JPH0590611A - Dimension modulation electronic element - Google Patents

Abstract

PURPOSE:To provide a device making an electron confinement structure by quantum effect, etc., variable in zero-, one- and two-dimensional ranges and having a wide application. CONSTITUTION:In the structure of the title device, a two-dimensional electron gas layer 2 composed of n-GaAs layer is held between a plurality of mutually parallel p-type GaAs lines 5 and a plurality of mutually parallel p-type GaAs lines 6 formed at angles grade crossing to the GaAs lines 5. These p-type GaAs lines 5, 6 control the potential of the two-dimensional electron gas layer 2, and a one-dimensional electron containment state is brought about when only one side of these lines is placed in the control state; a zero-dimensional confinement state when both of them are placed in the control state; and a two- dimensional containment state when neither of lines functions. This device can be also applied as a switching device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dimensionally modulated electronic device in which the dimension of an electron channel is modulated by controlling potential.

[0002]

2. Description of the Related Art Advances in microfabrication technology have made it possible to process semiconductors and metals with a size of about a quantum mechanical wavelength. By confining electrons in such a minute region, quantum Since the discreteness of levels appears, the possibility of various functional devices utilizing the quantum effect is being pursued.

Quantum wire structures and quantum boxes (quantum dots) are known as functional devices utilizing such quantum effects. A quantum wire is a device structure that confines an electron in a fine linear region where a quantum effect is generated and utilizes the behavior of the electron, and a quantum box has a structure that sterically confine the electron.

As a device utilizing a two-dimensional electron confinement structure, a HEMT (high electron mobility transistor) using a two-dimensional electron gas layer (2DEG) formed on a heterojunction surface is already widely known. Has been.

[0005]

Conventionally, such 0
A one-dimensional quantum box, a one-dimensional quantum wire, a two-dimensional two-dimensional electron gas layer, and the like are structurally produced, and an element that is structurally completed once is used as it is.

It is known that a grit-shaped gate electrode is formed on a two-dimensional electron gas layer and the bias of the gate electrode is changed to switch between the two-dimensional electron gas state and the zero-dimensional quantum dot state. (For example, "The
7th International Works
op on Future Electron Dev
ices, Superlattice and Qua
ntum Functional Devices, O
ct. 2-4, 1989, Toba, Japan ", paper, pp. 95-100. ).

However, the electron confinement structure is
If it is possible to modulate from one dimension (quantum box) to one dimension (quantum wire) and two dimensions, its application range will be extremely wide.

Therefore, the present invention reduces the electron confinement dimension to 0.
It is an object of the present invention to provide a novel dimensional modulation electronic element that can be controlled by modulating between one dimension, one dimension and two dimensions.

In order to achieve the above-mentioned object, the dimensional modulation electronic device of the present invention comprises a two-dimensional electron gas layer and a plurality of parallel linear lines formed on one surface of the two-dimensional electron gas layer. First to control the potential of the three-dimensional electron gas layer
And a second potential control means for controlling the potential of the two-dimensional electron gas layer in a plurality of parallel lines formed on the other surface of the two-dimensional electron gas layer and different from the first potential control means. And a potential control means of No. 3, the potential of the two-dimensional electron gas layer is dimensionally modulated by the first and second potential control means.

In this dimensional modulation electronic device, the interval between the linear potentials controlled by each potential control means may be as large as the electron wavelength at which the quantum effect appears, or a large size at which the quantum effect is not significant. May be Each potential control means uses, for example, a pn junction, a Schottky junction, or a compound semiconductor heterojunction to confine electrons in parallel thin lines. The potential control by the potential control means is realized by supplying a control voltage or the like. The control directions of the linearly controlled potentials of the first potential control means and the second potential control means are different directions, but even if they are the same direction, they cannot be made 0-dimensional and are 1-dimensional. Two-dimensional dimensional modulation is possible. The two-dimensional electron gas layer may have a superlattice structure.

In the dimensional modulation electronic device, 2
At least two pairs of electrodes can be connected to the dimensional electron gas layer. In this case, one of the first and second potential control means is capable of blocking one pair between the two pairs of electrodes, and the other of the first and second potential control means is arranged between the two pairs of electrodes. The potentials of the two-dimensional electron gas layers are controlled so that the other pair can be blocked.

[0012]

In the dimensional modulation electronic device of the present invention, the first or second
When one of the potential control means controls the potential of the two-dimensional electron gas layer, a plurality of parallel one-dimensional structures (quantum wire structure) can be obtained according to the controlled linear potential. Further, when the potentials of the two-dimensional electron gas layer are simultaneously controlled by both the first and second potential control means of different potential control directions, the potential extension directions of the first potential control means and the second potential control means are increased. Therefore, a potential barrier lattice is formed in the two-dimensional electron gas layer. Therefore, each potential well independently obtains a 0-dimensional structure (quantum box, quantum dot structure) in the two-dimensional electron gas layer. When both the first and second potential control means do not control the potential, the two-dimensional electron gas layer functions as it is and operates as a two-dimensional structure in which electrons are confined in a planar region.

In the dimensional modulation electronic device having a structure in which at least two pairs of electrodes are connected to the two-dimensional electron gas layer, the first and second
The conduction / non-conduction between the electrodes is controlled according to the potential control by the potential control means. When the potential of the two-dimensional electron gas layer is simultaneously controlled by both the first and second potential control means, the two pairs of electrodes are all non-conductive, and conversely, when the potential of the two-dimensional electron gas layer is not controlled at all. , The two pairs of electrodes are all conductive. When the potential is controlled by only one of the first and second potential control means, only one pair of electrodes is electrically connected.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described with reference to the drawings.

[First Embodiment] This embodiment is an example of a dimensional modulation electronic device in which a two-dimensional electron gas layer is formed by using a GaAs layer which is a compound semiconductor layer, and has a laminated structure shown in FIG.

As shown in FIG. 1, the dimensional modulation electronic device 1 of this embodiment has three main layers. First, the intermediate layer is the two-dimensional electron gas layer 2 and is composed of an n-type GaAs layer. In the two-dimensional electron gas layer 2, electrons are confined in a plane unless the potential is controlled by the potential control means described below.

An AlGaAs layer 3 is laminated on the two-dimensional electron gas layer 2. At the interface 7 between the AlGaAs layer 3 and the two-dimensional electron gas layer 2, a plurality of p-type GaAs lines 5 are arranged in parallel with each other at a periodic interval x ₁ with the Y direction as the longitudinal direction in the figure. 7 two-dimensional electron gas layer 2
Formed on the side. The p-type GaAs line 5 is a wiring that functions as a first potential control means, and the potential of the two-dimensional electron gas layer 2 changes by changing the voltage supplied to the p-type GaAs line 5.

AlGaA is also formed under the two-dimensional electron gas layer 2.
The s layer 4 is laminated. At the interface 8 between the AlGaAs layer 3 and the two-dimensional electron gas layer 2, a plurality of p-type GaAs lines 6 whose longitudinal direction is the X direction in the drawing are formed. This p-type GaA
The s-line 6 is a plurality of wirings formed on the two-dimensional electron gas layer 2 side of the interface 8 and arranged in parallel with each other with a periodic interval y ₁ . The p-type GaAs line 6 is the second potential control means, and by changing the voltage supplied to the p-type GaAs line 6, the p-type GaAs line 6 is formed in the same manner as the p-type GaAs line 5. The potential changes.

Here, the p-type GaAs line 5 and the p-type GaAs
The lines 6 intersect each other at right angles on the plane, as shown in FIG. Therefore, in plan view, the p-type GaAs lines 5 and p
Type GaAs wire 6 will form a lattice,
The size of the cells surrounded by each lattice is x ₁ × y ₁ , and the cells are arranged in a matrix. In the present embodiment, the distances x _{1 and} y ₁ are both dimensions for generating the quantum effect, and are about the electron wavelength. Therefore, the cell is about the size of a quantum box.

