JPH0534507A - Antistatic film and production thereof - Google Patents
Antistatic film and production thereofInfo
- Publication number
- JPH0534507A JPH0534507A JP3214446A JP21444691A JPH0534507A JP H0534507 A JPH0534507 A JP H0534507A JP 3214446 A JP3214446 A JP 3214446A JP 21444691 A JP21444691 A JP 21444691A JP H0534507 A JPH0534507 A JP H0534507A
- Authority
- JP
- Japan
- Prior art keywords
- antistatic film
- solution
- fine particles
- liquid
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010419 fine particle Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 6
- 150000003839 salts Chemical class 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 239000002904 solvent Substances 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 18
- 239000010936 titanium Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
- CVBUKMMMRLOKQR-UHFFFAOYSA-N 1-phenylbutane-1,3-dione Chemical compound CC(=O)CC(=O)C1=CC=CC=C1 CVBUKMMMRLOKQR-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- MZQGJNWVOVFLLS-UHFFFAOYSA-N 3-benzoyl-1,1,1-trifluoropentane-2,4-dione Chemical compound FC(F)(F)C(=O)C(C(=O)C)C(=O)C1=CC=CC=C1 MZQGJNWVOVFLLS-UHFFFAOYSA-N 0.000 description 1
- REIYHFWZISXFKU-UHFFFAOYSA-N Butyl acetoacetate Chemical compound CCCCOC(=O)CC(C)=O REIYHFWZISXFKU-UHFFFAOYSA-N 0.000 description 1
- -1 R) y · R 4-y (y = 3 Chemical class 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- NZZIMKJIVMHWJC-UHFFFAOYSA-N dibenzoylmethane Chemical compound C=1C=CC=CC=1C(=O)CC(=O)C1=CC=CC=C1 NZZIMKJIVMHWJC-UHFFFAOYSA-N 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- VBZWSGALLODQNC-UHFFFAOYSA-N hexafluoroacetone Chemical compound FC(F)(F)C(=O)C(F)(F)F VBZWSGALLODQNC-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はブラウン管パネル等のガ
ラス基体表面に塗布される帯電防止膜に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antistatic film applied on the surface of a glass substrate such as a cathode ray tube panel.
【0002】[0002]
【従来の技術】ブラウン管は高電圧で作動するため起動
時、或は終了時にブラウン管表面に静電気が誘発され
る。この静電気により該表面にほこりが付着しコントラ
スト低下を引き起こしたり、或は直接触れた際軽い電気
ショックによる不快感を生ずることが多い。2. Description of the Related Art Since a cathode ray tube operates at a high voltage, static electricity is induced on the surface of the cathode ray tube at the time of starting or ending. This static electricity often causes dust to adhere to the surface to cause a reduction in contrast, or causes a discomfort due to a slight electric shock when directly touched.
【0003】従来、上述の事柄を防止するためにブラウ
ン管パネル表面に帯電防止膜を付与する試みがかなりな
されてきた。例えば特開昭63−76247号記載の通
り、ブラウン管パネル表面を350℃程度に加熱しCV
D法により酸化スズ及び酸化インジウム等の導電性酸化
物層を設ける方法が採用されてきた。しかしながらこの
方法では装置コストがかかることに加え、ブラウン管を
高温加熱するためブラウン管内の蛍光体の脱落を生じた
り、寸法精度が低下する等の問題があった。In the past, many attempts have been made to provide an antistatic film on the surface of a cathode ray tube panel in order to prevent the above-mentioned problems. For example, as described in JP-A-63-76247, the surface of the cathode ray tube panel is heated to about 350 ° C. to perform CV.
A method of providing a conductive oxide layer such as tin oxide and indium oxide by the D method has been adopted. However, in this method, there is a problem in that in addition to the cost of the apparatus, heating of the cathode ray tube at a high temperature causes the fluorescent substance in the cathode ray tube to fall off and the dimensional accuracy to decrease.
【0004】[0004]
【発明が解決しようとする課題】本発明は従来技術が有
していた前述の欠点を解消しようとするものであり、低
温熱処理が可能な帯電防止膜を新規に提供することを目
的とするものである。SUMMARY OF THE INVENTION The present invention is intended to solve the above-mentioned drawbacks of the prior art, and an object thereof is to provide a novel antistatic film which can be heat-treated at a low temperature. Is.
