JPH06275433A - Magnetic element and manufacture thereof - Google Patents

Abstract

PURPOSE:To obtain a magnetic field detecting element which is suitable for high-density recording and reproduction by forming extremely thin magnetic wires at specific intervals and by placing non-magnetic layers between the magnetic wires. CONSTITUTION:Magnetic wires 2 made of Co, Fe, Ni and an alloy of these are formed in very small dimensions, 0.5-100nm wide (d), 1-100nm thick (t) and 1-10,000nm long (1). The magnetic wire 2 are located in a plane with non- magnetic layers 3 made of Cu, V, Ru and Cr put between. The width D of the non-magnetic layer 3 is so set at 0.5-100nm as to generate antiferromagnetic bonding between the magnetic fine lines and the non-magnetic layers. By this method, a magnetic field detecting element can be obtained which is very small in size but which is very much suitable for high-density recording and reproduction and has such a characteristic that an electric resistance may change effectively to an outside magnetic field. With this element, a high-density magnetic reproducing system and a very small magnetism observation equipment can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic element, particularly an element capable of detecting an external magnetic field due to a magnetoresistive effect, and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, reproduction in magnetic recording is performed by detecting a leakage magnetic flux from a medium by a magnetic head. Further, in magneto-optical recording, reproduction is performed by detecting a change in the deflection component using laser light.

In all of these recording methods, in order to increase the recording density in recent years, the recording density is improved by reducing the track pitch and shortening the recording wavelength. From μm to sub μm,
The recording wavelength has also reached the sub-μm range. It is known that the magnetic domain, which is the recording unit, exists stably even at several tens of nm if the material system is appropriately selected. Therefore, whether or not reproduction from a minute area larger than the current one is possible depends on the reproduction. It depends largely on the method, the performance of the device to be constructed, and its size.

However, it is very difficult for the above-mentioned prior art to cope with reproduction of high-density recording, which is expected to be higher than the present, in the future. Because, in the conventional magnetic head for magnetic recording, the track density cannot be remarkably improved more than the above due to the restriction due to the size and the reduction of the reproducing strength. It is well known that even in magneto-optical recording, sub-μm or less is difficult due to the diffraction limit of light as long as the existing optical system is used. The same is true when detecting magnetism or observing magnetic domains in a field different from the information recording / reproducing system.
For sizes below m, they become difficult.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to provide a magnetic element capable of sufficiently dealing with high density recording and reproduction of sub-μm or less (particularly nm scale) and magnetic field detection, and manufacturing thereof. To provide a method.

[0006]

That is, the present invention has a width of 0.5.
A magnetic element in which a plurality of magnetic fine wires having a thickness of ˜100 nm, a thickness of 1 to 100 nm, and a length of 1 to 10,000 nm are provided substantially parallel to each other at intervals of 0.5 to 100 nm through a nonmagnetic layer. .

In the magnetic element of the present invention, each magnetic wire has the above-mentioned ultrafine size, and the magnetic wires are provided at a specific interval (0.5 to 100 nm), and a non-magnetic layer is interposed within the interval. Therefore, a magnetic fine wire of sub-μm or less, especially a nanometer scale size can sufficiently cope with extremely minute high-density recording and reproduction, and extremely effectively change the electric resistance with respect to an external magnetic field. It can be a magnetic field detection element having characteristics.

Therefore, since the magnetic element of the present invention is an extremely minute detection element, it is possible to realize a high-density magnetic reproducing system and an extremely minute magnetic observation apparatus.

In the magnetic element of the present invention, cobalt,
The magnetic fine wire is formed of a material containing at least one selected from the group consisting of nickel and iron, and the nonmagnetic layer is formed of a material containing at least one selected from the group consisting of copper, vanadium, ruthenium and chromium. Can be formed. Here, the above-mentioned "comprising" also means that the above-mentioned elements are used alone (occupying 100%), and of course also used in combination with other elements or in compounds.

Further, the magnetic element of the present invention, as a magnetic field detecting element, causes a current to flow in the length direction of the magnetic thin wire, monitors its electric resistance, and changes its resistance by an external magnetic field (so-called magnetic resistance change). It is desirable to be configured to detect magnetic fields. That is, since the electric resistance of the magnetic element of the present invention changes efficiently in response to the change of the external magnetic field, the change of the magnetic field in the minute region can be detected by monitoring it.

