JPH06194533A - Waveguide element for optical amplification - Google Patents
Waveguide element for optical amplificationInfo
- Publication number
- JPH06194533A JPH06194533A JP4346685A JP34668592A JPH06194533A JP H06194533 A JPH06194533 A JP H06194533A JP 4346685 A JP4346685 A JP 4346685A JP 34668592 A JP34668592 A JP 34668592A JP H06194533 A JPH06194533 A JP H06194533A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- refractive index
- optical amplification
- substrate
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 title claims abstract description 27
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000010287 polarization Effects 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 10
- -1 rare earth ions Chemical class 0.000 claims abstract description 10
- 229910001415 sodium ion Inorganic materials 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims description 5
- 238000005342 ion exchange Methods 0.000 abstract description 11
- 238000009826 distribution Methods 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000001902 propagating effect Effects 0.000 abstract description 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910001414 potassium ion Inorganic materials 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 235000010344 sodium nitrate Nutrition 0.000 description 2
- 239000004317 sodium nitrate Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Light Guides In General And Applications Therefor (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、誘導放出を利用した光
増幅用システムに用いられる光導波路素子に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical waveguide device used in an optical amplification system utilizing stimulated emission.
【０００２】[0002]
【従来の技術】従来、光導波路により光増幅用素子を作
製する方法としては、増幅作用を有する元素を含むガラ
ス基板中に、２段階熱イオン交換法により光導波路を形
成するものがある。2. Description of the Related Art Conventionally, as a method of manufacturing an optical amplification element by an optical waveguide, there is a method of forming an optical waveguide by a two-step thermal ion exchange method in a glass substrate containing an element having an amplifying effect.
【０００３】例えば、図３に示したようにネオジウムイ
オンをドープさせたＢＫ−７ガラス基板３１にマスクを
形成し、それをパターニングした後に、まず溶融硝酸カ
リウム塩中で、続いて溶融硝酸ナトリウム塩中でイオン
交換を行い導波路を作製した例がある。For example, as shown in FIG. 3, after forming a mask on a BK-7 glass substrate 31 doped with neodymium ions and patterning it, first in a molten potassium nitrate salt, and subsequently in a molten sodium nitrate salt. There is an example in which a waveguide is produced by performing ion exchange in.
【０００４】この場合、ガラス基板中のナトリウムイオ
ンと溶融塩中のカリウムイオンの交換により半円状の高
屈折率部分が形成され、さらに次のイオン交換により基
板最表面のカリウムイオンが溶融塩中のナトリウムイオ
ンと置き換えられて、断面が楕円形状の埋め込み導波路
３２が形成される。この導波路に、励起光を入射させて
ネオジウムイオンを励起し、そこに信号光を入射させる
と誘導放出により信号光が増幅される。In this case, a semi-circular high refractive index portion is formed by exchanging sodium ions in the glass substrate and potassium ions in the molten salt, and further ion exchange causes the potassium ions on the outermost surface of the substrate to be in the molten salt. By replacing the sodium ion with the above-mentioned sodium ion, the buried waveguide 32 having an elliptical cross section is formed. When excitation light is incident on this waveguide to excite neodymium ions and signal light is incident thereon, the signal light is amplified by stimulated emission.
【０００５】[0005]
【発明が解決しようとする問題点】光増幅用素子を光通
信システムで使用する場合、その特性に偏光依存性がな
いことが要求される。これは、光ファイバ中を信号光が
伝搬するときに偏光方向が一般に保存されないため、様
々な偏光状態の信号光を増幅する必要があるからであ
る。When an optical amplification element is used in an optical communication system, it is required that its characteristics have no polarization dependence. This is because the polarization direction is not generally preserved when the signal light propagates in the optical fiber, and therefore it is necessary to amplify the signal light in various polarization states.
【０００６】ところが、従来技術のところで述べた導波
路は、高屈折部分の形成にカリウムイオンとナトリウム
イオンの交換を利用しているため、両者のイオン半径の
差から基板表面に平行な応力が発生していること、およ
び熱イオン交換法で作製しているため、導波路断面形状
が楕円で屈折率分布が非対称であることから、これらに
起因する偏光方向依存性が生じている。However, since the waveguide described in the prior art utilizes exchange of potassium ions and sodium ions to form the high refraction portion, stress parallel to the substrate surface is generated due to the difference in ion radius between the two. The fact that the waveguide cross section is elliptical and the refractive index distribution is asymmetric because it is manufactured by the thermionic exchange method, the polarization direction dependence is caused by these.
【０００７】たとえば、このような導波路におけるＴ
Ｅ，ＴＭモードの等価屈折率には０．００１程度の差が
あり、それが光増幅素子として使用した場合に両モード
に対する増幅度の違いとなって現れる。For example, T in such a waveguide
There is a difference of about 0.001 in the equivalent refractive index between the E and TM modes, which appears as a difference in amplification degree for both modes when used as an optical amplification element.
【０００８】そこで本発明は、偏光依存性のない光増幅
用導波路素子を提供することを目的とする。Therefore, an object of the present invention is to provide an optical amplification waveguide element having no polarization dependence.
【０００９】[0009]
【問題を解決するための手段】上記目的は、基板中に光
増幅作用を有する元素を含むか、または当該元素を含む
増幅部分を備え、かつその周囲より高い屈折率を有する
導波路部分を備えた光増幅用導波路素子において、導波
路部分の特性が偏光方向に依存しないことを特徴とする
光増幅用導波路素子にて達成される。The above object is to provide an amplifying portion containing an element having a light amplifying effect in a substrate or having an amplifying portion containing the element, and to provide a waveguide portion having a higher refractive index than its surroundings. In the optical amplification waveguide element, the optical amplification waveguide element is characterized in that the characteristics of the waveguide portion do not depend on the polarization direction.
【００１０】さらにその導波路として、ガラス基板中の
ナトリウムイオンを銀イオンに一部置き換えたもの、導
波光のニアフィールドパターンが円形であるものを使用
する光増幅用導波路素子にて達成される。Further, the waveguide can be achieved by a waveguide element for optical amplification using a glass substrate in which sodium ions are partially replaced by silver ions and a near field pattern of guided light is circular. .
【００１１】[0011]
【作用】本発明において使用される導波路のＴＥ，ＴＭ
モード間の等価屈折率差は、１０-6程度以下と小さいた
め、事実上偏光依存性はないものとみなせる。したがっ
て、偏光依存性のない導波路型光増幅素子を得ることが
できる。The TE, TM of the waveguide used in the present invention
Since the equivalent refractive index difference between modes is as small as about 10 −6 or less, it can be considered that there is virtually no polarization dependence. Therefore, it is possible to obtain a waveguide type optical amplification element having no polarization dependence.
【００１２】[0012]
【実施例】以下本発明を、実施例に基づいてさらに詳し
く説明する。図１は、本発明による光増幅用素子の断面
図を示す。基板１は、希土類イオンがドープされたガラ
ス基板で、表面から約１０μｍ以上の深さに信号光に対
して単一モードな導波路２が埋め込まれている。この導
波路の屈折率分布は対称であり、ここを伝搬する信号光
のニアフィールドパターンは、円形であることを特徴と
する。この導波路は、ナトリウムイオンと銀イオンの交
換によって形成された高屈折率部分を、さらに電界イオ
ン交換で埋め込んだもので、イオン半径の差による応力
が小さく、屈折率分布が対称なために、ＴＥ，ＴＭモー
ド間の等価屈折率差は１０-6程度以下である。The present invention will be described in more detail based on the following examples. FIG. 1 shows a sectional view of an optical amplification element according to the present invention. The substrate 1 is a glass substrate doped with rare earth ions, and a single mode waveguide 2 for signal light is embedded at a depth of about 10 μm or more from the surface. The refractive index distribution of this waveguide is symmetric, and the near-field pattern of the signal light propagating therethrough is circular. This waveguide is a high-refractive-index portion formed by the exchange of sodium ions and silver ions, which is further embedded by field ion exchange. Since the stress due to the difference in ionic radius is small and the refractive index distribution is symmetric, The equivalent refractive index difference between the TE and TM modes is about 10 −6 or less.
