JPH0555180A - Lift-off device for large-sized substrate and regulating method therefor - Google Patents
Lift-off device for large-sized substrate and regulating method thereforInfo
- Publication number
- JPH0555180A JPH0555180A JP21768491A JP21768491A JPH0555180A JP H0555180 A JPH0555180 A JP H0555180A JP 21768491 A JP21768491 A JP 21768491A JP 21768491 A JP21768491 A JP 21768491A JP H0555180 A JPH0555180 A JP H0555180A
- Authority
- JP
- Japan
- Prior art keywords
- lift
- tank
- sound pressure
- substrate
- stripping solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims description 14
- 230000001105 regulatory effect Effects 0.000 title 1
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 31
- 239000011435 rock Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000005401 electroluminescence Methods 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 液晶ディスプレイやエレクトロルミネッセン
ス等を構成するパネル上に薄膜トランジスタを形成する
際に用いられるリフトオフ装置に関し、均一なリフトオ
フ処理が可能で処理能力の高いリフトオフ装置の提供を
目的とする。
【構成】 底に複数の超音波発生器31が所定の間隔で配
設され剥離液33を貯留するリフトオフ槽32と、剥離液33
に浸漬された被処理基板1を水平に保持する基板保持治
具34と、被処理基板1を縦、横、または深さ方向の少な
くとも1方向に揺動せしめる基板揺動機構35を有し、且
つ、リフトオフ槽32内の複数の領域における超音波の音
圧を計測し信号を出力する音圧検出機構4と、リフトオ
フ槽32内の音圧分布を表示する音圧分布表示機構5を具
えてなるように構成する。
(57) [Summary] [Objective] A lift-off device used for forming a thin film transistor on a panel that constitutes a liquid crystal display, electroluminescence, etc., and an object thereof is to provide a lift-off device capable of uniform lift-off processing and having high processing capability. And [Structure] A lift-off tank 32 in which a plurality of ultrasonic wave generators 31 are arranged at a predetermined interval at a bottom to store a stripping solution 33, and a stripping solution 33
A substrate holding jig 34 for horizontally holding the substrate 1 to be processed dipped in the substrate, and a substrate swinging mechanism 35 for swinging the substrate 1 to be processed in at least one of a vertical direction, a horizontal direction, and a depth direction, In addition, the lift-off tank 32 includes a sound pressure detection mechanism 4 that measures the sound pressure of ultrasonic waves in a plurality of regions and outputs a signal, and a sound pressure distribution display mechanism 5 that displays the sound pressure distribution in the lift-off tank 32. To be configured.
Description
【0001】[0001]
【産業上の利用分野】本発明は液晶ディスプレイやエレ
クトロルミネッセンス等を構成するパネルの製造設備に
係り、特にパネル上に駆動用の薄膜トランジスタを形成
する際に用いられるリフトオフ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing facility for a panel which constitutes a liquid crystal display or electroluminescence, and more particularly to a lift-off device used for forming a driving thin film transistor on the panel.
【0002】薄膜トランジスタ(TFT)駆動型の液晶
ディスプレイやエレクトロルミネッセンスは、マトリク
ス状に配列された数多くの駆動用TFTが大型のガラス
基板上に形成されており、かかるTFTの中に不良品が
混在しているとその部分のドットが欠けて表示品質を低
下させる。In a thin film transistor (TFT) drive type liquid crystal display or electroluminescence, a large number of drive TFTs arranged in a matrix are formed on a large glass substrate, and defective products are mixed in these TFTs. If so, the dots at that portion are missing and display quality is degraded.
【0003】そこでパネル上に駆動用の薄膜トランジス
タを形成する際に用いられるリフトオフ装置において
も、ガラス基板上にレジストを始めとする不要な膜を残
存させることの無い装置の開発が強く要望されている。Therefore, even in a lift-off device used for forming a driving thin film transistor on a panel, there is a strong demand for development of a device which does not leave an unnecessary film such as a resist on a glass substrate. ..
【0004】[0004]
【従来の技術】図5はTFTの製造工程の概要を示す
図、図6は従来のリフトオフ装置の主要部を示す斜視図
である。2. Description of the Related Art FIG. 5 is a diagram showing an outline of a manufacturing process of a TFT, and FIG. 6 is a perspective view showing a main part of a conventional lift-off device.
【0005】TFTの製造は先ず図5(a) の如くガラス
基板1上にTiからなるゲート電極11、および行または列
を構成する複数のゲート電極11が接続されるゲートバス
ライン12を形成し、その上に図5(b) の如くプラズマC
VDによりSiO2とSiN からなるゲート絶縁膜13、a-Siか
らなる動作半導体層14、SiO2からなる保護層15、a-Siか
らなる密着層16を順次連続成膜する。To manufacture a TFT, first, as shown in FIG. 5A, a gate electrode 11 made of Ti and a gate bus line 12 to which a plurality of gate electrodes 11 forming rows or columns are connected are formed on a glass substrate 1. , And plasma C as shown in Fig. 5 (b).
By VD, a gate insulating film 13 made of SiO 2 and SiN, an operating semiconductor layer 14 made of a-Si, a protective layer 15 made of SiO 2 , and an adhesion layer 16 made of a-Si are successively formed.