In the magnetic element of the present invention, in particular, the fine magnetic wires and / or the non-magnetic layer are formed by fine processing on the atomic order by a probe of a scanning tunneling microscope (hereinafter sometimes referred to as STM). Preferably formed.

That is, there is a step of forming a magnetic fine wire and / or a non-magnetic layer of a predetermined pattern by performing fine processing on the atomic order using a probe of a scanning tunneling microscope (STM). Needle and the magnetic layer side of the magnetic thin wire and /
Alternatively, the distance from the nonmagnetic layer side is 0.1 to several nm, and 1 is provided between the probe and the magnetic layer side and / or the nonmagnetic layer side.
The fine treatment can be performed by applying a voltage of -20 V and by field evaporation. Here, the above “magnetic layer side”,
The "non-magnetic layer side" refers to the magnetic layer or the non-magnetic layer itself, and may also refer to a support provided with magnetic fine wires or a non-magnetic layer.

Alternatively, the tip of the STM probe may be inserted into the magnetic layer side and / or the non-magnetic layer side of the magnetic wire to perform the fine processing. Here, the “magnetic layer side” and the “non-magnetic layer side” refer to the magnetic thin wire and the layer serving as the non-magnetic layer.

Such a scanning tunneling microscope (STM)
By the fine processing using the probe, it is possible to highly accurately manufacture the finely processed magnetic element pattern capable of sufficiently realizing the high-density recording, reproduction, and magnetic field detection described above.

[0015]

EXAMPLES Examples of the present invention will be described below.

FIG. 1 shows a magnetic element 1 according to the first embodiment of the present invention. According to this magnetic element 1, a plurality of magnetic fine wires 2 made of a magnetic element having a width d, a thickness (height) t, and a length 1 are substantially parallel to each other and are nonmagnetic of a nonmagnetic element having a width (spacing) D. The layers 3 are provided on the substrate 4 so as to be substantially flush with each other.

In the magnetic element 1, the number of the magnetic fine wires 2 is preferably 2 to 10,000, and the above-mentioned dimensions are all sub-μm or less (especially nanometer scale) and ultrafine. Has become. Each lower limit indicates a pattern formation limit. Width d = 0.5 to 100 nm (eg 1 to 3 nm) Thickness (height) t = 1 to 100 nm (eg 10 to 30 nm) Length l = 1 to 10,000 nm (eg 1 to 500 nm) Width (spacing) D = 0.5 ~ 100nm (eg 1-50nm)

The magnetic elements forming the magnetic wire 2 are Co and F.
e, Ni and their compounds (alloys),
The non-magnetic element forming the non-magnetic layer 3 is Cu, V, R.
u and Cr are preferable, and Cu is particularly preferable.

At present, in a magnetic artificial lattice thin film, a magnetic alloy layer composed of Co and Co, Ni, Fe and Cu, V, R
It has been reported that in an artificial lattice film in which non-magnetic layers made of non-magnetic elements such as u and Cr are alternately laminated on top and bottom, the electric resistance change with respect to an external magnetic field, that is, the magnetic resistance change is large (PHYSICAL REVIEW LETTERS). , Volume 66, No.16,
22 April, 1991). In this document, for example, when the Co layer is fixed and the thickness of the Cu layer is changed, the magnetoresistive ratio thereof changes periodically, and a remarkably large value at about 10Å and 20Å (for example, ΔR / R is 40 to 60 at low temperature). %, And 20-40% at room temperature) (FIG. 3 of the same document).

The reason why such a remarkable change in the magnetoresistive ratio (ΔR / R) occurs is that the magnetic moment of each Co layer is strong under the condition that the external magnetic field is zero under the condition of the Cu layer exhibiting a huge magnetoresistive change. It is magnetically coupled, and it is understood that the magnetic resistance changes to antiferromagnetic coupling as an external magnetic field is applied, and the change in magnetoresistance at that time is large. That is, antiferromagnetic coupling between magnetic layers is important for causing a change in magnetic resistance.

