JPH0613257Y2 - Horizontal vapor phase growth equipment - Google Patents
Horizontal vapor phase growth equipmentInfo
- Publication number
- JPH0613257Y2 JPH0613257Y2 JP14030488U JP14030488U JPH0613257Y2 JP H0613257 Y2 JPH0613257 Y2 JP H0613257Y2 JP 14030488 U JP14030488 U JP 14030488U JP 14030488 U JP14030488 U JP 14030488U JP H0613257 Y2 JPH0613257 Y2 JP H0613257Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transfer device
- vapor phase
- phase growth
- substrate transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は、基板面に薄膜を形成する横型気相成長装置に
関し、特に基板を搬送する手段の改善に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a horizontal vapor deposition apparatus for forming a thin film on a surface of a substrate, and more particularly to improvement of means for transporting the substrate.
第3図に示す如く、従来の横型気相成長装置1は、基板
Pに気相成長を行う反応室2と、該基板Pの入れ替えを
行う前室3とをゲート弁4を介して連設すると共に、該
前室3に基板搬送装置5を連設し、かつ該基板搬送装置
5に昇降装置6を連設したものである。As shown in FIG. 3, in the conventional horizontal vapor phase growth apparatus 1, a reaction chamber 2 for performing vapor phase growth on a substrate P and a front chamber 3 for exchanging the substrates P are connected via a gate valve 4. In addition, the substrate transfer device 5 is connected to the front chamber 3, and the lifting device 6 is connected to the substrate transfer device 5.
基板搬送装置5は、前記基板Pを反応室2と前室3との
間で水平方向に搬送するもので、前記前室3にベロー
管、フレキシブル管等の屈曲可能な可撓管7を介して連
設するガイド筒8と、反応室2側の端部に基板載置部9
を有し他端部に内部磁石10を有して該ガイド筒8内を
水平方向に移動するガイド棒11と、該ガイド棒11を
ガイド筒8の外周部に遊嵌したリング状の外部磁石12
を利用して水平方向に移動させる水平駆動機構13とで
構成される。水平駆動機構13は、前記ガイド筒8の両
端に固設された平板上の端板14a,14bに支承さ
れ、外周にネジ部を有する誘導軸15と、これにベルト
16を介して連設するモータ17と、該誘導軸15に一
端部が螺合し他端部が前記外部磁石12に連結する誘導
部材18とから構成され、該モータ17で誘導軸15を
回転させて誘導部材18に回転力を伝達し、該回転力を
受ける誘導部材18が外部磁石12との連結部で回転を
制限されて水平方向に移動し、これによって外部磁石1
2が水平方向に移動してこれに磁気結合する内部磁石1
0の移動を介してガイド棒11を水平方向に移動するも
のである。The substrate transfer device 5 transfers the substrate P in the horizontal direction between the reaction chamber 2 and the front chamber 3, and the front chamber 3 is provided with a bendable flexible tube 7 such as a bellows tube or a flexible tube. And the guide tube 8 that is continuously installed, and the substrate mounting portion 9 at the end portion on the reaction chamber 2 side.
And a ring-shaped external magnet having an inner magnet 10 at the other end and moving horizontally in the guide cylinder 8, and a guide rod 11 loosely fitted to the outer periphery of the guide cylinder 8. 12
And a horizontal drive mechanism 13 for moving the same in the horizontal direction. The horizontal drive mechanism 13 is supported by flat plate end plates 14a and 14b fixed to both ends of the guide tube 8, and is continuously connected to a guide shaft 15 having a threaded portion on the outer periphery thereof and a belt 16 therethrough. It is composed of a motor 17 and a guide member 18 having one end screwed to the guide shaft 15 and the other end connected to the external magnet 12. The motor 17 rotates the guide shaft 15 to rotate the guide member 18. The guide member 18 that transmits the force and receives the rotational force moves in the horizontal direction while being restricted in rotation at the connecting portion with the external magnet 12, whereby the external magnet 1
Internal magnet 1 in which 2 moves horizontally and is magnetically coupled to this
The guide rod 11 is moved in the horizontal direction through the movement of 0.