【0006】a-Siからなる密着層16の全面にレジストを
塗布したあとガラス基板1の裏面より露光し、現像する
ことによって図5(c) に示す如くゲート電極11上の領域
を占めるレジストマスク17を形成する。A resist mask occupies an area on the gate electrode 11 as shown in FIG. 5 (c) by applying a resist on the entire surface of the adhesion layer 16 made of a-Si and then exposing and developing from the back surface of the glass substrate 1. Form 17.
【0007】次いで図5(d) の如くレジストマスク17を
マスクとしてエッチングにより密着層16および保護層15
をパターニングし、動作半導体層14の上にn+ −a-Siか
らなるコンタクト層18と電極形成用のTi膜19を順次成膜
した後、ガラス基板1を剥離液に浸漬してリフトオフを
行い密着層16上のレジストマスク17を除去する。Next, as shown in FIG. 5D, the adhesion layer 16 and the protective layer 15 are etched by etching using the resist mask 17 as a mask.
Is patterned, and a contact layer 18 made of n + -a-Si and a Ti film 19 for forming an electrode are sequentially formed on the operating semiconductor layer 14, and then the glass substrate 1 is immersed in a stripping solution for lift-off. The resist mask 17 on the adhesion layer 16 is removed.
【0008】更に素子領域全体を覆うレジストマスクを
用いてドライエッチングを行ったあと該レジストマスク
を除去することによって、図5(e) の如くTi膜19がパタ
ーニングされてソース電極20とドレイン電極21が形成さ
れ、コンタクト層18および動作半導体層14がパターニン
グされて素子分離されたTFT2が形成される。Further, dry etching is performed using a resist mask covering the entire element region, and then the resist mask is removed. As a result, the Ti film 19 is patterned as shown in FIG. 5 (e) to form the source electrode 20 and the drain electrode 21. Is formed, and the contact layer 18 and the operating semiconductor layer 14 are patterned to form the element-isolated TFT 2.
【0009】上記のTFTの製造においてレジストマス
クを除去する従来のリフトオフ装置3は図6に示す如
く、底面に複数の超音波発生器31が所定の間隔で配設さ
れてなるリフトオフ槽32を具えており、リフトオフ槽32
に貯留された所定量の剥離液33は超音波発生器31によっ
て加振されている。A conventional lift-off device 3 for removing a resist mask in the above-mentioned TFT manufacturing includes a lift-off tank 32 having a plurality of ultrasonic wave generators 31 arranged on a bottom surface at a predetermined interval, as shown in FIG. And lift-off tank 32
A predetermined amount of the stripping solution 33 stored in the ultrasonic wave generator 31 is vibrated by the ultrasonic wave generator 31.
【0010】かかる剥離液33の中に浸漬された被処理基
板1を基板保持治具34によって水平に保持すると共に、
基板保持治具34が装着された基板揺動機構35を図示省略
された動力源によりXYZ方向に往復動させることによ
り、被処理基板1は剥離液33中において縦、横、および
深さ方向に揺動しレジストマスクが除去される。The substrate to be processed 1 immersed in the stripping solution 33 is held horizontally by the substrate holding jig 34, and
The substrate swing mechanism 35 with the substrate holding jig 34 mounted thereon is reciprocated in the XYZ directions by a power source (not shown), so that the substrate 1 to be processed is vertically, horizontally, and depthwise in the stripping solution 33. The resist mask is shaken and the resist mask is removed.
【0011】[0011]
【発明が解決しようとする課題】大型の被処理基板をリ
フトオフする装置において剥離液を加振する超音波の音
圧が不均一になると、音圧の大きい領域では全てのレジ
ストマスクが除去されるが音圧の小さい領域ではレジス
トマスクやその他の膜が残り、完成したパネル中に不良
のTFTが介在し画像の表示品質を低下させる原因にな
る。When the sound pressure of the ultrasonic waves for vibrating the stripping solution becomes non-uniform in the apparatus for lifting off a large substrate to be processed, all resist masks are removed in the region where the sound pressure is high. However, the resist mask and other films remain in the region where the sound pressure is small, and defective TFTs intervene in the completed panel, which causes deterioration of image display quality.
【0012】そこで従来のリフトオフ装置では剥離液を
加振する超音波の音圧が不均一になるのを防止する手段
として、超音波発生器の真上において超音波の強さにほ
ぼ比例して剥離液の液面が隆起することを利用して、液
面の隆起量がほぼ均一になるよう剥離液の液量や超音波
発生器の出力レベルを調整している。Therefore, in the conventional lift-off device, as a means for preventing the sound pressure of ultrasonic waves for vibrating the stripping solution from becoming non-uniform, it is proportional to the strength of the ultrasonic waves just above the ultrasonic generator. By utilizing the fact that the liquid surface of the stripping liquid rises, the liquid amount of the stripping liquid and the output level of the ultrasonic generator are adjusted so that the amount of rising of the liquid surface becomes almost uniform.
【0013】しかし、目視によって液面の隆起量の差を
検知することは極めて困難でその精度が低く調整に長い
時間を必要とする。しかも音圧の分布は剥離液の液量に
よって左右されるため剥離液の流出に合わせ頻繁に調整
しなければならない。However, it is extremely difficult to visually detect the difference in the amount of protrusion of the liquid surface, the accuracy is low, and a long time is required for the adjustment. Moreover, since the sound pressure distribution depends on the amount of the stripping solution, it must be adjusted frequently according to the outflow of the stripping solution.
