JPH06208991A - Semiconductor substrate processing method and apparatus - Google Patents
Semiconductor substrate processing method and apparatusInfo
- Publication number
- JPH06208991A JPH06208991A JP1966693A JP1966693A JPH06208991A JP H06208991 A JPH06208991 A JP H06208991A JP 1966693 A JP1966693 A JP 1966693A JP 1966693 A JP1966693 A JP 1966693A JP H06208991 A JPH06208991 A JP H06208991A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pressure
- processing
- chamber
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 title claims description 7
- 238000003672 processing method Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims description 8
- 238000006467 substitution reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 54
- 238000010586 diagram Methods 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体基板の処理におい
てウェーハ等の被処理物にパーティクルや不純物を付着
させない処理方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing method and apparatus for preventing particles and impurities from adhering to an object to be processed such as a wafer in processing a semiconductor substrate.
【０００２】[0002]
【従来の技術】図４は従来方法の１例を説明するための
図である。従来方法は、処理室内で被処理物を減圧下で
処理する場合、置換用ガスの供給下で被処理物を処理室
内に搬入した後、図４に示すように処理室の圧力が７６
０Torr（大気圧）で、置換用ガスを流さずに排気をｔ1
時点でスタートし、到達圧力Ｐ1 になるまで真空排気す
る。しかる後、ｔ2 時点で置換用ガス, 処理用ガスなど
を流し始めて被処理物を処理し始め、所望の圧力Ｐ2 に
してＣＶＤ膜生成などの処理を行っている。2. Description of the Related Art FIG. 4 is a diagram for explaining an example of a conventional method. According to the conventional method, when the object to be processed is processed under reduced pressure in the processing chamber, after the object to be processed is carried into the processing chamber under the supply of the replacement gas, the pressure in the processing chamber is 76 as shown in FIG.
At 0 Torr (atmospheric pressure), exhaust gas is t 1 without flowing the replacement gas.
It starts at the time point and is evacuated to the ultimate pressure P 1 . After that, at time t 2 , a replacement gas, a processing gas, etc. are started to flow to start processing the object to be processed, and a desired pressure P 2 is applied to perform processing such as CVD film formation.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら上記従来
方法にあっては、ｔ2 時点で置換用ガス等を流し始め、
このガスの流し始めにガスが処理室内に突入するため、
ガス流量及び圧力がＱa，Ｐa で示すように急変するこ
とにより処理室の室壁等に付着しているパーティクルや
不純物を巻き上げ、被処理物の表面に付着するという課
題がある。However, in the above conventional method, the replacement gas or the like is started to flow at time t 2 .
Since the gas rushes into the processing chamber at the beginning of this gas flow,
The gas flow rate and pressure change abruptly as indicated by Qa and Pa, which causes a problem that particles and impurities adhering to the chamber wall of the processing chamber are rolled up and adhere to the surface of the object to be processed.
【０００４】[0004]
【課題を解決するための手段】本発明は上記の課題を解
決するため、被処理物の設置された処理室を，置換用ガ
スを流しながら大気圧から所望の処理圧力まで減圧した
後、被処理物を処理し、又処理室をガス置換する場合、
置換用ガスを流しながら減圧排気し、しかる後大気圧に
戻すことを特徴とする。In order to solve the above-mentioned problems, the present invention reduces the pressure in a processing chamber in which an object to be processed is set from atmospheric pressure to a desired processing pressure while flowing a replacement gas, When processing the processed material and gas replacement of the processing chamber,
It is characterized in that it is evacuated under reduced pressure while flowing a replacement gas, and then returned to atmospheric pressure.
【０００５】このように処理室内で被処理物を減圧下で
処理する場合も、処理室を大気圧に戻す場合も置換用ガ
スを流しながら行うことにより従来技術の課題である真
空排気後のガスの流し始めに発生するパーティクルや不
純物の巻き上げを防止できることにな、被処理物にパー
ティクルや不純物が付着する量を大幅に軽減できること
になる。In this way, when the object to be treated is processed under reduced pressure in the processing chamber and also when the processing chamber is returned to atmospheric pressure, the gas for vacuum exhaustion, which is a problem of the prior art, is performed by flowing the replacement gas. It is possible to prevent the particles and impurities from being rolled up at the beginning of flowing, and it is possible to greatly reduce the amount of the particles and impurities attached to the object to be processed.
【０００６】[0006]
【実施例】図１は本発明方法及び装置の１実施例の構成
を説明するための図である。まず、本実施例の構成を説
明する。図１において１は被処理物を減圧下で処理する
処理室、２，３はそれぞれ処理室１の供給口に接続され
た置換用ガス供給管及び処理用ガス供給管、４，５はそ
れぞれ各ガス供給管２，３に挿設された置換用ガス供給
バルブ及び処理用ガス供給バルブ、９，１０はそれぞれ
各ガス供給バルブ４，５に直列に挿設された流量制御器
である。８は処理室１の排気口に接続された排気管で、
主排気、補助排気バルブ６，７が並列に連結されて挿設
されている。１１は排気管８に接続された真空ポンプで
ある。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram for explaining the configuration of an embodiment of the method and apparatus of the present invention. First, the configuration of this embodiment will be described. In FIG. 1, 1 is a processing chamber for processing an object under reduced pressure, 2 and 3 are replacement gas supply pipes and processing gas supply pipes connected to the supply ports of the processing chamber 1, and 4 and 5 are respectively. The replacement gas supply valve and the processing gas supply valve inserted in the gas supply pipes 2 and 3, and 9 and 10 are flow rate controllers inserted in series to the gas supply valves 4 and 5, respectively. 8 is an exhaust pipe connected to the exhaust port of the processing chamber 1,
Main exhaust and auxiliary exhaust valves 6 and 7 are connected in parallel and inserted. Reference numeral 11 is a vacuum pump connected to the exhaust pipe 8.
【０００７】次に上記構成において本実施例の作用を説
明する。図２は本発明におけるガス置換シーケンスの１
例を示す説明図、図３は同じく成膜シーケンスの１例を
示す説明図である。図３に示すように処理室１に置換用
ガス供給バルブ４を開いて置換用ガスを流しておき、こ
の状態で処理室１内に被処理物を搬入する。しかる後、
図２及び図３に示すように置換用ガスを流しながら補助
排気バルブ７を開き、真空ポンプ１１により排気をｔ1
時点でスタートし、処理室１の圧力を，７６０Torr（大
気圧）から減圧する。Next, the operation of this embodiment having the above structure will be described. FIG. 2 shows one of gas replacement sequences in the present invention.
FIG. 3 is an explanatory diagram showing an example, and FIG. 3 is an explanatory diagram showing one example of the film forming sequence. As shown in FIG. 3, the replacement gas supply valve 4 is opened in the processing chamber 1 to allow the replacement gas to flow, and the object to be processed is carried into the processing chamber 1 in this state. After that,
As shown in FIGS. 2 and 3, the auxiliary exhaust valve 7 is opened while the replacement gas is allowed to flow, and the vacuum pump 11 evacuates the exhaust gas to t 1
At the time point, the pressure in the processing chamber 1 is reduced from 760 Torr (atmospheric pressure).
【０００８】処理室１の圧力がｔ12時点で所定圧力にな
ったら、主排気バルブ６を開き、到達圧力Ｐ1 になるま
で排気する。しかる後、図３に示すようにｔ2 時点で処
理用ガス供給バルブ５を開き、処理用ガスを処理室１に
流し始め、例えば被処理物に成膜する処理をスタート
し、所望の圧力Ｐ2 にして被処理物に成膜する。従来方
法では図４に示すように成膜開始時点ｔ2 で置換用ガス
と処理用ガスを流し始め、それ迄ガスを流していないの
で、ガスの流し始めにガスが処理室１内に突入してガス
流量及び圧力がＱa ，Ｐa で示すように急変するが、本
発明では成膜開始時点ｔ2 前に置換用ガスを流してある
ので、処理用ガスの流し始めにガスが処理室１内に突入
してガス流量及び圧力がＱc ，Ｐc で示すように緩やか
に変化し急変することがないため、処理室１の室壁等に
付着しているパーティクルや不純物を巻き上げることが
殆どなくなり、被処理物にこれらが付着する量を大幅に
軽減できることになる。When the pressure in the processing chamber 1 reaches a predetermined pressure at time t 12 , the main exhaust valve 6 is opened to exhaust the air until the ultimate pressure P 1 is reached. Then, as shown in FIG. 3, at time t 2 , the processing gas supply valve 5 is opened to start flowing the processing gas into the processing chamber 1, for example, the processing for forming a film on the object to be processed is started, and the desired pressure P A film is formed on the object to be treated as 2 . In the conventional method, as shown in FIG. 4, the gas for replacement and the gas for processing are started to flow at the time t 2 of film formation, and the gas has not flowed until then, so the gas rushes into the processing chamber 1 at the beginning of the flow of gas. gas flow rate and pressure Qa, suddenly changes as indicated by Pa Te, but since in the present invention are flowed replacement gas into the film forming start time t 2 before the gas to flow beginning of the processing gas processing chamber 1 Since the gas flow rate and the pressure do not change suddenly and suddenly change as indicated by Qc and Pc, the particles and impurities adhering to the chamber wall of the processing chamber 1 are scarcely taken up, The amount of these adhering to the processed material can be greatly reduced.
【０００９】例えばエピタキシャル成長装置等の置換用
ガスに多量の水素ガスを使用し、処理用ガスとしてＳｉ
Ｈ4 （モノシラン）ガスを使用する場合、処理室（反応
室）の室壁にシリコンポリマーが多量に付着するため、
本発明の場合、減圧プロセスで特に有効であり、従来、
１枚の被処理物に数百個付着していたのを数個にまで大
幅に軽減することができる。又、半導体基板カセットの
ロードロック室等には、機械的機構のパーティクル発生
源，例えば半導体基板搬送機構が存在するため、このよ
うな真空容器の真空不活性ガス置換を行う場合にも本発
明は好適であり、従来、１枚の被処理物に数十個付着し
ていたのを数個に低減することができる。For example, a large amount of hydrogen gas is used as a replacement gas for an epitaxial growth apparatus or the like, and Si is used as a processing gas.
When H 4 (monosilane) gas is used, a large amount of silicon polymer adheres to the wall of the processing chamber (reaction chamber),
In the case of the present invention, it is particularly effective in the depressurization process,
It is possible to significantly reduce the number of hundreds attached to one processing object to several. Further, since a particle generation source of a mechanical mechanism, for example, a semiconductor substrate transfer mechanism is present in the load lock chamber of the semiconductor substrate cassette, the present invention is also applicable to the case of performing vacuum inert gas replacement in such a vacuum container. This is preferable, and it is possible to reduce the number of tens attached to one object to be treated to a few.
【００１０】処理室から処理された被処理物を取り出す
ため、処理室１内をガス置換する場合、処理用ガス供給
バルブ５を閉じてから図２に示すように主排気バルブ６
をｔ3 時点で閉じ、次いでｔ4 時点で補助排気バルブ７
を閉じることになるが、その間、置換用ガスを流しなが
ら減圧排気し、大気圧に戻すことになる。なお、本実施
例では図２から判るように置換用ガス，処理用ガスの全
ガス量は、常に一定の流量になるよう流量制御器９，１
０により制御される。本発明方法及び装置は、減圧式の
ＣＶＤ装置，エピタキシャル成長装置，拡散装置，熱処
理装置等の処理室に適応できることは勿論である。When the inside of the processing chamber 1 is replaced with gas in order to take out the processed object to be processed from the processing chamber, the main gas exhaust valve 6 is closed after the processing gas supply valve 5 is closed as shown in FIG.
Is closed at time t 3 , and then the auxiliary exhaust valve 7 is closed at time t 4.
Will be closed, but during that time, the gas for replacement will be evacuated under reduced pressure while flowing, and returned to atmospheric pressure. In this embodiment, as can be seen from FIG. 2, the flow rate controllers 9 and 1 are controlled so that the total amount of the replacement gas and the processing gas is always constant.
Controlled by 0. It goes without saying that the method and apparatus of the present invention can be applied to a processing chamber such as a reduced pressure CVD apparatus, an epitaxial growth apparatus, a diffusion apparatus, a heat treatment apparatus.
【００１１】[0011]
【発明の効果】上述のように本発明によれば、被処理物
の設置された処理室を，置換用ガスを流しながら大気圧
から所望の処理圧力まで減圧した後、被処理物を処理
し、又処理室をガス置換する場合、置換用ガスを流しな
がら減圧排気し、しかる後大気圧に戻すことを特徴とす
る半導体基板の処理方法及び装置であるから、置換用ガ
スを流しておくことにより処理室の室壁に付着している
パーティクルや不純物が巻き上げられて被処理物に付着
する量を大幅に軽減することができる。As described above, according to the present invention, the processing chamber in which the object to be processed is installed is depressurized from atmospheric pressure to a desired processing pressure while the replacement gas is flowed, and then the object to be processed is processed. In addition, when the processing chamber is gas-replaced, the gas for replacement is evacuated while the gas for replacement is evacuated and then returned to the atmospheric pressure. As a result, the amount of particles and impurities adhering to the chamber wall of the processing chamber can be rolled up and the amount of adhering to the object to be processed can be greatly reduced.
【図１】本発明方法及び装置の１実施例の構成を説明す
るための図である。FIG. 1 is a diagram for explaining the configuration of an embodiment of the method and apparatus of the present invention.
【図２】本発明におけるガス置換シーケンスの１例を示
す説明図である。FIG. 2 is an explanatory diagram showing an example of a gas replacement sequence in the present invention.
【図３】同じく成膜シーケンスの１例を示す説明図であ
る。FIG. 3 is an explanatory diagram showing an example of a film forming sequence.
【図４】従来方法の１例を説明するための図である。FIG. 4 is a diagram for explaining an example of a conventional method.
１ 処理室 ２ 置換用ガス供給管 ３ 処理用ガス供給管 ４ 置換用ガス供給バルブ ５ 処理用ガス供給バルブ ６ 主排気バルブ ７ 補助排気バルブ ８ 排気管 ９ 流量制御器 １０ 流量制御器 １１ 真空ポンプ 1 Processing Chamber 2 Replacement Gas Supply Pipe 3 Processing Gas Supply Pipe 4 Replacement Gas Supply Valve 5 Processing Gas Supply Valve 6 Main Exhaust Valve 7 Auxiliary Exhaust Valve 8 Exhaust Pipe 9 Flow Controller 10 Flow Controller 11 Vacuum Pump
Claims (3)
方法において、処理室を置換用ガスを流しながら大気圧
から所望の処理圧力まで減圧した後、被処理物を処理す
ることを特徴とする半導体基板の処理方法。1. A method of processing an object to be processed in a processing chamber under reduced pressure, wherein the processing object is processed after the pressure is reduced from atmospheric pressure to a desired processing pressure while flowing a replacement gas. And a method for treating a semiconductor substrate.
方法において、被処理物の設置された処理室をガス置換
する場合、置換用ガスを流しながら減圧排気した後、大
気圧に戻すことを特徴とする半導体基板の処理方法。2. In the method of treating an object to be treated in a treatment chamber under reduced pressure, when the treatment chamber in which the object to be treated is placed is gas-replaced, the gas for substitution is flown under reduced pressure and then returned to atmospheric pressure. A method of processing a semiconductor substrate, comprising:
理する装置において、処理室（１）のガス供給口に、置
換用ガス供給管（２）及び処理用ガス供給管（３）をそ
れぞれ接続し、各ガス供給管（２，３）に置換用ガス供
給バルブ（４）及び処理用ガス供給バルブ（５）を挿設
し、処理室（１）の排気口に、主排気，補助排気バルブ
（６，７）を並列に接続して挿設した排気管（８）を接
続してなる半導体基板の処理装置。3. An apparatus for treating an object to be treated in a processing chamber (1) under reduced pressure, wherein a gas supply port of the processing chamber (1) has a replacement gas supply pipe (2) and a processing gas supply pipe ( 3) are connected to each other, and a replacement gas supply valve (4) and a processing gas supply valve (5) are inserted in the respective gas supply pipes (2, 3), and the main outlet is provided at the exhaust port of the processing chamber (1). An apparatus for processing a semiconductor substrate, comprising an exhaust pipe (8) inserted by connecting exhaust and auxiliary exhaust valves (6, 7) in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1966693A JP3197969B2 (en) | 1993-01-11 | 1993-01-11 | Semiconductor substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1966693A JP3197969B2 (en) | 1993-01-11 | 1993-01-11 | Semiconductor substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06208991A true JPH06208991A (en) | 1994-07-26 |
| JP3197969B2 JP3197969B2 (en) | 2001-08-13 |
Family
ID=12005572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1966693A Expired - Lifetime JP3197969B2 (en) | 1993-01-11 | 1993-01-11 | Semiconductor substrate processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3197969B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004146781A (en) * | 2002-10-22 | 2004-05-20 | Samsung Electronics Co Ltd | Vacuum / purge method for load lock chamber for semiconductor device manufacturing |
| JP5436429B2 (en) * | 2008-08-08 | 2014-03-05 | 芝浦メカトロニクス株式会社 | Heat treatment apparatus and heat treatment method |
-
1993
- 1993-01-11 JP JP1966693A patent/JP3197969B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004146781A (en) * | 2002-10-22 | 2004-05-20 | Samsung Electronics Co Ltd | Vacuum / purge method for load lock chamber for semiconductor device manufacturing |
| JP5436429B2 (en) * | 2008-08-08 | 2014-03-05 | 芝浦メカトロニクス株式会社 | Heat treatment apparatus and heat treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3197969B2 (en) | 2001-08-13 |
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