[go: up one dir, main page]

JPH0543789B2 - - Google Patents

Info

Publication number
JPH0543789B2
JPH0543789B2 JP4783284A JP4783284A JPH0543789B2 JP H0543789 B2 JPH0543789 B2 JP H0543789B2 JP 4783284 A JP4783284 A JP 4783284A JP 4783284 A JP4783284 A JP 4783284A JP H0543789 B2 JPH0543789 B2 JP H0543789B2
Authority
JP
Japan
Prior art keywords
sample
argon
mof
molybdenum
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4783284A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60190560A (ja
Inventor
Eiji Igawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4783284A priority Critical patent/JPS60190560A/ja
Publication of JPS60190560A publication Critical patent/JPS60190560A/ja
Publication of JPH0543789B2 publication Critical patent/JPH0543789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP4783284A 1984-03-13 1984-03-13 モリブデンのデポジシヨン方法 Granted JPS60190560A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4783284A JPS60190560A (ja) 1984-03-13 1984-03-13 モリブデンのデポジシヨン方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4783284A JPS60190560A (ja) 1984-03-13 1984-03-13 モリブデンのデポジシヨン方法

Publications (2)

Publication Number Publication Date
JPS60190560A JPS60190560A (ja) 1985-09-28
JPH0543789B2 true JPH0543789B2 (de) 1993-07-02

Family

ID=12786325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4783284A Granted JPS60190560A (ja) 1984-03-13 1984-03-13 モリブデンのデポジシヨン方法

Country Status (1)

Country Link
JP (1) JPS60190560A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324033A (ja) * 1986-07-16 1988-02-01 Nippon Kokan Kk <Nkk> 化学気相蒸着処理を利用した金属材の製造方法

Also Published As

Publication number Publication date
JPS60190560A (ja) 1985-09-28

Similar Documents

Publication Publication Date Title
US5510011A (en) Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
JPH0697660B2 (ja) 薄膜形成方法
JPS6354215B2 (de)
JPH0359986B2 (de)
JPH0245927A (ja) エッチング方法
US5230971A (en) Photomask blank and process for making a photomask blank using gradual compositional transition between strata
JPS5814507B2 (ja) シリコンを選択的にイオン食刻する方法
JPH0518906B2 (de)
JPH0543789B2 (de)
JPH05326380A (ja) 薄膜組成物とこれを用いたｘ線露光用マスク
JPS63317676A (ja) 無粒構造金属化合物薄膜の製造方法
CA2288757A1 (en) Method of forming a silicon layer on a surface
JPS63233549A (ja) 薄膜形成法
JP3926690B2 (ja) ガスクラスターイオン援用酸化物薄膜形成方法
JP7488147B2 (ja) ハードマスク及びハードマスクの製造方法
JPS637364A (ja) バイアススパツタ装置
JPH06291063A (ja) 表面処理装置
JPS63203760A (ja) ガラス基板面への無機質膜の形成方法及びその装置
JP2744505B2 (ja) シリコンスパッタリング装置
JP3009072B2 (ja) 半導体表面エッチング法
JPH0247848B2 (de)
JP2687468B2 (ja) 薄膜形成装置
JPH09246259A (ja) 薄膜形成方法及び装置
JPH06295889A (ja) 微細パターン形成方法
JPH0559991B2 (de)