Based on the above facts, the present inventor selects an appropriate combination of the respective elements (particularly it is preferable to use Cu as the non-magnetic element), and controls the layer thickness condition to control the antiferromagnetic property. The magnetic element 1 shown in FIG. 1 was devised in consideration of the importance of causing the coupling.

That is, the magnetic fine wires 2 made of Co or the like are finely provided in the above-mentioned size and arranged in a plane (planar type) with the non-magnetic layer 3 made of Cu or the like having a predetermined width D interposed therebetween, and the antiferromagnetism described above is provided. The width D of the non-magnetic layer 3 is in a specific range so as to cause coupling.
(0.5 to 100 nm, especially 1 to 50 nm).

Therefore, in the magnetic element 1 according to the present embodiment, a plurality of magnetic thin wires 2 are provided as magnetic layers, and the non-magnetic layer 3 is provided in a predetermined width between the magnetic thin wires, which is the same as the artificial lattice film described above. In the state, a similar magnetic cooperation phenomenon occurs between the magnetic elements via the non-magnetic element. That is, for example, if the magnetic wires 2 are made of Co and the space between them is filled with a Cu layer 3 and the width D of the Cu layer 3 is controlled, a state in which the magnetic moments of the respective wires 2 are antiferromagnetically coupled is created as shown in FIG. It is possible. For example, the width D of the nonmagnetic layer 3 can be 1 nm or 2 nm.

As described above, the magnetic element 1 exhibits a magnetic moment coupling state (antiferromagnetic coupling). Therefore, similarly to the above, a large magnetic resistance change (ΔR / R is several tens% or more with respect to a magnetic field). ) Can be obtained. In this magnetic element, the number of the magnetic fine wires 2 is required to be at least two, but it may be increased in order to flow the current to some extent. However, in consideration of the fact that the entire size is sub-μm or less, which is a feature of this element, 10,000 or less are preferable.

2 and 3 show a configuration in which the above-mentioned magnetic element 1 is used as a sensor (magnetic field detecting element) 31. That is, electrodes 5 and 6 made of Au, Cu or the like are provided on both ends of the magnetic thin wire 2 by sputtering or the like, and are connected to a power source 7 to flow a current. Then, the electric resistance is monitored by the ammeter 8. The change in the magnetic field can be detected from the resistance change due to the external magnetic field.

As described above, the magnetic element 1 according to the present invention is excellent in magnetic field sensitivity and constitutes a very small magnetic field detecting element, and therefore the following effects can be obtained. 1. Since the entire device can be made smaller than in the conventional case, the magnetic field from the region of sub μm or less can be detected. 2. Since the magnetic field sensitivity is good, even a magnetic field from an extremely small area can be efficiently detected.

FIG. 4 shows a modification of FIG. 2, in which the electrodes 5 and 6 at both ends of the magnetic element are attached from the side end surface of the magnetic wire 2 to the upper surface. This makes it easy to form electrodes (patterning by sputtering → etching).

FIG. 5 shows a modification of FIG. 1, in which a plurality of nonmagnetic layers 3 are connected and integrated at both ends.
Also by this, the resistance change due to the external magnetic field can be detected as described above with reference to FIG.
Since only the non-magnetic layer 3 exists at both ends of the element, it is considered that the adherence of the electrodes 5 and 6 is also improved.

The structure in which the layers are connected at both ends as described above can be adopted for the magnetic wire 2 instead of the above structure. In this case, the magnetic wires 2 may be connected at both ends in the same manner as above.

Next, with reference to FIG. 6, a principle will be described in principle of a method of ultra-finely processing the magnetic wire 2 in each of the above-mentioned magnetic elements (or magnetic field detecting elements), particularly to a size of sub-μm or less. Here, the magnetic layer 12 is a thin film processed into the magnetic wire 2.

