JPH05335215A - Reflecting mirror, its manufacture and stepper - Google Patents
Reflecting mirror, its manufacture and stepperInfo
- Publication number
- JPH05335215A JPH05335215A JP3040056A JP4005691A JPH05335215A JP H05335215 A JPH05335215 A JP H05335215A JP 3040056 A JP3040056 A JP 3040056A JP 4005691 A JP4005691 A JP 4005691A JP H05335215 A JPH05335215 A JP H05335215A
- Authority
- JP
- Japan
- Prior art keywords
- reflection mirror
- reflection
- layer
- smoothing layer
- smoothing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000009499 grossing Methods 0.000 claims abstract description 23
- 230000003746 surface roughness Effects 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 2
- 238000007348 radical reaction Methods 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
(57)【要約】
【構成】 軟Ｘ線用反射ミラ−を、所望の平面、球面も
しくは非球面を平均面とし、かつ一定の表面荒さを有す
る基体０と、上記表面上にＴＥＯＳ−ＣＶＤ法等を用い
て形成された平滑化層３と、上記平滑化層上に形成され
た多層膜とからなる反射膜５で構成した。
【効果】 反射ミラ−の表面荒さは１０Å程度又はそれ
以下となり、軟Ｘ線に対して非球面反射面を有する回折
限界光学系を実現することができる。
(57) [Summary] [Construction] A reflection mirror for soft X-rays is provided with a base 0 having a desired plane, spherical surface or aspherical surface as an average surface and having a constant surface roughness, and a TEOS-CVD method on the surface. And the like, and a reflective film 5 including a multilayer film formed on the smoothing layer. [Effect] The surface roughness of the reflection mirror is about 10Å or less, and a diffraction-limited optical system having an aspherical reflection surface for soft X-rays can be realized.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反射ミラ−、特に１０
Å程度の面精度又は表面荒さが要求される軟Ｘ線用反射
ミラ−、及びその作製方法並びに各種固体素子の微細パ
ターン形成に用いられる縮小投影露光装置に関する。BACKGROUND OF THE INVENTION The present invention relates to a reflective mirror, especially 10
The present invention relates to a reflection mirror for soft X-rays, which requires a surface accuracy or surface roughness of about Å, a manufacturing method thereof, and a reduction projection exposure apparatus used for forming fine patterns of various solid-state elements.
【０００２】[0002]
【従来の技術】近年、シンクロトロン放射光（ＳＲ光）
の実用化に伴い、軟Ｘ線用ミラ−及び光学系の開発が盛
んである。一方、ＬＳＩ等の固体素子の集積度及び動作
速度を向上するため、回路パタンの微細化が進んでい
る。現在これらの回路パタン形成には、量産性と解像性
能に優れた縮小投影露光法が広く用いられている。この
縮小投影露光法の解像度は、露光波長に比例し、投影光
学系の開口数（ＮＡ）に反比例する。従来、解像限界の
向上は開口数を大きくすること（高ＮＡ化）により行な
われてきた。しかし、この開口数を大きくする方法は、
焦点深度の減少とレンズ設計及び製造技術の困難から限
界に近づきつつある。このため、上述のＳＲ光等の軟Ｘ
線を用いて、露光光の波長を短くする方法が注目されて
いる。2. Description of the Related Art In recent years, synchrotron radiation (SR light)
The development of mirrors and optical systems for soft X-rays has been actively pursued with the commercialization of the above. On the other hand, in order to improve the degree of integration and the operating speed of solid-state elements such as LSI, circuit patterns are becoming finer. At present, the reduction projection exposure method, which is excellent in mass productivity and resolution performance, is widely used for forming these circuit patterns. The resolution of this reduction projection exposure method is proportional to the exposure wavelength and inversely proportional to the numerical aperture (NA) of the projection optical system. Conventionally, the resolution limit has been improved by increasing the numerical aperture (increasing the NA). However, the method of increasing this numerical aperture is
It is approaching the limit due to the decrease of the depth of focus and the difficulty of lens design and manufacturing technology. Therefore, the soft X such as the SR light described above
Attention has been paid to a method of shortening the wavelength of exposure light by using a line.
