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JPH06224326A - Radiator and semiconductor package using this radiator - Google Patents

Radiator and semiconductor package using this radiator

Info

Publication number
JPH06224326A
JPH06224326A JP2746493A JP2746493A JPH06224326A JP H06224326 A JPH06224326 A JP H06224326A JP 2746493 A JP2746493 A JP 2746493A JP 2746493 A JP2746493 A JP 2746493A JP H06224326 A JPH06224326 A JP H06224326A
Authority
JP
Japan
Prior art keywords
radiator
semiconductor package
semiconductor element
resin
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2746493A
Other languages
Japanese (ja)
Inventor
Yoji Kawakami
洋司 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP2746493A priority Critical patent/JPH06224326A/en
Publication of JPH06224326A publication Critical patent/JPH06224326A/en
Withdrawn legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To make it possible to enhance heat emission properties without damaging the molding performance and further reduction in a thin wall of a package. CONSTITUTION:In a semiconductor package 50 which uses a film carrier 30 resin-sealed with a die, a semiconductor element 1 is loaded on the film carrier 30 which comprises a film base material 3 and a pattern-formed lead 2. The semiconductor element 1 is loaded on a radiation board 6 of a radiator 5 which comprises the radiating board 6 and a plurality of legs 7 and sealed with resin 4 where between a radiating surface 6b of he radiating board 6 and the ends 7a of the legs 7 are exposed the radiating surface of the radiating board 6 and the ends 7a of the legs 7 having a similar height with the semiconductor package from both sides of the semiconductor package 50.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体素子が発生する
熱を放熱する放熱器及びこの放熱器を用いた半導体パッ
ケージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiator for radiating heat generated by a semiconductor element and a semiconductor package using this radiator.

【0002】[0002]

【従来の技術】従来、この種の半導体パッケージとし
て、例えば図9に示すように、フィルム基材3のリード
2にボンディングされた半導体素子1を金属板60上に
搭載し、上型と下型とからなる金型(図示せず)で挟持
して、樹脂4により樹脂封止を行った半導体パッケージ
50があった。
2. Description of the Related Art Conventionally, as a semiconductor package of this type, a semiconductor element 1 bonded to a lead 2 of a film substrate 3 is mounted on a metal plate 60 as shown in FIG. There is a semiconductor package 50 which is sandwiched by a mold (not shown) composed of and is resin-sealed with the resin 4.

【0003】また、特開平2−63143号に記載され
ているように、放熱キャップを形成し、このキャップの
フランジ部をキャリアテープに密着させて、キャップの
放熱フィン部をパッケージより露出させる構造をとった
ものがあった。
Further, as described in Japanese Patent Application Laid-Open No. 2-63143, a heat dissipation cap is formed, and a flange portion of the cap is brought into close contact with a carrier tape to expose the heat dissipation fin portion of the cap from the package. There was something I took.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、図9に
示したような従来の金属板60を用いて樹脂封止を行う
場合、樹脂4の圧力によりパッケージ50の底面に樹脂
4が回り込み、金属板60が浮いてしまいパッケージ5
0の底面に露出できなくなってしまう。このように金属
板60の露出面に樹脂4が回り込むと、半導体素子1が
発生する熱の放熱性が極めて悪くなるという問題があっ
た。しかも、パッケージ50を基板に実装する際には、
基板と金属板60との間に樹脂4が介在するため、基板
への熱伝導性及び電気伝導性が悪くなり、放熱性と電気
的安定性とが著しく悪くなる。さらに、樹脂4が金属板
60の露出面に回り込むと、パッケージ50の見栄えが
悪くなるという問題もあった。
However, when the conventional metal plate 60 as shown in FIG. 9 is used to perform resin sealing, the pressure of the resin 4 causes the resin 4 to wrap around the bottom surface of the package 50 and the metal plate. 60 floats and package 5
It cannot be exposed on the bottom of 0. When the resin 4 wraps around the exposed surface of the metal plate 60 as described above, there is a problem in that the heat radiation performance of the heat generated by the semiconductor element 1 is extremely deteriorated. Moreover, when mounting the package 50 on the substrate,
Since the resin 4 is interposed between the substrate and the metal plate 60, the thermal conductivity and the electrical conductivity to the substrate are deteriorated, and the heat dissipation and the electrical stability are significantly deteriorated. Further, if the resin 4 wraps around the exposed surface of the metal plate 60, the appearance of the package 50 may deteriorate.

