JPH06268473A - High frequency integrated circuit device - Google Patents

Abstract

PURPOSE:To enable packaging by resin sealing by jointing a glass substrate provided with a space on the upper part of a dielectric thin film for which a surface acoustic wave element is manufactured and covering it. CONSTITUTION:The surface acoustic wave element is provided in the dielectric thin film 2 formed on a silicon substrate 1, a high frequency amplifier element is provided in a semiconductor thin film 3 formed on the substrate 1 similarly and the glass substrate 4 is jointed on the substrate 1 so as to make the space 6 on the thin film 2. In such a manner, the surface acoustic wave element is physically and chemically protected by the space 6 provided by the substrate 4 jointed to the substrate 1 in a state where the space is formed on the upper part of the surface acoustic wave element. Since the resin of a package does not cover the surface of the thin film 2 where the surface acoustic wave element is formed even when it is packaged by the resin sealing, the function at the surface acoustic wave element is not hindered.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency integrated circuit device used in a high frequency circuit.

[0002]

2. Description of the Related Art Mobile phones, MCA (Multi Channel Acces
s) With the spread of mobile radios used in the high frequency range of several hundred MHz to several GHz such as radio, miniaturization of radio equipment,
There is a demand for weight reduction, and inevitably, there is a demand for reduction in size and weight of components used in these wireless devices. In particular, miniaturization of high-frequency amplifier circuits and filters that handle signals in the high-frequency range is not said to be smaller and more quantified than LSIs used for normal signal processing. There is a strong demand for downsizing and weight reduction of parts used in.

In order to reduce the size and weight of high frequency components, attention has been paid to a surface acoustic wave device using a dielectric thin film. This is because it is possible to manufacture a filter element that is smaller and lighter than the coaxial filter and the helical filter that have been used so far. Also, instead of using this surface acoustic wave element as a single filter,
A high frequency integrated circuit is disclosed in which a surface acoustic wave filter is formed by forming a dielectric thin film of aluminum nitride or the like on a semiconductor substrate having a high frequency amplifier circuit or the like formed in a part thereof (for example, Tsubouchi K; IEEE Trans. Sonics.Ultraso
n. Vol.32, No.5, P634 (1985)).

Such an integrated circuit device is packaged and provided in order to be actually provided as a component. Ordinary LSI and other elements are packaged by resin encapsulation, can body or ceramic encapsulation, and provided as parts. In particular, in recent years, they are easy to form, mass-produce, and easy to handle, and the entire package. In order to achieve miniaturization as described above, a resin-sealed or ceramic-sealed package that can be provided as a package smaller than a can body is often used.

Since a surface acoustic wave device requires a space for forming an elastic wave on the surface of the device, it serves as a housing for housing the device, and is a packaged product in which a space can be formed inside and a can body is sealed. The same applies to an integrated circuit in which the surface acoustic wave element and other elements are integrated, and there must be a space on the surface of the surface acoustic wave element portion. Therefore, when it is provided as a component, it must be a can-sealed component that is a larger housing than an LSI component that is usually resin-sealed or ceramic-sealed. Waveform elements and other semiconductor elements are formed on the same substrate, and the merit of miniaturization by integrating them as elements is lost when they are packaged as actual parts, which cannot contribute to miniaturization. there were.

[0006]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a high frequency integrated circuit device in which a high frequency amplification device and a surface acoustic wave device are manufactured on one silicon substrate, and the size after packaging is also reduced. It is to provide a high-frequency integrated circuit element that can be resin-sealed.

[0007]

Means for Solving the Problems The above-mentioned various objects are to provide a dielectric thin film on which a surface acoustic wave device is formed and a semiconductor thin film on which a high frequency amplifying device is formed on a silicon substrate.
A high-frequency integrated circuit device characterized in that a glass substrate having a space is bonded to at least an upper part of the dielectric thin film among the dielectric thin film and the semiconductor thin film.

[0008]

The high-frequency integrated circuit device of the present invention constructed as described above has a glass substrate in which a space is provided on the dielectric thin film on which the surface acoustic wave device formed on the silicon substrate is manufactured. , A space is formed so that a space is formed at least above the dielectric thin film, and this glass substrate is bonded to a silicon substrate so that a space is formed above the dielectric thin film by the space. Even when the packaging is performed by the method described above, a space is left on the dielectric thin film and the resin-sealed package can be performed without hindering the function of the surface acoustic wave device.

In the high frequency integrated circuit device of the present invention, an electromagnetic wave emitted from a surface acoustic wave device or a high frequency amplification device is obtained by metal-coating the inner surface of the space portion of the glass substrate for providing a space on the dielectric thin film. Is to prevent the radiation from outside.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings.

1 and 2 are views showing an example of a high frequency integrated circuit device of the present invention. 1 is a sectional view and FIG. 2 is a partially cutaway perspective view.

In the high frequency integrated circuit device of the present invention, a surface acoustic wave device is formed on the dielectric thin film 2 formed on the silicon substrate 1, and a high frequency amplifying device is also formed on the semiconductor thin film 3 formed on the silicon substrate 1. The glass substrate 4 is bonded to the silicon substrate 1 so that the space 6 is formed on the dielectric thin film 2.