【０００３】リソグラフィ用短波長光源としてＦ2レ−
ザ等の真空紫外線、ＳＲ光等の軟Ｘ線を用いた場合、こ
れまで用いられてきた屈折光学系（レンズ）に適した材
料が得られないため、反射光学系を用いることになる。
露光光に１５０Å程度の軟Ｘ線、縮小投影レンズにＮＡ
＝０．１程度の回折限界反射型光学系を用いることによ
り、０．１μｍ程度のパタン形成が可能となる。真空紫
外線、ＳＲ光を用いた反射縮小投影露光法については、
例えば、電気学会研究会資料、ＥＤＤ−９０−４０、第
４７頁〜５４頁（１９９０年）に論じられている。An F 2 laser is used as a short wavelength light source for lithography.
When soft X-rays such as vacuum ultraviolet rays and SR light such as Z are used, materials suitable for the refraction optical system (lens) that have been used so far cannot be obtained, and therefore reflection optical systems are used.
About 150Å soft X-rays for exposure light, NA for reduction projection lens
By using a diffraction limited reflection type optical system of about 0.1, a pattern of about 0.1 μm can be formed. Regarding the reflection reduction projection exposure method using vacuum ultraviolet light and SR light,
For example, it is discussed in the Institute of Electrical Engineers of Japan material, EDD-90-40, pp. 47-54 (1990).
【０００４】[0004]
【発明が解決しようとする課題】十分な反射率を有する
回折限界反射型光学系を実現するためには、上記光学系
に用いる反射ミラ−の表面荒さを、各種収差を抑えるた
めに反射光の波長λに対して十分に小さく（例えばλ／
２０程度に）する必要がある。従って、露光光に１５０
Å程度の軟Ｘ線を用いるとすると、表面荒さは１０Å以
下であることが好ましい。一方、実用的な大きさの露光
領域を持つ光学系を実現するためには、上記反射ミラ−
は光学収差を抑制可能な非球面鏡であることが望まし
い。これらの非球面鏡は、一般に数値制御を用いた機械
的切削加工及び研磨によって作製される。この方法では
任意の非球面形状を持つ表面の加工が可能であるが、加
工面の表面荒さを１００Å以下にするのは一般に難し
い。従って、従来技術では、軟Ｘ線を用いた投影露光法
に使用可能な十分な露光面積と反射率を有する回折限界
反射型光学系を実現できないという問題があった。本発
明の目的は、上記問題を解決して、軟Ｘ線を用いた反射
縮小投影露光法等に最適な反射ミラ−を提供することに
ある。本発明の他の目的は、上記反射ミラ−の製造方法
を提供することにある。さらに、本発明の他の目的は、
上記反射ミラ−を用いて、０．１μｍ以下の加工を可能
とする縮小投影露光装置を提供することにある。In order to realize a diffraction-limited reflection type optical system having a sufficient reflectance, the surface roughness of the reflection mirror used in the above-mentioned optical system is set to Sufficiently small for the wavelength λ (eg λ /
20). Therefore, the exposure light
If soft X-rays of about Å are used, the surface roughness is preferably 10 Å or less. On the other hand, in order to realize an optical system having an exposure area of a practical size, the above reflection mirror is used.
Is preferably an aspherical mirror capable of suppressing optical aberration. These aspherical mirrors are generally manufactured by mechanical cutting and polishing using numerical control. This method can process a surface having an arbitrary aspherical shape, but it is generally difficult to reduce the surface roughness of the processed surface to 100 Å or less. Therefore, the conventional technique has a problem in that a diffraction-limited reflection type optical system having a sufficient exposure area and reflectance that can be used in a projection exposure method using soft X-rays cannot be realized. An object of the present invention is to solve the above problems and provide a reflection mirror optimal for a reflection reduction projection exposure method using soft X-rays. Another object of the present invention is to provide a method for manufacturing the above-mentioned reflection mirror. Furthermore, another object of the present invention is to
It is an object of the present invention to provide a reduction projection exposure apparatus capable of processing 0.1 μm or less by using the reflection mirror.