【0005】[0005]
【課題を解決するための手段】本発明は前述の問題点を
解決すべくなされたものであり、Tiのβ−ジケトン錯
体、その塩またはアルコキシド、これらの加水分解物の
中から選ばれる少なくとも1種と、導電性微粒子とが水
と有機溶媒の混合溶液中に分散または溶解している塗布
液を基体上に塗布して帯電防止膜を製造することを特徴
とする帯電防止膜の製造方法を提供する。The present invention has been made to solve the above-mentioned problems, and at least one selected from Ti β-diketone complexes, salts or alkoxides thereof, and hydrolyzates thereof. A method for producing an antistatic film, which comprises producing a antistatic film by applying a coating solution in which a seed and conductive particles are dispersed or dissolved in a mixed solution of water and an organic solvent onto a substrate. provide.
【0006】導電性微粒子としては、SbやF をドープし
たSnO2微粒子や、導電性酸化チタンの微粒子、ITO (Sn
をドープしたIn2O3 )の微粒子、RuO2微粒子、及びSnO2
−RuO2、TiO2−RuO2等の複合酸化物微粒子が挙げられ
る。The conductive fine particles include SnO 2 fine particles doped with Sb and F, fine particles of conductive titanium oxide, and ITO (Sn
-Doped In 2 O 3 ) fine particles, RuO 2 fine particles, and SnO 2
Examples thereof include complex oxide fine particles such as —RuO 2 and TiO 2 —RuO 2 .
【0007】これらの導電性微粒子は均一に水に分散さ
せることが重要である。また分散する際、溶液と粉末の
接触を容易ならしめるため撹拌を行うことが望ましい。
この場合、コロイドミル、ボールミル、サンドミル、ホ
モミキサー等の市販の粉砕器を用いることができる。ま
た分散させる際には、20〜200℃の範囲で加熱する
こともできる。溶液の沸点以上で撹拌する場合には加圧
して液相が保持できるようにする。このように導電性微
粒子がコロイド粒子として分散した水性ゾルが得られ
る。It is important that these conductive fine particles are uniformly dispersed in water. When dispersing, it is desirable to stir to facilitate contact between the solution and the powder.
In this case, a commercially available crusher such as a colloid mill, a ball mill, a sand mill or a homomixer can be used. Moreover, when dispersing, it is also possible to heat in the range of 20 to 200 ° C. When stirring above the boiling point of the solution, pressurize to maintain the liquid phase. Thus, an aqueous sol in which the conductive fine particles are dispersed as colloidal particles can be obtained.
【0008】導電性微粒子を分散させた液には、微粒子
が凝集して沈澱するのを防ぎ、安定したゾルをつくるた
めに分散液に、Ti(C5H7O2)2(OR)2 等の、Tiのβ−ジケ
トン錯体、その塩またはアルコキシド、これらの加水分
解物の中から選ばれる少なくとも1種を添加しておくこ
とが好ましい。こうすることにより、β−ジケトンが微
粒子のまわりをおおうことによる立体障害効果、及びβ
−ジケトンの最表面が正に帯電することによって形成さ
れる電気2重層により、微粒子同志が反発し、安定した
ゾル液を形成できる。In the liquid in which the conductive fine particles are dispersed, in order to prevent the fine particles from aggregating and precipitating and forming a stable sol, Ti (C 5 H 7 O 2 ) 2 (OR) 2 is added to the dispersion liquid. It is preferable to add at least one selected from the β-diketone complex of Ti, a salt or alkoxide thereof, and a hydrolyzate thereof. By doing so, the β-diketone covers the fine particles, and the steric hindrance effect, and β
-The electric double layer formed by the outermost surface of the diketone being positively charged repels the fine particles to form a stable sol liquid.
【0009】この効果を得るためにはTiのβ−ジケトン
錯体、その塩またはアルコキシド、これらの加水分解物
の添加量は、合計で酸化物換算で、SnO2:TiO2=1:
0.1〜1.0好ましくは1:0.2〜0.4とするの
がよい。これを導電性微粒子のゾルに分散させることに
より導電性微粒子のゾルを安定化させることができる。In order to obtain this effect, the addition amount of Ti β-diketone complex, its salt or alkoxide, and their hydrolyzate is SnO 2 : TiO 2 = 1: 3 in terms of oxide.
