JPH05329681A - Multilayered brazing filler metal and its production and connecting method - Google Patents
Multilayered brazing filler metal and its production and connecting methodInfo
- Publication number
- JPH05329681A JPH05329681A JP32605391A JP32605391A JPH05329681A JP H05329681 A JPH05329681 A JP H05329681A JP 32605391 A JP32605391 A JP 32605391A JP 32605391 A JP32605391 A JP 32605391A JP H05329681 A JPH05329681 A JP H05329681A
- Authority
- JP
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- Prior art keywords
- brazing material
- alloy
- brazing
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Die Bonding (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は多層ろう材とその製造方
法および接続方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer brazing material, a method of manufacturing the same and a method of connecting them.
【従来の技術】従来より合金ろう材は予め目的の組成で
ある合金を圧延などによりシートもしくは棒状に加工、
成形されている。そしてこの成形されたろう材は接合部
形状に合わせて必要な形状に加工し、使用されている。2. Description of the Related Art Conventionally, alloy brazing filler metals have been processed into sheets or rods by rolling an alloy having a desired composition in advance.
It is molded. Then, the formed brazing material is processed into a required shape in accordance with the shape of the joint and used.
【0002】図4は二元系合金のシート状ろう材の製造
法を説明する断面図である。ろう材を構成する二種類の
金属2aおよび2bを秤量、坩堝14に投入、溶融し、
圧延に適する厚さになるよう鋳型16に鋳込み、合金鋳
塊17を得る(図4(a))。この合金鋳塊17を目的
の厚さになるように数回に分けて熱間、または冷間にて
圧延する(図4(b))。 圧延された合金ろう材18
はスプール5に巻き取られているので使用する際は、ろ
う付けする部分の形状に合わせ、切断などの加工を施
す。また線引き加工により棒状のろう材を得ることもあ
る。FIG. 4 is a cross-sectional view for explaining a method of manufacturing a sheet-shaped brazing material of a binary alloy. Two kinds of metals 2a and 2b constituting the brazing material are weighed, put into the crucible 14 and melted,
An alloy ingot 17 is obtained by casting in a mold 16 so as to have a thickness suitable for rolling (FIG. 4 (a)). The alloy ingot 17 is hot-rolled or cold-rolled in several times so as to have a desired thickness (FIG. 4B). Rolled brazing alloy 18
Since it is wound on the spool 5, when it is used, processing such as cutting is performed according to the shape of the portion to be brazed. In addition, a rod-shaped brazing material may be obtained by wire drawing.
【0003】また所定の組成となるように金属の粉末を
混合し、溶剤を用いて接合部に塗布する粉末ろう材法が
ある。ろう材を構成する金属の粉末を所定量秤量し、全
体が均一に分散するようにミキサーで混合し、この混合
された金属粉末にバインダーを適量加え、さらに均一に
なるよう混合することによりペースト状のろう材を得
る。ペースト状のろう材を接合部に必要量だけ塗布し、
ろう材の融点以上に加熱する事でろう付けを完了する。
そのほか、電子部品のハンダ付けに用いられるクリーム
ハンダも粉末ろう材といえる。クリームハンダは目的の
ハンダ合金を溶融し、ガスアトマイズ法により合金粉末
を作成し、ハンダ合金に適したフラックスで混合する。Further, there is a powder brazing method in which metal powders are mixed so as to have a predetermined composition and the mixture is applied to a joint with a solvent. Weigh a certain amount of metal powder that constitutes the brazing filler metal, mix with a mixer so that the whole is uniformly dispersed, add an appropriate amount of binder to this mixed metal powder, and mix it to make a paste. Get the brazing material. Apply the required amount of paste brazing material to the joint,
Brazing is completed by heating above the melting point of the brazing material.
In addition, cream solder used for soldering electronic components can be said to be a powder brazing material. For cream solder, a target solder alloy is melted, alloy powder is prepared by a gas atomizing method, and mixed with a flux suitable for the solder alloy.
