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JPH05329759A - Wafer material edge face polishing device - Google Patents

Wafer material edge face polishing device

Info

Publication number
JPH05329759A
JPH05329759A JP16353592A JP16353592A JPH05329759A JP H05329759 A JPH05329759 A JP H05329759A JP 16353592 A JP16353592 A JP 16353592A JP 16353592 A JP16353592 A JP 16353592A JP H05329759 A JPH05329759 A JP H05329759A
Authority
JP
Japan
Prior art keywords
wafer material
tape
polishing
edge face
transfer mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16353592A
Other languages
Japanese (ja)
Other versions
JP2857816B2 (en
Inventor
Nobukazu Hosogai
信和 細貝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanshin Co Ltd
Original Assignee
Sanshin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanshin Co Ltd filed Critical Sanshin Co Ltd
Priority to JP4163535A priority Critical patent/JP2857816B2/en
Publication of JPH05329759A publication Critical patent/JPH05329759A/en
Application granted granted Critical
Publication of JP2857816B2 publication Critical patent/JP2857816B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

PURPOSE:To perform an excellent polishing work through oscillation of a pressure receiving pad in a manner to follow the shape of the edge face of a wafer material by providing an oscillating mechanism to oscillate the pressure receiving pad. CONSTITUTION:In the case of a work to polish the peripheral edge face of a wafer W, a polishing tape T guided in a flat state by a tape guide 31 by means of a tape transfer mechanism 4 is continuously transferred in a direction extending at right angles with the direction of the tangential line of the wafer material. The tape transfer mechanism 4 is oscillated in the direction of the tangential line of the wafer material by an oscillating mechanism and the wafer material is supported and rotated around the axis of a rotating mechanism by means of a rotating mechanism 1. Under this state, the tape transfer mechanism is moved forward by a moving mechanism and the polishing tape is brought into pressure contact with the peripheral edge face of the wafer material. A pressure receiving pad 42 capable of being oscillated by an oscillating mechanism 43 is oscillated following the shape of the peripheral edge face of the wafer material W. This constitution performs an excellent work to polish the peripheral edge face of the wafer material W.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は例えばシリコンからなる
半導体ウエハーの縁端面の研磨加工に用いられるウエハ
ー材縁端面研磨装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer material edge surface polishing apparatus used for polishing edge surfaces of semiconductor wafers made of, for example, silicon.

【0002】[0002]

【従来の技術】従来この種の半導体ウエハーの縁端面を
加工する装置としてベベリング装置なるものが知られて
いる。
2. Description of the Related Art Conventionally, a beveling device is known as a device for processing the edge surface of a semiconductor wafer of this type.

【0003】図9に示すように、このウエハー材Wはシ
リコン等の薄板状であって、円周状の縁端面F1及び直
線状の縁端面F2(オリエンテーションフラット)から
なる縁端面Fを有している。
As shown in FIG. 9, this wafer material W is a thin plate made of silicon or the like, and has an edge face F composed of a circumferential edge face F 1 and a straight edge face F 2 (orientation flat). Have

【0004】そして上記従来構造のものは、ウエハー材
Wの縁端面Fに適合させた凹周面を有する回転砥石を用
い、この回転砥石をウエハー材Wの縁端面Fに圧接させ
て研磨加工を行うように構成されている。
In the conventional structure described above, a rotary grindstone having a concave peripheral surface adapted to the edge face F of the wafer material W is used, and the rotary grindstone is pressed against the edge face F of the wafer material W for polishing. Is configured to do.

【0005】[0005]

【発明が解決しようとする課題】しかしながら回転砥石
を用いる従来構造の場合、砥石のドレッシング加工が不
可欠となり、かつ砥石の回転作用のみによる研磨作用で
あるため満足し得る研磨面の状態にならないことがある
とともにチッピングが生じ易いという不都合を有してい
る。
However, in the case of the conventional structure using the rotary grindstone, the dressing process of the grindstone is indispensable, and since the polishing operation is performed only by the rotating operation of the grindstone, the state of the satisfactory polishing surface may not be obtained. In addition, there is a disadvantage that chipping easily occurs.