【０００５】[0005]
【課題を解決するための手段】上記目的は、反射ミラ−
を、所望の平面、球面もしくは非球面を平均面とし、か
つ一定の表面荒さを有する基体と、上記表面上に形成さ
れた少なくとも１種類以上の物質層からなる平滑化層
と、上記平滑化層上に形成された反射膜層とから構成す
ることによって達成される。又、上記目的は、上記平滑
化層表面を、表面原子、分子、ラジカルもしくは微粒子
のマイグレ−ションによって平滑化することによって達
成される。さらに、上記目的は、上記平滑化層を有機シ
リコン化合物を主原料とするＣＶＤ法、ダウンフロ−プ
ロセスによるラジカル反応を利用した凝縮ＣＶＤ、イオ
ンクラスタビ−ム蒸着法、珪フッ化水素酸水溶液中の液
相成長法、バイアススパッタ法、熱処理によるリフロ
−、スピンコ−ティング法、又はイオンビ−ムエッチン
グ等を用いて形成することにより、上記平滑化層又は反
射膜層の表面荒さを１０Å以下に抑えることによって達
成される。又、上記目的は、所望の球面もしくは非球面
形状を有する表面を機械的切削加工、研磨又はイオンビ
ーム加工した後、上記加工面上に、上記の各種方法によ
り形成した平滑化層を設け、さらに上記平滑化層の上に
多層膜等の反射膜を形成することによって達成される。The above object is to provide a reflection mirror.
A substrate having a desired flat surface, spherical surface or aspherical surface as an average surface and having a constant surface roughness, a smoothing layer composed of at least one or more substance layers formed on the surface, and the smoothing layer. It is achieved by comprising the reflective film layer formed above. The above object is achieved by smoothing the surface of the smoothing layer by migration of surface atoms, molecules, radicals or fine particles. Further, the above-mentioned objects are as follows: CVD method using an organic silicon compound as a main material for the smoothing layer; condensation CVD using radical reaction by down flow process; ion cluster beam vapor deposition method; By suppressing the surface roughness of the smoothing layer or the reflection film layer to 10 Å or less by forming it by liquid phase growth method, bias sputtering method, reflow by heat treatment, spin coating method, or ion beam etching. Achieved by Further, the above-mentioned object is to mechanically cut, polish or ion beam process a surface having a desired spherical surface or aspherical surface, and then provide a smoothing layer formed by the above-mentioned various methods on the processed surface, This is achieved by forming a reflective film such as a multilayer film on the smoothing layer.
【０００６】[0006]
【作用】図１は本発明による反射ミラ−の原理的構成を
示す模式図である。前述のように、反射ミラ−の基体０
の材料を機械的に非球面形状加工した場合、加工面２は
高さ２００〜５００Å程度の凹凸を有する。この場合、
凹凸を有する加工面の平均面１がほぼ正確な所望の非球
面となる。そこで、加工面２上に上記手段の項に述べた
方法により平滑化層３を形成し、上記凹凸を平滑化して
表面荒さを１０Å以下にすることによって、所望の非球
面４が得られる。さらに、非球面４上に多層膜等で構成
される反射膜５を形成することにより、所望の反射ミラ
−が得られる。FIG. 1 is a schematic diagram showing the principle structure of the reflection mirror according to the present invention. As described above, the reflective mirror substrate 0
When the above material is mechanically processed into an aspherical shape, the processed surface 2 has unevenness with a height of about 200 to 500Å. in this case,
The average surface 1 of the processed surface having unevenness becomes a substantially accurate desired aspherical surface. Therefore, the desired aspherical surface 4 is obtained by forming the smoothing layer 3 on the processed surface 2 by the method described in the above section and smoothing the unevenness so that the surface roughness becomes 10 Å or less. Further, by forming the reflection film 5 composed of a multilayer film or the like on the aspherical surface 4, a desired reflection mirror can be obtained.
【０００７】反射ミラ−の結像特性を決定するミラ−の
面精度には、上記表面荒さ（ミクロな面精度）に加えて
ミラ−の形状精度（マクロな面精度）が必要とされる。
加工面の平均面２の所望の非球面からの誤差に相当する
後者については、ある範囲内において形状モニタと形状
補正により所期の条件に調整することができる。なお、
上記平滑化層の表面が、堆積物粒子（原子、分子、ラジ
カルもしくは微粒子）のマイグレ−ションによって平滑
化される場合、その平均マイグレ−ション距離は、反射
率又は結像性能に悪影響を与える表面荒さ周期と同程度
もしくはこれより大きいことが好ましい。但し、形状精
度を維持するため、ミラ−の外形寸法よりは充分小さく
なければならない。上記平均マイグレ−ション距離は、
堆積物粒子の種類及び状態、基板の表面状態、基板温
度、基板表面への光照射等の各種条件により変化する。
従って、これらの条件の最適化が必要である。The surface accuracy of the mirror that determines the image forming characteristics of the reflection mirror requires the shape accuracy of the mirror (macro surface accuracy) in addition to the above surface roughness (micro surface accuracy).
