JPH06224526A - Dielectric substrate - Google Patents
Dielectric substrateInfo
- Publication number
- JPH06224526A JPH06224526A JP3123093A JP3123093A JPH06224526A JP H06224526 A JPH06224526 A JP H06224526A JP 3123093 A JP3123093 A JP 3123093A JP 3123093 A JP3123093 A JP 3123093A JP H06224526 A JPH06224526 A JP H06224526A
- Authority
- JP
- Japan
- Prior art keywords
- polyolefin resin
- film
- porous fluororesin
- dielectric substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 229920005672 polyolefin resin Polymers 0.000 claims abstract description 33
- 238000010030 laminating Methods 0.000 claims abstract description 9
- -1 polyethylene Polymers 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 12
- 239000004698 Polyethylene Substances 0.000 claims description 8
- 229920000573 polyethylene Polymers 0.000 claims description 8
- 239000004743 Polypropylene Substances 0.000 claims description 5
- 229920001155 polypropylene Polymers 0.000 claims description 5
- 238000000576 coating method Methods 0.000 abstract description 2
- 229920002313 fluoropolymer Polymers 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 32
- 238000007747 plating Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000126 substance Substances 0.000 description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 239000011737 fluorine Substances 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229920001477 hydrophilic polymer Polymers 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229920001480 hydrophilic copolymer Polymers 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000006261 foam material Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229920000544 Gore-Tex Polymers 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002759 woven fabric Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 102000008186 Collagen Human genes 0.000 description 1
- 108010035532 Collagen Proteins 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 108010068370 Glutens Proteins 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229920001436 collagen Polymers 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000021312 gluten Nutrition 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- 239000001472 potassium tartrate Substances 0.000 description 1
- 229940111695 potassium tartrate Drugs 0.000 description 1
- 235000011005 potassium tartrates Nutrition 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical group O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000661 sodium alginate Substances 0.000 description 1
- 235000010413 sodium alginate Nutrition 0.000 description 1
- 229940005550 sodium alginate Drugs 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000001433 sodium tartrate Substances 0.000 description 1
- 229960002167 sodium tartrate Drugs 0.000 description 1
- 235000011004 sodium tartrates Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、プリント配線板、平面
アンテナ内挿基板、高周波線路を有する基板として用い
られる誘電体基板及びその中間材料として用いられる誘
電体基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric substrate used as a printed wiring board, a planar antenna insertion substrate, a substrate having a high-frequency line, and a dielectric substrate used as an intermediate material.
【0002】[0002]
【従来の技術及びその問題点】ポリエチレン、ポリプロ
ピレンで代表されるポリオレフィン系樹脂材料は、ポリ
テトラフルオロエチレン等のふっ素樹脂材料とほぼ同等
の低誘電率、低誘電損失を持った非常に優れた誘電体材
料である。また、ポリオレフィン系樹脂材料は、容易に
織布、不織布、或いは発泡材料として加工可能であり、
さらに非常に安価である。従って、ポリオレフィン系樹
脂材料は、これらの特長を生かして、電子材料用途とし
ても平面アンテナ、高周波同軸線等の誘電体材料として
多用されている。2. Description of the Related Art Polyolefin resin materials typified by polyethylene and polypropylene have extremely low dielectric constant and low dielectric loss, which are almost the same as those of fluororesin materials such as polytetrafluoroethylene. It is a body material. Further, the polyolefin resin material can be easily processed as a woven cloth, a nonwoven cloth, or a foam material,
It is also very cheap. Therefore, taking advantage of these features, the polyolefin-based resin material is widely used as a dielectric material such as a planar antenna and a high frequency coaxial wire for electronic materials.
【0003】しかし、ポリオレフィン系樹脂材料は極性
をもたないので化学的な接着性が非常に悪く、また一般
に他のエンジニアリングプラスチックと比較すると耐熱
性に劣る欠点がある。ポリオレフィン系樹脂材料はこの
ような欠点を持っているために、金属等の他の材料と複
合化することは非常に難しく、これまで単独で使用され
てきた。従って、ポリオレフィン銅張り基板、ポリオレ
フィン銅張りフィルム等の製品はほとんど上市されてい
ないのが実状である。However, since polyolefin resin materials have no polarity, they have very poor chemical adhesion, and generally have the drawback of being inferior in heat resistance as compared with other engineering plastics. Since the polyolefin resin material has such drawbacks, it is very difficult to form a composite with another material such as metal, and it has been used alone until now. Therefore, in reality, products such as polyolefin copper-clad substrates and polyolefin copper-clad films have not been put on the market.
【0004】ところで、最近ポリオレフィン系樹脂材料
用の特殊な接着用フィルム等が開発され始めたが、これ
らの接着用フィルムを用いて複合化を行った場合は誘電
損失等の電気特性を悪化させるため、高周波用途での使
用は好ましくない。By the way, recently, a special adhesive film or the like for a polyolefin resin material has begun to be developed. However, when compounding is performed using these adhesive films, electrical characteristics such as dielectric loss are deteriorated. However, use in high frequency applications is not preferable.
