JPH06212440A - Electroless plating method on non-conductive substrate - Google Patents
Electroless plating method on non-conductive substrateInfo
- Publication number
- JPH06212440A JPH06212440A JP23998793A JP23998793A JPH06212440A JP H06212440 A JPH06212440 A JP H06212440A JP 23998793 A JP23998793 A JP 23998793A JP 23998793 A JP23998793 A JP 23998793A JP H06212440 A JPH06212440 A JP H06212440A
- Authority
- JP
- Japan
- Prior art keywords
- electroless plating
- substrate
- treatment
- conductive substrate
- activating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007772 electroless plating Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 title claims description 67
- 238000000034 method Methods 0.000 title claims description 28
- 230000003213 activating effect Effects 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 21
- 230000003746 surface roughness Effects 0.000 claims abstract description 19
- 230000001235 sensitizing effect Effects 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 abstract description 10
- 229910021626 Tin(II) chloride Inorganic materials 0.000 abstract description 5
- 235000011150 stannous chloride Nutrition 0.000 abstract description 5
- 150000002815 nickel Chemical class 0.000 abstract description 2
- 150000002940 palladium Chemical class 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 229910018104 Ni-P Inorganic materials 0.000 description 10
- 229910018536 Ni—P Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- 238000005238 degreasing Methods 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000005554 pickling Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000001119 stannous chloride Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000001603 reducing effect Effects 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. are used Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、非導電性素地上への無
電解めっき方法に関し、特に異常粒成長の発生のない、
均一でかつ極めて平滑な無電解めっき被膜表面を得る方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for electroless plating on a non-conductive substrate, which is free from abnormal grain growth.
The present invention relates to a method for obtaining a uniform and extremely smooth electroless plating film surface.
【0002】[0002]
【従来の技術】従来より、非導電性素地に各種の無電解
めっきを行なう場合には、無電解めっき反応を進行させ
るための触媒核を非導電性素地表面に吸着させることが
知られている。そして、そのための前処理として、非導
電性素地を脱脂、酸洗、センシタイジング(感受性
化)、次いでアクチベーティング(活性化)する方法が
用いられてきた。2. Description of the Related Art Conventionally, when performing various electroless plating on a non-conductive substrate, it is known to adsorb a catalyst nucleus for advancing the electroless plating reaction on the surface of the non-conductive substrate. . Then, as a pretreatment for that purpose, a method of degreasing, pickling, sensitizing (sensitizing) the non-conductive substrate, and then activating (activating) it has been used.
【0003】しかし、このような触媒核を形成する方法
では非導電性素地上に還元析出したパラジウム等の触媒
核が微視的に不均一に存在するため、非導電性素地上に
粗大粒子が生成してしまい、この結果、形成された無電
解めっき被膜に微小突起が生じ、表面粗さも大きくなる
という問題があった。However, in the method of forming such a catalyst nucleus, since the catalyst nucleus of palladium or the like reduced and deposited on the non-conductive matrix is microscopically nonuniform, coarse particles are formed on the non-conductive matrix. As a result, there is a problem that minute projections are generated in the formed electroless plating film and the surface roughness is increased.
【0004】[0004]
【発明が解決しようとする課題】非導電性素地への無電
解めっき処理は、例えば、磁気ディスクの下地層を形成
する場合にも適用することができる。磁気ディスクは高
密度化の要求に伴い、記録再生時におけるヘッドの磁気
ディスクからの浮上高さを低くすることが要求されてい
る。そのために、磁気ディスク表面にヘッドの浮上高さ
より大きな突起があってはならず、表面粗さは小さいこ
とが求められている。The electroless plating treatment on the non-conductive substrate can be applied to the case of forming the underlayer of the magnetic disk, for example. With the demand for higher density in magnetic disks, it is required to reduce the flying height of the head from the magnetic disk during recording and reproduction. Therefore, the surface of the magnetic disk should not have protrusions larger than the flying height of the head, and the surface roughness is required to be small.