FIG. 3 is a perspective view showing the dimensional modulation electronic device 1 of this embodiment separately, and excluding the uppermost AlGaAs layer 3. As shown in FIG. 3, the two-dimensional electron gas layer 2 made of an intermediate n-type GaAs layer separates the p-type GaAs line 5 and the p-type GaAs line 6 in the Z direction by the thickness z ₁ .

FIG. 4 is a diagram showing an example of a method of supplying power to the dimensional modulation electronic device 1 of this embodiment. Wiring layers 9 and 10 are provided like a lead frame for a semiconductor chip. The wiring layer 9 is a wiring pattern connected to the p-type GaAs line 5 and connected to an external terminal. Each wiring layer 9 is continuous with the p-type GaAs lines 5 arranged at a fine interval x ₁ at the end of the region of the two-dimensional electron gas layer 2, and the line width of the pattern is widened from there. .. Each wiring layer 9 corresponds to each p-type GaAs line 5 on a one-to-one basis, but a plurality of p-type GaAs lines 5 may be collectively connected to the wiring layer 9. The wiring layer 10 is a wiring pattern connected to the p-type GaAs line 6, and like the wiring layer 9, the end portion of the region of the two-dimensional electron gas layer 2 is formed on the p-type GaAs lines 6 arranged at a fine interval y _1. And connect to the external terminal with a pattern that extends from there. This wiring layer 10 is also made of p-type G
One-to-one correspondence with aAs line 6, but multiple p-type GaAs
It is also possible to adopt a structure in which the lines 6 are collectively connected to the wiring layer 10.

The dimensional modulation electronic device 1 of this embodiment having such a structure operates as follows.

First, the two-dimensional electron gas layer 2 is formed of n-GaA.
The s layer is sandwiched between the AlGaAs layers 3 and 4.
Since the AlGaAs layers 3 and 4 have a wider band gap than the GaAs layers, the two-dimensional electron gas layer 2 is the AlGaAs layers 3 and 4.
It becomes a potential well for.

The p-type GaAs lines 5 and 6 formed at the interfaces 7 and 8 are in contact with the surrounding n-type GaAs layer by a pn junction. A depletion layer occurs at this pn junction. When a voltage is supplied to the p-type GaAs lines 5 and 6, the size of the depletion layer changes, and the p-type GaAs lines 5 and 5 change.
When the voltage supplied to 6 is increased, the depletion layer becomes large.

First, when the voltage supplied to the p-type GaAs line 6 is increased and the voltage supplied to the p-type GaAs line 5 is not increased, the potential of the two-dimensional electron gas layer 2 is changed by the expansion of its depletion layer. The barrier becomes higher in the shape of a ridge along the p-type GaAs lines 6 arranged in the X direction as the longitudinal direction.
That is, the potential barrier becomes higher in the portion directly above the p-type GaAs line 6, and the portion having the higher potential barrier is continuous in the X direction. On the contrary, a relative potential well is formed in the region between the pair of p-type GaAs lines 6 and 6, and this potential well is also continuous in the X direction. Figure 5
Is a diagram schematically showing a potential in a cross section perpendicular to the X direction, and a dotted line Ψ is a potential curve. The probability of existence of electrons is high in the region between the pair of p-type GaAs lines 6 and 6, and is extremely small in the portion directly above the p-type GaAs line 6. After all, by increasing the voltage of the p-type GaAs line 6 in this way, a quantum wire structure (one-dimensional structure) continuous in the X direction and separated in the Y direction at intervals of the period y ₁ is obtained. Will be

Next, when the voltage supplied to the p-type GaAs line 5 is increased and the voltage supplied to the p-type GaAs line 6 is not increased, the potential of the two-dimensional electron gas layer 2 is in the Y direction in the longitudinal direction. It becomes a ridge-like thing. In this case,
Since the p-type GaAs line 5 extends parallel to the Y direction, the potential barriers are continuously increased in the Y direction along each p-type GaAs line 5, and the potential barrier and the potential well are increased in the X direction. It will be repeated with a cycle of distance x ₁ . Therefore, by increasing the voltage of the p-type GaAs line 5, it is continuous in the Y direction and X
In the direction, a quantum wire structure (one-dimensional structure) separated at intervals of the period x ₁ is obtained, which is different by 90 degrees from the case where the p-type GaAs line 6 is set to a high voltage. It has a quantum wire structure.