【0005】[0005]
【発明が解決しようとする課題】本発明はこのような従
来技術の問題点を解消し、ポリオレフィン系樹脂を誘電
体層として含み、ポリオレフィン系樹脂の持つ超低誘電
率及び超低誘電損失という優れた特長を維持しつつ接着
性及び耐熱性に優れた誘電体基板を提供することをその
課題とする。SUMMARY OF THE INVENTION The present invention solves the above problems of the prior art and includes a polyolefin resin as a dielectric layer, and is excellent in the ultra low dielectric constant and ultra low dielectric loss of the polyolefin resin. It is an object of the present invention to provide a dielectric substrate having excellent adhesiveness and heat resistance while maintaining the above features.
【0006】[0006]
【課題を解決するための手段】本発明者らは、前記課題
を解決すべく鋭意研究を重ねた結果、本発明を完成する
に至った。即ち、本発明によれば、ポリオレフィン系樹
脂シートの少なくとも片面に多孔質ふっ素樹脂フィルム
をラミネートしてなる誘電体基板が提供される。また、
本発明によれば、ポリオレフィン系樹脂シートの少なく
とも片面に多孔質ふっ素樹脂フィルムをラミネートし、
さらに該多孔質ふっ素樹脂フィルム表面に導電体層を設
けてなる誘電体基板が提供される。The present inventors have completed the present invention as a result of intensive studies to solve the above problems. That is, according to the present invention, there is provided a dielectric substrate obtained by laminating a porous fluororesin film on at least one surface of a polyolefin resin sheet. Also,
According to the present invention, a porous fluororesin film is laminated on at least one surface of a polyolefin resin sheet,
Further, there is provided a dielectric substrate having a conductor layer provided on the surface of the porous fluororesin film.
【0007】以下本発明の誘電体基板について詳述す
る。本発明の誘電体基板は、ポリオレフィン系樹脂シー
トの少なくとも片面に多孔質ふっ素樹脂フィルムをラミ
ネートして構成される。The dielectric substrate of the present invention will be described in detail below. The dielectric substrate of the present invention is constituted by laminating a porous fluororesin film on at least one surface of a polyolefin resin sheet.
【0008】本発明で用いるポリオレフィン系樹脂シー
トとしては、ポリエチレン又はポリプロピレンの充実体
及び織布、不織布、発泡材等の公知の多孔質体が使用可
能である。ポリオレフィン系樹脂シートの厚さは20μ
m〜4mm、好ましくは50μm〜2mmである。多孔
質構造のポリオレフィン系樹脂シートを用いる場合に
は、織布、不織布の場合、目付:1〜100g/m2、
好ましくは10〜30g/m2、織布、不織布の厚さ:
10μm〜2mm、好ましくは50μm〜0.2mmで
ある。発泡材の場合は、発泡倍率:2〜100倍、好ま
しくは5〜40倍、発泡材の厚さ:0.5〜6mm、好
ましくは2〜3mmである。As the polyolefin resin sheet used in the present invention, a solid body of polyethylene or polypropylene and a known porous body such as woven cloth, non-woven cloth and foam material can be used. The thickness of the polyolefin resin sheet is 20μ
m to 4 mm, preferably 50 μm to 2 mm. When using a polyolefin-based resin sheet having a porous structure, in the case of a woven fabric or a non-woven fabric, a basis weight: 1 to 100 g / m 2 ,
Preferably 10-30 g / m 2 , thickness of woven or non-woven fabric:
It is 10 μm to 2 mm, preferably 50 μm to 0.2 mm. In the case of a foam material, the expansion ratio is 2 to 100 times, preferably 5 to 40 times, and the thickness of the foam material is 0.5 to 6 mm, preferably 2 to 3 mm.
【0009】本発明で用いる多孔質ふっ素樹脂は、従来
公知のものであり、その好ましい樹脂はポリテトラフル
オロエチレン(PTFE)であるが、その他、テトラフ
ルオロエチレン/ヘキサフルオロプロピレン共重合体
(FEP)、ポリふっ化ビニル、ポリふっ化ビニリデン
等も使用し得る。The porous fluororesin used in the present invention is a conventionally known one, and its preferred resin is polytetrafluoroethylene (PTFE), but other than that, tetrafluoroethylene / hexafluoropropylene copolymer (FEP) is used. , Polyvinyl fluoride, polyvinylidene fluoride and the like can also be used.
【0010】本発明で好ましく用いる多孔質ふっ素樹脂
は、テトラフルオロエチレンの延伸物からなり、平均細
孔直径:100μm以下、好ましくは10μm以下、空
孔率:98〜20%、好ましくは90〜50%を有する
ものである。このようなものについては、特公昭56−
45773号、特公昭56−17216号、米国特許第
4187390号に詳述されている。多孔質ふっ素樹脂
シートの厚さは価格の観点から10〜100μmが好ま
しい。The porous fluororesin preferably used in the present invention comprises a stretched product of tetrafluoroethylene and has an average pore diameter of 100 μm or less, preferably 10 μm or less and a porosity of 98 to 20%, preferably 90 to 50. %. About such things, Japanese Patent Publication Sho 56-
No. 45773, Japanese Patent Publication No. 56-17216, and U.S. Pat. No. 4,187,390. The thickness of the porous fluororesin sheet is preferably 10 to 100 μm from the viewpoint of cost.
