JPH0593892A - Two-layered type optical modulator - Google Patents
Two-layered type optical modulatorInfo
- Publication number
- JPH0593892A JPH0593892A JP25327991A JP25327991A JPH0593892A JP H0593892 A JPH0593892 A JP H0593892A JP 25327991 A JP25327991 A JP 25327991A JP 25327991 A JP25327991 A JP 25327991A JP H0593892 A JPH0593892 A JP H0593892A
- Authority
- JP
- Japan
- Prior art keywords
- optical modulator
- substrate
- low dielectric
- dielectric constant
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は光変調器に関し、特にニ
オブ酸リチウム基板上に形成される導波型光変調器に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical modulator, and more particularly to a waveguide type optical modulator formed on a lithium niobate substrate.
【0002】[0002]
【従来の技術】ニオブ酸リチウムを基板とする変調器は
半導体変調器に比べ、変調時のチャーピングが小さい、
挿入損失が小さい等の特長がある。変調帯域向上のため
の研究がなされており、従来の技術としては、以下に挙
げる例がある。2. Description of the Related Art A modulator using lithium niobate as a substrate has a smaller chirping during modulation than a semiconductor modulator.
Features such as low insertion loss. Research has been conducted to improve the modulation band, and examples of conventional techniques include the following.
【0003】図3は第16回欧州光通信国際会議(Eu
ropean Conference on Opti
cal Communication,pp999−1
002,1990)より引用した光変調器の断面図であ
る。この光変調器の平面的な構成は図2である。図2の
切断線Iによる断面図を図3に示している。光変調器中
央付近で2本に分岐し再び合流するマハツェンダ型光導
波路22とその近傍に装荷された進行波型電極24から
構成される。FIG. 3 shows the 16th European International Conference on Optical Communication (Eu).
ropeconference on Opti
cal Communication, pp999-1
002, 1990). The planar configuration of this optical modulator is shown in FIG. A sectional view taken along the section line I of FIG. 2 is shown in FIG. It is composed of a Maha-Zehnder type optical waveguide 22 that branches into two near the center of the optical modulator and merges again, and a traveling wave type electrode 24 loaded in the vicinity thereof.
【0004】Zカットのニオブ酸リチウム基板31表面
に作製されたマハツェンダ型チタン拡散光導波路32上
に二酸化珪素(SiO2 )からなるバッファ層33を介
して進行波型電極34を装荷する。電極34にマイクロ
波信号を印加することによりニオブ酸リチウム結晶の電
気光学効果を介して二つの導波光に位相変化を与える。
出力端近傍で合波干渉させて光強度変調として出力す
る。A traveling wave type electrode 34 is loaded on a Maha-Zehnder type titanium diffusion optical waveguide 32 formed on the surface of a Z-cut lithium niobate substrate 31 via a buffer layer 33 made of silicon dioxide (SiO 2 ). By applying a microwave signal to the electrode 34, a phase change is given to the two guided lights via the electro-optic effect of the lithium niobate crystal.
The signals are combined and interfered in the vicinity of the output end and output as light intensity modulation.
【0005】光変調特性は電極を進行するマイクロ波の
電気的透過特性に左右される。電気的透過特性劣化を防
ぐために、ニオブ酸リチウムを基板とする光変調器素子
自体が誘電体共振器として作用することにより生じるマ
イクロ波透過特性上でのディップの発生やマイクロ波の
高次モード励起を抑制する必要がある。図3の例では光
変調器素子の幅、厚さのサイズを縮小し、素子下に空気
間隙を設けて実装することで、共振周波数を目的周波数
帯域の高域側にシフトして共振による影響を回避し、ま
た、マイクロ波高次モードの発生を抑圧している。The light modulation characteristics depend on the electrical transmission characteristics of microwaves traveling through the electrodes. In order to prevent the deterioration of electrical transmission characteristics, the optical modulator element that uses lithium niobate as a substrate acts as a dielectric resonator, causing dips in microwave transmission characteristics and exciting higher-order modes of microwaves. Need to be suppressed. In the example of FIG. 3, the width and thickness of the optical modulator element are reduced, and an air gap is provided below the element to mount the optical modulator element, whereby the resonance frequency is shifted to the high frequency side of the target frequency band and the effect of resonance To avoid the occurrence of higher-order microwave modes.
