JPH06103679B2 - Holder for polishing semiconductor wafers - Google Patents
Holder for polishing semiconductor wafersInfo
- Publication number
- JPH06103679B2 JPH06103679B2 JP2079792A JP7979290A JPH06103679B2 JP H06103679 B2 JPH06103679 B2 JP H06103679B2 JP 2079792 A JP2079792 A JP 2079792A JP 7979290 A JP7979290 A JP 7979290A JP H06103679 B2 JPH06103679 B2 JP H06103679B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holder
- polishing
- vacuum
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 50
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 235000012431 wafers Nutrition 0.000 title description 65
- 239000000919 ceramic Substances 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Jigs For Machine Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
【発明の詳細な説明】 利用産業分野 この発明は、半導体ウェーハの研磨用ホルダーの改良に
係り、セラミックス製のホルダー本体に、ウェーハを載
置して真空吸着するため特定樹脂製のウェーハチャック
部を設け、吸着面をラップ盤で直接ラピングして形成し
た共ずり面となし、ウェーハの脱着を容易にしかつ極め
て高平坦度で研磨できる半導体ウェーハの研磨用ホルダ
ーに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor wafer polishing holder, and a wafer chuck portion made of a specific resin for mounting a wafer on a holder body made of ceramic and vacuum-adsorbing the wafer. The present invention relates to a semiconductor wafer polishing holder which has a suction surface formed as a co-rolling surface formed by directly lapping with a lapping machine, facilitates wafer attachment / detachment, and can polish with extremely high flatness.
背景技術 半導体ウェーハは、その製造に際してインゴットから所
要厚みの薄板に切り出されたのち、高平坦度の鏡面を得
るため研磨装置で、ダイヤモンド砥粒による研磨やメカ
ノケミカル研磨が実施されている。BACKGROUND ART A semiconductor wafer is cut out from an ingot into a thin plate having a required thickness at the time of manufacturing the semiconductor wafer, and is then polished with diamond abrasive grains or mechanochemical polishing with a polishing device to obtain a mirror surface with high flatness.
従来の研磨装置では、ステンレス鋼、ガラスあるいはア
ルミ製からなる平坦な円板状の研磨用ホルダーに複数の
ウェーハを接着剤にて固着し、研磨中保持させている。In a conventional polishing apparatus, a plurality of wafers are fixed to a flat disc-shaped polishing holder made of stainless steel, glass or aluminum with an adhesive and held during polishing.
従来の研磨用ホルダーは、平坦なため研磨中、ラップ盤
とホルダーの間隙が小さくなる。従って、ウェーハに作
用する研磨液量が少なくなり、くもりが発生し易くな
る。Since the conventional polishing holder is flat, the gap between the lapping machine and the holder becomes small during polishing. Therefore, the amount of the polishing liquid acting on the wafer is reduced, and clouding is likely to occur.
そこで、ウェーハを載置する部位を突出させたホルダー
が提案（特開昭64−50050号）されている。また、逆に
ウェーハを載置しない中央部分を凹ませ、かつホルダー
表裏面の温度差を考慮してセラミックス製となしたホル
ダーが提案（特開平１−301560号）されている。Therefore, a holder has been proposed (Japanese Patent Laid-Open No. 64-50050) in which a portion for mounting a wafer is projected. On the contrary, a holder has been proposed (Japanese Patent Laid-Open No. 1-301560) in which the central portion where the wafer is not placed is recessed and the temperature difference between the front and back surfaces of the holder is taken into consideration.
しかし、上記のホルダーは、研磨液の供給は良好になる
が、従来と同様に接着剤を熱溶解してウェーハをホルダ
ーに貼り付け、また、ウェーハの研磨後には溶剤による
ホルダーの洗浄が必要で知り、ウェーハ研磨に際した複
雑な工程が必要となる。また、ウェーハ接着部に異物が
入ると傷やエクボと呼ばれる欠陥の発生原因となる。However, in the above holder, although the supply of the polishing liquid is good, the adhesive is heat-melted to attach the wafer to the holder as in the conventional case, and the holder needs to be cleaned with a solvent after polishing the wafer. Knowing this, a complicated process for polishing the wafer is required. Further, if foreign matter enters the bonded portion of the wafer, it may cause scratches or defects called “exvo”.
