JPH06158291A - Thin film manufacturing method and manufacturing apparatus - Google Patents

Abstract

(57) [Summary] [Object] The present invention relates to a method and an apparatus for manufacturing a thin film, and particularly, an object thereof is to stably form a film for a long time. In a method of manufacturing a thin film in which a thin film is formed directly on a substrate in a vacuum or continuously via an underlayer, an ion beam wider than the width of the substrate is irradiated, and the vicinity of the end portion of the substrate width. Characterized in that the ionic strength at is stronger than the average value of the ionic strength within the substrate width, and
In a continuous film forming type thin film manufacturing apparatus equipped with an exhaust system, a film forming source system, and a roller system for conveying a long substrate, ions are generated on the front side of the film forming on the can roller supporting the substrate during vapor deposition. A plurality of ion sources for irradiation are arranged so that the ion intensity near the terminal end portion of the substrate width is higher than the average value of the ion intensity within the substrate width.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing method and manufacturing apparatus.

[0002]

2. Description of the Related Art The field of application of thin films in recent society is
There are a wide variety of wrapping paper, circuit parts, magnetic tapes, etc. As a method for producing such a large amount of thin film, a continuous winding method in which a thin film is continuously formed on a long substrate is widely used. For example, when using the vapor deposition method,
As shown in FIG. 7, a long polymer substrate can be mass-produced as a packaging material or a magnetic tape by depositing a thin film while traveling along the peripheral surface of a cylindrical can. A thin film can be continuously formed by the same method in other film forming methods such as the sputtering method and the ion plating method.

[0003]

One problem in forming a thin film by the continuous winding method is contamination of a can along which a long substrate runs. Normally, the shielding plate provided at the end of the substrate width between the can and the film forming source prevents the thin film from adhering to the end of the substrate width and the surface of the can.
When the film is formed for a long time, a small amount of the wraparound component gradually accumulates just outside the end portion of the substrate width to form a film. That is, as the film forming time elapses, a step is formed between the substrate running portion on the can and the outside thereof. When this step is generated, it affects the running of the long substrate and causes wrinkles, or the adhesion between the substrate and the can is deteriorated, causing thermal damage to the substrate. Therefore, a method of preventing such a step has been desired.

[0004]

In order to solve this problem, the present invention provides a thin film manufacturing method for forming a thin film directly on a substrate in vacuum or continuously through an underlayer, wherein the width of the substrate is A method of irradiating a wider ion beam and making the ion intensity near the terminal end of the substrate width stronger than the average value of the ion intensity within the substrate width, and the exhaust system, the film forming source system, and the long substrate. In a continuous film-forming type thin film manufacturing apparatus equipped with a roller system for transporting, a plurality of ion sources for irradiating ions on the front side of film formation on a can roller supporting a substrate during vapor deposition are terminated with a substrate width termination. It is arranged so that the ionic strength near the portion is stronger than the average value of the ionic strength within the substrate width.

[0005]

By irradiating the end portion of the substrate width with an ion stream of appropriate energy, it is possible to prevent the growth of the wraparound film deposited on the can outside the end portion of the substrate width.

[0006]

EXAMPLE An example of the present invention in the continuous vapor deposition method will be described below with reference to FIG. The long polymer substrate 4 unwound along the rotational direction 2 from the unwinding roll 1 in the vacuum chamber evacuated by the evacuation system can 5
From the ion gun 6 to the ion beam 7 while traveling along the circumference of
After being irradiated with the electron beam, the electron beam evaporation source 9 which is being irradiated with the electron beam 8 receives the thin film vapor-deposited at the opening of the shielding plate 10 and is wound around the winding roll 11. Further, when the thin film is formed into multiple layers, this step is repeated.

Polymer substrate having a thickness of 2 μm and a width of 1000
An aluminum film having a thickness of 100 nm was formed using a polyethylene terephthalate substrate having a thickness of mm. The vapor deposition width was 970 mm. After vapor deposition with a substrate length of 10000 m, the step difference on the can near the terminal end of the substrate width was measured. As the ion source, two Kaufman type ion guns having an ion flow diameter of 3 cm were used, and they were installed so that the extension of the central axis of the ion gun coincided with both ends of the substrate width. The distance from the ion source to the can surface was set to 20 cm, and the ion source was oriented so that the ion flow was incident on the can surface almost vertically. The step difference on the can when the ion beam voltage is 1000 V and the acceleration voltage is 500 V and the ion current is changed is shown in FIG. As can be seen from FIG. 3, as the ionic current increases, the step formed on the can surface becomes smaller. On the other hand, when the ion gun was moved to irradiate the width center of the substrate with an ion current, the substrate was thermally damaged in the vapor deposition section at an ion current of 10 mA or more. Therefore, it is necessary to make the ion intensity irradiated to the vapor deposition portion inside the substrate width smaller than the ion irradiated to the end portion of the substrate width.