Subsequently, the p-type GaAs line 5 and the p-type GaAs
When both lines 6 are simultaneously set to a high voltage, p-type GaA
The potential barrier becomes higher along both the s line 5 and the p-type GaAs line 6, and a lattice-like potential barrier appears in the two-dimensional electron gas layer 2. Therefore, the electrons are p-type GaAs
The motion is allowed only in the portion between the line 5 and the lattice of the p-type GaAs line 6, and the quantum box array (0
The dimensional structure is obtained.

Finally, p-type GaAs line 5 and p-type GaAs
When both lines 6 are not simultaneously set to a high voltage, the two-dimensional electron gas layer 2 controls the potential of each p-type GaA layer.
It is a region where electrons can move in a plane because it is not received from the s lines 5 and 6.

As described above, in the dimensional modulation electronic device of this embodiment, the modulation from the 0-dimensional structure to the 2-dimensional structure is p-type G.
It is variable depending on the voltage supplied to the aAs lines 5 and 6. Therefore, it is possible to apply from the quantum box structure to the quantum wire structure as well as the two-dimensional electron gas layer.
One element can be used as an extremely multifunctional element.

In the present embodiment, the p-type GaAs line 5,
Although the potential control means is composed of 6, two sets of parallel Schottky electrode lines or the like may be formed at the interface of the two-dimensional electron gas layer 2. Further, a structure may be adopted in which a plurality of two-dimensional electron gas layers are laminated and each potential control means is formed.

[Second Embodiment] This embodiment is a modification of the first embodiment and is an example of forming a p-type GaAs line having a pattern which does not intersect at right angles on a plane.

FIG. 6 shows the structure. At the interface 17 of the two-dimensional electron gas layer 12 made of the n-type GaAs layer, a space v ₁
Thus, the p-type GaAs line 15 is formed in parallel. The longitudinal direction of each GaAs line 15 is the U direction in the drawing. Further, at the interface 18 of the two-dimensional electron gas layer 12, p-type GaAs lines 16 are formed in parallel with a space y ₁ . The longitudinal direction of these p-type GaAs lines 16 is the X direction in the figure. At the interface 18 of the two-dimensional electron gas layer 12, Al
The GaAs layer 14 is joined, and the interface 17 is also made of Al (not shown).
The GaAs layers are joined. The intervals y _{1 and} v ₁ are both distances about the quantum mechanical electron wavelength.

The structure of this embodiment is different from that of the first embodiment in that the longitudinal direction of the p-type GaAs line 15 is not perpendicular to the longitudinal direction of the p-type GaAs line 16. That is, the U direction in the figure has an angle θ (θ ≠ π / 2) with respect to the X direction in the U-X plane, and as a result, the potential of the lattice formed by the p-type GaAs line 15 and the p-type GaAs line 16 is increased. The array of quantum boxes formed as a result of the control is a parallelogram array.

Two sets of p-type GaAs lines 15 and 16 intersecting at an angle that is not orthogonal to each other on such a plane also
Similar to the first embodiment, 0-dimensional, 1-dimensional and 2-dimensional dimensional modulation is possible and various applications are possible.

[Third Embodiment] In the dimensional modulation electronic device of the present embodiment, the layers sandwiching the two-dimensional electron gas layer are composed of p-type GaAs layers, and the pitch of the potential control means is set to a size at which a quantum effect is generated. It is a bigger one.

