JPH06241932A - Micro device and its manufacturing method - Google Patents

Abstract

PURPOSE:To simplify mounting structure by providing leads of the first and second electrode parts and movable electrode part on the opposite surface to the silicon member of the first glass member. CONSTITUTION:On a middle part silicon board 2, by using anisotropic etching, a movable electrode 6 and an electrode lead member 3 which displace themselves according to external force are farmed, while connected and supported by silicon beam 4, etc. On upper and lower glass plates 1a and 1b, electrodes d1 and d2 of metal film are farmed. Then, by anode coupling, three layers, a silicon plate 2 and glass plates la and 1b, are jointed simultaneously. The member 3 is jointed to the glass plates 1a and 1b, and this part becomes airtight, and the electrode d2 is held in parts of the member 3, far conduction state. When, at the part of the glass plate 1a where the member 3 is positioned, a hole part 5 for a lead is provided, and an electrode d3 is vapor deposited on the inner surface and periphery of the hole, electrodes d2 and d3 are connected each other, for external lead. Further, the beam 4 is laser-cut through the glass plate 1a, so that electrodes are independent from each other. Thus, anode coupling is required only once, far simplified mounting method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microdevice used for controlling a vehicle body of an automobile, and more particularly to a microdevice suitable for a method of extracting electrodes in an airtight laminated structure.

[0002]

2. Description of the Related Art A conventional device of this type is a semiconductor capacitive acceleration sensor having a three-layer laminated structure of a glass plate, a silicon plate, and a glass plate, as disclosed in Japanese Patent Laid-Open No. 4-116465, which has a movable electrode. And a pair of fixed electrode wire bonding pads are arranged on an upper glass plate and a lower glass plate forming a step.

Further, as a capacitive pressure sensor having an airtight laminated structure having a space reference chamber on its inner surface, there is, for example, one disclosed in Japanese Patent Laid-Open No. 4-9727.

In this pressure sensor manufacturing method, an electrode formed on the inner surface of a glass plate having a hole is pulled out to the outside through a lead member made of a silicon plate, and a silicon plate for manufacturing the lead member is used. Is bonded to a glass plate in advance, and then a lead member is provided so as to close the hole of the glass by anisotropic etching or the like. Then, electrodes and electrode leads are formed by sputtering or vapor deposition means, and the lead members are connected to them at this time. Next, the manufactured glass plate and the silicon plate 20 having a diaphragm are joined together to obtain a capacitive pressure sensor including an airtight laminated structure having a space reference chamber on its inner surface.

[0005]

Of the above-mentioned conventional techniques,
In the former acceleration sensor, since a step must be provided between the upper glass plate and the lower glass plate in order to arrange the pads, the electrode of the sensor and the hybrid IC substrate must be connected by wire bonding. However, there is a problem that mounting wiring becomes complicated. In addition, the latter pressure sensor must use a silicon plate to manufacture the lead member, and thus requires a photolithography process, and the bonding is performed between the glass plate and the lead member, and the glass plate and the silicon plate. There is a problem in that the manufacturing process becomes complicated, such as the need for twice.

It is an object of the present invention to provide a micro device which can simplify the mounting structure.

Another object of the present invention is to provide a microdevice having an airtight laminated structure which can be easily manufactured by a manufacturing process and a manufacturing method thereof.

[0008]

The above object is to provide a first glass member having a first electrode portion, a second glass member having a second electrode portion, the first glass member and the first glass member. In a microdevice provided between the two glass members, comprising a silicon member having a movable electrode portion provided facing the first electrode portion and the second electrode portion,
By providing the lead-out portion of the first electrode portion, the lead-out portion of the second electrode portion, and the lead-out portion of the electrode of the movable electrode portion on the surface of the first glass member opposite to the silicon member. To be achieved.

Further, the above object is to provide a first glass member having a first electrode portion, a second glass member having a second electrode portion, the first glass member and the second glass member. In a microdevice provided between the first electrode portion and a silicon member having a movable electrode provided to face the second electrode portion, the first and second electrodes are , And is pulled out through the inside of the first glass member.

Further, the above object is to provide a first glass member having a first electrode portion, a second glass member having a second electrode portion, the first glass member and the second glass member. And a silicon device having a movable electrode, which is provided between the silicon member and the first and second glass members, and then fused to form at least one or more This is accomplished by having an electrode lead member.

