係る金属ワイヤバンプの形状および
該バンプの形成工程を示す模式図。FIG. 1 is a schematic diagram showing a shape of a metal wire bump according to the present invention and a step of forming the bump.
【図2】 本発明に係る接着剤付着工程を説明する説明
図図。FIG. 2 is an explanatory diagram illustrating an adhesive attaching step according to the present invention.
【図3】 本発明に係る原稿読み取り装置の構造を示す
断面図。FIG. 3 is a sectional view showing the structure of a document reading apparatus according to the present invention.
【図4】 従来技術になる金属ワイヤバンプの形状とそ
の形成工程を示す模式図。FIG. 4 is a schematic view showing a shape of a metal wire bump and a forming process thereof according to a conventional technique.
1 金属ワイヤ、 2 端子電極、 3 基板、 4
接着剤付着治具、 5導電性接着剤、 11 溶融球状
部、 12 ボール、 13 バンプ、 16 導電性
接着剤、 20 受光装置、 21 受光装置基板、
22 受光素子、 23 受光素子用端子電極、 2
4,26 リード線、 25 発光素子用端子電極、
30 発光装置、 31 発光装置基板、 32 発光
素子、33 遮光層、 34 入射窓、 35 発光装
置用端子電極。1 metal wire, 2 terminal electrode, 3 substrate, 4
Adhesive attachment jig, 5 conductive adhesive, 11 fused spherical portion, 12 ball, 13 bump, 16 conductive adhesive, 20 light receiving device, 21 light receiving device substrate,
22 light receiving element, 23 light receiving element terminal electrode, 2
4, 26 lead wires, 25 light emitting element terminal electrodes,
30 light emitting device, 31 light emitting device substrate, 32 light emitting element, 33 light shielding layer, 34 incident window, 35 light emitting device terminal electrode.
Claims (5)
続する電子部品の端子接続方法であって、 一方の電子部品に形成された端子電極上の所定位置にワ
イヤボンディングよってバンプを形成する工程と、 前記バンプの上に更にワイヤボンディングによってバン
プを積層形成する工程と、 最上段のバンプの頂部または他方の部品に形成された端
子電極に導電性接着剤を付着させる工程と、 前記導電性接着剤を介して前記一方の電子部品に形成さ
れた端子電極と前記他方の電子部品に形成された端子電
極を接続する電子部品間接続工程からなることを特徴と
する電子部品の端子接続方法。1. A method of connecting terminals of an electronic component for connecting terminals formed on a plurality of electronic components, wherein bumps are formed by wire bonding at predetermined positions on a terminal electrode formed on one electronic component. A step of further forming a bump on the bump by wire bonding, a step of attaching a conductive adhesive to the terminal electrode formed on the top of the uppermost bump or the other component, and A method of connecting terminals of an electronic component, comprising a step of connecting electronic components between the terminal electrode formed on the one electronic component and the terminal electrode formed on the other electronic component via an adhesive.
ヤボンディングによりバンプを所定段形成する工程を有
する請求項1記載の電子部品の端子接続方法。2. The method for connecting terminals to an electronic component according to claim 1, further comprising the step of forming bumps at a predetermined stage by wire bonding on the formed laminated bumps.
基板と、内面に他の電子部品と端子電極をもつ第2の基
板とを対向して一体配置した電子機器であって、 前記第1の基板または前記第2の基板の何れか一方に形
成された端子電極上に複数のバンプが積層されて形成さ
れた積層構造のバンプ電極と、 前記第1の基板または前記第2の基板の何れか他方に端
子電極を備え、 前記一方の端子電極に形成された積層構造のバンプ電極
の頂部または他方の端子電極に付着させた導電性接着剤
によって他方の端子電極を積層構造バンプ電極に接続し
たことを特徴とする電子機器。3. An electronic device in which a first substrate having an electronic component and a terminal electrode on an inner surface thereof and a second substrate having an other electronic component and a terminal electrode on an inner surface thereof are integrally disposed so as to face each other, A bump electrode having a laminated structure in which a plurality of bumps are laminated on a terminal electrode formed on either the first substrate or the second substrate; and the first substrate or the second substrate A terminal electrode on the other of the two terminal electrodes, the other terminal electrode to the laminated structure bump electrode by a conductive adhesive adhered to the top of the bump electrode of the laminated structure formed on the one terminal electrode or the other terminal electrode An electronic device characterized by being connected.