また、昇降装置6は、前記基板搬送装置5全体を床に固
定された前室3に対して垂直に昇降するもので、昇降部
19とこれを昇降する昇降駆動部20とからなり、該昇
降部19は上端部が平板状に形成され、該平板状の部分
に前記搬送用のモータ17およびガイド筒8両端の端板
14a,14bが適宜の連結部材21,22を介して連
結されている。The elevating device 6 elevates and lowers the entire substrate transfer device 5 with respect to the front chamber 3 fixed to the floor. The elevating device 6 includes an elevating part 19 and an elevating drive part 20 for elevating the elevating part 19. The upper end of the portion 19 is formed in a flat plate shape, and the conveying motor 17 and the end plates 14a, 14b at both ends of the guide cylinder 8 are connected to the flat plate portion via appropriate connecting members 21, 22. .
前記の如く構成された横型気相成長装置1で気相成長を
行うには、まず基板搬送装置5を作動させてガイド棒1
1の基板載置部9を前室3内に後退させ、この状態で前
室3の開閉扉23から基板載置部9上に未処理の基板P
を載置した後、昇降装置6を作動して基板搬送装置5を
上動させ、この状態で基板載置部9を反応室2内のフロ
ーチャンネル24に設けられた保持台25まで前進さ
せ、該保持台25の位置で基板搬送装置5を降下させて
基板Pを保持台25上にセットする。次いで、基板載置
部9を前室3に後退させてゲート弁4を閉じ、RFコイ
ル26に通電して保持台25を介して基板Pを所定の温
度に保持すると共にガス導入管27から気相成長ガスを
導入して気相成長を実施する。なお、基板Pを通過した
気相成長ガスはガス排出管28から排出される。In order to perform the vapor phase growth in the horizontal vapor phase growth apparatus 1 configured as described above, first, the substrate transfer apparatus 5 is operated to operate the guide rod 1.
The substrate mounting portion 9 of No. 1 is retracted into the front chamber 3, and in this state, the unprocessed substrate P is placed on the substrate mounting portion 9 from the opening / closing door 23 of the front chamber 3.
After mounting the substrate, the elevating device 6 is operated to move the substrate transfer device 5 upward, and in this state, the substrate mounting part 9 is advanced to the holding table 25 provided in the flow channel 24 in the reaction chamber 2, The substrate transfer device 5 is lowered at the position of the holding table 25 to set the substrate P on the holding table 25. Next, the substrate platform 9 is moved back to the front chamber 3, the gate valve 4 is closed, the RF coil 26 is energized to keep the substrate P at a predetermined temperature via the holder 25, and the gas is introduced from the gas introduction pipe 27. Vapor growth is carried out by introducing a phase growth gas. The vapor growth gas that has passed through the substrate P is discharged from the gas discharge pipe 28.
反応室2内で気相成長が終了したら、ゲート弁4を開い
て基板載置部9を基板Pの下方まで前進させ、基板搬送
装置5を上昇させて基板Pを基板載置部9に載せて前室
3内に後退させ、該前室3内で処理済みの基板Pを外部
に取り出し、新たに未処理の基板Pを基板載置部9にセ
ットして再び前記同様に気相成長を実施する。When the vapor phase growth is completed in the reaction chamber 2, the gate valve 4 is opened to advance the substrate placing part 9 to the lower side of the substrate P, and the substrate transfer device 5 is raised to place the substrate P on the substrate placing part 9. Back into the front chamber 3, the processed substrate P is taken out to the outside in the front chamber 3, a new unprocessed substrate P is set on the substrate platform 9, and vapor phase growth is performed again in the same manner as described above. carry out.
なお、基板Pの搬送は基板のみを搬送するものだけでな
く、前記保持台25上に平板状のトレイをセットし、該
トレイに基板を載せて搬送する形式のものもある。It should be noted that the substrate P is not only transported by the substrate alone, but also by a type in which a flat tray is set on the holding table 25 and the substrate is placed on the tray and transported.
