JPH06163495A - Semiconductor wafer treatment liquid - Google Patents
Semiconductor wafer treatment liquidInfo
- Publication number
- JPH06163495A JPH06163495A JP4310711A JP31071192A JPH06163495A JP H06163495 A JPH06163495 A JP H06163495A JP 4310711 A JP4310711 A JP 4310711A JP 31071192 A JP31071192 A JP 31071192A JP H06163495 A JPH06163495 A JP H06163495A
- Authority
- JP
- Japan
- Prior art keywords
- group
- semiconductor wafer
- ring group
- radical
- aqueous solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 18
- 239000003125 aqueous solvent Substances 0.000 claims abstract description 17
- 150000007857 hydrazones Chemical class 0.000 claims abstract description 14
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 5
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 12
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 7
- 125000000623 heterocyclic group Chemical group 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 125000002252 acyl group Chemical group 0.000 claims description 5
- 125000002723 alicyclic group Chemical group 0.000 claims description 5
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 24
- 239000002184 metal Substances 0.000 abstract description 23
- 229910052751 metal Inorganic materials 0.000 abstract description 23
- 239000007864 aqueous solution Substances 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 abstract description 3
- 229960001231 choline Drugs 0.000 abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract 3
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 43
- 238000004140 cleaning Methods 0.000 description 12
- -1 thyron Chemical compound 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 7
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 125000000542 sulfonic acid group Chemical group 0.000 description 3
- FTNJQNQLEGKTGD-UHFFFAOYSA-N 1,3-benzodioxole Chemical group C1=CC=C2OCOC2=C1 FTNJQNQLEGKTGD-UHFFFAOYSA-N 0.000 description 2
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- HCCNHYWZYYIOFM-UHFFFAOYSA-N 3h-benzo[e]benzimidazole Chemical group C1=CC=C2C(N=CN3)=C3C=CC2=C1 HCCNHYWZYYIOFM-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical group C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 2
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 2
- KXNQKOAQSGJCQU-UHFFFAOYSA-N benzo[e][1,3]benzothiazole Chemical group C1=CC=C2C(N=CS3)=C3C=CC2=C1 KXNQKOAQSGJCQU-UHFFFAOYSA-N 0.000 description 2
- BNBQRQQYDMDJAH-UHFFFAOYSA-N benzodioxan Chemical group C1=CC=C2OCCOC2=C1 BNBQRQQYDMDJAH-UHFFFAOYSA-N 0.000 description 2
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 125000000259 cinnolinyl group Chemical group N1=NC(=CC2=CC=CC=C12)* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 125000003453 indazolyl group Chemical group N1N=C(C2=C1C=CC=C2)* 0.000 description 2
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 125000002971 oxazolyl group Chemical group 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 2
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical group C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical group C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 2
- 125000003373 pyrazinyl group Chemical group 0.000 description 2
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MDYOLVRUBBJPFM-UHFFFAOYSA-N tropolone Chemical compound OC1=CC=CC=CC1=O MDYOLVRUBBJPFM-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- ONMQTBAZJCLANT-UHFFFAOYSA-N C1=CC=CC2=C3NOOC3=CC=C21 Chemical group C1=CC=CC2=C3NOOC3=CC=C21 ONMQTBAZJCLANT-UHFFFAOYSA-N 0.000 description 1
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical group C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical group C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 125000004442 acylamino group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000480 butynyl group Chemical group [*]C#CC([H])([H])C([H])([H])[H] 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001162 cycloheptenyl group Chemical group C1(=CCCCCC1)* 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000003678 cyclohexadienyl group Chemical group C1(=CC=CCC1)* 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000522 cyclooctenyl group Chemical group C1(=CCCCCCC1)* 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000532 dioxanyl group Chemical group 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 125000000346 malonyl group Chemical group C(CC(=O)*)(=O)* 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000005394 methallyl group Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003452 oxalyl group Chemical group *C(=O)C(*)=O 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005981 pentynyl group Chemical group 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000004149 thio group Chemical group *S* 0.000 description 1
- 125000004044 trifluoroacetyl group Chemical group FC(C(=O)*)(F)F 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハ表面を清
浄な状態にする洗浄液等の半導体ウエハ処理液に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer processing liquid such as a cleaning liquid that cleans the surface of a semiconductor wafer.
【０００２】[0002]
【従来の技術】近年、各種デバイスの高集積化に伴い、
その基板となる半導体ウエハの表面を清浄化することが
強く望まれている。2. Description of the Related Art In recent years, with high integration of various devices,
It is strongly desired to clean the surface of the semiconductor wafer that is the substrate.
