JPH0614512B2 - Laser CVD equipment - Google Patents
Laser CVD equipmentInfo
- Publication number
- JPH0614512B2 JPH0614512B2 JP58177631A JP17763183A JPH0614512B2 JP H0614512 B2 JPH0614512 B2 JP H0614512B2 JP 58177631 A JP58177631 A JP 58177631A JP 17763183 A JP17763183 A JP 17763183A JP H0614512 B2 JPH0614512 B2 JP H0614512B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- substrate
- reaction
- laser cvd
- reaction cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【発明の詳細な説明】 本発明は、レーザーによるＣＶＤ法（Chemical Vaper
Deposition Method）とこの方法を実施するための装
置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a CVD (Chemical Vapor) method using a laser.
Deposition Method) and an apparatus for performing this method.
近年、レーザーＣＶＤ法の開発研究が盛んにすゝめられ
ている。すなわち、反応用セル内に一種又は数種の気体
又は液体を入れ、これを強いレーザー光で励起すると、
シングルフォトン又はマルチフオトン吸収によつて反応
性気体や液体が分解したり結合したりして核が成長して
反応生成物が得られるので、これらの反応生成物を反応
用セル内に配置した基板上に付着形成するものである。In recent years, research and development on the laser CVD method has been actively pursued. That is, when one or several kinds of gas or liquid is put in the reaction cell and excited by strong laser light,
Reactive gases and liquids are decomposed or combined by single photon or multi-photon absorption to grow nuclei, and reaction products are obtained.Therefore, these reaction products on the substrate placed in the reaction cell. It adheres to and is formed on.
ところで、レーザーＣＶＤ法での技術的課題の一つとし
て、反応用セルの内壁に反応生成物が付着し、殊に励起
レーザービームの入射する反応用セルの窓の内面への反
応生成物の付着の度合が大きく、窓に付着した反応生成
物によつて励起レーザービームの光量を低下させ、結果
として反応効率を下げることになる。更にいま一つの課
題として、反応用セル内に配置した基板を加熱する場
合、励起レーザービームの照射によつて分解した反応生
成物である微粒子が対流を起こし、周辺の内壁に付着す
るため基板上への付着効率の向上はあまり期待できな
い。By the way, as one of the technical problems in the laser CVD method, the reaction product adheres to the inner wall of the reaction cell, and in particular, the reaction product adheres to the inner surface of the window of the reaction cell into which the excitation laser beam enters. The reaction product attached to the window reduces the light amount of the excitation laser beam, resulting in a reduction in reaction efficiency. As another issue, when heating the substrate placed in the reaction cell, the reaction product particles decomposed by the irradiation of the excitation laser beam cause convection, and adhere to the inner wall of the periphery, so that the particles on the substrate The improvement of the adhesion efficiency to the can not be expected so much.
本発明は上記に鑑みなされたものであつて、励起レーザ
ーとして横方向放電型パルスレーザー源からの線状の紫
外レーザー光を用いて、基板上の所望個所に効率良く又
は大面積で反応、生成物を膜状に形成せしめるレーザー
ＣＶＤ法及びこの方法の実施に直接使用するための装置
を提供することを目的とする。The present invention has been made in view of the above, using a linear ultraviolet laser light from a lateral discharge type pulse laser source as an excitation laser, efficiently or in a large area at a desired position on the substrate, production It is an object of the present invention to provide a laser CVD method for forming an object in a film shape and an apparatus for direct use for carrying out this method.
これらの目的は、前記の特許請求の範囲に記載された本
発明の構成によつて達成されるが、以下実施例により本
発明の構成及び効果を詳しく説明する。These objects are achieved by the constitution of the present invention described in the claims, but the constitution and effects of the present invention will be described in detail with reference to the following examples.