【0005】しかしながら、上述した触媒核を用いる方
法では無電解めっき被膜に微小突起が形成され、表面粗
さも大きくなるため良好な磁気ディスクを得ることがで
きない。従って、このような微小突起を除去する目的で
表面を研磨処理し、平滑化する方法が採用されている。
しかし、無電解めっき後の研磨処理は多大な労働を要す
るものであり、研磨処理の簡略化が可能な工程、即ち、
非導電性素地上に微小突起のない微視的に均一な表面状
態を有する無電解めっき被膜を形成する方法が望まれて
いた。However, in the method using the above-mentioned catalyst nucleus, fine projections are formed on the electroless plating film and the surface roughness becomes large, so that a good magnetic disk cannot be obtained. Therefore, for the purpose of removing such minute protrusions, a method of polishing and smoothing the surface is adopted.
However, the polishing process after the electroless plating requires a lot of labor, and a process capable of simplifying the polishing process, that is,
A method of forming an electroless plating film having a microscopically uniform surface state without microprojections on the non-conductive substrate has been desired.
【0006】[0006]
【課題を解決するための手段】本発明者らは、上記要望
に応えるため鋭意検討を行なった結果、非導電性素地上
に無電解めっき被膜を形成するのに際し、アクチベーテ
ィング終了後の洗浄を超音波照射下に行なうことによ
り、得られる無電解めっき被膜の表面外観が著しく改善
され微小突起も著しく少なくなることを知見し、本発明
をなすに至った。Means for Solving the Problems As a result of intensive studies to meet the above demands, the present inventors have found that when forming an electroless plating film on a non-conductive substrate, cleaning after completion of activation. It was found that the surface appearance of the obtained electroless plating film is remarkably improved and the number of microscopic protrusions is remarkably reduced by carrying out the process under ultrasonic irradiation, and the present invention has been completed.
【0007】即ち、本発明の要旨は、第一には非導電性
素地をアクチベーティング処理後無電解めっきを行なう
方法において、アクチベーティング処理終了後の洗浄を
超音波を照射しながら行なうことを特徴とする非導電性
素地上への無電解めっき方法に存し、また、第二には、
ガラス基板上に金属薄膜を被覆してなる磁気ディスク用
基板において、形成した金属薄膜の表面粗さRaが金属
被覆前の基板の表面粗さRaの1.2倍以内である表面
形状を有することを特徴とする磁気ディスク用基板に存
する。That is, the gist of the present invention is, firstly, that in a method of performing electroless plating after activating a non-conductive substrate, cleaning after the activating treatment is performed while irradiating ultrasonic waves. In the electroless plating method on the non-conductive substrate, which is characterized by
In a magnetic disk substrate formed by coating a glass substrate with a metal thin film, the surface roughness Ra of the formed metal thin film is within 1.2 times the surface roughness Ra of the substrate before metal coating. The present invention resides in a substrate for a magnetic disk.
【0008】以下、本発明を詳細に説明する。本発明の
非導電性素地上への無電解めっき処理は、センシタイジ
ング処理、アクチベーティング処理、次いで無電解めっ
きの順に行われる。そして通常は、センシタイジング処
理の前に脱脂工程、酸洗工程が設けられる。また、各工
程間には洗浄工程が設けられ、アクチベーティング処理
後の洗浄後には乾燥工程を設けることもできる。The present invention will be described in detail below. The electroless plating treatment on the non-conductive substrate of the present invention is performed in the order of sensitizing treatment, activating treatment, and then electroless plating. Then, usually, a degreasing step and a pickling step are provided before the sensitizing treatment. A washing step may be provided between the steps, and a drying step may be provided after the washing after the activating treatment.
