JPH06150828A - Barrier structure for plasma display panel - Google Patents
Barrier structure for plasma display panelInfo
- Publication number
- JPH06150828A JPH06150828A JP31609992A JP31609992A JPH06150828A JP H06150828 A JPH06150828 A JP H06150828A JP 31609992 A JP31609992 A JP 31609992A JP 31609992 A JP31609992 A JP 31609992A JP H06150828 A JPH06150828 A JP H06150828A
- Authority
- JP
- Japan
- Prior art keywords
- barrier
- layer
- lower layer
- display panel
- plasma display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 86
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 15
- 238000010304 firing Methods 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 abstract description 88
- 239000002355 dual-layer Substances 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000009191 jumping Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Gas-Filled Discharge Tubes (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、プラズマディスプレイ
パネルの障壁構造に係り、より詳細には、障壁の端部の
跳ね上がりを防止できるようにしたプラズマディスプレ
イパネルの障壁構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a barrier structure for a plasma display panel, and more particularly to a barrier structure for a plasma display panel capable of preventing the edge of the barrier from jumping up.
【０００２】[0002]
【従来の技術】プラズマディスプレイパネルは、アノー
ド電極３が形成される前面板１と、カソード電極４が形
成される背面板２の二枚の絶縁板１，２の内側に障壁５
が形成された構成よりなる（図１参照）。すなわち、直
交するカソード電極群とアノード電極群と、該電極間に
光のクロストークを防ぎ、画面のコントラストを作るた
めの黒色の障壁５を設け、該電極内部に希ガスを封入
し、絶縁板１，２に形成された両電極３，４の交差部が
１つの画素に対応する構成とされている。2. Description of the Related Art A plasma display panel includes a barrier plate 5 inside two insulating plates 1 and 2, a front plate 1 having an anode electrode 3 formed thereon and a rear plate 2 having a cathode electrode 4 formed thereon.
Is formed (see FIG. 1). That is, a cathode electrode group and an anode electrode group which are orthogonal to each other, a black barrier 5 for preventing light crosstalk and for making a screen contrast are provided between the electrodes, and a rare gas is sealed inside the electrodes to form an insulating plate. The intersection of the electrodes 3 and 4 formed on the electrodes 1 and 2 corresponds to one pixel.
【０００３】そして、このプラズマディスプレイパネル
は、放電空間中で放電時に気体ガス原子を電子により励
起させ、この励起された原子が基底状態に戻ることによ
り光を発生させている。ところで、この励起状態にある
原子の寿命は、約１０-8ｓｅｃ程度であるが、特定のも
のは、１〜１０ｍｓｅｃ程度の寿命をもつものもある。
そして、後者は、放電中にゆっくり拡散し、障壁等の構
造物に衝突して、そこで再結合し消滅する。長寿命の励
起された原子は、電子の衝突により容易に電離され、イ
オン電子を生成するため、空間中にこれが多数存在する
ほど電離が起こり易くなり、放電を安定させ、また放電
電圧を低下するのに効果がある。このため、放電空間は
広いほど有利となるため、画素面積を小さくし、かつ放
電空間を広くする工夫が期待されている。In this plasma display panel, gas gas atoms are excited by electrons during discharge in the discharge space, and the excited atoms return to the ground state to generate light. By the way, the lifetime of atoms in this excited state is about 10 −8 sec, but there are some specific ones having a lifetime of about 1 to 10 msec.
The latter slowly diffuses during discharge, collides with a structure such as a barrier, and recombines and disappears there. Excited atoms with a long life are easily ionized by the collision of electrons to generate ion electrons, so the more ions are present in the space, the more easily ionization occurs, which stabilizes the discharge and lowers the discharge voltage. Is effective. Therefore, the wider the discharge space is, the more advantageous it is. Therefore, a device for reducing the pixel area and widening the discharge space is expected.