【0006】[0006]
【発明が解決しようとする課題】上述した従来の光変調
器ではマイクロ波透過特性向上を図るため、光変調器を
構成する基板の厚さを薄くし、また、前記光変調器下に
空気間隙を設けて実装している。そのため、 1)破損しやすく、素子のハンドリングが難しい 2)ファイバ、コネクタ接続などの実装手段に制限を受
けるという問題点がある。In the conventional optical modulator described above, in order to improve the microwave transmission characteristics, the thickness of the substrate forming the optical modulator is reduced, and the air gap is provided under the optical modulator. Is installed. Therefore, there is a problem that 1) it is easily damaged and it is difficult to handle the element. 2) The mounting means such as fiber and connector connection is limited.
【0007】[0007]
【課題を解決するための手段】本発明の光変調器は、光
変調器の基板裏面の少なくとも電極近傍に基板よりも誘
電率の低い低誘電体板をはりつけ、その低誘電体板を接
地した金属筺体に接して装荷したことを特徴としてい
る。According to the optical modulator of the present invention, a low dielectric plate having a lower dielectric constant than that of the substrate is attached to at least an electrode on the back surface of the substrate of the optical modulator, and the low dielectric plate is grounded. The feature is that it was loaded in contact with the metal housing.
【0008】[0008]
【作用】従来は、光変調器の裏面は最も誘電率の低い空
気層であった。In the past, the back surface of the optical modulator was the air layer having the lowest dielectric constant.
【0009】本発明では、光変調器の基板裏面の少なく
とも電極近傍に低誘電率板をはりつけ、それを接地した
金属筺体に直接装荷することによって、マイクロ波の透
過特性向上の効果を損なうことなく、厚さの薄い光変調
器の補強と実装手段の多様化を図ることができる。発明
者らが行った実験では、ニオブ酸リチウムの誘電率35
に比べて低値のガラス板(誘電率:4〜8)において、
空気層と同等のマイクロ波透過特性向上の効果があるこ
とを確認している。According to the present invention, a low dielectric constant plate is adhered to at least the electrodes on the back surface of the substrate of the optical modulator, and the low dielectric constant plate is directly loaded on the grounded metal housing without impairing the effect of improving the microwave transmission characteristics. It is possible to reinforce a thin optical modulator and diversify mounting means. In an experiment conducted by the inventors, a dielectric constant of lithium niobate of 35
In the glass plate of low value (dielectric constant: 4-8) compared to
It has been confirmed that it has the same effect of improving microwave transmission characteristics as an air layer.
【0010】[0010]
【実施例】次に本発明について図面を参照して説明す
る。The present invention will be described below with reference to the drawings.
【0011】図1は本発明の実施例を説明するための2
層型光変調器断面図である。厚さ0.2mm〜0.8m
mのZカットY軸伝搬ニオブ酸リチウム基板11上に導
波路幅6〜12μm、膜厚40〜120nmのチタン薄
膜によるパターンを形成し、950〜1100℃で熱拡
散を行いマハツェンダ型の単一モードチタン拡散光導波
路12を作製する。フォトリソグラフィ法を用いて進行
波型電極14を、厚さ0.3〜2μmの二酸化珪素(S
iO2 )薄膜によるバッファ層13上に作製する。この
光変調器の平面的な構成は図2と同じである。図2の切
断線Iによる断面図が図1を示している。FIG. 1 is a diagram for explaining an embodiment of the present invention.
It is a cross-sectional view of a layered optical modulator. Thickness 0.2mm-0.8m
A Z-cut Y-axis propagating lithium niobate substrate 11 having a width of 6 to 12 μm and a pattern of a titanium thin film having a thickness of 40 to 120 nm is formed on a substrate 11, and heat diffusion is performed at 950 to 1100 ° C. to perform a Maha-Zehnder single mode. The titanium diffusion optical waveguide 12 is produced. The traveling-wave electrode 14 is formed by photolithography using a silicon dioxide (S) layer having a thickness of 0.3 to 2 μm.
It is formed on the buffer layer 13 of an iO 2 ) thin film. The planar configuration of this optical modulator is the same as in FIG. A sectional view taken along the section line I of FIG. 2 shows FIG.
【0012】光変調器裏面に、ニオブ酸リチウム(誘電
率:35)より誘電率の低いガラス板(誘電率:4〜
8)のような低誘電体板15をはりつけ補強を図る。こ
の光変調器を接地した金属筺体16に接して装荷する。On the back surface of the optical modulator, a glass plate having a dielectric constant lower than that of lithium niobate (dielectric constant: 35) (dielectric constant: 4 to
8) The low dielectric plate 15 as shown in FIG. The optical modulator is loaded in contact with the grounded metal housing 16.
【0013】この構成は、光変調器裏面を空気層にした
実装方法と同等のマイクロ波透過特性向上の効果があ
る。This structure has the same effect of improving the microwave transmission characteristics as the mounting method in which the back surface of the optical modulator is an air layer.
