JPH0620055B2 - CVD equipment - Google Patents
CVD equipmentInfo
- Publication number
- JPH0620055B2 JPH0620055B2 JP15144188A JP15144188A JPH0620055B2 JP H0620055 B2 JPH0620055 B2 JP H0620055B2 JP 15144188 A JP15144188 A JP 15144188A JP 15144188 A JP15144188 A JP 15144188A JP H0620055 B2 JPH0620055 B2 JP H0620055B2
- Authority
- JP
- Japan
- Prior art keywords
- cvd
- mesh electrode
- film
- quartz glass
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、メッシュ電極の改良を図ったＣＶＤ装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a CVD apparatus for improving a mesh electrode.
ＣＶＤの手法には、プラズマＣＶＤと光ＣＶＤがある。
前者は成膜速度が早いものの膜表面が荒れるという問題
があるのに対して、後者はその反対に膜質が良好ではあ
るが成膜速度が遅いという問題がある。The CVD method includes plasma CVD and photo-CVD.
The former has a problem that the film surface is rough although the film forming speed is fast, while the latter has a problem that the film quality is good but the film forming speed is slow, on the contrary.
そこで、成膜時にこの両手法の長所を取り込んで、異質
の膜との界面となる部分には光ＣＶＤにより良質の膜を
作成し、他の部分はプラズマＣＶＤの手法により迅速に
成膜することが行われる。Therefore, by taking advantage of these two methods at the time of film formation, a good quality film should be formed by photo-CVD at a portion which becomes an interface with a foreign film, and the other portion should be rapidly formed by a plasma CVD method. Is done.
第２図はその両ＣＶＤ方法を実施できるようしたＣＶＤ
装置の一例を示す図である。このＣＶＤ装置は、光ＣＶ
Ｄの手法を実施する際には、チャンバ１内のホルダ２に
基板３を装着し内部にSi2H6等のガスを入れて、その基
板３をヒータ４で加熱しながらランプ５からの紫外線エ
ネルギーで当該ガスを分解反応させ、基板３の表面に成
膜するものである。FIG. 2 shows a CVD that enables both of the CVD methods to be carried out.
It is a figure which shows an example of an apparatus. This CVD device is a light CV
When the method D is performed, the substrate 3 is mounted on the holder 2 in the chamber 1, a gas such as Si 2 H 6 is put inside, and the substrate 3 is heated by the heater 4 while the ultraviolet light from the lamp 5 is emitted. The gas is decomposed by energy to form a film on the surface of the substrate 3.
このとき、基板３の表面以外の場所、特にランプ５を覆
っている窓材料としての石英ガラス６の面にも膜が形成
されるが、これは基板３を取り去った後に別のガス（例
えばＳＦ６ ）を入れて石英ガラス６の表面に設けたメ
ッシュ電極７とチャンバ１との間に高周波電界を印加し
てプラズマを発生させ、プラズマＣＶＤの手法により、
除去清掃される。At this time, a film is also formed on a place other than the surface of the substrate 3, particularly on the surface of the quartz glass 6 serving as the window material covering the lamp 5, but this is formed by removing another gas (for example, SF gas) after removing the substrate 3. 6 ) and a high frequency electric field is applied between the mesh electrode 7 provided on the surface of the quartz glass 6 and the chamber 1 to generate plasma.
Removed and cleaned.
次に、プラズマＣＶＤにより基板３に成膜する場合に
は、上記光ＣＶＤにおける場合と同様なガスを封入して
ヒータ４で加熱したホルダ２とメッシュ電極７との間に
高周波電解を印加してガスをプラズマ化して行われる。Next, when forming a film on the substrate 3 by plasma CVD, a high-frequency electrolysis is applied between the holder 2 heated by the heater 4 and the mesh electrode 7 by enclosing the same gas as in the case of the photo-CVD. It is performed by converting the gas into plasma.
ところが、上記メッシュ電極７は石英ガラス６の表面に
配置されているのみであり、しかも基板３を加熱するた
めのヒータ４の熱の影響を受けるので、反りが生じて、
プラズマＣＶＤの手法による成膜時に、電解分布が不均
一となり膜厚が不均一となる等の大きな問題が生じる。However, since the mesh electrode 7 is only arranged on the surface of the quartz glass 6 and is affected by the heat of the heater 4 for heating the substrate 3, warpage occurs,
At the time of film formation by the plasma CVD method, there arises a serious problem that the electrolytic distribution becomes nonuniform and the film thickness becomes nonuniform.
本発明はこのような点に鑑みてなされたものであり、そ
の目的は、メッシュ電極に反りが生じないようにして基
板に形成される膜質を低下させないようにすることであ
る。The present invention has been made in view of such a point, and an object thereof is to prevent warpage of the mesh electrode and prevent deterioration of the film quality formed on the substrate.
このために本発明は、光ＣＶＤ用の紫外線照射ランプの
窓材料としての石英ガラス側にプラズマＣＶＤ用のメッ
シュ電極を設けたＣＶＤ装置において、上記メッシュ電
極を上記石英ガラス内に埋込により配置した。Therefore, the present invention is a CVD apparatus in which a mesh electrode for plasma CVD is provided on the quartz glass side as a window material of an ultraviolet irradiation lamp for photo CVD, and the mesh electrode is arranged by being embedded in the quartz glass. .
以下、本発明の実施例について説明する。第１図はその
一実施例のメッシュ電極１０を示す図である。この実施
例では、メッシュ電極１０の材質を熱膨張のほとんどな
いインバー合金として、これを石英ガラス６の内部に埋
込により配置した。Examples of the present invention will be described below. FIG. 1 is a diagram showing a mesh electrode 10 of the embodiment. In this embodiment, the material of the mesh electrode 10 is an Invar alloy having almost no thermal expansion, and the mesh electrode 10 is embedded in the quartz glass 6.
このインバー合金としては、一般的にＦｅ−Ｎｉ合金が
ある。他には、Ｆｅ−Ｎｉ−Ｃｒ、Ｆｅ−Ｐｔ、Ｆｅ−
Ｐｄ、Ｆｅ−Ｎｉ−Ｍｎ等があり、Ｆｅを中心とした強
磁性を有する合金が使用される。The Invar alloy is generally a Fe-Ni alloy. Besides, Fe-Ni-Cr, Fe-Pt, Fe-
There are Pd, Fe-Ni-Mn, etc., and an alloy having ferromagnetism centering on Fe is used.
かくして、この実施例では、石英ガラス６そのものが熱
伝導率が小さく、しかもこの中にメッシュ電極１０を埋
め込み、更にそのメッシュ電極１０の材質を熱膨張のほ
とんどないインバー金属としたので、当該メッシュ電極
１０が熱の影響を受けて変形ることはなく、プラズマＣ
ＶＤ時に印加する高周波電解が不均一となることを防止
することができ、膜質を劣化させる虞はない。Thus, in this embodiment, since the quartz glass 6 itself has a small thermal conductivity, the mesh electrode 10 is embedded therein, and the material of the mesh electrode 10 is the Invar metal with almost no thermal expansion. 10 does not deform under the influence of heat, and plasma C
It is possible to prevent the high frequency electrolysis applied during VD from becoming non-uniform, and there is no risk of degrading the film quality.
以上のように本発明によれば、メッシュ電極の変形を防
止でき、膜質低下を防止できるという利点がある。As described above, according to the present invention, there is an advantage that the deformation of the mesh electrode can be prevented and the deterioration of the film quality can be prevented.
第１図は本発明の一実施例のメッシュ電極の説明図、第
２図はＣＶＤ装置の説明図である。 ６……石英ガラス、１０……メッシュ電極。FIG. 1 is an illustration of a mesh electrode according to an embodiment of the present invention, and FIG. 2 is an illustration of a CVD apparatus. 6 ... Quartz glass, 10 ... Mesh electrode.
Claims (2)
しての石英ガラス側にプラズマＣＶＤ用のメッシュ電極
を設けたＣＶＤ装置において、 上記メッシュ電極を上記石英ガラス内に埋込により配置
したことを特徴とするＣＶＤ装置。1. A CVD apparatus in which a mesh electrode for plasma CVD is provided on the side of quartz glass as a window material of an ultraviolet irradiation lamp for photo CVD, wherein the mesh electrode is embedded in the quartz glass. Characteristic CVD equipment.
を材質とすることを特徴とする特許請求の範囲第１項記
載のＣＶＤ装置。2. The CVD apparatus according to claim 1, wherein the mesh electrode is made of a metal having a small thermal expansion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15144188A JPH0620055B2 (en) | 1988-06-20 | 1988-06-20 | CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15144188A JPH0620055B2 (en) | 1988-06-20 | 1988-06-20 | CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01318232A JPH01318232A (en) | 1989-12-22 |
| JPH0620055B2 true JPH0620055B2 (en) | 1994-03-16 |
Family
ID=15518675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15144188A Expired - Lifetime JPH0620055B2 (en) | 1988-06-20 | 1988-06-20 | CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620055B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0680075B1 (en) * | 1993-11-18 | 2001-11-28 | Ngk Insulators, Ltd. | Electrode for generating plasma and method for manufacturing the electrode |
-
1988
- 1988-06-20 JP JP15144188A patent/JPH0620055B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01318232A (en) | 1989-12-22 |
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