Further, the above object is to provide a first glass member having a first electrode portion, a second glass member having a second electrode portion, the first glass member and the second glass member. And a silicon member having a movable electrode, which is provided between the silicon plate and the first glass plate and the second glass plate, and then the silicon member. This is accomplished by fusing a silicon beam supporting at least one or more electrode lead members made from the same substrate as.

[0012]

Since the lead-out portion of the electrode can be arranged on the one surface of the first glass member, the connection with other elements becomes easy.

After joining the silicon plate and the glass plate,
Since the electrode lead member is formed by melting the silicon beam with a laser, the microdevice has a high airtightness.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIG. In FIG. 1, 1a is an upper glass plate, 1b is a lower glass plate, 2 is a middle silicon plate, 3 is an electrode lead member, 4 is a silicon beam, and 1a is an upper glass plate,
The lower glass plate 1b and the middle silicon plate 2 are laminated structures bonded by anodic bonding to form a microdevice.

An electrode lead member 3 is manufactured from the middle silicon plate 2 by a processing technique of an anisotropic etching process. The electrode lead member 3 is connected and supported by the middle silicon plate 2 by the silicon beam 4, and is electrically connected. The middle silicon plate 2, the upper glass plate 1a, and the lower glass plate 1b are simultaneously joined by anodic bonding in three layers to hermetically seal the inside of the laminate. In the microdevice having such a structure, in this embodiment, the laser beam passing through the glass plate 1a or the lower glass plate 1b is used to melt and cut the silicon beam 4 for connecting and supporting the middle silicon plate 2 and the electrode lead member 3. The electrode lead member 3 is insulated from the middle silicon plate 2 and becomes an independent component. As described above, since it is possible to process the middle silicon plate 2 after lamination, it is possible to easily manufacture an airtight structure type device, which simplifies a device mounting method against an environment such as moisture, which results in higher reliability and lower cost. The manufacturing process can be facilitated.

Next, an embodiment of the present invention will be described with reference to FIGS. 2 is a plan view showing a microdevice according to the present invention, and FIG. 3 is a vertical sectional view taken along the line AA ′ of FIG.

In FIG. 2, reference numeral 1a denotes an upper glass plate and 1b.
Is a lower glass plate, 2 is a middle silicon plate, 3 is an electrode lead member, 4 is a silicon beam, 5 is an electrode lead hole formed in the upper glass plate 1a, and 6 is a movable electrode manufactured from the middle silicon plate 2. , D1 is an electrode formed on the upper glass plate 1a, d2 is an electrode formed on the lower glass plate 1b,
d3 is an electrode formed in the electrode lead hole portion 1a
The upper glass plate of 1b, the lower glass plate of 1b, and the middle silicon plate of 2 are laminated structures bonded by anodic bonding to form a microdevice. In this embodiment, the electrodes d1 and d2 formed on the inner surface of the laminated structure are pulled out to the outside through the electrode lead member 3 and the electrode lead hole portion, and the inside of the laminated body is hermetically sealed.

The manufacturing process of the above device and the electrode drawing method will be described below. Middle silicon plate 2
A movable electrode 6 and an electrode lead member 3 which are displaced by an external force are manufactured by an anisotropic etching process technique, and these are connected and supported by a silicon beam 4 or the like to a central silicon plate 2. On the other hand, electrodes d1 and d2 made of metal thin film electrodes are formed on the upper glass plate 1a and the lower glass plate 1b. The process here is performed individually. Next, three layers of the middle silicon plate 2, the upper glass plate 1a, and the lower glass plate 1b are simultaneously bonded by the glass / silicon anodic bonding technique to form a laminated structure. At this time, the movable electrode 6 is not joined because it has a gap between the glass plate 1a and the lower glass plate 1b, but since the electrode lead member 3 is joined to the upper and lower glass plates, this portion is airtight. In addition, the electrode d2 formed on the lower glass plate 1b in this process is sandwiched by a part of the electrode lead member 3 and is mechanically contacted by a bonding force, and these are brought into a conductive state. Therefore, if a through hole composed of the electrode lead hole portion 5 is provided in the portion of the upper glass plate 1a where the electrode lead member 3 is located, and the electrode d3 is formed on the inner surface of the through hole or the outer periphery thereof by sputtering or vapor deposition, the electrode d2 becomes an electrode. It is connected to the electrode d3 through the lead member 3 to ensure airtightness and can be drawn out to the outside. Further, the silicon beam 4 for connecting and supporting the electrode lead member 3 is fused and cut through a glass plate to form an independent system electrode. Although not shown in the figure, it goes without saying that the electrode d1 formed on the upper glass plate 1a also becomes an independent system electrode by the same method. According to this embodiment, the anodic bonding of the silicon plate and the glass plate is required only once,
In addition, since an airtight device can be used, the method of mounting the device in an environment such as humidity can be simplified, and thus high reliability and cost reduction can be achieved, and the manufacturing process can be facilitated.