FIG. 7 shows the structure of the dimensional modulation electronic device of this embodiment. An n-type GaAs layer 22 is stacked on the p-type GaAs layer 21, and a p-type GaAs layer 23 is stacked on the n-type GaAs layer 22. The n-type GaAs layer 22 functions as a two-dimensional electron gas layer. Then, the n-type GaAs layer 22
And the p-type GaAs layer 21 at the interface 24 from the interface 24 to n.
Parallel p-type GaA protruding toward the GaAs layer 22 side
The s line 25 is formed, and the n-type GaAs layer 22 and the p-type GaA are formed.
On the interface 26 of the s layer 23, a plurality of parallel p-type GaAs lines 27 protruding from the interface 26 to the n-type GaAs layer 22 side are formed.

The p-type GaAs lines 25 and 27 are n
It functions as a potential control means for the type GaAs layer 22. That is, by supplying a high voltage, n-type GaAs
The potential of the layer 22 is changed to one having a plurality of linear potential wells. The p-type GaAs line 25 has the longitudinal direction in the X direction in the figure. The p-type GaAs line 27 is Y in the figure.
The direction is the longitudinal direction. Therefore, when a high voltage is applied to the p-type GaAs line 25, a continuous ridge-shaped potential is formed in the X direction, and when a high voltage is applied to the p-type GaAs line 27, a continuous ridge-shaped potential is formed in the Y direction. To be done. In this embodiment, p-type GaAs
The distance y ₂ between the lines 25 and the distance x ₂ between the p-type GaAs lines 27 are
In particular, the size is not about the quantum-mechanical wavelength of electrons that generate quantum effects, but 0-dimensional, 1-dimensional, and 2-dimensional electron channel structures can be obtained by controlling the potential of the 2-dimensional electron gas layer. become.

In the present embodiment, the same GaA is used as a whole.
Since it is composed of s, it has an advantage that it can be easily manufactured by epitaxially growing a single GaAs and using ion implantation or the like.

[Fourth Embodiment] This embodiment is an example of a switching element type dimensional modulation electronic element that functions as a switching element, and is an example in which two pairs of electrodes are connected to a two-dimensional electron gas layer.

FIG. 8 shows its schematic structure. In the dimensional modulation electronic device of the present embodiment, the pair of p-type GaAs layers 3 are sandwiched by the two-dimensional electron gas layer 31 made of the n-type GaAs layer.
2, 33 are provided. A p-type GaAs line 35 is formed at the interface 34 between the p-type GaAs layer 32 and the two-dimensional electron gas layer 31, and a p-type GaAs line 37 is formed at the interface 36 between the p-type GaAs layer 33 and the two-dimensional electron gas layer 31. It is formed. These p-type GaAs lines 35 and 37 are wiring layers that are parallel to each other and are separated from each other. The p-type GaAs line 35 has the Y direction as the longitudinal direction, and the p-type GaAs line 37 has the X direction as the longitudinal direction. Direction. These p-type GaAs wires 35,
Although 37 are formed so as to be orthogonal to each other on a plane, they are separated from each other within the film thickness of the two-dimensional electron gas layer 31.

A gate electrode (G ₁ ) 38 is connected to the end of the p-type GaAs line 37 as a common electrode for each p-type GaAs line 37, and a gate electrode (G ₁ ) is connected to the end of the p-type GaAs line 35. G ₂ ) 39 is connected to each p-type GaAs line 35 as a common electrode. Therefore, the potential of the two-dimensional electron gas layer 31 is controlled by supplying a voltage to the gate electrodes 38 and 39. For example, when a high voltage is supplied only to the gate electrode 38, the potential barrier expands along the p-type GaAs line 37 into the two-dimensional electron gas layer 31, so that a plurality of one-dimensional thin line structures having the X direction as the longitudinal direction are formed. can get. Further, when a high voltage is supplied only to the gate electrode 39, the potential barrier spreads along the p-type GaAs line 35 into the two-dimensional electron gas layer 31, so that a plurality of one-dimensional thin line structures having the Y direction as the longitudinal direction are formed. Is obtained.
When a high voltage is applied to both gate electrodes 38 and 39, the potential barrier extends in a lattice pattern and the channels of the two-dimensional electron gas layer 31 are divided in a matrix pattern.