図は本発明のレーザーＣＶＤ法を実施するための装置の
一例である。１は一種又は数種の気体又は液体を入れる
反応用セルであつて、石英、合成石英、ＵＶガラス、Na
Cl，CaF2，MgF2 PMMA などの紫外線透過性の基板２
と、スペーサー３によつて数mmの狭い間隔で対置する基
板４と、光化学反応性の気体又は液体の導入口５で構成
される。図示していないが、エキシマレーザーなど横方
向放電型パルスレーザー源からの紫外レーザー光６はエ
ネルギー分布が横方向が均一で縦方向がガウシアン分布
となつているので、これを二曲面シリンドリカルレンズ
７と平面鏡８を介して基板２の一面に線状のレーザービ
ームに変換して照射し、この線状のレーザービームを矢
印９方向への二曲面シリンドリカル７と平面鏡８の移動
とにより構成される光学系の又は反応用セル１の移動に
よつて基板２面で掃引する。その結果、反応用セル１内
の光化学反応気体又は液体に接触する基板２，４の表面
には反応生成物が膜状に効率良く形成される。The figure shows an example of an apparatus for carrying out the laser CVD method of the present invention. Reference numeral 1 is a reaction cell containing one or several kinds of gas or liquid, such as quartz, synthetic quartz, UV glass, and Na.
Substrate 2 that is transparent to ultraviolet light, such as Cl, CaF 2 and MgF 2 PMMA
And a substrate 4 opposed by a spacer 3 at a narrow interval of several mm, and an inlet 5 for a photochemically reactive gas or liquid. Although not shown, the ultraviolet laser light 6 from a horizontal discharge type pulse laser source such as an excimer laser has a uniform energy distribution in the horizontal direction and a Gaussian distribution in the vertical direction. An optical system configured by converting a linear laser beam onto one surface of the substrate 2 through a plane mirror 8 and irradiating the same, and by arranging the linear laser beam in the direction of an arrow 9 to move the two-curved cylindrical surface 7 and the plane mirror 8. Or the movement of the reaction cell 1 sweeps the surface of the substrate 2. As a result, reaction products are efficiently formed in a film form on the surfaces of the substrates 2 and 4 that come into contact with the photochemical reaction gas or liquid in the reaction cell 1.
このように本発明のレーザーＣＶＤ法では、従来、励起
レーザー光の入射窓へ、反応生成物が付着し、これによ
つて反応用セル内でのレーザー光の光量が減少するとい
う悪影響を、逆に積極的に利用するものであり、横方向
放電型パルスレーザー源からの線状の紫外レーザー光
で、狭い間隔で対置した基板を掃引するので、反応用セ
ル内での反応生成物である微粒子の対流も少なく、基板
に反応生成物を膜状に効率良く形成できる効果がある。
又、基板の所望個所を選択的に掃引してその部分に反応
生成物を膜状に形成することができ、大面積の太陽電池
や静電複写機のドラム用として一様で大面積の膜の量産
に適する。As described above, in the laser CVD method of the present invention, conventionally, the adverse effect that the reaction product adheres to the entrance window of the excitation laser light, thereby reducing the light amount of the laser light in the reaction cell, is reversed. The linear discharge ultraviolet laser light from the lateral discharge pulsed laser source sweeps the substrates placed at narrow intervals so that the fine particles that are the reaction products in the reaction cell can be used. There is also little convection and there is an effect that the reaction product can be efficiently formed into a film on the substrate.
In addition, a desired portion of the substrate can be selectively swept to form a reaction product in a film shape on that portion, and a uniform and large area film can be used for a large area solar cell or a drum of an electrostatic copying machine. Suitable for mass production.
なお、図の装置において、二曲面シリンドリカルレンズ
７を振動手段１０によつて線状のビームの方向に振動さ
せることにより、基板上に形成される膜状の反応生成物
に生じる干渉縞模様を除去することができる。又、本発
明では、反応用セルを数mmの間隔で対置した２枚以上の
基板で構成し、いずれも光化学反応性気体又は液体に接
触させてもよい。In the apparatus shown in the figure, the bi-curved cylindrical lens 7 is vibrated by the vibrating means 10 in the direction of the linear beam to remove the interference fringe pattern generated in the film-like reaction product formed on the substrate. can do. Further, in the present invention, the reaction cell may be composed of two or more substrates that are opposed to each other at intervals of several mm, and both may be brought into contact with a photochemically reactive gas or liquid.