The latter, which corresponds to the error from the desired aspherical surface of the average surface 2 of the processed surface, can be adjusted to a desired condition by a shape monitor and shape correction within a certain range. In addition,
When the surface of the smoothing layer is smoothed by migration of deposit particles (atoms, molecules, radicals or fine particles), the average migration distance of the surface adversely affects reflectance or imaging performance. It is preferable that the roughness period is equal to or larger than the roughness period. However, in order to maintain the shape accuracy, it must be sufficiently smaller than the outer dimensions of the mirror. The above average migration distance is
It changes depending on various conditions such as the kind and state of the deposit particles, the surface state of the substrate, the substrate temperature, and the light irradiation on the substrate surface.
Therefore, optimization of these conditions is necessary.
【０００８】[0008]
第１実施例 本発明による反射ミラ−の製造方法の一実施例を図２を
用いて説明する。まず、シリコンカ−バイド（ＳｉＣ）
基板０を非球面切削加工装置を用いて非球面加工を行な
った（図２．ａ）。加工後の表面荒さをタリステップを
用いて測定したところ、切削方向と直角な方向に対して
最大約２００Åであった。又、典型的な表面荒さの空間
周期は、切削加工装置のダイヤモンドバイトの送り量で
ある約５μｍであった。加工後、必要に応じて電界研磨
を行なった（図２．ｂ）。これにより、上記表面粗さの
空間周期は著しく小さくなったが、走査型電子顕微鏡Ｓ
ＴＭを用いて表面を観察すると、なお１００Å程度の表
面荒さが見られた。なお、電界研磨の代りに超音波研磨
を行なっても良い。又、加工面全面に、もしくは選択的
にイオンビーム・エッチングをほどこしてもよい。次
に、オゾン添加ＴＥＯＳ（テトラエチルオルソシリケイ
ト）を原料とする常圧ＣＶＤ（気相化学成長法）を用い
て、平滑化層３を形成した（図２．ｃ）。反応温度は３
８０℃とし、ホットウォ−ル型の反応室を用いた。反射
ミラ−全面で均一な堆積速度を得るために、反応室内の
温度均一性に十分な配慮を行なった。堆積したＳｉＯ2
膜３の表面荒さをタリステップ及びＳＴＭを用いて測定
したところ、ともに最大約１０Å以下に抑えられてい
た。しかる後に、上記ＳｉＯ2膜上に、 マグネトロン
スパッタ法を用いてＭｏ／Ｓｉ多層膜５を形成して、所
望の反射ミラ−を得た（図２．ｄ）。なお、非球面加工
を行なう基板、及び多層膜の材料は本実施例で用いたも
のに限らない。また、本実施例では、オゾン添加ＴＥＯ
Ｓを原料とする常圧ＣＶＤを用いたが、例えば酸素添加
ＴＥＯＳを原料とする減圧下の光アシストプラズマＣＶ
Ｄ等を用いてもよい。平滑化層３、多層膜５等の成膜前
処理として適当な表面洗浄を行うことが望ましい。First Embodiment An embodiment of the method for manufacturing a reflection mirror according to the present invention will be described with reference to FIG. First, silicon carbide (SiC)
The substrate 0 was subjected to aspherical surface processing using an aspherical surface cutting device (Fig. 2.a). When the surface roughness after processing was measured using a tarry step, the maximum was about 200Å in the direction perpendicular to the cutting direction. The typical surface roughness spatial period was about 5 μm, which is the feed amount of the diamond tool of the cutting apparatus. After processing, electropolishing was performed if necessary (Fig. 2.b). As a result, the spatial period of the surface roughness is significantly reduced, but the scanning electron microscope S
When the surface was observed using TM, surface roughness of about 100Å was still observed. Note that ultrasonic polishing may be performed instead of electric field polishing. Further, ion beam etching may be applied to the entire processed surface or selectively. Next, the smoothing layer 3 was formed using atmospheric pressure CVD (vapor phase chemical growth method) using ozone-added TEOS (tetraethyl orthosilicate) as a raw material (FIG. 2.c). Reaction temperature is 3
The temperature was set to 80 ° C. and a hot wall type reaction chamber was used. In order to obtain a uniform deposition rate on the entire surface of the reflection mirror, sufficient consideration was given to the temperature uniformity in the reaction chamber. Deposited SiO 2
When the surface roughness of the film 3 was measured by Taristep and STM, both were suppressed to a maximum of about 10 Å or less. Then, a Mo / Si multilayer film 5 was formed on the SiO 2 film by a magnetron sputtering method to obtain a desired reflection mirror (FIG. 2.d). The material for the aspherical surface processing substrate and the multilayer film is not limited to those used in this embodiment. In addition, in this embodiment, ozone-added TEO is used.
Although atmospheric pressure CVD using S as a raw material was used, for example, an optically assisted plasma CV under reduced pressure using oxygen-added TEOS as a raw material.
You may use D etc. Appropriate surface cleaning is preferably performed as a pretreatment for forming the smoothing layer 3, the multilayer film 5 and the like.
【０００９】第２実施例 第１実施例の図２．ａの工程と同様にして作成したＳｉ
Ｃの基体の加工面上に、ＣＶＤ法を用いてポリシリコン
を堆積し、ポリシリコン膜形成した。しかる後、ＣＦ4
と過剰Ｏ2の混合ガスを用いてダウンフロ−エッチング
を行なった。これにより、上記ポリシリコン膜表面に第
１実施例と同様平坦性に優れたＳｉＯ2膜が形成され
た。上記ＳｉＯ2膜上に、第１実施例と同様マグネトロ
ンスパッタ法を用いて多層膜を形成して、所望の反射ミ
ラ−を得た。Second Embodiment FIG. 2 of the first embodiment. Si produced in the same manner as the step a
Polysilicon was deposited by the CVD method on the processed surface of the C substrate to form a polysilicon film. After that, CF 4
Down-flow etching was performed using a mixed gas of oxygen and excess O 2 . As a result, a SiO 2 film having excellent flatness was formed on the surface of the polysilicon film as in the first embodiment. A multilayer film was formed on the SiO 2 film by the magnetron sputtering method as in the first embodiment to obtain a desired reflection mirror.
【００１０】第３実施例 第１実施例の図２(ａ)の工程と同様にして作成したＳｉ
Ｃの基体加工面上に、マルチビ−ムイオンクラスタビ−
ム蒸着法を用いて、金（Ａｕ）薄膜を一様に形成した。
本方法は、２次元的に配列されたイオン源から発射され
た複数本のクラスタイオンビ−ムを基板上の異なる位置
に入射させることにより、広い面積にわたって膜形成を
行なうものである。これにより第１実施例と同様の効果
を得た。本実施例の金薄膜は、第１実施例又は第２実施
例等他の方法で形成した平坦化層の上に形成してもよ
い。これによりさらに平坦性のすぐれた面が得られる。
又、逆に本実施例の金薄膜の上に、第１実施例又は第２
実施例等他の方法を用いて平坦化層を形成してもよい。
なお、蒸着物質は金に限らない。入射ビ−ムに対して蒸
着面を適当に走査することによっても、平坦度はさらに
向上した。なお、表面形状測定の結果、表面が周辺より
低くなっていて所望の非球面からずれている凹領域があ
った場合、上記領域に入射するビ−ムのみを用いて選択
的に蒸着を行なうことにより、表面を所望の形状に近付
けることができる。又、凸領域の場合には、上記凸領域
だけを避けるようにして蒸着することにより同様の効果
が得られる。Third Embodiment Si prepared in the same manner as the step of FIG. 2A of the first embodiment.
Multibeam ion cluster beam on the surface of C substrate
A gold (Au) thin film was uniformly formed using the vapor deposition method.
In this method, a plurality of cluster ion beams emitted from ion sources arranged two-dimensionally are made incident on different positions on a substrate to form a film over a large area. As a result, the same effect as that of the first embodiment was obtained. The gold thin film of this embodiment may be formed on the flattening layer formed by another method such as the first embodiment or the second embodiment. As a result, a surface having even better flatness can be obtained.
On the contrary, on the gold thin film of this embodiment, the first embodiment or the second
The planarization layer may be formed by using another method such as the embodiment.
