JPH0548072Y2 - - Google Patents
Info
- Publication number
- JPH0548072Y2 JPH0548072Y2 JP17915387U JP17915387U JPH0548072Y2 JP H0548072 Y2 JPH0548072 Y2 JP H0548072Y2 JP 17915387 U JP17915387 U JP 17915387U JP 17915387 U JP17915387 U JP 17915387U JP H0548072 Y2 JPH0548072 Y2 JP H0548072Y2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- core tube
- furnace core
- heater
- furnace body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000004568 cement Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000012634 fragment Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
Landscapes
- Muffle Furnaces And Rotary Kilns (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は高温加熱炉に関する。[Detailed explanation of the idea] [Industrial application field] The present invention relates to a high temperature heating furnace.
一般に炉芯管を用いる小型の高温加熱炉は、炉
芯管に巻かれたヒータを非酸化性雰囲気中におく
構造が用いられている。以下図面により説明す
る。
Generally, a small high-temperature heating furnace using a furnace core tube has a structure in which a heater wound around the furnace core tube is placed in a non-oxidizing atmosphere. This will be explained below with reference to the drawings.
第２図ａ，ｂは従来の高温加熱炉の一例の正面
図及びＢ−B′線断面図である。 FIGS. 2a and 2b are a front view and a sectional view taken along the line B-B' of an example of a conventional high-temperature heating furnace.
同図において、高温加熱炉の炉体１の中心部に
は大口径の多孔質炉芯管２が固定されており、炉
体１の外壁３とこの多孔質炉芯管２とで囲まれた
内部には耐酸化性断熱粉粒体、例えばアルミナセ
メント４が充填されている。そして、多孔質炉芯
管２の中央下部には、多孔質炉芯管２内に非酸化
性ガスを導入するガス導入管５が接続されてい
る。 In the figure, a large-diameter porous furnace core tube 2 is fixed at the center of a furnace body 1 of a high-temperature heating furnace, and is surrounded by an outer wall 3 of the furnace body 1 and this porous furnace core tube 2. The inside is filled with oxidation-resistant heat insulating powder, such as alumina cement 4. A gas introduction pipe 5 for introducing non-oxidizing gas into the porous furnace core tube 2 is connected to the lower center of the porous furnace core tube 2 .
ヒータ６が巻かれたセラミツク炉芯管７は多孔
質炉芯管２の中央部におかれ、その両端が炉体１
の外壁３により支持固定されている。尚、９はセ
ラミツク炉芯管への非酸化性ガス導入口である。
このように構成された高温加熱炉においてはアル
ミナセメント４が断熱及び耐火材としての役目を
はたしている。そして、ガス導入管５より導入さ
れる非酸化性ガス、例えば水素によりヒータ６の
酸化が防止され、導入された水素ガスは多孔質炉
芯管２及びアルミナセメント４を通り排気口８よ
り外部に排出されるようになつている。 A ceramic furnace core tube 7 around which a heater 6 is wound is placed in the center of the porous furnace core tube 2, and both ends thereof are connected to the furnace body 1.
It is supported and fixed by the outer wall 3 of. Note that 9 is a non-oxidizing gas introduction port to the ceramic furnace core tube.
In the high-temperature heating furnace configured in this manner, the alumina cement 4 serves as a heat insulator and a refractory material. Oxidation of the heater 6 is prevented by a non-oxidizing gas such as hydrogen introduced from the gas introduction pipe 5, and the introduced hydrogen gas passes through the porous furnace core tube 2 and the alumina cement 4 and exits from the exhaust port 8. It is beginning to be excreted.
しかしながら、高温加熱炉を1700℃以上の高温
で使用した場合、30時間程で多孔質炉芯管２に割
れが発生し、その破片がヒータ６に当り断線を生
ずる欠点があつた。そのため、多孔質炉芯管２を
頻繁に交換しなければならず、作業能率が低下す
るという不都合があつた。さらに、セラミツク炉
芯管７が、その両端部で支持されているため炉芯
管７内に挿入する試料（被処理物）の重量等によ
り変形するという欠点もあつた。
However, when the high-temperature heating furnace is used at a high temperature of 1700° C. or higher, cracks occur in the porous furnace core tube 2 after about 30 hours, and the cracks hit the heater 6, causing wire breakage. Therefore, the porous furnace core tube 2 had to be replaced frequently, resulting in a disadvantage that work efficiency was reduced. Furthermore, since the ceramic furnace core tube 7 is supported at both ends thereof, there is also the drawback that it deforms due to the weight of the sample (workpiece) inserted into the furnace core tube 7.
本考案の目的は上記欠点を除去し、ヒータの割
れ及びセラミツク炉芯管の変形をなくした高温加
熱炉を提供することにある。 The object of the present invention is to eliminate the above-mentioned drawbacks and to provide a high-temperature heating furnace which eliminates cracks in the heater and deformation of the ceramic furnace core tube.
上述した従来の大口径多孔質炉芯管を使用した
ヒータの酸化防止構造に対し、本考案は大口径炉
芯管を使用せずアルミナセメントだけでヒータの
酸化防止を図るという相違点を有する。
In contrast to the above-mentioned conventional structure for preventing oxidation of the heater using a large-diameter porous furnace core tube, the present invention has a difference in that the heater is prevented from oxidation using only alumina cement without using a large-diameter furnace core tube.
本考案は非酸化性ガスの排出口を備えた炉体
と、該炉体内に充填された耐酸化性断熱粉粒体
と、ヒータを巻き付けた主要部が前記粉粒体中に
埋設された炉芯管と、炉体内上部に位置し前記炉
体内に非酸化性ガスを導入するガス導入口とを有
することを特徴とする高温加熱炉である。
The present invention includes a furnace body equipped with a non-oxidizing gas discharge port, an oxidation-resistant heat insulating granular material filled in the furnace body, and a furnace in which a main part around which a heater is wound is buried in the granular material. The present invention is a high-temperature heating furnace characterized by having a core tube and a gas introduction port located at the upper part of the furnace body and introducing non-oxidizing gas into the furnace body.