FIG. 4 shows a step generated on the can after vapor deposition when the ion beam voltage is changed while maintaining the relationship of ion beam voltage = 2 × accelerating voltage with the ion current kept constant at 80 mA. FIG. When the ion beam voltage is 400 V or higher, the step difference on the can surface is significantly reduced.

FIG. 5 is a diagram showing an example in which an ion gun is additionally installed in order to positively irradiate the deposited film forming portion inside the substrate width with ions. Ions to be irradiated to the vapor deposition film forming portion as pretreatment were made to be able to be irradiated from a 12 cm Kauffman type ion gun in a wider range than the diameter of the ion gun by using a defocus grid. Ions with which the substrate width end portion is irradiated using the configuration of (FIG. 5) has a beam voltage of 10
The ion for irradiating the vapor deposition film forming part is accelerated with a constant voltage of 00 V, an acceleration voltage of 500 V and an ion current of 80 mA.
Only the ion current was changed while keeping the voltage constant at 0 V and the acceleration voltage of 200 V. At this time, the adhesion strength of the aluminum film formed to a thickness of 100 nm on the polyethylene terephthalate substrate having a thickness of 2 μm is normalized by the adhesion strength when the ionic current is 0, and the result is shown in FIG. As can be seen from (FIG. 6), the adhesive force increases as the ionic current with which the vapor deposition film forming portion is irradiated increases. However, when the ionic current is 40 mA or more, no improvement in adhesive strength is observed. Further, the substrate was thermally damaged when the ion current was 50 mA or more. Therefore, it is necessary to select an appropriate value for the intensity of the ions with which the vapor deposition film forming portion is irradiated.

FIG. 1 shows an example of a schematic diagram of the ion beam intensity distribution in the present invention. Although only the case where the continuous vapor deposition method is used as the thin film forming method is described as an example, the present invention is also effective in other continuous thin film manufacturing methods such as a continuous sputtering method or a continuous ion plating method. There is no change. Further, the conditions such as the ion beam voltage, the acceleration voltage and the ion current need to be optimized depending on the film forming conditions including the material for forming the thin film. Further, when a so-called neutralizer is used in combination, in which a filament or the like is used during ion irradiation to neutralize the ions with thermoelectrons, it may be effective in preventing abnormal discharge in the vacuum chamber.

[0011]

As described above, according to the thin film manufacturing method and manufacturing apparatus of the present invention, a thin film can be stably formed over a long length.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a schematic diagram of an ion beam intensity distribution in the present invention.

FIG. 2 is a schematic view showing an example of a thin film manufacturing apparatus of the present invention.

FIG. 3 is a diagram showing a relationship between an ion current and a step on a can.

FIG. 4 is a diagram showing a relationship between an ion beam voltage and a step on a can.

FIG. 5 is a schematic diagram showing an example of a thin film manufacturing apparatus of the present invention.

FIG. 6 is a diagram showing an example of a relation between an ion current applied to a vapor deposition film formation portion and adhesion strength.

FIG. 7 is a schematic diagram showing an example of a conventional thin film manufacturing apparatus.

[Explanation of symbols]

 1 Unwinding Roll 2 Rotation Direction 3 Guide Roll 4 Polymer Substrate 5 Can 6 Ion Gun 7 Ion Beam 8 Electron Beam 9 Electron Beam Evaporation Source 10 Shielding Plate 11 Winding Roll

Claims (2)

[Claims] 1. A method of manufacturing a thin film, which comprises forming a thin film directly on a substrate in a vacuum or continuously through an underlayer, irradiating an ion beam wider than the width of the substrate, and terminating the substrate width. A method for producing a thin film, characterized in that the ionic strength in the vicinity of the portion is made stronger than the average value of the ionic strength in the width of the substrate. 2. A continuous film-forming type thin film manufacturing apparatus equipped with an exhaust system, a film forming source system, and a roller system for conveying a long substrate, and a film on a can roller for supporting the substrate during vapor deposition. A thin film manufacturing apparatus in which a plurality of ion sources that irradiate ions on the front side of the film are arranged so that the ion intensity near the terminal end of the substrate width is higher than the average value of the ion intensity within the substrate width.