実施例 図の装置において、２mmの間隔で対置した大きさ１００
×１００mm、厚み３mmの合成石英基板で構成した反応用
セル内に、反応性ガスとして２０Torrのジシランガス又
はモノシランガスを満たし、ArFエキシマレーザー（波
長１９３ｎｍ）又はKrFエキシマレーザー（波長２４９
ｎｍ）を線状のビームにして１００Hzで掃引した結果、
ジシランガスの場合前者ではシングルフオトン吸収で、
後者では２フオトン吸収でそれぞれ反応性ガスが分解
し、又モノシランガスの場合はいずれも２フオトン吸収
で反応性ガスが分解し、反応用セルの内側となる２つの
基板表面にＳｉ膜を緻密に効率良く形成することができ
た。Example In the apparatus shown in the figure, a size of 100 with two mm intervals
A reaction cell composed of a synthetic quartz substrate having a size of 100 mm and a thickness of 3 mm was filled with 20 Torr of disilane gas or monosilane gas as a reactive gas, and ArF excimer laser (wavelength 193 nm) or KrF excimer laser (wavelength 249 nm) was used.
(nm) as a linear beam and swept at 100 Hz,
In the case of disilane gas, the former absorbs single photons,
In the latter case, the reactive gas is decomposed by two-photon absorption, and in the case of monosilane gas, the reactive gas is decomposed by two-photon absorption in both cases, and the Si film is densely and efficiently formed on the two substrate surfaces inside the reaction cell. It was well formed.
図は本発明のレーザーＣＶＤ法を実施するための装置の
一例を示す光学系。 図中の符号： １……反応用セル、 ２，４……基板、 ６……紫外レーザー光、 ７……二曲面シリンドリカルレンズ、 ８……平面鏡、１０……振動手段。The figure shows an optical system showing an example of an apparatus for carrying out the laser CVD method of the present invention. Reference numerals in the figure: 1 ... Reaction cell, 2, 4 ... Substrate, 6 ... Ultraviolet laser light, 7 ... Bi-curved cylindrical lens, 8 ... Plane mirror, 10 ... Vibrating means.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭57−10920（ＪＰ，Ａ) 特開 昭52−143755（ＪＰ，Ａ) 「日経エレクトロニクス」1982年２月15 日号，Ｐ．124〜５ ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-57-10920 (JP, A) JP-A-52-143755 (JP, A) "Nikkei Electronics," February 15, 1982, p. 124-5
Claims (1)
状のビームに変換する二曲面シリンドリカルレンズ及
び、 光化学反応性気体又は液体が接触している面とは反対の
紫外線透過性基板の面を前記の線状のビームで掃引する
手段 を備えたことを特徴とするレーザーＣＶＤ装置。1. A transverse discharge type pulse laser source, a two-curved surface cylindrical lens which receives an ultraviolet laser beam from the pulse laser source and converts it into a linear beam, and a surface in contact with a photochemically reactive gas or liquid. A laser CVD apparatus comprising means for sweeping the opposite surface of the ultraviolet transparent substrate with the linear beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58177631A JPH0614512B2 (en) | 1983-09-26 | 1983-09-26 | Laser CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58177631A JPH0614512B2 (en) | 1983-09-26 | 1983-09-26 | Laser CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6070722A JPS6070722A (en) | 1985-04-22 |
| JPH0614512B2 true JPH0614512B2 (en) | 1994-02-23 |
Family
ID=16034375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58177631A Expired - Lifetime JPH0614512B2 (en) | 1983-09-26 | 1983-09-26 | Laser CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614512B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH065778B2 (en) * | 1985-12-17 | 1994-01-19 | 株式会社富士電機総合研究所 | Method for manufacturing optical semiconductor device |
| US5424244A (en) | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710920A (en) * | 1980-06-23 | 1982-01-20 | Canon Inc | Film forming process |
| JPS5848415A (en) * | 1981-09-18 | 1983-03-22 | Hitachi Ltd | Method of forming semiconductor single crystal film |
-
1983
- 1983-09-26 JP JP58177631A patent/JPH0614512B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| 「日経エレクトロニクス」１９８２年２月１５日号，Ｐ．１２４〜５ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6070722A (en) | 1985-04-22 |
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