【0009】脱脂、酸洗、センシタイジング処理、アク
チベーティング処理、無電解めっきは通常の方法によっ
て行えば良く、アクチベーティング処理後の洗浄は超音
波を照射する以外は通常の方法で行えば良い。超音波の
照射は、超音波の振動子を槽内のどこに配置して行なっ
ても良い。超音波の波長としては20〜1600KHz
程度が好ましく、高周波になる程小粒子径の凝集粒子の
除去が可能になる。また、出力の大きさは槽の大きさに
対し、0.5〜10W/cm2 程度が望ましい。Degreasing, pickling, sensitizing treatment, activating treatment and electroless plating may be carried out by usual methods, and washing after the activating treatment may be carried out by usual methods other than irradiating ultrasonic waves. I'm fine. The ultrasonic wave irradiation may be performed by arranging the ultrasonic wave vibrator anywhere in the tank. The wavelength of ultrasonic waves is 20 to 1600 KHz
The degree is preferable, and as the frequency becomes higher, it becomes possible to remove agglomerated particles having a small particle size. Further, the output size is preferably about 0.5 to 10 W / cm 2 with respect to the size of the tank.
【0010】超音波を照射しながらの洗浄は、室温で良
いが、必要に応じて加温することもできる。洗浄時間
は、15秒以上、より好ましくは20秒以上であるが、
洗浄時間を延長しても非導電性素地上の粗大粒子の減少
効果、つまり、無電解めっき被膜の微小突起を減少させ
る効果が飽和するために、洗浄は長くても2分程度で良
い。The cleaning while irradiating with ultrasonic waves may be performed at room temperature, but may be heated if necessary. The cleaning time is 15 seconds or more, more preferably 20 seconds or more,
Even if the cleaning time is extended, the effect of reducing the coarse particles on the non-conductive substrate, that is, the effect of reducing the fine projections of the electroless plating film is saturated, so that the cleaning may be performed for about 2 minutes at the longest.
【0011】また、本発明における非導電性素地とは、
ガラス、セラミックス、プラスチック等が使用され、磁
気ディスク用途としてはガラスが好適に用いられる。次
に、各工程について説明する。センシタイジング処理、
アクチベーティング処理は非導電性素地上に無電解めっ
きを開始させるために必要な触媒活性を与える工程であ
る。すなわち、非導電性素地の表面は触媒活性がないた
めに、無電解めっきを開始するためには、非導電性素地
の表面にAu、Pt、Pd、Ag等の貴金属の触媒核を
形成することが必要である。Further, the non-conductive substrate in the present invention means
Glass, ceramics, plastics, etc. are used, and glass is preferably used for magnetic disk applications. Next, each step will be described. Sensitizing process,
The activating process is a process of providing the non-conductive substrate with a catalytic activity necessary for initiating electroless plating. That is, since the surface of the non-conductive substrate has no catalytic activity, in order to start the electroless plating, a catalytic nucleus of a noble metal such as Au, Pt, Pd, or Ag should be formed on the surface of the non-conductive substrate. is necessary.
【0012】センシタイジング処理は、非導電性素地を
センシタイザー(感応性賦与剤)溶液に浸漬することに
より、素地表面に金属イオンを吸着させるものである。
センシタイザー溶液としては、従来より知られているS
n、Ti、Pb、Hg等から成る2価の金属イオンを含
む溶液であれば良く、特に限定されるものではないが、
「金属表面技術」(16巻、No.1、1965、p.
26)に記載されているように、塩化第一スズまたは硫
酸第一スズを主体とした液を用いることができる。通
常、塩化第一スズ溶液が好適に使用され、塩化第一スズ
を水に溶解するために塩酸などの無機酸を共存させる方
法も用いられる。In the sensitizing treatment, a metal ion is adsorbed on the surface of the base material by immersing the non-conductive base material in a sensitizer (sensitizing agent) solution.
As a sensitizer solution, S which has been conventionally known
Any solution containing a divalent metal ion composed of n, Ti, Pb, Hg, etc. may be used, and is not particularly limited.
"Metal surface technology" (16 volumes, No. 1, 1965, p.
As described in 26), a liquid containing stannous chloride or stannous sulfate as a main component can be used. Usually, a stannous chloride solution is preferably used, and a method in which an inorganic acid such as hydrochloric acid coexists in order to dissolve stannous chloride in water is also used.