FIG. 6A shows the magnetic layer 12 formed by field evaporation.
An example of forming a fine recess (eg, a groove) is shown in FIG. STM
The tip of the probe 10 is brought closer to the surface of the thin film 12 by a distance of 0.1 to several nm so that a tunnel current flows, then the position of the probe 10 is fixed, and between the probe 10 and the thin film 12. Tens of msec
A pulse voltage 44 of 1 to 20 V is applied with a time width of several seconds. By applying a voltage at such a minute distance, an extremely large electric field of 10 ⁷ to 10 ⁸ V / cm is applied between the thin film 12 and the probe 10, which is called atomic evaporation from the thin film 12. Cause a release phenomenon.

As a result, a minute portion of the thin film sublimes in the atomic order region, and a minute hole 13 is formed on the surface. When the above-mentioned electric field evaporation is performed while scanning the probe in a predetermined direction,
A groove having a minute width is formed in a predetermined direction. This groove can serve as a gap between the magnetic wires 2-2 or a region where the non-magnetic layer 3 is formed.

In FIG. 6B, the atoms forming the probe 10 are field-evaporated in the same manner as in FIG. 6A, and these are deposited on the thin film 11 to form the minute projections 12 which can be magnetic fine wires. It shows how to form. Whether the groove 13 is formed as shown in FIG. 6A or the convex portion 12 is formed as shown in FIG. 6B depends on the material and processing conditions of the thin film probe.

In FIG. 6 (c), the STM chamber is once brought to an ultra-vacuum state, and then the reaction gas of interest is introduced so as to have a predetermined degree of vacuum, and thereafter, the same as in FIG. 6 (b). By this operation, the atoms 12 in the reaction gas component are deposited on the thin film 11 to form the protrusions 12.

FIG. 6 (d) shows that the pulse voltage is not applied between the probe 10 and the thin film 12 but by the electric action described above.
A method of piercing the tip of the probe 10 into the thin film 12 and mechanically forming the hole or groove 13 without applying 44) is shown. Probe 10
When the probe 10 is scanned in the state of being pierced into the thin film 12 as indicated by the arrow, the groove 13 is formed in the direction of the arrow. That is, FIG. 6D shows a procedure for forming a recess (groove) by a cutting mechanism.

FIG. 7 is a schematic diagram showing a system of an apparatus that can be used for the above-mentioned fine processing using STM.

The substrate 4 on which the magnetic thin film 12 is formed is horizontally placed on the sample stage 21. The probe 10 fixed to the piezo element 23 is vertically positioned so as to face the surface of the thin film 12. The sample stage 21 is movable in horizontal X and Y directions which are orthogonal to each other, and the laser length measuring machine 22 is used to position the thin film 12 in the X and Y directions, respectively.
The measurement results of X and 22Y are input to the microcomputer 29, and the microcomputer 29 controls and drives a driving means (not shown).

The precise positioning of the probe 10 with respect to the thin film 12 is performed by the substantially cylindrical piezoelectric element 23 as follows.

The X-direction inner and outer peripheral ends of the piezo element 23 are connected to the X-direction scanning circuit 25, and the Y-direction inner and outer peripheral ends thereof are connected to the Y-direction scanning circuit 26. The upper and lower ends (in the vertical direction) are connected to the Z-direction drive / servo circuit 27. Two pairs of connecting ends of the piezo element 23 to each circuit in the X direction, Y direction, and Z direction are provided at symmetrical positions, but only one set is shown in FIG. 3 and the other one set is not shown. I am doing it.

The X-direction scanning circuit 25, the Y-direction scanning circuit 26 and the Z-direction driving / servo circuit 27 are connected to a microcomputer 29. The microcomputer 29 uses an X-direction scanning circuit 25 and a Y-direction scanning circuit 2 via a feedback circuit 28.
6. Connected to Z direction drive / servo circuit 27. Probe 10
A tunnel current power supply 24 is connected to the thin film 11 and the tunnel current power supply 24 is connected to a microcomputer 29.

A cathode ray tube (CRT) 30A and a printer 30B are connected to the microcomputer 29, and the STM
The surface state of the thin film 11 can be observed and recorded. As described above, the surface condition is S
It can be observed by TM with a resolution of atomic order of nm. First, while monitoring the CRT 30A, a voltage is applied to the piezo element 23 from the X-direction scanning circuit 25 and the Y-direction scanning circuit 26 to the piezo element 23 by the operation of the microcomputer 29, and the piezo element 23 in the X direction and Y direction. By controlling the dimension in the direction, the probe 10 is accurately positioned right above the desired position on the thin film 12.