【０００３】すなわち、一般にシリコン等の半導体ウエ
ハは、インゴットから円盤状に切り出された後、ラッピ
ング、エッチング、ポリッシング及び洗浄の各工程を経
て、加工歪や汚染物質が除去された平滑な表面の製品と
なる。これらの各工程中、例えば汚染物質を除去する洗
浄の工程で不具合があると、半導体ウエハ表面にシリコ
ン粒子、塵等のパ―ティクル（微粒子汚染物質）や金属
不純物が残ることになる。而して、このようなパ―ティ
クルや金属不純物が存在すると、デバイスの配線の断線
やショ―ト、ライフタイムの低下といった問題が生じる
ので、これらの汚染物質を極力低減することが必要とな
る。That is, generally, a semiconductor wafer such as silicon is cut into a disk shape from an ingot, and then subjected to lapping, etching, polishing and cleaning steps to remove processing strains and contaminants, and has a smooth surface. Becomes If there is a defect in the cleaning process for removing contaminants in each of these processes, particles (fine particle contaminants) such as silicon particles and dust and metal impurities will remain on the surface of the semiconductor wafer. The presence of such particles and metal impurities causes problems such as disconnection of device wiring, shorts, and reduction in lifetime, so it is necessary to reduce these contaminants as much as possible. .
【０００４】上述したような半導体ウエハの汚染物質を
除去する洗浄液としては、例えばアンモニアと過酸化水
素との混合水溶液やコリン等の有機アルカリと過酸化水
素との混合水溶液が広く用いられている。しかしなが
ら、このようなアルカリ水溶液を洗浄液として用いた場
合、パ―ティクルについては良好に除去できるものの、
金属不純物は除去が困難であり、しかも洗浄液中のＦｅ
等の微量金属が半導体ウエハに吸着して逆汚染現象が発
生するという問題がある。As a cleaning liquid for removing the contaminants on the semiconductor wafer as described above, for example, a mixed aqueous solution of ammonia and hydrogen peroxide or a mixed aqueous solution of organic alkali such as choline and hydrogen peroxide is widely used. However, when such an alkaline aqueous solution is used as the cleaning liquid, although the particles can be removed well,
It is difficult to remove metallic impurities, and Fe in the cleaning solution
There is a problem in that a trace amount of metal such as the like is adsorbed on the semiconductor wafer to cause a reverse contamination phenomenon.
【０００５】[0005]
【発明が解決しようとする課題】以上のように、半導体
ウエハの洗浄液として従来からのアルカリ水溶液を用い
た場合、金属不純物については除去が困難であった。こ
れに対し例えば特開平3-219000号では、上記アルカリ水
溶液にクエン酸、カテコ―ル、チロン、トロポロン等か
ら選ばれた錯化剤を添加することにより、半導体ウエハ
表面あるいはアルカリ水溶液中のＦｅとこの錯化剤との
間で錯化合物を生成させて金属不純物を除去することが
試みられている。As described above, when the conventional alkaline aqueous solution is used as the cleaning liquid for the semiconductor wafer, it is difficult to remove the metal impurities. On the other hand, for example, in Japanese Unexamined Patent Publication No. 3-219000, by adding a complexing agent selected from citric acid, catechol, thyron, tropolone, etc. to the above alkaline aqueous solution, Fe on the surface of the semiconductor wafer or in the alkaline aqueous solution is added. Attempts have been made to remove the metal impurities by forming a complex compound with this complexing agent.
【０００６】しかしながらこのような洗浄液において
も、Ｆｅは錯化剤に吸着されて除去が図られるものの、
洗浄液自体やあるいは洗浄容器等に混入する確率の高い
Ｆｅ以外の金属不純物、例えばＡｌ、Ｚｎ、Ｃｕ、Ｎ
ｉ、Ｃｒ等に対しては上記錯化剤の吸着能が低いため、
これらの金属不純物を充分に除去することは未だ困難で
あるという問題があった。However, even in such a cleaning solution, Fe is adsorbed by the complexing agent and removed, but
Metal impurities other than Fe that have a high probability of being mixed in the cleaning liquid itself or the cleaning container, such as Al, Zn, Cu, N
Since the complexing agent has a low adsorption capacity for i, Cr, etc.,
There has been a problem that it is still difficult to sufficiently remove these metal impurities.
