JPH05334628A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPH05334628A JPH05334628A JP4165395A JP16539592A JPH05334628A JP H05334628 A JPH05334628 A JP H05334628A JP 4165395 A JP4165395 A JP 4165395A JP 16539592 A JP16539592 A JP 16539592A JP H05334628 A JPH05334628 A JP H05334628A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- magnetic shield
- shield film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
Landscapes
- Magnetic Heads (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜磁気ヘッドに関
し、更に詳しくは、磁気抵抗効果素子（以下ＭＲ素子と
称する）を読み出し素子とし、誘導型磁気変換素子を書
き込み素子として用いた薄膜磁気ヘッドの改良に係わ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head, and more particularly to a thin film magnetic head using a magnetoresistive effect element (hereinafter referred to as an MR element) as a read element and an inductive magnetic conversion element as a write element. Related to the improvement of.
【０００２】[0002]
【従来の技術】従来、薄膜磁気ヘッドとしては、誘導型
薄膜磁気変換素子を読み書き素子として使用したものが
最もよく知られている。誘導型薄膜磁気変換素子を用い
た薄膜磁気ヘッドにおいて、高い読み出し出力を得るに
は、磁気ディスクと磁気ヘッドとの間の相対速度を上げ
るか、または、コイルのターン数を増大させる必要があ
る。しかし、磁気ディスクが小型化される傾向にあるた
め、相対速度の高速化による読み出し出力の増大は実情
に合わない。また、コイルのターン数増大による読み出
し出力は、コイルのインダクタンス及び直流抵抗値の増
大を招き、高周波特性を悪化させ、高速読み出しに適応
できなくなる。かかる問題点を解決する手段として、読
み出し素子をＭＲ素子によって構成し、誘導型薄膜磁気
変換素子は書込み専用として用いるようにした技術が提
案されている。公知技術文献としては、例えば特公昭５
９−３５０８８号公報、特公昭６４ー１８４６号公報等
がある。2. Description of the Related Art Conventionally, as a thin film magnetic head, a thin film magnetic head using an inductive thin film magnetic conversion element as a read / write element is best known. In a thin film magnetic head using an inductive thin film magnetic conversion element, it is necessary to increase the relative speed between the magnetic disk and the magnetic head or increase the number of coil turns in order to obtain a high read output. However, since the magnetic disk tends to be miniaturized, the increase in read output due to the increase in relative speed is not suitable for the actual situation. In addition, the read output due to the increase in the number of turns of the coil increases the inductance and the DC resistance of the coil, deteriorates the high frequency characteristics, and cannot be adapted to high speed reading. As a means for solving such a problem, a technique has been proposed in which the read element is composed of an MR element and the inductive type thin film magnetic conversion element is used only for writing. As a known technical document, for example, Japanese Patent Publication No. 5
9-35088 and Japanese Patent Publication No. 64-1846.
【０００３】これらの公知文献に示された薄膜磁気ヘッ
ドは、読み出し素子の上に書き込み素子を積層した構造
となっている。読み出し素子は、下部磁気シールド膜
と、上部磁気シールド膜と、ＭＲ素子とを含み、下部磁
気シールド膜及び上部磁気シールド膜が間隔を隔てて対
向して配置され、ＭＲ素子が下部磁気シールド膜と上部
磁気シールド膜との間の電気絶縁層中に配置されてい
る。下部磁気シールド膜及び上部磁気シールド膜は、読
み出し動作時にＭＲ素子が外部磁界の影響、特に、現在
読み出している磁化反転遷移領域とは異なる他の磁化反
転遷移領域から生じる磁界の影響を受けるのを遮断する
ために設けられたもので、その全面にわってほぼ均一な
膜厚を有しており、膜表面が平坦な平面を構成してい
る。書き込み素子は、読み出し素子を構成する上部磁気
シールド膜の平坦な上面に、絶縁膜を介して積層して設
けられる。The thin film magnetic heads disclosed in these known documents have a structure in which a write element is laminated on a read element. The read element includes a lower magnetic shield film, an upper magnetic shield film, and an MR element, the lower magnetic shield film and the upper magnetic shield film are arranged to face each other with a gap, and the MR element and the lower magnetic shield film are arranged. It is arranged in the electrical insulation layer between the upper magnetic shield film. The lower magnetic shield film and the upper magnetic shield film are affected by an external magnetic field of the MR element during a read operation, particularly, a magnetic field generated from another magnetization reversal transition region different from the magnetization reversal transition region currently being read. It is provided for blocking, has a substantially uniform film thickness over the entire surface, and the film surface constitutes a flat plane. The write element is provided on the flat upper surface of the upper magnetic shield film forming the read element with an insulating film interposed therebetween.
