JPH0562048U - Power element fixing structure - Google Patents
Power element fixing structureInfo
- Publication number
- JPH0562048U JPH0562048U JP218492U JP218492U JPH0562048U JP H0562048 U JPH0562048 U JP H0562048U JP 218492 U JP218492 U JP 218492U JP 218492 U JP218492 U JP 218492U JP H0562048 U JPH0562048 U JP H0562048U
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- solder
- external heat
- power element
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 26
- 230000017525 heat dissipation Effects 0.000 claims abstract description 26
- 238000005476 soldering Methods 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
(57)【要約】
【目的】 熱応力が付加されることの無いパワー素子の
固定構造を提供すること。
【構成】 外部放熱板７の上面７ａに、窒化アルミ製基
板３を載置する連続した枠部11を設け、該枠部11の内側
に深さ14の凹部13を形成する。凹部13に半田15を所定量
供給し、枠部11に窒化アルミ製基板３を載置して、窒化
アルミ製基板３を半田15を介して外部放熱板７の上面７
ａに固定する。
(57) [Abstract] [Purpose] To provide a fixing structure for a power element in which thermal stress is not applied. [Structure] A continuous frame portion 11 on which the aluminum nitride substrate 3 is mounted is provided on the upper surface 7a of the external heat dissipation plate 7, and a recess 13 having a depth 14 is formed inside the frame portion 11. A predetermined amount of solder 15 is supplied to the concave portion 13, the aluminum nitride substrate 3 is placed on the frame portion 11, and the aluminum nitride substrate 3 is placed on the upper surface 7 of the external heat dissipation plate 7 via the solder 15.
Fix to a.
Description
【０００１】[0001]
本考案は、パワー素子の固定構造に関する。 The present invention relates to a power device fixing structure.
【０００２】[0002]
従来のパワー素子の固定構造では、該パワー素子の発熱に伴う熱膨張による素 子破損を防止する必要がある。この為に、図２に示すように、先ずパワー素子41 を例えばモリブデンＭｏ，タングステンＷ等の、素子と同等の線膨張係数の有す る材料からなる放熱板43に半田51を介して固定し、さらに前記放熱板43とアルミ ニウムＡｌ等からなる外部放熱板47との間にアルミナＡｌ2 Ｏ3 からなる絶縁基 板45を各々半田53，55を介して介装することにより、多層構造として、絶縁及び 熱応力緩和を図っていた。In the conventional power element fixing structure, it is necessary to prevent element damage due to thermal expansion due to heat generation of the power element. For this purpose, as shown in FIG. 2, first, the power element 41 is fixed to the heat dissipation plate 43 made of a material having a coefficient of linear expansion equivalent to that of the element, such as molybdenum Mo and tungsten W, with solder 51. Further, an insulating base plate 45 made of alumina Al 2 O 3 is interposed between the heat dissipation plate 43 and an external heat dissipation plate 47 made of aluminum Al or the like via solders 53 and 55, respectively, to form a multilayer structure. , Insulation and thermal stress relaxation.
【０００３】 しかしながら、前記の固定構造にあっては、多層構造を構成する必要があるた め工数が増大し、もって製造コストの増大につながる。 従って、以下に述べるような改善が成されている。即ち、図３に示すように、 パワー素子61を窒化アルミＡｌＮからなる、パワー素子61と同等の線膨張係数を 有すると共に絶縁性も兼ね備えた基板65に、半田63を介して固定することにより パワー素子61，基板65間の絶縁及び熱応力緩和を図ることが可能となる。However, in the above-mentioned fixing structure, it is necessary to form a multilayer structure, so that the number of steps is increased, which leads to an increase in manufacturing cost. Therefore, the following improvements have been made. That is, as shown in FIG. 3, by fixing the power element 61 to the substrate 65 made of aluminum nitride AlN, which has a coefficient of linear expansion equivalent to that of the power element 61 and also has an insulating property, through the solder 63, the power is reduced. Insulation between the element 61 and the substrate 65 and thermal stress relaxation can be achieved.