【０００７】本発明は、このような問題を解決するため
になされたものであり、Ｆｅ以外の金属不純物について
もＦｅと同様に充分に除去することが可能で、半導体ウ
エハ表面を極めて清浄な状態にすることができる半導体
ウエハ処理液を提供することを目的としている。The present invention has been made in order to solve such a problem, and metal impurities other than Fe can be sufficiently removed like Fe, and the surface of the semiconductor wafer can be kept in an extremely clean state. It is an object of the present invention to provide a semiconductor wafer processing liquid that can
【０００８】[0008]
【課題を解決するための手段及び作用】上記目的を達成
するためになされた本発明の半導体ウエハ処理液は、水
性溶媒を主成分とし、前記水性溶媒中に下記一般式で示
されるヒドラゾン誘導体及びその互変異性体の少なくと
も１種を添加成分として含有する。The semiconductor wafer processing liquid of the present invention made to achieve the above object contains an aqueous solvent as a main component, and the hydrazone derivative represented by the following general formula is contained in the aqueous solvent. It contains at least one of its tautomers as an additive component.
【０００９】[0009]
【化２】 [Chemical 2]
【００１０】（式中、Ｒ1 ，Ｒ2 はアシル基またはｏ位
の少なくとも一方がヒドロキシ基、カルボニル基及びこ
れらの塩のいずれか１種で置換された芳香族炭化水素基
もしくは芳香族複素環基、Ｒ3 は水素原子または置換さ
れていてもよい芳香族炭化水素基、複素環基、脂肪族炭
化水素基もしくは脂環式炭化水素基を表す。）(In the formula, R 1 and R 2 are an acyl group or an aromatic hydrocarbon group or an aromatic heterocyclic group in which at least one of the o-position is substituted with a hydroxy group, a carbonyl group and any one of salts thereof. The group R 3 represents a hydrogen atom or an optionally substituted aromatic hydrocarbon group, heterocyclic group, aliphatic hydrocarbon group or alicyclic hydrocarbon group.)
【００１１】すなわち本発明では、半導体ウエハの洗浄
液等の半導体ウエハ処理液において、金属不純物を吸着
して除去するための添加成分として上記一般式で示され
るヒドラゾン誘導体またはその互変異性体を用いたこと
を特徴としている。以下に、このヒドラゾン誘導体につ
いて詳細に説明する。That is, in the present invention, a hydrazone derivative represented by the above general formula or a tautomer thereof is used as an additive component for adsorbing and removing metal impurities in a semiconductor wafer processing liquid such as a semiconductor wafer cleaning liquid. It is characterized by that. The hydrazone derivative will be described in detail below.
【００１２】上記一般式中、Ｒ1 及びＲ2 はアシル基ま
たはｏ位の少なくとも一方がヒドロキシ基、カルボニル
基及びこれらの塩のいずれか１種で置換された芳香族炭
化水素基もしくは芳香族複素環基である。ここで前記ア
シル基としては、ホルミル基、アセチル基、プロピオニ
ル基、アクリロイル基、ベンゾイル基、シンナモイル
基、ピリジンカルボニル基、チアゾ―ルカルボニル基、
トリフルオロアセチル基、オキサリル基、マロニル基、
カルバモイル基、エトキシカルボニル基等が挙げられ
る。また前記芳香族炭化水素基としては、フェニル基、
ナフチル基、アントラセニル基、フェナントレニル基等
を挙げることができ、さらに前記芳香族複素環基として
は、ピロ―ル環基、インド―ル環基、カルバゾ―ル環
基、フラン環基、クマロン環基、チオフェン環基、ベン
ゾチオフェン環基、ピラゾ―ル環基、インダゾ―ル環
基、イミダゾ―ル環基、ベンゾイミダゾ―ル環基、ナフ
トイミダゾ―ル環基、オキサゾ―ル環基、ベンゾオキサ
ゾ―ル環基、ナフトキオキサゾ―ル環基、チアゾ―ル環
基、ベンゾチアゾ―ル環基、ナフトチアゾ―ル環基、ピ
リジン環基、キノリン環基、イソキノリン環基、アクリ
ジン環基、フェナントリジン環基、フェナントロリン環
基、ピリダジン環基、ピリミジン環基、ピラジン環基、
フタラジン環基、キノキサリン環基、キナゾリン環基、
シンノリン環基、ベンゾジオキソ―ル環基、ベンゾジオ
キサン環基等が例示される。In the above general formula, R 1 and R 2 are an acyl group or an aromatic hydrocarbon group or an aromatic heterocyclic group in which at least one of the o-positions is substituted with a hydroxy group, a carbonyl group and any one of salts thereof. It is a cyclic group. Here, as the acyl group, formyl group, acetyl group, propionyl group, acryloyl group, benzoyl group, cinnamoyl group, pyridinecarbonyl group, thiazole carbonyl group,
Trifluoroacetyl group, oxalyl group, malonyl group,
Examples thereof include a carbamoyl group and an ethoxycarbonyl group. As the aromatic hydrocarbon group, a phenyl group,
Examples thereof include a naphthyl group, anthracenyl group, and phenanthrenyl group. Further, examples of the aromatic heterocyclic group include a pyrrole ring group, an indol ring group, a carbazole ring group, a furan ring group, and a coumarone ring group. , Thiophene ring group, benzothiophene ring group, pyrazol ring group, indazole ring group, imidazole ring group, benzimidazole ring group, naphthoimidazole ring group, oxazole ring group, benzoxazole Ring group, naphthoquinoxazole ring group, thiazole ring group, benzothiazole ring group, naphthothiazole ring group, pyridine ring group, quinoline ring group, isoquinoline ring group, acridine ring group, phenanthridine ring group, phenanthroline Ring group, pyridazine ring group, pyrimidine ring group, pyrazine ring group,
Phthalazine ring group, quinoxaline ring group, quinazoline ring group,
Examples thereof include a cinnoline ring group, a benzodioxole ring group, and a benzodioxane ring group.
【００１３】なお本発明において、Ｒ1 またはＲ2 がｏ
位の少なくとも一方がヒドロキシ基、カルボニル基及び
これらの塩のいずれか１種で置換された芳香族炭化水素
基もしくは芳香族複素環基である場合、この芳香族炭化
水素基、芳香族複素環基はさらに置換基で置換されてい
てもよい。このような置換基としては、具体的には、ジ
置換アミノ基、モノ置換アミノ基、複素環状アミノ基、
アシルアミノ基、アミノ基、ニトロ基、オキシ基、ヒド
ロキシ基、チオ基、ハロゲン基、カルボキシル基及びそ
の塩、オキシカルボニル基、アミノカルボニル基、アシ
ル基、スルホン酸基及びその塩、スルホニル基、ハロゲ
ン化アルキル基、炭化水素基、複素環基等が挙げられ
る。このうち、ヒドロキシ基、カルボキシル基、スルホ
ン酸基及びこけらの塩で前記芳香族炭化水素基、芳香族
複素環基を置換すると、添加成分であるヒドラゾン誘導
体またはその互変異性体の水性溶媒に対する溶解性が高
められる。In the present invention, R 1 or R 2 is o
When at least one of the positions is a hydroxy group, a carbonyl group or an aromatic hydrocarbon group or aromatic heterocyclic group substituted with any one of these salts, the aromatic hydrocarbon group or aromatic heterocyclic group May be further substituted with a substituent. As such a substituent, specifically, a di-substituted amino group, a mono-substituted amino group, a heterocyclic amino group,
Acylamino group, amino group, nitro group, oxy group, hydroxy group, thio group, halogen group, carboxyl group and its salt, oxycarbonyl group, aminocarbonyl group, acyl group, sulfonic acid group and its salt, sulfonyl group, halogenated Examples thereof include an alkyl group, a hydrocarbon group and a heterocyclic group. Of these, when the aromatic hydrocarbon group or aromatic heterocyclic group is substituted with a hydroxy group, a carboxyl group, a sulfonic acid group, or a salt of moss, the hydrazone derivative or its tautomer as an additive component is used in an aqueous solvent. The solubility is increased.
【００１４】また上記一般式中、Ｒ3 は水素原子または
置換されていてもよい芳香族炭化水素基、複素環基、脂
肪族炭化水素基もしくは脂環式炭化水素基であり、好ま
しくは水性溶媒に対する溶解性の観点から水素原子であ
る。ここで前記芳香族炭化水素基としては、フェニル
基、ナフチル基、アントラセニル基、フェナントレニル
基等が挙げられ、前記複素環基としては、ピロ―ル環
基、ピロリジン環基、インド―ル環基、カルバゾ―ル環
基、フラン環基、クマロン環基、チオフェン環基、ベン
ゾチオフェン環基、ピラゾ―ル環基、インダゾ―ル環
基、イミダゾ―ル環基、ベンゾイミダゾ―ル環基、ナフ
トイミダゾ―ル環基、オキサゾ―ル環基、ベンゾオキサ
ゾ―ル環基、ナフトキオキサゾ―ル環基、チアゾ―ル環
基、ベンゾチアゾ―ル環基、ナフトチアゾ―ル環基、ピ
リジン環基、ピペリジン環基、キノリン環基、イソキノ
リン環基、アクリジン環基、フェナントリジン環基、フ
ェナントロリン環基、ピリダジン環基、ピリミジン環
基、ピラジン環基、ピペラジン環基、フタラジン環基、
キノキサリン環基、キナゾリン環基、シンノリン環基、
ベンゾジオキソ―ル環基、ジオキサン環基、ベンゾジオ
キサン環基、ピラン環基等を挙げることができる。また
前記脂肪族炭化水素基としては、メチル基、エチル基、
プロピル基、ｉ−プロピル基、ブチル基、ｉ−ブチル
基、ｓ−ブチル基、ｔ−ブチル基、ペンチル基、ｔ−ペ
ンチル基、ｉ−ペンチル基、ネオペンチル基、ヘキシル
基、ｉ−ヘキシル基、ヘプチル基、オクチル基、ノニル
基、デシル基、ビニル基、アリル基、ｉ−プロペニル
基、プロペニル基、メタリル基、クロチル基、ブテニル
基、ペンテニル基、ブタジエニル基、エチニル基、プロ
ピニル基、ブチニル基、ペンチニル基等が挙げられる。
さらに前記脂環式炭化水素基としては、シクロプロピル
基、シクロブチル基、シクロペンチル基、シクロヘキシ
ル基、シクロヘプチル基、シクロオクチル基、シクロペ
ンテニル基、シクロヘキセニル基、シクロヘプテニル
基、シクロオクテニル基、シクロペンタジエニル基、シ
クロヘキサジエニル基等が例示される。なおこれらの芳
香族炭化水素基、複素環基、脂肪族炭化水素基、脂環式
炭化水素基は、いずれも前述したような置換基で置換さ
れていてもよく、特に置換基をヒドロキシ基、カルボキ
シル基、スルホン酸基及びこれらの塩とした場合は、上
記ヒドラゾン誘導体またはその互変異性体の水性溶媒に
対する溶解性が向上する。In the above general formula, R 3 is a hydrogen atom or an optionally substituted aromatic hydrocarbon group, heterocyclic group, aliphatic hydrocarbon group or alicyclic hydrocarbon group, preferably an aqueous solvent. It is a hydrogen atom from the viewpoint of solubility in. Examples of the aromatic hydrocarbon group include a phenyl group, a naphthyl group, an anthracenyl group, and a phenanthrenyl group.As the heterocyclic group, a pyrrole ring group, a pyrrolidine ring group, an indole ring group, Carbazole ring group, furan ring group, coumarone ring group, thiophene ring group, benzothiophene ring group, pyrazole ring group, indazole ring group, imidazole ring group, benzimidazole ring group, naphthoimidazole group Ring group, oxazole ring group, benzoxazole ring group, naphthoxoxazole ring group, thiazole ring group, benzothiazole ring group, naphthothiazole ring group, pyridine ring group, piperidine ring group, quinoline ring Group, isoquinoline ring group, acridine ring group, phenanthridine ring group, phenanthroline ring group, pyridazine ring group, pyrimidine ring group, pyrazine ring group, piperazine Group, phthalazine ring group,
Quinoxaline ring group, quinazoline ring group, cinnoline ring group,
Examples thereof include a benzodioxole ring group, a dioxane ring group, a benzodioxane ring group, and a pyran ring group. Further, as the aliphatic hydrocarbon group, a methyl group, an ethyl group,
Propyl group, i-propyl group, butyl group, i-butyl group, s-butyl group, t-butyl group, pentyl group, t-pentyl group, i-pentyl group, neopentyl group, hexyl group, i-hexyl group, Heptyl group, octyl group, nonyl group, decyl group, vinyl group, allyl group, i-propenyl group, propenyl group, methallyl group, crotyl group, butenyl group, pentenyl group, butadienyl group, ethynyl group, propynyl group, butynyl group, Examples include a pentynyl group.
Further, as the alicyclic hydrocarbon group, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclopentenyl group, a cyclohexenyl group, a cycloheptenyl group, a cyclooctenyl group, a cyclopentadienyl group. Group, cyclohexadienyl group and the like. Incidentally, these aromatic hydrocarbon groups, heterocyclic groups, aliphatic hydrocarbon groups, alicyclic hydrocarbon groups may all be substituted with a substituent as described above, especially a substituent is a hydroxy group, When a carboxyl group, a sulfonic acid group and salts thereof are used, the solubility of the hydrazone derivative or its tautomer in an aqueous solvent is improved.
【００１５】本発明の半導体ウエハ処理液においては、
上述したようなヒドラゾン誘導体またはその互変異性体
が添加成分として１種または２種以上、主成分である水
性溶媒中に含有される。このとき本発明では、それぞれ
異なる金属に対し特に高い吸着能を有するヒドラゾン誘
導体またはその互変異性体を併用して、半導体ウエハ表
面での金属不純物の残留量を一段と低減させることも可
能である。また、このような添加成分の含有量としては
１ppm 以上程度から添加効果が現れはじめ、一般に添加
成分の含有量が多くなるほど添加効果は増大するため上
限については特に限定されないが、含有量を200ppmを越
えて多くしても添加成分の添加効果はもはやさほど向上
せず、かえって添加成分中の不純物に起因する半導体ウ
エハ処理液の純度低下や半導体ウエハ処理時の半導体ウ
エハ表面での異常発生のおそれがあるので、好ましい添
加成分の含有量は１〜200ppmである。In the semiconductor wafer processing liquid of the present invention,
One or more hydrazone derivatives or tautomers thereof as described above are contained as an additional component in the main component of the aqueous solvent. At this time, in the present invention, it is possible to further reduce the residual amount of metal impurities on the surface of the semiconductor wafer by using a hydrazone derivative or a tautomer thereof having a particularly high adsorbing ability for different metals. In addition, the effect of addition begins to appear from about 1 ppm or more as the content of such an additive component, and generally, as the content of the additive component increases, the effect of addition increases. Therefore, the upper limit is not particularly limited, but the content is 200 ppm. Even if the amount exceeds the above, the effect of adding the additive component is not improved so much, and on the contrary, the purity of the semiconductor wafer processing liquid may decrease due to the impurities in the additive component and an abnormality may occur on the surface of the semiconductor wafer during semiconductor wafer processing. Therefore, the content of the preferable additive component is 1 to 200 ppm.
【００１６】本発明において、半導体ウエハ処理液の主
成分となる水性溶媒としては、水またはＮＨ4 ＯＨ，Ｎ
ａＯＨ，ＫＯＨ，コリン等の水溶液やこれらの混合溶液
等のアルカリ性水溶液が好ましく用いられ得る。さら
に、このような水性溶媒中にはＨ2 Ｏ2 等の酸化剤が適
宜配合されていてもよく、前記酸化剤の配合により、半
導体ウエハ処理時における半導体ウエハのエッチングや
半導体ウエハ表面での荒れの発生を抑えることができ
る。In the present invention, the aqueous solvent which is the main component of the semiconductor wafer processing liquid is water or NH 4 OH, N.
An aqueous solution of aOH, KOH, choline or the like, or an alkaline aqueous solution such as a mixed solution thereof can be preferably used. Further, an oxidizing agent such as H 2 O 2 may be appropriately mixed in such an aqueous solvent, and the mixing of the oxidizing agent causes etching of the semiconductor wafer during processing of the semiconductor wafer and roughening of the surface of the semiconductor wafer. Can be suppressed.
【００１７】上述したような本発明の半導体ウエハ処理
液では、半導体ウエハ表面へのパ―ティクル（微粒子汚
染物質）の残留が抑えられるとともに、添加成分のヒド
ラゾン誘導体またはその互変異性体がＮ及びＯの２種類
の配位原子を有する多座配位のキレ―ト配位子であるた
め、各種金属イオンとの間で極めて安価な錯化合物を生
成し、金属不純物が充分に吸着される。従って、本発明
の半導体ウエハ処理液においては上述したような添加成
分の少量の含有により、半導体ウエハ表面へのパ―ティ
クルや金属不純物等の汚染物質の残留を著しく低減する
ことが可能となる。In the semiconductor wafer processing liquid of the present invention as described above, it is possible to prevent the particles (fine particle contaminants) from remaining on the surface of the semiconductor wafer, and the hydrazone derivative or the tautomer thereof as an additive component is N or Since it is a polydentate chelate ligand having two kinds of O coordinate atoms, it forms an extremely inexpensive complex compound with various metal ions and sufficiently adsorbs metal impurities. Therefore, in the semiconductor wafer processing liquid of the present invention, by containing a small amount of the above-mentioned additive components, it becomes possible to remarkably reduce the residue of contaminants such as particles and metal impurities on the surface of the semiconductor wafer.
【００１８】[0018]
【実施例】以下、本発明を実施例によりさらに詳細に説
明する。EXAMPLES The present invention will now be described in more detail with reference to examples.
【００１９】まず、ＮＨ4 ＯＨの30wt％水溶液、Ｈ2 Ｏ
2 の35wt％水溶液及び水を容積比で１：１：５に混合し
て、得られた混合溶液を主成分の水性溶媒とし、この水
性溶媒に添加成分として表１に示したヒドラゾン誘導体
Ａ〜Ｅをそれぞれ表２に示した所定量添加せしめ、本発
明の半導体ウエハ処理液を調製した。なお比較のため、
添加成分としてカテコ―ルまたはチロンがそれぞれ表２
に示した所定量添加されてなる半導体ウエハ処理液を併
せて調製した。First, a 30 wt% aqueous solution of NH 4 OH and H 2 O
The 35 wt% aqueous solution of 2 and water were mixed in a volume ratio of 1: 1: 5, and the resulting mixed solution was used as an aqueous solvent as a main component, and the hydrazone derivative A shown in Table 1 was added as an additional component to this aqueous solvent. E was added in the predetermined amount shown in Table 2 to prepare a semiconductor wafer processing liquid of the present invention. For comparison,
Catechol or Tyrone as an additive component are shown in Table 2 respectively.
The semiconductor wafer processing liquid prepared by adding a predetermined amount shown in 1 above was also prepared.
【００２０】次いで、これらの半導体ウエハ処理液及び
添加成分を全く含有しない上記水性溶媒をそれぞれ用い
て、予め金属不純物を強制的に付着させた鏡面仕上げで
直径150mm の半導体ウエハ（ＣＺ，Ｎタイプ）を70℃の
液温で10分間洗浄し、さらに10分間水洗した。続いて、
洗浄、水洗の行なわれた半導体ウエハの鏡面仕上げ面に
フッ化水素酸水溶液の液滴を走査させることにより、半
導体ウエハ表面に残留している微量金属を前記液滴に溶
解せしめ、この液滴に溶解した金属不純物濃度をフレ―
ムレス原子吸光法で分析して、半導体ウエハ表面におけ
る各金属不純物の残留量を評価した。結果を表２に併せ
て示す。なお表２中の金属不純物濃度は、各半導体ウエ
ハ処理液及び水性溶媒について５枚ずつ半導体ウエハの
洗浄を行ない、これら５枚の半導体ウエハの表面をそれ
ぞれ走査させた液滴から分析された金属不純物濃度の平
均値である。Then, a semiconductor wafer having a diameter of 150 mm (CZ, N type) having a mirror-finished surface to which metal impurities have been forcibly adhered in advance by using these semiconductor wafer processing liquid and the above-mentioned aqueous solvent containing no additional components, respectively. Was washed with a liquid temperature of 70 ° C. for 10 minutes, and further washed with water for 10 minutes. continue,
By scanning droplets of a hydrofluoric acid aqueous solution on the mirror-finished surface of the semiconductor wafer that has been washed and washed with water, trace metals remaining on the surface of the semiconductor wafer are dissolved in the droplets, and the droplets are dissolved. Freezing the concentration of dissolved metal impurities
The residual amount of each metal impurity on the surface of the semiconductor wafer was evaluated by analysis by the Mures atomic absorption method. The results are also shown in Table 2. The metal impurity concentrations in Table 2 are the metal impurities analyzed from the droplets obtained by cleaning the semiconductor wafer processing liquid and the aqueous solvent by washing five semiconductor wafers each and scanning the surface of each of the five semiconductor wafers. It is the average value of the concentration.
【００２１】表２から明らかなように、本発明の半導体
ウエハ処理液では、添加成分としてヒドラゾン誘導体を
含有せしめたことにより、半導体ウエハ表面への金属不
純物の残留が抑えられ、添加成分としてカテコ―ルまた
はチロンを含有する場合と比較しても、添加成分の少量
の含有によりあらゆる金属不純物を充分に除去できるこ
とが判る。また表２に示されるように、添加成分として
２種のヒドラゾン誘導体を併用したときは金属不純物の
残留量が極めて少なく、半導体ウエハ表面への金属不純
物の残留を特に微量に抑えることができた。As is clear from Table 2, in the semiconductor wafer processing liquid of the present invention, the inclusion of the hydrazone derivative as an additive component suppresses the retention of metal impurities on the surface of the semiconductor wafer, and the addition of catechol as an additive component. It can be seen that the inclusion of a small amount of the additive component enables sufficient removal of all metal impurities, even when compared with the case of containing ru or tyrone. Further, as shown in Table 2, when two kinds of hydrazone derivatives were used together as additive components, the residual amount of metallic impurities was extremely small, and the residual amount of metallic impurities on the semiconductor wafer surface could be suppressed to a particularly small amount.
【００２２】[0022]
【表１】 [Table 1]
【００２３】[0023]
【表２】 [Table 2]
【００２４】[0024]
【発明の効果】以上詳述したように本発明の半導体ウエ
ハ処理液によれば、半導体ウエハ表面からパ―ティクル
及び金属不純物を充分に除去することが可能であり、半
導体ウエハ表面を極めて清浄な状態にすることができ
る。As described above in detail, according to the semiconductor wafer processing liquid of the present invention, it is possible to sufficiently remove particles and metal impurities from the surface of the semiconductor wafer, and the surface of the semiconductor wafer is extremely clean. Can be in a state.