Next, FIG. 4 showing an embodiment of the present invention will be described. Hereinafter, description of the same reference numerals as those in the above-described embodiment will be omitted, and only new components will be described.

4 is different from the embodiment shown in FIGS. 1 and 2 in that the electrode lead member 3 is supported by the insulator beam 7 made of an insulator, and the anodic bonding is performed once so that the lower glass plate is used. The metal thin film electrode 8 is formed on 1b, and the voltage at the time of bonding is set to the same potential as the electrode lead member 3 and the silicon plate 2. From this, as described in the above embodiment, the electrode d2 formed on the lower glass plate 1b is the electrode lead member 3
Are brought into contact with each other mechanically by the joining force, and they are brought into conduction. Therefore, if a through hole composed of the electrode lead hole portion 5 is provided in the portion of the upper glass plate 1a where the electrode lead member 3 is located, and the electrode d3 is formed on the inner surface of the through hole or the outer periphery thereof by sputtering or vapor deposition, the electrode d2 becomes an electrode. It is connected to the electrode d3 through the lead member 3 to ensure airtightness and can be drawn out to the outside. Then, the metal thin film electrode 8 is melted by a laser to blow the insulator beam 7 for connecting and supporting the electrode lead member 3 through a glass plate to form an independent system electrode. The electrode d1 formed on the upper glass plate 1a by the same method also becomes an independent system electrode by the same method. According to this embodiment, the anodic bonding of the silicon plate and the glass plate is required only once, and the airtight device can be realized. Therefore, the device mounting method with respect to the environment such as humidity can be simplified, and the high reliability can be obtained. And cost reduction, and the manufacturing process becomes easy.

Next, a method for manufacturing the microdevice of the present invention will be described with reference to FIG. In FIG. 5, the cutting of the silicon beam is performed by means of a dry etching process of silicon or mechanical means such as sucking the silicon beam portion. The manufacturing process will be described below. (1) is the middle silicon plate 2, and the electrode lead member 3, silicon beam 4 and movable electrode 6 are manufactured on the same silicon plate. The middle silicon plate 2 is bonded to the upper glass plate 1a having the electrode d1 by the anodic bonding technique as shown in (2). At this time, an electrode 9 having the same potential as the silicon plate 2 is arranged on the upper glass plate 1a to prevent the silicon beam 4 from being bonded to the glass side.
Then, in (3), as described above, the cutting of the silicon beam is performed by means of a silicon dry etching process,
Alternatively, it is performed by mechanical means such as sucking the silicon beam portion. As a result, as shown in (4), the electrode d2 formed on the lower glass plate 1b is pulled out to the outside through the electrode lead member 3b and the electrode lead hole 5 '. Similarly, as shown in (5), the electrode d2 formed on the upper glass plate 1a is drawn to the outside through the electrode lead member 3a and the electrode lead hole portion 5. According to this embodiment, the manufacturing process can be simplified because the semiconductor process can be used and can be performed mechanically.

Next, another method for manufacturing a microdevice of the present invention will be described with reference to FIG. In FIG.
As shown in (3) and (4), when the middle silicon plate 2 and the lower glass plate 1b are bonded by the anodic bonding technique, the bonding force acting between the glass and the silicon is used to make the silicon beam 4
The cutting is done. According to this embodiment, since the semiconductor process can be used, the manufacturing process can be simplified.