【０００４】ところで、このプラズマディスプレイパネ
ルにおいて、その放電空間を形成する障壁は、近年、フ
ォトリソグラフィ法を用いて形成されている。このフォ
トリソグラフィ法は、光に感じる物質を絶縁板上に塗布
して、該光のエネルギーを遮蔽するパターンを前もって
準備し、該遮蔽マスクを通過したエネルギーを試料上に
照射してパターンを形成する方法である。そして、この
方法によれば、１００μｍ以下のライン幅およびライン
間隔をもち、かつ１００μｍ以上の障壁高さを有するプ
ラズマディスプレイパネルを得ることができる。By the way, in this plasma display panel, in recent years, the barrier forming the discharge space has been formed by using a photolithography method. In this photolithography method, a substance sensitive to light is applied on an insulating plate to prepare in advance a pattern for shielding the energy of the light, and the energy passing through the shielding mask is irradiated on the sample to form the pattern. Is the way. Then, according to this method, it is possible to obtain a plasma display panel having a line width and a line interval of 100 μm or less and a barrier height of 100 μm or more.
【０００５】そして、このフォトリソグラフィ法による
プラズマディスプレイパネルの障壁形成法は、具体的に
は、 セラミック粉末に紫外線硬化樹脂を混合した障壁形
成のためのスリップをアノード電極の形成された絶縁板
上にコーティングする工程、 該コーティング層の障壁形成に必要な部分のみを露
光マスクで露光し硬化させる工程、 の工程を一回ないし数回に繰り返し、必要高さ
の形成層を得る工程、 以上の形成層を現像してパターニングし非露光部を
溶出する工程、 紫外線硬化された部分を焼成する工程、 の五工程を経て障壁を形成する構成よりなる。In the method of forming a barrier of a plasma display panel by the photolithography method, specifically, slip for forming a barrier in which ceramic powder is mixed with an ultraviolet curable resin is slipped on an insulating plate on which an anode electrode is formed. The step of coating, the step of exposing and curing only a portion of the coating layer necessary for forming a barrier with an exposure mask to obtain a formation layer having a required height by repeating the step once or several times. Is developed and patterned to elute the non-exposed portion, and the step of baking the ultraviolet-cured portion is performed, and the barrier is formed through the following five steps.
【０００６】[0006]
【発明が解決しようとする課題】しかし、このフォトリ
ソグラフィ法による障壁形成法の場合、次のような課題
がある。すなわち、 障壁パターンは、ライン幅が細いため基板ガラスと
の密着力（密着面積）が弱く、該障壁の焼成の際に、該
障壁ラインの長さ方向の収縮に耐えられず、パターン端
部が跳ね上がるという現象が発生する場合がある。 該パターンは、パネル封着時に欠落し、該欠落した
パターンがパネル上に残り、画素をつぶしてしまい、歩
留りが低下する。 等の課題がある。However, the barrier formation method by the photolithography method has the following problems. That is, since the barrier pattern has a small line width, the adhesive force (adhesion area) with the substrate glass is weak, and when the barrier is fired, the barrier line cannot endure the contraction in the length direction, and the pattern end portion is The phenomenon of jumping up may occur. The pattern is dropped at the time of sealing the panel, the dropped pattern remains on the panel, and the pixels are crushed, so that the yield is reduced. There are issues such as.
【０００７】本発明は、上述した課題に対処して創案し
たものであって、その目的とする処は、障壁端部の跳ね
上がり現象を防止し、歩留りのよいプラズマディスプレ
イパネルの障壁構造を提供することにある。The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a barrier structure for a plasma display panel which prevents a jumping phenomenon of the barrier end portion and has a high yield. Especially.
