JPH0619961B2 - Microwave ion source - Google Patents
Microwave ion sourceInfo
- Publication number
- JPH0619961B2 JPH0619961B2 JP58239753A JP23975383A JPH0619961B2 JP H0619961 B2 JPH0619961 B2 JP H0619961B2 JP 58239753 A JP58239753 A JP 58239753A JP 23975383 A JP23975383 A JP 23975383A JP H0619961 B2 JPH0619961 B2 JP H0619961B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- discharge chamber
- ion source
- generated
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 17
- 238000010884 ion-beam technique Methods 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明はマイクロ波イオン源に係り、特にmA級のイオ
ンビームを引き出せる大電流イオン打込み装置に好適な
マイクロ波イオン源に関する。Description: FIELD OF THE INVENTION The present invention relates to a microwave ion source, and more particularly to a microwave ion source suitable for a high-current ion implanter capable of extracting a mA-class ion beam.
第1図に従来のマイクロ波イオン源の構成を示す。 FIG. 1 shows the configuration of a conventional microwave ion source.
従来のマイクロ波イオン源は、放電室5内に磁界を発生
させるたの空心ソレノイドコイル8がアース電位の位置
に置かれ、放電室5の電位は引き出されるイオンビーム
21の加速電位と同電位に置かれていた。このため、イ
オンビーム21を引き出すための電界のかかった空間に
も磁界が存在し、この空間で、引き出し電極間の異常放
電が発生しやすいという欠点があった。また、放電室5
と空心ソレノイドコイル8は電気的に絶縁(例えば耐電
圧80KV)する必要があるため、大きく離れた位置に
置かなければならなかった。そのため、空心ソレノイド
コイル8は大きくなるざるを得ず、印加する電力も大き
いという欠点があった。In the conventional microwave ion source, the air-core solenoid coil 8 for generating a magnetic field in the discharge chamber 5 is placed at the ground potential position, and the potential of the discharge chamber 5 becomes the same potential as the accelerating potential of the extracted ion beam 21. It was placed. For this reason, there is a drawback that a magnetic field exists in a space to which an electric field for extracting the ion beam 21 is applied, and abnormal discharge between the extraction electrodes easily occurs in this space. Also, the discharge chamber 5
Since the air-core solenoid coil 8 needs to be electrically insulated (for example, withstand voltage of 80 KV), it has to be placed at a large distance. Therefore, the air-core solenoid coil 8 is inevitably large, and there is a drawback that the applied power is large.
本発明の目的は、イオンビームを引き出す空間での異常
放電が発生しにくくすると共に、放電室に発生させる磁
界を低電力で発生できるマイクロ波イオン源を提供する
にある。It is an object of the present invention to provide a microwave ion source that makes it difficult for an abnormal discharge to occur in a space for extracting an ion beam and that can generate a magnetic field generated in a discharge chamber with low power.
イオンビームを引き出す空間に磁界を存在させないこ
と、また、磁界発生器を放電室の近くに持ってくること
が、上記目的を解決策となる。The absence of a magnetic field in the space for extracting the ion beam, and bringing the magnetic field generator near the discharge chamber are solutions to the above object.
本発明では、放電室に磁界を発生させるための永久磁石
あるいは電磁石を放電室と同電位の位置に置くと共に、
放電室の近傍にのみ磁界が発生し、イオンビームを引き
出す空間には磁界が発生しないよう、高透磁率部材の磁
路で放電室の周りを囲んだことを特徴とする。In the present invention, a permanent magnet or an electromagnet for generating a magnetic field in the discharge chamber is placed at the same potential as the discharge chamber,
The discharge chamber is surrounded by a magnetic path of a high magnetic permeability member so that a magnetic field is generated only near the discharge chamber and no magnetic field is generated in the space for extracting the ion beam.
以下、本発明の一実施例を第2図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
該図に示す如く、マイクロ波イオン源は、マイクロ波発
生器1,導波管2,マイクロ波導入フランジ3,放電室
5,ガス導入管6,磁界発生器8,イオンビーム引き出
し電極系7で構成されている。As shown in the figure, the microwave ion source includes a microwave generator 1, a waveguide 2, a microwave introduction flange 3, a discharge chamber 5, a gas introduction tube 6, a magnetic field generator 8, and an ion beam extraction electrode system 7. It is configured.