しかしながら、前記従来の横型気相成長装置1では、基
板搬送装置5全体の昇降により基板載置部9を昇降し、
これによって保持台25上への基板Pの着脱を行ってい
たため、ガイド筒8と前室3とを接続する可撓管7が第
4図に示す如く大きく変形し大きな荷重を受ける。しか
も基板搬送装置5の昇降の度に大きく変形するので可撓
管7が激しく劣化し、短時間で気密性が損われ危険だっ
た。即ち、気相成長後の基板Pを前室3内に後退させる
ためゲート弁4を開けると、これに伴って反応室2内の
極めて有毒な気相成長ガスが前室3内に流入し、可撓管
7の破損部から漏洩するからである。そこで、可撓管7
は破損する前に交換する必要があるが、前記の如く従来
装置では、可撓管7の劣化が激しいので繁雑な交換を必
要とし保守作業が面倒だった。また、保守作業中は気相
成長が実施できないので生産性にも悪影響を与えてい
た。However, in the conventional horizontal vapor phase growth apparatus 1, the substrate placing unit 9 is raised and lowered by raising and lowering the entire substrate transfer apparatus 5,
Since the substrate P is attached to and detached from the holding table 25 by this, the flexible tube 7 connecting the guide tube 8 and the front chamber 3 is largely deformed as shown in FIG. 4 and receives a large load. Moreover, the flexible tube 7 is severely deteriorated each time the substrate transfer device 5 is moved up and down, and the airtightness is impaired in a short time, which is dangerous. That is, when the gate valve 4 is opened to retract the substrate P after vapor phase growth into the front chamber 3, the extremely toxic vapor phase growth gas in the reaction chamber 2 flows into the front chamber 3 accordingly. This is because the flexible tube 7 leaks from the damaged portion. Therefore, the flexible tube 7
Must be replaced before it is damaged, but in the conventional device as described above, since the flexible tube 7 is severely deteriorated, complicated replacement is required and maintenance work is troublesome. In addition, since vapor phase growth cannot be performed during maintenance work, productivity was adversely affected.
そこで本考案は前記可撓管7への荷重を軽減して寿命を
延ばすことのできる横型気相成長装置を提供することを
目的とする。Therefore, an object of the present invention is to provide a horizontal vapor deposition apparatus capable of extending the life by reducing the load on the flexible tube 7.
前記目的を達成するため、本考案は基板載置部の昇降を
基板搬送装置の傾動により行うようにしたもので、その
特徴とするところは、反応室と前室との間の基板の搬送
を、該前室に連結したガイド筒の内部を先端部に基板載
置部を有して水平方向に移動するガイド棒で行う基板搬
送装置を有する横型気相成長装置において、前記基板搬
送装置のガイド筒と前記前室とを可撓管で接続し、該可
撓管の近傍で該基板搬送装置の前端側を前記前室または
床面に立設した連結材に回動可能に連結すると共に、該
基板搬送装置の後端側を昇降可能に支持し、前記前室ま
たは床面に立設した連結材との連結部を支点として基板
搬送装置を垂直方向に傾動できるよう構成したことにあ
る。In order to achieve the above-mentioned object, the present invention is configured to raise and lower the substrate mounting part by tilting the substrate transfer device, which is characterized in that the substrate is transferred between the reaction chamber and the front chamber. In a horizontal vapor phase growth apparatus having a substrate transfer device that has a substrate mounting portion at the tip of the inside of a guide cylinder connected to the antechamber and a horizontally moving guide rod, a guide for the substrate transfer device is provided. The tube and the front chamber are connected by a flexible tube, and the front end side of the substrate transfer device is rotatably connected to a connecting member standing on the front chamber or the floor near the flexible tube, The rear end side of the substrate transfer device is supported so as to be able to move up and down, and the substrate transfer device can be tilted in the vertical direction with the connecting portion with the connecting member standing on the front chamber or the floor as a fulcrum.
以下、本考案に係る横型気相成長装置の一実施例を第1
図及び第2図に基づいて説明する。The first embodiment of the horizontal vapor phase growth apparatus according to the present invention will be described below.
A description will be given with reference to FIGS.
第1図は本実施例装置の断面側面図であって、可撓管7
の近傍、昇降装置40および水平駆動機構13の一部を
側面図で示している。また第2図は前室3と基板搬送装
置5との連結部近傍の断面平面図である。なお、図中前
記第3図と同一構成部分には同一記号を付して詳細な説
明を省略する。FIG. 1 is a cross-sectional side view of the device of this embodiment, showing a flexible tube 7
3 is a side view showing a part of the elevating device 40 and the horizontal drive mechanism 13 in the vicinity of. Further, FIG. 2 is a cross-sectional plan view in the vicinity of the connecting portion between the front chamber 3 and the substrate transfer device 5. In the figure, the same components as those in FIG. 3 are designated by the same reference numerals and detailed description thereof will be omitted.
本実施例装置は、前室3および基板搬送装置5の前室側
端板14aから各々直径の異なる短管からなる連結材3
0,31を、可撓管7を囲繞して、かつ交差部を形成し
て突設すると共に、該交差部に水平方向の2カ所から支
持ピン32,32を挿通して両連結材30,31を垂直
方向に回動可能に連結すると共に、該基板搬送装置5の
後端側端板14bを昇降装置40により昇降可能に支持
したものである。この昇降装置40は前記従来装置の昇
降装置と同様なもので昇降部41とこれを昇降する昇降
駆動部42とからなり、該昇降部41は前記後端側板1
4bの下端に当接または連設されている。In the apparatus of this embodiment, the connecting member 3 formed of short pipes having different diameters from the front chamber 3 and the front chamber side end plate 14a of the substrate transfer device 5 is used.