【０００４】[0004]
しかしながら、当該基板65をアルミニウムＡｌ等からなる外部放熱板47に固定 する際には、基板65の線膨張係数と外部放熱板47の線膨張係数との差異が大きい ため、シリコン接着剤等の緩衝材67を用いた接着により固定していた。 ここで、半田63及び基板65等を同一条件として、前記シリコン接着剤の厚みｔ に係る外部放熱板47の放熱面47ａの温度上昇ΔＴは、図４に示すようになる。即 ち、シリコン接着剤の厚みｔが厚過ぎると該シリコン接着剤の放熱性の悪さに起 因して伝熱性が劣化して放熱効果が低下し、一方薄すぎると基板65と外部放熱板 47との間の線膨張係数の差異を緩衝することが不可能となるという問題がある。 However, when fixing the substrate 65 to the external heat dissipation plate 47 made of aluminum Al or the like, there is a large difference between the linear expansion coefficient of the substrate 65 and the linear expansion coefficient of the external heat dissipation plate 47. It was fixed by adhesion using the material 67. Here, the temperature rise ΔT of the heat dissipation surface 47a of the external heat dissipation plate 47 with respect to the thickness t 1 of the silicon adhesive is as shown in FIG. 4 under the same conditions of the solder 63 and the substrate 65. Immediately, if the thickness t of the silicon adhesive is too thick, the heat transfer performance is deteriorated due to the poor heat radiation of the silicon adhesive, and the heat radiation effect is reduced. There is a problem that it becomes impossible to buffer the difference in the coefficient of linear expansion between and.
【０００５】 本考案は、このような上記の問題点に鑑みなされたもので、コストアップを招 くことなく、またパワー素子に熱応力が付加されることの無いパワー素子の固定 構造を提供することを目的とする。The present invention has been made in view of the above problems, and provides a fixing structure for a power element without increasing cost and without applying thermal stress to the power element. The purpose is to
【０００６】[0006]
このため、本考案は、パワー素子を窒化アルミ製基板に固定し、該窒化アルミ 製基板を外部放熱板に半田付け固定するパワー素子の固定構造において、外部放 熱板の前記窒化アルミ製基板の外縁より内側に相対する面に所定深さの凹部を設 け、該凹部に供給した半田を介して窒化アルミ製基板を外部放熱板に固定する構 成とした。 Therefore, the present invention provides a power element fixing structure in which a power element is fixed to an aluminum nitride substrate and the aluminum nitride substrate is fixed to an external heat dissipation plate by soldering. A recess having a predetermined depth is provided on the surface facing inward from the outer edge, and the aluminum nitride substrate is fixed to the external heat dissipation plate via the solder supplied to the recess.
【０００７】[0007]
以上の構成によれば、窒化アルミ製基板は凹部の深さ以上の厚みを持つ半田を 介して外部放熱板に固定されることとなる。もってパワー素子から窒化アルミ製 基板を介して外部放熱板に伝達される伝熱が、熱良導体である半田を介しての固 定により良好に維持できるので、放熱性を良好に確保できると共に、所定以上の 厚さを有した半田の緩衝機能によりパワー素子に熱応力が付加されることが防止 される。 According to the above configuration, the aluminum nitride substrate is fixed to the external heat dissipation plate via the solder having a thickness not less than the depth of the recess. Therefore, the heat transfer from the power element to the external heat dissipation plate through the aluminum nitride substrate can be maintained well by fixing it through the solder, which is a good thermal conductor, so that good heat dissipation can be ensured and The buffer function of the solder having the above thickness prevents thermal stress from being applied to the power element.