【０００８】[0008]
【課題を解決するための手段】そして、上記目的を達成
するための手段としての本発明のプラズマディスプレイ
パネルの障壁構造は、一定の空間を隔てて一対の絶縁板
を配し、該絶縁板の内側に相対向して交差するアノード
電極群とカソード電極群を設け、かつ該両電極群間にフ
ォトリソグラフィ法による障壁を形成したプラズマディ
スプレイパネルにおいて、該障壁を多層構造とすると共
に、該障壁の上層と下層との組成を変え、かつ焼成時に
おける該下層と前記絶縁板との密着性を強くした構成と
している。A barrier structure of a plasma display panel according to the present invention as means for achieving the above object comprises a pair of insulating plates which are spaced apart from each other by a certain space. In a plasma display panel in which an anode electrode group and a cathode electrode group that face each other and face each other are provided inside and a barrier is formed between the two electrode groups by a photolithography method, the barrier has a multilayer structure and The composition of the upper layer and the lower layer is changed, and the adhesion between the lower layer and the insulating plate during firing is strengthened.
【０００９】また、本発明の他のプラズマディスプレイ
パネルの障壁構造は、前記発明において、障壁の上層と
下層の含有ガラス組成が異なり、かつ該下層の含有ガラ
ス組成の屈伏点が、上層の含有ガラス組成の屈伏点より
低く、該上層と下層の含有ガラス組成の屈伏点の差が、
１〜１００℃である構成、更に障壁のガラス組成が、下
層より上層に向けて段階的に変化した多層構造とした構
成としている。Further, in another barrier structure of a plasma display panel of the present invention, in the above invention, the glass composition contained in the upper layer and the lower layer of the barrier is different, and the sag point of the glass composition contained in the lower layer is the glass contained in the upper layer. Lower than the sag point of the composition, the difference in the sag point of the glass composition of the upper layer and the lower layer,
The temperature is 1 to 100 ° C., and the glass composition of the barrier has a multi-layer structure in which the glass composition changes stepwise from the lower layer to the upper layer.
【００１０】[0010]
【作用】本発明のプラズマディスプレイパネルの障壁構
造は、アノード電極群とカソード電極群間に形成される
障壁を多層構造とし、かつ該障壁の上層と下層との組成
を変え、かつ焼成時における該下層と絶縁板との密着性
を強くしているので、該障壁の焼成の際、該上層がフリ
ーに収縮するものの、その下層が上層の収縮を規制し、
その跳ね上がりを抑制できるように作用する。In the barrier structure of the plasma display panel of the present invention, the barrier formed between the anode electrode group and the cathode electrode group has a multilayer structure, and the composition of the upper layer and the lower layer of the barrier is changed, Since the adhesion between the lower layer and the insulating plate is strengthened, the upper layer shrinks freely during firing of the barrier, but the lower layer regulates the shrinkage of the upper layer,
It acts so as to suppress the bounce.
【００１１】また、障壁の下層の含有ガラスの屈伏点
を、上層の含有ガラスの屈伏点より低くして構成した場
合は、焼成時の流動性を向上させ、該障壁が自重によ
り、絶縁板側に垂れ、該絶縁板と下層との密着性が強く
なって、その跳ね上がりを抑制できるように作用する。Further, when the sagging point of the glass contained in the lower layer of the barrier is set to be lower than the sag point of the glass contained in the upper layer, the fluidity at the time of firing is improved, and the barrier itself is attached to the insulating plate side due to its own weight. And the adhesiveness between the insulating plate and the lower layer becomes strong, and acts to suppress the jumping up.
【００１２】[0012]
【実施例】以下、図面を参照しながら、本発明を具体化
した実施例について説明する。ここに、図１〜図３は、
本発明の一実施例を示し、図１はプラズマディスプレイ
パネルの基本単位を示す模式図、図２はフォトリソグラ
フィ法によって障壁形成を行う工程を説明するための説
明図、図３は本実施例の障壁構造と、従来例の障壁構造
の相違を説明するための障壁端部の斜視図である。Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are as follows.
1 shows an embodiment of the present invention, FIG. 1 is a schematic view showing a basic unit of a plasma display panel, FIG. 2 is an explanatory view for explaining a step of forming a barrier by a photolithography method, and FIG. 3 is a view of this embodiment. It is a perspective view of a barrier end part for demonstrating the difference between a barrier structure and the barrier structure of a prior art example.