また、従来の研磨用ホルダーは、ウェーハ面内での平坦
度の制御ができず、平坦な円板状のアルミ製ホルダーの
場合、得られる平坦度が平均８μｍ程度であり、平坦度
の向上が強く望まれていた。In addition, the conventional polishing holder cannot control the flatness in the wafer surface, and in the case of a flat disc-shaped holder made of aluminum, the obtained flatness is about 8 μm on average, which improves the flatness. It was strongly desired.
この発明は、研磨用ホルダーのかかる現状に鑑み、ウェ
ーハの脱着を容易にしかつ極めて高平坦度で研磨できる
半導体ウェーハの研磨用ホルダーの提供を目的としてい
る。In view of the present situation of the polishing holder, an object of the present invention is to provide a polishing holder for a semiconductor wafer, which facilitates the attachment / detachment of the wafer and is capable of polishing with extremely high flatness.
発明の概要 この発明は、 セラミックスからなる研磨用ホルダー本体上面に、ウェ
ーハを載置するウェーハチャック部を設け、 かつウェーハチャック並びにホルダー本体に、ウェーハ
を真空吸着するためのバキューム路を配設した構成から
なり、 さらにウェーハチャック部がアクリルまたはポリカーボ
ネートからなり、 ウェーハを載置する表面形状が、研磨装置に装着後にウ
ェーハを載置することなく研磨盤で直接ラッピングして
形成された共ずり面であることを特徴とする半導体ウェ
ーハの研磨用ホルダーである。SUMMARY OF THE INVENTION According to the present invention, a wafer chuck part for mounting a wafer is provided on an upper surface of a polishing holder main body made of ceramics, and a vacuum path for vacuum-adsorbing a wafer is provided on the wafer chuck and the holder main body. In addition, the wafer chuck is made of acrylic or polycarbonate, and the surface shape on which the wafer is mounted is a co-deviation surface formed by directly lapping with a polishing machine without mounting the wafer after mounting it on the polishing machine. This is a holder for polishing a semiconductor wafer.
発明の図面に基づく開示 第１図はこの発明による半導体ウェーハの研磨用ホルダ
ーの縦断説明図である。Disclosure Based on the Drawings of the Invention FIG. 1 is a longitudinal sectional view of a semiconductor wafer polishing holder according to the present invention.
構成 研磨用ホルダーは第１図に示すように、セラミックスか
らなる円板状のホルダー（１）の上面に、所要数のウェ
ーハチャック（２）を固着し、ホルダー（１）内からウ
ェーハチャック（２）の上面に開口するバキューム路
（３）を配設した構成からなる。As shown in FIG. 1, the polishing holder has a required number of wafer chucks (2) fixed to the upper surface of a disk-shaped holder (1) made of ceramics, and the wafer chucks (2) are attached from inside the holder (1). ) Is provided with a vacuum passage (3) which is open on the upper surface.
ウェーハチャック（２）上面には、図示しないパッドが
敷設され、所要直径のバキューム路（３）の開口部が、
所要パターンで配設されている。A pad (not shown) is laid on the upper surface of the wafer chuck (2), and an opening of the vacuum passage (3) having a required diameter is formed.
It is arranged in the required pattern.
ホルダー（１）の下面中央に設けられたバキューム路
（３）は、図示しない研磨装置への装着に際して、ロー
タリージョイントを介して所要のバキュームポンプに配
管接続してある。The vacuum passage (3) provided in the center of the lower surface of the holder (1) is connected to a required vacuum pump through a rotary joint when it is mounted on a polishing device (not shown).
また、この発明によるホルダー（１）は、ウェーハ
（４）を真空吸着するため、バキューム路（３）が配設
されているため、本体厚みは容易には弾性変形し難いよ
うに十分に考慮した厚みからなる。Further, since the holder (1) according to the present invention vacuum-adsorbs the wafer (4) and is provided with the vacuum passage (3), the thickness of the main body is sufficiently considered so as not to be easily elastically deformed. Consisting of thickness.
作用効果 研磨のためウェーハをホルダーに固定、離脱させる場
合、この発明によるホルダー（１）はウェーハ（４）を
真空吸着するため、バキュームポンプおオン・オフのみ
で容易にでき、ウェーハ（４）の脱着作業を簡略化でき
る。When the wafer is fixed to and removed from the holder for polishing, the holder (1) according to the present invention vacuum-adsorbs the wafer (4), which can be easily performed only by turning the vacuum pump on and off. The desorption work can be simplified.