【０００８】[0008]
以下に本考案の一実施例を、図１に基づいて説明する。 即ち、パワー素子１が窒化アルミＡｌＮからなる、パワー素子１と同等の線膨 張係数を有すると共に絶縁性も兼ね備えた基板３に、半田５を介して固定されて いる。また、当該基板３がアルミニウムＡｌ等からなる外部放熱板７に固定され るが、本考案に係る構成として、外部放熱板７の上面７ａに、前記窒化アルミ製 基板３を載置する連続した枠部11を設け、該枠部11の内側に深さ14の凹部13を形 成する。該凹部13に半田15を所定量供給するが、該半田15は凹部13内において深 さ14以上の厚みとなる。さらに、該半田15が溶融した状態において、該枠部11に 前記窒化アルミ製基板３が載置される。即ち、窒化アルミ製基板３は枠部11の上 部に位置する半田17と凹部13に供給された半田15の上に載置される。供給された 半田15が凹部13の深さ14以上の厚みを持つので、窒化アルミ製基板３は半田15と 接触し、該半田15を介して外部放熱板７の上面７ａに固定されることとなる。 An embodiment of the present invention will be described below with reference to FIG. That is, the power element 1 is fixed via the solder 5 to the substrate 3 made of aluminum nitride AlN, which has the same linear expansion coefficient as that of the power element 1 and also has the insulating property. Also, the substrate 3 is fixed to the external heat dissipation plate 7 made of aluminum Al or the like, but as the structure according to the present invention, a continuous frame for mounting the aluminum nitride substrate 3 on the upper surface 7a of the external heat dissipation plate 7. A portion 11 is provided, and a concave portion 13 having a depth 14 is formed inside the frame portion 11. A predetermined amount of solder 15 is supplied to the recess 13, and the solder 15 has a depth of 14 or more in the recess 13. Further, the aluminum nitride substrate 3 is placed on the frame portion 11 in a state where the solder 15 is melted. That is, the aluminum nitride substrate 3 is placed on the solder 17 located on the upper portion of the frame 11 and the solder 15 supplied to the recess 13. Since the supplied solder 15 has a thickness equal to or greater than the depth 14 of the recess 13, the aluminum nitride substrate 3 comes into contact with the solder 15 and is fixed to the upper surface 7a of the external heat dissipation plate 7 via the solder 15. Become.
【０００９】 従って、窒化アルミ製基板３が半田15を介して外部放熱板７に固定されること により、パワー素子１から窒化アルミ製基板３を介して外部放熱板７に伝達され る伝熱が熱良導体である半田15を介しての固定により良好に維持できるので、放 熱性を良好に確保できることとなる。さらに、半田15が凹部13の深さ14以上の厚 さを有しているので、当該半田15の緩衝機能により窒化アルミ製基板３と外部放 熱板７との線膨張係数の差を吸収することができる。Therefore, by fixing the aluminum nitride board 3 to the external heat dissipation plate 7 via the solder 15, the heat transfer from the power element 1 to the external heat dissipation board 7 via the aluminum nitride board 3 is performed. Since it can be satisfactorily maintained by being fixed through the solder 15, which is a good thermal conductor, the heat dissipation can be satisfactorily secured. Further, since the solder 15 has a thickness equal to or greater than the depth 14 of the recess 13, the buffer function of the solder 15 absorbs the difference in linear expansion coefficient between the aluminum nitride substrate 3 and the external heat dissipation plate 7. be able to.
【００１０】 また、パワー素子１と外部放熱板７との間には窒化アルミ製基板３が介装され るだけであるので、多層構造ともならず、コストアップにもならない。 また、本実施例においては、凹部13を枠部11の内側に形成したが、外部放熱板 ７の上面７ａに直接凹部を設けてもよいことは勿論である。Further, since the aluminum nitride substrate 3 is only interposed between the power element 1 and the external heat dissipation plate 7, it does not have a multi-layer structure and does not increase the cost. Further, in the present embodiment, the concave portion 13 is formed inside the frame portion 11, but it goes without saying that the concave portion may be directly provided on the upper surface 7a of the external heat dissipation plate 7.
【００１１】[0011]
以上説明したように、本考案によれば、外部放熱板の前記窒化アルミ製基板の 外縁より内側に相対する面に所定深さの凹部を設け、該凹部に供給した半田を介 して窒化アルミ製基板を外部放熱板に固定する構成としたので、コストアップを 招くことも無く、パワー素子から窒化アルミ製基板を介して外部放熱板に伝達さ れる伝熱が、熱良導体である半田を介しての固定により良好に維持できるので、 放熱性を良好に確保でき、また半田の厚みに係る緩衝機能によりパワー素子に熱 応力が付加されることも防止できるという効果がある。 As described above, according to the present invention, a concave portion having a predetermined depth is provided on the surface of the external heat dissipation plate facing the outer edge of the aluminum nitride substrate, and the aluminum nitride is formed through the solder supplied to the concave portion. Since the board made of metal is fixed to the external heat sink, the cost is not increased, and the heat transfer from the power element to the external heat sink via the aluminum nitride board is conducted via the solder, which is a good conductor of heat. Since it can be favorably maintained by the fixing, the heat dissipation can be favorably ensured, and the thermal stress can be prevented from being applied to the power element due to the buffer function related to the thickness of the solder.