次に本考案の実施例を図面を用いて説明する。
第１図ａ，ｂは本考案の一実施例の正面図及びＡ
−A′線断面図である。
Next, embodiments of the present invention will be described using the drawings.
Figures 1a and 1b are front views of one embodiment of the present invention, and Figures 1a and 1b are
-A' line sectional view.
第１図ａ，ｂにおいて、上部にガス導入口１１
及び下部にガス排出口１０を有する炉体１内には
耐酸化性断熱粉粒体として、30メツシユ程度の粒
度を有するアルミナセメント４が充填されてお
り、その中心部にはヒータ６を巻き付けたセラミ
ツク炉芯管７の主要部が埋設されている。 In Figures 1a and b, the gas inlet 11 is located at the top.
A furnace body 1 having a gas outlet 10 at the bottom is filled with alumina cement 4 having a particle size of about 30 mesh as an oxidation-resistant insulating powder, and a heater 6 is wrapped around the center of the furnace body 1. The main part of the ceramic furnace core tube 7 is buried.
ガス導入口１１より導入された非酸化性ガス、
例えば水素は上部の空洞部１ａに入り中の比重の
重い空気や窒素を下部に追い出し、ガス排出口１
０から水素だけが排出されるようになる。ガス排
出口１０には目づまりを防ぐために50メツシユ以
上の金網１２で覆つてある。 non-oxidizing gas introduced from the gas inlet 11;
For example, hydrogen enters the upper cavity 1a and expels the heavy air and nitrogen inside to the lower part, and the gas exhaust port 1
Only hydrogen will be emitted from 0. The gas discharge port 10 is covered with a wire mesh 12 of 50 or more meshes to prevent clogging.
このように構成された高温加熱炉においては、
従来用いていた多孔質炉芯管を不要としたため、
その交換のための工数が不要となるばかりでな
く、多孔質炉芯管の割れに伴う破片によるヒータ
６の断線がなくなる。更に、セラミツク炉芯管７
は、アルミナセメント４によりその主要部全体が
支持固定されるためセラミツク炉芯管７内に挿入
される被処理物により変形することはない。 In the high-temperature heating furnace configured in this way,
Since the porous furnace core tube used in the past is no longer required,
Not only does it eliminate the need for man-hours for its replacement, but also eliminates disconnection of the heater 6 due to fragments caused by cracks in the porous furnace core tube. Furthermore, ceramic furnace core tube 7
Since the entire main part thereof is supported and fixed by the alumina cement 4, it will not be deformed by the object to be treated inserted into the ceramic furnace core tube 7.
以上説明したように本考案によれば、多孔質炉
芯管をなくし、セラミツク炉芯管を耐酸化性断熱
粉粒体で支持する構造とすることにより、ヒータ
の割れ及びセラミツク炉芯管の変形をなくした高
温加熱炉が得られ、その効果は大きいものであ
る。
As explained above, according to the present invention, by eliminating the porous furnace core tube and adopting a structure in which the ceramic furnace core tube is supported by oxidation-resistant heat insulating powder, cracks in the heater and deformation of the ceramic furnace core tube can be avoided. A high-temperature heating furnace that eliminates this is obtained, and its effects are significant.
第１図ａは本考案の一実施例の正面図、第１図
ｂは第１図ａのＡ−A′線断面図、第２図ａは従
来の高温加熱炉の一例の正面図、第２図ｂは第２
図ａのＢ−B′線断面図である。
１……炉体、２……多孔質炉芯管、３……外
壁、４……アルミナセメント、５……ガス導入
管、６……ヒータ、７……セラミツク炉芯管、８
……排気口、９，１１……ガス導入口、１０……
ガス排出口、１２……金網。
Fig. 1a is a front view of an embodiment of the present invention, Fig. 1b is a sectional view taken along the line A-A' of Fig. Figure 2b is the second
FIG. DESCRIPTION OF SYMBOLS 1... Furnace body, 2... Porous furnace core tube, 3... Outer wall, 4... Alumina cement, 5... Gas introduction pipe, 6... Heater, 7... Ceramic furnace core tube, 8
...Exhaust port, 9,11...Gas inlet port, 10...
Gas outlet, 12... wire mesh.
Claims (1)
内に充填された耐酸化性断熱粉粒体と、ヒータを
巻き付けた主要部が前記粉粒体中に埋設された炉
芯管と、炉体内上部に位置し前記炉体内に非酸化
性ガスを導入するガス導入口とを有することを特
徴とする高温加熱炉。 A furnace body equipped with a non-oxidizing gas outlet, an oxidation-resistant heat insulating powder filled in the furnace, and a furnace core tube whose main part around which a heater is wound is buried in the powder. A high-temperature heating furnace comprising: a gas inlet located at an upper part of the furnace body for introducing a non-oxidizing gas into the furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17915387U JPH0548072Y2 (en) | 1987-11-25 | 1987-11-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17915387U JPH0548072Y2 (en) | 1987-11-25 | 1987-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0182497U JPH0182497U (en) | 1989-06-01 |
| JPH0548072Y2 true JPH0548072Y2 (en) | 1993-12-20 |
Family
ID=31470733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17915387U Expired - Lifetime JPH0548072Y2 (en) | 1987-11-25 | 1987-11-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0548072Y2 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
-
1987
- 1987-11-25 JP JP17915387U patent/JPH0548072Y2/ja not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0182497U (en) | 1989-06-01 |
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