0.1 to 1.0, preferably 1: 0.2 to 0.4. By dispersing this in a sol of conductive fine particles, the sol of conductive fine particles can be stabilized.
【0010】本発明で使用するβ−ジケトンとしては、
アセチルアセトン、トリフルオロアセチルアセトン、ベ
ンゾイルアセトン、ヘキサフルオロアセトン、ベンゾイ
ルトリフルオロアセチルアセトン、ジベンゾイルメタ
ン、アセト酢酸メチルエステル、アセト酢酸エチルエス
テル、アセト酢酸ブチルエステル等が挙げられる。The β-diketone used in the present invention includes
Acetylacetone, trifluoroacetylacetone, benzoylacetone, hexafluoroacetone, benzoyltrifluoroacetylacetone, dibenzoylmethane, acetoacetic acid methyl ester, acetoacetic acid ethyl ester, acetoacetic acid butyl ester and the like can be mentioned.
【0011】本発明における水性ゾルはそのまま用いる
こともできるが基体に対する塗布性を増すために有機溶
媒に分散または置換して用いることも可能である。親水
性有機溶媒としてはメタノール、エタノール、プロパノ
ール、ブタノール等のアルコール類、エチルセロソルブ
等のエーテル類が任意に使用できる。The aqueous sol of the present invention can be used as it is, but it can also be used by dispersing or substituting it in an organic solvent in order to enhance the coating property on the substrate. As the hydrophilic organic solvent, alcohols such as methanol, ethanol, propanol and butanol, and ethers such as ethyl cellosolve can be arbitrarily used.
【0012】また本発明にて用いる液体には膜の付着強
度を及び硬度を向上させるためにバインダーとしてSi(O
R)y・R4-y(y=3、4、R:アルキル基)等のケイ素化
合物を添加することも可能である。さらに基体との濡れ
性を向上させるために種々の界面活性剤を添加すること
もできる。またTi化合物をさらに混合し、高屈折率の膜
を得ることもできる。The liquid used in the present invention contains Si (O 2) as a binder in order to improve the adhesion strength and hardness of the film.
It is also possible to add a silicon compound such as R) y · R 4-y (y = 3, 4, R: alkyl group). Further, various surfactants can be added to improve the wettability with the substrate. Further, a Ti compound can be further mixed to obtain a film having a high refractive index.
【0013】上記で合成したゾル液の基体上への塗布法
としては従来用いられてきた方法、即ちスピンコート
法、ディップコート法、スプレーコート法などが好適に
使用できる。また、スプレーコートして表面に凹凸を形
成し、防眩効果も併せて付与することもできる。さらに
は、本発明の帯電防止膜の上にスプレーコートして、表
面に凹凸を有するシリカ被膜のノングレアコートを設け
てもよい。As a method of coating the sol solution synthesized above on the substrate, a conventionally used method, that is, a spin coating method, a dip coating method, a spray coating method or the like can be preferably used. It is also possible to apply spray coating to form irregularities on the surface, and also to provide an antiglare effect. Further, the antistatic film of the present invention may be spray-coated to provide a non-glare coat of silica coating having irregularities on the surface.
【0014】また、同様に本発明の帯電防止膜の上に、
MgF2、SiO2等の低屈折率の材料を含む液を適宜の光学膜
厚となるようにコートして、多層干渉効果による低反射
の帯電防止膜とすることもできる。Similarly, on the antistatic film of the present invention,
A liquid containing a material having a low refractive index such as MgF 2 or SiO 2 may be coated so as to have an appropriate optical film thickness to form a low reflection antistatic film due to a multilayer interference effect.
【0015】本発明の帯電防止膜を形成する基体として
は、ブラウン管パネル、複写機用ガラス板、計算器用パ
ネル、クリーンルーム用ガラス、CRT或はLCD等の
表示装置の前面板等の各種ガラス、プラスチック基板を
用いることができる。As the substrate for forming the antistatic film of the present invention, various glass such as cathode ray tube panel, glass plate for copying machine, computer panel, clean room glass, front plate of display device such as CRT or LCD, and plastic. A substrate can be used.