【０００４】[0004]
【発明が解決しようとする課題】この種の薄膜磁気ヘッ
ドは、書き込み時に位置決め装置によって書き込みトラ
ックを指定し、指定され所定トラック上にデータを磁気
記録し、読み出し時に同じ位置決め装置によって読み出
しトラックを指定し、指定された所定トラックから磁気
記録を読み出すように動作するから、書き込み素子と、
読み出し素子であるＭＲ素子との間に、トラック幅方向
の位置ずれを生じないことが理想である。In this type of thin film magnetic head, a writing track is designated by a positioning device at the time of writing, data is magnetically recorded on a designated predetermined track, and a reading track is designated by the same positioning device at the time of reading. Then, since it operates to read the magnetic recording from the designated predetermined track, the write element,
Ideally, no positional deviation in the track width direction occurs between the MR element as a read element and the MR element.
【０００５】ところが、従来のこの種の薄膜磁気ヘッド
は、ＭＲ素子に備えられた上部磁気シールド膜が、全面
にわってほぼ均一な膜厚を有し、その上に、絶縁膜を介
して書き込み素子を積層してあるので、ＭＲ素子と書き
込み素子との間の間隔を、上部磁気シールド膜の厚み
と、絶縁膜との和によって定まる寸法以下には小さくで
きない。絶縁膜は要求される電気絶縁を確保するため
に、ある厚みを確保する必要があり、また、上部磁気シ
ールド膜は他の磁化反転遷移領域から生じる磁界の影響
を受けるのを遮断するために必要な膜厚以下には薄くで
きない。However, in the conventional thin film magnetic head of this type, the upper magnetic shield film provided in the MR element has a substantially uniform film thickness over the entire surface, and the write is performed via the insulating film on the upper magnetic shield film. Since the elements are stacked, the distance between the MR element and the write element cannot be reduced to a size smaller than the dimension determined by the sum of the thickness of the upper magnetic shield film and the insulating film. The insulating film must have a certain thickness to ensure the required electrical insulation, and the upper magnetic shield film must be shielded from being affected by the magnetic field generated from other magnetization reversal transition regions. It cannot be made thinner than this thickness.
【０００６】上述のＭＲ素子と書き込み素子との間に生
じる間隔のため、特に、スイングアーム式位置決め装置
を用いた場合、ＭＲ素子と書き込み素子との間で、トラ
ック幅方向の位置ずれを生じてしまうという問題点があ
った。上述した公知文献には、このような問題を解決す
る手段は開示されていない。Due to the above-described gap between the MR element and the write element, a position shift in the track width direction occurs between the MR element and the write element, especially when a swing arm type positioning device is used. There was a problem that it would end up. The above-mentioned publicly known documents do not disclose means for solving such a problem.
【０００７】そこで、本発明の課題は上述する問題点を
解決し、読み出し素子及び書き込み素子の間のトラック
幅方向の位置ずれを縮小し得る薄膜磁気ヘッドを提供す
ることである。Therefore, an object of the present invention is to solve the above-mentioned problems and to provide a thin film magnetic head capable of reducing the positional deviation between the read element and the write element in the track width direction.
