JPH0614259B2 - Display device - Google Patents

Description

The present invention relates to an insulating gate type field effect semiconductor device (hereinafter referred to as IG
F) is used to control and display each of the picture element groups arranged in a matrix, and relates to a flat panel display device of an active matrix system, particularly a color display device.

This invention is a liquid crystal (LCD) having a function of controlling the amount of light transmission.
Electro-chromic (ECD)
With regard to the electroluminescence (EL) that emits light by itself, each pixel and the semiconductor device that applies a voltage or current to this pixel to control the presence or absence of its electrical signal, in particular IGF, Is intended to be controlled as an active element.

Conventionally, in such a semiconductor display device, the matrix circuit is shown in FIG. 1, but the picture element group (10) arranged in a matrix has one IGF (2) and a display element (3) (here, it is referred to as an LCD). Are connected in series, and the gate electrode of this IGF is arranged in the X direction, and the source and drain are arranged in the Y direction.

However, all sides of the LCD that are not connected to the IGF are simply kept at ground level in common and their voltage levels are common to all elements.

For this reason, the counter electrode (3) of this LCD is only provided with the CTF (translucent conductive film) on the entire surface inside the substrate facing the substrate on which the IGF is provided.

With the flat display device with this structure, RGB
In order to configure each of the three primary colors of red, green, and blue, the number of active elements required is three times that of a monochrome display device.

Furthermore, this three-fold degree of integration means that the number of picture elements is 525 × 640 (shape
It was three times as large as that of the 330K element), and the degree of high integration density made it impossible to put it into practical use.

The present invention has a plurality of pixel electrodes arranged in a matrix on a first substrate having an insulating surface, and an insulating gate type semiconductor device is connected to each of the electrodes, facing the first substrate at a distance. A plurality of counter electrodes are provided in parallel with each other on the second substrate provided in such a manner that a plurality of the counter electrodes are present for one picture element electrode. Is a display device having a plurality of different display states in one picture element region by independently having electric potentials for the one picture element electrode facing each other.

That is, according to the present invention, such a defect is eliminated, and the process that requires precise patterning of IGF (generally using 6 to 8 masks) is on one substrate side, and the wiring for identifying colors and its peripheral circuit are provided. Is provided on the other substrate side.

And the CTF which is the electrode of the picture element connected to one IGF is 1
However, the other electrode, CTF, which forms a pair and opposes this CTF, has three RGB electrodes because RGB is provided.
As a result, in terms of manufacturing, it is possible to first manufacture each of the two independent substrates, perform a quality inspection, and then overlay the non-defective products of the respective products to form a final finished product. As a result, the semiconductor display device has a great feature that its yield can be significantly improved.

The present invention will be described in more detail below with reference to the drawings.

FIG. 2 is a circuit diagram of the present invention made corresponding to the conventional invention of FIG. For the sake of simplicity, the drawing has a matrix arrangement of 3 × 3 (3 × 3 × 3 when RGB is divided). In other words, despite the 27 independent picture elements, the number of IGFs in the matrix can be 9, which is a great feature. Further, a plan view and a vertical sectional view of an actual picture element group are shown in FIG. 4 and FIG. 5, and the space between the electrodes, that is, (3), is formed by the counter electrodes (3), (3 ′), (3 ″). It can be seen that the interval (, (3) ', (3')) (FIG. 4 (B) (32)) may be 5 to 10 .mu.m. These I
Wiring (5), (5 '), (5'') provided in GF is 50 to 100
Since there is μ, it may be awkward for the user to see the panel, but it also has the feature that this number can be reduced to 1/3 compared to the conventional method. As a result, it has been found that the user does not feel uncomfortable.

In Fig. 2, astive element is one IGF
It has a source or drain of (2) and a display element (here, an LCD) (1), (1 '), (1'') connected to one of them. Further, the other is connected to leads (5), (5 '), (5 ") in the Y direction in FIG. Also IG
Gate electrode of F is (4), (4 '), (4'') in X direction
Are linked to.

The counter electrodes (3), (3 '), (3'') of the display element
2 are independent of each other and are connected to the counter electrodes of the display elements arranged in a matrix in the Y direction in FIG. 2, and are connected to the color classification decoder (9).