【００１３】図２には、この素子の作製プロセスを示
す。まず、原料に酸化エルビウムを１重量％含むソーダ
ガラス基板１の表面に、真空蒸着法あるいはスパッタ法
で厚さ３００ｎｍのチタン膜マスク３を形成し、これに
フォトリソグラフィー法によって、幅３μｍの導波路パ
ターン開口部４を開ける。次にこの基板１を溶融硝酸銀
塩５中に入れ、マスク開口部４から銀イオンを基板内部
にイオン交換により拡散させて、断面が半円形の高屈折
率部分６を形成する。さらにマスク３を除去したのち、
溶融硝酸ナトリウム塩７中で、電源８により１５０Ｖ／
ｍｍの電界を印加しながら、イオン交換により高屈折率
部分６を基板１内に埋め込み、導波路２とする。FIG. 2 shows a manufacturing process of this element. First, a titanium film mask 3 having a thickness of 300 nm is formed on the surface of a soda glass substrate 1 containing 1% by weight of erbium oxide as a raw material by a vacuum deposition method or a sputtering method, and a waveguide having a width of 3 μm is formed on the titanium film mask 3 by a photolithography method. The pattern opening 4 is opened. Next, the substrate 1 is put into a molten silver nitrate 5 and silver ions are diffused from the mask opening 4 into the substrate by ion exchange to form a high refractive index portion 6 having a semicircular cross section. After removing the mask 3,
150 V / in a molten sodium nitrate 7 by a power supply 8
While applying an electric field of mm, the high refractive index portion 6 is embedded in the substrate 1 by ion exchange to form the waveguide 2.
【００１４】このようにして形成した光増幅用導波路素
子に、３００ｍＷの励起光（波長０．９８μｍ）を入射
させると同時に信号光（波長１．５５μｍ）を入射させ
たところ、信号光に対して約０．５ｄＢ／ｃｍの増幅作
用が得られた。また、このときのＴＥ，ＴＭモードに対
する増幅度の差は、０．００１ｄＢ／ｃｍ以下であっ
た。When 300 mW of pumping light (wavelength 0.98 μm) was made to enter the optical amplification waveguide element thus formed and signal light (wavelength 1.55 μm) was made to enter at the same time, As a result, an amplification effect of about 0.5 dB / cm was obtained. The difference in amplification degree between the TE and TM modes at this time was 0.001 dB / cm or less.
【００１５】本実施例では、イオン交換により基板に応
力が生じるのを防ぐため、ナトリウムイオンと銀イオン
のイオン交換により高屈折率部分を形成したが、イオン
半径の近いこれ以外の組合せを使っても、同様の効果が
得られることは明白である。In this embodiment, in order to prevent stress from being generated in the substrate due to ion exchange, the high refractive index portion is formed by ion exchange of sodium ion and silver ion. However, other combinations having close ion radii are used. However, it is clear that the same effect can be obtained.
【００１６】例えば、カリウムイオンとタリウムイオン
のイオン交換でも良い。また、導波路の作製方法として
もイオン交換法に限られたものではなく、応力が発生し
なければＣＶＤ法などで作製してもよい。For example, ion exchange between potassium ion and thallium ion may be used. Further, the method for producing the waveguide is not limited to the ion exchange method, and may be produced by the CVD method or the like as long as no stress is generated.