【０００８】[0008]
【課題を解決するための手段】上述した課題解決のた
め、本発明は、スライダと、読み出し素子と、書き込み
素子とを有する薄膜磁気ヘッドであって、前記読み出し
素子は、下部磁気シールド膜と、上部磁気シールド膜
と、磁気抵抗効果素子とを含み、前記スライダ上に設け
られ、前記下部磁気シールド膜及び前記上部磁気シール
ド膜が間隔を隔てて対向して配置され、前記上部磁気シ
ールド膜が上面側に凹部を有し、磁気抵抗効果素子が前
記下部磁気シールド膜と前記上部磁気シールド膜との間
に配置されており、前記書き込み素子は、磁性膜及びコ
イルを有する誘導型磁気変換素子であって、前記磁性膜
の大部分が前記凹部の上方に位置するように、前記読み
出し素子の上に積層して設けられている。To solve the above problems, the present invention is a thin film magnetic head having a slider, a read element, and a write element, wherein the read element comprises a lower magnetic shield film, An upper magnetic shield film and a magnetoresistive effect element are provided, the upper magnetic shield film is provided on the slider, the lower magnetic shield film and the upper magnetic shield film are arranged to face each other with a gap, and the upper magnetic shield film is an upper surface. A magnetoresistive effect element is provided between the lower magnetic shield film and the upper magnetic shield film, and the write element is an inductive magnetic conversion element having a magnetic film and a coil. The magnetic film is laminated on the read element so that most of the magnetic film is located above the recess.
【０００９】[0009]
【作用】読み出し素子は、ＭＲ素子を含んでいるから、
誘導型素子の場合の異なって、高周波特性を悪化させず
に、高速で読み出すことができる。書き込み素子は、磁
性膜及びコイルを有する誘導型磁気変換素子であるか
ら、高い書き込み能力を確保できる。Since the read element includes the MR element,
Unlike the case of the inductive element, high-speed reading can be performed without deteriorating the high frequency characteristics. Since the writing element is an induction type magnetic conversion element having a magnetic film and a coil, high writing ability can be secured.
【００１０】下部磁気シールド膜及び上部磁気シールド
膜は、間隔を隔てて対向して配置されており、ＭＲ素子
は下部磁気シールド膜と上部磁気シールド膜との間に配
置されているから、ＭＲ素子が、その読み出し動作時
に、外部磁界の影響、特に、他の磁化反転遷移領域から
生じる磁界の影響を受けるのを遮断できる。The lower magnetic shield film and the upper magnetic shield film are arranged to face each other with a space therebetween, and the MR element is arranged between the lower magnetic shield film and the upper magnetic shield film. However, during the read operation, it is possible to block the influence of the external magnetic field, particularly, the influence of the magnetic field generated from the other magnetization switching region.
【００１１】上部磁気シールド膜は表面に凹部を有して
おり、書き込み素子は磁性膜の大部分が凹部の上方に位
置するように、ＭＲ素子の上に積層して設けられている
から、凹部の深さ分だけ、書き込み素子とＭＲ素子との
間の間隔が縮小する。このため、書き込み素子とＭＲ素
子との間のトラック幅方向のずれが縮小し、書き込み素
子によって書き込まれた磁気記録を、ＭＲ素子によって
確実に読み出すことができるようになる。The upper magnetic shield film has a concave portion on the surface, and the write element is laminated on the MR element so that most of the magnetic film is located above the concave portion. The distance between the write element and the MR element is reduced by the depth of. Therefore, the shift in the track width direction between the write element and the MR element is reduced, and the magnetic recording written by the write element can be reliably read by the MR element.
【００１２】上部磁気シールド膜は凹部の外側が厚い膜
厚を保っているから、凹部の部分で膜厚が薄くなってい
るにも拘らず、凹部の外側の厚い膜厚部分で、ＭＲ素子
が外部磁界の影響、特に、他の磁化反転遷移領域から生
じる磁界の影響を受けるのを確実に遮断し得る。Since the upper magnetic shield film keeps a thick film thickness outside the concave portion, the MR element is not formed in the thick film thickness portion outside the concave portion although the film thickness is thin in the concave portion. The influence of an external magnetic field, in particular, the influence of a magnetic field generated from another magnetization reversal transition region can be reliably blocked.
【００１３】[0013]
【実施例】図１は本発明に係る薄膜磁気ヘッドの断面
図、図２は読み出し素子部分の拡大斜視図、図３は本発
明に係る薄膜磁気ヘッドの磁極配置を示す拡大図であ
る。１はスライダ、２は読み出し素子、３は書き込み素
子である。1 is a sectional view of a thin film magnetic head according to the present invention, FIG. 2 is an enlarged perspective view of a read element portion, and FIG. 3 is an enlarged view showing a magnetic pole arrangement of the thin film magnetic head according to the present invention. Reference numeral 1 is a slider, 2 is a read element, and 3 is a write element.
【００１４】スライダ１はセラミック構造体でなる基体
部分１０を有し、媒体対向面側が高度の平面度を有する
空気ベアリング面１０１となっている。ａは媒体の走行
方向を示す。The slider 1 has a base portion 10 made of a ceramic structure, and the medium facing surface side is an air bearing surface 101 having a high degree of flatness. a indicates the traveling direction of the medium.
【００１５】読み出し素子２は、下部磁気シールド膜２
１と、上部磁気シールド膜２２と、ＭＲ素子２３とを含
み、スライダ１の上に設けられている。下部磁気シール
ド膜２１は基体部分１０の上にほぼ均一な膜厚となるよ
うに形成され、上部磁気シールド膜２２は下部磁気シー
ルド膜２１から電気絶縁層１１の膜厚による間隔を隔て
て積層されている。これらの磁気シールド膜２１、２２
は例えばパーマロイなどの磁性膜によって構成されてい
る。上部磁気シールド膜２２は上面側に深さ△ｈの凹部
２２０を有する。凹部２２０の平面形状は、書き込み素
子３の下部磁性膜３１の平面形状よりも少し大きい形状
に選定する。The read element 2 includes the lower magnetic shield film 2
1, the upper magnetic shield film 22, and the MR element 23 are provided on the slider 1. The lower magnetic shield film 21 is formed on the base portion 10 so as to have a substantially uniform film thickness, and the upper magnetic shield film 22 is laminated from the lower magnetic shield film 21 at a distance corresponding to the film thickness of the electrical insulating layer 11. ing. These magnetic shield films 21, 22
Is composed of a magnetic film such as permalloy. The upper magnetic shield film 22 has a recess 220 having a depth Δh on the upper surface side. The planar shape of the recess 220 is selected to be slightly larger than the planar shape of the lower magnetic film 31 of the writing element 3.
【００１６】ＭＲ素子２３は、下部磁気シールド膜２１
と上部磁気シールド膜２２との間の電気絶縁膜１１の内
部に埋設されている。ＭＲ素子２３はＮｉ−Ｆｅ、Ｎｉ
−Ｃｏ等の強磁性薄膜材料を用いた薄膜であり、図２に
図示するように、導体膜２４ー２５間に配置されてい
る。導体膜２４、２５は間隔を隔ててほぼ平行に横並び
に配置され、空気ベアリング面１０１側に位置する間隔
がトラック幅を規定している。電気絶縁膜１１はＡｌ2
Ｏ3またはＳｉＯ2等によって構成されている。The MR element 23 has a lower magnetic shield film 21.
It is buried inside the electric insulating film 11 between the upper magnetic shield film 22 and the upper magnetic shield film 22. The MR element 23 is Ni-Fe, Ni
It is a thin film using a ferromagnetic thin film material such as -Co and is arranged between the conductor films 24 to 25 as shown in FIG. The conductor films 24 and 25 are arranged side by side substantially parallel to each other with a space therebetween, and the space located on the air bearing surface 101 side defines the track width. The electric insulating film 11 is Al 2
It is composed of O 3 or SiO 2 .
【００１７】書き込み素子３は、下部磁性膜３１、上部
磁性膜３２、コイル膜３３、アルミナ等でなるギャップ
膜３４、ノボラック樹脂等の有機樹脂で構成された絶縁
膜３５及び保護膜３６などを有して、読み出し素子２の
上に積層されている。書き込み素子３は、下部磁性膜３
１の全体が読み出し素子２を構成する上部磁気シールド
膜２２の凹部２２０の平面内に位置するよに積層する。
１２はＡｌ2Ｏ3またはＳｉＯ2等の電気絶縁膜であり、
書き込み素子３はこの電気絶縁膜１２の上に積層されて
いる。The writing element 3 has a lower magnetic film 31, an upper magnetic film 32, a coil film 33, a gap film 34 made of alumina or the like, an insulating film 35 made of an organic resin such as novolac resin, and a protective film 36. Then, it is stacked on the read element 2. The writing element 3 includes the lower magnetic film 3
1 is laminated so that the whole of 1 is located in the plane of the recess 220 of the upper magnetic shield film 22 constituting the read element 2.
12 is an electrical insulating film such as Al 2 O 3 or SiO 2 ,
The writing element 3 is laminated on the electric insulating film 12.
【００１８】下部磁性膜３１及び上部磁性膜３２の先端
部は微小厚みのギャップ膜３４を隔てて対向するポール
部Ｐ１、Ｐ２となっており、ポール部Ｐ１、Ｐ２におい
て書き込みを行なう。下部磁性膜３１及び上部磁性膜３
２のヨーク部であり、ポール部Ｐ１、Ｐ２とは反対側に
あるバックギャップ部において、磁気回路を完成するよ
うに互いに結合されている。絶縁膜３５の上に、ヨーク
部の結合部のまわりを渦巻状にまわるように、コイル膜
３３を形成してある読み出し動作において、導体膜２
４、２５を通してＭＲ素子２３にセンス電流を流すと共
に、磁気ディスク（図示しない）の磁界の変化を、ＭＲ
素子２３の電気抵抗値の変化として検出する。ＭＲ素子
２３には、導体膜２４、２５を通してセンス電流を流す
他、入力磁界に対して直線性のよい検出信号を得るた
め、バイアス磁界が加えられる。バイアス磁界を発生す
る手段として、ＭＲ素子２３に直接にバイアス導体膜を
成膜し、バイアス導体膜に流す電流による発生磁界を利
用してバイアスを加えるシャントバイアス方式、ＭＲ素
子２３に近接して薄膜永久磁石を配置し、薄膜永久磁石
の発生磁界を利用するマグネットバイアス方式等が知ら
れている。そして、磁気ディスクの磁界の変化を、ＭＲ
素子２３の電気抵抗値の変化として検出する。The tip portions of the lower magnetic film 31 and the upper magnetic film 32 are pole portions P1 and P2 which face each other with a gap film 34 having a very small thickness therebetween, and writing is performed in the pole portions P1 and P2. Lower magnetic film 31 and upper magnetic film 3
The second yoke portion is a back gap portion on the side opposite to the pole portions P1 and P2 and is coupled to each other so as to complete a magnetic circuit. In the read operation in which the coil film 33 is formed on the insulating film 35 so as to spiral around the coupling part of the yoke part, the conductive film 2
A sense current is caused to flow through the MR element 23 through Nos. 4 and 25, and changes in the magnetic field of the magnetic disk (not shown) are
It is detected as a change in the electric resistance value of the element 23. A bias magnetic field is applied to the MR element 23 in order to pass a sense current through the conductor films 24 and 25 and to obtain a detection signal having good linearity with respect to the input magnetic field. As a means for generating a bias magnetic field, a bias conductor film is directly formed on the MR element 23 and a shunt bias method is applied in which a bias is applied by using a magnetic field generated by a current flowing through the bias conductor film, and a thin film is provided in the vicinity of the MR element 23. A magnet bias method and the like in which permanent magnets are arranged and a magnetic field generated by a thin film permanent magnet is used are known. Then, the change in the magnetic field of the magnetic disk is
It is detected as a change in the electric resistance value of the element 23.
【００１９】ここで、下部磁気シールド膜２１及び上部
磁気シールド膜２２は、間隔を隔てて対向して配置され
ており、ＭＲ素子２３は下部磁気シールド膜２１と上部
磁気シールド膜２２との間に配置されているから、ＭＲ
素子２３が、その読み出し動作時に、外部磁界の影響、
特に、他の磁化反転遷移領域から生じる磁界の影響を受
けるのを遮断できる。Here, the lower magnetic shield film 21 and the upper magnetic shield film 22 are arranged facing each other with a space therebetween, and the MR element 23 is arranged between the lower magnetic shield film 21 and the upper magnetic shield film 22. Because it is located, MR
The element 23 is affected by an external magnetic field during the read operation,
In particular, it is possible to block the influence of the magnetic field generated from the other magnetization reversal transition region.
【００２０】しかも、上部磁気シールド膜２２は表面に
凹部２２０を有しており、書き込み素子３は下部磁性膜
３１の大部分が凹部２２０の上方に位置するように、読
み出し素子２の上に積層して設けられているから、凹部
２２０の深さ△ｈだけ、書き込み素子３とＭＲ素子２３
との間の間隔Ｈ１が縮小する。このため、スイングアー
ム方式によって位置決めする場合でも、書き込み素子３
とＭＲ素子２３との間のトラック幅方向のずれが縮小
し、書き込み素子３によって書き込まれた磁気記録を、
ＭＲ素子２３によって確実に読み出すことができるよう
になる。Moreover, the upper magnetic shield film 22 has a recess 220 on the surface thereof, and the write element 3 is laminated on the read element 2 so that most of the lower magnetic film 31 is located above the recess 220. Therefore, the write element 3 and the MR element 23 are formed by the depth Δh of the recess 220.
The interval H1 between and is reduced. Therefore, even when the positioning is performed by the swing arm method, the writing element 3
The deviation in the track width direction between the MR element 23 and the MR element 23 is reduced, and the magnetic recording written by the writing element 3 is
The MR element 23 enables reliable reading.
【００２１】しかも、上部磁気シールド膜２２は凹部２
２０の外側が厚い膜厚を保っているから、凹部２２０の
部分で膜厚が薄くなっているにも拘らず、凹部２２０の
外側の厚い膜厚部分で、ＭＲ素子２３に対する外部磁界
の影響、特に、他の磁化反転遷移領域から生じる磁界の
影響を受けるのを確実に遮断し得る。Moreover, the upper magnetic shield film 22 has the recess 2
Since the outer side of the recess 20 has a large film thickness, although the thickness of the recess 220 is thin, the effect of an external magnetic field on the MR element 23 is large at the outer side of the recess 220. In particular, it is possible to reliably block the influence of the magnetic field generated from the other magnetization reversal transition region.
【００２２】図示は、面内記録再生用磁気ヘッドである
が、垂直磁気記録再生用磁気ヘッド等であってもよい。Although the drawing shows the in-plane recording / reproducing magnetic head, it may be a perpendicular magnetic recording / reproducing magnetic head or the like.
【００２３】[0023]
【発明の効果】以上述べたように、本発明によれば、次
のような効果が得られる。 （ａ）読み出し素子は、ＭＲ素子を含んでいるから、誘
導型素子の場合の異なって、高周波特性を悪化させず
に、高速で読み出すことができる。書き込み素子は、磁
性膜及びコイルを有する誘導型磁気変換素子であるか
ら、高い書き込み能力を確保できる。 （ｂ）下部磁気シールド膜及び上部磁気シールド膜は、
間隔を隔てて対向して配置されており、ＭＲ素子は下部
磁気シールド膜と上部磁気シールド膜との間に配置され
ているから、ＭＲ素子が、その読み出し動作時に、外部
磁界の影響、特に、他の磁化反転遷移領域から生じる磁
界の影響を受けるのを遮断し得る薄膜磁気ヘッドを提供
できる。 （ｃ）上部磁気シールド膜は表面に凹部を有しており、
書き込み素子は磁性膜の大部分が凹部の上方に位置する
ように、読み出し素子の上に積層して設けられているか
ら、凹部の深さ分だけ、書き込み素子とＭＲ素子との間
の間隔が縮小され、書き込み素子とＭＲ素子との間のト
ラック幅方向のずれが縮小され、書き込み素子によって
書き込まれた磁気記録を、ＭＲ素子によって確実に読み
出し得る薄膜磁気ヘッドを提供できる。 （ｄ）上部磁気シールド膜は凹部の外側が厚い膜厚を保
っているから、凹部の部分で膜厚が薄くなっているにも
拘らず、凹部の外側の厚い膜厚部分で、ＭＲ素子が外部
磁界の影響、特に、他の磁化反転遷移領域から生じる磁
界の影響を受けるのを確実に遮断し得る薄膜磁気ヘッド
を提供できる。As described above, according to the present invention, the following effects can be obtained. (A) Since the read element includes the MR element, unlike the case of the inductive element, the read element can be read at high speed without deteriorating the high frequency characteristics. Since the writing element is an induction type magnetic conversion element having a magnetic film and a coil, high writing ability can be secured. (B) The lower magnetic shield film and the upper magnetic shield film are
Since the MR element is arranged to face each other with a space, and the MR element is arranged between the lower magnetic shield film and the upper magnetic shield film, the MR element has an influence of an external magnetic field, particularly It is possible to provide a thin film magnetic head capable of blocking the influence of a magnetic field generated from another magnetization switching region. (C) The upper magnetic shield film has a recess on the surface,
Since the write element is laminated on the read element such that most of the magnetic film is located above the recess, the gap between the write element and the MR element is equal to the depth of the recess. It is possible to provide a thin film magnetic head that is reduced in size and the shift in the track width direction between the write element and the MR element is reduced, and the magnetic recording written by the write element can be reliably read by the MR element. (D) Since the upper magnetic shield film keeps a thick film thickness outside the concave portion, the MR element is not formed in the thick film thickness portion outside the concave portion although the film thickness is thin in the concave portion. It is possible to provide a thin film magnetic head capable of reliably blocking the influence of an external magnetic field, particularly the influence of a magnetic field generated from another magnetization reversal transition region.