【００１３】本実施例のプラズマディスプレイパネル
は、概略すると、前面板１と後面板２の内側にアノード
電極３とカソード電極４が形成され、該両電極３，４間
に障壁５が形成され、かつ該両電極３，４間に希ガスが
封入され、両電極３，４の交差部が１つの画素に対応す
る構成とされている。In outline, the plasma display panel of this embodiment has an anode electrode 3 and a cathode electrode 4 formed inside a front plate 1 and a rear plate 2, and a barrier 5 formed between the electrodes 3 and 4. In addition, a rare gas is filled between the electrodes 3 and 4, and the intersection of the electrodes 3 and 4 corresponds to one pixel.
【００１４】前面板１と後面板２は、ガラス板等よりな
る絶縁板であって、前面板１の内側には、アノード電極
３が平行に複数本設けられ、また後面板２の内側には、
カソード電極４が、アノード電極３と直交するように複
数本設けられている。ここで、カソード電極４は、Ｎ
ｉ，Ｃｕ，Ａｇ，Ｐｄ等の導体金属、あるいはこれらの
合金が用いられ、更にこれらの金属に少量のガラスを混
入したペーストが用いられている。また、アノード電極
３は、酸化インジウム、酸化スズを蒸着した透明電極
（ＩＴＯ電極・Indium-Tin-Oxideの略）が用いられてい
る。The front plate 1 and the rear plate 2 are insulating plates made of a glass plate or the like. Inside the front plate 1, a plurality of anode electrodes 3 are provided in parallel, and inside the rear plate 2 are arranged. ,
A plurality of cathode electrodes 4 are provided so as to be orthogonal to the anode electrodes 3. Here, the cathode electrode 4 is N
Conductive metals such as i, Cu, Ag, and Pd, or alloys thereof are used, and a paste in which a small amount of glass is mixed with these metals is used. As the anode electrode 3, a transparent electrode (ITO electrode / Indium-Tin-Oxide) formed by vapor deposition of indium oxide or tin oxide is used.
【００１５】また、障壁５は、二層構造よりなり、下層
７と上層６とで、異なる絶縁ペーストを用いて形成して
いる。下層７の絶縁ペーストとしては、SiO2：１８重量
％、Al2O3 ：２重量％、Fe2O3 ：１０重量％、Cr2O3 ：
３重量％、MnO ：７重量％、CoO ：２重量％、PbO ：４
６重量％、B2O3：１２重量％からなる黒色セラミック粉
末：１００重量部に紫外線硬化樹脂：５０重量部および
溶剤を混合してスリップとしたものを用いている。ま
た、上層６の絶縁ペーストとしては、SiO2：１５重量
％、Al2O3 ：２０重量％、Fe2O3 ：１０重量％、Cr
2O3 ：３重量％、MnO ：７重量％、CoO ：２重量％、Pb
O ：３５重量％、B2O3：８重量％からなる黒色セラミッ
ク粉末：１００重量部に紫外線硬化樹脂：５０重量部お
よび溶剤を混合してスリップとしたものを用いている。The barrier 5 has a two-layer structure, and the lower layer 7 and the upper layer 6 are formed by using different insulating pastes. As the insulating paste of the lower layer 7, SiO 2 : 18% by weight, Al 2 O 3 : 2% by weight, Fe 2 O 3 : 10% by weight, Cr 2 O 3 :
3% by weight, MnO: 7% by weight, CoO: 2% by weight, PbO: 4
6 wt%, B 2 O 3: 12 wt% made of black ceramic powder: 100 parts by weight of ultraviolet curing resin: by mixing 50 parts by weight of solvent is used after the slip. As the insulating paste for the upper layer 6, SiO 2 : 15% by weight, Al 2 O 3 : 20% by weight, Fe 2 O 3 : 10% by weight, Cr
2 O 3 : 3 wt%, MnO: 7 wt%, CoO: 2 wt%, Pb
A black ceramic powder consisting of O: 35% by weight and B 2 O 3 : 8% by weight, 100 parts by weight, a UV curable resin: 50 parts by weight and a solvent were mixed to form a slip.
【００１６】そして、本実施例のプラズマディスプレイ
パネルの障壁構造は、障壁の下層７の含有ガラスの屈伏
点を、上層６の含有ガラスの屈伏点より低くして構成し
ていることより、焼成時の流動性を向上させ、障壁５が
自重により、絶縁板（アノード電極側）１側に垂れ、絶
縁板１と下層７との密着性が強くなって、その跳ね上が
りを抑制できる。また、下層７と上層６とでは、その含
有ガラス組成の屈伏点の差が、１〜１００℃あり、かつ
上層６に比べて下層７の含有ガラス組成の屈伏点が低く
されているので、障壁５をバランス良く焼成できる。す
なわち、下層７と上層６の含有ガラス組成の屈伏点の差
が、１００℃を超えると上層側と下層側の焼成時のパタ
ーンの保形性、緻密性の差が大きくなり、障壁５をバラ
ンス良く焼成できなくなる。In the barrier structure of the plasma display panel of this embodiment, the glass contained in the lower layer 7 of the barrier is set to have a lower yield point than the glass contained in the upper layer 6, so that the barrier structure during firing can be improved. And the barrier 5 hangs down to the side of the insulating plate (anode electrode side) 1 due to its own weight, the adhesiveness between the insulating plate 1 and the lower layer 7 becomes strong, and the jumping up can be suppressed. Further, the lower layer 7 and the upper layer 6 have a difference in sag point of the contained glass composition of 1 to 100 ° C., and the sag point of the contained glass composition of the lower layer 7 is lower than that of the upper layer 6, so that the barrier 5 can be baked with good balance. That is, when the difference in the sag points of the glass compositions of the lower layer 7 and the upper layer 6 exceeds 100 ° C., the difference in the shape retention and the denseness of the patterns during firing between the upper layer side and the lower layer side becomes large, and the barrier 5 is balanced. It will not burn well.
【００１７】次に、本実施例の作用・効果を確認するた
めに、本実施例のプラズマディスプレイパネルの障壁構
造を、図２（ａ）〜（ｅ）に示すような方法で形成し、
従来例のプラズマディスプレイパネルの障壁構造と比較
した。なお、本実施例の障壁構造としては、前述した下
層用と上層用の二種類のスリップを製造し、下層用のス
リップを、アノード電極の形成された絶縁板（ガラス基
板）上に１０〜５０μｍ厚みになるように塗布し、第一
層を形成（図２ａ参照）すると共に、予め第一層の非露
光部８をマスク９により露光を防ぎながら、高圧水銀灯
を用いて紫外線照射し、露光部１０を硬化させ、次に、
この工程を繰り返して、第二層、第三層を積層し、乾燥
厚み：約１００μｍの形成層を得て（図２ｂ参照）、更
に、該第三層の上に、上層用のスリップを用い、第一層
〜第三層と同様にして、塗布・乾燥・露光を繰り返して
積層（第四層〜第六層）し、最終的に、総厚み：１９０
μｍの形成層（図２ｃ参照）とした後、該形成層の現像
を一度で行い、非露光部８を溶出することにより、パタ
ーニングを終了し、その後、これを５３０℃，１５分間
で焼成することで形成して、約１６０μｍの厚みの障壁
５としたものを用いた。ここで、コーティング（塗布）
方法としては、ドクターブレード法、ロールコーター法
等の何れを用いてもよい。これに対して、従来例のプラ
ズマディスプレイパネルの障壁構造としては、前述した
下層用のスリップを用いて、第一層〜第六層よりなる約
１６０μｍの厚みの障壁を用いた。Next, in order to confirm the operation and effect of this embodiment, the barrier structure of the plasma display panel of this embodiment is formed by the method as shown in FIGS.
The comparison was made with the barrier structure of the conventional plasma display panel. As the barrier structure of this example, two types of slips for the lower layer and the upper layer described above were manufactured, and the slips for the lower layer were formed on the insulating plate (glass substrate) on which the anode electrode was formed in an amount of 10 to 50 μm. The first layer is formed by coating so as to have a thickness (see FIG. 2a), and while the non-exposed portion 8 of the first layer is prevented from being exposed by the mask 9 in advance, ultraviolet irradiation is performed using a high pressure mercury lamp to expose the exposed portion. Cure 10 and then
By repeating this process, the second layer and the third layer are laminated to obtain a forming layer having a dry thickness of about 100 μm (see FIG. 2b), and a slip for the upper layer is further used on the third layer. In the same manner as the first layer to the third layer, coating, drying and exposure are repeated to form a laminate (fourth layer to sixth layer), and finally a total thickness: 190.
After the formation layer having a thickness of μm (see FIG. 2c), the formation layer is developed at one time, and the unexposed portion 8 is eluted to complete the patterning, and thereafter, this is baked at 530 ° C. for 15 minutes. Then, the barrier 5 having a thickness of about 160 μm was formed. Where coating
As a method, any of a doctor blade method, a roll coater method and the like may be used. On the other hand, as the barrier structure of the conventional plasma display panel, a barrier having a thickness of about 160 μm including the first layer to the sixth layer was used by using the slip for the lower layer described above.
【００１８】そして、本実施例の障壁構造と、従来例の
障壁構造とを比較した処、本実施例の障壁構造の場合、
図３（ａ）に示すように、障壁端部の跳ね上がりが認め
られなかったのに対して、従来例の障壁構造の場合、図
３（ｂ）に示すように、その障壁端部に焼成時における
収縮による跳ね上がりが認められた。これは、本実施例
の障壁構造の場合、障壁の下層の含有ガラスの屈伏点
が、上層の含有ガラスの屈伏点より低くして構成してい
ることより、焼成時の流動性を向上させ、障壁が自重に
より、絶縁板（アノード電極側）側に垂れ、絶縁板と下
層との密着性が強く、また下層と上層との含有ガラス組
成の屈伏点の差を、１〜１００℃としていることより、
焼成時のパターンの保形性、緻密性の差を小さくでき、
かつ障壁がバランス良く焼成できていることによること
が確認できた。Then, comparing the barrier structure of this embodiment with the barrier structure of the conventional example, the barrier structure of this embodiment shows that
As shown in FIG. 3A, no jumping up of the barrier end was observed, whereas in the case of the conventional barrier structure, as shown in FIG. Bounce due to contraction was observed. This is, in the case of the barrier structure of the present embodiment, the sag point of the contained glass in the lower layer of the barrier is configured to be lower than the sag point of the contained glass in the upper layer, thereby improving the fluidity during firing, The barrier hangs down to the side of the insulating plate (anode electrode side) due to its own weight, the adhesiveness between the insulating plate and the lower layer is strong, and the difference in the sag points of the glass composition of the lower layer and the upper layer is 1 to 100 ° C. Than,
Differences in pattern shape retention and compactness during firing can be reduced,
Moreover, it was confirmed that the barrier was burned in a good balance.
【００１９】ところで、本実施例の障壁構造にあって
も、障壁の下層の層厚みが、１０μｍより薄い場合は、
従来例の場合と同様に、下地の絶縁板との密着状態と余
り変化がなく、また１５０μｍを超えると、上層側を緻
密にした際に、下層側の保形性が悪くなることも確認で
きた。従って、好ましくは、二種類のスリップを用いた
障壁構造の場合、下層の厚みは、１０〜１５０μｍの範
囲が好ましいことを確認した。By the way, even in the barrier structure of this embodiment, when the layer thickness of the lower layer of the barrier is less than 10 μm,
As in the case of the conventional example, there is not much change from the state of close contact with the underlying insulating plate, and if it exceeds 150 μm, it can be confirmed that the shape retention of the lower layer becomes poor when the upper layer is made dense. It was Therefore, preferably, in the case of the barrier structure using two types of slips, it was confirmed that the thickness of the lower layer is preferably in the range of 10 to 150 μm.
【００２０】なお、本発明は、上述した実施例に限定さ
れるものでなく、本発明の要旨を変更しない範囲内で変
形実施できる構成を含む。因みに、前述した実施例にお
いては、二種類のスリップを用いた構成で説明したが、
複数種類のスリップを用いた多層構造とした構成として
もよいことは当然である。また、前述した実施例では、
アノード電極側の絶縁板上に障壁を形成する例で示した
が、カソード電極側の絶縁板上に障壁を形成する場合に
おいても同等の効果を有する。The present invention is not limited to the above-described embodiments, but includes configurations that can be modified and implemented within the scope of the present invention. Incidentally, in the above-mentioned embodiment, the configuration using two types of slips has been described.
It goes without saying that a multi-layer structure using a plurality of types of slips may be used. Further, in the above-mentioned embodiment,
The example in which the barrier is formed on the insulating plate on the anode electrode side has been shown, but the same effect can be obtained when the barrier is formed on the insulating plate on the cathode electrode side.
【００２１】[0021]
【発明の効果】以上の説明より明らかなように、本発明
のプラズマディスプレイパネルの障壁構造によれば、ア
ノード電極群とカソード電極群間に形成される障壁を多
層構造とし、かつ該障壁の上層と下層との組成を変え、
かつ焼成時における該下層と絶縁板との密着性を強くし
ているので、該障壁の焼成の際、該上層がフリーに収縮
するものの、その下層が上層の収縮を規制し、その跳ね
上がりを抑制できるという効果を有する。As is apparent from the above description, according to the barrier structure of the plasma display panel of the present invention, the barrier formed between the anode electrode group and the cathode electrode group has a multi-layered structure and the upper layer of the barrier layer is formed. And the composition of the lower layer,
In addition, since the adhesion between the lower layer and the insulating plate is increased during firing, the upper layer shrinks freely during firing of the barrier, but the lower layer regulates the shrinkage of the upper layer and suppresses its jumping up. It has the effect of being able to.
【００２２】また、障壁の上層と下層の含有ガラスの屈
伏点を、上層の含有ガラスの屈伏点より低くして構成し
た場合にあっては、焼成時の流動性を向上させ、該障壁
が自重により、絶縁板側に垂れ、該絶縁板と下層との密
着性が強くなって、その跳ね上がりを抑制できるという
効果を有する。Further, in the case where the barrier glass of the upper layer and the lower layer of the contained glass has a lower yield point than that of the upper layer of contained glass, the fluidity at the time of firing is improved so that the barrier is self-weighted. As a result, there is an effect that the adhesiveness between the insulating plate and the lower layer hangs down toward the insulating plate side and the jumping up can be suppressed.
【図１】プラズマディスプレイパネルの基本単位を示す
模式図である。FIG. 1 is a schematic diagram showing a basic unit of a plasma display panel.
【図２】フォトリソグラフ法によって障壁形成を行う工
程を説明するための説明図である。FIG. 2 is an explanatory diagram for explaining a step of forming a barrier by a photolithographic method.
【図３】本実施例の障壁構造と、従来例の障壁構造の相
違を説明するための障壁端部の斜視図である。FIG. 3 is a perspective view of a barrier end portion for explaining the difference between the barrier structure of the present embodiment and the barrier structure of the conventional example.