【0011】ポリオレフィン系樹脂シート材と多孔質ふ
っ素樹脂フィルムとのラミネートは、熱ロールで両者を
熱融着する方法、ポリオレフィン系樹脂シート表面を加
熱し溶かした状態で多孔質ふっ素樹脂フィルムと接着さ
せるフレームボンディング法等により行うことができ
る。いずれのラミネート方法でも、溶けたポリオレフィ
ン系樹脂材料が多孔質ふっ素樹脂材料の微細空孔の一部
に入り込み、機械的に強固な接着が可能となる。The lamination of the polyolefin resin sheet material and the porous fluororesin film is carried out by a method of heat-sealing the both with a heat roll, and the surface of the polyolefin resin sheet is heated and melted to adhere to the porous fluororesin film. It can be performed by a frame bonding method or the like. In any of the laminating methods, the melted polyolefin resin material enters into some of the fine pores of the porous fluororesin material, and mechanically strong adhesion becomes possible.
【0012】次に、本発明による別の誘電体基板につい
て述べる。この誘電体基板は上述の誘電体基板の多孔質
ふっ素樹脂フィルム表面に導電体層を設けて構成され
る。この場合、ポリオレフィン系樹脂シート及び多孔質
ふっ素樹脂フィルムについては上記の場合と同じ材料を
使用することができ、膜厚、必要特性、ラミネート方法
等も上記と同様とすることができる。Next, another dielectric substrate according to the present invention will be described. This dielectric substrate is formed by providing a conductor layer on the surface of the porous fluororesin film of the above-mentioned dielectric substrate. In this case, the same material as the above case can be used for the polyolefin resin sheet and the porous fluororesin film, and the film thickness, necessary characteristics, laminating method and the like can be the same as above.
【0013】多孔質ふっ素樹脂フィルム表面に設ける導
電体層の材料としては、金、銀、銅、アルミニウム、ニ
ッケル等の金属又はそれらの合金を用いることができ
る。多孔質ふっ素樹脂フィルムへの導電材料の付着方法
は、蒸着により付着させるか、接着剤を使用しないめっ
き方法(湿式、乾式)で付着させるのが電気特性の観点
から好ましい。As a material for the conductor layer provided on the surface of the porous fluororesin film, a metal such as gold, silver, copper, aluminum, nickel or an alloy thereof can be used. From the viewpoint of electrical characteristics, it is preferable to attach the conductive material to the porous fluororesin film by vapor deposition or by a plating method (wet or dry method) that does not use an adhesive.
【0014】導電体層を蒸着により形成する場合、従来
公知の蒸着法を用いることができるが、フィルム表面上
に均一な蒸着層を形成させるために、2個所の蒸着源を
用いて蒸着する方法や、フィルムと蒸着源を相対的に移
動させて蒸着する方法等により行うのが好ましい。ま
た、蒸着法は、イオンプレーティング、スパッタリング
の他、プラズマをかけながら蒸着を行う方法や、プラズ
マ処理を行った後に蒸着を行う方法等、従来公知の乾式
方法、物理的方法、気相法等による各種の粒子付着法を
包含する。When the conductive layer is formed by vapor deposition, a conventionally known vapor deposition method can be used. However, in order to form a uniform vapor deposition layer on the film surface, vapor deposition is performed using two vapor deposition sources. Alternatively, it is preferable to perform the vapor deposition by moving the film and the vapor deposition source relatively. Further, as the vapor deposition method, in addition to ion plating, sputtering, a method of performing vapor deposition while applying plasma, a method of performing vapor deposition after performing plasma treatment, and the like, conventionally known dry methods, physical methods, vapor phase methods, etc. Various particle attachment methods according to.
【0015】また、導電体層をめっき方法により形成す
る場合、従来公知のめっき方法を用いることができる
が、以下に述べる親水化工程と化学めっき工程とからな
るめっき方法を用いるのが特に好ましい。この方法につ
いて以下に詳述する。 (1)親水化工程 この工程は多孔質ふっ素樹脂フィルムの表面を、全面も
しくは所要パターン状に親水化する工程である。親水化
方法としては、多孔質ふっ素樹脂フィルムの表面を親水
化し得る方法であれば任意の方法を採用し得るが、好ま
しくは、親水基を有する各種の親水性高分子を付着結合
させる。この場合、親水基としては、ヒドロキシル基、
カルボキシル基、スルホン基、シアノ基、ピロリドン
基、イソシアネート基、イミダゾール基、リン酸基、N
−置換されていてもよいアミド基、N−置換されていて
もよいアミノ基、スルホンアミド基等を挙げることがで
きる。また、それらの親水基の活性水素には、アルキレ
ンオキシド、例えばエチレンオキシドやプロピレンオキ
シドが付加反応されていてもよい。Further, when the conductor layer is formed by a plating method, a conventionally known plating method can be used, but it is particularly preferable to use a plating method comprising a hydrophilization step and a chemical plating step described below. This method will be described in detail below. (1) Hydrophilization step This step is a step of hydrophilizing the surface of the porous fluororesin film over the entire surface or in a required pattern. As a method for hydrophilizing, any method can be adopted as long as it can hydrophilize the surface of the porous fluororesin film, but preferably various hydrophilic polymers having a hydrophilic group are attached and bonded. In this case, the hydrophilic group is a hydroxyl group,
Carboxyl group, sulfone group, cyano group, pyrrolidone group, isocyanate group, imidazole group, phosphoric acid group, N
There may be mentioned an amide group which may be substituted, an amino group which may be N-substituted, a sulfonamide group and the like. In addition, alkylene oxide such as ethylene oxide or propylene oxide may be added to the active hydrogen of the hydrophilic group.