【0014】[0014]
【発明の効果】以上説明したように、本発明では光変調
器の基板裏面の少なくとも電極近傍に低誘電率板をはり
つけ、接地した金属筺体に接して装荷することによっ
て、 (1)はりつけた低誘電体板によって薄くしたニオブ酸
リチウム基板光変調器の強度を補強でき、ハンドリング
が容易になる。 (2)はりつけた低誘電体板によって光変調器素子自体
の厚さを厚くできるので、光ファイバ、コネクタ装着な
どの素子実装での設計自由度が大きくなり製作が容易に
なる。 (3)上記構造により、光変調器の高次モードが抑圧で
き、帯域の広域化を図ることができる。 などの効果があり、このような光変調器を供給できる効
果は極めて大きなものであるといえる。As described above, according to the present invention, the low dielectric constant plate is attached to at least the electrodes on the back surface of the substrate of the optical modulator, and the low dielectric constant plate is loaded in contact with the grounded metal housing. The strength of the lithium niobate substrate optical modulator thinned by the dielectric plate can be reinforced, and the handling becomes easy. (2) Since the thickness of the optical modulator element itself can be increased by the attached low dielectric plate, the degree of freedom in designing the element mounting such as optical fiber and connector mounting becomes large, and the manufacturing becomes easy. (3) With the above structure, higher-order modes of the optical modulator can be suppressed, and the band can be widened. It can be said that the effect of supplying such an optical modulator is extremely large.
【図1】本発明の2層型光変調器の一実施例を説明する
ための断面図である。FIG. 1 is a sectional view for explaining an embodiment of a two-layer type optical modulator of the present invention.
【図2】光変調器の構成を詳しく説明するための平面図
であり、切断線Iによる断面図が図1又は図3である。FIG. 2 is a plan view for explaining the configuration of the optical modulator in detail, and a cross-sectional view taken along a cutting line I is FIG. 1 or FIG.
【図3】従来の技術を説明するための図。FIG. 3 is a diagram for explaining a conventional technique.
11,21,31 ニオブ酸リチウム基板 12,22,32 チタン拡散光導波路 13,33 バッファ層 14,24,34 進行波型電極 15 低誘電体板 16 接地した金属筺体 11, 21, 31 Lithium niobate substrate 12, 22, 32 Titanium diffused optical waveguide 13, 33 Buffer layer 14, 24, 34 Traveling wave type electrode 15 Low dielectric plate 16 Grounded metal housing
Claims (1)
傍に装荷された進行波型電極によって構成される光変調
器において、前記基板の裏面の少なくとも電極近傍に基
板よりも誘電率の低い低誘電体板をはりつけ、その低誘
電体板を接地した金属筺体に接して装荷したことを特徴
とする2層型光変調器。1. An optical modulator comprising an optical waveguide formed on a substrate and a traveling wave type electrode loaded in the vicinity of the optical waveguide, wherein a low dielectric constant lower than that of the substrate is provided at least on the back surface of the substrate near the electrode. A two-layer type optical modulator characterized in that a dielectric plate is attached, and the low dielectric plate is loaded in contact with a grounded metal housing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25327991A JPH0593892A (en) | 1991-10-01 | 1991-10-01 | Two-layered type optical modulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25327991A JPH0593892A (en) | 1991-10-01 | 1991-10-01 | Two-layered type optical modulator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0593892A true JPH0593892A (en) | 1993-04-16 |
Family
ID=17249076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25327991A Pending JPH0593892A (en) | 1991-10-01 | 1991-10-01 | Two-layered type optical modulator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0593892A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5991491A (en) * | 1996-11-08 | 1999-11-23 | Nec Corporation | Optical waveguide type device for reducing microwave attenuation |
EP1388750A2 (en) * | 2002-08-08 | 2004-02-11 | Ngk Insulators, Ltd. | Optical waveguide devices and travelling wave type optical modulators |
JP2006284963A (en) * | 2005-03-31 | 2006-10-19 | Sumitomo Osaka Cement Co Ltd | Optical modulator |
WO2008120707A1 (en) * | 2007-03-30 | 2008-10-09 | Sumitomo Osaka Cement Co., Ltd. | Light control element |
WO2008120719A1 (en) * | 2007-03-30 | 2008-10-09 | Sumitomo Osaka Cement Co., Ltd. | Light control element |