【0004】[0004]
【発明が解決しようとする課題】従来の圧延や線引きに
よる合金ろう材の加工は下記のような欠点を持ってい
る。合金自体が非常に硬い場合、加工できる形状に限界
があり、割れやひびなど発生し歩留りが低下する。また
圧延時の熱間加工や材料の保存状態、使用状態により材
料が酸化し、接合性が低下するなどの性能低下につなが
る。さらに使用目的に合わせるための切断、リボン巻き
取りなど、加工性が悪く、歩留りが低下する。粉末ろう
材法は、加工形状などには問題はないが、粉末の均一分
散性を得ることが難しく、長期保存すると比重の関係に
より分散性が低下する。また、バインダー、フラックス
を用いるため湿式工程を含み、洗浄する工程を取り入れ
るためコストがかかる。The conventional processing of brazing alloy material by rolling or drawing has the following drawbacks. If the alloy itself is extremely hard, there is a limit to the shape that can be processed, and cracks, cracks, etc. occur and yield decreases. Further, the material is oxidized depending on the hot working during rolling, the storage state of the material, and the usage state, which leads to deterioration of performance such as deterioration of bondability. Further, the workability such as cutting and winding the ribbon for the purpose of use is poor, and the yield is reduced. The powder brazing method has no problem in the processed shape, but it is difficult to obtain uniform dispersibility of the powder, and when stored for a long time, the dispersibility decreases due to the relationship of specific gravity. Further, since a binder and a flux are used, a wet process is included, and a cleaning process is required, which is costly.
【0005】[0005]
【課題を解決するための手段】本発明の多層ろう材は多
元系合金ろう材を構成する金属を合金ろう材の組成とな
る厚さの比率で多層化し、所定形状に加工、そして接続
部への供給をした後、合金ろう材の融点以上に加熱する
事により合金化して用いるものである。The multi-layer brazing material of the present invention is formed by multi-layering the metals constituting the multi-component alloy brazing material at a ratio of the thicknesses that make up the composition of the brazing alloy material, processing it into a predetermined shape, and connecting it to the connecting portion. After being supplied, the alloy is used by being heated to a temperature higher than the melting point of the brazing alloy to form an alloy.
【0006】また、本発明の多層ろう材製造方法は、合
金ろう材を構成する金属を個々に圧延し、圧延された金
属を重ね合わせ、クラッドする事、あるいは、構成金属
の一つの表面のその他の金属をメッキするものである。In the method for producing a multi-layer brazing material according to the present invention, the metals constituting the brazing alloy material are individually rolled, the rolled metals are superposed and clad, or one of the surfaces of the constituent metals is This is for plating metal.
【0007】[0007]
【実施例】本発明の実施例について、図面を参照して具
体的に説明する。Embodiments of the present invention will be specifically described with reference to the drawings.
【0008】図1は本発明の多層ろう材製造方法第一の
実施例を説明する断面図である。二元系合金を三層にす
る場合、合金ろう材を構成する金属である金属2a、金
属2bの2種類を圧延ロール1aおよび1bの3個の圧
延ロールにより個別に所定厚まで圧延する。このとき各
材料の厚さは次の工程であるクラッド時に圧延されるこ
とを考慮し決定される。圧延された金属2a.2bは重
ね合わせクラッド用の圧延ロール1cに投入され三層ろ
う材4を形成していく。FIG. 1 is a sectional view for explaining a first embodiment of the method for producing a multilayer brazing material according to the present invention. When the binary alloy is made into three layers, two kinds of metal, that is, the metal 2a and the metal 2b, which constitute the brazing alloy material, are individually rolled to a predetermined thickness by three rolling rolls 1a and 1b. At this time, the thickness of each material is determined in consideration of rolling at the time of clad which is the next step. Rolled metal 2a. 2b is put into a rolling roll 1c for superposing clad to form a three-layer brazing material 4.
【0009】図2は本発明の多層ろう材製造方法のもう
一つの実施例であるメッキ法を用いて二元系の三層ろう
材を形成する方法の断面図である。合金ろう材を構成す
る金属のひとつである金属2bを圧延ロール1により所
定厚に圧延し、順次メッキ槽7を通過させることにより
金属2bの表面に金属2aを堆積し、三層ろう材4を形
成する。FIG. 2 is a cross-sectional view of another embodiment of the method for producing a multi-layer brazing material according to the present invention, which is a method for forming a binary three-layer brazing material by using a plating method. A metal 2b, which is one of the metals forming the alloy brazing material, is rolled to a predetermined thickness by a rolling roll 1 and sequentially passed through a plating tank 7 to deposit the metal 2a on the surface of the metal 2b, thereby forming a three-layer brazing material 4. Form.
【0010】図3は本発明の接続方法の一実施例である
三層ろう材を用いて半導体素子を基板にフリップチップ
実装する工程を示す断面図である。半導体素子9上の電
極8に三層ろう材4をダイス19、ポンチ20により所
定量を打ち抜き供給する(図3(a))。この半導体素
子9をヒーターブロック10a上で加熱し、半球状のバ
ンプ11を形成する(図3(b))。バンプ11の形成
された半導体素子9を基板12の上にある電極8に位置
決め(図3(c))、搭載し、リフローして接続工程が
完了する(図3(d))。FIG. 3 is a sectional view showing a process of flip-chip mounting a semiconductor element on a substrate using a three-layer brazing material which is an embodiment of the connecting method of the present invention. The three-layer brazing material 4 is punched out and supplied to the electrode 8 on the semiconductor element 9 by the die 19 and the punch 20 (FIG. 3A). The semiconductor element 9 is heated on the heater block 10a to form hemispherical bumps 11 (FIG. 3B). The semiconductor element 9 having the bumps 11 formed thereon is positioned (FIG. 3C) on the electrode 8 on the substrate 12, mounted, and reflowed to complete the connection step (FIG. 3D).
【0011】実施例ではAu/20wt%Snの共晶ろ
う材となるようにSnを中心層とし、AuをSnリボン
の両面にクラッドした。この三層ろう材は仕上がり寸法
を中心となるSn厚が20μm、そしてSnの片面に1
5μmずつ、両面で合計30μmのAuをクラッドし5
0μmとした。三層ろう材を半導体素子上の電極に寸法
を合わせたダイス、ポンチを用いて打ち抜き、打ち抜い
たポンチによりろう材を半導体素子電極に圧着した。通
常、金属は合金化することにより合金を構成する各金属
より強度は高くなる。特にAuーSn系合金ではこの傾
向が顕著に現れるため、ダイス、ポンチによる加工は困
難になる。本実施例に従い作成した三層ろう材は加工性
が良好であり安定した打ち抜きができた。次いで三層ろ
う材を供給した半導体素子をヒーターブロックにより3
00℃に加熱したところ、AuとSnは拡散し、溶融し
て合金ろう材のバンプが形成できた。電極上にあるろう
材の微小片は酸化性の金属であるSnがAuにより両面
を被覆してあるため加工、溶融時の酸化性雰囲気にさら
される事がなくなりフラックスを用いなくとも溶融さ
れ、半球状のバンプとなった。その後、基板に搭載し、
リフローしたところバンプの高さ精度がよいので良好な
歩留りで接続できた。ここで、溶融温度は、Au/20
wt%Sn合金は融点が280℃の共晶合金であるが、
材料をクラッドする際AuとSnの厚さの制御により合
金の組成を調整しているので厚さの精度により若干融点
が高くなるため溶融させる温度は少し高めに設定する必
要がある。 なお、本実施例では半導体素子に多層ろう
材を供給し、バンプを形成したが、基板の電極にバンプ
を形成しても良い。また、多層ろう材の溶融をあらかじ
め行ない、合金ろう材のバンプを形成してから基板間の
接続を行ったが、合金ろう材の形成は基板間の接続と同
時に行なってもよい。In the example, Sn was used as the central layer and Au was clad on both sides of the Sn ribbon so as to be a eutectic brazing material of Au / 20 wt% Sn. This three-layer brazing material has an Sn thickness of 20 μm centered on the finished dimension, and one Sn on one side.
5 μm each, clad with Au of 30 μm in total on both sides 5
It was set to 0 μm. The three-layer brazing material was punched using a die and a punch whose size was adjusted to the electrode on the semiconductor element, and the brazing material was pressure-bonded to the semiconductor element electrode by the punched punch. Normally, when a metal is alloyed, the strength is higher than that of each metal constituting the alloy. This tendency is particularly pronounced in Au-Sn alloys, making it difficult to work with dies and punches. The three-layer brazing material prepared according to this example has good workability and stable punching was possible. Then, the semiconductor element to which the three-layer brazing material was supplied
When heated to 00 ° C., Au and Sn were diffused and melted to form bumps of the brazing alloy material. Tiny pieces of the brazing filler metal on the electrodes are coated with Au, which is an oxidizing metal, on both sides, so that they are not exposed to the oxidizing atmosphere during processing and melting, and are melted without using a flux. It became a bump. Then mount it on the board,
When reflowed, the bump height accuracy was good, so connection was possible with a good yield. Here, the melting temperature is Au / 20.
The wt% Sn alloy is a eutectic alloy with a melting point of 280 ° C.
When the material is clad, the composition of the alloy is adjusted by controlling the thickness of Au and Sn, so the melting point will be slightly higher due to the accuracy of the thickness, so the melting temperature must be set slightly higher. In this embodiment, the multilayer brazing material is supplied to the semiconductor element to form the bump, but the bump may be formed on the electrode of the substrate. Further, although the multilayer brazing material is melted in advance to form the bumps of the alloy brazing material before connecting the substrates, the alloy brazing material may be formed simultaneously with the connection between the substrates.
【0012】また、本発明の接続方法は半導体封止用パ
ッケージの接続に用いることもできる。すなわち、本発
明の多層ろう材をパッケージの封止部に合わせた形状に
加工して接続部に供給し、封止部品を組み合わせたあと
接続部を加圧し、加熱する。特に、共晶ろう材を用いる
場合、本発明の多層ろう材は加工が容易であり、加工用
のプレス冶具の寿命が改善できるとともに、表面層を酸
化しにくい層にすることなどにより接続の信頼性を高め
ることができる。The connecting method of the present invention can also be used for connecting a semiconductor encapsulating package. That is, the multilayer brazing material of the present invention is processed into a shape matching the sealing portion of the package and supplied to the connecting portion, and after the sealing components are combined, the connecting portion is pressurized and heated. In particular, when the eutectic brazing filler metal is used, the multilayer brazing filler metal of the present invention is easy to process, the life of the press jig for processing can be improved, and the reliability of the connection can be improved by making the surface layer hard to oxidize. You can improve your sex.
【発明の効果】本発明の多層ろう材は、圧延や線引きに
よる割れやひびなどの発生が無く歩留りが向上する。ま
た圧延時の熱間加工や材料の保存状態、使用状態による
材料の酸化はろう材表面に酸化しない材料または酸化性
の低い金属を配置することにより低下させる事が可能で
あり、フラックスを用いなくても良質のバンプを形成で
き信頼性の高い接合部を得られ、コスト、歩留り、そし
て信頼性の面からも有利である。さらに使用目的に合わ
せるための切断、リボン巻き取りなど、加工性が容易に
なり、歩留りが向上する。EFFECT OF THE INVENTION The multilayer brazing material of the present invention is free from cracks and cracks due to rolling and drawing, and yield is improved. In addition, the hot working during rolling, the material storage condition, and the oxidation of the material due to usage conditions can be reduced by placing a non-oxidizing material or a metal with low oxidizability on the surface of the brazing material, and without using flux. However, high quality bumps can be formed and a highly reliable joint can be obtained, which is advantageous in terms of cost, yield, and reliability. Further, the workability such as cutting and winding the ribbon for the purpose of use is facilitated and the yield is improved.
【図1】本発明の一実施例である多層ろう材の製造方法
を説明する断面図である。FIG. 1 is a cross-sectional view illustrating a method for manufacturing a multilayer brazing material that is an embodiment of the present invention.
【図2】本発明のもう一つの実施例である多層ろう材の
製造方法を説明する断面図である。FIG. 2 is a cross-sectional view illustrating a method for manufacturing a multilayer brazing material that is another embodiment of the present invention.
【図3】本発明の接続方法の一実施例を説明する工程断
面図である。FIG. 3 is a process sectional view illustrating an embodiment of the connection method of the present invention.
【図4】従来の合金ろう材の製造方法を示す工程断面図
である。FIG. 4 is a process cross-sectional view showing a method for manufacturing a conventional brazing alloy material.
1a,1b,1c 圧延ロール 2a,2b 金属 4 三層ろう材 5 スプール 6 材料ガイド 7 メッキ槽 8 電極 9 半導体素子 10a,10b ヒーターブロック 11 バンプ 12 基板 13 加熱ヒーター 14 坩堝 15 溶融合金 16 鋳型 17 合金鋳塊 18 合金ろう材 19 ダイス 20 ポンチ 1a, 1b, 1c Rolling roll 2a, 2b Metal 4 Three-layer brazing material 5 Spool 6 Material guide 7 Plating bath 8 Electrode 9 Semiconductor element 10a, 10b Heater block 11 Bump 12 Substrate 13 Heating heater 14 Crucible 15 Molten alloy 16 Mold 17 Alloy Ingot 18 Alloy brazing material 19 Die 20 Punch
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成4年1月6日[Submission date] January 6, 1992
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】全図[Correction target item name] All drawings
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図1】 [Figure 1]
【図2】 [Fig. 2]
【図3】 [Figure 3]
【図4】 [Figure 4]
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/321 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 21/321
Claims (12)
合金ろう材の組成となる厚さの比率で多層化し、所定形
状に加工、そして接続部への供給をした後、前記合金ろ
う材の融点以上に加熱することにより合金化させて用い
ることを特徴とした多層ろう材。1. The alloy brazing filler metal after the metal constituting the multi-component alloy brazing filler metal is multi-layered at a ratio of the thicknesses of the alloy brazing filler metal, processed into a predetermined shape, and supplied to the connecting portion. A multi-layer brazing material characterized by being used by being alloyed by heating above the melting point of.
記合金ろう材を構成する金属を前記共晶反応を起こす共
晶点組成となる厚さの比率で多層化することを特徴とし
た請求項1記載の多層ろう材。2. The multi-component alloy brazing material has a eutectic reaction, and the metal forming the brazing alloy material is multi-layered at a ratio of thicknesses such that the eutectic point composition causes the eutectic reaction. The multilayer brazing material according to claim 1.
および、Snであり、前記Auと前記Snを二層にする
ことを特徴とした請求項1または2記載の多層ろう材。3. The metal constituting the multi-component brazing alloy is Au.
3. The multi-layer brazing material according to claim 1, wherein the multi-layer brazing material is Sn, and the Au and the Sn are two layers.
および、Snであり、前記Auで前記Snを挟み、三層
にすることを特徴とする請求項1または2記載の多層ろ
う材。4. The metal constituting the multi-component brazing alloy is Au.
3. The multi-layer brazing material according to claim 1 or 2, wherein the multi-layer brazing material is Sn, and the Sn is sandwiched between the Au layers to form three layers.
し、前記圧延された金属を重ね合わせクラッドすること
を特徴とする多層ろう材製造方法。5. A method for producing a multi-layer brazing material, characterized in that the metals constituting the brazing alloy material are individually rolled, and the rolled metals are superposed and clad.
し、前記圧延された金属に前記合金ろう材を構成する他
の金属をメッキすることを特徴とする多層ろう材製造方
法。6. A method for producing a multi-layer brazing material, comprising rolling one metal constituting the brazing alloy material and plating the rolled metal with another metal constituting the brazing alloy material.
合金ろう材の組成となる厚さの比率で多層化した多層ろ
う材よりプレス加工して形成した多層ろう材片を第一の
基板の電極に供給した後、第二の基板を前記多層ろう材
片と前記第二の基板の電極とを位置合わせして搭載し、
加熱する事により前記多層ろう材を合金化するとともに
前記第一および第二の基板の前記電極間を接続する事を
特徴とする接続方法。7. The first substrate is a multilayer brazing material piece formed by pressing a metal constituting the multi-component alloy brazing material into a multilayer brazing material having a thickness ratio of the composition of the alloy brazing material. After supplying to the electrode of, the second substrate is mounted by aligning the multilayer brazing material piece and the electrode of the second substrate,
A connection method, characterized in that the multilayer brazing material is alloyed by heating and the electrodes of the first and second substrates are connected to each other.
合金ろう材の組成となる厚さの比率で多層化した多層ろ
う材よりプレス加工して形成した多層ろう材片を第一の
基板の電極に供給した後、前記第一の基板を加熱し、前
記多層ろう材片を溶融して合金ろう材の突起物を形成
し、その後に第二の基板を前記突起物と前記第二の基板
の電極に位置合わせして加熱する事により前記第一およ
び第二の基板の電極間を接続する事を特徴とする接続方
法。8. A first substrate is a multi-layer brazing material piece formed by pressing from a multi-layer brazing material in which the metal forming the multi-component alloy brazing material is multi-layered at a ratio of the thickness of the alloy brazing material. After heating the first substrate, the multilayer brazing material pieces are melted to form protrusions of the brazing alloy material, and then the second substrate is applied to the protrusions and the second A connection method characterized in that the electrodes of the first and second substrates are connected by aligning with the electrodes of the substrate and heating.
素子を封止する半導体素子封止用パッケージの前記部品
の少なくとも一つの接続部に、多元系合金ろう材を構成
する金属の複数の層からなる多層ろう材を前記接続部の
形状に合わせてプレス加工して形成した多層ろう材片を
供給した後、前記部品を組み合わせ、前記パッケージを
加圧しながら加熱して前記多層ろう材を合金化するとと
もに前記パッケージの封止を行なう事を特徴とする接続
方法。9. A semiconductor element encapsulating package for connecting at least two parts to seal a semiconductor element, wherein at least one connecting part of the parts comprises a plurality of layers of metal constituting a multi-component alloy brazing material. After supplying a multi-layer brazing material piece formed by pressing the multi-layer brazing material according to the shape of the connecting portion, the parts are combined and heated while pressurizing the package to alloy the multi-layer brazing material. A connection method characterized in that the package is sealed together with the package.
方が半導体素子である請求項7または8記載の接続方
法。10. The connection method according to claim 7, wherein at least one of the first and second substrates is a semiconductor element.
びSnである事を特徴とする請求項7、8、9または1
0記載の接続方法。11. The metal constituting the multilayer brazing material is Au and Sn, according to claim 7, 8, 9 or 1.
0 connection method.
基板への供給が打ち抜き加工により打ち抜き片を形成
し、前記打ち抜きに用いられたポンチを用いて前記打ち
抜き片を直接基板に押圧して行なわれる請求項7、8、
9、10または11記載の接続方法。12. A multilayer brazing material piece is pressed and supplied to a substrate by punching to form a punched piece and directly pressing the punched piece against the substrate using a punch used for the punching. Claims 7, 8,
The connection method according to 9, 10, or 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32605391A JPH05329681A (en) | 1991-12-10 | 1991-12-10 | Multilayered brazing filler metal and its production and connecting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32605391A JPH05329681A (en) | 1991-12-10 | 1991-12-10 | Multilayered brazing filler metal and its production and connecting method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05329681A true JPH05329681A (en) | 1993-12-14 |
Family
ID=18183582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32605391A Pending JPH05329681A (en) | 1991-12-10 | 1991-12-10 | Multilayered brazing filler metal and its production and connecting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05329681A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06246479A (en) * | 1993-02-25 | 1994-09-06 | Nec Corp | Joined metallic sheet |
JPH08139095A (en) * | 1994-11-04 | 1996-05-31 | Nec Corp | Formation of solder bump |
US6188127B1 (en) | 1995-02-24 | 2001-02-13 | Nec Corporation | Semiconductor packing stack module and method of producing the same |
JP2007529318A (en) * | 2004-03-18 | 2007-10-25 | ベール ゲーエムベーハー ウント コー カーゲー | Wax foil for brazing components, especially heat exchanger plates |
JP2012028774A (en) * | 2010-07-21 | 2012-02-09 | Semiconductor Components Industries Llc | Bonding structure and method |
US9780059B2 (en) | 2010-07-21 | 2017-10-03 | Semiconductor Components Industries, Llc | Bonding structure and method |
CN112134023A (en) * | 2020-09-11 | 2020-12-25 | 深圳市飞荣达科技股份有限公司 | A kind of antenna reflector based on brazing process and its manufacturing method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680394A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Alloy solder material washer |
JPS5752590A (en) * | 1980-09-16 | 1982-03-29 | Citizen Watch Co Ltd | Au alloy brazing filler metal of low melting point |
JPH024398A (en) * | 1988-06-23 | 1990-01-09 | Sankyo Kk | Equipment device for play spot |
JPH03187227A (en) * | 1989-12-16 | 1991-08-15 | Mitsubishi Electric Corp | Semiconductor device |
-
1991
- 1991-12-10 JP JP32605391A patent/JPH05329681A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680394A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Alloy solder material washer |
JPS5752590A (en) * | 1980-09-16 | 1982-03-29 | Citizen Watch Co Ltd | Au alloy brazing filler metal of low melting point |
JPH024398A (en) * | 1988-06-23 | 1990-01-09 | Sankyo Kk | Equipment device for play spot |
JPH03187227A (en) * | 1989-12-16 | 1991-08-15 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06246479A (en) * | 1993-02-25 | 1994-09-06 | Nec Corp | Joined metallic sheet |
JPH08139095A (en) * | 1994-11-04 | 1996-05-31 | Nec Corp | Formation of solder bump |
US6188127B1 (en) | 1995-02-24 | 2001-02-13 | Nec Corporation | Semiconductor packing stack module and method of producing the same |
JP2007529318A (en) * | 2004-03-18 | 2007-10-25 | ベール ゲーエムベーハー ウント コー カーゲー | Wax foil for brazing components, especially heat exchanger plates |
JP2012028774A (en) * | 2010-07-21 | 2012-02-09 | Semiconductor Components Industries Llc | Bonding structure and method |
JP2016021578A (en) * | 2010-07-21 | 2016-02-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Bonding structure and method |
US9780059B2 (en) | 2010-07-21 | 2017-10-03 | Semiconductor Components Industries, Llc | Bonding structure and method |
US9997485B2 (en) | 2010-07-21 | 2018-06-12 | Semiconductor Components Industries, Llc | Bonding structure and method |
CN112134023A (en) * | 2020-09-11 | 2020-12-25 | 深圳市飞荣达科技股份有限公司 | A kind of antenna reflector based on brazing process and its manufacturing method |
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