【0016】親水性高分子としては、有機溶媒には可溶
性を示し、水又は水溶液に対しては、幾分の可溶性を示
すもの、好ましくは実質的に水不溶性を示すものの使用
が好ましい。また、耐熱性、耐アルカリ性及び耐酸性に
関しては、めっき液の温度及びpHに耐えるものが好ま
しい。このような親水性高分子としては、ポリビニルア
ルコール、ポリアクリル酸、ポリアクリロニトリル、ポ
リビニルスルホン、ポリウレタン、ポリエチレンオキシ
ド、でん粉、カルボキシルメチルセルロース、エチルセ
ルロース、アルギン酸ソーダ、グルテン、コラーゲン、
カゼイン等の親水性を有する各種の合成及び天然高分子
が使用可能であるが、特に多孔質ふっ素樹脂に対する付
着結合性の点から、含ふっ素親水性高分子の使用が有利
である。このような含ふっ素親水性高分子は、ふっ素含
有エチレン性不飽和モノマーと、ふっ素を含まない親水
基含有ビニルモノマーを共重合化させることにより得る
ことができる。ふっ素含有モノマーとしては、例えば、
テトラフルオロエチレン、フッ化ビニル、フッ化ビニリ
デン、モノクロロトリフルオロエチレン、ジクロロジフ
ルオロエチレン、ヘキサフルオロプロピレン等が挙げら
れる。一方、親水基含有モノマーとしては、前記した各
種の親水基を有するビニルモノマー及びそれらの親水基
の活性水素にアルキレンオキシド、例えばエチレンオキ
シドやプロピレンオキシドを付加反応させたモノマーも
好適のものである。酢酸ビニルのように、共重合化後、
加水分解することにより親水基含有コポリマーを与える
ものも使用される。As the hydrophilic polymer, it is preferable to use a hydrophilic polymer which is soluble in an organic solvent and somewhat soluble in water or an aqueous solution, preferably substantially water-insoluble. Further, with respect to heat resistance, alkali resistance and acid resistance, those which can withstand the temperature and pH of the plating solution are preferable. Such hydrophilic polymers include polyvinyl alcohol, polyacrylic acid, polyacrylonitrile, polyvinyl sulfone, polyurethane, polyethylene oxide, starch, carboxymethyl cellulose, ethyl cellulose, sodium alginate, gluten, collagen,
Although various synthetic and natural polymers having hydrophilicity such as casein can be used, the use of fluorine-containing hydrophilic polymer is particularly advantageous from the viewpoint of adhesive bond to porous fluororesin. Such a fluorine-containing hydrophilic polymer can be obtained by copolymerizing a fluorine-containing ethylenically unsaturated monomer and a fluorine-free hydrophilic group-containing vinyl monomer. As the fluorine-containing monomer, for example,
Tetrafluoroethylene, vinyl fluoride, vinylidene fluoride, monochlorotrifluoroethylene, dichlorodifluoroethylene, hexafluoropropylene and the like can be mentioned. On the other hand, as the hydrophilic group-containing monomer, vinyl monomers having various hydrophilic groups described above and monomers obtained by addition-reacting alkylene oxide, such as ethylene oxide or propylene oxide, with active hydrogen of the hydrophilic groups are also preferable. After copolymerization, like vinyl acetate,
Those which give a hydrophilic group-containing copolymer by hydrolysis are also used.
【0017】親水性モノマーの具体例としては、ビニル
アルコール、アクリル酸、メタクリル酸、フマル酸、マ
レイン酸、イタコン酸のような不飽和カルボン酸の他、
アクリル酸やメタクリル酸のアルキレンオキシド付加体
が挙げられる。Specific examples of the hydrophilic monomer include unsaturated alcohols such as vinyl alcohol, acrylic acid, methacrylic acid, fumaric acid, maleic acid and itaconic acid,
Examples thereof include alkylene oxide adducts of acrylic acid and methacrylic acid.
【0018】本発明において好ましく使用される含ふっ
素親水性コポリマーのふっ素含有率は、重量基準で、通
常2%〜60%、好ましくは10%〜60%、更に好ま
しくは20%〜60%である。含ふっ素親水性コポリマ
ーのフッ素含有率が多すぎると、耐熱性、電気特性は良
くなるもののポリマーの親水性が低下する。一方、フッ
素含有率が少なすぎると含ふっ素親水性コポリマーの材
料に対する接着性が小さくなり、耐熱性も小さくなる。The fluorine content of the fluorine-containing hydrophilic copolymer preferably used in the present invention is usually 2% to 60%, preferably 10% to 60%, more preferably 20% to 60% on a weight basis. . When the fluorine content of the fluorine-containing hydrophilic copolymer is too high, the heat resistance and electric characteristics are improved, but the hydrophilicity of the polymer is lowered. On the other hand, if the fluorine content is too low, the adhesiveness of the fluorine-containing hydrophilic copolymer to the material will be low, and the heat resistance will also be low.
【0019】本発明で好ましく用いる含ふっ素親水性コ
ポリマーにおいて、その親水基当量は、一般に、45〜
700、好ましくは60〜500、更に好ましくは60
〜450である。In the fluorine-containing hydrophilic copolymer preferably used in the present invention, the hydrophilic group equivalent is generally 45 to
700, preferably 60-500, more preferably 60
~ 450.
【0020】多孔質ふっ素樹脂フィルムの表面に親水性
高分子を付着結合させるためには、例えば含ふっ素親水
性コポリマーを、アルコール、ケトン、エステル、アミ
ドあるいは炭化水素のような有機溶媒中に溶解し、その
溶液をスプレー又はローラーを用いたコーティング法に
より多孔質ふっ素樹脂フィルムの表面にその溶液を塗布
した後、乾燥させる。このようにして、多孔質ふっ素樹
脂フィルムの外表面を親水性表面に形成することができ
る。In order to attach the hydrophilic polymer to the surface of the porous fluororesin film by adhesive bonding, for example, a fluorine-containing hydrophilic copolymer is dissolved in an organic solvent such as alcohol, ketone, ester, amide or hydrocarbon. The solution is applied to the surface of the porous fluororesin film by a coating method using a spray or a roller, and then dried. In this way, the outer surface of the porous fluororesin film can be formed into a hydrophilic surface.
【0021】(2)化学めっき工程 この工程は、前記のようにして多孔質ふっ素樹脂フィル
ム上に全面もしくは所要パターン状に形成された親水化
部分に化学めっき用の予備処理を施した後、化学めっき
処理を行う工程である。これらの予備処理及び化学めっ
き処理の各工程は、従来公知の方法に従って行えばよ
い。即ち、予備処理工程においては、材料の細孔内表面
に、化学めっきの触媒となる貴金属を付着させる。貴金
属としては、パラジウムや、白金、金等が用いられる
が、好ましくはパラジウムである。この貴金属の付着方
法としては、例えば、その親水化表面部に塩化スズ(I
I)の水溶液を接触させた後、水洗し、塩化パラジウム
水溶液を接触させ、次いで水洗する方法を採用すること
ができる。このような化学めっき用の予備処理はよく知
られている技術である。(2) Chemical plating step In this step, the hydrophilic portion formed on the entire surface of the porous fluororesin film as described above or in the required pattern is subjected to a pretreatment for chemical plating, followed by chemical treatment. This is a step of performing a plating process. Each step of these pretreatment and chemical plating treatment may be performed according to a conventionally known method. That is, in the pretreatment step, a noble metal serving as a catalyst for chemical plating is attached to the inner surface of the pores of the material. As the noble metal, palladium, platinum, gold or the like is used, but palladium is preferable. As a method of attaching the noble metal, for example, tin chloride (I
A method of contacting with the aqueous solution of I), followed by washing with water, contacting with an aqueous solution of palladium chloride, and then washing with water can be employed. Such pretreatment for chemical plating is a well known technique.
【0022】次に、前記のようにして化学めっき用の予
備処理を行った多孔質ふっ素樹脂フィルムは、これを化
学めっき液中に浸漬して化学めっき処理を施す。化学め
っき液は、一般的には、金属、還元剤、錯化剤、緩衝
剤、安定剤等を含む。この場合、還元剤としては、次亜
リン酸ナトリウム、水素化ほう素ナトリウム、アミンボ
ラン、ホルマリン、ヒドラジン等が採用され、錯化剤や
緩衝剤としては、ギ酸、酢酸、コハク酸、クエン酸、酒
石酸、リンゴ酸、グリシン、エチレンジアミン、EDT
A、トリエタノールアミン、酒石酸ナトリウム・カリウ
ムなどが採用される。めっき用金属としては、例えば、
銅、金、銀、白金、ロジウム、ニッケル、コバルト、タ
ングステン、亜鉛、鉄等の各種の金属や、それらの合金
例えば半田を挙げることができる。合金の金属膜を得る
場合には、めっき液に添加する金属塩として、所望する
合金膜に対応する成分組成の金属塩を用いればよい。Next, the porous fluororesin film that has been pretreated for chemical plating as described above is immersed in a chemical plating solution for chemical plating. The chemical plating solution generally contains a metal, a reducing agent, a complexing agent, a buffer, a stabilizer and the like. In this case, as the reducing agent, sodium hypophosphite, sodium borohydride, amine borane, formalin, hydrazine and the like are adopted, and as the complexing agent and buffering agent, formic acid, acetic acid, succinic acid, citric acid, tartaric acid. , Malic acid, glycine, ethylenediamine, EDT
A, triethanolamine, sodium / potassium tartrate, etc. are adopted. As the plating metal, for example,
Various metals such as copper, gold, silver, platinum, rhodium, nickel, cobalt, tungsten, zinc, iron and alloys thereof such as solder can be used. When obtaining a metal film of an alloy, a metal salt having a component composition corresponding to a desired alloy film may be used as the metal salt added to the plating solution.
