JPH0551892B2 - - Google Patents
Info
- Publication number
- JPH0551892B2 JPH0551892B2 JP26093987A JP26093987A JPH0551892B2 JP H0551892 B2 JPH0551892 B2 JP H0551892B2 JP 26093987 A JP26093987 A JP 26093987A JP 26093987 A JP26093987 A JP 26093987A JP H0551892 B2 JPH0551892 B2 JP H0551892B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- cross
- photoresist
- photomask
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置製造におけるフオトレジス
トパターンの形成に用いられるフオトマスクに関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask used for forming a photoresist pattern in semiconductor device manufacturing.
従来、半導体装置の製造に用いられるフオトマ
スクは、第４図に示すように、平らなガラス基板
１Ａとその表面に形成された金属膜や金属酸化膜
等からなる遮光膜２とから構成されていた。
Conventionally, a photomask used in the manufacture of semiconductor devices, as shown in FIG. 4, has been composed of a flat glass substrate 1A and a light shielding film 2 made of a metal film, metal oxide film, etc. formed on the surface of the glass substrate 1A. .
上述した従来のフオトマスクは、ガラス基板１
Ａが平らであるため、このフオトマスクを用い半
導体基板上のフオトレジスト膜を露光し現像した
場合、形成されるフオトレジスタのパターンの断
面形状は全て同一となる。従つて、このようにし
て形成されたフオトレジストのパターンをマスク
とし導体膜や絶縁膜をエツチングした場合、その
断面（エツチング面形状は全て同一となつてい
た。
The conventional photomask described above has a glass substrate 1
Since A is flat, when a photoresist film on a semiconductor substrate is exposed and developed using this photomask, the cross-sectional shapes of the photoresist patterns formed will all be the same. Therefore, when a conductive film or an insulating film is etched using the photoresist pattern thus formed as a mask, the cross-sections (etched surface shapes) are all the same.
しかしながら、たとえば、金属配線をゲート電
極として用いる場合、金属配線の断面形状はでき
るだけ急峻な段である事がMOSトランジスタの
特性の安定化にとつては望ましい。一方、単に金
属配線として用いる場合は、その断面形状が急峻
な段となると、その上部に形成される金属配線が
その段部で断線しやすくなる為、下層の金属配線
の断面形状は、できるだけ、ゆるいテーパーを持
つ構造である事が望ましい。 However, for example, when a metal wiring is used as a gate electrode, it is desirable for the cross-sectional shape of the metal wiring to have as steep a step as possible in order to stabilize the characteristics of the MOS transistor. On the other hand, when using the metal wiring simply as a metal wiring, if the cross-sectional shape becomes a steep step, the metal wiring formed on the upper layer is likely to break at that step. It is desirable that the structure has a gentle taper.
この二つの金属配線構造を形成する為には、従
来のフオトマスクを用いた方法では、工程が長く
なるという問題点があつた。 In order to form these two metal wiring structures, the conventional method using a photomask has the problem of requiring a long process.
本発明のフオトマスクは、透明基板の一面に段
差のある領域の溝部を設け、前記透明基板の一面
の前記溝部を除く表面に電極形成用の遮光膜を形
成し、前記透明基板の溝部の表面に配線形成用の
遮光膜を形成したものである。
In the photomask of the present invention, a groove in a stepped area is provided on one surface of the transparent substrate, a light-shielding film for forming an electrode is formed on the surface of the one surface of the transparent substrate excluding the groove, and a light-shielding film for forming an electrode is formed on the surface of the groove of the transparent substrate. A light shielding film for forming wiring is formed.
実施例
次に、本発明の実施例について図面を参照して
説明する。Embodiments Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。 FIG. 1 is a sectional view of an embodiment of the present invention.
第１図において、フオトマスク１０はガラス基
板１とその表面に形成されたクロム等からなる遮
光膜２Ａ，２Ｂとから構成されているが、特にこ
のガラス基板１には段差３が設けられている。こ
の段差は、例えばフオトレジストをマスクとしガ
ラス基板１をエツチングすることより容易に形成
できる。 In FIG. 1, a photomask 10 is composed of a glass substrate 1 and light shielding films 2A and 2B made of chromium or the like formed on the surface of the glass substrate 1. In particular, the glass substrate 1 is provided with a step 3. This step can be easily formed by etching the glass substrate 1 using, for example, a photoresist as a mask.
このように構成された本実施例を用い、半導体
基板上にフオトレジストをパターンを形成するた
めに露光装置によつて焼き付け転写を行なう場
合、焦点深度の差によつて、焦点の合つた部分
と、焦点のずれた部分とが生じ、その結果、半導
体基板上に形成されるフオトレジストパターンの
断面形状、及び膜厚に差が生ずる。従つてこのフ
オトレジスト材料をエツチングする場合、その断
面形状に差が生じ、目的に応じた断面形状を一度
の焼き付け転写によつて形成する事ができる。 When using this embodiment configured in this manner and performing printing transfer using an exposure device to form a photoresist pattern on a semiconductor substrate, the difference in depth of focus causes the in-focus area to , out-of-focus portions occur, and as a result, differences occur in the cross-sectional shape and film thickness of the photoresist pattern formed on the semiconductor substrate. Therefore, when this photoresist material is etched, a difference occurs in its cross-sectional shape, and a cross-sectional shape depending on the purpose can be formed by one-time printing and transfer.
以下、本実施例を用い、多結晶シリコン膜をエ
ツチングする場合について第２図を用いて説明す
る。 Hereinafter, the case of etching a polycrystalline silicon film using this embodiment will be explained with reference to FIG.
まず第２図ａに示すように、表面にSiO2等か
らなる絶縁膜１２、多結晶シリコン膜１１及びポ
ジ型のフオトレジスト膜１４が形成された半導体
基板１３上に、遮光膜２Ａ，２Ｂからなるパター
ンが形成された本実施例のフオトマスク１０を配
置し、その上から紫外線１５を照射し、フオトレ
ジスト膜１４を露光する。この時遮光膜２Ｂの方
が遮光膜２Ａのより焦点が合つているとする。 First, as shown in FIG. 2a, a semiconductor substrate 13 on which an insulating film 12 made of SiO 2 or the like, a polycrystalline silicon film 11, and a positive photoresist film 14 are formed is coated with light-shielding films 2A and 2B. The photomask 10 of this embodiment having a pattern formed thereon is placed, and ultraviolet rays 15 are irradiated from above to expose the photoresist film 14. At this time, it is assumed that the light shielding film 2B is more focused than the light shielding film 2A.
次に第２図ｂに示すように、現像処理を行うと
遮光膜２Ｂ下のフオトレジスト膜１４Ａには遮光
膜２Ｂのパターンが正確に転写され、その断面は
急峻な形状を示す。一方遮光膜２Ａ下のフオトレ
ジスト膜１４Ｂにはその断面形状にゆるやかなテ
ーパーが形成される。 Next, as shown in FIG. 2B, when a development process is performed, the pattern of the light shielding film 2B is accurately transferred to the photoresist film 14A under the light shielding film 2B, and its cross section shows a steep shape. On the other hand, a gentle taper is formed in the cross-sectional shape of the photoresist film 14B under the light shielding film 2A.
次に第２図ｃに示すように、フオトレジスト膜
１４Ａ，１４Ｂをマスクとして異方性エツチング
法により多結晶シリコン膜１１をエツチングす
る。このエツチングによりフオトレジスト膜１４
Ａ下の多結晶シリコン膜１１Ａの断面形状は急峻
になるが、フオトレジスト膜１４Ｂ下の多結晶シ
リコン膜１１Ｂにはテーパーが形成されることに
なる。 Next, as shown in FIG. 2c, polycrystalline silicon film 11 is etched by anisotropic etching using photoresist films 14A and 14B as masks. By this etching, the photoresist film 14
The cross-sectional shape of the polycrystalline silicon film 11A under A becomes steep, but a taper is formed in the polycrystalline silicon film 11B under the photoresist film 14B.
第３図ａ，ｂは上記実施例のフオトマスクを用
いて多結晶シリコン膜をエツチングし、
MOSFETのゲート電極２０と配線２１を形成し
た場合の断面図である。 FIGS. 3a and 3b show etching of a polycrystalline silicon film using the photomask of the above embodiment,
FIG. 2 is a cross-sectional view of a MOSFET when a gate electrode 20 and wiring 21 are formed.
MOSFETのゲート電極はチヤネル長の安定性
を得る為には、できるだけその断面形状は、テー
パーがつていない事が望ましい。一方、その他の
配線部分に用いる場合は上層部の他の金属配線の
断線を防止し、かつ、表面保護膜及び層間絶縁膜
のステツプカバレージの状態を良くする為には、
その断面形状はテーパーができるだけついている
方が望ましい。 In order to obtain stability of the channel length of the gate electrode of a MOSFET, it is desirable that its cross-sectional shape is as untapered as possible. On the other hand, when using it for other wiring parts, in order to prevent disconnection of other metal wiring in the upper layer and to improve the step coverage of the surface protection film and interlayer insulation film,
It is desirable that the cross-sectional shape be as tapered as possible.