As described above, the surface acoustic wave element is physically or chemically formed with the space 6 formed in the glass substrate 4 bonded to the silicon substrate 1 so that the space is formed above the surface acoustic wave element. Be protected. Therefore, even if the high-frequency integrated circuit element of the present invention is packaged by resin sealing, the resin of the package does not cover the surface of the dielectric thin film 2 on which the surface acoustic wave element is formed, and thus the function of the surface acoustic wave element. Does not interfere with.

FIG. 3 is a sectional view for explaining another embodiment of the high frequency integrated circuit device of the present invention.

In the high frequency integrated circuit device of this embodiment, a surface acoustic wave device is formed on a dielectric thin film 2 formed on a silicon substrate 1, and a semiconductor thin film 3 similarly formed on the silicon substrate 1 is subjected to high frequency amplification. An element is manufactured, and a glass substrate 4 is bonded on the silicon substrate 1 so that a space 6 is formed on the dielectric thin film 2. Further, the inner surface of the space 6 provided in the glass substrate 4 is made of metal. It is covered with the film 5.

By covering the inner surface of the space 6 with the metal film 5 as described above, the function of the surface acoustic wave element described above is ensured and the electromagnetic waves emitted by the surface acoustic wave element and the high frequency amplifying element are radiated to the outside of the element. Can be prevented. Of course, in this embodiment as well, it is possible to package by resin sealing.

In the examples of the above two examples, the dielectric thin film 2 on which the surface acoustic wave device on the silicon substrate 1 is manufactured is, for example, aluminum nitride, zinc oxide, lithium tantalate, lead zirconate titanate or the like sputtered. Method or the CVD method, and the semiconductor thin film 3 for producing the high-frequency amplification element or the like is, for example, gallium arsenide (GaAs) or the like formed by the CVD method. In addition, the anodic bonding can be used to bond the silicon substrate 1 and the glass substrate 4.

In the examples of the above two examples, the semiconductor thin film 3 was formed in order to manufacture the high frequency amplifying device on the silicon substrate 1, and the semiconductor thin film 3 was formed with the device for handling the high frequency.
As for an element handling high frequency, an element made of GaAs has a higher frequency than an element formed on a silicon substrate, especially as an amplifier circuit used in a high frequency region of several hundred MHz to several GHz. This is because it is possible to operate, which is preferable.

In the above-mentioned two examples, a space is provided above the semiconductor thin film as well as above the dielectric thin film 2 in which the surface acoustic wave device is manufactured in the illustrated case. The space above 3 is not particularly necessary,
This is only for explaining the present invention,
There may be no space on the semiconductor thin film 3. In addition, the present invention provides such a dielectric thin film 2 and a semiconductor thin film 3 as described above.
The arrangement is not limited to.

[0020]

As described above, in the high frequency integrated circuit device of the present invention, the upper part of the dielectric thin film in which the surface acoustic wave device is manufactured is covered with the glass substrate provided with the space. It is possible to perform a resin-sealed package, which was impossible with the surface acoustic wave device. Further, by coating the inner surface of the space of the glass substrate with a metal, it is possible to prevent the electromagnetic waves emitted from the surface acoustic wave element or the high frequency amplification element from being radiated to the outside even when the resin-sealed package is used.

[Brief description of drawings]

FIG. 1 is a sectional view for explaining an embodiment of a high frequency integrated circuit device of the present invention.

FIG. 2 is a perspective view for explaining an embodiment of the high frequency integrated circuit device of the present invention.

FIG. 3 is a sectional view for explaining another embodiment of the high-frequency integrated circuit device of the present invention.

[Explanation of symbols]

1 ... Silicon substrate, 2 ... Dielectric thin film, 3 ... Semiconductor thin film,
4 ... glass substrate, 5 ... metal film,
6 ... space, 20 ... resin.

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[Procedure amendment]

[Submission date] May 20, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] 0002

[Correction method] Change

[Correction content]

[0002]

2. Description of the Related Art Mobile phones, MCA (Multi Channel Acces
s) With the spread of mobile radios used in the high frequency range of several hundred MHz to several GHz such as radio, miniaturization of radio equipment,
There is a demand for weight reduction, and inevitably, there is a demand for reduction in size and weight of components used in these wireless devices. Among them, high-frequency amplifier circuit and miniaturization of the filter that handles signals of the high frequency range is different from the LSI and the like used in the normal signal processing, a small, it can not be said to have progressed light weight, such a high frequency band There is a strong demand for downsizing and weight reduction of parts used in.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] Explanation of code

[Correction method] Change

[Correction content]

[Explanation of symbols] 1 ... Silicon substrate, 2 ... Dielectric thin film, 3 ... Semiconductor thin film,
4 ... glass substrate, 5 ... metal film,
6 ... space .

Claims (2)

[Claims] 1. A dielectric thin film on which a surface acoustic wave device is formed, and a semiconductor thin film on which a high frequency amplification device is formed, on a silicon substrate, at least the dielectric thin film among the dielectric thin film and the semiconductor thin film. A high-frequency integrated circuit device characterized in that a glass substrate having a space is bonded to the upper part of the substrate. 2. The high frequency integrated circuit device according to claim 1, wherein an inner surface of the space is metal-coated.