【0016】本発明の塗布液は低沸点の溶媒を用いた場
合、室温での乾燥で均一な膜を得られるが、高沸点溶媒
を用いた場合或は膜の強度を向上させたい場合、塗布し
た基板を加熱かつ/またはUV(紫外線)を照射する。
加熱温度の上限は基板に用いられるガラス、プラスチッ
ク等の軟化点によって決定される。この点も考慮すると
好ましい温度範囲は100〜500℃である。The coating solution of the present invention can obtain a uniform film by drying at room temperature when a solvent having a low boiling point is used, but when a solvent having a high boiling point is used or when the strength of the film is desired to be improved, the coating solution is applied. The formed substrate is heated and / or irradiated with UV (ultraviolet).
The upper limit of the heating temperature is determined by the softening point of glass, plastic, etc. used for the substrate. Considering this point, the preferable temperature range is 100 to 500 ° C.
【0017】[0017]
【実施例】以下に本発明の実施例を挙げ更に説明を行う
が、本発明はこれらに限定されるものではない。以下の
実施例及び比較例にて得られた膜の評価は膜表面の表面
抵抗値、ヘーズ、1kg荷重下における鉛筆硬度につい
て行った。The present invention will be further described below with reference to examples of the present invention, but the present invention is not limited thereto. The films obtained in the following Examples and Comparative Examples were evaluated for surface resistance of the film surface, haze, and pencil hardness under a load of 1 kg.
【0018】[実施例1]平均粒径60ÅのSbドープSn
O2をサンドミルで粉砕して得たSnO2ゾル液をエタノール
で3wt%に希釈した。(A液)
Ti(C5H7O2)2(OC3H7)2 のエタノール溶液に塩酸水溶液を
Ti(C5H7O2)2(OC3H7)2に対して8mol 比添加し1時間撹
拌し、TiO2換算固形分濃度が3wt%となるように調製し
た。(B液)[Example 1] Sb-doped Sn having an average particle size of 60Å
A SnO 2 sol liquid obtained by grinding O 2 with a sand mill was diluted to 3 wt% with ethanol. (Liquid A) Add an aqueous hydrochloric acid solution to an ethanol solution of Ti (C 5 H 7 O 2 ) 2 (OC 3 H 7 ) 2.
8 mol ratio was added to Ti (C 5 H 7 O 2 ) 2 (OC 3 H 7 ) 2 and the mixture was stirred for 1 hour, and prepared so that the solid content concentration in terms of TiO 2 was 3 wt%. (Liquid B)
【0019】A液とB液をA液:B液=25:9重量比
となるように混合した。(C液)
Si(OC2H5)4のエタノール溶液に、Si(OC2H5)4に対して塩
酸水溶液を9mol 比添加し、SiO2換算固形分濃度が3w
t%となるように調製した。(D液)
C液とD液をC液:D液=17:8重量比となるように
混合しこの溶液を70mmφガラス板表面に750rpmの回
転速度で5秒間スピンコート法で塗布し、その後200
℃で30分加熱した。The liquid A and the liquid B were mixed so that the ratio of the liquid A to the liquid B was 25: 9. A (C solution) Si (OC 2 H 5) 4 in ethanol, hydrochloric acid aqueous solution was added 9mol ratio relative to Si (OC 2 H 5) 4 , is in terms of SiO 2 solid content concentration 3w
It was adjusted to be t%. (Solution D) Solution C and Solution D were mixed in a ratio of Solution C: Solution D: 17: 8 by weight, and this solution was applied onto a 70 mmφ glass plate surface by a spin coating method at a rotation speed of 750 rpm for 5 seconds, and 200
Heat at 30 ° C. for 30 minutes.
【0020】[実施例2]A液とB液をA液:B液=
5:1重量比となるように混合した。(E液)
C液のかわりにE液を用いてE液:D液=3:2重量比
となるように混合した以外は実施例1と同様に行った。[Example 2] Liquid A and liquid B were liquid A: liquid B =
The mixture was mixed at a 5: 1 weight ratio. (Solution E) The same operation as in Example 1 was carried out except that instead of the solution C, the solution E was used and mixed so that the solution E: solution D = 3: 2 weight ratio was obtained.