【0006】[0006]

【課題を解決するための手段】本発明はこのような課題
を解決することを目的とするもので、ウエハー材をその
軸線廻りに支持回転させる回転機構と、研磨テープをウ
エハー材の接線方向と直交する方向に連続移送させるテ
ープ移送機構と、該テープ移送機構を進退移動させる移
動機構と、該テープ移送機構をウエハー材の接線方向に
揺振運動させる揺振機構と、該研磨テープを平坦状に案
内可能なテープガイド部と、該研磨テープとウエハー材
の縁端面との圧接力を受ける受圧パッドと、該受圧パッ
ドの首振揺動を可能とする首振機構と、該テープ移送機
構をウエハー材の接線方向に送り運動させる送り機構と
を具備したことを特徴とするウエハー材縁端面研磨装置
にある。
SUMMARY OF THE INVENTION An object of the present invention is to solve such problems, and a rotation mechanism for supporting and rotating a wafer material around its axis, and a polishing tape in a tangential direction of the wafer material. A tape transfer mechanism for continuously transferring in a direction orthogonal to each other, a moving mechanism for moving the tape transfer mechanism forward and backward, a shaking mechanism for rocking the tape transfer mechanism in a tangential direction of a wafer material, and a flat polishing tape. A tape guide portion that can be guided to the inner surface, a pressure receiving pad that receives a pressure contact force between the polishing tape and the edge surface of the wafer material, a swing mechanism that enables swinging of the pressure receiving pad, and a tape transfer mechanism. A wafer material edge polishing apparatus comprising a feed mechanism for feeding the wafer material in a tangential direction.

【0007】[0007]

【作用】ウエハー材の円周状の縁端面の研磨加工の場
合、テープ移送機構によりテープガイド部によって平坦
状に案内された研磨テープをウエハー材の接線方向と直
交する方向に連続移送させ、かつテープ移送機構を揺振
機構によりウエハー材の接線方向に揺振運動させ、回転
機構によりウエハーをその軸線廻りに支持回転させ、こ
の状態でテープ移送機構を移動機構により前進移動させ
ると、研磨テープはウエハー材の円周状の縁端面に圧接
され、首振機構により首振揺動可能な受圧パッドは研磨
テープとウエハー材の縁端面との圧接力を受け、ウエハ
ー材の円周状の縁端面はウエハー材の回転作用、研磨テ
ープの移送作用及び研磨テープの揺振作用の三つの複合
作用により圧接研磨されることになる。
In the case of polishing the peripheral edge surface of the wafer material, the polishing tape guided by the tape guide portion in a flat shape by the tape transfer mechanism is continuously transferred in the direction orthogonal to the tangential direction of the wafer material, and When the tape transfer mechanism is oscillated in the tangential direction of the wafer material by the oscillating mechanism, and the wafer is supported and rotated around its axis by the rotating mechanism, and the tape transfer mechanism is moved forward by the moving mechanism in this state, the polishing tape is removed. The pressure-sensitive pad, which is pressed against the circumferential edge surface of the wafer material and can be swung by the swing mechanism, receives the pressure contact force between the polishing tape and the edge surface of the wafer material, and the circumferential edge surface of the wafer material. Is pressed and polished by the combined action of the rotation of the wafer material, the transfer of the polishing tape, and the shaking action of the polishing tape.

【0008】またウエハー材の直線状の縁端面の研磨加
工の場合、テープ移送機構によりテープガイド部によっ
て平坦状に案内された研磨テープをウエハー材の接線方
向と直交する方向に連続移送させ、かつテープ移送機構
を揺振機構によりウエハー材の接線方向に揺振運動さ
せ、ウエハー材の回転を停止させて直線状の縁端面と研
磨テープのテープ面とが相対峙する状態とし、この状態
でテープ移送機構を移動機構により前進移動させるとと
もにテープ移送機構を送り機構によりウエハー材の接線
方向に送り運動させると、研磨テープはウエハー材の直
線状の縁端面に圧接され、首振機構により首振揺動可能
な受圧パッドは研磨テープとウエハー材の縁端面との圧
接力を受け、ウエハー材の直線状の縁端面は研磨テープ
の移送作用、研磨テープの揺振作用及び研磨テープの送
り作用の三つ複合の作用により圧接研磨されることにな
る。
Further, in the case of polishing the linear edge surface of the wafer material, the polishing tape guided flat by the tape guide portion by the tape transfer mechanism is continuously transferred in the direction orthogonal to the tangential direction of the wafer material, and The tape transfer mechanism is oscillated by the oscillating mechanism in the tangential direction of the wafer material, and the rotation of the wafer material is stopped so that the linear edge surface and the tape surface of the polishing tape face each other. When the transfer mechanism is moved forward by the moving mechanism and the tape transfer mechanism is moved in the tangential direction of the wafer material by the feeding mechanism, the polishing tape is pressed against the linear edge surface of the wafer material, and the swing mechanism swings the head. The movable pressure receiving pad receives the pressure contact force between the polishing tape and the edge surface of the wafer material, and the linear edge surface of the wafer material transfers the polishing tape and the polishing tape. It will be pressed against the polishing by the action of the three composite Yurafu action and feeding action of the polishing tape flop.

【0009】[0009]

【実施例】図1乃至図8は本発明の実施例を示し、1は
回転機構であって、図外のモータ等により回転する回転
軸2の端部に負圧吸引作用を有する吸着パッド3を取付
け、この吸着パッド3によりウエハー材Wの板面を吸着
し、回転軸2によりウエハー材をその軸線W1の廻りに
支持回転させるように構成している。
1 to 8 show an embodiment of the present invention, in which 1 is a rotating mechanism, and a suction pad 3 having a negative pressure suction action at the end of a rotary shaft 2 rotated by a motor or the like not shown. The suction pad 3 sucks the plate surface of the wafer material W, and the rotating shaft 2 supports and rotates the wafer material around its axis W 1 .

【0010】4はテープ移送機構、5は移動機構、6は
揺振機構、7は送り機構であって、この場合移動機構5
はテープ移送機構4のみを進退移動させる移動機構5a
とテープ移送機構4を含む全体を進退移動させる移動機
構5bからなり、この移動機構5bにあっては、機台8
上に基台9を固定し、基台9上に摺動部10により前後
移動台11を図1の左右方向である前後方向に移動可能
に設け、前後移動台11を前後移動させる前後動用シリ
ンダ12を設けてなり、また送り機構7は、この前後移
動台11上に摺動部13により送り移動台14を図2の
左右方向である左右方向に移動可能に設け、送り移動台
14を左右移動させる送り用シリンダ15を設けて構成
されている。
Reference numeral 4 is a tape transfer mechanism, 5 is a moving mechanism, 6 is a vibrating mechanism, and 7 is a feeding mechanism. In this case, the moving mechanism 5 is used.
Is a moving mechanism 5a for moving only the tape transfer mechanism 4 back and forth.
And a moving mechanism 5b for moving the entire unit including the tape transfer mechanism 4 back and forth. In this moving mechanism 5b, the machine base 8
A cylinder for forward and backward movement, in which a base 9 is fixed on the base 9, a front and rear moving base 11 is provided on the base 9 by a sliding portion 10 so as to be movable in the front and rear direction which is the left and right direction in FIG. Further, the feed mechanism 7 is provided with the feed mechanism 7 on the front-back movement base 11 by the sliding portion 13 so as to be movable in the left-right direction which is the left-right direction in FIG. A feeding cylinder 15 for moving is provided.

【0011】また揺振機構6は、上記送り移動台14上
に摺動部16により揺振台17を図2の左右方向である
左右方向に移動可能に設け、上記送り移動台14上にブ
ラケット18を取付け、ブラケット18に揺振用モータ
19を取付け、ブラケット18に駆動軸20を軸受け
し、駆動軸20の上端部に揺振用モータ19の主軸を連
結し、駆動軸20の下端部に偏心軸部20aを形成し、
偏心軸部20aにカムフォロワー21を取付け、揺振台
17上に二個のガイド板22をカムフォロワー21を挟
装する状態に対向して取付け、揺振用モータ19の駆動
により駆動軸20を回転させ、偏心軸部20aに取り付
けたカムフォロワー21とガイド板22との作用で上記
摺動部16によって揺振運動させるように構成してい
る。
The swing mechanism 6 is provided with a swing portion 17 on the feed moving base 14 by a sliding portion 16 so as to be movable in the left and right directions which are the left and right directions in FIG. 18 is attached, the vibration motor 19 is attached to the bracket 18, the drive shaft 20 is borne by the bracket 18, the main shaft of the vibration motor 19 is connected to the upper end of the drive shaft 20, and the lower end of the drive shaft 20 is connected. Forming an eccentric shaft portion 20a,
The cam follower 21 is attached to the eccentric shaft portion 20a, and two guide plates 22 are attached on the shaking table 17 so as to face each other with the cam follower 21 sandwiched therebetween, and the driving shaft 20 is driven by driving the shaking motor 19. The cam follower 21 that is rotated and attached to the eccentric shaft portion 20a and the guide plate 22 are caused to oscillate by the sliding portion 16.