１・・・前面板、２・・・後面板、３・・・アノード電
極、４・・・カソード電極、５・・・障壁、６・・・上
層、７・・・下層、８・・・非露光部、９・・・マス
ク、１０・・・露光部DESCRIPTION OF SYMBOLS 1 ... Front plate, 2 ... Rear plate, 3 ... Anode electrode, 4 ... Cathode electrode, 5 ... Barrier, 6 ... Upper layer, 7 ... Lower layer, 8 ... Non-exposure part, 9 ... Mask, 10 ... Exposure part
Claims (3)
し、該絶縁板の内側に相対向して交差するアノード電極
群とカソード電極群を設け、かつ該両電極群間にフォト
リソグラフィ法による障壁を形成したプラズマディスプ
レイパネルにおいて、該障壁を多層構造とすると共に、
該障壁の上層と下層との組成を変え、かつ焼成時におけ
る該下層と前記絶縁板との密着性を強くしたことを特徴
とするプラズマディスプレイパネルの障壁構造。1. A pair of insulating plates are arranged with a certain space therebetween, and an anode electrode group and a cathode electrode group which face each other and intersect each other are provided inside the insulating plates, and photolithography is provided between the two electrode groups. In a plasma display panel having a barrier formed by the method, the barrier has a multilayer structure, and
A barrier structure for a plasma display panel, characterized in that the composition of the upper layer and the lower layer of the barrier is changed, and the adhesion between the lower layer and the insulating plate during firing is strengthened.
なり、かつ該下層の含有ガラス組成の屈伏点が、上層の
含有ガラス組成の屈伏点より低く、該上層と下層の含有
ガラス組成の屈伏点の差が、１〜１００℃である請求項
１に記載のプラズマディスプレイパネルの障壁構造。2. The glass composition of the upper and lower layers of the barrier is different, and the sag point of the glass composition of the lower layer is lower than the sag point of the glass composition of the upper layer, and the sag of the glass composition of the upper layer and the lower layer is low. The barrier structure of a plasma display panel according to claim 1, wherein the difference between the points is 1 to 100 ° C.
けて段階的に変化する多層構造とした請求項２に記載の
プラズマディスプレイパネルの障壁構造。3. The barrier structure of a plasma display panel according to claim 2, wherein the barrier glass composition has a multilayer structure in which the glass composition gradually changes from the lower layer toward the upper layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31609992A JP2876047B2 (en) | 1992-10-30 | 1992-10-30 | Method of manufacturing barrier for plasma display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31609992A JP2876047B2 (en) | 1992-10-30 | 1992-10-30 | Method of manufacturing barrier for plasma display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06150828A true JPH06150828A (en) | 1994-05-31 |
| JP2876047B2 JP2876047B2 (en) | 1999-03-31 |
Family
ID=18073233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31609992A Expired - Lifetime JP2876047B2 (en) | 1992-10-30 | 1992-10-30 | Method of manufacturing barrier for plasma display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2876047B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100464301B1 (en) * | 1998-04-13 | 2005-04-06 | 삼성에스디아이 주식회사 | Gas discharge display device partition wall manufacturing method |
| JP2007012415A (en) * | 2005-06-30 | 2007-01-18 | Toray Ind Inc | Manufacturing method for panel display member |
| KR100718995B1 (en) * | 2004-09-02 | 2007-05-16 | 엘지전자 주식회사 | Method of manufacturing plasma display panel and plasma display panel including partition wall |
| KR100743714B1 (en) * | 2005-04-21 | 2007-07-30 | 엘지전자 주식회사 | Plasma display panel |
-
1992
- 1992-10-30 JP JP31609992A patent/JP2876047B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100464301B1 (en) * | 1998-04-13 | 2005-04-06 | 삼성에스디아이 주식회사 | Gas discharge display device partition wall manufacturing method |
| KR100718995B1 (en) * | 2004-09-02 | 2007-05-16 | 엘지전자 주식회사 | Method of manufacturing plasma display panel and plasma display panel including partition wall |
| KR100743714B1 (en) * | 2005-04-21 | 2007-07-30 | 엘지전자 주식회사 | Plasma display panel |
| JP2007012415A (en) * | 2005-06-30 | 2007-01-18 | Toray Ind Inc | Manufacturing method for panel display member |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2876047B2 (en) | 1999-03-31 |
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