Two pairs of electrodes are connected to the two-dimensional electron gas layer 31 whose potential is thus controlled. The pair of electrodes 40 and 41 are arranged straight apart in the X direction, and the other pair of electrodes 42 and 43 are arranged straight apart in the Y direction. Further, the electrodes 40 to 43 are formed so as to be separated from each other and penetrate the p-type GaAs layer 32. For example, if each of the electrodes 40 to 43 is made of an alloy of n-type impurities and metal, the p-type GaAs layer 32
Is electrically isolated from.

FIG. 9 is a schematic plan view of the dimensional modulation electronic device of this embodiment. The electrodes 40 and 43 are S _{1 and} S ₂ , the electrodes 41 and 42 are D _{1 and} D ₂ , and the gate electrode 3
When 8, 39 are G _{1 and} G ₂ , the dimensional modulation electronic device of this embodiment operates as follows according to the voltage of the gate electrodes G _{1 and} G ₂ .

[0044]

[Table 1]

The reason for operating in this way is that the high voltage (H)
This is because an electron channel is not formed in a direction intersecting with the extending direction of the gate electrode, and the gate G ₁ cuts off the conduction in the Y direction at a high voltage,
₂ is for interrupting the conduction in the X direction at high voltage. Two-dimensional electron gas layer 3 when both gates G _{1 and} G ₂ are at low voltage
The value 1 makes all the electrodes electrically conductive.

The dimensional modulation electronic device of this embodiment having such a switching function can perform various switching operations. For example, even in the case where two normal FETs are formed, when a high voltage is applied to two gates, there is a large difference in that all electrodes are electrically connected in this embodiment.

The p-type GaAs lines 35 and 3 of this embodiment are used.
The interval of 7 is not a size that produces a quantum effect, but it is also possible to make the interval as fine as the wavelength of an electron to form a quantum wire structure. Further, in the off state, it is not necessary to discard carriers in the channel region, and the two-dimensional electron gas layer can be left as it is as a channel layer, so that high-speed operation can be expected.

[Fifth Embodiment] This embodiment is a modification of the fourth embodiment and is an example of a switching element type dimensional modulation electronic element having three pairs of electrodes.

FIG. 10 shows a planar structure of the dimensional modulation electronic device 50. Although the detailed illustration is omitted mainly because only the number of electrode pairs is different from the fourth embodiment, a potential control means connected to the gate G ₁ is provided at one of the interfaces sandwiching the two-dimensional electron gas layer. A potential control means is formed and is connected to the gate G ₂ and the gate G ₃ on the other interface. The gate G ₁ blocks a channel in the Y direction of the two-dimensional electron gas layer at a high voltage, so that the gate G ₂ and the gate G
₃ blocks the channel in the X direction of the two-dimensional electron gas layer at high voltage. The gate G ₂ and the gate G ₃ are provided in parallel in the X direction and can block channels in different regions.

In this dimensional modulation electronic device 50, three pairs of electrodes S _{1 to} S ₃ and D _{1 to} D ₃ are arranged separately from each other and formed so as to be individually connected to the two-dimensional electron gas layer. ing. Gates G ₂ and G ₃ are formed between the pair of electrodes S _{1 and} D _{1 so} that they can be blocked, and the gate G ₁ does not block between the electrodes S _{1 and} D ₁ . Between the other pair of electrodes S _2, D _2, the gate G ₁ is blocked can be formed, the gate G _2, G
₃ does not contribute to the interruption of conduction between the electrodes. A gate G ₁ is formed so as to be able to be interrupted between the other pair of electrodes S ₃ and D ₃ , and the gates G ₂ and G ₃ do not contribute to interrupting conduction between the electrodes.

The dimensional modulation electronic device 50 of this embodiment provided with the electrodes S _{1 to} S ₃ and D _{1 to} D ₃ in this way operates as follows.