【0013】本発明においては、1g〜100g/lの
塩化第一スズ溶液が好適に用いられる。尚、センシタイ
ザーの種類は、非導電性素地の種類や無電解めっきの種
類によって大きく変わるものではない。そして、非導電
性素地のセンシタイザー溶液の浸漬は、室温〜50℃に
おいて1〜5分間行なわれる。In the present invention, a 1 g to 100 g / l stannous chloride solution is preferably used. The type of sensitizer does not change greatly depending on the type of non-conductive substrate and the type of electroless plating. Then, the immersion of the sensitizer solution of the non-conductive substrate is performed at room temperature to 50 ° C. for 1 to 5 minutes.
【0014】アクチベーティング処理とは、センシタイ
ジング処理により素地上に吸着した金属イオンの還元作
用によって、触媒活性の強い金属微粒子を素地表面に一
様に分布形成する工程である。本発明のアクチベーティ
ング処理は、センシタイジング処理が終了した非導電性
素地をアクチベーティング溶液中に浸漬することにより
行なうものである。The activating treatment is a process of uniformly forming fine metal particles having a strong catalytic activity on the surface of the substrate by the reducing action of the metal ions adsorbed on the substrate by the sensitizing process. The activating process of the present invention is carried out by immersing the non-conductive substrate after the sensitizing process in the activating solution.
【0015】アクチベーティング溶液としては一般に、
Pd、Pt、Au、Agなどの貴金属塩の水溶液が用い
られ、中でもパウジウム塩水溶液が好ましい。本発明に
おいては、0.1g〜1.0g/lの塩化パラジウム水
溶液が好適に使用される。アクチベーティング処理終了
後の洗浄工程は、素地表面に付着したアクチベーティン
グ剤を除去する目的で行なわれるものである。洗浄方法
は流水洗浄、浸漬洗浄等が用いられ、洗浄水としては、
イオン交換水、超純水等が使用される。The activating solution generally comprises:
An aqueous solution of a noble metal salt such as Pd, Pt, Au, or Ag is used, and of these, an aqueous solution of a palladium salt is preferable. In the present invention, a 0.1 g to 1.0 g / l palladium chloride aqueous solution is preferably used. The cleaning step after the activating treatment is performed for the purpose of removing the activating agent adhering to the surface of the base material. As the cleaning method, running water cleaning, immersion cleaning, etc. are used.
Ion exchange water, ultrapure water, etc. are used.
【0016】無電解めっきは、一般に非導電性素地上に
各種機能を付与するために広く利用されており、無電解
ニッケルめっきを行なう場合には、通常、めっき液とし
て、水溶性ニッケル塩、有機酸塩(錯化剤)及び次亜リ
ン酸又は次亜リン酸塩(次亜リン酸ナトリウム等)等の
還元剤を含有した公知のめっき浴が使用される。まため
っき浴は、酸性浴でもアルカリ性浴でも良く、例えばp
H4〜10の範囲が採用される。尚、磁気ディスクの下
地層の製造においては、通常、pH4〜6の酸性無電解
ニッケルめっき浴を用い、リン含量11〜12重量%の
Ni−P被膜を膜厚0.1〜15μm程度に形成するこ
とが行なわれている。The electroless plating is generally widely used to impart various functions to the non-conductive substrate, and when electroless nickel plating is performed, the plating solution is usually a water-soluble nickel salt or an organic solution. A known plating bath containing an acid salt (complexing agent) and a reducing agent such as hypophosphorous acid or hypophosphite (sodium hypophosphite) is used. The plating bath may be an acidic bath or an alkaline bath, for example p
The range of H4 to 10 is adopted. Incidentally, in the production of the underlayer of the magnetic disk, an acidic electroless nickel plating bath having a pH of 4 to 6 is usually used to form a Ni-P coating having a phosphorus content of 11 to 12% by weight to a film thickness of about 0.1 to 15 μm. Is being done.