子基板と、内面に発光素子と端子電極をもつ発光素子基
板とを対向して一体配置した原稿読み取り装置におい
て、 前記受光素子基板または前記発光素子基板の何れか一方
に形成された端子電極上に複数のバンプが積層されて形
成された積層構造のバンプ電極と、 前記受光素子基板または前記発光素子基板の何れか他方
に端子電極を備え、 前記一方の端子電極に形成された積層構造のバンプ電極
の頂部または他方の端子電極に付着させた導電性接着剤
によって他方の端子電極を積層構造バンプ電極に接続す
るとともに、 前記受光素子基板と前記発光素子基板との間にギャップ
形成用の透明スペーサを設けたことを特徴とする原稿読
み取り装置。4. A document reading apparatus in which a light-receiving element substrate having a light-receiving element and a terminal electrode on its inner surface and a light-emitting element substrate having a light-emitting element and a terminal electrode on its inner surface are integrally arranged facing each other, wherein the light-receiving element substrate or the A bump electrode having a laminated structure formed by laminating a plurality of bumps on a terminal electrode formed on one of the light emitting element substrates, and a terminal electrode on the other of the light receiving element substrate or the light emitting element substrate. , While connecting the other terminal electrode to the laminated structure bump electrode by a conductive adhesive attached to the top or the other terminal electrode of the laminated structure bump electrode formed on the one terminal electrode, and the light receiving element substrate An original reading apparatus, wherein a transparent spacer for forming a gap is provided between the light emitting element substrate and the light emitting element substrate.
子電極に熱圧着し、ワイヤをクランプした状態でキャピ
ラリツールを引き上げワイヤを切断することにより形成
した凸状のバンプを、何層にも積層した事を特徴とする
積層状金属ワイヤバンプ。5. A plurality of layers of convex bumps formed by thermocompression bonding a wire ball formed by electric discharge to a terminal electrode, pulling up a capillary tool with the wire clamped, and cutting the wire. A laminated metal wire bump characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5088244A JPH06302645A (en) | 1993-04-15 | 1993-04-15 | Terminal connection method of electronic components, electronic equipment connected according to the connection method and terminal connection bump therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5088244A JPH06302645A (en) | 1993-04-15 | 1993-04-15 | Terminal connection method of electronic components, electronic equipment connected according to the connection method and terminal connection bump therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06302645A true JPH06302645A (en) | 1994-10-28 |
Family
ID=13937448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5088244A Pending JPH06302645A (en) | 1993-04-15 | 1993-04-15 | Terminal connection method of electronic components, electronic equipment connected according to the connection method and terminal connection bump therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06302645A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264540A (en) * | 1995-03-22 | 1996-10-11 | Nec Corp | Bump structure, method for forming bump and capillary being employed therein |
WO1997048131A1 (en) * | 1996-06-10 | 1997-12-18 | Matsushita Electric Industrial Co., Ltd. | Electronic component structure |
WO2001026155A1 (en) * | 1999-10-01 | 2001-04-12 | Seiko Epson Corporation | Semiconductor device, method and device for producing the same, circuit board, and electronic equipment |
DE102004031920B4 (en) * | 2003-06-27 | 2005-11-17 | Samsung Electronics Co., Ltd., Suwon | Multi-chip bag and manufacturing process |
US7049217B2 (en) | 2003-10-28 | 2006-05-23 | Fujitsu Limited | Method of forming multi-piled bump |
JP2017069401A (en) * | 2015-09-30 | 2017-04-06 | 日亜化学工業株式会社 | Substrate and light-emitting device, and method of manufacturing light-emitting device |
US20220001475A1 (en) * | 2018-11-06 | 2022-01-06 | Mbda France | Method for connection by brazing enabling improved fatigue resistance of brazed joints |
-
1993
- 1993-04-15 JP JP5088244A patent/JPH06302645A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264540A (en) * | 1995-03-22 | 1996-10-11 | Nec Corp | Bump structure, method for forming bump and capillary being employed therein |
WO1997048131A1 (en) * | 1996-06-10 | 1997-12-18 | Matsushita Electric Industrial Co., Ltd. | Electronic component structure |
EP0844656A4 (en) * | 1996-06-10 | 2000-03-29 | Matsushita Electric Ind Co Ltd | Electronic component structure |
WO2001026155A1 (en) * | 1999-10-01 | 2001-04-12 | Seiko Epson Corporation | Semiconductor device, method and device for producing the same, circuit board, and electronic equipment |
US6489687B1 (en) | 1999-10-01 | 2002-12-03 | Seiko Epson Corporation | Semiconductor device and method of manufacturing the same, manufacturing device, circuit board, and electronic equipment |
DE102004031920B4 (en) * | 2003-06-27 | 2005-11-17 | Samsung Electronics Co., Ltd., Suwon | Multi-chip bag and manufacturing process |
US7049217B2 (en) | 2003-10-28 | 2006-05-23 | Fujitsu Limited | Method of forming multi-piled bump |
JP2017069401A (en) * | 2015-09-30 | 2017-04-06 | 日亜化学工業株式会社 | Substrate and light-emitting device, and method of manufacturing light-emitting device |
US20220001475A1 (en) * | 2018-11-06 | 2022-01-06 | Mbda France | Method for connection by brazing enabling improved fatigue resistance of brazed joints |
US12070812B2 (en) * | 2018-11-06 | 2024-08-27 | Mbda France | Method for connection by brazing enabling improved fatigue resistance of brazed joints |
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