[0052]

[Table 2]

As shown in Table 2, the dimensional modulation electronic device of this embodiment realizes various switching operations.
In particular, when the potential is not controlled so that the gate G ₁ blocks the conduction between the electrodes, the conduction between the three electrodes or between all the electrodes is also possible. Further, since the two-dimensional electron gas layer is used, high speed switching can be realized.

In addition to the fourth and fifth embodiments, by changing the arrangement of electrodes and the arrangement of gates, it is possible to function as various gate circuits and logic circuits.

[0055]

The dimensional modulation electronic device of the present invention has a two-dimensional electron gas layer sandwiched between the two-dimensional electron gas layers and a pair of different potential control means capable of making the two-dimensional electron gas a fine line structure from its potential. Dimensional modulation between a dimensional wire structure and a two-dimensional electron gas structure is possible, and as a result of the dimensional modulation, it is possible to perform various functions in one device. Further, in particular, in the case of a size that produces a quantum effect, the quantum wire or the two-dimensional electron gas structure can be changed from the quantum box by external control, and the device becomes a multifunctional device.

In the switching element type dimensional modulation electronic element in which two or more pairs of electrodes are connected to the two-dimensional electron gas layer, various switching operations are realized, and
High-speed switching is also performed.

[Brief description of drawings]

FIG. 1 is a perspective view of essential parts of a dimensional modulation electronic device according to a first embodiment of the present invention.

FIG. 2 is a plan view of an essential part of the dimensional modulation electronic device according to the first embodiment of the present invention.

FIG. 3 is a second embodiment of the dimensional modulation electronic device according to the present invention.
It is a perspective view which decomposes | disassembles and shows the circumference | surroundings of a three-dimensional electron gas layer.

FIG. 4 is a plan view for explaining a power feeding method of the dimensional modulation electronic device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view schematically showing the potential control of the dimensional modulation electronic device according to the first embodiment of the present invention.

FIG. 6 is a perspective view of an essential part of a dimensional modulation electronic device according to a second embodiment of the present invention.

FIG. 7 is a perspective view of an essential part of a dimensional modulation electronic device according to a third embodiment of the present invention.

FIG. 8 is a perspective view of a switching element type dimensional modulation electronic device according to a fourth embodiment of the present invention.

FIG. 9 is a plan view showing an electrode arrangement of a dimensional modulation electronic device according to a fourth embodiment of the present invention.

FIG. 10 is a plan view showing an electrode arrangement of a dimensional modulation electronic device according to a fifth embodiment of the present invention.

[Explanation of symbols]

 1, 50 ... Dimensionally modulated electron element 2, 12, 31 ... Two-dimensional electron gas layer 3, 4 ... AlGaAs layer 5, 6, 15, 16, 25, 27 ... P-type GaAs line 7, 8, 171, 18 ... Interface 21, 23, 32, 33 ... P-type GaAs layer 22 ... N-type GaAs layer 38, 39 ... Gate electrodes 40-43 ... Electrodes

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 21/338 29/812

Claims (2)

[Claims] 1. A two-dimensional electron gas layer and a first potential control capable of controlling the potential of the two-dimensional electron gas layer in a plurality of parallel lines formed on one surface of the two-dimensional electron gas layer. Means and a second potential control which is formed on the other surface of the two-dimensional electron gas layer and is capable of controlling the potential of the two-dimensional electron gas layer in a plurality of parallel linear lines different from the first potential control means. Means, and the potential of the two-dimensional electron gas layer is dimensionally modulated by the first and second potential control means. 2. The dimensional modulation electronic device according to claim 1, wherein at least two pairs of electrodes are connected to the two-dimensional electron gas layer, and one of the first and second potential control means is the one. Each of the two-dimensional electrons is configured such that one pair between the two pairs of electrodes can be blocked and the other of the first and second potential control means can block the other pair between the two pairs of electrodes. A dimensional modulation electronic device characterized by controlling the potential of a gas layer.