【００１７】[0017]
【発明の効果】本発明によれば、偏光依存性のない導波
路型光増幅素子を得ることができ、これを使った光増幅
素子の偏光方向依存性を除去することが可能である。According to the present invention, it is possible to obtain a waveguide type optical amplification element having no polarization dependency, and it is possible to eliminate the polarization direction dependency of an optical amplification element using the same.
【図１】本発明の実施例による偏光依存性のない導波路
型光増幅素子の断面図である。FIG. 1 is a cross-sectional view of a waveguide type optical amplification element having no polarization dependence according to an embodiment of the present invention.
【図２】本発明の作製プロセスを示す図である。FIG. 2 is a diagram showing a manufacturing process of the present invention.
【図３】従来の導波路型光増幅素子の断面図である。FIG. 3 is a sectional view of a conventional waveguide type optical amplification element.
１ エルビウムドープガラス基板 ２ 埋め込み単一モード導波路 ３ マスク ４ パターン開口部 ５ 溶融硝酸銀塩 ６ 高屈折率部分 ７ 溶融硝酸ナトリウム塩 ８ 電源 ３１ ＢＫ−７ガラス基板 ３２ 楕円形埋め込み導波路 1 Erbium Doped Glass Substrate 2 Embedded Single Mode Waveguide 3 Mask 4 Pattern Opening 5 Molten Silver Nitrate 6 High Refractive Index Part 7 Molten Sodium Nitrate 8 Power Supply 31 BK-7 Glass Substrate 32 Elliptical Embedded Waveguide
Claims (3)
か、または当該元素を含む増幅部分を備え、かつその周
囲より高い屈折率を有する導波路部分を備えた光増幅用
導波路素子において、導波路部分の特性が偏光方向に依
存しないことを特徴とする光増幅用導波路素子。1. A waveguide element for optical amplification, comprising: a substrate containing an element having an optical amplification effect, or an amplification portion containing the element, and a waveguide portion having a refractive index higher than that of the surrounding area. A waveguide element for optical amplification, wherein the characteristics of the waveguide portion do not depend on the polarization direction.
ラス基板中のナトリウムイオンを銀イオンに一部置き換
えたものを使用する光増幅用導波路素子。2. A waveguide element for optical amplification, wherein the waveguide according to claim 1 uses a glass substrate in which sodium ions are partially replaced with silver ions.
波光のニアフィールドパターンが円形であるものを使用
する光増幅用導波路素子。3. A waveguide element for optical amplification, wherein a waveguide having a circular near-field pattern is used as the waveguide of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4346685A JPH06194533A (en) | 1992-12-25 | 1992-12-25 | Waveguide element for optical amplification |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4346685A JPH06194533A (en) | 1992-12-25 | 1992-12-25 | Waveguide element for optical amplification |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06194533A true JPH06194533A (en) | 1994-07-15 |
Family
ID=18385126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4346685A Pending JPH06194533A (en) | 1992-12-25 | 1992-12-25 | Waveguide element for optical amplification |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06194533A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003077383A1 (en) * | 2002-03-13 | 2003-09-18 | Nikon Corporation | Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device |
| US7024093B2 (en) | 2002-12-02 | 2006-04-04 | Shipley Company, Llc | Methods of forming waveguides and waveguides formed therefrom |
| US7524781B2 (en) | 2003-06-20 | 2009-04-28 | Asahi Glass Company, Limited | Non-lead optical glass and optical fiber |
-
1992
- 1992-12-25 JP JP4346685A patent/JPH06194533A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003077383A1 (en) * | 2002-03-13 | 2003-09-18 | Nikon Corporation | Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device |
| US7024093B2 (en) | 2002-12-02 | 2006-04-04 | Shipley Company, Llc | Methods of forming waveguides and waveguides formed therefrom |
| US7524781B2 (en) | 2003-06-20 | 2009-04-28 | Asahi Glass Company, Limited | Non-lead optical glass and optical fiber |
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