Taking the fine processing shown in FIG. 6A as an example, the procedure after the above is as follows.

The position of the probe 10 in the X and Y directions is stopped at a predetermined point, and then the Z direction of the piezo element 23 is changed by applying a voltage by the Z direction driving / servo circuit 27.
The tip of the probe 10 is brought close to the thin film 12 at a distance of 0.1 to several nm so that a tunnel current flows. Next, the feedback circuit portion connected to the Z-direction drive / servo circuit 27 in the feedback circuit 28 is turned off to fix the position of the tip of the probe 10.

Next, from the pulse power source 44 connected between the probe 10 and the thin film 12, between the probe 10 and the thin film 12, several tens of msec.
A pulse voltage of 1 to 20 V is applied with a time width of several seconds. At this time, the Z-direction feedback circuit 28 is turned off.
Therefore, the distance between the tip of the probe and the surface of the thin film does not change during application of the pulse voltage. Then, as described above, a large electric field is generated between the tip of the probe and the surface of the thin film, and the electric field evaporation caused by this causes a hole (hole 13 in FIG. 6A) to be formed in an extremely narrow region of the thin film 12. Form.

As described above, the distance between the probe 10 and the surface of the thin film 12 is always kept constant, and it is confirmed by electrically turning off the feedback in the Z direction that the distance is kept constant. By doing so, a large electric field for a desired time can be surely applied only to the tip of the probe, or only to a very limited region of the thin film surface located at the tip of the probe. For the above reasons, it is desirable to turn off feedback in the Z direction when applying a pulse. However, under certain conditions,
The tunnel current may flow with the feedback in the Z direction turned off, but it is not necessary to flow it.

Immediately after the application of the pulse voltage, the piezoelectric element 23
It recovers the feedback in the Z direction and enables the probe to be controlled by the tunnel current again. next,
The piezo element in the X and Y directions is controlled to move to a place where further fine processing is desired, and pulses are applied in the same manner as described above. By sequentially performing this, a linear groove is formed into a thin film.
Form to 12. All of these are computer controllable and thus can be manipulated at any interval or in any shape. For example, when it is desired to perform linear processing, the interval may be made very small.

After the planar processing is completed, the film is moved to the film forming section to form a non-magnetic film which will be the above-mentioned non-magnetic layer 3. Since this is performed under a high vacuum, an element that easily oxidizes can be handled without any concern.

The holes 13 can be continuously formed to form linear grooves in a desired direction. One way is
One or both of the X-direction scanning circuit 25 and the Y-direction scanning circuit 26 is driven to repeat the above operation while scanning the probe 10 in the desired direction. That is, the Z-direction feedback of the piezo element is immediately recovered after the pulse voltage is applied, and the piezo element can be controlled by the tunnel current again. Then, the piezo element is controlled in the X direction and the Y direction to move the probe by a minute distance, and in the same manner as described above, feedback in the Z direction is cut off and pulse application is performed.

In another method, the feedback in the Z direction of the piezo element is not turned off, and the piezo element is controlled in the X direction and / or the Y direction while successively applying the pulse voltage with a minute pulse width. The needle is moved to form the groove in the desired direction.

The formation of the holes and the formation of the linear grooves can be performed by monitoring the surface state of the thin film with the CRT 30A while passing a tunnel current. By doing this,
It is possible to form a plurality of holes and linear grooves in an accurate pattern. In addition, the fine processing apparatus of FIG.
It can be used as M.

As shown in FIG. 6 (b), when the atoms are field-evaporated from the probe and deposited on the thin film 11 to form the projection 12, the same process as the above-mentioned hole formation is performed.

In order to deposit the atoms 15 in this gas component from the reaction gas on the thin film 11 to form the projection as shown in FIG. The gas is introduced until the desired vacuum degree is reached, and the process is carried out in the gas.
The basic principle is the same as the method described in the field evaporation above,
This can be done by applying a pulsed voltage between the probe and the substrate.