マイクロ波発生器1で発生したマイクロ波は、矩形導波
管2a,2b、マイクロ波導入フランジ3を経由して放
電室5に導入され、放電室5内にマイクロ波電界を発生
させる。さらに、放電室5の付近には、放電室5を囲む
ように置かれたソレノイドコイル8a,純鉄製の磁路8
b,放電室5内の磁場分布を制御するための補助磁極8
cからなる磁界発生器により、マイクロ波電界を直交す
る方向に磁界が印加される。この状態で、イオン化すべ
きガスをガス導入管6より放電室5内に導入し、放電室
5内に形成されているマイクロ波電界と磁界との相互作
用で、プラズマを発生させ、イオンビーム引き出し電極
系7a,7b,7cにより、上記プラズマからイオンビ
ーム21が引き出される。Microwaves generated by the microwave generator 1 are introduced into the discharge chamber 5 via the rectangular waveguides 2a and 2b and the microwave introduction flange 3, and a microwave electric field is generated in the discharge chamber 5. Further, in the vicinity of the discharge chamber 5, a solenoid coil 8a placed so as to surround the discharge chamber 5 and a magnetic path 8 made of pure iron.
b, auxiliary magnetic pole 8 for controlling the magnetic field distribution in the discharge chamber 5
The magnetic field generator composed of c applies a magnetic field in a direction orthogonal to the microwave electric field. In this state, the gas to be ionized is introduced into the discharge chamber 5 through the gas introduction pipe 6, and the interaction between the microwave electric field and the magnetic field formed in the discharge chamber 5 causes plasma to be generated and the ion beam to be extracted. An ion beam 21 is extracted from the plasma by the electrode systems 7a, 7b, 7c.
本実施例によれば、イオンビーム引き出し空間への磁界
の洩れを数ガウス以下(放電室内600ガウス時)にお
さえることができ、イオンビームを引き出す空間での異
常放電が発生しにくくなり、80KVでのイオンビーム
引き出しが容易に行える。また、ソレノイドコイル8a
に印加する電力も、従来1200W位必要であったのに
対し、300W以下で済むようになり、放電室に発生さ
せる磁界を低電力で発生できる。According to the present embodiment, the leakage of the magnetic field into the ion beam extraction space can be suppressed to several Gauss or less (at 600 Gauss in the discharge chamber), and the abnormal discharge is less likely to occur in the ion beam extraction space. The ion beam can be easily extracted. Also, the solenoid coil 8a
Conventionally, the electric power to be applied to 1,200 W has been required to be about 1200 W, whereas the electric power to be applied is 300 W or less, and the magnetic field generated in the discharge chamber can be generated with low electric power.
以上の説明した本発明のマイクロ波イオン源によれば、
イオンビーム引き出し空間での異常放電を少なくすると
共に、磁界発生器に投入する電力をも少なくすることが
できる。According to the microwave ion source of the present invention described above,
It is possible to reduce abnormal electric discharge in the ion beam extraction space and also reduce electric power supplied to the magnetic field generator.
第1図は従来のマイクロ波イオン源の構成を示す断面
図、第2図は本発明によるマイクロ波イオン源の一実施
例を示す断面図である。 1……マイクロ波発生器、2a,2b……矩形導波器、
3……マイクロ波導入フランジ、4……放電電極、5…
…放電室、6……ガス導入管、7a,7b,7c……イ
オンビーム引き出し電極系、8,8a……ソレノイドコ
イル、8b……磁路、8c……補助磁極、11……放電
電極内に放電室を形成するための誘電体充填物、12…
…絶縁碍子。FIG. 1 is a sectional view showing the structure of a conventional microwave ion source, and FIG. 2 is a sectional view showing an embodiment of the microwave ion source according to the present invention. 1 ... Microwave generator, 2a, 2b ... rectangular director,
3 ... Microwave introduction flange, 4 ... Discharge electrode, 5 ...
... Discharge chamber, 6 ... Gas introduction tube, 7a, 7b, 7c ... Ion beam extraction electrode system, 8, 8a ... Solenoid coil, 8b ... Magnetic path, 8c ... Auxiliary magnetic pole, 11 ... In discharge electrode A dielectric filling for forming a discharge chamber in
… Insulators.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 関 孝義 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 小笹 進 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 岡田 修身 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 昭和57年6月7日から6月9日にかけて イオン工学懇談会主催、電気学会電子デバ イス技術委員会共催により、東京野口英世 記念会館に於いて開催された「イオン源と イオンを基礎とした応用技術」と題した第 6回シンポジウムのための講演予稿集(昭 和57年6月6日発行).P.25〜28 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Takayoshi Seki, 1-280 Higashi Koigakubo, Kokubunji City, Tokyo Metropolitan Research Laboratory, Hitachi, Ltd. (72) Inventor Susumu Kosasa 1-280 Higashi Koigakubo, Kokubunji City, Tokyo Hitachi, Ltd. In the Central Research Laboratory (72) Inventor, Shuji Okada 1-280, Higashi Koigakubo, Kokubunji City, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd. (56) References Sponsored by Ion Engineering Conference, June 7th to June 9th, 1982, Proceedings for the 6th symposium entitled "Ion Source and Applied Technology Based on Ions" held at Hideyo Noguchi Memorial Hall, Tokyo, co-sponsored by The Institute of Electrical Engineers, Electronic Devices Technical Committee Published June 6, 1957). P. 25-28
Claims (2)
は電磁石で発生した磁界とを作用させて作られたプラズ
マからイオンを引き出すマイクロ波イオン源において、 上記磁界を発生させるための永久磁石あるいは電磁石
を,上記プラズマを形成する放電室と同電位の位置に置
くと共に、上記放電室の近傍にのみ磁界が発生し、イオ
ンビームを引き出す空間には磁界が発生しないよう上記
放電室の周りを高透磁率部材の磁路で囲んだことを特徴
とするマイクロ波イオン源。1. A microwave ion source for extracting ions from plasma produced by the action of an electric field generated by microwaves and a magnetic field generated by a permanent magnet or an electromagnet, wherein a permanent magnet or an electromagnet for generating the magnetic field is used. , The magnetic field is generated only in the vicinity of the discharge chamber where the plasma is formed, and the magnetic field is generated only in the vicinity of the discharge chamber, and the magnetic field is not generated in the space for extracting the ion beam. A microwave ion source characterized by being surrounded by a magnetic path of a member.
に、上記放電室内部の磁場分布を制御するための補助磁
極を取付けたことを特徴とする特許請求の範囲第1項記
載のマイクロ波イオン源。2. The auxiliary magnetic pole for controlling the magnetic field distribution inside the discharge chamber is attached to the tip of the magnetic path formed of the high magnetic permeability member. Microwave ion source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58239753A JPH0619961B2 (en) | 1983-12-21 | 1983-12-21 | Microwave ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58239753A JPH0619961B2 (en) | 1983-12-21 | 1983-12-21 | Microwave ion source |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60133646A JPS60133646A (en) | 1985-07-16 |
JPH0619961B2 true JPH0619961B2 (en) | 1994-03-16 |
Family
ID=17049409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58239753A Expired - Lifetime JPH0619961B2 (en) | 1983-12-21 | 1983-12-21 | Microwave ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0619961B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012080650A1 (en) * | 2010-12-15 | 2012-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electron cyclotron resonance ion source device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63257166A (en) * | 1987-04-13 | 1988-10-25 | Nippon Telegr & Teleph Corp <Ntt> | Microwave ion source |
JP4289837B2 (en) | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | Ion implantation method and method for manufacturing SOI wafer |
JP4328067B2 (en) | 2002-07-31 | 2009-09-09 | アプライド マテリアルズ インコーポレイテッド | Ion implantation method, SOI wafer manufacturing method, and ion implantation apparatus |
FR3015109A1 (en) * | 2013-12-13 | 2015-06-19 | Centre Nat Rech Scient | ION SOURCE WITH ELECTRONIC CYCLOTRONIC RESONANCE |
-
1983
- 1983-12-21 JP JP58239753A patent/JPH0619961B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
昭和57年6月7日から6月9日にかけてイオン工学懇談会主催、電気学会電子デバイス技術委員会共催により、東京野口英世記念会館に於いて開催された「イオン源とイオンを基礎とした応用技術」と題した第6回シンポジウムのための講演予稿集(昭和57年6月6日発行).P.25〜28 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012080650A1 (en) * | 2010-12-15 | 2012-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electron cyclotron resonance ion source device |
FR2969371A1 (en) * | 2010-12-15 | 2012-06-22 | Commissariat Energie Atomique | ELECTRONIC CYCLOTRON RESONANCE ION GENERATING DEVICE |
Also Published As
Publication number | Publication date |
---|---|
JPS60133646A (en) | 1985-07-16 |
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