In the drawing, one substrate has a decoder (7),
(8), IGF (2) and one electrode of the display element are provided, and the counter electrode is separately provided on the other substrate side into three, and the three counter electrodes of each pixel are X-direction, Y-direction or diagonal. In the direction (upper right / lower left direction or upper left / lower right direction), the three opposite electrodes of the other picture elements were connected in association with each other.

This FIG. 2 is provided with RGB electrodes and leads connected in the Y direction, which are control circuits (decoders) for color classification (9).
It is connected to.

The circuit of FIG. 2 has the parasitic capacitances (40), (4
1) occurs between the charge accumulated in the electrode of the display element and the gate electrode. Therefore, the frequency characteristic becomes slow. As a result, LC that does not require high frequency characteristics in this circuit
It is preferred that D 3 is used in the display device.

FIG. 3 is similar to FIG. 2, but the counter electrodes (3), (3 '), (3'') of the display element are connected in the X direction.
Others are the same as in FIG.

In FIG. 3, (11), (12), and
(13) ... (11 ″), (12 ″) and (13 ″) are arranged laterally. Then, the parasitic capacitance (4
0) and (41) increase with the source or drain electrode, but decrease with the gate electrode. Therefore, the third
The circuit shown in the figure has good frequency characteristics, which is convenient when an EL element that generates various colors by changing the frequency is provided as a display element.

4 and 5 are a plan view and a vertical sectional view of the semiconductor display device of the present invention.

The circuit configuration of this drawing corresponds to the structure of FIG.

In the drawing, the IGF is mounted on a substrate (25) having an insulating surface.
(2) is two IGFs that are configured in parallel to form a pair.
(2) and (2 ') are provided. This is important for increasing the driving stress of the IGF.In addition, even if one IGF causes a short circuit or an open defect, it is removed by the IGF laser trimming method and the display element is driven only by the other redundancy. It has a

Regarding this vertical channel type IGF, A in FIG.
A vertical sectional view of -A 'is shown in FIG.

In the drawing, the lower electrode (14) of the IGF (2) is connected to the electrode (22) of the display device (1), and the source or drain (15) is formed on the electrode (14) as a laminate having the same shape.
(Thickness 500 to 3000Å), laminated body (16) (thickness 0.5 to 5μ)
(Actually using silicon nitride film), drain or source
(17) (thickness 500 to 3000Å), electrode (18) that also serves as a lead in the Y direction (thickness 1000 to 5000Å), interlayer insulation film (19) (0.5 to
3 μ) (actually using PIQ) is provided. Further, a non-single crystal semiconductor (including an amorphous structure) (21) to which hydrogen or a halogen element (preferably fluorine) is added so as to cover these, covers these laminated bodies with a thickness of 0.1 to 0.4 μm.

The semiconductor (21) is in ohmic contact with the layers (15) and (17) forming the p or N type source and drain. A silicon oxide or silicon nitride film (thickness 500 to 3000
Å) and a gate electrode (thickness 300 to 3000 Å) made of semiconductor, chromium, titanium, molybdenum, tungsten or a compound thereof thereon (20). The gate electrode is connected to leads (4) 4 ') (4'') forming a bus line in the X direction, and the leads have a thickness of 0.5 to 3 .mu.m. Its sheet resistance is 0.5
Ω / □ or less.

Furthermore, each of the three counter electrodes on the substrate having another insulating surface that resists the electrode (22) of the display element separates RGB, respectively for red (R) (11 ') and green (G). (12 ') and (13') are provided for blue (B). Red, green and blue filters are provided on the upper and lower substrates (26) and (27). This (11), (1
The electrodes of 2, (13) ... (11 ''), (12 ''), (13 '') are also oriented, and the electrodes of each active element are connected to each other in the Y direction. There is. What is particularly important is that a plurality of second electrodes, here three divided electrodes, are provided in a plane corresponding to the area of the first electrode (22) subjected to the orientation treatment. An LCD, for example, a nematic liquid crystal (1) was filled between the two electrodes after the two substrates (25) and (26) were aligned and the periphery was sealed. Furthermore, since the distance between the electrodes (32) is 10 to 20 μ, no distinction is made during actual use and there is no trouble.
This CTF in the X direction also serves as the lead at that time. Therefore, as is apparent from FIG. 2, for example, (5) is set to "1" on the lead side in the Y direction, other (5 ') and (5 ") are set to" 0 ", and (4) in the X direction is set. ), (4 '), (4'') are set to "1", "0", and "1" at the respective levels, and in addition, for example, signals are controlled by the color classification decoder (9). It has been found that by giving R, G, and B, all the elements connected to (5) here can be driven simultaneously, and a predetermined color can be displayed by the signal.

For example, if the electrode (11) for red is set to "1", wiring in the Y direction
The element connected to (5) and the lead (4) in the X direction and the element connected to the wiring (5) and the lead (4 ″) in the X direction can be displayed in red. If the green electrode (12) is set to "1", the wiring (5) will be the same as above.
The element connected to the lead and the lead (4) and the element connected to the wiring (5) and the lead (4 ″) can be made green, and the electrode (13) for blue also has “1”. , The same element can be blue as well as red or green.

In addition, it goes without saying that if all the electrodes for red, green, and blue are set to "1", they become white, and if all of them are set to "0", they become black.

This control can be easily performed from the color classification decoder side (9).

FIG. 5 is a vertical sectional view taken along the line BB 'in FIG. 4 (A). From the drawing, the electrodes on the side of the counter electrode are connected and the lead (1
It can be seen that it also serves as 2 ').

The IGF (2) is provided on the substrate (25) and the electrodes (22) of the display element are also shown. When the display element (24) uses an EL light emitter or a reflective type of LCD, one of the substrates (2
6) is transparent, and glass or Sumitomo Bakelite Smirato 1300 (abbreviated as PES) may be used. As the other substrate (25), it is effective to use a substrate having an insulating film made of plastic or the like on a stainless steel substrate.
In addition, a fluorescent lamp is arranged below the surface of this semiconductor device,
When a full-color display is performed by providing a color filter on one surface of the substrate (25) or (26) of the present invention, it is necessary that both substrates use glass or the like and be transparent.

With the above configuration, when a 100-inch device was provided in a size of 5 cm × 5 cm in a 20-inch test, the yield improvement was remarkable. In the conventional method, the yield was only 3% when the number of defects was 100% or less and the number of defects was 1% or less. However, in the structure of the present invention, a ratter exceeding 10% could be obtained.

Therefore, when the number of elements increases to 525 × 640,
It has been found that the present invention can be expected to further increase its effect.

Further, in the present invention, it is effective to provide the antireflection film (27) on the side viewed by a person, for example, the upper surface of the substrate (26).

In addition, in the present invention, the IGF is a vertical channel type,
Used as two pairs. However, it goes without saying that only one of these may be used or a lateral channel type IGF may be used.

This invention mainly showed the full color type. However, it can also be used as a high-resolution display device. By removing the color filter on the second electrode, the number of picture elements is substantially tripled but the resolution is tripled even though it is a monochrome display. Further, this triple can be doubled or quadrupled by setting the number of second electrodes to two or four or more.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a circuit diagram of a conventional display device. 2 and 3 show circuit diagrams of the display device of the present invention. 4 and 5 are an electric diagram and a longitudinal sectional view of a semiconductor display device of the present invention provided corresponding to the circuit of FIG.

 ─────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-56-99383 (JP, A) JP-A-57-198491 (JP, A) JP-A-57-100467 (JP, A) JP-A-58- 102214 (JP, A)

Claims (1)

[Claims] 1. A plurality of picture element electrodes arranged in a matrix on a first substrate having an insulating surface, an insulating gate type semiconductor device being connected to each of the electrodes, and the first substrate and the first substrate. A plurality of counter electrodes are provided in parallel with each other on the second substrate provided so as to be separated and opposed to each other, and a plurality of the counter electrodes are present for one picture element electrode. A display device, wherein the counter electrode has a plurality of different display states in one picture element region by having electric potentials for the one picture element electrode facing each other independently of each other.