JPH06260670A - Light confinement structure for solar cells - Google Patents
Light confinement structure for solar cellsInfo
- Publication number
- JPH06260670A JPH06260670A JP5044878A JP4487893A JPH06260670A JP H06260670 A JPH06260670 A JP H06260670A JP 5044878 A JP5044878 A JP 5044878A JP 4487893 A JP4487893 A JP 4487893A JP H06260670 A JPH06260670 A JP H06260670A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- incident
- slope
- confinement structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Guides In General And Applications Therefor (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】
【目的】 入射光を格段に効率よく基板内に閉じ込める
ことのできる太陽電池用光閉じ込め構造体を提供するこ
と。
【構成】 上記目的は、基板表面に設けた少なくとも大
小2種類の逆ピラミッド層の組合せからなることを特徴
とする太陽電池用光閉じ込め構造体とすること、特に、
大きい逆ピラミッドの一つの斜面に入射し、基板裏面で
反射して再び基板表面に達した光の主体が、隣り合う2
対の大きい逆ピラミッドの互いに接する2面で、上記入
射光入射斜面と直角方向に傾斜している斜面に入射する
構成としたことを特徴とする太陽電池用光閉じ込め構造
体とすることによって達成することができる。
(57) [Abstract] [Purpose] To provide a light confinement structure for a solar cell capable of confining incident light in a substrate significantly efficiently. The above object is to provide an optical confinement structure for a solar cell, which is characterized by comprising a combination of at least two types of inverted pyramid layers provided on the surface of a substrate, and in particular,
Light incident on one slope of a large inverted pyramid, reflected by the back surface of the substrate, and then reaching the front surface of the substrate again is adjacent to each other.
This is achieved by providing a light confinement structure for a solar cell, characterized in that two surfaces of an inverted pyramid having a large pair are in contact with each other and are incident on a slope inclined at a right angle to the incident light incidence slope. be able to.
Description
【0001】[0001]
【産業上の利用分野】本発明は太陽電池用光閉じ込め構
造体に係り、特に、入射光を格段に効率よく基板内に閉
じ込めることのできる太陽電池用光閉じ込め構造体に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light confining structure for a solar cell, and more particularly to a light confining structure for a solar cell capable of confining incident light in a substrate significantly efficiently.
【0002】[0002]
【従来の技術】太陽電池の光電変換効率を高めるために
は、太陽電池に入射した光を効率よく太陽電池内に閉じ
込めることが必要である。このためには、まず表面反射
を低く抑え、より多くの光を基板内に入射させる必要が
あるが、これを達成するために、太陽電池表面に逆ピラ
ミッド構造体を形成する方法が考えられている。このよ
うな構造体としては、これまで、図2に示すように、下
に凸の四角錐からなる同じサイズの逆ピラミッドを並べ
た構造の反射防止構造体が用いられていた。このような
構造体の開示例としては、アプライドフィジックスレタ
ー 第55巻 第13号第1363〜1365頁(1989年)(Appl.Phys.L
ett., Vol.55, No.13, 1989, pp.1363‐1365)の記載が
ある。2. Description of the Related Art In order to improve the photoelectric conversion efficiency of a solar cell, it is necessary to efficiently confine the light incident on the solar cell in the solar cell. For this purpose, it is necessary to first suppress the surface reflection and allow more light to enter the substrate, but in order to achieve this, a method of forming an inverted pyramid structure on the solar cell surface has been considered. There is. As such a structure, up to now, as shown in FIG. 2, an antireflection structure having a structure in which inverted pyramids of the same size made of a downwardly convex quadrangular pyramid are arranged is used. Examples of the disclosure of such a structure include Applied Physics Letters Vol. 55, No. 13, pp. 1363 to 1365 (1989) (Appl. Phys.
ett., Vol.55, No.13, 1989, pp.1363-1365).
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来技術の構造体においては、逆ピラミッドの一斜面に入
射した光が基板裏面で反射され、再び表面に達したとき
に、その光の多くが外部に出射してしまうため、光を効
率よく基板内に閉じ込めることができなかった。本発明
の目的は、上記従来技術の有していた課題を解決して、
入射光を格段に効率よく基板内に閉じ込めることのでき
る太陽電池用光閉じ込め構造体を提供することにある。However, in the structure of the prior art described above, when the light incident on one slope of the inverted pyramid is reflected on the back surface of the substrate and reaches the front surface again, most of the light is emitted to the outside. Therefore, the light could not be efficiently confined in the substrate. The object of the present invention is to solve the problems that the above-described conventional art had,
An object of the present invention is to provide a light confinement structure for a solar cell capable of confining incident light in a substrate significantly efficiently.
【0004】[0004]
【課題を解決するための手段】上記目的は、基板表面に
設けた少なくとも大小2種類の逆ピラミッド層の組合せ
からなることを特徴とする太陽電池用光閉じ込め構造体
とすること、特に、大きい逆ピラミッドの一つの斜面に
入射し、基板裏面で反射して再び基板表面に達した光の
主な部分が、隣り合う2対の大きい逆ピラミッドの互い
に接する2面で、上記入射光入射斜面と直角方向に傾斜
している斜面に入射する構成としたことを特徴とする太
陽電池用光閉じ込め構造体とすることによって達成する
ことができる。The above object is to provide an optical confinement structure for a solar cell, which is characterized by comprising a combination of at least two kinds of reverse pyramid layers provided on the surface of a substrate. The main part of the light that is incident on one slope of the pyramid, is reflected by the back surface of the substrate, and reaches the front surface of the substrate again, is the two surfaces of two adjacent pairs of large inverted pyramids that are in contact with each other, and are perpendicular to the incident light incident slope. This can be achieved by providing an optical confinement structure for a solar cell, which is configured to be incident on an inclined surface that is inclined in the direction.
【0005】[0005]
【作用】従来の光閉じ込め構造体は、図2に示したよう
に、下に凸の四角錐からなる同じサイズの逆ピラミッド
を並べた表面構造からなるものであった。この斜面1に
光3が入射すると、基板8の裏面で反射されて斜面2に
入射する。この場合、反射光7が斜面2に入射する角度
は入射光が斜面1から基板内に入射した角度と同じであ
るため、この光は基板外に出射する。As shown in FIG. 2, the conventional optical confinement structure has a surface structure in which inverted pyramids of the same size, which are downwardly convex quadrangular pyramids, are arranged. When the light 3 enters the slope 1, it is reflected by the back surface of the substrate 8 and enters the slope 2. In this case, the angle at which the reflected light 7 is incident on the slope 2 is the same as the angle at which the incident light is incident on the slope 1 into the substrate, so this light is emitted to the outside of the substrate.
【0006】これに対して、図1に示す本発明光閉じ込
め構造体の場合には、斜面1に入射した光は AA'に沿っ
て進み、斜面2に出射する。この斜面2は斜面1と異な
りY方向に傾斜しているため、基板裏面で反射された光
7は斜面2に大きな入射角度をもって入射する。このよ
うに境界面に浅く入射すると、光の反射率が大きくなる
ため、反射光7の多くが斜面2で反射され再び基板内を
走ることになる。また、屈折率の大きい物質から空気等
の屈折率の小さい物質に向かって光が入射する場合ある
いは入射角が大きい場合、つまり浅く入射する場合に
は、光は全反射するため、該斜面2に入射した光はすべ
て基板内に閉じ込められる。これによって、該基板8に
入射した光3のほとんどを効率よく基板8内に閉じ込め
ることができる。On the other hand, in the case of the light confinement structure of the present invention shown in FIG. 1, the light incident on the slope 1 travels along the line AA 'and is emitted to the slope 2. Since the slope 2 is inclined in the Y direction unlike the slope 1, the light 7 reflected on the back surface of the substrate enters the slope 2 at a large incident angle. When the light is incident on the boundary surface shallowly in this way, the reflectance of the light increases, so that most of the reflected light 7 is reflected by the slope 2 and travels inside the substrate again. Further, when light is incident from a substance having a large refractive index toward a substance having a small refractive index such as air, or when the incident angle is large, that is, when the light is incident shallowly, the light is totally reflected, so that the inclined surface 2 All incident light is confined within the substrate. As a result, most of the light 3 incident on the substrate 8 can be efficiently confined in the substrate 8.
【0007】これらの効果は、図3のように大きな逆ピ
ラミッドとそれより若干小さい逆ピラミッドとの組合せ
や、図4のように大きな逆ピラミッドとその半分の大き
さの逆ピラミッドとの組合せによっても得ることができ
る。These effects can also be obtained by combining a large inverse pyramid with a slightly smaller inverse pyramid as shown in FIG. 3 or a combination of a large inverse pyramid with an inverse pyramid half its size as shown in FIG. Obtainable.