【図１】本考案の一実施例を示す断面図FIG. 1 is a sectional view showing an embodiment of the present invention.
【図２】従来例を示す断面図FIG. 2 is a sectional view showing a conventional example.
【図３】従来例を示す断面図FIG. 3 is a sectional view showing a conventional example.
【図４】外部放熱板の温度上昇特性図[Fig. 4] Temperature rise characteristic diagram of external heat sink
１ パワー素子 ３ 窒化アルミ製基板 ７ 外部放熱板 11 枠部 13 凹部 15 半田 17 半田 1 Power Element 3 Aluminum Nitride Substrate 7 External Heat Sink 11 Frame 13 Recess 15 Solder 17 Solder
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/40 Ｆ 7220−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/40 F 7220-4M
Claims (1)
該窒化アルミ製基板を外部放熱板に半田付け固定するパ
ワー素子の固定構造において、外部放熱板の前記窒化ア
ルミ製基板の外縁より内側に相対する面に所定深さの凹
部を設け、該凹部に供給した半田を介して窒化アルミ製
基板を外部放熱板に固定したことを特徴とするパワー素
子の固定構造。1. A power device fixed to an aluminum nitride substrate,
In a power element fixing structure for fixing the aluminum nitride substrate to an external heat sink by soldering, a concave portion having a predetermined depth is provided on the surface of the external heat radiator plate facing the inside of the outer edge of the aluminum nitride substrate, and the concave portion is provided in the concave portion. A power element fixing structure characterized in that an aluminum nitride substrate is fixed to an external heat dissipation plate via supplied solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP218492U JPH0562048U (en) | 1992-01-24 | 1992-01-24 | Power element fixing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP218492U JPH0562048U (en) | 1992-01-24 | 1992-01-24 | Power element fixing structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0562048U true JPH0562048U (en) | 1993-08-13 |
Family
ID=11522281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP218492U Pending JPH0562048U (en) | 1992-01-24 | 1992-01-24 | Power element fixing structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0562048U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09331150A (en) * | 1996-06-11 | 1997-12-22 | Toshiba Corp | Semiconductor device |
| US8446727B2 (en) | 2008-05-08 | 2013-05-21 | Toyota Jidosha Kabushiki Kaisha | Electronic component |
-
1992
- 1992-01-24 JP JP218492U patent/JPH0562048U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09331150A (en) * | 1996-06-11 | 1997-12-22 | Toshiba Corp | Semiconductor device |
| US8446727B2 (en) | 2008-05-08 | 2013-05-21 | Toyota Jidosha Kabushiki Kaisha | Electronic component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20010071333A (en) | Thermally conductive mounting arrangement for securing an integrated circuit package to a heat sink | |
| JPH10189845A (en) | Heat sink for semiconductor device | |
| JP3733783B2 (en) | Module having heat dissipation structure of heating element | |
| JP2001135758A (en) | Heat-radiating structure for power module | |
| JP4046623B2 (en) | Power semiconductor module and fixing method thereof | |
| JPH0562048U (en) | Power element fixing structure | |
| JP3387221B2 (en) | High thermal conductive ceramic package for semiconductor | |
| US7236367B2 (en) | Power electronics component | |
| JPH053383A (en) | Printed board | |
| JPH09213852A (en) | Heat dissipation structure for heat-generating electronic components | |
| JP2002016196A (en) | Lead frame and resin-sealed semiconductor device using the same | |
| JP2000091481A (en) | Power transistor case and power transistor | |
| JP2748777B2 (en) | Container for semiconductor device | |
| JPH06181371A (en) | Metallic base circuit substrate and manufacturing method thereof | |
| JP2789563B2 (en) | Integrated circuit device | |
| JP3007086U (en) | Insulating substrate | |
| JP2619155B2 (en) | Hybrid integrated circuit device | |
| JPH09252082A (en) | Semiconductor device | |
| US5068156A (en) | Semiconductor package | |
| JPH0558569B2 (en) | ||
| JP2917902B2 (en) | Semiconductor device | |
| JPH08204370A (en) | Mounting structure of heating component and wiring board on radiator | |
| JP2595957B2 (en) | Cooling structure of LSI case | |
| JPH03116859A (en) | Hybrid integrated circuit device | |
| JPS5968998A (en) | Hybrid integrated circuit device |