【0017】また、非導電性素地の脱脂工程は、素地表
面を洗浄する工程であり、公知の方法において素地の材
質により条件が選択され実施される。例えば、ガラス素
地を用いる場合には、一般にアルカリ性脱脂液が好まし
く、特に1〜30重量%程度の水酸化カリウムあるいは
水酸化ナトリウム水溶液が好適に用いられる。また脱脂
の効果をより高めるため超音波照射下に行なうのが好ま
しい。The degreasing step for the non-conductive substrate is a step for cleaning the surface of the substrate, and the conditions are selected according to the material of the substrate by a known method. For example, when a glass substrate is used, an alkaline degreasing liquid is generally preferable, and a potassium hydroxide or sodium hydroxide aqueous solution of about 1 to 30% by weight is particularly preferably used. Further, in order to further enhance the effect of degreasing, it is preferable to carry out under ultrasonic irradiation.
【0018】酸洗は、次工程のセンシタイジング処理で
の金属イオンの吸着を良好に進行させるためのものであ
り、前工程のアルカリ脱脂液が残存する場合は中和の役
割を果たす。酸洗液としては硫酸水溶液などが使用さ
れ、pH2〜3程度の硫酸水溶液が好適に用いられる。
無電解めっき前の乾燥工程は、非導電性素地と触媒核で
ある金属微粒子との付着強度を増加させ、素地とめっき
被膜との密着性を向上させる効果があり、その結果、微
小突起のない均一な表面粗さの無電解めっき被膜を形成
することが可能となる。乾燥方法としては基板を水洗
後、純水に浸漬して徐々に引き上げながら乾燥させる方
法が好ましいが、通常の風乾処理、ヒーターによる乾燥
方法等を採用しても良い。The pickling is for promoting the adsorption of metal ions in the sensitizing treatment in the next step, and plays a role of neutralization when the alkaline degreasing solution in the previous step remains. A sulfuric acid aqueous solution or the like is used as the pickling solution, and a sulfuric acid aqueous solution having a pH of about 2 to 3 is preferably used.
The drying step before electroless plating has the effect of increasing the adhesion strength between the non-conductive base material and the metal fine particles that are the catalyst nuclei, and improving the adhesion between the base material and the plating film, and as a result, there is no microprotrusion. It becomes possible to form an electroless plating film having a uniform surface roughness. As a drying method, a method of washing the substrate with water, immersing it in pure water and gradually pulling it up to dry it is preferable, but a usual air drying process, a drying method with a heater or the like may be adopted.
【0019】また、本発明における磁気ディスク用基板
は、非導電性素地、特にガラス基板上に金属を被覆した
ものであり、金属被覆前の基板の表面形状がほとんどそ
のまま保たれた表面状態を有している。金属薄膜の表面
粗さ(平均粗さRa)は、金属被覆前の基板の表面粗さ
(平均粗さRa)の1.2倍以内、好ましくは0.7〜
1.2倍である。The magnetic disk substrate according to the present invention is a non-conductive substrate, particularly a glass substrate coated with a metal, and has a surface state in which the surface shape of the substrate before metal coating is maintained almost as it is. is doing. The surface roughness (average roughness Ra) of the metal thin film is within 1.2 times the surface roughness (average roughness Ra) of the substrate before metal coating, preferably 0.7 to.
It is 1.2 times.
【0020】[0020]
【実施例】以下、本発明を実施例により更に詳細に説明
するが、本発明は、その要旨を越えない限り、以下の実
施例に限定されるものではない。尚、以下の諸例におい
て各測定は、次の方法によって行った。 (1)Ni−P被膜の外観 オリンパス照明装置Model LSDを用いて、目視
で外観むらの程度を観察した。 (2)中心線平均粗さ(Ra)及び突起高さ(最大突起
高さよりベース高さを差し引いて求めたもの) 先端が0.2μm角の触針を有する表面粗さ計(ランク
テーラーホブソン(株)製「タリステップ」)により、
計測長1mm、計測倍率200,000、計測速度0.
025mm/sec、フィルタ0.33Hzの条件で測
定を行なった。EXAMPLES The present invention will be described in more detail with reference to examples below, but the present invention is not limited to the following examples as long as the gist thereof is not exceeded. In addition, in each of the following examples, each measurement was performed by the following method. (1) Appearance of Ni-P coating The degree of appearance unevenness was visually observed using an Olympus illumination device Model LSD. (2) Centerline average roughness (Ra) and protrusion height (obtained by subtracting base height from maximum protrusion height) Surface roughness meter (rank Taylor Hobson (Rank Taylor Hobson ( "Taristep" manufactured by)
Measurement length 1 mm, measurement magnification 200,000, measurement speed 0.
The measurement was performed under the conditions of 025 mm / sec and a filter of 0.33 Hz.
【0021】実施例1〜6 直径2.5インチ、厚さ0.889mmの2種類のガラ
ス基板(カリウム強化ソーダライムガラス)A(中心線
平均粗さの平均Ra8Å)及びB(同Ra9Å)に対
し、以下の無電解めっき処理を施し、ガラス基板の表面
にニッケル−リンの成膜を行なった。尚、各工程は回転
治具を用いて基板を回転させながら実施し、また、各洗
浄工程における洗浄水は超純水を用いた。まず、上記ガ
ラス基板を5%水酸化カリウム水溶液に5分間浸漬し、
脱脂処理を行なった後、2分間流水洗浄し、次いでpH
2〜3の硫酸水溶液で1分間酸洗後、2分間の流水洗浄
を行なった。Examples 1 to 6 Two kinds of glass substrates (potassium reinforced soda lime glass) 2.5 inch in diameter and 0.889 mm in thickness A (center line average roughness average Ra8Å) and B (same Ra9Å) were used. On the other hand, the following electroless plating treatment was performed to form a nickel-phosphorus film on the surface of the glass substrate. Each step was performed while rotating the substrate using a rotating jig, and ultrapure water was used as cleaning water in each cleaning step. First, the glass substrate is immersed in a 5% aqueous solution of potassium hydroxide for 5 minutes,
After degreasing, wash with running water for 2 minutes, then pH
After pickling with an aqueous solution of 2-3 sulfuric acid for 1 minute, washing with running water for 2 minutes was performed.
【0022】その後、ガラス基板を1g/lの塩化第1
スズ水溶液(塩酸によりpH3に調整)に1分間浸漬し
てセンシタイジング処理し、1分間流水洗浄した。次い
で、0.2g/lの塩化パラジウム水溶液(塩酸により
pH3に調整)に1分間浸漬し、アクチベーティング処
理を行なった。次に、ガラス基板を室温にて1分間流水
洗浄後、室温の超純水槽中に浸漬し、超音波発生装置
(電子技術工業(株)製ULTRASONIC CLE
ANERUS−600CRS)により28KHz,60
0W(1.6W/cm2 )の超音波を表1に示す時間内
(15〜60秒間)照射を行なった。そして、スピード
ファムクリーンシステム(株)製の自動2槽式温純水乾
燥装置を用いて40℃の純水槽に一旦浸漬し、80mm
/分の引き上げ速度で洗浄槽から引き上げ、乾燥を行な
った。After that, the glass substrate was placed on a 1 g / l first chloride solution.
It was immersed in an aqueous tin solution (adjusted to pH 3 with hydrochloric acid) for 1 minute, subjected to sensitizing treatment, and washed with running water for 1 minute. Then, it was immersed in a 0.2 g / l palladium chloride aqueous solution (pH adjusted to 3 with hydrochloric acid) for 1 minute to carry out an activating treatment. Next, the glass substrate was washed with running water at room temperature for 1 minute and then immersed in an ultrapure water bath at room temperature to generate an ultrasonic wave generator (ULTRASONIC CLE manufactured by Electronic Technology Co., Ltd.).
28 KHz, 60 by ANERUS-600CRS)
Ultrasonic waves of 0 W (1.6 W / cm 2 ) were irradiated within the time period (15 to 60 seconds) shown in Table 1. Then, using an automatic 2-tank type warm pure water drying device manufactured by Speed Fam Clean System Co., Ltd., it was once immersed in a pure water tank at 40 ° C.
It was pulled up from the washing tank at a pulling rate of / min and dried.
【0023】次いで、磁気ディスク用ニッケルめっき液
(奥野製薬工業(株)製「ナイクラッド719」)を用
いて、pH4.5、浴温81℃の条件で120秒間めっ
きを行ない、ガラス基板上に1500ÅのNi−P被膜
を形成した。得られたNi−Pめっき基板表面の外観は
いずれも良好であった。また、中心線平均粗さ及び突起
高さを測定し、結果を表1に示す。この結果よりNi−
Pめっき基板の表面粗さRaは、ガラス基板の表面粗さ
Raに比較して、ガラス基板Aについては平均値で約
1.1倍、基板Bについては約1.0倍であった。Next, using a nickel plating solution for magnetic disks ("Niclad 719" manufactured by Okuno Chemical Industries Co., Ltd.), plating is performed for 120 seconds under the conditions of pH 4.5 and bath temperature 81 ° C, and 1500Å on a glass substrate. Ni-P coating of The appearance of the surface of each of the obtained Ni-P plated substrates was good. Further, the center line average roughness and the protrusion height were measured, and the results are shown in Table 1. From this result, Ni-
The surface roughness Ra of the P-plated substrate was about 1.1 times the average value for the glass substrate A and about 1.0 times the average value for the substrate B, as compared with the surface roughness Ra of the glass substrate.
【0024】実施例7,8 実施例3,6において、アクチベーティング処理後の水
洗を超音波発生装置として、(株)プレテック製FIN
E−SONIC PT−08M(周波数800KHz、
650W)を使用した以外は実施例1〜6と同様にガラ
ス基板にNi−P皮膜を形成した。得られたNi−Pめ
っき基板表面の外観はいずれも良好であった。また、中
心線平均粗さ及び突起高さを測定し、結果を表1に示
す。この結果よりNi−Pめっき基板の表面粗さRa
は、ガラス基板の表面粗さRaに比較して、ガラス基板
Aについては平均値で約0.8倍、基板Bについては約
0.9倍であった。Embodiments 7 and 8 In Embodiments 3 and 6, FINK manufactured by Pretec Co., Ltd. was used as an ultrasonic wave generator after washing with water after the activating treatment.
E-SONIC PT-08M (Frequency 800 KHz,
A Ni-P film was formed on a glass substrate in the same manner as in Examples 1 to 6 except that 650 W) was used. The appearance of the surface of each of the obtained Ni-P plated substrates was good. Further, the center line average roughness and the protrusion height were measured, and the results are shown in Table 1. From this result, the surface roughness Ra of the Ni-P plated substrate was
Was about 0.8 times the average value for the glass substrate A and about 0.9 times for the substrate B as compared with the surface roughness Ra of the glass substrate.
【0025】比較例1〜2 実施例1〜6において、アクチベーティング処理後の水
洗を超音波を照射せずに、流水洗浄のみで行なった以外
は、実施例1〜6と同様に、ガラス基板にNi−P被膜
を形成した。得られた基板表面の外観はいずれも不良で
あった。中心線平均粗さ及び突起高さの測定結果を表1
に示す。この結果、Ni−Pめっき基板の表面粗さRa
は、ガラス基板の表面粗さRaに対し、ガラス基板Aに
ついては約1.9倍、基板Bについては約1.3倍であ
った。Comparative Examples 1-2 In the same manner as in Examples 1-6, except that in Examples 1-6, washing with water after the activating treatment was performed only by washing with running water without irradiation of ultrasonic waves. A Ni-P coating was formed on the substrate. The appearance of the surface of each of the obtained substrates was poor. Table 1 shows the measurement results of the center line average roughness and the protrusion height.
Shown in. As a result, the surface roughness Ra of the Ni-P plated substrate
Was about 1.9 times for the glass substrate A and about 1.3 times for the substrate B with respect to the surface roughness Ra of the glass substrate.
【0026】[0026]
【表1】 [Table 1]
【0027】[0027]
【発明の効果】以上説明した本発明によれば、超音波洗
浄を行なうことにより、無電解めっき被膜の微小突起を
減少させることができ、表面粗さの小さい平滑表面を得
ることができる。このため、磁気ディスク用下地膜を製
造する場合において、Ni−P被膜の研磨工程を簡略化
することが可能となり、しかも、高密度化に適した低浮
上基板を得ることができる。According to the present invention described above, by performing ultrasonic cleaning, it is possible to reduce the fine projections of the electroless plating film and obtain a smooth surface with a small surface roughness. Therefore, in the case of manufacturing the base film for a magnetic disk, the polishing process of the Ni-P coating can be simplified, and a low floating substrate suitable for high density can be obtained.
Claims (2)
後、アクチベーティング処理し、次いで無電解めっきを
行なう方法において、アクチベーティング処理終了後の
洗浄を超音波を照射しながら行なうことを特徴とする非
導電性素地上への無電解めっき方法1. A method of performing a sensitizing treatment on a non-conductive substrate, an activating treatment, and then an electroless plating, wherein cleaning after the activating treatment is performed while irradiating ultrasonic waves. Method for electroless plating on non-conductive substrate
磁気ディスク用基板において、形成した金属薄膜の表面
粗さRaが金属被覆前のガラス基板の表面粗さRaの
1.2倍以内である表面形状を有することを特徴とする
磁気ディスク用基板2. In a magnetic disk substrate comprising a glass substrate coated with a metal thin film, the surface roughness Ra of the formed metal thin film is 1.2 times or less than the surface roughness Ra of the glass substrate before metal coating. Magnetic disk substrate having a certain surface shape
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23998793A JP3275476B2 (en) | 1992-11-30 | 1993-09-27 | Substrate for magnetic disk |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32015192 | 1992-11-30 | ||
JP4-320151 | 1992-11-30 | ||
JP23998793A JP3275476B2 (en) | 1992-11-30 | 1993-09-27 | Substrate for magnetic disk |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06212440A true JPH06212440A (en) | 1994-08-02 |
JP3275476B2 JP3275476B2 (en) | 2002-04-15 |
Family
ID=26534530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23998793A Expired - Fee Related JP3275476B2 (en) | 1992-11-30 | 1993-09-27 | Substrate for magnetic disk |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11232627A (en) * | 1996-12-26 | 1999-08-27 | Hoya Corp | Substrate for information record medium |
JP2003041377A (en) * | 2001-08-02 | 2003-02-13 | Showa Denko Kk | CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE |
JP2007246963A (en) * | 2006-03-15 | 2007-09-27 | Yamato Denki Kogyo Kk | Plated body and plating method |
JP2008177261A (en) * | 2007-01-17 | 2008-07-31 | Okuno Chem Ind Co Ltd | Multilayer plating film and printed wiring board |
WO2011098428A1 (en) * | 2010-02-12 | 2011-08-18 | Atotech Deutschland Gmbh | Method for metallising objects which have at least two different plastics on the surface |
-
1993
- 1993-09-27 JP JP23998793A patent/JP3275476B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11232627A (en) * | 1996-12-26 | 1999-08-27 | Hoya Corp | Substrate for information record medium |
JP2003041377A (en) * | 2001-08-02 | 2003-02-13 | Showa Denko Kk | CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE |
JP2007246963A (en) * | 2006-03-15 | 2007-09-27 | Yamato Denki Kogyo Kk | Plated body and plating method |
JP2008177261A (en) * | 2007-01-17 | 2008-07-31 | Okuno Chem Ind Co Ltd | Multilayer plating film and printed wiring board |
WO2011098428A1 (en) * | 2010-02-12 | 2011-08-18 | Atotech Deutschland Gmbh | Method for metallising objects which have at least two different plastics on the surface |
EP2360294A1 (en) * | 2010-02-12 | 2011-08-24 | ATOTECH Deutschland GmbH | Method for metallising objects with at least two different plastics on their surface |
Also Published As
Publication number | Publication date |
---|---|
JP3275476B2 (en) | 2002-04-15 |
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