ウェーハ（４）はホルダー（１）の上面に突設されたウ
ェーハチャック（２）に載置されるため、研磨液のウェ
ーハへの導入が容易となる。Since the wafer (4) is placed on the wafer chuck (2) provided on the upper surface of the holder (1), the polishing liquid can be easily introduced into the wafer.
ホルダー（１）は、アルミナ、ジルコニアなどのセラミ
ックスで形成することにより、従来のアルミ製ホルダー
の如き研磨中、上面側の温度上昇に伴い発生する反りが
防止され、研磨中の平坦度が確保できる。By forming the holder (1) with ceramics such as alumina and zirconia, it is possible to prevent the warpage that occurs due to the temperature rise on the upper surface side during polishing like a conventional aluminum holder, and to secure the flatness during polishing. .
ホルダー（１）の上面に突設するウェーハチャック
（２）は、本体と同様にセラミックスで形成することも
できるが、後記の共ずり面を形成する場合は、アクリル
またはポリカーボネートで形成する必要がある。The wafer chuck (2) protruding from the upper surface of the holder (1) can be made of ceramics like the main body, but when forming a co-sliding surface described later, it is necessary to form it by acrylic or polycarbonate. .
ウェーハチャック（２）のウェーハ載置面は、真空吸着
した後、研磨中にウェーハ（４）の面内に作用する力が
均一になるような形状にする必要があり、前記形状にす
るための一つの方法に、後述する共ずり面を形成する方
法がある。The wafer mounting surface of the wafer chuck (2) is required to have a shape such that the force acting on the surface of the wafer (4) during polishing is uniform after the vacuum suction. As one method, there is a method of forming a co-shear surface described later.
共ずり面を形成する方法は、ウェーハチャック（２）に
直接、研磨盤を接触させて、研磨液を供給しながら研磨
盤とウェーハチャック（２）を相対運動させるもので、
換言するとウェーハチャック（２）のウェーハ載置面を
直接ラッピングすることにより、研磨中にウェーハの面
内に作用する力が均一になるような形状となすことがで
きる。The method for forming the co-shrink surface is to bring the polishing disc into direct contact with the wafer chuck (2) and to relatively move the polishing disc and the wafer chuck (2) while supplying the polishing liquid.
In other words, by directly lapping the wafer mounting surface of the wafer chuck (2), it is possible to make the shape such that the force acting on the wafer surface during polishing becomes uniform.
また、ウェーハ（４）は共ずり面を形成したウェーハチ
ャック（２）に真空吸着保持されているため、研磨中の
研磨盤圧力がより均一に作用して、研磨後の平坦度が良
くなる。Further, since the wafer (4) is vacuum-sucked and held by the wafer chuck (2) having the co-rolled surface, the pressure of the polishing plate during polishing acts more uniformly and the flatness after polishing is improved.
ウェーハチャック（２）をアクリルまたはポリカーボネ
ートで形成する理由は、ステンレス鋼、ガラスあるいは
アルミ、または塩化ビニルなどの合成樹脂などでは、前
期共ずり方法による共ずり面が形成されないか、あるい
は形状を保持できず、さらにはウェーハを傷つける恐れ
があるためであり、アクリルまたはポリカーボネートは
硬度等が最適であり、ウェーハを汚染したり傷つけるこ
とがない。The reason why the wafer chuck (2) is made of acrylic or polycarbonate is that stainless steel, glass or aluminum, or a synthetic resin such as vinyl chloride does not form a co-slip surface by the co-sliding method in the previous term or the shape can be retained. In addition, the hardness of the acrylic or polycarbonate is optimal, and it does not contaminate or damage the wafer.
発明の効果 要するに、この発明によるホルダー（１）は a.ウェーハチャック（２）が突出しているため、ホルダ
ー（１）と研磨盤の間隔が広くなり、研磨液のウェーハ
（４）に対する導入が容易となる。よって、良好な研磨
面が得られる。EFFECTS OF THE INVENTION In summary, in the holder (1) according to the present invention, since the wafer chuck (2) is projected, the distance between the holder (1) and the polishing plate becomes wide, and the polishing liquid can be easily introduced into the wafer (4). Becomes Therefore, a good polished surface can be obtained.
b.ホルダー（１）がセラミックスで形成されているた
め、研磨熱による反りが少なく、良好な研磨面が得られ
る。b. Since the holder (1) is made of ceramics, there is little warpage due to polishing heat and a good polished surface can be obtained.