【0021】[実施例3]Ti(OC3H7)4のエタノール溶液
にメチルアセトアセテートをTi(OC3H7)4に対して1mol
比添加し1時間撹拌した後、塩酸水溶液をTi(OC3H7)4に
対して2mol 比添加してさらに1時間撹拌した。(F
液)
D液とF液をD液:F液=4:1重量比となるように混
合した。(G液)
D液のかわりにG液を用いてE液:G液=3:2となる
ように混合した以外は実施例2と同様に行った。[0021] 1mol [Example 3] Ti (OC 3 H 7) 4 methyl acetoacetate in ethanol solution with respect to Ti (OC 3 H 7) 4
After a specific addition and stirring for 1 hour, an aqueous hydrochloric acid solution was added at a ratio of 2 mol with respect to Ti (OC 3 H 7 ) 4 and further stirred for 1 hour. (F
Liquid) Liquid D and liquid F were mixed at a ratio of D liquid: F liquid = 4: 1 by weight. (Solution G) The same operation as in Example 2 was carried out except that instead of the solution D, the solution G was used and mixed so that the solution E: solution G = 3: 2.
【0022】[比較例]C液のかわりにA液を用いる以
外は実施例1と同様に行った。[Comparative Example] The same procedure as in Example 1 was carried out except that the solution A was used instead of the solution C.
【0023】実施例1〜3、比較例において得られた膜
の評価結果を表1に示す。Table 1 shows the evaluation results of the films obtained in Examples 1 to 3 and Comparative Example.
【0024】[0024]
【表1】 [Table 1]
【0025】[0025]
【発明の効果】本発明によればスプレーまたはスピンコ
ートあるいは溶液中に基体を浸漬するなどの簡便な方法
により効率よく優れた帯電防止膜を提供することが可能
となる。本発明は生産性に優れ、かつ真空を必要としな
いので装置も比較的安価なものでよい。特にCRTのパ
ネルフェイス面等の大面積の基体にも充分適用でき、量
産も可能であるため工業的価値は非常に高い。According to the present invention, an excellent antistatic film can be efficiently provided by a simple method such as spraying, spin coating or immersing a substrate in a solution. Since the present invention is excellent in productivity and does not require a vacuum, the apparatus may be relatively inexpensive. In particular, it can be applied to a large-area substrate such as a panel face surface of a CRT and can be mass-produced, so that its industrial value is very high.
【0026】またTiのβ−ジケトン錯体、その塩または
アルコキシド、これらの加水分解物の中から選ばれる少
なくとも1種を加えることによりSnO2等の導電性粒子が
塗布液中で安定に分散し高性能な膜が得られる。By adding at least one selected from β-diketone complexes of Ti, salts or alkoxides thereof, and hydrolysates thereof, conductive particles such as SnO 2 are stably dispersed in the coating solution and are highly dispersed. A high-performance film is obtained.
フロントページの続き (72)発明者 阿部 啓介 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 (72)発明者 久保田 恵子 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 (72)発明者 河里 健 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内Continued front page (72) Inventor Keisuke Abe 1150 Hazawa-machi, Kanagawa-ku, Yokohama-shi, Kanagawa Asahi Glass Co., Ltd. Central Research Laboratory (72) Inventor Keiko Kubota 1150 Hazawa-machi, Kanagawa-ku, Yokohama-shi, Kanagawa Asahi Glass Co., Ltd. Central Research Laboratory (72) Inventor Ken Kawari 1150 Hazawa-machi, Kanagawa-ku, Yokohama-shi, Kanagawa Asahi Glass Co., Ltd. Central Research Laboratory
Claims (5)
コキシド、これらの加水分解物の中から選ばれる少なく
とも1種と、導電性微粒子とが水と有機溶媒の混合溶液
中に分散または溶解している塗布液を基体上に塗布して
帯電防止膜を製造することを特徴とする帯電防止膜の製
造方法。1. A β-diketone complex of Ti, at least one selected from a salt or alkoxide thereof, and a hydrolyzate thereof, and conductive fine particles are dispersed or dissolved in a mixed solution of water and an organic solvent. A method for producing an antistatic film, which comprises applying the coating liquid to a substrate to produce the antistatic film.