When the probe 10 is pierced into the thin film 12 to form the groove 13 or the hole as shown in FIG. 6D, the piezo element is controlled in the Z direction to bring the probe 10 closer to the thin film 12, and The depth at which the tip is embedded can be easily and arbitrarily set by controlling the voltage applied to the piezo element. In the case of a hole, the probe 10 may be raised after its formation, and in the case of a linear groove, the piezo element can be controlled in the X and / or Y direction with the probe 10 embedded. To move and process.

As described above, the planar processing can be performed in an arbitrary pattern such as a dot shape or a line shape, and the size thereof is nm.
It is possible to freely manufacture from the atomic order to the μm order.

Next, a method of manufacturing the magnetic element of, for example, FIG. 1 according to the present invention using the above-described fine processing apparatus will be described with reference to FIGS.

First, as shown in FIG. 8, a thin film 12 of, for example, cobalt is sputtered on a substrate (for example, a glass or plastic substrate) 4 by DC sputtering (input power: 0.2 to 1 A, 300).
According to V), the thickness t = 10 to 30 nm and the length l = 10 to 300 nm are formed.

Next, as shown in FIG. 9, the cobalt thin film 12
Then, a plurality of grooves 13 having a width D = 1 to 50 nm are formed in parallel with each other by the field evaporation of FIG. 6A (or cutting by the probe of FIG. 6D) by the above-mentioned STM. By this processing, the magnetic fine wire 2 is formed with a width d = 1 to 3 nm.

Then, as shown in FIG. 10, a thin film 33 of copper, for example, is subjected to DC sputtering (input power: 0.2 to 1 A,
300V or high frequency sputter (input power: 200-50)
0 W). By this film formation, the groove 13 of FIG. 9 is filled with copper, and the copper film 33 is deposited on the entire surface.

Next, the copper film 33 is uniformly etched (etched back) so that the copper nonmagnetic layer 3 is embedded only in the groove 13 between the magnetic wires 2 as shown in FIG. The magnetic element 1 is manufactured.

If the copper film 33 is used as the non-magnetic layer 3, the above-mentioned field evaporation shown in FIG. 6A is applied to the entire surface other than etching, or copper reverse sputtering (polarity of electrodes during sputtering). Reverse, and the copper film is peeled off from the surface). Further, as a method for forming the copper film 33 and the cobalt film 12, other than sputtering, vapor deposition, MBE, CVD
(Chemical vapor deposition) Other known thin film forming techniques can be used.

Although the embodiments of the present invention have been described above, the following various modifications can be added to the above embodiments based on the technical idea of the present invention.

For example, the fine processing by STM described above can be performed by appropriately adopting or combining the methods shown in FIGS. 6 (a) to 6 (d).

The STM fine processing was performed on the magnetic wire 2 in the above-described embodiment, but it can be performed on the non-magnetic layer 3 or on both layers 2 and 3. You can also do it.

For example, the copper film 33 may be uniformly field evaporated in the state of FIG. 10, or only the copper on the magnetic wire 2 may be field evaporated, or instead of the magnetic thin film 12 of FIG. Even if 33 is formed and this is field-evaporated into linear grooves by STM,
The nonmagnetic layer 3 shown in FIG. 11 can be processed. In this case, the magnetic wire 2 may be formed by fine processing by STM, or may be formed by the above-mentioned etch back or reverse sputtering.

Further, although the fine processing shown in FIG. 6 is performed by using one probe 10, a plurality of probes 10 can be provided as shown in FIG. That is, a plurality of probes 10 are provided in one row (in the X direction in this example) with their positions fixed,
By performing processing while simultaneously scanning each probe 10 in the Y direction, it is possible to simultaneously form a plurality of parallel linear grooves 13 and a plurality of magnetic fine wires 2.
This can also be applied to other steps such as FIG.

Further, the material for forming the film and the method for forming the film may be variously changed according to the purpose. Further, the processing pattern may be various.

[0067]

As described above, according to the present invention, each magnetic wire has the above-mentioned ultrafine size, and the magnetic wires are provided with a specific interval (0.5 to 100 nm) and the nonmagnetic property is provided within the interval. Since the layers are interposed, it is possible to provide a magnetic fine wire that is submicron or less, especially in the size of nanometer scale, which can sufficiently cope with high-density recording and reproduction, and which is extremely effective against an external magnetic field. It can be a magnetic field detection element having a characteristic of changing resistance.

Further, by fine processing using the probe of the scanning tunneling microscope (STM), it is possible to manufacture with high accuracy a finely processed magnetic element pattern capable of sufficiently realizing high density recording, reproduction and magnetic field detection.

[Brief description of drawings]

FIG. 1 is a schematic perspective view of a magnetic element according to a first embodiment of the present invention.

FIG. 2 is a schematic perspective view when a magnetic field detection element using the magnetic element is used as an actual sensor.

FIG. 3 is a plan view of the magnetic field detecting element.

FIG. 4 is a schematic perspective view of a magnetic field detecting element according to another embodiment of the present invention.

FIG. 5 is a schematic perspective view of a magnetic field detecting element according to still another embodiment of the present invention.

6A to 6C are schematic cross-sectional views for explaining various examples of the principle of fine processing using a probe of a scanning tunneling microscope (STM).

FIG. 7 is a schematic view of a microfabrication system of the same STM.

FIG. 8 is a schematic perspective view showing one step of a method of manufacturing a magnetic element according to the first embodiment of the present invention.

FIG. 9 is a schematic perspective view showing another step in the manufacturing method.

FIG. 10 is a schematic perspective view showing another process step of the same manufacturing method.

FIG. 11 is a schematic perspective view showing still another process step of the same manufacturing method.

FIG. 12 is a schematic perspective view showing another example of fine processing using an STM probe.

[Explanation of symbols]

 1 ... Magnetic element 2 ... Magnetic thin wire 3 ... Non-magnetic layer 4 ... Substrate 5, 6 ... Electrode 7 ... Power supply 8 ... Ammeter (monitor) 10 ... Search Needle 12 ... Magnetic film 13 ... Groove 23 ... Piezo element 31 ... Magnetic field detection element (sensor) 33 ... Non-magnetic film 44 ... Pulse power supply

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location H01J 37/30 Z 9172-5E H01L 43/08 Z 9274-4M 43/12 9274-4M

Claims (6)

[Claims] 1. A plurality of magnetic fine wires having a width of 0.5 to 100 nm, a thickness of 1 to 100 nm and a length of 1 to 10,000 nm are provided substantially parallel to each other with an interval of 0.5 to 100 nm via a non-magnetic layer. Magnetic element. 2. A magnetic fine wire is formed of a material containing at least one selected from the group consisting of cobalt, nickel and iron, and a material containing at least one selected from the group consisting of copper, vanadium, ruthenium and chromium. The magnetic element according to claim 1, wherein the non-magnetic layer is formed by. 3. A structure in which an electric current is caused to flow in the lengthwise direction of a plurality of magnetic fine wires provided in substantially the same plane, the electric resistance thereof is monitored, and the external magnetic field is detected by a resistance change caused by the external magnetic field. The magnetic element according to claim 1 or 2. 4. The magnetic element according to claim 1, wherein the fine magnetic wires and / or the non-magnetic layer are formed by fine processing on the atomic order with a probe of a scanning tunneling microscope. 5. The scanning tunneling microscope has a step of forming a fine magnetic wire and / or a non-magnetic layer having a predetermined pattern by performing fine processing on the atomic order using a probe of the scanning tunneling microscope. Needle and the magnetic layer side of the magnetic thin wire and /
Alternatively, the distance from the nonmagnetic layer side is 0.1 to several nm, and 1 is provided between the probe and the magnetic layer side and / or the nonmagnetic layer side.
The method for producing a magnetic element according to claim 1, wherein the fine treatment is performed by applying a voltage of ˜20 V and performing field evaporation. 6. A method for performing fine processing in atomic order using a probe of a scanning tunneling microscope to form a magnetic fine wire and / or a non-magnetic layer having a predetermined pattern, the probe of the scanning tunneling microscope. The method for manufacturing a magnetic element according to claim 1, wherein the fine treatment is performed by causing a tip of a needle to enter the magnetic layer side and / or the non-magnetic layer side of the magnetic wire.