【0023】多孔質ふっ素樹脂フィルム表面に対して白
金や金、それらの合金からなる金属膜あるいはその他の
化学めっきにより形成させるのが困難な金属膜を得るに
は、その樹脂フィルム上に、コバルトやニッケル、銅等
の化学めっきにより容易に形成し得る金属膜をあらかじ
め形成し、次いでこれに対して化学めっき処理や電気め
っき処理を行うのが好ましい。導電体層パターンの形成
方法は、全面に金属膜を成長させて、所望パターンにエ
ッチングする方法、所望パターン状に選択的に金属膜を
成長させる公知のアディティブ法等を採用することがで
きる。このようにして、多孔質ふっ素樹脂フィルムの表
面に回路ないし高周波線路を有する誘電体基板を得るこ
とができる。To obtain a metal film made of platinum, gold, or an alloy thereof, or any other metal film that is difficult to form by chemical plating on the surface of the porous fluororesin film, cobalt or cobalt is formed on the resin film. It is preferable to previously form a metal film which can be easily formed by chemical plating of nickel, copper or the like, and then subject this to chemical plating treatment or electroplating treatment. As a method of forming the conductor layer pattern, a method of growing a metal film on the entire surface and etching it into a desired pattern, a known additive method of selectively growing the metal film in a desired pattern, and the like can be adopted. In this way, a dielectric substrate having a circuit or a high frequency line on the surface of the porous fluororesin film can be obtained.
【0024】なお、多孔質ふっ素樹脂フィルム上に対す
る導電体層の形成は、ポリオレフィン系樹脂シート上に
ラミネートさせた多孔質ふっ素樹脂フィルムに対して行
ってもよく、あるいはポリオレフィン系樹脂シート上に
ラミネートさせる以前の多孔質ふっ素樹脂フィルムに対
して行ってもよい。The formation of the conductor layer on the porous fluororesin film may be performed on the porous fluororesin film laminated on the polyolefin resin sheet, or on the polyolefin resin sheet. It may be performed on the former porous fluororesin film.
【0025】本発明による誘電体基板は、一般のプリン
ト配線基板やフレキシブル基板として有利に使用され
る。プリント配線基板として使用される場合には、ポリ
オレフィン系樹脂シートの裏面(多孔質ふっ素樹脂フィ
ルムがラミネートされている面と反対の面)に金属層を
設け、さらに多孔質ふっ素樹脂フィルム上に形成された
導電体層と該金属層との間を電気的に接続させる必要が
ある。このためには、従来と同様に、スルーホールを作
りその内壁面に金属めっき層を形成する方式や、スルー
ホール内に金属棒を挿入する方式、スルーホール内に導
電性ペーストを埋設する方式等が採用される。The dielectric substrate according to the present invention is advantageously used as a general printed wiring board or flexible board. When used as a printed wiring board, a metal layer is provided on the back surface of the polyolefin-based resin sheet (the surface opposite to the surface on which the porous fluororesin film is laminated) and then formed on the porous fluororesin film. It is necessary to electrically connect the conductive layer and the metal layer. For this purpose, a method of forming a through hole and forming a metal plating layer on the inner wall surface, a method of inserting a metal rod into the through hole, a method of embedding a conductive paste in the through hole, etc. Is adopted.
【0026】本発明による誘電体基板は、高周波用途に
おいても好ましく使用される。即ち、マイクロストリッ
プラインを用いる両面基板、フラットケーブル等として
好ましく使用されるが、たとえばストリップライン構造
とするために2つの基板を積層して使用することもでき
る。基板の積層は、例えばポリプロピレンとポリエチレ
ンのように融点の異なる基材を用いて、融点の低いポリ
エチレンを熱溶融させて接着剤として用いると容易に積
層することができる。The dielectric substrate according to the present invention is also preferably used in high frequency applications. That is, it is preferably used as a double-sided board using a microstrip line, a flat cable, or the like, but it is also possible to stack and use two boards to have a stripline structure, for example. The substrates can be easily laminated by using base materials having different melting points such as polypropylene and polyethylene, and heat-melting polyethylene having a low melting point to use as an adhesive.
【0027】[0027]
【発明の効果】本発明において、ポリオレフィン系樹脂
シートの少なくとも片面にポリオレフィン樹脂フィルム
をラミネートした誘電体基板は、以下のような利点を有
する。 (1)多孔質ふっ素樹脂フィルムがラミネートされている
ので、誘電率の増加が抑制され、ポリオレフィン系樹脂
の有する非常に低い誘電率及び誘電損失を維持した基板
が安価に提供できる。 (2)多孔質ふっ素樹脂フィルム面に導電体膜を接着剤を
使用しないで強固に付着させることができる。 (3)耐熱性があり断熱効果の高い多孔質ふっ素樹脂シー
トが表面にラミネートされているため短期耐熱性が向上
する。 (4)基板同士をポリオレフィン系樹脂材料を接着剤とし
て接合できるので、積層体とすることができる。INDUSTRIAL APPLICABILITY In the present invention, the dielectric substrate in which a polyolefin resin film is laminated on at least one side of a polyolefin resin sheet has the following advantages. (1) Since the porous fluororesin film is laminated, an increase in the dielectric constant is suppressed, and a substrate that maintains the extremely low dielectric constant and dielectric loss of the polyolefin resin can be provided at low cost. (2) The conductor film can be firmly attached to the surface of the porous fluororesin film without using an adhesive. (3) Short-term heat resistance is improved because a porous fluororesin sheet having heat resistance and high heat insulation effect is laminated on the surface. (4) Since the substrates can be bonded to each other by using a polyolefin resin material as an adhesive, a laminate can be formed.
【0028】このような誘電体基板はその表面に導電体
層を形成する中間材料として使用される。Such a dielectric substrate is used as an intermediate material for forming a conductor layer on its surface.
【0029】本発明において、多孔質ふっ素樹脂フィル
ムの表面に導電体層を有するものは、一般の回路基板や
フレキシブル基板として使用可能であるが、それ以外に
も例えば次のような高周波用途の基板等或いはその中間
材料として好ましく使用することができる。 (1)BS用等の平面アンテナの誘電体基板或いは誘電体
フィルム (2)フレキシブル高周波基板 (3)マイクロストリップ線路、ストリップ線路、グラン
ド付きコプレーナ線路等の高周波線路を有する基板、フ
ラットケーブル (4)同軸線の誘電体In the present invention, a porous fluororesin film having a conductor layer on its surface can be used as a general circuit board or a flexible board. Etc. or an intermediate material thereof can be preferably used. (1) Dielectric substrate or film of planar antenna for BS etc. (2) Flexible high frequency substrate (3) Micro strip line, strip line, substrate having high frequency line such as coplanar line with ground, flat cable (4) Coaxial wire dielectric
【0030】[0030]
【実施例】次に本発明の実施例を述べるが、本発明はこ
れら実施例に限定されるものではない。EXAMPLES Next, examples of the present invention will be described, but the present invention is not limited to these examples.
【0031】実施例1 100μm厚のポリプロピレンフィルムの両面に、厚さ
40μm、空孔率80%、平均細孔直径0.2μmの多
孔質ポリテトラフルオロエチレンフィルム(ジャパンゴ
アテックス社製)を、180℃の熱ロールを用い速度2
m/minでラミネートして基板を作成した。Example 1 A porous polytetrafluoroethylene film (manufactured by Japan GORE-TEX Co., Ltd.) having a thickness of 40 μm, a porosity of 80% and an average pore diameter of 0.2 μm was formed on both sides of a polypropylene film having a thickness of 100 μm. Speed 2 using a heat roll at ℃
A substrate was prepared by laminating at m / min.
【0032】実施例2 実施例1で作成した基板の両面に、テトラフルオロエチ
レン/ビニルアルコール共重合体を0.3wt%含むメ
タノール溶液をコーティングした後、100℃で2分間
乾燥させて、多孔質ポリテトラフルオロエチレンフィル
ム表面のみを親水化させた。そして、これに対して公知
の方法を用いて、厚さ10μmの無電解メッキを施した
銅張り基板を作成した。この基板の比誘電率は2.1、
誘電損失は0.0002であった(1MHzで測定)。
銅箔引きはがし強さは2kgf/cmであった。Example 2 Both sides of the substrate prepared in Example 1 were coated with a methanol solution containing 0.3 wt% of a tetrafluoroethylene / vinyl alcohol copolymer and then dried at 100 ° C. for 2 minutes to give a porous film. Only the surface of the polytetrafluoroethylene film was made hydrophilic. Then, a known method was used to prepare a copper-clad substrate having a thickness of 10 μm and subjected to electroless plating. The relative permittivity of this substrate is 2.1,
The dielectric loss was 0.0002 (measured at 1 MHz).
The copper foil peeling strength was 2 kgf / cm.