電防止膜の製造方法。2. The method for producing an antistatic film according to claim 1, wherein the coating liquid contains a silicon compound.
によって得られた帯電防止膜。3. An antistatic film obtained by the method for producing an antistatic film according to claim 1.
ガラス基体上に帯電防止膜を形成したガラス物品。4. A glass article having an antistatic film formed on a glass substrate by the method for producing an antistatic film according to claim 1.
ブラウン管表面に帯電防止膜を形成したブラウン管。5. A Braun tube having an antistatic film formed on the surface of the Braun tube by the method for producing an antistatic film according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3214446A JPH0534507A (en) | 1991-07-31 | 1991-07-31 | Antistatic film and production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3214446A JPH0534507A (en) | 1991-07-31 | 1991-07-31 | Antistatic film and production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0534507A true JPH0534507A (en) | 1993-02-12 |
Family
ID=16655902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3214446A Withdrawn JPH0534507A (en) | 1991-07-31 | 1991-07-31 | Antistatic film and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0534507A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0156460B1 (en) * | 1984-01-31 | 1989-10-18 | Matsushita Electric Industrial Co., Ltd. | Pick-up arm for an optical disk player |
KR100727760B1 (en) * | 2003-09-18 | 2007-06-13 | 주식회사 엘지화학 | Metal oxide dispersion using beta-diketone as a dispersant and an antistatic conductive coating film using the same |
-
1991
- 1991-07-31 JP JP3214446A patent/JPH0534507A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0156460B1 (en) * | 1984-01-31 | 1989-10-18 | Matsushita Electric Industrial Co., Ltd. | Pick-up arm for an optical disk player |
KR100727760B1 (en) * | 2003-09-18 | 2007-06-13 | 주식회사 엘지화학 | Metal oxide dispersion using beta-diketone as a dispersant and an antistatic conductive coating film using the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH1145619A (en) | Conductive composition, transparent conductive film formed by using this, and its manufacture | |
EP0416119A1 (en) | Formation of thin magnesium fluoride film and low-reflection film | |
JP3473272B2 (en) | Coating liquid for conductive film formation and conductive film | |
JPH09263716A (en) | Overcoat composition for transparent electrically conductive film excellent in electical conductivity | |
JP3982967B2 (en) | Transparent film-forming coating solution, transparent film-coated substrate and display device | |
JP3697760B2 (en) | Coating liquid | |
JP3219450B2 (en) | Method for producing conductive film, low reflection conductive film and method for producing the same | |
JPH0534507A (en) | Antistatic film and production thereof | |
JP3367241B2 (en) | Low reflective / electromagnetic shielding transparent conductive film and paint for its formation | |
JPH05107403A (en) | High refractivity conductive film or low reflective anti-static film and manufacture thereof | |
JP3002327B2 (en) | Paint for forming conductive / high refractive index film and transparent material laminate with conductive / high refractive index film | |
JP3338970B2 (en) | Coating solution for forming transparent conductive film and low-reflection transparent conductive film | |
JP2000191948A (en) | Composition for forming film having function for improving color purity | |
JPH07305000A (en) | Antistatic coating composition | |
JP2003020449A (en) | Electroconductive coating material and method for forming electroconductive coated film using the same | |
US5334409A (en) | Cathode ray tube and process for producing same | |
JPH05120921A (en) | Transparent conductive film and its manufacture | |
JP3288417B2 (en) | CRT panel having low reflection conductive film formed thereon and method of manufacturing the same | |
JPH03167739A (en) | Antistatic film | |
JP2002367428A (en) | Application liquid for forming colored transparent conductive film, base body with the colored transparent conductive film, method of manufacture and display device | |
JP3514192B2 (en) | Method for forming low reflective conductive film | |
JPH05234433A (en) | Manufacture of conductive film | |
JP3661244B2 (en) | Method for forming conductive film and low reflective conductive film | |
JPH05124838A (en) | Electric conductive film and its production | |
JP3308511B2 (en) | Method of forming CRT panel with conductive film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981008 |