【0012】また移動機構5のうち、テープ移送機構4
のみを進退移動させる移動機構5aは、上記揺振台17
に取付板23を立設し、取付板23の側面に摺動部24
を介してスライド台25を前後動作可能に設け、取付板
23にスライド台25を前後動作させる作動用シリンダ
26を設けて構成している。
Of the moving mechanism 5, the tape transfer mechanism 4
The moving mechanism 5a that moves only the back and forth is used for the shaking table 17
The mounting plate 23 is installed upright on the
The slide base 25 is provided so as to be movable back and forth via the, and the mounting plate 23 is provided with an operating cylinder 26 for moving the slide base 25 back and forth.

【0013】またテープ移送機構4は、この場合上記取
付板23にポリエステルフィルム、メタル、クロス等の
基材に酸化アルミニュウム、酸化クロム、シリコンカー
バイド、ダイヤモンド等の所定粒度の研磨粒子をコーテ
ィング又は結合してなる研磨テープTの実巻リール27
及び巻取リール28を軸着し、スライド台25上に軸受
筒部29を配設し、軸受筒部29に回り止め状態で支持
筒30を配設し、支持筒30にテープガイド部31を配
設し、実巻リール27より引き出した研磨テープTをロ
ーラー32、テープガイド部31、ローラー33、一対
の挟装ローラー34a・34bの間、ローラー35を介
して巻取リール28に巻回し、実巻リール27をサーボ
モータ36により駆動すると共に挟装ローラー34aを
サーボモータ37により駆動させ、かつ巻取リール28
に挟装ローラー34aの回転を図外のベルト伝導機構に
より駆動し、研磨テープTをバックテンションを付与し
つつ一方向に連続移送させるように構成している。
Further, in this case, the tape transfer mechanism 4 coats or bonds the mounting plate 23 with abrasive particles having a predetermined particle size such as aluminum oxide, chromium oxide, silicon carbide and diamond on the base material such as polyester film, metal and cloth. Real reel 27 of polishing tape T
Also, the take-up reel 28 is attached to the shaft, the bearing tube portion 29 is provided on the slide base 25, the support tube 30 is provided in the bearing tube portion 29 in a non-rotating state, and the tape guide portion 31 is provided on the support tube 30. The polishing tape T that is arranged and pulled out from the actual winding reel 27 is wound around the winding reel 28 via the roller 32 between the roller 32, the tape guide portion 31, the roller 33, and the pair of sandwiching rollers 34a and 34b, The actual winding reel 27 is driven by the servo motor 36, the sandwiching roller 34a is driven by the servo motor 37, and the winding reel 28
Further, the rotation of the sandwiching roller 34a is driven by a belt transmission mechanism (not shown) to continuously transfer the polishing tape T in one direction while applying back tension.

【0014】また上記テープガイド部31は、上記支持
筒30に保持板38を取付け、保持板38の上下位置に
アーム39・39を取付け、アーム39・39に支持ア
ーム40・40を取付け、支持アーム40・40にガイ
ドローラー41・41を取付け、研磨テープTを平坦状
に案内可能に構成している。
Further, in the tape guide portion 31, the holding plate 38 is attached to the support cylinder 30, the arms 39 and 39 are attached to the upper and lower positions of the holding plate 38, and the support arms 40 and 40 are attached to and supported by the arms 39 and 39. The guide rollers 41, 41 are attached to the arms 40, 40 so that the polishing tape T can be guided flatly.

【0015】42は受圧パッドと、43は首振機構であ
って、この場合上記支持筒30の中心上に取付軸44を
回動盤45の回転により進退調節可能に嵌挿配設し、取
付軸44に支持駒46を止めネジ47により位置固定
し、支持駒46に支点軸48により受圧パッド42を上
下首振揺動可能に枢着し、支点軸48を境にした上下位
置にして支持駒46と受圧パッド42との間にそれぞれ
圧縮バネ49・49を介在配置し、受圧パッド42にウ
レタンゴムからなる弾性部材50を設けて構成してい
る。
Reference numeral 42 is a pressure receiving pad, and 43 is a swing mechanism. In this case, a mounting shaft 44 is fitted and disposed on the center of the support cylinder 30 so as to be adjustable forward and backward by the rotation of a rotating plate 45. The support piece 46 is positionally fixed to the shaft 44 by a set screw 47, and the pressure receiving pad 42 is pivotally attached to the support piece 46 by a fulcrum shaft 48 so as to swing vertically and swingably, and is supported at a vertical position with the fulcrum shaft 48 as a boundary. Compression springs 49, 49 are respectively interposed between the piece 46 and the pressure receiving pad 42, and the pressure receiving pad 42 is provided with an elastic member 50 made of urethane rubber.

【0016】この実施例は上記構成であるから、図7の
如く、ウエハー材Wの円周状の縁端面F1を研磨加工す
る場合、テープ移送機構4によりテープガイド部31に
よって平坦状に案内された研磨テープTをウエハー材W
の接線方向と直交する方向に連続移送させ、かつテープ
移送機構4を揺振機構6によりウエハー材Wの接線方向
に揺振運動させ、回転機構1によりウエハーWをその軸
線W1廻りに支持回転させ、この状態でテープ移送機構
4を移動機構5の内、移動機構5aにより前進移動させ
ると、研磨テープTはウエハー材Wの円周状の縁端面F
1に圧接され、首振機構43により首振揺動可能な受圧
パッド42は研磨テープTとウエハー材Wの縁端面F1
との圧接力を受け、ウエハー材Wの円周状の縁端面F1
はウエハー材Wの回転作用、研磨テープTの移送作用及
び研磨テープTの揺振作用の三つの複合作用により圧接
研磨されることになり、このため良好な研磨加工を得る
ことができる。
Since this embodiment has the above-mentioned structure, as shown in FIG. 7, when the circumferential edge surface F 1 of the wafer material W is polished, it is guided flat by the tape guide portion 31 by the tape transfer mechanism 4. The polished polishing tape T is used as a wafer material W
Is continuously transferred in a direction perpendicular to the tangential direction of the wafer W, and the tape transfer mechanism 4 is oscillated in the tangential direction of the wafer material W by the oscillating mechanism 6, and the rotation mechanism 1 supports and rotates the wafer W around its axis W 1. Then, when the tape transfer mechanism 4 is moved forward by the moving mechanism 5a in the moving mechanism 5 in this state, the polishing tape T is moved to the circumferential edge surface F of the wafer material W.
The pressure receiving pad 42 which is pressed against 1 and can be swung by the swing mechanism 43 is an edge face F 1 of the polishing tape T and the wafer material W.
And a peripheral edge surface F 1 of the wafer material W under the pressure contact force with
Will be pressed and polished by three combined actions of the rotation action of the wafer material W, the transport action of the polishing tape T, and the shaking action of the polishing tape T. Therefore, a good polishing process can be obtained.

【0017】またウエハー材Wの直線状の縁端面F2
研磨加工する場合、図8の如く、テープ移送機構4によ
り上記同様に研磨テープTをウエハー材Wの接線方向と
直交する方向に連続移送させ、かつテープ移送機構4を
揺振機構6によりウエハー材Wの接線方向に揺振運動さ
せ、ウエハー材Wの回転を停止させて直線状の縁端面F
2と研磨テープTのテープ面とが相対峙する状態とし、
この状態でテープ移送機構4を移動機構5の内、移動機
構5bにより直線状の縁端面F2と円周状の縁端面F1
の半径方向の差分だけ前進移動させ、かつ移動機構5a
により前進移動させ、そしてテープ移送機構4を送り機
構7によりウエハー材Wの接線方向に送り運動させる
と、研磨テープTはウエハー材Wの直線状の縁端面F2
に圧接され、首振機構43により首振揺動可能な受圧パ
ッド42は研磨テープTとウエハー材Wの縁端面F2
の圧接力を受け、ウエハー材Wの直線状の縁端面F2
研磨テープTの移送作用、研磨テープTの揺振作用及び
研磨テープTの送り作用の三つの複合作用により圧接研
磨されることになり、このため良好な研磨加工を得るこ
とができる。
When the linear edge surface F 2 of the wafer material W is polished, as shown in FIG. 8, the tape transfer mechanism 4 continues the polishing tape T in a direction orthogonal to the tangential direction of the wafer material W as described above. The tape transfer mechanism 4 is oscillated in the tangential direction of the wafer material W by the oscillating mechanism 6 to stop the rotation of the wafer material W to form a linear edge face F.
2 and the tape surface of the polishing tape T face each other,
The state among the tape transport mechanism 4 of the moving mechanism 5, only the radial difference is advanced to the straight edge surfaces F 2 and circumferential edge surfaces F 1 by a moving mechanism 5b, and the moving mechanism 5a
When the tape transfer mechanism 4 is moved forward in the tangential direction of the wafer material W by the feeding mechanism 7, the polishing tape T moves linearly to the edge surface F 2 of the wafer material W.
The pressure receiving pad 42, which is pressed against and is swingable by the swing mechanism 43, receives the pressure contact force between the polishing tape T and the edge surface F 2 of the wafer material W, and the linear edge surface F 2 of the wafer material W is Since the polishing tape T is transferred, the shaking motion of the polishing tape T, and the feeding operation of the polishing tape T are combined, pressure contact polishing is performed. Therefore, excellent polishing processing can be obtained.

【0018】この研磨加工の際、受圧パッド42は首振
機構43の二個の圧縮バネ49・49の作用により支点
軸48を中心として上下に首振揺動でき、このためウエ
ハー材Wの縁端面F1の形状に追従して揺動することが
でき、それだけ研磨テープTを縁端面F1に良好に圧接
させることができ、良好な研磨加工を得ることができ
る。
During this polishing process, the pressure receiving pad 42 can swing up and down about the fulcrum shaft 48 by the action of the two compression springs 49, 49 of the swing mechanism 43, so that the edge of the wafer material W can be swung. The end face F 1 can be swung following the shape of the end face F 1 , so that the polishing tape T can be brought into good pressure contact with the edge end face F 1, and good polishing processing can be obtained.

【0019】尚、本発明は上記実施例に限られるもので
はなく、例えば上記実施例では移動機構5としてシリン
ダ構造を採用しているが、ボールネジ機構とサーボモー
タとの組み合わせ構造を採用することもでき、また回転
機構として吸着パッドを採用しているが適宜支持回転構
造が採用され、また首振機構43の構造は適宜変更して
設計されるものである。
The present invention is not limited to the above-mentioned embodiment. For example, in the above-mentioned embodiment, a cylinder structure is adopted as the moving mechanism 5, but a combination structure of a ball screw mechanism and a servo motor may be adopted. In addition, although a suction pad is adopted as the rotating mechanism, a supporting and rotating structure is appropriately adopted, and the structure of the swinging mechanism 43 is appropriately changed and designed.

【0020】[0020]

【発明の効果】本発明は上述の如く、テープ移送機構に
よりテープガイド部によって平坦状に案内された研磨テ
ープをウエハー材の接線方向と直交する方向に連続移送
させ、かつテープ移送機構を揺振機構によりウエハー材
の接線方向に揺振運動させ、円周状の縁端面研磨の場合
には回転機構によりウエハーをその軸線廻りに支持回転
させ、又直線状の縁端面の研磨の場合には回転を停止さ
せ、この状態でテープ移送機構を移動機構により前進移
動させると、研磨テープはウエハー材の縁端面に圧接さ
れ、首振機構により首振揺動可能な受圧パッドは研磨テ
ープとウエハー材の縁端面との圧接力を受け、ウエハー
材の縁端面は研磨テープの移送作用、研磨テープの揺振
作用及びウエハー材の回転作用又は研磨テープの送り作
用の三つの作用により圧接研磨されることになり、かつ
この研磨加工の際、受圧パッドは首振機構により首振揺
動し、このためウエハー材の縁端面の形状に追従して揺
動することができ、良好な研磨加工を得ることができ
る。
As described above, according to the present invention, the polishing tape guided flat by the tape guide by the tape transfer mechanism is continuously transferred in the direction orthogonal to the tangential direction of the wafer material, and the tape transfer mechanism is vibrated. The mechanism oscillates in the tangential direction of the wafer material, the rotation mechanism supports and rotates the wafer about its axis in the case of circumferential edge polishing, and the rotation in the case of linear edge polishing. When the tape transfer mechanism is moved forward by the moving mechanism in this state, the polishing tape is brought into pressure contact with the edge surface of the wafer material, and the pressure-sensitive pad that can be oscillated by the swing mechanism moves between the polishing tape and the wafer material. Under the pressure contact force with the edge surface, the edge surface of the wafer material has three functions of the polishing tape transfer operation, the polishing tape swinging operation, the wafer material rotation operation, and the polishing tape feeding operation. Therefore, the pressure receiving pad swings and swings by the swinging mechanism during the polishing process, which allows it to swing following the shape of the edge surface of the wafer material. It is possible to obtain various polishing processes.

【0021】以上、所期の目的を充分達成することがで
きる。
As described above, the intended purpose can be sufficiently achieved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例の全体正面図である。FIG. 1 is an overall front view of an embodiment of the present invention.

【図2】本発明の実施例の縦断面図である。FIG. 2 is a vertical sectional view of an embodiment of the present invention.

【図3】本発明の実施例の部分斜視図である。FIG. 3 is a partial perspective view of an embodiment of the present invention.

【図4】本発明の実施例の部分断面図である。FIG. 4 is a partial cross-sectional view of an embodiment of the present invention.

【図5】本発明の実施例の部分側断面図である。FIG. 5 is a partial side sectional view of an embodiment of the present invention.

【図6】本発明の実施例の部分拡大側断面図である。FIG. 6 is a partially enlarged side sectional view of the embodiment of the present invention.

【図7】本発明の実施例の円周状の縁端面を研磨加工す
る状態の部分斜視図である。
FIG. 7 is a partial perspective view showing a state in which the circumferential edge surface of the embodiment of the present invention is polished.

【図8】本発明の実施例の直線状の縁端面を研磨加工す
る状態の部分斜視図である。
FIG. 8 is a partial perspective view showing a state where the linear edge surface of the embodiment of the present invention is polished.

【図9】ウエハー材の斜視図である。FIG. 9 is a perspective view of a wafer material.

【符号の説明】[Explanation of symbols]

W ウエハー材 T 研磨テープ F 縁端面 1 回転機構 4 テープ移送機構 5 移動機構 6 揺振機構 7 送り機構 31 テープガイド部 42 受圧パッド 43 首振機構 W Wafer Material T Polishing Tape F Edge Edge Surface 1 Rotating Mechanism 4 Tape Transfer Mechanism 5 Moving Mechanism 6 Shaking Mechanism 7 Feeding Mechanism 31 Tape Guide Section 42 Pressure-Receiving Pad 43 Swinging Mechanism

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ウエハー材をその軸線廻りに支持回転さ
せる回転機構と、研磨テープをウエハー材の接線方向と
直交する方向に連続移送させるテープ移送機構と、該テ
ープ移送機構を進退移動させる移動機構と、該テープ移
送機構をウエハー材の接線方向に揺振運動させる揺振機
構と、該研磨テープを平坦状に案内可能なテープガイド
部と、該研磨テープとウエハー材の縁端面との圧接力を
受ける受圧パッドと、該受圧パッドの首振揺動を可能と
する首振機構と、該テープ移送機構をウエハー材の接線
方向に送り運動させる送り機構とを具備したことを特徴
とするウエハー材縁端面研磨装置。
1. A rotation mechanism for supporting and rotating a wafer material around its axis, a tape transfer mechanism for continuously transferring a polishing tape in a direction orthogonal to a tangential direction of the wafer material, and a moving mechanism for moving the tape transfer mechanism forward and backward. A oscillating mechanism that oscillates the tape transfer mechanism in the tangential direction of the wafer material, a tape guide portion that can guide the polishing tape in a flat shape, and a pressure contact force between the polishing tape and the edge surface of the wafer material. A wafer material, comprising: a pressure receiving pad for receiving the pressure, a swinging mechanism capable of swinging the pressure receiving pad, and a feeding mechanism for feeding the tape transfer mechanism in a tangential direction of the wafer material. Edge polishing device.
JP4163535A 1992-05-29 1992-05-29 Wafer edge polishing machine Expired - Lifetime JP2857816B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4163535A JP2857816B2 (en) 1992-05-29 1992-05-29 Wafer edge polishing machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4163535A JP2857816B2 (en) 1992-05-29 1992-05-29 Wafer edge polishing machine

Publications (2)

Publication Number Publication Date
JPH05329759A true JPH05329759A (en) 1993-12-14
JP2857816B2 JP2857816B2 (en) 1999-02-17

Family

ID=15775730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4163535A Expired - Lifetime JP2857816B2 (en) 1992-05-29 1992-05-29 Wafer edge polishing machine

Country Status (1)

Country Link
JP (1) JP2857816B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07276204A (en) * 1994-04-13 1995-10-24 Fujikoshi Mach Corp Polishing device
US6924236B2 (en) 2000-05-31 2005-08-02 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device
US6933234B2 (en) 2001-11-26 2005-08-23 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device and polishing apparatus
US7014529B1 (en) 2004-10-15 2006-03-21 Kabushiki Kaisha Toshiba Substrate processing method and substrate processing apparatus
JP2007118187A (en) * 2007-02-15 2007-05-17 Ebara Corp Polishing device
US7367873B2 (en) 2002-02-12 2008-05-06 Ebara Corporation Substrate processing apparatus
JP2008518792A (en) * 2004-10-15 2008-06-05 株式会社東芝 Polishing apparatus and polishing method
JP2009004765A (en) * 2007-05-21 2009-01-08 Applied Materials Inc Method and apparatus for using rolling backing pad for substrate polishing
US7559825B2 (en) 2006-12-21 2009-07-14 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer
US7682225B2 (en) 2004-02-25 2010-03-23 Ebara Corporation Polishing apparatus and substrate processing apparatus
JP2012213849A (en) * 2011-03-25 2012-11-08 Ebara Corp Polishing device and polishing method
JP2016185592A (en) * 2012-09-25 2016-10-27 株式会社荏原製作所 Polishing device
JP2017087305A (en) * 2015-11-02 2017-05-25 日本電気硝子株式会社 Polishing method and polishing device for disk-shaped work-piece

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184662A (en) * 1981-05-09 1982-11-13 Hitachi Ltd Chamfering method and device of wafer
JPS6164950U (en) * 1984-10-04 1986-05-02
JPH03256660A (en) * 1990-03-02 1991-11-15 Sanshin:Kk Work polishing machine

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184662A (en) * 1981-05-09 1982-11-13 Hitachi Ltd Chamfering method and device of wafer
JPS6164950U (en) * 1984-10-04 1986-05-02
JPH03256660A (en) * 1990-03-02 1991-11-15 Sanshin:Kk Work polishing machine

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07276204A (en) * 1994-04-13 1995-10-24 Fujikoshi Mach Corp Polishing device
US6924236B2 (en) 2000-05-31 2005-08-02 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device
US6933234B2 (en) 2001-11-26 2005-08-23 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device and polishing apparatus
US7351131B2 (en) 2001-11-26 2008-04-01 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device and polishing apparatus
US7367873B2 (en) 2002-02-12 2008-05-06 Ebara Corporation Substrate processing apparatus
JP4772679B2 (en) * 2004-02-25 2011-09-14 株式会社荏原製作所 Polishing apparatus and substrate processing apparatus
US7682225B2 (en) 2004-02-25 2010-03-23 Ebara Corporation Polishing apparatus and substrate processing apparatus
US7862402B2 (en) 2004-02-25 2011-01-04 Ebara Corporation Polishing apparatus and substrate processing apparatus
US7014529B1 (en) 2004-10-15 2006-03-21 Kabushiki Kaisha Toshiba Substrate processing method and substrate processing apparatus
KR101249430B1 (en) * 2004-10-15 2013-04-03 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus and polishing method
JP2008518792A (en) * 2004-10-15 2008-06-05 株式会社東芝 Polishing apparatus and polishing method
US7559825B2 (en) 2006-12-21 2009-07-14 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer
JP4660494B2 (en) * 2007-02-15 2011-03-30 株式会社荏原製作所 Polishing cartridge
JP2007118187A (en) * 2007-02-15 2007-05-17 Ebara Corp Polishing device
JP2009004765A (en) * 2007-05-21 2009-01-08 Applied Materials Inc Method and apparatus for using rolling backing pad for substrate polishing
JP2012213849A (en) * 2011-03-25 2012-11-08 Ebara Corp Polishing device and polishing method
JP2016185592A (en) * 2012-09-25 2016-10-27 株式会社荏原製作所 Polishing device
JP2017087305A (en) * 2015-11-02 2017-05-25 日本電気硝子株式会社 Polishing method and polishing device for disk-shaped work-piece

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