Next, FIGS. 7, 8 and 9 showing one embodiment of the present invention will be described. In these figures, 3 is an electrode lead member connected and supported to the middle silicon plate 2 by an insulating beam, and 7 is an insulating beam connecting and supporting the electrode lead member 3. The insulating beam shown in this embodiment is formed by using SiO _{2 because} of the ease of the manufacturing process, but it can be realized by using another insulating material such as SiNx. The insulating beam 7 is manufactured and arranged on the surface 100 of the silicon plate at an angle of 45 degrees so as to support the silicon solid pillar. This is because when the silicon in the penetrating portion between the middle silicon plate 2 and the electrode lead member 3 is removed by anisotropic etching, the silicon under the insulating beam 7 is also removed at the same time, and stress on the insulating beam 7 is minimized. This is to prevent damage and cracks. As shown in FIG. 7, the insulating beams 7 are arranged at the four corners of the electrode lead member 3, as shown in FIG. 8, arranged in a V shape with respect to the electrode lead member 3, and as shown in FIG. Electrode lead member 3
Is supported by a cantilever type insulated beam 7. According to this embodiment, the time for the anisotropic etching process of the insulating beam 7 can be shortened, and the stress on the insulating beam 7 can be relieved, so that damage and cracks can be prevented.

Next, the microdevice processing apparatus of the present invention will be described with reference to FIG. In FIG. 10, 100
Is a laser power source, 200 is a laser head, 300 is an optical fiber, and 400 is a condenser lens which constitutes a YAG laser device. Reference numeral 500 is a microdevice processed by the YAG laser device. The fusing of the silicon beam and the cutting of the metal thin film electrode need to be performed through a glass plate, and this can be realized by using the YAG laser device which is generally used. As a processing method with a laser device, there are a pulse laser method in which a single pulse is irradiated, a continuous irradiation method in which a laser is continuously irradiated, and a method in which the above two methods are combined. Since the shapes of the silicon beam and the metal thin film electrode in the present invention are small and thin, the pulse laser method or the continuous irradiation method, which does not have strong cutting and cutting power, may be used. Although not shown in the figure, for example, V-grooves and U-grooves are preliminarily formed in the silicon beam to be blown to facilitate the cutting. According to this embodiment, silicon can be processed through the glass plate, and the airtight device can be easily manufactured.

Next, an embodiment of the microdevice of the present invention will be described with reference to FIG. In FIG. 11, 6
00 is a housing, and 700 is a plastic package, which shows an example of a mounting method. In a method of mounting a device mounted on a housing, a method of using a metallic cap in order to prevent the influence of moisture and the like and sealing the inside by applying a vacuum is often used. However, this method is costly because the process is complicated. According to the present embodiment, since the microdevice has an airtight structure, it is not easily affected by moisture and the like. Therefore, the mounting method also uses the plastic package shown in the figure without using the metallic cap. It can be simplified by doing. As a result, the cost can be reduced and the manufacturing process can be facilitated.

Next, an embodiment of the microdevice of the present invention will be described with reference to FIGS. 12, 13, 14, and 15. 12 is a plan view showing a microdevice according to the present invention, FIG. 13 is a vertical sectional view taken along the line AA ′ of FIG. 12, and FIG. 14 is a cross-sectional view of FIG.
FIG. 15 is a vertical sectional view taken along the line B ', and FIG. 15 is a vertical sectional view taken along the line CC' in FIG.

The microdevice shown in the figure is a laminated structure formed by anodic bonding an upper glass plate 1a, a middle silicon plate 2 and a lower glass plate 1b, each having an electrode. 13 shows the electrode formed on the lower glass plate 1b on the electrode portion d1 of the electrode lead hole 5a provided on the upper glass plate 1a through the electrode lead member 3b, and FIG. 14 shows the silicon plate directly provided on the upper glass plate 1a. 15 is connected to the electrode portion d2 of the electrode lead hole 5b, and in FIG. 15, the electrode formed on the upper glass plate 1a is connected to the electrode portion d3 of the electrode lead hole 5c provided on the upper glass plate 1a through the electrode lead member 3a. The three electrodes were taken out on the same surface of the upper glass plate 1a. According to the present embodiment, a plurality of electrodes to be a three-dimensional wiring can be taken out on the same plane, so that the mounting surface such as the connection method with other elements can be simplified.

Next, the microdevice of the present invention is shown in FIG.
6, which will be described with reference to FIG. In these figures, FIG. 16 is a plan view at the time of mounting, and FIG. 17 is a sectional view of FIG. In the figure, 100 is a micro device, 110 is 1C, 120 is a hybrid IC substrate, and 130 is an electrode wiring. The microdevice 100 drives this I
It is connected to C110 via electrode wiring 130 and mounted on the hybrid IC substrate 120. At this time, since the plurality of electrodes of the microdevice 100 are provided on the same plane, the electrode wiring 130 on the hybrid IC substrate 120 can be directly connected to the IC and surface mounting can be realized. Than this,
Wiring work by wire bonding is eliminated and simple mounting wiring is possible.