【0008】[0008]
【実施例】以下、本発明の太陽電池用光閉じ込め構造体
について実施例によって具体的に説明する。本発明の一
実施例の構成について図5によって説明する。これまで
述べたように、斜面1に入射した光は基板裏面で反射
し、該反射光7が斜面2に入射するため、光が基板8内
に閉じ込められる。これを効率よく行うためには、基板
厚さ4、逆ピラミッド幅5と逆ピラミッド開き角10とが
特定の関係にある必要がある。本実施例の場合、大きい
逆ピラミッドの幅5と小さい逆ピラミッドの幅との比を
1対6とした。このため、 A‐A’直線に沿って3周期
のところで斜面1に入射した光が斜面2に再入射すると
効率よく光を閉じ込めることができる。このためには、
基板8の屈折率を3.6、基板厚さ4をw、逆ピラミッド
の開き角をEXAMPLES The optical confinement structure for a solar cell of the present invention will be specifically described below with reference to examples. The configuration of one embodiment of the present invention will be described with reference to FIG. As described above, the light incident on the slope 1 is reflected by the back surface of the substrate, and the reflected light 7 enters the slope 2, so that the light is confined in the substrate 8. In order to do this efficiently, the substrate thickness 4, the inverse pyramid width 5 and the inverse pyramid opening angle 10 must have a specific relationship. In the case of this embodiment, the ratio of the width 5 of the large inverted pyramid to the width of the small inverted pyramid is set to 1: 6. For this reason, when the light that has entered the slope 1 at three cycles along the line AA 're-enters the slope 2, the light can be efficiently confined. For this,
The refractive index of the substrate 8 is 3.6, the substrate thickness 4 is w, and the opening angle of the inverted pyramid is
【0009】[0009]
【数1】 [Equation 1]
【0010】とし、大きい逆ピラミッドの幅5をdとし
たとき、When the width 5 of the large inverted pyramid is d,
【0011】[0011]
【数2】 [Equation 2]
【0012】の関係を満たす必要がある。本実施例で
は、基板厚さ4を180μm、上式より大きい逆ピラミッド
の幅5を101μmとした。また、繰返し周期を大きくした
場合には、上式のnの数値を大きくすることによって基
板厚さ4と逆ピラミッドの幅5との関係を得ることがで
きる。It is necessary to satisfy the relationship of In this embodiment, the substrate thickness 4 is 180 μm, and the width 5 of the inverted pyramid larger than the above equation is 101 μm. Further, when the repetition period is increased, the relationship between the substrate thickness 4 and the inverse pyramid width 5 can be obtained by increasing the value of n in the above equation.
【0013】[0013]
【発明の効果】以上述べてきたように、太陽電池用光閉
じ込め構造体を本発明構成の構造体とすることによっ
て、従来技術の有していた課題を解決して、入射光を基
板内に格段に効率よく閉じ込めることのできる太陽電池
用光閉じ込め構造体を提供することができた。As described above, by using the optical confinement structure for a solar cell as the structure of the present invention, the problems of the prior art can be solved and incident light can be introduced into the substrate. It has been possible to provide a light confinement structure for a solar cell that can be confined significantly efficiently.
【図1】本発明太陽電池光閉じ込め構造体の一例の構造
を説明する概念図。FIG. 1 is a conceptual diagram illustrating the structure of an example of a solar cell light confinement structure of the present invention.
【図2】従来構造の光閉じ込め構造体の構造を説明する
概念図。FIG. 2 is a conceptual diagram illustrating the structure of a conventional light confinement structure.
【図3】本発明光閉じ込め構造体の他の例の構造を説明
する概念図。FIG. 3 is a conceptual diagram illustrating the structure of another example of the optical confinement structure of the present invention.
【図4】本発明光閉じ込め構造体のさらに他の例の構造
を説明する概念図。FIG. 4 is a conceptual diagram illustrating a structure of still another example of the optical confinement structure of the present invention.
【図5】本発明光閉じ込め構造体の一実施例の構造を説
明するための図。FIG. 5 is a diagram for explaining the structure of an embodiment of the optical confinement structure of the present invention.
1…斜面、2…斜面、3…入射光、4…基板厚さ、5…
逆ピラミッドの幅、6…逆ピラミッドの幅、7…反射
光、8…基板、9…入射角、10…開き角。1 ... Slope, 2 ... Slope, 3 ... Incident light, 4 ... Substrate thickness, 5 ...
Inverse pyramid width, 6 ... Inverse pyramid width, 7 ... Reflected light, 8 ... Substrate, 9 ... Incident angle, 10 ... Opening angle.
Claims (2)
逆ピラミッド層の組合せからなることを特徴とする太陽
電池用光閉じ込め構造体。1. A light confinement structure for a solar cell, comprising a combination of at least two kinds of large and small inverted pyramid layers provided on the surface of a substrate.