The vapor deposition material is not limited to gold. The flatness was further improved by appropriately scanning the deposition surface with respect to the incident beam. If the surface shape measurement shows that the surface is lower than the surrounding area and there is a concave area that is deviated from the desired aspherical surface, selective vapor deposition is performed using only the beam incident on the area. This makes it possible to bring the surface close to a desired shape. Further, in the case of a convex region, the same effect can be obtained by performing vapor deposition while avoiding only the convex region.
【００１１】第４実施例 第１実施例の図２(ａ)の工程と同様にして作成したＳｉ
Ｃの基体を、ＳｉＯ2の飽和フッ化水素酸（ＨＦ）水溶
液中に浸積し、これに硼酸（ＨＢＯ2）を加えることに
よって、表面に平坦なＳｉＯ2層を形成した。基体０の
材料は、本実施例に示したものに限らないが、上記ＨＦ
水溶液に溶けないものであることが望ましい。なお、上
記基体上に適当な物質をコ−ティングすることによりＨ
Ｆ水溶液に対する耐溶解性を向上させる等してもよい。
この方法によって、最大１５Åの表面荒さが達成され
た。上記、平坦化層上に第１実施例と同じ方法により反
射多層膜を形成して、所望の反射ミラ−を得た。Fourth Embodiment Si produced in the same manner as the step of FIG. 2A of the first embodiment.
The C substrate was immersed in a saturated aqueous solution of hydrofluoric acid (HF) of SiO 2 , and boric acid (HBO 2 ) was added thereto to form a flat SiO 2 layer on the surface. The material of the base body 0 is not limited to the material shown in this embodiment, but the HF
It is desirable that it is not soluble in an aqueous solution. By coating an appropriate substance on the above substrate, H
You may improve dissolution resistance with respect to F aqueous solution.
By this method, a maximum surface roughness of 15Å was achieved. A reflective multilayer film was formed on the flattening layer by the same method as in Example 1 to obtain a desired reflective mirror.
【００１２】第５実施例 図３は上記第１実施例の方法を用いて作成した反射ミラ
−を用いた反射型縮小投影露光装置の反射縮小投影光学
系（縮小率５分の１）示す。ＳＲ光１０（波長１５０
Å）を用いて、反射型マスク１１上に形成されたパタン
を反射ミラ−１２、１３、１４より構成された反射縮小
投影光学系により基板上１５のレジスト（ＰＭＭＡ）に
転写した。これにより、マスク上０．５μｍのパタンに
対して寸法０．１μｍのレジストパタンが正確に得られ
た。縮小率、波長等は、本実施例の値に限らない。レジ
ストについても同様である。反射ミラ−１２、１３、１
４は第１実施例の方法を用いて作成したが、形状精度、
表面荒さがおよそ１０Å以下であれば、いかなる方法を
用いて作成してもかまわない。さらに、光学系の構成も
図３に示したものに限らない。Fifth Embodiment FIG. 3 shows a reflection reduction projection optical system (reduction ratio ⅕) of a reflection type reduction projection exposure apparatus using a reflection mirror produced by the method of the first embodiment. SR light 10 (wavelength 150
The pattern formed on the reflection-type mask 11 was transferred to the resist (PMMA) on the substrate 15 by using the reflection reduction projection optical system composed of the reflection mirrors 12, 13, and 14 by using Å). As a result, a resist pattern having a dimension of 0.1 μm was accurately obtained with respect to a pattern of 0.5 μm on the mask. The reduction ratio, the wavelength, etc. are not limited to the values in this embodiment. The same applies to the resist. Reflection mirror-12, 13, 1
No. 4 was created by using the method of the first embodiment, shape accuracy,
Any method may be used as long as the surface roughness is about 10 Å or less. Furthermore, the configuration of the optical system is not limited to that shown in FIG.
【００１３】[0013]
【発明の効果】以上、本発明の反射ミラ−によれば、反
射ミラ−を、所望の平面、球面もしくは非球面を平均面
としかつ一定の表面荒さを有する基体と、上記表面上に
形成された少なくとも１種類以上の物質層からなる平滑
化層と、上記平滑化層上に形成された反射膜層とから構
成することにより、その表面荒さを１０Å程度又はそれ
以下とし、十分な反射率を有する軟Ｘ線用回折限界光学
系を実現することができる。これにより、縮小投影露光
法の適用範囲を０．１μｍ程度にまで拡大することが可
能となる。As described above, according to the reflection mirror of the present invention, the reflection mirror is formed on the above-mentioned surface with a base having a desired plane, spherical surface or aspherical surface as an average surface and having a constant surface roughness. By including a smoothing layer composed of at least one kind of material layer and a reflective film layer formed on the smoothing layer, the surface roughness thereof is set to about 10 Å or less, and a sufficient reflectance is obtained. It is possible to realize the diffraction-limited optical system for soft X-rays. As a result, the applicable range of the reduced projection exposure method can be expanded to about 0.1 μm.
【図１】本発明による反射ミラ−の原理的構成を示す模
式図である。FIG. 1 is a schematic diagram showing a principle configuration of a reflection mirror according to the present invention.
【図２】本発明による反射ミラ−の製造工程の一実施例
を示す工程図である。FIG. 2 is a process drawing showing an example of a manufacturing process of a reflective mirror according to the present invention.
【図３】本発明の一実施例である縮小投影露光装置の要
部構成を示す図である。FIG. 3 is a diagram showing a main configuration of a reduction projection exposure apparatus that is an embodiment of the present invention.
０‥基体、 １‥加工面の平均面、 ２‥加工面、 ３‥平滑化層、 ４‥非球面、 ５‥反射膜、 １０‥ＳＲ光、 １１‥反射型マスク、 １２、１３、１４‥反射ミラ−、 １５‥基板。 0 ... Substrate, 1 ... Average surface of processed surface, 2 ... Processed surface, 3 ... Smoothing layer, 4 ... Aspherical surface, 5 ... Reflective film, 10 ... SR light, 11 ... Reflective mask, 12, 13, 14 ... Reflective mirror, 15 ... Substrate.
Claims (9)
面とし、かつ一定の表面荒さを有する基体と、上記表面
上に形成された少なくとも１種類以上の物質層からなる
平滑化層と、上記平滑化層上に形成された反射膜層を有
してなることを特徴とする反射ミラ−。1. A substrate having a desired flat surface, a spherical surface or an aspherical surface as an average surface and having a constant surface roughness, a smoothing layer formed on the surface and comprising at least one or more kinds of substance layers, A reflection mirror comprising a reflection film layer formed on a smoothing layer.
とする請求項１記載の反射ミラ−。2. The reflection mirror according to claim 1, wherein the reflection film layer is a multilayer film.
が１０Å以下であることを特徴とする請求項１記載の反
射ミラ−。3. The reflection mirror according to claim 1, wherein the surface roughness of the smoothing layer or the reflection film layer is 10 Å or less.
面もしくは非球面形状を有する表面に加工する第１工程
と、上記第１工程で加工された上記基体材料の加工面上
に平滑化層を形成する第２工程と、上記平滑化層の表面
上に反射膜を形成する第３工程を含むことを特徴とする
反射ミラ−の製造方法。4. A first step of processing a substrate material of a reflection mirror into a surface having a desired flat surface, spherical surface or aspherical surface, and smoothing on the processed surface of the substrate material processed in the first step. A method for producing a reflective mirror, comprising: a second step of forming a layer; and a third step of forming a reflective film on the surface of the smoothing layer.
研磨又はイオンビ−ムエッチングによって行われること
を特徴とする請求項４記載の反射ミラ−の製造方法。5. The method of manufacturing a reflection mirror according to claim 4, wherein the first step is performed by mechanical cutting and surface polishing or ion beam etching.
子、分子、ラジカルもしくは微粒子をマイグレ−ション
させる過程によって行われることを特徴とする請求項４
記載の反射ミラ−の製造方法。6. The method according to claim 4, wherein the second step is performed by a process of migrating atoms, molecules, radicals or fine particles to the surface of the smoothing layer.
A method for producing the described reflection mirror.
おいて、上記第２工程は、熱処理によるリフロ−、又は
イオンビーム・エッチングにより平滑化された膜層を作
る工程を含むことを特徴とする反射ミラ−の製造方法。7. The method of manufacturing a reflection mirror according to claim 4, wherein the second step includes a step of forming a smoothed film layer by reflow by heat treatment or ion beam etching. A method for producing a reflective mirror.
主原料とするＣＶＤ法、ダウンフロ−プロセスによるラ
ジカル反応を利用した凝縮ＣＶＤ、イオンクラスタビ−
ム蒸着法、珪フッ化水素酸水溶液中の液相成長法、バイ
アススパッタ法、スピンコ−ティング法、熱処理による
リフロ−、又はイオンビ−ムエッチングのいずれかによ
り行われることを特徴とする請求項４記載の反射ミラ−
の製造方法。8. The second step is a CVD method using an organic silicon compound as a main raw material, a condensed CVD method utilizing a radical reaction by a down flow process, and an ion cluster beam.
5. A vapor deposition method, a liquid phase growth method in an aqueous solution of hydrofluoric silicic acid, a bias sputtering method, a spin coating method, a reflow by heat treatment, or an ion beam etching. Reflective mirror described
Manufacturing method.
ラ−を反射縮小投影光学系として用いたことを特徴とす
る縮小投影露光装置。9. A reduction projection exposure apparatus using the reflection mirror according to claim 1 as a reflection reduction projection optical system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3040056A JPH05335215A (en) | 1991-03-06 | 1991-03-06 | Reflecting mirror, its manufacture and stepper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3040056A JPH05335215A (en) | 1991-03-06 | 1991-03-06 | Reflecting mirror, its manufacture and stepper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05335215A true JPH05335215A (en) | 1993-12-17 |
Family
ID=12570266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3040056A Pending JPH05335215A (en) | 1991-03-06 | 1991-03-06 | Reflecting mirror, its manufacture and stepper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05335215A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016519780A (en) * | 2013-03-14 | 2016-07-07 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ultra-smooth layer ultraviolet lithography mirror and blank, and manufacturing and lithography system therefor |
| US10209613B2 (en) | 2013-03-12 | 2019-02-19 | Applied Materials, Inc. | System and method for manufacturing planarized extreme ultraviolet lithography blank |
| US10788744B2 (en) | 2013-03-12 | 2020-09-29 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
-
1991
- 1991-03-06 JP JP3040056A patent/JPH05335215A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10209613B2 (en) | 2013-03-12 | 2019-02-19 | Applied Materials, Inc. | System and method for manufacturing planarized extreme ultraviolet lithography blank |
| US10788744B2 (en) | 2013-03-12 | 2020-09-29 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| JP2016519780A (en) * | 2013-03-14 | 2016-07-07 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ultra-smooth layer ultraviolet lithography mirror and blank, and manufacturing and lithography system therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI836072B (en) | Extreme ultraviolet mask with embedded absorber layer | |
| US7282305B2 (en) | Reflective mask blank having a programmed defect and method of producing the same, reflective mask having a programmed defect and method of producing the same, and substrate for use in producing the reflective mask blank or the reflective mask having a programmed defect | |
| JP2004246366A (en) | Photomask blank, photomask, method and apparatus for manufacturing photomask blank | |
| KR102647715B1 (en) | TA-CU alloy material for extreme ultraviolet ray mask absorber | |
| US4941942A (en) | Method of manufacturing a mask support of sic for x-ray lithography masks | |
| JPH06138638A (en) | Mask and manufacture thereof | |
| TW202034062A (en) | Extreme ultraviolet mask absorber materials | |
| TW201529506A (en) | Glass ceramic for ultraviolet lithography and method of manufacturing thereof | |
| TW202215145A (en) | Extreme ultraviolet mask absorber materials | |
| CN115461682A (en) | Extreme ultraviolet mask absorber material | |
| JP2023511124A (en) | Extreme UV mask blank hard mask material | |
| TW202033828A (en) | Extreme ultraviolet mask absorber materials | |
| KR20210143937A (en) | Graded interfaces of Bragg reflectors | |
| CN113138528A (en) | Extreme ultraviolet mask and method for manufacturing the same | |
| CN115427888A (en) | EUV Mask Absorber Materials | |
| JP7288959B2 (en) | Extreme UV mask with backside coating | |
| JPH0590137A (en) | Exposure mask | |
| JPH10275773A (en) | Film mask for lithography by short-wavelength radiation | |
| JPH0868897A (en) | Reflection mirror and its production method | |
| JPH05335215A (en) | Reflecting mirror, its manufacture and stepper | |
| JP7295260B2 (en) | Extreme UV mask blank with multilayer absorber and manufacturing method | |
| TWI836207B (en) | Extreme ultraviolet mask absorber materials | |
| TW202303267A (en) | Multilayer extreme ultraviolet reflectors | |
| JPH09326347A (en) | Fine pattern transfer method and apparatus | |
| JPH10300912A (en) | Substrate for diffraction grating |