FIG. 18 shows an airbag system diagram to which the microdevice of the present invention is applied. Acceleration sensor 10
Information regarding the acceleration measured from the first electrode lead hole 5a, 5b, 5c is taken out and input to the acceleration detection unit 102 to obtain the acceleration. The detected acceleration is input to the control unit 103 of the airbag device 104.
The control unit 103 determines whether to drive the airbag and drives the airbag device. Since the airbag system requires very high precision detection, the reliability of the entire system is improved by using the microdevice of the present invention.

As described above, each embodiment of the present invention has the following effects.

According to the embodiment shown in FIG. 1, after the anodic bonding of the silicon plate and the glass plate, the silicon part for connecting and supporting the silicon plate and the silicon member made of the same silicon plate is attached to the glass plate. By fusion cutting with a laser through the plate, the silicon plate and the silicon member are electrically insulated, from which, since it is possible to air-tight device, it is possible to simplify the method of mounting the device to the environment such as humidity, thereby, High reliability, low cost and easy manufacturing process.

According to the embodiment shown in FIGS. 2 and 3, one or a plurality of electrode lead members made so as to be supported by a beam of silicon from the same silicon substrate as one or a plurality of electrode lead members. And a glass plate having an electrode lead hole are anodically bonded to each other to ensure the airtightness in the hole portion, and after the bonding, the laser beam is melted and cut by a laser so that the electrode lead members are separated from each other. Since the anodic bonding of the plate and the glass plate is required only once, and the airtight device is possible, the method of mounting the device in environments such as humidity can be simplified, and thus high reliability and cost reduction can be achieved. In addition, the manufacturing process becomes easy.

According to the embodiment shown in FIG. 4, one or a plurality of electrode lead members and one or a plurality of electrode lead members made to be supported by a beam of an insulating material and electrode lead holes are provided. Anodically bonding with a glass plate to ensure airtightness in the hole, and after bonding, separate the metal lead electrode provided on the glass for bonding with a laser to separate the electrode lead members. Therefore, the anodic bonding of the silicon plate and the glass plate only needs to be done once, and the airtight device is possible, so the method of mounting the device in environments such as humidity can be simplified, resulting in higher reliability and lower cost. And the manufacturing process becomes easy.

According to the embodiment shown in FIG. 5, the cutting of the silicon beam can be performed by means of a dry etching process of silicon and mechanical means such as sucking the silicon beam portion. Since it can be done, the process can be simplified.

According to the embodiment shown in FIG. 6, the silicon beam can be cut by the bonding force generated at the time of anodic bonding, so that the process can be simplified.

According to the embodiments shown in FIGS. 7, 8 and 9,
The beam of one or more insulators is 100
Since it is manufactured and arranged at an angle of 45 degrees on the surface and supports the silicon solid pillar, the time of the anisotropic etching process can be shortened and the process can be simplified.

According to the embodiment shown in FIG. 10, the fusing of the silicon beam or the thin film metal electrode is performed by the YAG laser device by the pulse laser method, the continuous irradiation method, or any one of the continuous irradiation method and the pulse method. Since silicon can be processed through glass, the process can be simplified.

According to the embodiment shown in FIG. 11, since the microdevice is mounted by the plastic package, the mounting method can be simplified, which results in high reliability and high reliability.
The cost can be reduced and the manufacturing process can be facilitated.

According to the embodiments shown in FIGS. 12 to 16, the connection between the electrodes and the other elements can be simplified, so that the mounting structure is simplified.

[0040]

According to the present invention, the mounting structure of the micro device can be simplified. In addition, the manufacturing process of the microdevice of the airtight laminated structure can be facilitated.

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of a microdevice of the present invention.

FIG. 2 is a diagram showing an embodiment of the microdevice of the present invention.

3 is a vertical sectional view taken along the line AA ′ in FIG.

FIG. 4 is a diagram showing an embodiment of the microdevice of the present invention.

FIG. 5 is a diagram showing a method for manufacturing a microdevice of the present invention.

FIG. 6 is a diagram showing a method for manufacturing a microdevice of the present invention.

FIG. 7 is a diagram showing an embodiment of the microdevice of the present invention.

FIG. 8 is a diagram showing a modification of FIG. 7.

FIG. 9 is a diagram showing a modification of FIG. 7.

FIG. 10 is a view showing a microdevice processing apparatus of the present invention.

FIG. 11 is a diagram showing a mounting structure of a micro device of the present invention.

FIG. 12 is a view showing another embodiment of the microdevice of the present invention.

13 is a cross-sectional view taken along the line AA ′ of FIG.

14 is a cross-sectional view taken along the line BB ′ of FIG.

15 is a cross-sectional view taken along the line CC ′ of FIG.

FIG. 16 is a view showing another embodiment of the microdevice of the present invention.

FIG. 17 is a sectional view of FIG.

FIG. 18 is a system diagram in which the microdevice of the present invention is applied to an airbag system.

[Explanation of symbols]

1a ... upper glass plate, 1b ... lower glass plate, 2 ... middle silicon plate, 3 ... electrode lead member, 4 ... silicon beam,
5 ... Electrode lead hole, 6 ... Movable electrode, 7 ... Insulating beam, 8 ... Thin film electrode, d1, d2, d3 ... Electrode.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Kuragaki 7-1-1 Omika-cho, Hitachi City, Ibaraki Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Satoshi Shimada 7-chome, Omika-cho, Hitachi City, Ibaraki Prefecture No. 1 Incorporated company Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Kazuo Sato No. 502 Kintatecho, Tsuchiura City, Ibaraki Prefecture In the Mechanical Research Laboratory, Hiritsu Seisakusho Co., Ltd. (72) Akira Koide 502 Kintate Town, Tsuchiura City, Ibaraki Prefecture In the Institute of Mechanical Research, Hiritsu Seisakusho Co., Ltd. (72) Masayoshi Suzuki, 2520 Takaba, Takata, Ibaraki Pref., Automotive Equipment Division, Hitachi, Ltd. (72) Norio Ichikawa 2520, Takata, Katsuta, Ibaraki (72) Inventor Junichi Horie Hitachi, Ltd. Sakusho automotive equipment business unit

Claims (10)

[Claims] 1. A first glass member having a first electrode portion, a second glass member having a second electrode portion, and between the first glass member and the second glass member. In a microdevice provided with the first electrode portion and a silicon member having a movable electrode portion provided so as to face the second electrode portion, a lead portion of the first electrode portion, A microdevice characterized in that a lead-out portion of the second electrode portion and a lead-out portion of the movable electrode portion are provided on a surface of the first glass member opposite to the silicon member. 2. A first glass member having a first electrode portion, a second glass member having a second electrode portion, and between the first glass member and the second glass member. In a microdevice provided with the first electrode portion and a silicon member having a movable electrode provided to face the second electrode portion, the first and second electrodes are the first and second electrodes. A microdevice characterized by being drawn out through a glass member. 3. The silicon member according to claim 2,
A microdevice comprising an electrode lead member for drawing out the first and second electrodes to the outside. 4. A first glass member having a first electrode portion, a second glass member having a second electrode portion, and between the first glass member and the second glass member. A microdevice provided with a silicon member having a movable electrode provided facing the first electrode portion and the second electrode portion, wherein the silicon member and the first and second glass members are provided. A microdevice having at least one or more electrode lead members formed by fusing after joining and. 5. The microdevice according to claim 4, wherein the electrode lead member is formed by fusing a silicon beam with a laser. 6. A first glass member having a first electrode portion, a second glass member having a second electrode portion, and between the first glass member and the second glass member. In a method for manufacturing a microdevice provided with a silicon member having a movable electrode, the silicon plate is bonded to the first glass plate and the second glass plate, and then the same substrate as the silicon member. 1. A method of manufacturing a microdevice, characterized in that at least one or more electrode lead members made of the above are melt-cut by cutting a silicon beam supporting them in order to separate them from the substrate. 7. The method of manufacturing a microdevice according to claim 6, wherein the melting of the silicon beam is carried out by laser through the first glass plate. 8. The method of manufacturing a microdevice according to claim 6, wherein the fusing of the silicon beam is performed by a pulse laser method or a continuous irradiation method. 9. The acceleration sensor according to claim 1, wherein the microdevice is a laminated structure structure in which the first and second glass members and the silicon member are bonded to each other. And a micro device. 10. An air bag device, a micro device according to claim 9, and a control unit for controlling the air bag device based on acceleration detected from the micro device. Airbag system.