本実施例を用いることにより第３図ａ，ｂに示
したように、急峻な断面形状を有するゲート電極
２０とテーパーを有する配線２１を容易に形成で
きる。 By using this embodiment, as shown in FIGS. 3a and 3b, the gate electrode 20 having a steep cross-sectional shape and the tapered wiring 21 can be easily formed.
以上説明したように本発明は、フオトマスクを
構成する透明基板に段差を設けることによりパタ
ーニングされたフオトレジスト膜からなるマスク
の断面形状を異なつたものとすることができるた
め、このマスクを用いて断面形状の異つた電極、
配線等を半導体基板上に容易に形成できる効果が
ある。
As explained above, in the present invention, the cross-sectional shape of the mask made of a patterned photoresist film can be made different by providing steps on the transparent substrate constituting the photomask. electrodes of different shapes,
This has the effect that wiring and the like can be easily formed on a semiconductor substrate.
第１図は本発明の一実施例の断面図、第２図ａ
〜ｃは本発明の一実施例を多結晶シリコンのパタ
ーニングに適用した場合を説明するための半導体
チツプの断面図、第３図ａ，ｂは本発明の一実施
例をMOSFETの製造に適用した場合を説明する
ための断面図、第４図は従来のフオトマスクの断
面図である。
１，１Ａ…ガラス基板、２，２Ａ，２Ｂ…遮光
膜、３…段差、１０…フオトマスク、１１，１１
Ａ，１１Ｂ…多結晶シリコン膜、１２…絶縁膜、
１３…半導体基板、１４，１４Ａ，１４Ｂ…フオ
トレジスト膜、１５…紫外線、２０…ゲート電
極、２１…配線。
Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2a
-c are cross-sectional views of a semiconductor chip for explaining the case where an embodiment of the present invention is applied to patterning of polycrystalline silicon, and Figures 3a and 3b are cross-sectional views of a semiconductor chip in which an embodiment of the present invention is applied to the manufacture of MOSFET. A cross-sectional view for explaining the case, FIG. 4 is a cross-sectional view of a conventional photomask. 1, 1A... Glass substrate, 2, 2A, 2B... Light shielding film, 3... Step, 10... Photomask, 11, 11
A, 11B... polycrystalline silicon film, 12... insulating film,
13... Semiconductor substrate, 14, 14A, 14B... Photoresist film, 15... Ultraviolet rays, 20... Gate electrode, 21... Wiring.
Claims (1)
け、前記透明基板の一面の前記溝部を除く表面に
電極形成用の遮光膜を形成し、前記透明基板の溝
部の表面に配線形成用の遮光膜を形成したことを
特徴とするフオトマスク。1. A groove in a stepped area is provided on one surface of the transparent substrate, a light shielding film for electrode formation is formed on the surface of the one surface of the transparent substrate excluding the groove, and a light shielding film for forming wiring is formed on the surface of the groove of the transparent substrate. A photomask characterized by forming a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260939A JPH01102464A (en) | 1987-10-15 | 1987-10-15 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260939A JPH01102464A (en) | 1987-10-15 | 1987-10-15 | Photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01102464A JPH01102464A (en) | 1989-04-20 |
| JPH0551892B2 true JPH0551892B2 (en) | 1993-08-03 |
Family
ID=17354875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62260939A Granted JPH01102464A (en) | 1987-10-15 | 1987-10-15 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01102464A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0592295U (en) * | 1992-05-15 | 1993-12-17 | 淑朗 矢田貝 | Forklets for cargo handling and forklift pawls |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100347541B1 (en) * | 1999-12-23 | 2002-08-07 | 주식회사 하이닉스반도체 | Reticle for manufacturing a semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5379387A (en) * | 1976-12-23 | 1978-07-13 | Nec Corp | Optical mask |
-
1987
- 1987-10-15 JP JP62260939A patent/JPH01102464A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5379387A (en) * | 1976-12-23 | 1978-07-13 | Nec Corp | Optical mask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0592295U (en) * | 1992-05-15 | 1993-12-17 | 淑朗 矢田貝 | Forklets for cargo handling and forklift pawls |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01102464A (en) | 1989-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |