JPH0533532B2 - - Google Patents
Info
- Publication number
- JPH0533532B2 JPH0533532B2 JP61185531A JP18553186A JPH0533532B2 JP H0533532 B2 JPH0533532 B2 JP H0533532B2 JP 61185531 A JP61185531 A JP 61185531A JP 18553186 A JP18553186 A JP 18553186A JP H0533532 B2 JPH0533532 B2 JP H0533532B2
- Authority
- JP
- Japan
- Prior art keywords
- connection bumps
- connection
- bumps
- lsi chip
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置に関し、特に多端子を有
する集積回路チツプ(以下、LSIチツプという。)
のバンプ構造を改良した半導体装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor devices, and particularly to integrated circuit chips (hereinafter referred to as LSI chips) having multiple terminals.
The present invention relates to a semiconductor device having an improved bump structure.
従来、この種のLSIチツプの電気検査並び端子
接続は、LSIチツプの周辺部に単列の接続用バン
プを形成し、絶縁フイルム上に形成された配線と
前記接続バンプを接続する周知のTAB(Tape
Automated Bonding)技術により行なわれてい
た。
Conventionally, electrical inspection and terminal connection of this type of LSI chip have been carried out by forming a single row of connection bumps around the periphery of the LSI chip, and using the well-known TAB ( Tape
This was done using Automated Bonding technology.
第3図,第4図は、従来例の断面図、平面図で
ある。1は、周辺部に単列の接続バンプを有する
LSIチツプであり、35mm幅の絶縁フイルム7に形
成された金メツキされた入出力端子4が接続バン
プ2に接続される。第3図に示す如く、金メツキ
された端子4は、LSIチツプとの接続部では、絶
縁フイルム7の支持がない片持ち梁の状態になつ
ている。一方、多端子接続の為に端子ピツチを狭
くすると、端子幅も狭くしなければならない。そ
の為、端子強度が弱くなり、又、変形してLSIチ
ツプの端部において電気的シヨートを起こし易く
なる。
3 and 4 are a sectional view and a plan view of a conventional example. 1 has a single row of connection bumps on the periphery
This is an LSI chip, and gold-plated input/output terminals 4 formed on an insulating film 7 with a width of 35 mm are connected to connection bumps 2. As shown in FIG. 3, the gold-plated terminal 4 is in the state of a cantilever without the support of the insulating film 7 at the connection part with the LSI chip. On the other hand, if the terminal pitch is narrowed for multi-terminal connection, the terminal width must also be narrowed. As a result, the terminal strength becomes weak, and the terminal becomes deformed, making it easy to cause electrical shoots at the ends of the LSI chip.
さらに、第4図に示す如く接続バンプ2をLSI
チツプ周辺部に単列に形成する為に多くの入出力
端子を必要とするLSIチツプにおいては、接続バ
ンプ2の間隔を狭くしなければならない。その
為、多くの入出力端子を必要とするLSIチツプに
おいて、必要な接続用バンプ間距離を確保し、か
つ、多くの接続バンプをLSIチツプの周辺部に単
列に形成しようとする場合には、LSIチツプサイ
ズが大きくなり、歩留りが低下し、原価も高くな
る。 Furthermore, as shown in Fig. 4, the connection bump 2 is connected to the LSI
In an LSI chip that requires many input/output terminals to be formed in a single row around the chip, the spacing between the connection bumps 2 must be narrowed. Therefore, in an LSI chip that requires many input/output terminals, if you want to secure the necessary distance between connection bumps and form many connection bumps in a single row around the LSI chip, , LSI chip size increases, yield decreases, and cost increases.
このように、従来のLSIチツプの接続バンプ
は、LSIチツプの周辺部の単列に形成されている
ために、多くの入出力端子を必要とする半導体装
置において、必要入出力端子を形成することが困
難となるという欠点があつた。また、LSIチツプ
の端部(接続バンプとLSIチツプエツヂ間)にお
いて電気的シヨートを起こす欠点をも合せ持つて
いた。 In this way, since the connection bumps of conventional LSI chips are formed in a single row around the periphery of the LSI chip, it is difficult to form the necessary input/output terminals in semiconductor devices that require many input/output terminals. The disadvantage was that it was difficult to It also had the disadvantage of causing electrical shoots at the edges of the LSI chip (between the connection bump and the LSI chip edge).
本発明の目的は、上述した従来技術の欠点があ
るを解決し、多くの入出力接続バンプとシヨート
防止バンプとを有する半導体装置を提供すること
にある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned drawbacks of the prior art and to provide a semiconductor device having a large number of input/output connection bumps and shot prevention bumps.
本発明の半導体装置は、表面上の4辺の周辺部
の各辺にほぼ平行にそれぞれ設けられた1列の複
数個の第1の接続バンプ、前記周辺部の1辺に平
行に2列をなしてほぼ中央に配置された複数個の
第2の接続バンプ、および前記第1,第2の接続
バンプの外側に設けられた複数個のシヨート防止
バンプから成る集積回路チツプと、表面上に複数
個の試験用電極と電気的導体とが接続されて成る
絶縁フイルムとを具備し、前記第2の接続バンプ
それぞれの、前記1辺と直角方向の中心線が前記
第1の接続バンプの間に位置することを特徴とす
る。 The semiconductor device of the present invention includes a plurality of first connection bumps in one row substantially parallel to each side of the four peripheral parts on the surface, and two rows of first connection bumps provided in parallel to one side of the peripheral part. an integrated circuit chip comprising: a plurality of second connection bumps disposed substantially centrally; and a plurality of shot prevention bumps provided on the outside of the first and second connection bumps; an insulating film in which test electrodes and electrical conductors are connected, and a center line of each of the second connection bumps in a direction perpendicular to the one side is between the first connection bumps. It is characterized by being located.
次に、本発明について図面を参照して詳細に説
明する。
Next, the present invention will be explained in detail with reference to the drawings.
第1図は、本発明による半導体装置の一実施例
を示す断面図であり、第2図は、前記一実施例を
示す平面図である。 FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a plan view showing the embodiment.
第1図及び第2図に示すように、LSIチツプ1
の表面の内部と4辺の周辺部に、周知のメツキ技
術により金メツキされた接続バンプ2とシヨート
防止バンプ3を形成している。接続バンプ2は、
周辺部はそれぞれ1列であり、中央部のものは2
列で、1つの周辺部の列に平行であり、その列と
直角方向の中心線が周辺部のものの間に位置する
ように配置形成されている。 As shown in Figures 1 and 2, LSI chip 1
Gold-plated connection bumps 2 and shot prevention bumps 3 are formed on the inside of the surface and around the four sides by a well-known plating technique. Connection bump 2 is
Each peripheral part has one row, and the central one has two rows.
The rows are parallel to and perpendicular to one peripheral row and are arranged such that a centerline perpendicular to that row is located between the peripheral rows.
一方、絶縁フイルム7のLSIチツプ収納部8を
前もつて打ち抜き、その絶縁フイルム7上に銅箔
を密着されて、所定の複数個の入出力端子4と配
線パターン5と試験用電極6とを周知のエツチン
グ技術と金メツキ技術により形成している。 On the other hand, the LSI chip accommodating portion 8 of the insulating film 7 is punched out from the front, copper foil is closely adhered onto the insulating film 7, and a plurality of predetermined input/output terminals 4, wiring patterns 5, and test electrodes 6 are attached. It is formed using well-known etching and gold plating techniques.
さらに、前記の如く配置形成された複数個の接
続バンプ2と複数個の入出力端子4を1対1に位
置合せし、両者を周知の接続技術(例えば熱圧
着)により接続する。 Furthermore, the plurality of connection bumps 2 arranged and formed as described above and the plurality of input/output terminals 4 are aligned one-to-one, and the two are connected by a well-known connection technique (for example, thermocompression bonding).
又、前記シヨート防止バンプ3は前記接続バン
プとチツプエツヂ間において前記入出力端子4下
に少なくとも1個が形成(本実施例では1個)さ
れている。 Further, at least one shot prevention bump 3 (one in this embodiment) is formed below the input/output terminal 4 between the connection bump and the chip edge.
このようにして多くの入出力端子を有する半導
体装置を実現する。 In this way, a semiconductor device having many input/output terminals is realized.
以上説明したように本発明は、第1にLSIチツ
プの内部と周辺部に形成された複数個の接続バン
プを列方向にそれぞれが重ならない位置で千鳥状
に配置することにより多くの入出力端子を必要と
するLSIチツプが実現でき、第2に前記接続バン
プとチツプエツヂ間にシヨート防止バンプをチツ
プ表面で、かつ接続バンプに接続されているそれ
ぞれの入出力端子に少なくとも1個形成すること
により、入出力端子がLSIチツプと接触して電気
的にシヨートすることを防止でき、第3に前記接
続バンプがLSIチツプの内部にも存在するので
LSIチツプでの入出力端子と内部回路を接続する
場合の設計すなわちレイアウト設計がやり易くな
る効果がある。
As explained above, the present invention firstly provides a large number of input/output terminals by arranging a plurality of connection bumps formed inside and on the periphery of an LSI chip in a staggered manner in columns so that they do not overlap. Second, by forming at least one shot prevention bump on the chip surface between the connection bump and the chip edge and on each input/output terminal connected to the connection bump, This prevents the input/output terminals from coming into contact with the LSI chip and causing electrical shock, and thirdly, the connection bumps are also present inside the LSI chip.
This has the effect of making it easier to design the connection between input/output terminals and internal circuits on an LSI chip, that is, layout design.
第1図、第2図は本発明の一実施例の断面図、
平面図、第3図、第4図は従来例の断面図、平面
図である。
1…LSIチツプ、2…接続バンプ、3…シヨー
ト防止バンプ、4…入出力端子、5…配線パター
ン、6…試験用電極、7…絶縁フイルム、8…
LSIチツプ収納部。
FIGS. 1 and 2 are cross-sectional views of an embodiment of the present invention,
The plan view, FIGS. 3 and 4 are a sectional view and a plan view of the conventional example. 1... LSI chip, 2... Connection bump, 3... Shoot prevention bump, 4... Input/output terminal, 5... Wiring pattern, 6... Test electrode, 7... Insulating film, 8...
LSI chip storage section.
Claims (1)
れぞれ設けられた1列の複数個の第1の接続バン
プ、前記周辺部の1辺に平行に2列をなしてほぼ
中央に配置された複数個の第2の接続バンプ、お
よび前記第1,第2の接続バンプの外側に設けら
れた複数個のシヨート防止バンプから成る集積回
路チツプと、表面上に複数個の試験用電極と電気
的導体とが接続されて成る絶縁フイルムとを具備
し、前記第2の接続バンブそれぞれの、前記1辺
と直角方向の中心線が前記第1の接続バンプの間
に位置することを特徴とする半導体装置。1. A plurality of first connection bumps in one row provided substantially parallel to each side of the four peripheral portions on the surface, and arranged approximately in the center in two rows parallel to one side of the peripheral portion. an integrated circuit chip comprising a plurality of second connection bumps, and a plurality of shot prevention bumps provided on the outside of the first and second connection bumps; and a plurality of test electrodes on the surface thereof. an insulating film connected to an electrical conductor, and a center line of each of the second connection bumps in a direction perpendicular to the one side is located between the first connection bumps. semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61185531A JPS6341036A (en) | 1986-08-06 | 1986-08-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61185531A JPS6341036A (en) | 1986-08-06 | 1986-08-06 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6341036A JPS6341036A (en) | 1988-02-22 |
JPH0533532B2 true JPH0533532B2 (en) | 1993-05-19 |
Family
ID=16172430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61185531A Granted JPS6341036A (en) | 1986-08-06 | 1986-08-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6341036A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0943304A (en) * | 1995-07-26 | 1997-02-14 | Nec Corp | Semiconductor test device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2768336B2 (en) * | 1995-12-18 | 1998-06-25 | 日本電気株式会社 | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53123074A (en) * | 1977-04-01 | 1978-10-27 | Nec Corp | Semiconductor device |
JPS5512791A (en) * | 1978-07-14 | 1980-01-29 | Nec Corp | Semiconductor device |
-
1986
- 1986-08-06 JP JP61185531A patent/JPS6341036A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53123074A (en) * | 1977-04-01 | 1978-10-27 | Nec Corp | Semiconductor device |
JPS5512791A (en) * | 1978-07-14 | 1980-01-29 | Nec Corp | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0943304A (en) * | 1995-07-26 | 1997-02-14 | Nec Corp | Semiconductor test device |
Also Published As
Publication number | Publication date |
---|---|
JPS6341036A (en) | 1988-02-22 |
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