JPH06237032A - Semiconductor-laser excited solid laser device - Google Patents
Semiconductor-laser excited solid laser deviceInfo
- Publication number
- JPH06237032A JPH06237032A JP4322493A JP4322493A JPH06237032A JP H06237032 A JPH06237032 A JP H06237032A JP 4322493 A JP4322493 A JP 4322493A JP 4322493 A JP4322493 A JP 4322493A JP H06237032 A JPH06237032 A JP H06237032A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- solid
- semiconductor
- state laser
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体レーザー励起固体
レーザー装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser pumped solid state laser device.
【0002】[0002]
【従来の技術】従来の半導体レーザー(Laser-Diode 以
下LDと略す)励起固体レーザー装置は図3模式図に示
す通りであり、励起用のLD1より出射されたLD光2
を結合レンズ3により集光し、レーザー媒質である固体
レーザーロッド4の端面5より固体レーザー発振領域1
0内に入射する。固体レーザーロッド4の端面5には、
LD光2を良く透過し、固体レーザー発振光6を反射す
るコーティングが施してある。一方凹面鏡7の凹面8に
は固体レーザー発振光6を殆ど(90〜99%)反射
し、わずかに(1〜10%)透過するようなコーティン
グが施してある。固体レーザーロッド4の端面5と凹面
鏡7の凹面8はその中心軸が一致しておりレーザー共振
器を構成している。LD光2によって励起された固体レ
ーザー発振光6はこの共振器にて増幅され、その一部が
出力光9となって凹面鏡7より出射される。2. Description of the Related Art A conventional semiconductor laser (Laser-Diode, abbreviated as LD hereinafter) pumped solid-state laser device is as shown in the schematic view of FIG. 3, and LD light 2 emitted from a pumping LD 1 is used.
Is collected by a coupling lens 3 and a solid laser oscillation region 1 is formed from an end surface 5 of a solid laser rod 4 which is a laser medium.
It is incident within 0. On the end face 5 of the solid-state laser rod 4,
A coating is provided that transmits the LD light 2 well and reflects the solid-state laser oscillation light 6. On the other hand, the concave surface 8 of the concave mirror 7 is provided with a coating that reflects the solid laser oscillation light 6 almost (90 to 99%) and slightly transmits it (1 to 10%). The central axes of the end surface 5 of the solid-state laser rod 4 and the concave surface 8 of the concave mirror 7 are coincident with each other to form a laser resonator. The solid-state laser oscillation light 6 excited by the LD light 2 is amplified by this resonator, and a part thereof becomes output light 9 and is emitted from the concave mirror 7.
【0003】このようなLD励起固体レーザー装置は従
来の希ガス放電ランプ励起固体レーザーに比べて、(1)
コンパクト、(2) 長寿命、(3) 高発振効率( 励起光パワ
ー/出力パワー) 等の特徴を持っているが、このうち
(1),(2) はLD固有の特徴であり、(3) については2つ
の理由がある。1つは、LDの発振波長が単一であるた
め、それを固体レーザーロッドの吸収波長帯に一致させ
ることにより吸収率が良好であることから来ている。も
う1つは、LDの光源の大きさが従来の希ガス放電ラン
プに比べて小さいこと(1mm2 以下)及び拡がり角が小
さいことにより、それをレンズ等で集光し、固体レーザ
ーロッドの発振領域に集中して注入できるからである。
従って、LDからの励起光と固体レーザーロッドの発振
領域との空間的整合が発振効率向上の要点である。しか
し、LDは図4説明図に示すようにその発光パターンが
楕円であることから、図3のロッド端面5における断面
図5に斜線で示すように、整合しない部分が生じ効率が
低下する問題点がある。Such an LD-pumped solid-state laser device has a (1)
It has features such as compactness, (2) long life, and (3) high oscillation efficiency (pump light power / output power).
(1) and (2) are characteristics peculiar to LD, and there are two reasons for (3). One is that since the oscillation wavelength of the LD is single, the absorptivity is good by matching it with the absorption wavelength band of the solid-state laser rod. The other is that the size of the LD light source is smaller than the conventional rare gas discharge lamp (1 mm 2 or less) and the divergence angle is small, so that it is condensed by a lens or the like to oscillate the solid laser rod. This is because the injection can be concentrated in the area.
Therefore, spatial matching between the excitation light from the LD and the oscillation region of the solid-state laser rod is a key point for improving the oscillation efficiency. However, since the light emitting pattern of the LD is elliptic as shown in the explanatory view of FIG. 4, there is a problem in that there is a mismatched portion and the efficiency is reduced, as shown by the diagonal lines in the sectional view 5 of the rod end surface 5 in FIG. There is.
【0004】[0004]
【発明が解決しようとする課題】本発明は、このような
事情に鑑みて提案されたもので、従来に比べて更に発振
効率が向上する半導体レーザー励起固体レーザー装置を
提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been proposed in view of the above circumstances, and an object thereof is to provide a semiconductor laser pumped solid-state laser device in which the oscillation efficiency is further improved as compared with the prior art. .
【0005】[0005]
【課題を解決するための手段】そのために本発明は、半
導体レーザー光を固体レーザーロッドに入射することで
同ロッドを励起しレーザー発振を行う半導体レーザー励
起固体レーザー装置において、出力ミラーとして、半導
体レーザーの接合面に垂直な方向の曲率半径と水平な方
向の曲率半径とが異なりその比が垂直な方向と水平な方
向との拡がり角の比に等しく、光軸に垂直な断面の形状
が楕円である楕円ミラーを用いることを特徴とする。To this end, the present invention is directed to a semiconductor laser pumped solid-state laser device that excites the solid-state laser rod by injecting the semiconductor laser light into the solid-state laser rod to cause laser oscillation. The radius of curvature in the direction perpendicular to the joining surface of the and the radius of curvature in the horizontal direction are different, and their ratio is equal to the ratio of the divergence angle between the vertical direction and the horizontal direction, and the shape of the cross section perpendicular to the optical axis is an ellipse. It is characterized by using an elliptical mirror.
【0006】[0006]
【作用】本発明半導体レーザー励起固体レーザー装置に
おいては、出力ミラーとして、LDの接合面に垂直な方
向と水平な方向とで曲率半径が異なりその比が垂直な方
向と水平な方向との拡がり角の比に等しく、光軸に垂直
な断面の形状が楕円である楕円ミラーを用いると、固体
レーザーの発振モードの断面形状も楕円となるので、L
D励起光の発光パターンと一致し、LD励起光と固体レ
ーザー発振領域との空間的整合が図られ発振効率が向上
する。In the semiconductor laser pumped solid-state laser device of the present invention, as the output mirror, the radii of curvature differ between the direction perpendicular to the joining surface of the LD and the direction horizontal to the divergence angle between the direction perpendicular and the direction horizontal. If an elliptical mirror whose cross section perpendicular to the optical axis is equal to the ratio is used, the cross-sectional shape of the oscillation mode of the solid-state laser will also be elliptical.
The LD excitation light coincides with the emission pattern of the D excitation light, the LD excitation light and the solid-state laser oscillation region are spatially matched, and the oscillation efficiency is improved.
【0007】[0007]
【実施例】本発明半導体レーザー励起固体レーザー装置
の一実施例を図面について説明すると、図1は本装置の
模式図で、同図(A)はLD接合面に垂直な断面を示
し、同図(B)はLD接合面に水平な断面を示す。図2
は固体レーザーロッドの端面における断面図である。図
1において、11はLD1の接合面に垂直な方向と水平
な方向とで曲率半径が異なり、その比がLD1の接合面
12に垂直な方向と水平な方向との拡がり角の比に等し
く、光軸に垂直な断面の形状が楕円である楕円ミラーで
あり、他の部材は図3と同じである。LD1からのLD
光2は従来と同様に結合レンズ3にて集光された後、固
体レーザーロッド4の端面5よりレーザー発振領域10
内に入射される。そうすると、固体レーザーロッド4の
端面5と楕円ミラー11の凹面8にて構成される共振器
により発振するビームは、その断面形状が楕円となって
いるので、図2に示すようにLD励起光の断面形状と一
致することとなり、発振効率が高くなる。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor laser pumped solid-state laser device of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view of the device, and FIG. 1A shows a cross section perpendicular to an LD bonding surface. (B) shows a cross section horizontal to the LD bonding surface. Figure 2
FIG. 4 is a sectional view of an end surface of a solid-state laser rod. In FIG. 1, 11 has different radii of curvature in the direction perpendicular to the joint surface of LD1 and in the horizontal direction, and the ratio is equal to the ratio of the divergence angle between the direction perpendicular to the joint surface 12 of LD1 and the horizontal direction, This is an elliptical mirror whose cross section perpendicular to the optical axis is elliptical, and the other members are the same as in FIG. LD from LD1
The light 2 is condensed by the coupling lens 3 as in the conventional case, and then the laser oscillation region 10 is emitted from the end face 5 of the solid laser rod 4.
Is injected inside. Then, the beam oscillated by the resonator constituted by the end surface 5 of the solid-state laser rod 4 and the concave surface 8 of the elliptical mirror 11 has an elliptical cross-sectional shape, so that as shown in FIG. Since it matches the cross-sectional shape, the oscillation efficiency increases.