JP2009145695A (en) * | 2007-12-14 | 2009-07-02 | Anritsu Corp | Optical modulator |
JP2010211241A (en) * | 2010-06-28 | 2010-09-24 | Sumitomo Osaka Cement Co Ltd | Optical modulator |
US8135241B2 (en) | 2008-06-26 | 2012-03-13 | Fujitsu Limited | Optical modulation device utilizing electro-optic effect |
Citations (6)
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---|---|---|---|---|
JPS5217845A (en) * | 1975-04-22 | 1977-02-10 | Hagiwara Denki Kk | Photomodulator |
JPS5852617A (en) * | 1981-09-25 | 1983-03-28 | Nippon Telegr & Teleph Corp <Ntt> | Electrode for optical element |
JPS62173428A (en) * | 1986-01-28 | 1987-07-30 | Fujitsu Ltd | waveguide optical device |
JPS6418121A (en) * | 1987-07-13 | 1989-01-20 | Nippon Telegraph & Telephone | Production of high-speed optical circuit parts |
JPS6448021A (en) * | 1987-08-19 | 1989-02-22 | Nippon Telegraph & Telephone | Optical device |
JPH03503809A (en) * | 1988-01-19 | 1991-08-22 | ビーテイー・アンド・デイー・テクノロジーズ・リミテッド | Waveguide structure using potassium titanyl phosphate |
-
1991
- 1991-10-01 JP JP25327991A patent/JPH0593892A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217845A (en) * | 1975-04-22 | 1977-02-10 | Hagiwara Denki Kk | Photomodulator |
JPS5852617A (en) * | 1981-09-25 | 1983-03-28 | Nippon Telegr & Teleph Corp <Ntt> | Electrode for optical element |
JPS62173428A (en) * | 1986-01-28 | 1987-07-30 | Fujitsu Ltd | waveguide optical device |
JPS6418121A (en) * | 1987-07-13 | 1989-01-20 | Nippon Telegraph & Telephone | Production of high-speed optical circuit parts |
JPS6448021A (en) * | 1987-08-19 | 1989-02-22 | Nippon Telegraph & Telephone | Optical device |
JPH03503809A (en) * | 1988-01-19 | 1991-08-22 | ビーテイー・アンド・デイー・テクノロジーズ・リミテッド | Waveguide structure using potassium titanyl phosphate |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5991491A (en) * | 1996-11-08 | 1999-11-23 | Nec Corporation | Optical waveguide type device for reducing microwave attenuation |
EP1388750A2 (en) * | 2002-08-08 | 2004-02-11 | Ngk Insulators, Ltd. | Optical waveguide devices and travelling wave type optical modulators |
EP1388750A3 (en) * | 2002-08-08 | 2004-09-22 | Ngk Insulators, Ltd. | Optical waveguide devices and travelling wave type optical modulators |
US6950580B2 (en) | 2002-08-08 | 2005-09-27 | Ngk Insulators, Ltd. | Optical waveguide devices and travelling wave type optical modulators |
JP2006284963A (en) * | 2005-03-31 | 2006-10-19 | Sumitomo Osaka Cement Co Ltd | Optical modulator |
JP4667932B2 (en) * | 2005-03-31 | 2011-04-13 | 住友大阪セメント株式会社 | Light modulator |
JP4589354B2 (en) * | 2007-03-30 | 2010-12-01 | 住友大阪セメント株式会社 | Light modulation element |
JP2008250258A (en) * | 2007-03-30 | 2008-10-16 | Sumitomo Osaka Cement Co Ltd | Optical control device |
EP2141532A1 (en) * | 2007-03-30 | 2010-01-06 | Sumitomo Osaka Cement Co., Ltd. | Light control element |
WO2008120719A1 (en) * | 2007-03-30 | 2008-10-09 | Sumitomo Osaka Cement Co., Ltd. | Light control element |
US7912326B2 (en) | 2007-03-30 | 2011-03-22 | Sumitomo Osaka Cement Co., Ltd. | Optical control device |
US7925123B2 (en) | 2007-03-30 | 2011-04-12 | Sumitomo Osaka Cement Co., Ltd. | Optical control device |
WO2008120707A1 (en) * | 2007-03-30 | 2008-10-09 | Sumitomo Osaka Cement Co., Ltd. | Light control element |
EP2141532A4 (en) * | 2007-03-30 | 2013-03-06 | Sumitomo Osaka Cement Co Ltd | Light control element |
JP2009145695A (en) * | 2007-12-14 | 2009-07-02 | Anritsu Corp | Optical modulator |
JP4510070B2 (en) * | 2007-12-14 | 2010-07-21 | アンリツ株式会社 | Light modulator |
US8135241B2 (en) | 2008-06-26 | 2012-03-13 | Fujitsu Limited | Optical modulation device utilizing electro-optic effect |
JP2010211241A (en) * | 2010-06-28 | 2010-09-24 | Sumitomo Osaka Cement Co Ltd | Optical modulator |
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