【0005】ところで、パッケージサイズが薄くなる
と、樹脂封止のための樹脂の流動性は、パッケージの高
さが薄くなればなるほど、パッケージの薄さに比例して
樹脂の抵抗が大きくなり、流動性が悪くなる。樹脂の流
動性が悪くなると、金型内で樹脂は充填せずに固化し、
樹脂封止ができなくなる。特に、前記公知例のように、
放熱キャップによって半導体素子を囲む構造において
は、その放熱キャップによって樹脂の流動が著しく阻害
されてしまう。このため、パッケージの成型不良により
歩留りが大幅に悪くなるとともに、パッケージの薄型化
が極めて困難になるという問題があった。
By the way, when the package size becomes thin, the fluidity of the resin for resin encapsulation becomes larger as the height of the package becomes thinner, and the resistance of the resin becomes larger in proportion to the thinness of the package. Becomes worse. When the fluidity of the resin deteriorates, it solidifies without filling the resin in the mold,
The resin cannot be sealed. In particular, as in the above-mentioned known example,
In the structure in which the semiconductor element is surrounded by the heat dissipation cap, the heat dissipation cap significantly impedes the flow of the resin. Therefore, there is a problem that the yield is significantly deteriorated due to defective molding of the package and it is extremely difficult to make the package thin.

【0006】そこで本発明は、上記課題を解決するため
になされたもので、パッケージの成型性並びに薄型化を
損なうことなく放熱性を向上させることができる放熱器
及びこの放熱器を用いた半導体パッケージを提供するこ
とを目的とする。
Therefore, the present invention has been made in order to solve the above-mentioned problems, and it is a radiator that can improve the heat radiation without impairing the moldability and the thinness of the package, and a semiconductor package using this radiator. The purpose is to provide.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
に、本発明は、半導体パッケージ中に樹脂封止された半
導体素子が発生する熱を放熱する放熱器において、前記
半導体素子より大きい面積を有し前記半導体素子の裏面
を覆う放熱板に、前記半導体パッケージの厚みとほぼ同
じ高さを有する複数の脚部を互いに離間して設けたもの
である。
In order to solve the above problems, the present invention provides a radiator for radiating heat generated by a resin-sealed semiconductor element in a semiconductor package, which has a larger area than the semiconductor element. A heat dissipation plate that covers the back surface of the semiconductor element is provided with a plurality of leg portions that are substantially the same height as the thickness of the semiconductor package and are separated from each other.

【0008】また、本発明は、半導体パッケージ中に樹
脂封止された半導体素子が発生する熱を放熱する放熱器
において、前記半導体素子より大きい面積を有し前記半
導体素子の裏面を覆う放熱板に、高さが前記半導体パッ
ケージの厚みよりも高くかつ弾性を有する複数の脚部を
互いに離間して設けたものである。
Further, according to the present invention, in a radiator for radiating heat generated by a semiconductor element sealed in a semiconductor package with a resin, a radiator plate having an area larger than the semiconductor element and covering a back surface of the semiconductor element is provided. A plurality of leg portions having a height higher than the thickness of the semiconductor package and having elasticity are provided separately from each other.

【0009】さらに、本発明は、多数の導電性リードを
有する絶縁性フィルム基材に半導体素子を搭載して樹脂
封止を行った半導体パッケージにおいて、前記半導体素
子より大きい面積を有する放熱板と、この放熱板に互い
に離間して設けられた複数の脚部とからなる放熱器を備
え、前記放熱板の一方の面を前記半導体素子の裏面に接
触させかつ他方の面を前記半導体パッケージの一方の外
面に露出させるとともに、前記複数の脚部の端部を前記
半導体パッケージの他方の外面に露出させたものであ
る。
Further, according to the present invention, in a semiconductor package in which a semiconductor element is mounted on an insulating film substrate having a large number of conductive leads and resin-sealed, a heat dissipation plate having an area larger than that of the semiconductor element, A heat radiator comprising a plurality of legs provided apart from each other is provided on the heat radiation plate, one surface of the heat radiation plate is brought into contact with the back surface of the semiconductor element, and the other surface is provided on one side of the semiconductor package. In addition to being exposed to the outer surface, the end portions of the plurality of legs are exposed to the other outer surface of the semiconductor package.

【0010】なお、前記各構成において、前記脚部に切
欠部を設けるとよく、さらに、前記脚部は前記放熱板と
平行な支持面を有する端部を備えるとよい。
In each of the above constructions, the leg portion may be provided with a cutout portion, and further, the leg portion may be provided with an end portion having a supporting surface parallel to the heat dissipation plate.

【0011】[0011]

【作用】上記のように構成された本発明によれば、樹脂
封止を行う際に用いる上下の金型内で、一方の金型によ
り複数の脚部が押されることによって、放熱板の放熱側
の面が他方の金型に押し付けられるので、放熱板の放熱
面は金型に密着し、樹脂の圧力の影響を受けず、放熱板
の露出面への樹脂の回り込みを防止できる。このため、
半導体素子が発生する熱の放熱性が向上する。
According to the present invention having the above-described structure, one of the molds presses a plurality of legs in the upper and lower molds used for resin sealing, so that the heat dissipation of the heat dissipation plate is prevented. Since the side surface is pressed against the other die, the heat radiating surface of the heat radiating plate is in close contact with the die, is not affected by the pressure of the resin, and can prevent the resin from wrapping around the exposed surface of the heat radiating plate. For this reason,
The heat dissipation of the heat generated by the semiconductor element is improved.

【0012】また、複数の脚部に弾性を発揮させると、
金型に対する放熱板の密着性がより向上する。さらに、
脚部の端部に放熱板と平行な支持面を設けると、金型に
よる押し付けがより確実になるとともに、端部の支持面
からの放熱も可能となる。
Further, when the plurality of legs are made to exhibit elasticity,
The adhesion of the heat sink to the mold is further improved. further,
If a supporting surface parallel to the heat dissipation plate is provided at the end of the leg, the pressing by the mold becomes more reliable and heat can be dissipated from the supporting surface at the end.

【0013】しかも、複数の脚部が互いに離間して設け
られることによって、各脚部間は開放されており、さら
に、脚部に切欠部が設けられているので、樹脂封止の際
の樹脂の流動を妨げることなく、半導体パッケージの成
型を確実に行うことができる。
Moreover, since the plurality of leg portions are provided separately from each other, the space between the leg portions is opened, and the leg portions are provided with the cutout portions. The semiconductor package can be reliably molded without disturbing the flow of the semiconductor package.

【0014】[0014]

【実施例】本発明の第一実施例を図1〜図4を参照して
説明する。図1は半導体パッケージの断面図、図2は図
1の半導体パッケージのA−A線における断面図、図3
は半導体素子を載置した状態の放熱器の斜視図、図4は
放熱器の脚部の拡大斜視図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to FIGS. 1 is a sectional view of the semiconductor package, FIG. 2 is a sectional view of the semiconductor package taken along the line AA of FIG. 1, and FIG.
[Fig. 4] is a perspective view of a radiator with a semiconductor element mounted thereon, and Fig. 4 is an enlarged perspective view of legs of the radiator.

【0015】図1に示すように、この半導体パッケージ
50においては、絶縁性のフィルム基材3とこれにパタ
ーン形成されている多数の導電性のリード2とからなる
フィルムキャリア30が用いられ、このフィルムキャリ
ア30におけるデバイス孔10の内側に突出しているイ
ンナーリード2′に、半導体素子1がバンプ20を介し
てインナーリードボンディング工程により接続されてい
る。
As shown in FIG. 1, this semiconductor package 50 uses a film carrier 30 composed of an insulating film base material 3 and a large number of conductive leads 2 patterned on the insulating film base material 3. The semiconductor element 1 is connected to the inner lead 2 ′ protruding inside the device hole 10 in the film carrier 30 via the bump 20 by an inner lead bonding process.

【0016】そして、前記フィルムキャリア30に搭載
された前記半導体素子1が、放熱器5の放熱板6の吸熱
面6a上に載置されている。
The semiconductor element 1 mounted on the film carrier 30 is mounted on the heat absorption surface 6a of the heat dissipation plate 6 of the radiator 5.

【0017】ここで、図3に示すように、放熱器5は、
アルミニウムや銅などの熱伝導性の良い金属材料によっ
て一体的に形成されており、平面状の放熱板6と複数の
脚部7とからなるものである。
Here, as shown in FIG. 3, the radiator 5 is
It is integrally formed of a metal material having good thermal conductivity such as aluminum or copper, and is composed of a flat heat dissipation plate 6 and a plurality of legs 7.

【0018】前記放熱板6は半導体素子1の底面より大
きい面積を有し、その半導体素子1と放熱板6とは図2
に示すような大小関係となっている。
The heat dissipation plate 6 has a larger area than the bottom surface of the semiconductor element 1, and the semiconductor element 1 and the heat dissipation plate 6 are shown in FIG.
The relationship is as shown in.

【0019】図3に示すように、前記脚部7は放熱板6
を支持するように複数設けられており、各脚部7間は開
放されている。なお、本実施例では、この脚部7は放熱
板6の各コーナーに設けられている。そして、脚部7は
放熱板6に対して垂直より少し傾けられて(図1で∠θ
<90°)おり、弾性を有するように構成されている。
また、図4に示すように、脚部7は屈曲した端部7aを
備えており、この端部7aは放熱板6と平行な支持面7
bを有している。さらに、脚部7には切欠部7cが設け
られている。
As shown in FIG. 3, the leg portion 7 is provided with a heat radiating plate 6.
Are provided so as to support each of the legs 7 and each leg 7 is open. In this embodiment, the leg portions 7 are provided at each corner of the heat dissipation plate 6. Then, the leg portion 7 is slightly inclined with respect to the vertical direction with respect to the radiator plate 6 (∠θ in FIG. 1).
<90 °), and is configured to have elasticity.
Further, as shown in FIG. 4, the leg portion 7 has a bent end portion 7 a, and the end portion 7 a is parallel to the heat dissipation plate 6 and the supporting surface 7 is provided.
b. Further, the leg portion 7 is provided with a cutout portion 7c.

【0020】図1に示すように、前記放熱板6上に載置
された前記半導体素子1は、導電性及び放熱性を有する
接着剤8によって接着される。なお、接着剤8としては
銀ペースト等が用いられる。
As shown in FIG. 1, the semiconductor element 1 placed on the heat dissipation plate 6 is adhered by an adhesive 8 having electrical conductivity and heat dissipation. A silver paste or the like is used as the adhesive 8.

【0021】そして、半導体素子1を搭載したフィルム
キャリア30と放熱器5とは、上型と下型とからなる金
型(図示せず)によって挟持され、樹脂4によって封止
される。
The film carrier 30 having the semiconductor element 1 mounted thereon and the radiator 5 are sandwiched by a mold (not shown) consisting of an upper mold and a lower mold, and sealed with a resin 4.

【0022】ここで、樹脂4で封止する際、脚部7の端
部7aが上金型により押さえられることによって、放熱
板6の底面である放熱面6bは下金型に密着する。脚部
7を放熱板6に対して垂直より少し傾けているので、脚
部7は弾性を発揮して放熱板6の放熱面6bを下金型に
押し付けることができ、より金型との密着性が高まり、
放熱板6の放熱面6bと脚部7の端部7aの支持面7b
とが半導体パッケージ50の両面より露出する。そし
て、放熱器5は半導体パッケージ50とほぼ同じ高さh
を有することになる。
Here, at the time of sealing with the resin 4, the end portion 7a of the leg portion 7 is pressed by the upper die, so that the heat radiating surface 6b which is the bottom surface of the heat radiating plate 6 is brought into close contact with the lower die. Since the leg portion 7 is slightly tilted with respect to the heat radiating plate 6 from the vertical, the leg portion 7 exerts elasticity and the heat radiating surface 6b of the heat radiating plate 6 can be pressed against the lower mold, so that it is more closely attached to the mold. Will increase
The heat radiation surface 6b of the heat radiation plate 6 and the support surface 7b of the end portion 7a of the leg portion 7
And are exposed from both sides of the semiconductor package 50. Further, the radiator 5 has a height h substantially the same as that of the semiconductor package 50.
Will have.

【0023】上記のように構成された本実施例によれ
ば、放熱板6と脚部7の端部7aとが樹脂封止に用いら
れる金型に密着するので、放熱器5は半導体パッケージ
50と同じ高さになり、放熱板6は浮上せず、放熱板6
の放熱面6bへの樹脂4の回り込みを防止できる。そし
て、放熱板6の放熱面6bと脚部7の端部7aとが半導
体パッケージ50の両面より露出しているので、半導体
素子1が発生する熱を効率良く放熱することができる。
また、放熱器5が放熱板6と複数の脚部7とからなり、
各脚部7間は開放されているとともに、各脚部7は樹脂
4が通過可能な切欠部7cを有するので、樹脂封止の際
の樹脂4の流動性が向上し、樹脂4の未充填を防止でき
る。
According to the present embodiment configured as described above, the radiator plate 6 and the end portions 7a of the leg portions 7 are in close contact with the mold used for resin sealing, so that the radiator 5 is the semiconductor package 50. And the heat sink 6 does not float, and the heat sink 6
It is possible to prevent the resin 4 from wrapping around the heat radiation surface 6b. Since the heat dissipation surface 6b of the heat dissipation plate 6 and the ends 7a of the legs 7 are exposed from both surfaces of the semiconductor package 50, the heat generated by the semiconductor element 1 can be efficiently dissipated.
In addition, the radiator 5 is composed of a radiator plate 6 and a plurality of legs 7,
Since each leg 7 is open and each leg 7 has a cutout 7c through which the resin 4 can pass, the fluidity of the resin 4 at the time of resin sealing is improved and the resin 4 is not filled. Can be prevented.

【0024】次に、本発明の第二実施例を図5及び図6
を参照して説明する。図5は半導体パッケージの断面
図、図6は図5の半導体パッケージを金属板側から見た
ときの表面図である。なお、第一実施例と実質的に同一
の構成部分には同一の符号を付してその説明を省略す
る。
Next, a second embodiment of the present invention will be described with reference to FIGS.
Will be described with reference to. 5 is a sectional view of the semiconductor package, and FIG. 6 is a front view of the semiconductor package of FIG. 5 when viewed from the metal plate side. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

【0025】第二実施例は、上記第一実施例と同様に半
導体素子1をフィルムキャリア30に搭載した後、イン
ナーリードボンディングを行い、放熱器5の放熱板6上
に載置し、接着剤8を用いて放熱板6と半導体素子1と
を接着する。上記第一実施例と異なる点は、放熱器5の
脚部7の端部7a上に平面状の金属板9aを載置したこ
とである。そして、金属板9aを載置した後、樹脂4に
よる封止を行い、半導体パッケージ50が得られる。こ
こでも、脚部7が弾性を有しているので、放熱板6から
金属板9aまでの高さは、半導体パッケージ50の高さ
と同じに成型できる。
In the second embodiment, as in the first embodiment, the semiconductor element 1 is mounted on the film carrier 30, then inner lead bonding is performed, and the semiconductor element 1 is mounted on the heat dissipation plate 6 of the radiator 5, and an adhesive is applied. The heat sink 6 and the semiconductor element 1 are adhered to each other by using 8. The difference from the first embodiment is that a flat metal plate 9a is placed on the end 7a of the leg 7 of the radiator 5. Then, after mounting the metal plate 9a, sealing with the resin 4 is performed, and the semiconductor package 50 is obtained. Also here, since the leg portions 7 have elasticity, the height from the heat sink 6 to the metal plate 9a can be molded to be the same as the height of the semiconductor package 50.

【0026】上記のように構成された第二実施例によれ
ば、放熱板6と金属板9aとが樹脂封止に用いられる金
型に密着するので、放熱器5は半導体パッケージ50と
同じ高さになり、放熱板6は浮上せず、放熱板6の放熱
面6b及び金属板9aの上面への樹脂4の回り込みを防
止できる。そして、放熱板6の放熱面6bと金属板9a
とが半導体パッケージ50の両面より露出しているの
で、半導体素子1が発生する熱を効率良く放熱すること
ができる。また、放熱器5が放熱板6と複数の脚部7と
からなり、各脚部7間は開放されているとともに、各脚
部7は樹脂4が通過可能な切欠部7cを有するので、樹
脂封止の際の樹脂4の流動性が向上し、樹脂4の未充填
を防止できる。
According to the second embodiment constructed as described above, since the radiator plate 6 and the metal plate 9a are in close contact with the mold used for resin sealing, the radiator 5 has the same height as the semiconductor package 50. That is, the heat dissipation plate 6 does not float, and it is possible to prevent the resin 4 from flowing around the heat dissipation surface 6b of the heat dissipation plate 6 and the upper surface of the metal plate 9a. Then, the heat dissipation surface 6b of the heat dissipation plate 6 and the metal plate 9a
Since the and are exposed from both sides of the semiconductor package 50, the heat generated by the semiconductor element 1 can be efficiently dissipated. Further, since the radiator 5 is composed of the radiator plate 6 and the plurality of leg portions 7, the spaces between the leg portions 7 are open, and each leg portion 7 has the cutout portion 7c through which the resin 4 can pass, The fluidity of the resin 4 at the time of sealing is improved, and it is possible to prevent the resin 4 from being unfilled.

【0027】次に、本発明の第三実施例を図7及び図8
を参照して説明する。図7は半導体パッケージの断面
図、図8は図7の半導体パッケージを金属板側から見た
ときの表面図である。なお、第一実施例と実質的に同一
の構成部分には同一の符号を付してその説明を省略す
る。
Next, a third embodiment of the present invention will be described with reference to FIGS.
Will be described with reference to. 7 is a sectional view of the semiconductor package, and FIG. 8 is a front view of the semiconductor package of FIG. 7 when viewed from the metal plate side. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

【0028】第三実施例は、上記第二実施例と同様に半
導体素子1をフィルムキャリア30に搭載した後、イン
ナーリードボンディングを行い、放熱器5の放熱板6上
に載置し、接着剤8を用いて放熱板6と半導体素子1と
を接着する。上記第二実施例と異なる点は、放熱器5の
脚部7の端部7a上に中央部が開口した平面状の金属板
9bを載置したことである。金属板9bを載置した後、
樹脂4による封止を行い、半導体パッケージ50が得ら
れる。ここでも、脚部7が弾性を有しているので、放熱
板6から金属板9bまでの高さは、半導体パッケージ5
0の高さと同じに成型できる。
In the third embodiment, as in the second embodiment, the semiconductor element 1 is mounted on the film carrier 30, then inner lead bonding is performed, and the semiconductor element 1 is mounted on the heat dissipation plate 6 of the radiator 5, and an adhesive is applied. The heat sink 6 and the semiconductor element 1 are adhered to each other by using 8. The difference from the second embodiment is that a flat metal plate 9b having an open central portion is placed on the end portion 7a of the leg portion 7 of the radiator 5. After placing the metal plate 9b,
The semiconductor package 50 is obtained by performing sealing with the resin 4. Here again, since the leg portions 7 have elasticity, the height from the heat sink 6 to the metal plate 9b is determined by the semiconductor package 5
It can be molded to the same height as 0.

【0029】上記のように構成された第三実施例によれ
ば、上述と同様に、放熱板6と金属板9bとが樹脂封止
に用いられる金型に密着するので、放熱器5は半導体パ
ッケージ50と同じ高さになり、放熱板6は浮上せず、
放熱板6の放熱面6b及び金属板9bの上面への樹脂4
の回り込みを防止できる。そして、放熱板6の放熱面6
bと金属板9bとが半導体パッケージ50の両面より露
出しているので、半導体素子1が発生する熱を効率良く
放熱することができる。また、放熱器5が放熱板6と複
数の脚部7とからなり、各脚部7間は開放されていると
ともに、各脚部7は樹脂4が通過可能な切欠部7cを有
するので、樹脂封止の際の樹脂4の流動性が向上し、樹
脂4の未充填を防止できる。特に、この第三実施例で
は、金属板9bが中央部に開口を有しているので、半導
体素子1の上面における樹脂4の流動性も極めて向上す
る。
According to the third embodiment constructed as described above, the radiator plate 6 and the metal plate 9b are brought into close contact with the mold used for resin sealing in the same manner as described above. It becomes the same height as the package 50, and the heat sink 6 does not float,
Resin 4 on the heat radiation surface 6b of the heat radiation plate 6 and the upper surface of the metal plate 9b
Can be prevented from wrapping around. Then, the heat dissipation surface 6 of the heat dissipation plate 6
Since b and the metal plate 9b are exposed from both surfaces of the semiconductor package 50, the heat generated by the semiconductor element 1 can be efficiently radiated. Further, since the radiator 5 is composed of the radiator plate 6 and the plurality of leg portions 7, the spaces between the leg portions 7 are open, and each leg portion 7 has the cutout portion 7c through which the resin 4 can pass, The fluidity of the resin 4 at the time of sealing is improved, and it is possible to prevent the resin 4 from being unfilled. In particular, in the third embodiment, the metal plate 9b has an opening in the central portion, so that the fluidity of the resin 4 on the upper surface of the semiconductor element 1 is significantly improved.

【0030】なお、上記各実施例においては、脚部7が
弾性を有するので、樹脂封止前の脚部7の高さを、成型
される半導体パッケージ50の厚みよりも高くするが、
脚部7が弾性を有さない場合は、樹脂封止前の脚部7の
高さを、成型される半導体パッケージ50の厚みとほぼ
同じ高さにすればよい。従って、上記第二または第三実
施例のように脚部7の端部7a上に金属板9aまたは9
bを載置する場合は、この金属板9aまたは9bも実質
的に脚部7の一部と考えてその高さを設定すればよい。
また、第二または第三実施例において脚部7が弾性を有
さない場合は、図5または図7に示すように、金属板9
aまたは9bを脚部7の端部7aに接着剤8′を用いて
接着してもよい。
In the above embodiments, since the leg portion 7 has elasticity, the height of the leg portion 7 before resin sealing is made higher than the thickness of the semiconductor package 50 to be molded.
When the leg portion 7 does not have elasticity, the height of the leg portion 7 before resin sealing may be set to substantially the same height as the thickness of the semiconductor package 50 to be molded. Therefore, as in the second or third embodiment, the metal plate 9a or 9 is formed on the end portion 7a of the leg portion 7.
When b is to be placed, the height of the metal plate 9a or 9b may be set on the assumption that it is substantially a part of the leg portion 7.
If the leg portion 7 does not have elasticity in the second or third embodiment, as shown in FIG. 5 or FIG.
Alternatively, a or 9b may be adhered to the end 7a of the leg 7 by using an adhesive 8 '.

【0031】以上、本発明の実施例に付き説明したが、
本発明は上記各実施例に限定されるものではなく、本発
明の意図する構造を有するものは同様の作用効果が得ら
れる。
The embodiments of the present invention have been described above.
The present invention is not limited to the above embodiments, and those having the structure intended by the present invention can obtain the same operational effect.

【0032】[0032]

【発明の効果】以上説明したように、本発明によれば、
半導体素子より大きい面積を有し半導体素子の裏面を覆
う放熱板と複数の脚部とからなる放熱器を用い、各脚部
を半導体パッケージとほぼ同じ高さにするか、または弾
性を有する各脚部を半導体パッケージよりも高くするこ
とによって、樹脂封止を行う際に用いる上下の金型内
で、一方の金型により各脚部が押され、放熱板の放熱面
が他方の金型に押し付けられるので、放熱板の放熱面は
金型に密着し、樹脂の圧力の影響を受けず、放熱板の露
出面への樹脂の回り込みを防止できる。このため、半導
体素子が発生する熱の放熱性を極めて向上させることが
できる。しかも、半導体パッケージを基板に実装する際
には、基板と放熱板との間に樹脂が介在しないので、基
板への熱伝導性及び電気伝導性が良くなり、放熱性と電
気的安定性とを著しく向上させることができる。さら
に、樹脂が放熱板の露出面に回り込むことがないため、
半導体パッケージの見栄えも良く歩留りが上がる。
As described above, according to the present invention,
A heat radiator having a larger area than the semiconductor element and covering the back surface of the semiconductor element and a plurality of leg portions is used, and each leg portion has substantially the same height as the semiconductor package or each leg has elasticity. By making the part higher than the semiconductor package, each leg is pressed by one mold in the upper and lower molds used for resin sealing, and the heat dissipation surface of the heat dissipation plate is pressed against the other mold. Therefore, the heat dissipation surface of the heat dissipation plate is in close contact with the mold, is not affected by the pressure of the resin, and the resin can be prevented from flowing around the exposed surface of the heat dissipation plate. For this reason, the heat dissipation of the heat generated by the semiconductor element can be extremely improved. Moreover, when the semiconductor package is mounted on the substrate, the resin is not interposed between the substrate and the heat sink, so that the thermal conductivity and electrical conductivity to the substrate are improved, and the heat dissipation and electrical stability are improved. It can be significantly improved. Furthermore, since the resin does not go around the exposed surface of the heat sink,
The appearance of semiconductor packages is good and the yield is high.

【0033】また、複数の脚部を互いに離間して設けて
各脚部間を開放させることによって、さらに、脚部に切
欠部を設けることによって、樹脂封止の際の樹脂の流動
を妨げることがないので、半導体パッケージの成型を確
実に行うことができ、薄型の半導体パッケージに対して
も充分に適応できる。
Further, a plurality of leg portions are provided apart from each other to open each leg portion, and a cutout portion is further provided in the leg portions to prevent the flow of resin during resin sealing. Therefore, the semiconductor package can be surely molded and can be sufficiently applied to a thin semiconductor package.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第一実施例である半導体パッケージの
断面図である。
FIG. 1 is a cross-sectional view of a semiconductor package that is a first embodiment of the present invention.

【図2】図1のA−A線における断面図である。FIG. 2 is a sectional view taken along line AA of FIG.

【図3】本発明の第一実施例の放熱器に半導体素子を載
置した状態の斜視図である。
FIG. 3 is a perspective view showing a state where a semiconductor element is mounted on the radiator of the first embodiment of the present invention.

【図4】上記放熱器の脚部の拡大斜視図である。FIG. 4 is an enlarged perspective view of a leg portion of the radiator.

【図5】本発明の第二実施例である半導体パッケージの
断面図である。
FIG. 5 is a sectional view of a semiconductor package that is a second embodiment of the present invention.

【図6】図5の半導体パッケージを金属板側から見たと
きの表面図である。
6 is a front view of the semiconductor package of FIG. 5 when viewed from the metal plate side.

【図7】本発明の第三実施例である半導体パッケージの
断面図である。
FIG. 7 is a sectional view of a semiconductor package that is a third embodiment of the present invention.

【図8】図7の半導体パッケージを金属板側から見たと
きの表面図である。
8 is a front view of the semiconductor package of FIG. 7 when viewed from the metal plate side.

【図9】従来の半導体パッケージの断面図である。FIG. 9 is a cross-sectional view of a conventional semiconductor package.

【符号の説明】 1 半導体素子 2 リード 3 フィルム基材 4 樹脂 5 放熱器 6 放熱板 6a 吸熱面 6b 放熱面 7 脚部 7a 端部 7b 支持面 7c 切欠部 8 接着剤 9a 金属板 9b リング状金属板 30 フィルムキャリア 50 半導体パッケージ[Explanation of reference numerals] 1 semiconductor element 2 lead 3 film substrate 4 resin 5 radiator 6 radiator plate 6a heat absorbing surface 6b radiator surface 7 legs 7a end 7b support surface 7c cutout 8 adhesive 9a metal plate 9b ring-shaped metal Plate 30 Film carrier 50 Semiconductor package

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 半導体パッケージ中に樹脂封止された半
導体素子が発生する熱を放熱する放熱器において、 前記半導体素子より大きい面積を有し前記半導体素子の
裏面を覆う放熱板に、前記半導体パッケージの厚みとほ
ぼ同じ高さを有する複数の脚部を互いに離間して設けた
ことを特徴とする放熱器。
1. A heat radiator that radiates heat generated by a semiconductor element encapsulated in a resin in a semiconductor package, wherein the heat dissipation plate that has a larger area than the semiconductor element and covers a back surface of the semiconductor element is provided with the semiconductor package. A plurality of legs having substantially the same height as the thickness of the heat sink are spaced apart from each other.
【請求項2】 前記脚部には切欠部が設けられているこ
とを特徴とする請求項1記載の放熱器。
2. The radiator according to claim 1, wherein the leg portion is provided with a cutout portion.
【請求項3】 前記脚部は前記放熱板と平行な支持面を
有する端部を備えていることを特徴とする請求項1記載
の放熱器。
3. The radiator according to claim 1, wherein the leg portion includes an end portion having a supporting surface parallel to the heat radiation plate.
【請求項4】 半導体パッケージ中に樹脂封止された半
導体素子が発生する熱を放熱する放熱器において、 前記半導体素子より大きい面積を有し前記半導体素子の
裏面を覆う放熱板に、高さが前記半導体パッケージの厚
みよりも高くかつ弾性を有する複数の脚部を互いに離間
して設けたことを特徴とする放熱器。
4. A radiator for radiating heat generated by a resin-sealed semiconductor element in a semiconductor package, wherein a radiator plate having an area larger than that of the semiconductor element and covering a back surface of the semiconductor element has a height of A radiator characterized in that a plurality of leg portions having a thickness higher than the thickness of the semiconductor package and having elasticity are provided separately from each other.
【請求項5】 前記脚部には切欠部が設けられているこ
とを特徴とする請求項4記載の放熱器。
5. The radiator according to claim 4, wherein the leg portion is provided with a cutout portion.
【請求項6】 前記脚部は前記放熱板と平行な支持面を
有する端部を備えていることを特徴とする請求項4記載
の放熱器。
6. The radiator according to claim 4, wherein the leg portion includes an end portion having a support surface parallel to the heat radiation plate.
【請求項7】 多数の導電性リードを有する絶縁性フィ
ルム基材に半導体素子を搭載して樹脂封止を行った半導
体パッケージにおいて、 前記半導体素子より大きい面積を有する放熱板と、この
放熱板に互いに離間して設けられた複数の脚部とからな
る放熱器を備え、前記放熱板の一方の面を前記半導体素
子の裏面に接触させかつ他方の面を前記半導体パッケー
ジの一方の外面に露出させるとともに、前記複数の脚部
の端部を前記半導体パッケージの他方の外面に露出させ
たことを特徴とする半導体パッケージ。
7. A semiconductor package in which a semiconductor element is mounted on an insulating film substrate having a large number of conductive leads and resin-sealed, and a heat sink having an area larger than that of the semiconductor element, and the heat sink. A heat radiator including a plurality of legs provided apart from each other is provided, one surface of the heat dissipation plate is in contact with the back surface of the semiconductor element, and the other surface is exposed to one outer surface of the semiconductor package. At the same time, the end portions of the plurality of legs are exposed at the other outer surface of the semiconductor package.
【請求項8】 前記放熱器の前記脚部には切欠部が設け
られていることを特徴とする請求項7記載の半導体パッ
ケージ。
8. The semiconductor package according to claim 7, wherein the leg portion of the radiator is provided with a cutout portion.
【請求項9】 前記放熱器の前記脚部の前記端部には前
記放熱板と平行な支持面が設けられていることを特徴と
する請求項7記載の半導体パッケージ。
9. The semiconductor package according to claim 7, wherein a support surface parallel to the heat dissipation plate is provided at the end portion of the leg portion of the radiator.
JP2746493A 1993-01-21 1993-01-21 Radiator and semiconductor package using this radiator Withdrawn JPH06224326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2746493A JPH06224326A (en) 1993-01-21 1993-01-21 Radiator and semiconductor package using this radiator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2746493A JPH06224326A (en) 1993-01-21 1993-01-21 Radiator and semiconductor package using this radiator

Publications (1)

Publication Number Publication Date
JPH06224326A true JPH06224326A (en) 1994-08-12

Family

ID=12221842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2746493A Withdrawn JPH06224326A (en) 1993-01-21 1993-01-21 Radiator and semiconductor package using this radiator

Country Status (1)

Country Link
JP (1) JPH06224326A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242797B1 (en) 1997-05-19 2001-06-05 Nec Corporation Semiconductor device having pellet mounted on radiating plate thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242797B1 (en) 1997-05-19 2001-06-05 Nec Corporation Semiconductor device having pellet mounted on radiating plate thereof

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