【0014】また、従来のリフトオフ装置では被処理基
板の処理枚数が増えるに伴って剥離液が混濁し能力が低
下するため、所定枚数の処理が終わると処理を中断し剥
離液を入替え超音波の音圧を調整しなければならない等
の問題があった。Further, in the conventional lift-off device, as the number of processed substrates increases, the stripping solution becomes turbid and its ability deteriorates. Therefore, after the processing of a predetermined number of substrates is finished, the processing is interrupted and the stripping solution is replaced with ultrasonic waves. There was a problem that the sound pressure had to be adjusted.
【0015】本発明の目的は均一なリフトオフ処理が可
能で処理能力の高いリフトオフ装置を提供することにあ
る。An object of the present invention is to provide a lift-off device which is capable of uniform lift-off processing and has a high processing capacity.
【0016】[0016]
【課題を解決するための手段】図1は本発明になるリフ
トオフ装置を示す模式図である。なお全図を通し同じ対
象物は同一記号で表している。FIG. 1 is a schematic view showing a lift-off device according to the present invention. Note that the same object is denoted by the same symbol throughout the drawings.
【0017】上記課題は底に複数の超音波発生器31が所
定の間隔で配設され剥離液33を貯留するリフトオフ槽32
と、剥離液33に浸漬された被処理基板1を水平に保持す
る基板保持治具34と、被処理基板1を縦、横、または深
さ方向の少なくとも1方向に揺動せしめる基板揺動機構
35を有し、且つ、リフトオフ槽32内の複数の領域におけ
る超音波の音圧を計測し信号を出力する音圧検出機構4
と、リフトオフ槽32内の音圧分布を表示する音圧分布表
示機構5を具えてなる本発明の大型基板用リフトオフ装
置によって達成される。The above-mentioned problem is a lift-off tank 32 in which a plurality of ultrasonic wave generators 31 are arranged at predetermined intervals at the bottom and store a stripping solution 33.
And a substrate holding jig 34 for horizontally holding the substrate 1 to be processed immersed in the stripping solution 33, and a substrate swinging mechanism for swinging the substrate 1 to be processed in at least one of a vertical direction, a horizontal direction, and a depth direction.
A sound pressure detection mechanism 4 having 35 and measuring ultrasonic sound pressures in a plurality of regions in the lift-off tank 32 and outputting a signal.
And a lift-off device for large substrates according to the present invention, which comprises a sound pressure distribution display mechanism 5 for displaying the sound pressure distribution in the lift-off tank 32.
【0018】[0018]
【作用】図1において底に複数の超音波発生器が所定の
間隔で配設され剥離液を貯留するリフトオフ槽と、剥離
液に浸漬された被処理基板を水平に保持する基板保持治
具と、被処理基板を縦、横、または深さ方向の少なくと
も1方向に揺動せしめる基板揺動機構を有し、且つ、リ
フトオフ槽内の複数の領域における超音波の音圧を計測
し信号を出力する音圧検出機構と、リフトオフ槽内の音
圧分布を表示する音圧分布表示機構を具えてなる本発明
の大型基板用リフトオフ装置によって、リフトオフ槽内
の超音波の音圧分布を短時間で高精度に検出することが
可能になり調整時間が大幅に短縮される。即ち、均一な
リフトオフ処理が可能で処理能力の高いリフトオフ装置
を実現することができる。In FIG. 1, a lift-off tank in which a plurality of ultrasonic wave generators are arranged at predetermined intervals in the bottom to store a stripping solution, and a substrate holding jig for horizontally holding a substrate to be processed immersed in the stripping solution , Has a substrate swing mechanism that swings the substrate to be processed in at least one of the vertical, horizontal, and depth directions, and measures the sound pressure of ultrasonic waves in a plurality of regions in the lift-off tank and outputs a signal. The large-scale substrate lift-off device of the present invention, which includes a sound pressure detection mechanism that performs the sound pressure distribution and a sound pressure distribution display mechanism that displays the sound pressure distribution in the lift-off tank, enables the sound pressure distribution of the ultrasonic waves in the lift-off tank to be reduced in a short time. It becomes possible to detect with high accuracy, and the adjustment time is greatly shortened. That is, it is possible to realize a lift-off device capable of performing uniform lift-off processing and having high processing capacity.
【0019】[0019]
【実施例】以下添付図により本発明の実施例について説
明する。なお図2は本発明の一実施例を示す模式図、図
3は本発明の他の実施例を示す側断面図、図4は本発明
の更に他の実施例を示す側断面図である。Embodiments of the present invention will be described below with reference to the accompanying drawings. 2 is a schematic view showing an embodiment of the present invention, FIG. 3 is a side sectional view showing another embodiment of the present invention, and FIG. 4 is a side sectional view showing still another embodiment of the present invention.
【0020】TFTの製造においてレジストマスクを除
去する本発明になるリフトオフ装置は図1に示す如く、
底面に複数の超音波発生器31が所定の間隔で配設されて
なるリフトオフ槽32を具えており、リフトオフ槽32に貯
留された所定量の剥離液33は超音波発生器31によって加
振されている。A lift-off device according to the present invention for removing a resist mask in manufacturing a TFT is as shown in FIG.
The bottom surface is provided with a lift-off tank 32 in which a plurality of ultrasonic wave generators 31 are arranged at predetermined intervals, and a predetermined amount of stripping liquid 33 stored in the lift-off tank 32 is vibrated by the ultrasonic wave generator 31. ing.
【0021】かかる剥離液33の中に浸漬された被処理基
板1を基板保持治具34によって水平に保持すると共に、
基板保持治具34が装着された基板揺動機構35を図示省略
された動力源によりXYZ方向に往復動させることによ
り、被処理基板1は剥離液33中において縦、横、および
深さ方向に揺動しレジストマスクが除去される。The substrate 1 to be processed immersed in the stripping solution 33 is held horizontally by the substrate holding jig 34, and
The substrate swing mechanism 35 with the substrate holding jig 34 mounted thereon is reciprocated in the XYZ directions by a power source (not shown), so that the substrate 1 to be processed is vertically, horizontally, and depthwise in the stripping solution 33. The resist mask is shaken and the resist mask is removed.
【0022】また、本発明になるリフトオフ装置は従来
の装置とは異なり前記リフトオフ槽32の他に、リフトオ
フ槽32内の複数の領域における超音波の音圧を計測し信
号を出力する音圧検出機構4と、音圧検出機構4の出力
信号に基づきリフトオフ槽32内の音圧分布を表示する音
圧分布表示機構5を具えている。Further, unlike the conventional apparatus, the lift-off device according to the present invention detects the sound pressure of ultrasonic waves in a plurality of regions in the lift-off tank 32 in addition to the lift-off tank 32 and outputs a signal. The mechanism 4 and the sound pressure distribution display mechanism 5 for displaying the sound pressure distribution in the lift-off tank 32 based on the output signal of the sound pressure detection mechanism 4 are provided.
【0023】上記音圧検出機構4は等間隔で配列され先
端が剥離液33に浸漬された複数の音圧センサー41と、音
圧センサー41を保持し配列方向と直交する方向に移動せ
しめる移動機構42と、音圧センサー41の出力信号を音圧
に対応した電圧に変換する複数のアナライザ43とで構成
されている。The sound pressure detecting mechanism 4 has a plurality of sound pressure sensors 41 arranged at equal intervals and having their ends immersed in the peeling liquid 33, and a moving mechanism for holding the sound pressure sensors 41 and moving them in a direction orthogonal to the arrangement direction. 42 and a plurality of analyzers 43 that convert the output signal of the sound pressure sensor 41 into a voltage corresponding to the sound pressure.
【0024】そして音圧分布表示機構5は前記アナライ
ザ43の出力信号を制御装置51に入力するための入出力ボ
ード52と、入出力ボード52を介して制御装置51に接続さ
れ前記移動機構42を制御するコントローラ53と、制御装
置51に接続されリフトオフ槽32内の音圧分布を表示する
表示装置54とで構成されている。The sound pressure distribution display mechanism 5 is connected to the control device 51 via the input / output board 52 for inputting the output signal of the analyzer 43 to the control device 51, and the moving mechanism 42 by the input / output board 52. A controller 53 for controlling and a display device 54 connected to the control device 51 for displaying the sound pressure distribution in the lift-off tank 32 are configured.
【0025】かかるリフトオフ装置において音圧分布表
示機構5の表示装置54に表示された音圧分布に基づい
て、リフトオフ槽32内に貯留された剥離液33の液量、若
しくは超音波発生器31の出力レベルを調整し、リフトオ
フ槽32内の音圧分布を一様にすることによって均一なリ
フトオフ処理が可能になる。In the lift-off device, based on the sound pressure distribution displayed on the display device 54 of the sound pressure distribution display mechanism 5, the amount of the stripping liquid 33 stored in the lift-off tank 32 or the ultrasonic wave generator 31 is stored. By adjusting the output level and making the sound pressure distribution in the lift-off tank 32 uniform, uniform lift-off processing becomes possible.
【0026】しかも剥離液33中の被処理基板1が浸漬さ
れてなる領域における超音波の音圧分布を直接定量的に
表示されるため、リフトオフ槽32内に貯留された剥離液
33の液量、若しくは超音波発生器31の出力レベルを調整
する際の精度が高度化し、調整に要する時間を大幅に短
縮することが可能になる。Moreover, since the sound pressure distribution of ultrasonic waves in the region where the substrate 1 to be processed is immersed in the stripping solution 33 is directly quantitatively displayed, the stripping solution stored in the lift-off tank 32 is displayed.
The precision in adjusting the liquid amount of 33 or the output level of the ultrasonic generator 31 is enhanced, and the time required for the adjustment can be significantly shortened.
【0027】図2に示す本発明の一実施例は上記リフト
オフ装置における基板揺動機構35を移動機構42として利
用しており、等間隔で配列され先端が剥離液33に浸漬さ
れた複数の音圧センサー41は移動機構42の代わりに、保
持金具44を介して基板保持治具34を装着する基板揺動機
構35によって保持されている。In the embodiment of the present invention shown in FIG. 2, the substrate swing mechanism 35 in the lift-off device is used as the moving mechanism 42, and a plurality of sounds arranged at equal intervals and having their tips immersed in the stripping solution 33 are used. The pressure sensor 41 is held by a substrate swinging mechanism 35 that mounts a substrate holding jig 34 via a holding metal fitting 44 instead of the moving mechanism 42.
【0028】基板揺動機構35のXYZ方向への往復動は
図示省略された制御装置からの指令に基づいて行われて
おり、前記入出力ボード52を介して基板揺動機構35の制
御信号を制御装置51に入力することによって、基板揺動
機構35を利用して複数の音圧センサー41を移動せしめリ
フトオフ槽32内の音圧分布を検出することができる。The reciprocating movement of the substrate swinging mechanism 35 in the XYZ directions is performed based on a command from a controller (not shown), and a control signal of the substrate swinging mechanism 35 is transmitted via the input / output board 52. By inputting to the control device 51, the sound pressure distribution in the lift-off tank 32 can be detected by moving the plurality of sound pressure sensors 41 using the substrate swing mechanism 35.
【0029】しかも音圧センサー41は被処理基板1と同
時に移動して剥離液33中の音圧分布を直接定量的に検出
するため、リフトオフ処理中においても音圧分布の変化
を検知して修正することが可能になり、調整に要する時
間を更に短縮すると同時にリフトオフ装置の処理能力を
一層向上させることができる。Moreover, since the sound pressure sensor 41 moves simultaneously with the substrate 1 to be processed to directly and quantitatively detect the sound pressure distribution in the stripping liquid 33, the change in the sound pressure distribution is detected and corrected even during the lift-off process. Therefore, the time required for the adjustment can be further shortened, and at the same time, the processing capacity of the lift-off device can be further improved.
【0030】このように底に複数の超音波発生器が所定
の間隔で配設され剥離液を貯留するリフトオフ槽と、剥
離液に浸漬された被処理基板を水平に保持する基板保持
治具と、被処理基板を縦、横、または深さ方向の少なく
とも1方向に揺動せしめる基板揺動機構を有し、且つ、
リフトオフ槽内の複数の領域における超音波の音圧を計
測し信号を出力する音圧検出機構と、リフトオフ槽内の
音圧分布を表示する音圧分布表示機構を具えてなる本発
明の大型基板用リフトオフ装置によって、リフトオフ槽
内の超音波の音圧分布を短時間で高精度に検出すること
が可能になり調整時間が大幅に短縮される。即ち、均一
なリフトオフ処理が可能で処理能力の高いリフトオフ装
置を実現することができる。A lift-off tank in which a plurality of ultrasonic wave generators are thus arranged at a predetermined interval at the bottom to store the stripping solution, and a substrate holding jig for horizontally holding the substrate to be processed immersed in the stripping solution A substrate swing mechanism for swinging the substrate to be processed in at least one of a vertical direction, a horizontal direction, and a depth direction, and
A large-sized substrate of the present invention including a sound pressure detection mechanism that measures the sound pressure of ultrasonic waves in a plurality of regions in the lift-off tank and outputs a signal, and a sound pressure distribution display mechanism that displays the sound pressure distribution in the lift-off tank. The lift-off device can detect the sound pressure distribution of ultrasonic waves in the lift-off tank in a short time and with high accuracy, and the adjustment time can be greatly shortened. That is, it is possible to realize a lift-off device capable of performing uniform lift-off processing and having high processing capacity.
【0031】またリフトオフ槽内に貯留された剥離液で
繰り返し処理を行う従来のリフトオフ装置では被処理基
板の処理枚数が増えるに伴って、剥離液が混濁し能力が
低下して超音波の音圧分布が一様であっても均一なリフ
トオフ処理が不可能になる。かかる剥離液の混濁を防止
する手段としてフィルタを介して剥離液を循環せしめろ
過する方法がある。しかしリフトオフ処理中に剥離液を
循環せしめると液の表面に波が立ち超音波発生器の出力
が低下する。Further, in the conventional lift-off device which repeatedly performs the treatment with the stripping liquid stored in the lift-off tank, the stripping liquid becomes turbid and its capability is deteriorated as the number of substrates to be processed increases, and the sound pressure of ultrasonic waves is reduced. Even if the distribution is uniform, uniform lift-off processing becomes impossible. As a means for preventing the stripping solution from becoming turbid, there is a method in which the stripping solution is circulated through a filter and filtered. However, if the stripping solution is circulated during the lift-off process, a wave is generated on the surface of the solution and the output of the ultrasonic generator decreases.
【0032】図3に示す本発明の他の実施例は底面に複
数の超音波発生器31が所定の間隔で配設されてなるリフ
トオフ槽62と、フィルタ63を介してリフトオフ槽62内の
剥離液33を循環せしめるポンプ64を具えており、リフト
オフ槽32に貯留された所定量の剥離液33は超音波発生器
31によって加振されている。In another embodiment of the present invention shown in FIG. 3, a lift-off tank 62 having a plurality of ultrasonic wave generators 31 arranged on the bottom surface at a predetermined interval, and separation in the lift-off tank 62 via a filter 63. A pump 64 for circulating the liquid 33 is provided, and a predetermined amount of the stripping liquid 33 stored in the lift-off tank 32 is an ultrasonic wave generator.
Excited by 31.
【0033】そして剥離液循環時の波を消すため基板保
持治具34により保持された被処理基板1を剥離液33に浸
漬した後、例えば厚さが5mm程度で5mm×5mm程度の網
目を有する波消用の網目板61を剥離液33の液面近傍に浸
漬している。なお網目板61を浸漬することにより生じる
超音波発生器31の出力低下は無視できる程小さい。Then, after the substrate 1 to be processed held by the substrate holding jig 34 is immersed in the stripping solution 33 in order to eliminate waves during circulation of the stripping solution, for example, the thickness is about 5 mm and the mesh is about 5 mm × 5 mm. The wave-eliminating mesh plate 61 is immersed near the liquid surface of the peeling liquid 33. The decrease in output of the ultrasonic wave generator 31 caused by immersing the mesh plate 61 is negligibly small.
【0034】かかる剥離液33の中に浸漬された被処理基
板1を基板保持治具34によって水平に保持すると共に、
基板保持治具34が装着された基板揺動機構35を図示省略
された動力源によりXYZ方向に往復動させることによ
り、被処理基板1は剥離液33中において縦、横、および
深さ方向に揺動しレジストマスクが除去される。The substrate 1 to be processed immersed in the stripping solution 33 is held horizontally by the substrate holding jig 34, and
The substrate swing mechanism 35 with the substrate holding jig 34 mounted thereon is reciprocated in the XYZ directions by a power source (not shown), so that the substrate 1 to be processed is vertically, horizontally, and depthwise in the stripping solution 33. The resist mask is shaken and the resist mask is removed.
【0035】このようにリフトオフ槽62内に貯留された
剥離液33の液面近傍に波消用の網目板61を浸漬し、リフ
トオフ処理中に剥離液33の表面に波を立てることなく剥
離液33を循環させろ過することによって、リフトオフ処
理の中断が無くなりリフトオフ装置の処理能力が向上す
ると共に均一なリフトオフ処理が可能になる。In this way, the wave-eliminating mesh plate 61 is immersed in the vicinity of the liquid surface of the stripping solution 33 stored in the lift-off tank 62, and the stripping solution 33 is not corrugated on the surface of the stripping solution 33 during the lift-off process. By circulating and filtering 33, the lift-off process is not interrupted, the throughput of the lift-off device is improved, and uniform lift-off process is possible.
【0036】また図4に示す本発明の更に他の実施例は
底面に複数の超音波発生器31が所定の間隔で配設されて
なる複数のリフトオフ槽72と、フィルタ63を介してリフ
トオフ槽72内の剥離液33を循環せしめるポンプ64と、各
リフトオフ槽72の剥離液流入口71側にそれぞれ設けられ
た複数のバルブ73を具えている。In a further embodiment of the present invention shown in FIG. 4, a plurality of lift-off tanks 72 having a plurality of ultrasonic wave generators 31 arranged on the bottom surface at predetermined intervals, and a lift-off tank via a filter 63 are provided. A pump 64 for circulating the stripping solution 33 in the 72 and a plurality of valves 73 provided on the stripping solution inlet 71 side of each lift-off tank 72 are provided.
【0037】混濁した剥離液33をろ過する際はそのリフ
トオフ槽72の剥離液流入口71側に設けられたバルブ73を
開放状態にし、フィルタ63を介して循環する剥離液33を
リフトオフ槽72に流入せしめることによって、混濁した
剥離液33はリフトオフ槽72の上縁から横溢しポンプ64に
よって再びフィルタ63に送り込まれる。When the cloudy stripping solution 33 is filtered, the valve 73 provided on the stripping solution inlet 71 side of the lift-off tank 72 is opened, and the stripping solution 33 circulating through the filter 63 is transferred to the lift-off tank 72. By causing it to flow, the turbid stripping liquid 33 overflows from the upper edge of the lift-off tank 72 and is fed into the filter 63 again by the pump 64.
【0038】一方、リフトオフ処理を行う際はそのリフ
トオフ槽72の剥離液流入口71側に設けられたバルブ73を
閉止状態にし、リフトオフ槽72への剥離液33の流入を停
止すると共にコック74を開き剥離液33の液量を調整す
る。そして超音波発生器31を駆動することによってリフ
トオフ槽72内の剥離液33に超音波を印加する。On the other hand, when performing the lift-off process, the valve 73 provided on the stripping liquid inlet 71 side of the lift-off tank 72 is closed, the flow of the stripping liquid 33 into the lift-off tank 72 is stopped, and the cock 74 is turned on. The liquid amount of the opening peeling liquid 33 is adjusted. Then, by driving the ultrasonic generator 31, ultrasonic waves are applied to the peeling liquid 33 in the lift-off tank 72.
【0039】このように複数のリフトオフ槽72を設け1
個のリフトオフ槽72でリフトオフ処理を行っている間
に、他のリフトオフ槽72内の剥離液33をろ過し超音波の
音圧分布を調整するよう構成することによって、リフト
オフ処理の中断が無くなりリフトオフ装置の処理能力が
向上すると共に均一なリフトオフ処理が可能になる。As described above, a plurality of lift-off tanks 72 are provided.
While the lift-off process is being performed in each lift-off tank 72, the lift-off process can be eliminated by eliminating the interruption of the lift-off process by filtering the peeling liquid 33 in another lift-off tank 72 and adjusting the sound pressure distribution of ultrasonic waves. The processing capacity of the apparatus is improved and uniform lift-off processing is possible.
【0040】[0040]
【発明の効果】上述の如く本発明によれば均一なリフト
オフ処理が可能で処理能力の高いリフトオフ装置を提供
することができる。As described above, according to the present invention, it is possible to provide a lift-off device capable of performing uniform lift-off processing and having high processing capacity.
【図1】 本発明になるリフトオフ装置を示す模式図で
ある。FIG. 1 is a schematic view showing a lift-off device according to the present invention.
【図2】 本発明の一実施例を示す模式図である。FIG. 2 is a schematic view showing an embodiment of the present invention.
【図3】 本発明の他の実施例を示す側断面図である。FIG. 3 is a side sectional view showing another embodiment of the present invention.
【図4】 本発明の更に他の実施例を示す側断面図であ
る。FIG. 4 is a side sectional view showing still another embodiment of the present invention.
【図5】 TFTの製造工程の概要を示す図である。FIG. 5 is a diagram showing an outline of a manufacturing process of a TFT.
【図6】 従来のリフトオフ装置の主要部を示す斜視図
である。FIG. 6 is a perspective view showing a main part of a conventional lift-off device.
【符号の説明】 1 被処理基板 4 音圧検出機構 5 音圧分布表示機構 31 超音波発生器 32 リフトオフ槽 33 剥離液 34 基板保持治具 35 基板揺動機構 41 音圧センサー 42 移動機構 43 アナライザ 44 保持金具 51 制御装置 52 入出力ボード 53 コントローラ 54 表示装置 61 網目板 62 リフトオフ槽 63 フィルタ 64 ポンプ 71 剥離液流入口 72 リフトオフ槽 73 バルブ 74 コック[Explanation of symbols] 1 substrate to be processed 4 sound pressure detection mechanism 5 sound pressure distribution display mechanism 31 ultrasonic generator 32 lift-off tank 33 stripping liquid 34 substrate holding jig 35 substrate swinging mechanism 41 sound pressure sensor 42 moving mechanism 43 analyzer 44 Holding bracket 51 Control device 52 I / O board 53 Controller 54 Display device 61 Mesh plate 62 Lift-off tank 63 Filter 64 Pump 71 Stripping liquid inlet 72 Lift-off tank 73 Valve 74 Cock
───────────────────────────────────────────────────── フロントページの続き (72)発明者 星野 淳之 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Atsushi Hoshino 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited
Claims (5)
隔で配設され剥離液(33)を貯留するリフトオフ槽(32)
と、該剥離液(33)に浸漬された被処理基板(1)を水平に
保持する基板保持治具(34)と、該被処理基板(1) を縦、
横、または深さ方向の少なくとも1方向に揺動せしめる
基板揺動機構(35)を有し、 且つ、該リフトオフ槽(32)内の複数の領域における超音
波の音圧を計測し信号を出力する音圧検出機構(4) と、
該リフトオフ槽(32)内の音圧分布を表示する音圧分布表
示機構(5) を具えてなることを特徴とする大型基板用リ
フトオフ装置。1. A lift-off tank (32) having a plurality of ultrasonic generators (31) arranged at predetermined intervals at a bottom thereof and storing a stripping solution (33).
A substrate holding jig (34) for horizontally holding the substrate to be processed (1) immersed in the stripping solution (33), and the substrate to be processed (1) vertically,
It has a substrate rocking mechanism (35) that rocks laterally or in at least one direction in the depth direction, and also measures the sound pressure of ultrasonic waves in a plurality of regions within the lift-off tank (32) and outputs a signal. Sound pressure detection mechanism (4)
A lift-off device for a large substrate comprising a sound pressure distribution display mechanism (5) for displaying a sound pressure distribution in the lift-off tank (32).
隔に配列され先端が剥離液(33)に浸漬された複数の音圧
センサー(41)と、該音圧センサー(41)を保持し配列方向
と直交する方向に移動せしめる移動機構(42)と、該音圧
センサー(41)の出力信号を音圧に対応した電圧に変換す
る複数のアナライザ(43)からなり、 音圧分布表示機構(5) が前記アナライザ(43)の出力信号
を制御装置(51)に入力するための入出力ボード(52)と、
該入出力ボード(52)を介して該制御装置(51)に接続され
前記移動機構(42)を制御するコントローラ(53)と、該制
御装置(51)に接続されリフトオフ槽(32)内の音圧分布を
表示する表示装置(54)からなることを特徴とする大型基
板用リフトオフ装置。2. A plurality of sound pressure sensors (41), wherein the sound pressure detection mechanisms (4) according to claim 1 are arranged at equal intervals, and the tips are immersed in a stripping solution (33), and the sound pressure sensors (41). ), And a plurality of analyzers (43) that convert the output signal of the sound pressure sensor (41) into a voltage corresponding to the sound pressure (42). An input / output board (52) for the pressure distribution display mechanism (5) to input the output signal of the analyzer (43) to the control device (51),
A controller (53) connected to the control device (51) via the input / output board (52) to control the moving mechanism (42); and a lift-off tank (32) connected to the control device (51). A lift-off device for a large substrate, comprising a display device (54) for displaying a sound pressure distribution.
置において音圧分布表示機構(5) の表示内容に基づき、
リフトオフ槽(32)内に貯留された剥離液(33)の液量、若
しくは超音波発生器(31)の出力レベルを調整し、該リフ
トオフ槽(32)内の音圧分布を一様にすることを特徴とし
たリフトオフ装置の調整方法。3. The lift-off device for a large substrate according to claim 1, based on the display content of the sound pressure distribution display mechanism (5),
The volume of the stripping liquid (33) stored in the lift-off tank (32) or the output level of the ultrasonic generator (31) is adjusted to make the sound pressure distribution in the lift-off tank (32) uniform. A method for adjusting a lift-off device, which is characterized by the above.
隔で配設され剥離液(33)を貯留するリフトオフ槽(62)
と、被処理基板(1) を該剥離液(33)に浸漬したあと該剥
離液(33)の液面近傍に浸漬された波消用の網目板(61)
と、フィルタ(63)を介して該リフトオフ槽(62)内の剥離
液(33)を循環せしめるポンプ(64)を有し、 リフトオフ処理中に該剥離液(33)をろ過するよう構成さ
れてなることを特徴とする大型基板用リフトオフ装置。4. A lift-off tank (62) in which a plurality of ultrasonic wave generators (31) are arranged at predetermined intervals at a bottom to store a stripping solution (33).
And a wave-dissipating mesh plate (61) immersed in the stripping solution (33) after immersing the substrate (1) to be treated in the stripping solution (33)
And a pump (64) for circulating the stripping solution (33) in the lift-off tank (62) through a filter (63), and is configured to filter the stripping solution (33) during the lift-off process. A lift-off device for a large substrate, which is characterized in that
隔で配設され剥離液(33)を貯留する複数のリフトオフ槽
(72)と、フィルタ(63)を介して該リフトオフ槽(72)内の
剥離液(33)を循環せしめるポンプ(64)と、各リフトオフ
槽(72)の剥離液流入口(71)側にそれぞれ設けられた複数
のバルブ(73)を有し、 該剥離液(33)のろ過に際し該バルブ(73)を開放状態にし
て該リフトオフ槽(72)に該剥離液(33)を流入せしめ、該
リフトオフ槽(72)の上縁から横溢した該剥離液(33)を該
ポンプ(64)によって再び該フィルタ(63)に送り込み、 リフトオフ処理に際し処理を行う該リフトオフ槽(72)の
該バルブ(73)を閉止状態にすることによって、該剥離液
(33)の流入を停止するよう構成されてなることを特徴と
する大型基板用リフトオフ装置。5. A plurality of lift-off tanks in which a plurality of ultrasonic wave generators (31) are arranged at predetermined intervals at the bottom and store a stripping solution (33).
(72), a pump (64) for circulating the stripping liquid (33) in the lift-off tank (72) through a filter (63), and a stripping liquid inlet (71) side of each lift-off tank (72) Each of the plurality of valves (73) is provided, and when the stripping solution (33) is filtered, the valve (73) is opened to allow the stripping solution (33) to flow into the lift-off tank (72). The peeling liquid (33) overflowing from the upper edge of the lift-off tank (72) is sent again to the filter (63) by the pump (64), and the valve (of the lift-off tank (72) for performing the lift-off process is performed. 73) is closed to remove the stripping solution.
A lift-off device for a large substrate, which is configured to stop the inflow of (33).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21768491A JPH0555180A (en) | 1991-08-29 | 1991-08-29 | Lift-off device for large-sized substrate and regulating method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21768491A JPH0555180A (en) | 1991-08-29 | 1991-08-29 | Lift-off device for large-sized substrate and regulating method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0555180A true JPH0555180A (en) | 1993-03-05 |
Family
ID=16708103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21768491A Withdrawn JPH0555180A (en) | 1991-08-29 | 1991-08-29 | Lift-off device for large-sized substrate and regulating method therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0555180A (en) |
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US6337030B1 (en) | 1997-02-04 | 2002-01-08 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method |
US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
JP2008259998A (en) * | 2007-04-13 | 2008-10-30 | Shinka Jitsugyo Kk | Ultrasonic cleaning apparatus and method therefor |
CN111463172A (en) * | 2019-01-21 | 2020-07-28 | 瀚宇彩晶股份有限公司 | Method for manufacturing electronic device |
KR20210142243A (en) * | 2020-05-18 | 2021-11-25 | 성균관대학교산학협력단 | Device for lift-off process |
CN117133632A (en) * | 2023-10-26 | 2023-11-28 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Double-frequency ultrasonic crack propagation and single crystal SiC stripping device |
-
1991
- 1991-08-29 JP JP21768491A patent/JPH0555180A/en not_active Withdrawn
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6337030B1 (en) | 1997-02-04 | 2002-01-08 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method |
US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
JP2008259998A (en) * | 2007-04-13 | 2008-10-30 | Shinka Jitsugyo Kk | Ultrasonic cleaning apparatus and method therefor |
CN111463172A (en) * | 2019-01-21 | 2020-07-28 | 瀚宇彩晶股份有限公司 | Method for manufacturing electronic device |
KR20210142243A (en) * | 2020-05-18 | 2021-11-25 | 성균관대학교산학협력단 | Device for lift-off process |
CN117133632A (en) * | 2023-10-26 | 2023-11-28 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Double-frequency ultrasonic crack propagation and single crystal SiC stripping device |
CN117133632B (en) * | 2023-10-26 | 2024-02-20 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Double-frequency ultrasonic crack propagation and single crystal SiC stripping device |
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