【0008】[0008]
【発明の効果】要するに本発明によれば、半導体レーザ
ー光を固体レーザーロッドに入射することで同ロッドを
励起しレーザー発振を行う半導体レーザー励起固体レー
ザー装置において、出力ミラーとして、半導体レーザー
の接合面に垂直な方向の曲率半径と水平な方向の曲率半
径とが異なりその比が垂直な方向と水平な方向との拡が
り角の比に等しく、光軸に垂直な断面の形状が楕円であ
る楕円ミラーを用いることにより、従来に比べて更に発
振効率が向上する半導体レーザー励起固体レーザー装置
を得るから、本発明は産業上極めて有益なものである。In summary, according to the present invention, in a semiconductor laser pumped solid-state laser device which excites a solid-state laser rod by injecting the semiconductor laser light into the solid-state laser rod to cause laser oscillation, a junction surface of the semiconductor laser is used as an output mirror. An elliptical mirror whose radius of curvature in the direction perpendicular to and the radius of curvature in the horizontal direction are different and whose ratio is equal to the ratio of the divergence angle between the vertical direction and the horizontal direction and whose cross section perpendicular to the optical axis is elliptical By using a semiconductor laser pumped solid-state laser device, the oscillation efficiency of which is further improved as compared with the prior art, the present invention is extremely useful industrially.
【図1】本発明半導体レーザー励起固体レーザー装置の
一実施例の模式図で、同図(A)はLD接合面に垂直な
断面を示し、同図(B)はLD接合面に水平な断面を示
す。FIG. 1 is a schematic view of an embodiment of a semiconductor laser pumped solid-state laser device of the present invention, where FIG. 1A shows a cross section perpendicular to an LD bonding surface, and FIG. 1B shows a cross section horizontal to the LD bonding surface. Indicates.
【図2】同上における固体レーザーロッド端面における
断面図である。FIG. 2 is a sectional view of the end surface of the solid-state laser rod in the above.
【図3】従来の半導体レーザー励起固体レーザー装置の
模式図である。FIG. 3 is a schematic diagram of a conventional semiconductor laser pumped solid-state laser device.
【図4】半導体レーザーのビーム拡がり状況を示す説明
図である。FIG. 4 is an explanatory diagram showing a beam divergence state of a semiconductor laser.
【図5】従来の半導体レーザー励起固体レーザー装置の
固体レーザーロッド端面における断面図である。FIG. 5 is a cross-sectional view of a solid-state laser rod end surface of a conventional semiconductor-laser-pumped solid-state laser device.
1 半導体レーザー 4 固体レーザーロッド 11 楕円ミラー 12 半導体レーザーの接合面 1 Semiconductor laser 4 Solid-state laser rod 11 Elliptical mirror 12 Bonding surface of semiconductor laser
Claims (1)
に入射することで同ロッドを励起しレーザー発振を行う
半導体レーザー励起固体レーザー装置において、出力ミ
ラーとして、半導体レーザーの接合面に垂直な方向の曲
率半径と水平な方向の曲率半径とが異なりその比が垂直
な方向と水平な方向との拡がり角の比に等しく、光軸に
垂直な断面の形状が楕円である楕円ミラーを用いること
を特徴とする半導体レーザー励起固体レーザー装置。1. A semiconductor laser-excited solid-state laser device that excites a solid-state laser rod to oscillate the same by injecting the semiconductor laser light into the solid-state laser rod. Is different from the radius of curvature in the horizontal direction and its ratio is equal to the ratio of the divergence angle between the vertical direction and the horizontal direction, and an elliptical mirror whose cross section perpendicular to the optical axis is elliptical is used. Semiconductor laser pumped solid-state laser device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4322493A JPH06237032A (en) | 1993-02-08 | 1993-02-08 | Semiconductor-laser excited solid laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4322493A JPH06237032A (en) | 1993-02-08 | 1993-02-08 | Semiconductor-laser excited solid laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06237032A true JPH06237032A (en) | 1994-08-23 |
Family
ID=12657947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4322493A Withdrawn JPH06237032A (en) | 1993-02-08 | 1993-02-08 | Semiconductor-laser excited solid laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06237032A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016001675A (en) * | 2014-06-12 | 2016-01-07 | 株式会社リコー | Laser medium, laser device, laser processing machine, display device, and manufacturing method of laser medium |
-
1993
- 1993-02-08 JP JP4322493A patent/JPH06237032A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016001675A (en) * | 2014-06-12 | 2016-01-07 | 株式会社リコー | Laser medium, laser device, laser processing machine, display device, and manufacturing method of laser medium |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000509 |