し、基板裏面で反射して再び基板表面に達した光の主な
部分が、隣り合う2対の大きい逆ピラミッドの互いに接
する2面で、上記入射光入射斜面と直角方向に傾斜して
いる斜面に入射する構成としたことを特徴とする請求項
1記載の太陽電池用光閉じ込め構造体。2. A main part of light which is incident on one slope of a large inverted pyramid, is reflected by the back surface of the substrate, and reaches the front surface of the substrate again, is the two surfaces of two adjacent pairs of large inverted pyramids which are in contact with each other. The light confinement structure for a solar cell according to claim 1, wherein the incident light is incident on a slope inclined at a right angle to the incident slope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5044878A JPH088370B2 (en) | 1993-03-05 | 1993-03-05 | Light confinement structure for solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5044878A JPH088370B2 (en) | 1993-03-05 | 1993-03-05 | Light confinement structure for solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06260670A true JPH06260670A (en) | 1994-09-16 |
| JPH088370B2 JPH088370B2 (en) | 1996-01-29 |
Family
ID=12703753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5044878A Expired - Fee Related JPH088370B2 (en) | 1993-03-05 | 1993-03-05 | Light confinement structure for solar cells |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088370B2 (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984493A3 (en) * | 1998-08-31 | 2000-06-28 | Sharp Kabushiki Kaisha | Solar battery cell and method for manufacturing the same |
| US20100294356A1 (en) * | 2009-04-24 | 2010-11-25 | Solexel, Inc. | Integrated 3-dimensional and planar metallization structure for thin film solar cells |
| JP2011503861A (en) * | 2007-11-05 | 2011-01-27 | フォトン ベスローテン フェノーツハップ | Photovoltaic device |
| US8294026B2 (en) * | 2008-11-13 | 2012-10-23 | Solexel, Inc. | High-efficiency thin-film solar cells |
| US20130167915A1 (en) * | 2009-12-09 | 2013-07-04 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers |
| US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
| US8926803B2 (en) | 2009-01-15 | 2015-01-06 | Solexel, Inc. | Porous silicon electro-etching system and method |
| US8946547B2 (en) | 2010-08-05 | 2015-02-03 | Solexel, Inc. | Backplane reinforcement and interconnects for solar cells |
| US8999058B2 (en) | 2009-05-05 | 2015-04-07 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
| US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
| JP5900867B1 (en) * | 2015-08-24 | 2016-04-06 | 株式会社高揚 | Solar panel and its surface structure |
| US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
| US9349887B2 (en) | 2006-10-09 | 2016-05-24 | Solexel, Inc. | Three-dimensional thin-film solar cells |
| US9397250B2 (en) | 2006-10-09 | 2016-07-19 | Solexel, Inc. | Releasing apparatus for separating a semiconductor substrate from a semiconductor template |
| US9401276B2 (en) | 2010-02-12 | 2016-07-26 | Solexel, Inc. | Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates |
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US9748414B2 (en) | 2011-05-20 | 2017-08-29 | Arthur R. Zingher | Self-activated front surface bias for a solar cell |
| US9870937B2 (en) | 2010-06-09 | 2018-01-16 | Ob Realty, Llc | High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space |
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Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984493A3 (en) * | 1998-08-31 | 2000-06-28 | Sharp Kabushiki Kaisha | Solar battery cell and method for manufacturing the same |
| US6313397B1 (en) | 1998-08-31 | 2001-11-06 | Sharp Kabushiki Kaisha | Solar battery cell |
| US9349887B2 (en) | 2006-10-09 | 2016-05-24 | Solexel, Inc. | Three-dimensional thin-film solar cells |
| US9397250B2 (en) | 2006-10-09 | 2016-07-19 | Solexel, Inc. | Releasing apparatus for separating a semiconductor substrate from a semiconductor template |
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| JP2011503861A (en) * | 2007-11-05 | 2011-01-27 | フォトン ベスローテン フェノーツハップ | Photovoltaic device |
| US20130284255A1 (en) * | 2008-11-13 | 2013-10-31 | Solexel, Inc. | High-Efficiency Thin-Film Solar Cells |
| US8294026B2 (en) * | 2008-11-13 | 2012-10-23 | Solexel, Inc. | High-efficiency thin-film solar cells |
| US8926803B2 (en) | 2009-01-15 | 2015-01-06 | Solexel, Inc. | Porous silicon electro-etching system and method |
| US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
| US20100294356A1 (en) * | 2009-04-24 | 2010-11-25 | Solexel, Inc. | Integrated 3-dimensional and planar metallization structure for thin film solar cells |
| US9099584B2 (en) * | 2009-04-24 | 2015-08-04 | Solexel, Inc. | Integrated three-dimensional and planar metallization structure for thin film solar cells |
| US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
| US8999058B2 (en) | 2009-05-05 | 2015-04-07 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
| US20130167915A1 (en) * | 2009-12-09 | 2013-07-04 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers |
| US8962380B2 (en) | 2009-12-09 | 2015-02-24 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers |
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|---|---|
| JPH088370B2 (en) | 1996-01-29 |
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