【図１】本発明に係る薄膜磁気ヘッドをモデル化して示
す断面図である。FIG. 1 is a cross-sectional view showing a model of a thin film magnetic head according to the present invention.
【図２】本発明に係る薄膜磁気ヘッドの読み出し素子部
分の拡大斜視図である。FIG. 2 is an enlarged perspective view of a read element portion of the thin film magnetic head according to the present invention.
【図３】本発明に係る薄膜磁気ヘッドの磁極配置を示す
拡大図である。FIG. 3 is an enlarged view showing a magnetic pole arrangement of a thin film magnetic head according to the present invention.
１ スライダ ２ 読み出し素子 ２１ 下部磁気シールド膜 ２２ 上部磁気シールド膜 ２２０ 凹部 ２３ ＭＲ素子 ３ 書き込み素子 1 slider 2 read element 21 lower magnetic shield film 22 upper magnetic shield film 220 recess 23 MR element 3 write element
Claims (1)
素子とを有する薄膜磁気ヘッドであって、 前記読み出し素子は、下部磁気シールド膜と、上部磁気
シールド膜と、磁気抵抗効果素子とを含み、前記スライ
ダ上に設けられ、前記下部磁気シールド膜及び前記上部
磁気シールド膜が間隔を隔てて対向して配置され、前記
上部磁気シールド膜が上面側に凹部を有し、磁気抵抗効
果素子が前記下部磁気シールド膜と前記上部磁気シール
ド膜との間に配置されており、 前記書き込み素子は、磁性膜及びコイルを有する誘導型
磁気変換素子であって、前記磁性膜の大部分が前記凹部
の上方に位置するように、前記読み出し素子の上に積層
して設けられている薄膜磁気ヘッド。1. A thin-film magnetic head having a slider, a read element, and a write element, wherein the read element includes a lower magnetic shield film, an upper magnetic shield film, and a magnetoresistive effect element. It is provided on a slider, the lower magnetic shield film and the upper magnetic shield film are arranged to face each other with a space, the upper magnetic shield film has a concave portion on the upper surface side, and the magnetoresistive effect element is the lower magnetic shield element. The write element is arranged between a shield film and the upper magnetic shield film, and the write element is an inductive magnetic conversion element having a magnetic film and a coil, and most of the magnetic film is located above the recess. As described above, the thin film magnetic head provided on the read element in a laminated manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4165395A JPH05334628A (en) | 1992-06-01 | 1992-06-01 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4165395A JPH05334628A (en) | 1992-06-01 | 1992-06-01 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05334628A true JPH05334628A (en) | 1993-12-17 |
Family
ID=15811591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4165395A Withdrawn JPH05334628A (en) | 1992-06-01 | 1992-06-01 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05334628A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2311889A (en) * | 1996-04-02 | 1997-10-08 | Tdk Corp | Thin film head with magnetic shielding between read/write elements |
-
1992
- 1992-06-01 JP JP4165395A patent/JPH05334628A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2311889A (en) * | 1996-04-02 | 1997-10-08 | Tdk Corp | Thin film head with magnetic shielding between read/write elements |
| GB2311889B (en) * | 1996-04-02 | 2000-02-09 | Tdk Corp | Combined type thin film magnetic head |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990803 |