0 and 31 are provided so as to surround the flexible tube 7 and form an intersecting portion so as to project, and support pins 32 and 32 are inserted into the intersecting portion from two positions in the horizontal direction so that both connecting members 30, 31 is connected so as to be rotatable in the vertical direction, and the rear end side end plate 14b of the substrate transfer device 5 is supported by a lifting device 40 so as to be lifted and lowered. The elevating device 40 is similar to the elevating device of the conventional device, and includes an elevating part 41 and an elevating drive part 42 for elevating the elevating part 41. The elevating part 41 has the rear end side plate 1
It abuts on or is connected to the lower end of 4b.
前記の如く構成された本実施例装置は、昇降装置40を
作動して基板搬送装置5の後端側を下降させると、該基
板搬送装置5が前記連結部の支持ピン32,32を支点
として時計周り方向に傾動し、これに伴ってガイド棒1
1も時計方向に傾動して基板載置部9が上昇する。ま
た、基板搬送装置5の後端側を上昇させると前記とは逆
に基板載置部9が降下する。この様に、本実施例装置
は、基板載置部9の昇降を基板搬送装置5の傾動によっ
て行うものであり、基板への気相成長は従来装置と同様
にして実施することができる。In the apparatus of the present embodiment configured as described above, when the elevating device 40 is operated to lower the rear end side of the substrate transfer device 5, the substrate transfer device 5 uses the support pins 32, 32 of the connecting portion as a fulcrum. It tilts clockwise and the guide rod 1
1 also tilts clockwise, and the substrate platform 9 rises. Further, when the rear end side of the substrate transfer device 5 is raised, the substrate placing portion 9 is lowered, contrary to the above. In this way, the apparatus of this embodiment raises and lowers the substrate mounting portion 9 by tilting the substrate transfer apparatus 5, and vapor phase growth on the substrate can be carried out in the same manner as the conventional apparatus.
以上の如く、本実施例装置は、基板搬送装置5の傾動に
よって基板載置部9を昇降し、保持台25への基板9の
着脱を行うよう構成したので可撓管7に生ずる垂直方向
の変位量を大幅に低減することができる。例えば、基板
載置部9を20mm昇降させる場合、従来装置では可撓管
7も20mm昇降するが、本実施例装置では、例えば指示
ピン32と可撓管7のガイド筒8側の端部との距離を3
0mm、支持ピン32と基板載置部9との距離を700mm
とすれば可撓管7のガイド筒8側の端部における変位量
は1mm以下の僅かな量となる。従って、可撓管7が受け
る荷重は激減し、その寿命を大幅に延ばすことができ
る。As described above, the apparatus according to the present embodiment is configured such that the substrate placing unit 9 is moved up and down by the tilting of the substrate transfer apparatus 5 to attach and detach the substrate 9 to and from the holding table 25. The amount of displacement can be significantly reduced. For example, when the substrate mounting portion 9 is moved up and down by 20 mm, the flexible tube 7 is also moved up and down by 20 mm in the conventional apparatus, but in the apparatus of the present embodiment, for example, the indicator pin 32 and the end portion of the flexible tube 7 on the guide tube 8 side are provided. The distance of 3
0 mm, the distance between the support pin 32 and the substrate rest 9 is 700 mm
Then, the displacement amount at the end portion of the flexible tube 7 on the guide cylinder 8 side is a slight amount of 1 mm or less. Therefore, the load that the flexible tube 7 receives is drastically reduced, and its life can be greatly extended.
なお、前記基板搬送装置5の傾動に伴って搬送用モータ
17にも若干の昇降力が生ずるが前記の如く変位量は僅
かなのでベルト16で吸収することができ、該搬送用モ
ータ17を固定して設置しても殆ど問題はない。また
は、搬送用モータ17を適宜な支持手段で基板搬送装置
5に吊り下げることもできる。A slight up-and-down force is also generated in the transfer motor 17 as the substrate transfer device 5 tilts, but since the displacement amount is small as described above, it can be absorbed by the belt 16, and the transfer motor 17 is fixed. There is almost no problem even if installed. Alternatively, the transfer motor 17 can be suspended from the substrate transfer device 5 by an appropriate supporting means.
なお、本実施例では前室3と基板搬送装置5とから各々
短管を突設して連結材30,31とし、両連結材30,
31の交差部に水平方向から支持ピン32,32を挿通
して回動可能な連結部を形成したが、連結材として板状
物を用いることもできる。例えば、前室3および基板搬
送装置5の各々から可撓管7の両側に板状物を突設して
交差させ、交差した部分に支持ピンを挿通しても良い。
また、この際十分な強度があれば1本の支持ピンで連結
部を形成しても良い。更に、基板搬送装置5は、床面に
立設した連結材に基板搬送装置5側から突設した連結材
を交差させ、交差した部分に支持ピンを水平方向から挿
通して回動可能な連結部とすることもできる。この場
合、連結部はいずれも可撓管7の近傍に形成する。ま
た、前記種々の連結部はいずれも支持ピンの挿通(支持
ピンがフリーな状態での取付)により形成したが、支持
ピンは両連結材のいずれか一方のみには固定しても良
く、更には連結材自体に支持ピンを形成しても良い。In this embodiment, short pipes are projected from the front chamber 3 and the substrate transfer device 5 to form the connecting members 30 and 31, respectively.
Although the support pin 32, 32 is inserted in the horizontal direction at the intersection of 31 to form the rotatable connecting portion, a plate-like material may be used as the connecting material. For example, plate-like objects may be provided so as to project from both the front chamber 3 and the substrate transfer device 5 on both sides of the flexible tube 7, and they may intersect with each other, and the support pins may be inserted into the intersecting portions.
Further, at this time, if there is sufficient strength, the connecting portion may be formed by one supporting pin. Further, in the board transfer device 5, the connection material that is erected on the floor is crossed with the connection material that projects from the board transfer device 5 side, and the support pin is inserted in the intersecting portion from the horizontal direction so that the connection material is rotatable. It can also be a department. In this case, all the connecting portions are formed near the flexible tube 7. Further, although the various connecting portions are formed by inserting the support pins (attachment in a state where the support pins are free), the support pins may be fixed to only one of the two connecting members. May form a support pin on the connecting member itself.
また、基板搬送装置5の水平駆動機構13は前記実施例
に限るものではなく、例えば外部磁石12を基板搬送装
置5の後端側から前室3側に前進、または後退させるよ
う構成しても良く、また、内部磁石10や外部磁石12
を用いず、ガイド筒8の後端部を気密に、かつ摺動可能
に貫通した棒状体の端部をガイド棒11に連設し、該棒
状体を前進、後退させる構成としても良い。Further, the horizontal drive mechanism 13 of the substrate transfer device 5 is not limited to the above embodiment, and for example, the external magnet 12 may be configured to be moved forward or backward from the rear end side of the substrate transfer device 5 to the front chamber 3 side. Good, the inner magnet 10 and the outer magnet 12
Instead of using, the end of the rod-shaped body that penetrates the rear end of the guide cylinder 8 in an airtight and slidable manner may be connected to the guide rod 11, and the rod-shaped body may be moved forward and backward.
以上説明したように、本考案の横型気相成長装置は、基
板搬送装置を可撓管の近傍で前室または床面に立設した
連結材に回動可能に連結し、該基板搬送装置を垂直方向
に傾動して基板載置部を昇降し保持台への基板の着脱が
行えるように構成したから、保持台への基板の着脱に伴
う可撓管の変位量を少なくし、該可撓管が受ける荷重を
減少し寿命を延ばすことができる。従って、可撓管の交
換等による装置の停止回数も少なくなるので保守作業が
軽減でき、かつ生産性を向上させることができる。As described above, in the horizontal vapor phase growth apparatus of the present invention, the substrate transfer device is rotatably connected to the connecting member standing in the front chamber or floor near the flexible tube, and the substrate transfer device is connected to the substrate transfer device. Since the substrate mounting part is vertically tilted to lift and lower the substrate mounting part to and from the holding table, it is possible to reduce the amount of displacement of the flexible tube associated with the mounting and removal of the substrate to and from the holding table. The load that the pipe receives can be reduced and the life can be extended. Therefore, the number of times the apparatus is stopped due to the replacement of the flexible tube is reduced, so that the maintenance work can be reduced and the productivity can be improved.
更に、従来より可撓管の変位量が小さいので可撓管を従
来より短くすることもでき、これにより気相成長装置全
体をコンパクトにできると共に、前室内での基板の交換
をより短時間で行うことができる。即ち、前記の如く気
相成長後の基板を前室内に戻すと前室内にも反応室から
気相成長ガスが流入するので基板の交換作業をする前に
前室内を真空排気した後乾燥ガスを導入する。この場
合、ガイド棒とガイド筒との間も真空排気されるので可
撓管が短いと真空排気に要する時間も短縮され結局前室
内での基板の交換に要する時間も短縮される。Furthermore, since the amount of displacement of the flexible tube is smaller than in the conventional case, the flexible tube can be made shorter than in the conventional case, which makes it possible to make the entire vapor phase growth apparatus compact and replace the substrate in the front chamber in a shorter time. It can be carried out. That is, when the substrate after vapor phase growth is returned to the front chamber as described above, the vapor phase growth gas also flows from the reaction chamber into the front chamber, so before the substrate replacement work, the front chamber is evacuated to dry gas. Introduce. In this case, since the space between the guide rod and the guide cylinder is also evacuated, if the flexible tube is short, the time required for vacuum evacuation is shortened, and eventually the time required for exchanging the substrate in the front chamber is also shortened.
第1図及び第2図は本考案の一実施例を示すもので、第
1図は横型気相成長装置の断面側面図、第2図は要部の
断面平面図、第3図及び第4図は従来の横型気相成長装
置を示すもので、第3図は断面側面図、第4図は要部の
断面側面図である。 2……反応室、3……前室、5……基板搬送装置、7…
…可撓管、8……ガイド筒、9……基板載置部、11…
…ガイド棒、25……保持台、30,31……連結材、
32……支持ピン、40……昇降装置、P……基板FIGS. 1 and 2 show an embodiment of the present invention. FIG. 1 is a sectional side view of a horizontal vapor phase growth apparatus, FIG. 2 is a sectional plan view of an essential part, and FIGS. FIG. 1 shows a conventional horizontal vapor phase growth apparatus. FIG. 3 is a sectional side view and FIG. 4 is a sectional side view of a main part. 2 ... Reaction chamber, 3 ... Front chamber, 5 ... Substrate transfer device, 7 ...
... Flexible tube, 8 ... Guide tube, 9 ... Substrate mounting part, 11 ...
… Guide rods, 25 …… Holders, 30,31 …… Couplings,
32 ... Support pin, 40 ... Lifting device, P ... Board
Claims (1)
れ替えを行う前室との間の基板の搬送を、該前室に連設
したガイド筒の内部を先端部に基板載置部を有して水平
方向に移動するガイド棒で行う基板搬送装置を有する横
型気相成長装置において、前記基板搬送装置のガイド筒
と前記前室とを可撓管で接続し、該可撓管の近傍で該基
板搬送装置の前端側を前記前室または床面に立設した連
結材に回動可能に連結すると共に、該基板搬送装置の後
端側を昇降可能に支持し、前記前室または床面に立設し
た連結材との連結部を支点として基板搬送装置を垂直方
向に傾動可能としたことを特徴とする横型気相成長装
置。1. A method of transporting a substrate between a reaction chamber in which vapor phase growth is performed on a substrate and a front chamber in which the substrate is exchanged, and the inside of a guide cylinder connected to the front chamber is placed at the front end portion of the substrate. In a horizontal vapor phase growth apparatus having a substrate transfer device having a guide portion that moves horizontally in a horizontal direction, the guide tube of the substrate transfer device and the front chamber are connected by a flexible tube, and the flexible tube The front end side of the substrate transfer device is rotatably connected to the front chamber or a connecting member erected on the floor, and the rear end side of the substrate transfer device is supported so as to be able to move up and down. Alternatively, the horizontal vapor phase growth apparatus is characterized in that the substrate transfer device can be tilted in a vertical direction with a connecting portion with a connecting member standing on the floor as a fulcrum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14030488U JPH0613257Y2 (en) | 1988-10-27 | 1988-10-27 | Horizontal vapor phase growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14030488U JPH0613257Y2 (en) | 1988-10-27 | 1988-10-27 | Horizontal vapor phase growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0261958U JPH0261958U (en) | 1990-05-09 |
JPH0613257Y2 true JPH0613257Y2 (en) | 1994-04-06 |
Family
ID=31404348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14030488U Expired - Lifetime JPH0613257Y2 (en) | 1988-10-27 | 1988-10-27 | Horizontal vapor phase growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0613257Y2 (en) |
-
1988
- 1988-10-27 JP JP14030488U patent/JPH0613257Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0261958U (en) | 1990-05-09 |
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