Claims (1)
に下記一般式で示されるヒドラゾン誘導体及びその互変
異性体の少なくとも１種を添加成分として含有すること
を特徴とする半導体ウエハ処理液。 【化１】 （式中、Ｒ1 ，Ｒ2 はアシル基またはｏ位の少なくとも
一方がヒドロキシ基、カルボニル基及びこれらの塩のい
ずれか１種で置換された芳香族炭化水素基もしくは芳香
族複素環基、Ｒ3 は水素原子または置換されていてもよ
い芳香族炭化水素基、複素環基、脂肪族炭化水素基もし
くは脂環式炭化水素基を表す。）1. A semiconductor wafer processing liquid containing an aqueous solvent as a main component, and containing at least one of a hydrazone derivative represented by the following general formula and a tautomer thereof as an additive component in the aqueous solvent. . [Chemical 1] (In the formula, R 1 and R 2 are an acyl group or an aromatic hydrocarbon group or an aromatic heterocyclic group in which at least one of o-position is substituted with a hydroxy group, a carbonyl group and any one of salts thereof, R 3 represents a hydrogen atom or an optionally substituted aromatic hydrocarbon group, heterocyclic group, aliphatic hydrocarbon group or alicyclic hydrocarbon group.)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31071192A JP3244813B2 (en) | 1992-11-20 | 1992-11-20 | Semiconductor wafer processing solution and processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31071192A JP3244813B2 (en) | 1992-11-20 | 1992-11-20 | Semiconductor wafer processing solution and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06163495A true JPH06163495A (en) | 1994-06-10 |
| JP3244813B2 JP3244813B2 (en) | 2002-01-07 |
Family
ID=18008554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31071192A Expired - Fee Related JP3244813B2 (en) | 1992-11-20 | 1992-11-20 | Semiconductor wafer processing solution and processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3244813B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997005228A1 (en) * | 1995-07-27 | 1997-02-13 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition therefor |
| EP0924970A3 (en) * | 1997-12-22 | 2000-03-08 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using the same |
| US7135445B2 (en) | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| JP2011516253A (en) * | 2008-04-09 | 2011-05-26 | ビーエーエスエフ ソシエタス・ヨーロピア | Use of metal hydrazide complex compounds as oxidation catalysts |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153883A (en) * | 1976-06-17 | 1977-12-21 | Kao Corp | Bleaching compositions |
| JPS6363643A (en) * | 1986-09-04 | 1988-03-22 | 多摩化学工業株式会社 | Stable quaternary alkylhydroxyalkylammonium hydroxide aqueous solution |
-
1992
- 1992-11-20 JP JP31071192A patent/JP3244813B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153883A (en) * | 1976-06-17 | 1977-12-21 | Kao Corp | Bleaching compositions |
| JPS6363643A (en) * | 1986-09-04 | 1988-03-22 | 多摩化学工業株式会社 | Stable quaternary alkylhydroxyalkylammonium hydroxide aqueous solution |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997005228A1 (en) * | 1995-07-27 | 1997-02-13 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition therefor |
| US6228823B1 (en) | 1995-07-27 | 2001-05-08 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition used for the same |
| US6498132B2 (en) | 1995-07-27 | 2002-12-24 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition used for the same |
| KR100429440B1 (en) * | 1995-07-27 | 2004-07-15 | 미쓰비시 가가꾸 가부시키가이샤 | Method of surface treatment of gas and surface treatment composition used therefor |
| EP0789071A4 (en) * | 1995-07-27 | 2004-07-28 | Mitsubishi Chem Corp | METHOD FOR TREATING A SUBSTRATE SURFACE AND TREATMENT THEREFOR |
| EP0924970A3 (en) * | 1997-12-22 | 2000-03-08 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using the same |
| EP1122301A1 (en) * | 1997-12-22 | 2001-08-08 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using the same |
| US6372699B1 (en) | 1997-12-22 | 2002-04-16 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using same |
| US6450181B1 (en) * | 1997-12-22 | 2002-09-17 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using same |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US7135445B2 (en) | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| JP2011516253A (en) * | 2008-04-09 | 2011-05-26 | ビーエーエスエフ ソシエタス・ヨーロピア | Use of metal hydrazide complex compounds as oxidation catalysts |
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| Publication number | Publication date |
|---|---|
| JP3244813B2 (en) | 2002-01-07 |
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