【0033】実施例3 厚さ2mm、発泡倍率10倍の電子線架橋発泡ポリエチ
レンの両面に、厚さ40μm、空孔率80%、平均細孔
直径0.2μmの多孔質ポリテトラフルオロエチレンフ
ィルム(ジャパンゴアテックス社製)をフレームボンデ
ィング法でラミネートし、基板を作成した。この基板の
両面に、実施例2と同様にして厚さ10μmの無電解め
っきを施し、銅張り基板を作成した。この基板の比誘電
率は1.1、誘電損失は0.0002であった(1MH
zで測定)。銅箔引きはがし強さは1.5kgf/cm
であった。Example 3 A porous polytetrafluoroethylene film having a thickness of 40 mm, a porosity of 80% and an average pore diameter of 0.2 μm was formed on both sides of an electron beam cross-linked foamed polyethylene having a thickness of 2 mm and a foaming ratio of 10 times. (Japan GORE-TEX Co., Ltd.) was laminated by a frame bonding method to prepare a substrate. Both sides of this substrate were subjected to electroless plating with a thickness of 10 μm in the same manner as in Example 2 to prepare a copper-clad substrate. The relative permittivity of this substrate was 1.1 and the dielectric loss was 0.0002 (1 MH
z). Copper foil peeling strength is 1.5kgf / cm
Met.
【0034】実施例4 実施例2で作成した銅張り基板を、パターンエッチング
して銅回路を形成した。この基板を2枚作成し、図1の
通り両基板間に厚さ30μmのポリエチレンフィルムを
介在させ、温度130℃、圧力5kg/cm2の熱プレ
スで5分間プレスしてストリップライン構造の積層板を
作成した。Example 4 The copper-clad substrate prepared in Example 2 was pattern-etched to form a copper circuit. As shown in FIG. 1, a two-layered substrate having a thickness of 30 μm and a polyethylene film interposed between the two substrates was pressed by a hot press at a temperature of 130 ° C. and a pressure of 5 kg / cm 2 for 5 minutes to form a stripline laminated plate. It was created.
【図1】実施例4において作成したストリップライン構
造の積層板の説明図である。FIG. 1 is an explanatory diagram of a stripline laminated plate prepared in Example 4;
1、1′ 基板 2、2′、3 銅 4 ポリエチレンフィルム 1, 1'substrate 2, 2 ', 3 copper 4 polyethylene film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 浦上 明 東京都世田谷区赤堤1丁目42番5号 ジャ パンゴアテックス株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akira Urakami 1-42-5-5 Akakutsumi, Setagaya-ku, Tokyo Inside Japan Gore-Tex Co., Ltd.
Claims (5)
も片面に多孔質ふっ素樹脂フィルムをラミネートしてな
る誘電体基板。1. A dielectric substrate formed by laminating a porous fluororesin film on at least one surface of a polyolefin resin sheet.
も片面に多孔質ふっ素樹脂フィルムをラミネートし、さ
らに該多孔質ふっ素樹脂フィルム表面に導電体層を設け
てなる誘電体基板。2. A dielectric substrate obtained by laminating a porous fluororesin film on at least one surface of a polyolefin resin sheet, and further providing a conductor layer on the surface of the porous fluororesin film.
誘電体基板。3. The dielectric substrate of claim 2, wherein the conductor layer forms a circuit.
造をしている請求項1〜3のいずれかの誘電体基板。4. The dielectric substrate according to claim 1, wherein the polyolefin resin sheet has a porous structure.
はポリプロピレンである請求項1〜4のいずれかの誘電
体基板。5. The dielectric substrate according to claim 1, wherein the polyolefin resin is polyethylene or polypropylene.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3123093A JPH06224526A (en) | 1993-01-27 | 1993-01-27 | Dielectric substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3123093A JPH06224526A (en) | 1993-01-27 | 1993-01-27 | Dielectric substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06224526A true JPH06224526A (en) | 1994-08-12 |
Family
ID=12325619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3123093A Pending JPH06224526A (en) | 1993-01-27 | 1993-01-27 | Dielectric substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06224526A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005049318A1 (en) * | 2003-11-19 | 2005-06-02 | Tonen Chemical Corporation | Composite microporous film, and production method and use thereof |
JP2012033752A (en) * | 2010-07-30 | 2012-02-16 | Nitto Denko Corp | Wiring circuit board and method of manufacturing the same |
-
1993
- 1993-01-27 JP JP3123093A patent/JPH06224526A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005049318A1 (en) * | 2003-11-19 | 2005-06-02 | Tonen Chemical Corporation | Composite microporous film, and production method and use thereof |
JPWO2005049318A1 (en) * | 2003-11-19 | 2007-06-07 | 東燃化学株式会社 | Composite microporous membrane, production method and use thereof |
US7781094B2 (en) | 2003-11-19 | 2010-08-24 | Tonen Chemical Corporation | Microporous composite membrane and its production method and use |
JP5057419B2 (en) * | 2003-11-19 | 2012-10-24 | 東レバッテリーセパレータフィルム株式会社 | Composite microporous membrane, production method and use thereof |
JP2012033752A (en) * | 2010-07-30 | 2012-02-16 | Nitto Denko Corp | Wiring circuit board and method of manufacturing the same |
US9288903B2 (en) | 2010-07-30 | 2016-03-15 | Nitto Denko Corporation | Printed circuit board and method of manufacturing the same |
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