c.ウェーハチャック（２）が共ずり面で、研磨に最適な
な形状をしており、かつ真空吸着するため、研磨中に、
ウェーハ面内に均一な力が作用して適正な精度が得られ
る。c. The wafer chuck (2) has a coplanar surface with an optimal shape for polishing, and since it is vacuum-adsorbed, during polishing,
A uniform force acts on the wafer surface to obtain proper accuracy.
d.ウェーハチャック（２）はパッド及びバキューム路を
有するチャックによりなっているため、異物がウェーハ
付着部に入っても、傷及びエクボが発生し難い。d. Since the wafer chuck (2) is a chuck having a pad and a vacuum path, even if foreign matter enters the wafer-attached portion, scratches and exfoliation are unlikely to occur.
e.真空吸着により、従来のような接着剤使用による複雑
な作業がなくなる。e. Vacuum suction eliminates the complicated work of using adhesives.
実施例 ホルダー本体がアルミナセラミックからなり直径が320m
mで厚さが15mmと30mmの２種類で、アクリル製のウェー
ハチャックを設けて共ずり面を形成した場合と設けない
場合の種々の構成からなるこの発明によるホルダーを用
意した。Example The holder body is made of alumina ceramic and has a diameter of 320 m.
There were prepared two types of holders having m and thicknesses of 15 mm and 30 mm, and having various configurations with and without an acrylic wafer chuck provided with a co-rolled surface.
比較のための従来のホルダーには、アルミ材質からなり
平坦な320mmφのホルダーを用意した。As a conventional holder for comparison, a flat holder of 320 mmφ made of an aluminum material was prepared.
上記各種のホルダーを用いて、多数の半導体ウェーハを
メカノケミカル研磨した後、各ウェーハの平坦度を測定
した。本発明はバキューム圧を−550mmHgに設定した。A large number of semiconductor wafers were mechanochemically polished using the above various holders, and then the flatness of each wafer was measured. In the present invention, the vacuum pressure is set to -550 mmHg.
従来のアルミ製ホルダーの場合、平均平坦度は８μｍで
あったが、この発明の場合、厚さ30mm、ウェーハチャッ
クに共ずり面を設けない場合でも、第２図ａに示す如
く、平均平坦度は5.3μｍであり、共ずり面を設ける
と、第２図ｂに示す如く平均平坦度は3.4μｍと著しく
向上する。In the case of the conventional aluminum holder, the average flatness was 8 μm. However, in the case of the present invention, the average flatness is as shown in FIG. Is 5.3 μm, and the average flatness is remarkably improved to 3.4 μm when the co-shear surface is provided, as shown in FIG. 2b.
ともにウェーハチャックに共ずり面を設け、厚さが15mm
（第３図ａ）と30mm（第３図ｂ）と異なる場合は、厚さ
が15mmでは平均平坦度は4.9μｍであるのに対して、ホ
ルダーの厚さを30mm程度にするとバキューム圧による弾
性変形量を極めて小さくでき、平均平坦度は3.4μｍに
向上している。Both have a chucking surface on the wafer chuck and a thickness of 15 mm
When the thickness is different from (Fig. 3a) and 30mm (Fig. 3b), the average flatness is 4.9μm when the thickness is 15mm, but when the thickness of the holder is about 30mm, the elasticity due to vacuum pressure is increased. The amount of deformation can be made extremely small, and the average flatness is improved to 3.4 μm.
第１図はこの発明による半導体ウェーハの研磨用ホルダ
ーの縦断説明図である。 第２図a,b、第３図a,bはこの発明による半導体ウェーハ
の研磨用ホルダーを用いた研磨の結果、ウェーハの研磨
平坦度の分布示すグラフである。 １…ホルダー、２…ウェーハチャック、 ３…バキューム路、４…ウェーハ。FIG. 1 is a longitudinal sectional view of a semiconductor wafer polishing holder according to the present invention. 2a and 2b and 3a and 3b are graphs showing the distribution of the polishing flatness of the wafer as a result of polishing using the holder for polishing a semiconductor wafer according to the present invention. 1 ... Holder, 2 ... Wafer chuck, 3 ... Vacuum path, 4 ... Wafer.
Claims (1)
上面に、ウェーハを載置するウェーハチャック部を突設
し、かつウェーハチャック並びにホルダー本体に、ウェ
ーハを真空吸着するためのバキューム路を配設した構成
からなり、さらにウェーハチャック部がアクリルまたは
ポリカーボネートからなり、ウェーハを載置する表面形
状が、研磨装置に装着後にウェーハを載置することなく
研磨盤で直接ラッピングして形成された共ずり面である
ことを特徴とする半導体ウェーハの研磨用ホルダー。1. A structure in which a wafer chuck portion on which a wafer is mounted is projected on an upper surface of a polishing holder main body made of ceramics, and a vacuum path for vacuum suction of the wafer is arranged on the wafer chuck and the holder main body. Further, the wafer chuck is made of acrylic or polycarbonate, and the surface shape on which the wafer is placed is a co-shrink surface formed by directly lapping with a polishing machine without placing the wafer after mounting it on the polishing apparatus. A holder for polishing a semiconductor wafer, which is characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2079792A JPH06103679B2 (en) | 1990-03-27 | 1990-03-27 | Holder for polishing semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2079792A JPH06103679B2 (en) | 1990-03-27 | 1990-03-27 | Holder for polishing semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03278434A JPH03278434A (en) | 1991-12-10 |
| JPH06103679B2 true JPH06103679B2 (en) | 1994-12-14 |
Family
ID=13700067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2079792A Expired - Fee Related JPH06103679B2 (en) | 1990-03-27 | 1990-03-27 | Holder for polishing semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06103679B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443416A (en) * | 1993-09-09 | 1995-08-22 | Cybeq Systems Incorporated | Rotary union for coupling fluids in a wafer polishing apparatus |
| JP5495936B2 (en) * | 2009-06-17 | 2014-05-21 | 株式会社東京精密 | Wafer holding apparatus and wafer processing apparatus |
| CN112171506A (en) * | 2019-07-03 | 2021-01-05 | 上海致领半导体科技发展有限公司 | An annular ceramic carrier suitable for single-side polishing of semiconductor wafers |
| CN110625508A (en) * | 2019-10-11 | 2019-12-31 | 上海致领半导体科技发展有限公司 | A pressure plate of a polishing machine capable of controlling thermal deformation of a ceramic plate |
| CN118951898B (en) * | 2024-10-16 | 2024-12-13 | 天通控股股份有限公司 | A single-sided polishing and fixing method for large-size lithium tantalate wafers |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162455A (en) * | 1986-06-06 | 1987-07-18 | Hitachi Ltd | Wafer grinding method |
| JPS63160341A (en) * | 1986-12-24 | 1988-07-04 | Mitsubishi Electric Corp | System for grinding rear of semiconductor device |
-
1990
- 1990-03-27 JP JP2079792A patent/JPH06103679B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03278434A (en) | 1991-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2588060B2 (en) | Polishing chuck for semiconductor wafer | |
| JPH0426982B2 (en) | ||
| JPH09260314A (en) | Semiconductor wafer manufacturing method | |
| US6402594B1 (en) | Polishing method for wafer and holding plate | |
| JP2004510334A5 (en) | ||
| JP5331777B2 (en) | Semiconductor wafer polishing method | |
| JP3623122B2 (en) | Polishing work holding plate, work polishing apparatus, and work polishing method | |
| JPH06103679B2 (en) | Holder for polishing semiconductor wafers | |
| US6315649B1 (en) | Wafer mounting plate for a polishing apparatus and method of using | |
| JPH02208931A (en) | Polishing process for compound semiconductor substrate | |
| JP2004114184A (en) | Chuck | |
| JPH11333703A (en) | Polishing machine | |
| JP2002217145A (en) | Chuck for polishing apparatus | |
| JPH05315305A (en) | Wafer polishing method | |
| JP4793680B2 (en) | Semiconductor wafer polishing method | |
| JP3821944B2 (en) | Wafer single wafer polishing method and apparatus | |
| JPH09262761A (en) | Polishing method for semiconductor wafer | |
| JPH0767665B2 (en) | Flat polishing machine | |
| JP3907421B2 (en) | Polishing work holding disk, polishing apparatus, and polishing method | |
| JPH09246218A (en) | Polishing method and apparatus | |
| JPH03173129A (en) | Polishing apparatus | |
| JPH11265928A (en) | Wafer pasting plate and semiconductor wafer polishing method using the same | |
| JP4202703B2 (en) | Polishing equipment | |
| JP3940623B2 (en) | Wafer polishing jig, manufacturing method thereof, and wafer polishing apparatus using the same | |
| JPH0992711A (en) | Chuck table and dicer provided with it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |