JPH05312731A - Visual inspection equipment - Google Patents
Visual inspection equipmentInfo
- Publication number
- JPH05312731A JPH05312731A JP11443392A JP11443392A JPH05312731A JP H05312731 A JPH05312731 A JP H05312731A JP 11443392 A JP11443392 A JP 11443392A JP 11443392 A JP11443392 A JP 11443392A JP H05312731 A JPH05312731 A JP H05312731A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor chip
- burr
- reflected
- mirror surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000011179 visual inspection Methods 0.000 title description 4
- 230000007547 defect Effects 0.000 claims abstract description 26
- 238000007689 inspection Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 31
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 5
- 230000001788 irregular Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】
【目的】 欠け、突起、バリなどの微小欠陥を有する被
検査物の欠陥検出精度を向上させる。
【構成】 光源７とミラー面６との間に設置された半導
体チップ２にレーザ光を照射し、半導体チップ２の側面
に付着したバリ５の表面で反射した光と、このバリ５の
近傍を通過してミラー面６で反射した光とを受光部９で
検出するようにした外観検査装置である。
(57) [Summary] [Purpose] To improve the defect detection accuracy of an inspection object having minute defects such as chips, protrusions, and burrs. [Structure] A semiconductor chip 2 installed between a light source 7 and a mirror surface 6 is irradiated with laser light, and light reflected by the surface of a burr 5 attached to the side surface of the semiconductor chip 2 and the vicinity of this burr 5 This is an appearance inspection device in which the light passing through and reflected by the mirror surface 6 is detected by the light receiving section 9.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、外観検査技術に関し、
例えばダイシング工程で半導体チップの側面に発生した
欠け、突起、バリなどの微小欠陥の検査に適用して有効
な技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a visual inspection technique,
For example, the present invention relates to a technique effectively applied to the inspection of minute defects such as chips, protrusions, and burrs generated on the side surface of a semiconductor chip in a dicing process.
【０００２】[0002]
【従来の技術】特開昭６２−２４９４２９号、および特
開昭６３−３１０１３９号公報には、パッケージ基板に
実装した半導体チップをキャップで気密封止したチップ
キャリヤが記載されている。2. Description of the Related Art Japanese Unexamined Patent Publication (Kokai) No. 62-249429 and Japanese Unexamined Patent Publication (Kokai) No. 63-310139 disclose a chip carrier in which a semiconductor chip mounted on a package substrate is hermetically sealed with a cap.
【０００３】上記文献に記載されたチップキャリヤは、
ムライトなどのセラミック材料からなるパッケージ基板
の主面上の電極に半田バンプを介して半導体チップをフ
ェイスダウンボンディングし、この半導体チップを窒化
アルミニウム（ＡｌＮ）などの高熱伝導性セラミックか
らなるキャップで気密封止したパッケージ構造を有して
いる。The chip carriers described in the above documents are
A semiconductor chip is face-down bonded to an electrode on the main surface of a package substrate made of a ceramic material such as mullite via solder bumps, and the semiconductor chip is hermetically sealed with a cap made of high thermal conductive ceramic such as aluminum nitride (AlN). It has a closed package structure.
【０００４】また、上記チップキャリヤは、半導体チッ
プの背面（上面）とキャップの下面とを半田で接合する
ことにより、半導体チップから発生した熱をキャップを
通じて外部に放熱させる構造になっている。この半田の
濡れ性を向上させるため、キャップの下面および半導体
チップの背面には、例えばＡｕ、Ｃｒ、Ｃｕなどの金属
薄膜を積層したメタライズ層が設けられる。The chip carrier has a structure in which the back surface (upper surface) of the semiconductor chip and the lower surface of the cap are joined by soldering to radiate the heat generated from the semiconductor chip to the outside through the cap. In order to improve the wettability of the solder, a metallized layer in which metal thin films such as Au, Cr, and Cu are laminated is provided on the lower surface of the cap and the back surface of the semiconductor chip.
【０００５】ところで、半導体チップの背面の上記メタ
ライズ層は、ウエハプロセスの最終工程で形成される
が、半導体ウエハが脆性材料であるのに対して、Ａｕな
どのメタライズ層は延性材料であるため、メタライズ層
を形成した半導体ウエハをダイシングして半導体チップ
を取得する際、半導体チップの側面に微小な欠けや突起
が生じたり、メタライズ層のバリが残ったりすることが
ある。By the way, the metallization layer on the back surface of the semiconductor chip is formed in the final step of the wafer process. The semiconductor wafer is a brittle material, whereas the metallization layer such as Au is a ductile material. When a semiconductor wafer having a metallized layer formed thereon is diced to obtain a semiconductor chip, a minute chip or protrusion may be formed on the side surface of the semiconductor chip, or a burr of the metallized layer may remain.
【０００６】そこで従来は、ダイシング後に半導体チッ
プを光学顕微鏡で目視検査することにより、上記欠け、
突起、バリなどの欠陥の有無を検査している。Therefore, conventionally, by visually inspecting a semiconductor chip with an optical microscope after dicing,
Inspecting for defects such as protrusions and burrs.
【０００７】[0007]
【発明が解決しようとする課題】ところが、ダイシング
工程で半導体チップの側面に発生する欠け、突起、バリ
などの微小欠陥は、形状が不定形で、その表面で光が乱
反射し易いことから、顕微鏡の光学系で検出される反射
光量が少なく、十分な欠陥検出精度が得られないという
問題があった。However, microscopic defects such as chips, protrusions, and burrs that are generated on the side surface of a semiconductor chip during the dicing process have an irregular shape, and light is likely to be diffusely reflected on the surface of the semiconductor chip. There is a problem that the amount of reflected light detected by the optical system of 1 is small and sufficient defect detection accuracy cannot be obtained.
【０００８】そこで、本発明の目的は、前述した背面に
メタライズ層を形成した半導体チップのように、側面に
欠け、突起、バリなどの微小欠陥を有する被検査物の欠
陥検出精度を向上させることのできる技術を提供するこ
とにある。Therefore, an object of the present invention is to improve the defect detection accuracy of an inspected object having minute defects such as chips, protrusions, burrs and the like on the side surface like the above-described semiconductor chip having a metallized layer formed on the back surface. It is to provide the technology that can.
【０００９】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【００１０】[0010]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
次のとおりである。Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.
【００１１】本発明の外観検査装置は、光源とミラー面
との間に設置された被検査物に光を照射し、被検査物の
欠陥表面で反射した光と欠陥近傍を通過してミラー面で
反射した光とを受光部で検出する構成になっている。The appearance inspection apparatus of the present invention irradiates an object to be inspected installed between a light source and a mirror surface with light, passes through the light reflected on the defect surface of the object to be inspected and the vicinity of the defect, and the mirror surface. The light receiving section detects the light reflected by.
【００１２】[0012]
【作用】上記した手段によれば、被検査物の欠陥表面で
は光が乱反射してその一部のみが受光部で検出されるの
に対し、この欠陥近傍を通過してミラー面で反射した光
は、そのほぼ全量が受光部で検出されるので、受光部で
検出される二つの反射光の間に大きなコントラストが得
られ、高精度の欠陥検出が可能となる。According to the above-mentioned means, light is diffusely reflected on the defect surface of the object to be inspected and only a part of the light is detected by the light receiving portion, whereas the light passing through the vicinity of the defect and reflected on the mirror surface is detected. Since almost all of the light is detected by the light receiving section, a large contrast can be obtained between the two reflected lights detected by the light receiving section, and high-accuracy defect detection is possible.
【００１３】[0013]
【実施例】図１は、本発明の一実施例である外観検査装
置の光学系を示す概略図である。1 is a schematic view showing an optical system of an appearance inspection apparatus according to an embodiment of the present invention.
【００１４】本実施例の外観検査装置は、半導体ウエハ
のダイシング工程で半導体チップの側面に発生した欠
け、突起、バリなどの微小欠陥を検出するための装置で
あり、水平方向に移動可能なＸＹテーブル１の上面に
は、被検査物である半導体チップ２が位置決めされるよ
うになっている。The appearance inspection apparatus of this embodiment is an apparatus for detecting minute defects such as chips, protrusions, burrs and the like that have occurred on the side surface of a semiconductor chip in a semiconductor wafer dicing process, and is movable in the horizontal direction. The semiconductor chip 2, which is an object to be inspected, is positioned on the upper surface of the table 1.
【００１５】上記半導体チップ２は、特開昭６２−２４
９４２９号、特開昭６３−３１０１３９号公報などに記
載されたチップキャリヤの組み立てに用いられるもの
で、その素子形成面（下面）には、半田で構成された多
数のＣＣＢバンプ３が形成されている。The semiconductor chip 2 is disclosed in Japanese Patent Laid-Open No. 62-24 / 1987.
No. 9429, JP-A-63-310139, etc. are used for assembling a chip carrier, and a large number of CCB bumps 3 made of solder are formed on the element forming surface (lower surface) thereof. There is.
【００１６】上記半導体チップ２の背面には、例えばＡ
ｕ、Ｃｒ、ＣｕおよびＡｕの四層の金属薄膜を積層した
メタライズ層４が設けられている。このメタライズ層４
は、ウエハプロセスの最終工程で蒸着法などを用いて形
成されたものである。On the back surface of the semiconductor chip 2, for example, A
A metallized layer 4 in which four metal thin films of u, Cr, Cu and Au are laminated is provided. This metallized layer 4
Is formed by using a vapor deposition method or the like in the final step of the wafer process.
【００１７】図に示すように、上記半導体チップ２の側
面には、メタライズ層４を形成した半導体ウエハをダイ
シングした際に生じたバリ５が付着している。このバリ
５は、メタライズ層４の一部が半導体チップ２の側面に
残ったもので、これを放置したままチップキャリヤを組
み立てると、短絡不良などの原因となる。As shown in the figure, burrs 5 produced when the semiconductor wafer having the metallized layer 4 formed thereon is diced are attached to the side surfaces of the semiconductor chip 2. The burr 5 is a part of the metallization layer 4 left on the side surface of the semiconductor chip 2, and if the chip carrier is assembled while leaving the metallization layer 4 left, it may cause a short circuit or the like.
【００１８】上記半導体チップ２を位置決めするＸＹテ
ーブル１の上面には、ミラー面６が形成されており、ミ
ラー面６の上方には、光源７、ハーフミラー８、高感度
の受光素子を内蔵した受光部９が設置されている。上記
光源７には、エネルギー密度の高い光ビームを発生する
ことのできるＨｅ−Ｎｅレーザ光源が使われている。A mirror surface 6 is formed on the upper surface of the XY table 1 for positioning the semiconductor chip 2, and a light source 7, a half mirror 8 and a highly sensitive light receiving element are built in above the mirror surface 6. A light receiving unit 9 is installed. As the light source 7, a He—Ne laser light source capable of generating a light beam having a high energy density is used.
【００１９】上記外観検査装置を使って半導体チップ２
の欠陥検査を行うには、光源７からＸＹテーブル１のミ
ラー面６に対して垂直にレーザ光を照射し、その反射光
をハーフミラー８で屈折させて受光部９で検出する。The semiconductor chip 2 is manufactured by using the above appearance inspection apparatus.
In order to perform the defect inspection, the laser light is emitted from the light source 7 perpendicularly to the mirror surface 6 of the XY table 1, and the reflected light is refracted by the half mirror 8 and detected by the light receiving unit 9.
【００２０】このとき、バリ５の表面に照射されたレー
ザ光は、バリ５の表面形状が不定形であるために乱反射
し、反射光の一部のみが受光部９に入射する。これに対
し、バリ５の近傍を通過してミラー面６に照射されたレ
ーザ光は、その大部分が受光部９に入射する。At this time, the laser beam applied to the surface of the burr 5 is irregularly reflected because the surface shape of the burr 5 is irregular, and only a part of the reflected light is incident on the light receiving section 9. On the other hand, most of the laser light that has passed through the vicinity of the burr 5 and is applied to the mirror surface 6 is incident on the light receiving unit 9.
【００２１】従って、受光部９で検出される上記二つの
反射光の間には、大きなコントラストが生じるため、従
来の光学顕微鏡を使った欠陥検査方法に比べて、バリ５
の大きさやその表面形状を高精度で検出することが可能
となる。Therefore, since a large contrast is generated between the above two reflected lights detected by the light receiving portion 9, the burr 5 is different from the defect inspection method using the conventional optical microscope.
It is possible to detect the size of the surface and its surface shape with high accuracy.
【００２２】これにより、上記バリ５に起因するチップ
キャリヤの短絡不良を防止することができるので、チッ
プキャリヤの信頼性および製造歩留りを向上させること
ができる。As a result, it is possible to prevent short-circuiting defects of the chip carrier due to the burr 5, so that the reliability and manufacturing yield of the chip carrier can be improved.
【００２３】なお、本実施例の外観検査装置によれば、
半導体チップ２の側面などに生じた欠けや突起など、上
述したバリ５以外の欠陥も同様に高精度で検出すること
が可能である。According to the appearance inspection apparatus of this embodiment,
Defects other than the burr 5 described above, such as a chip or a protrusion generated on the side surface of the semiconductor chip 2 can be similarly detected with high accuracy.
【００２４】以上、本発明者によってなされた発明を実
施例に基づき具体的に説明したが、本発明は前記実施例
に限定されるものではなく、その要旨を逸脱しない範囲
で種々変更可能であることはいうまでもない。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.
【００２５】例えば図２に示すように、ＸＹテーブル１
のミラー面６に回折格子１０を設け、この回折格子１０
の干渉によって生じる回折像を受光部９で検出するよう
にしてもよい。For example, as shown in FIG. 2, the XY table 1
The diffraction grating 10 is provided on the mirror surface 6 of the
The light receiving section 9 may detect a diffraction image caused by the interference of the.
【００２６】この場合は、バリ５の近傍を通過してミラ
ー面６で反射したレーザ光の回折像が規則的なパターン
となるのに対し、バリ５の存在する箇所では回折像が不
規則なパターンとなるため、二つの回折像を対比するこ
とにより、従来の光学顕微鏡を使った欠陥検査方法に比
べて、バリ５の大きさやその表面形状を高精度で検出す
ることが可能となる。In this case, the diffraction pattern of the laser light passing through the vicinity of the burr 5 and reflected by the mirror surface 6 has a regular pattern, whereas the diffraction pattern is irregular at the location where the burr 5 exists. Since it becomes a pattern, by comparing two diffraction images, it becomes possible to detect the size of the burr 5 and its surface shape with high accuracy as compared with the conventional defect inspection method using an optical microscope.
【００２７】以上の説明では、半導体チップの外観検査
に適用した場合について説明したが、本発明の外観検査
装置は、欠けや突起などの欠陥を有する被検査物の欠陥
検査に広く適用することができる。In the above description, the case where the invention is applied to the appearance inspection of the semiconductor chip has been described. However, the appearance inspection apparatus of the present invention can be widely applied to the defect inspection of the inspection object having defects such as chips and protrusions. it can.
【００２８】[0028]
【発明の効果】本願によって開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
以下の通りである。The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.
It is as follows.
【００２９】本発明の外観検査装置によれば、欠け、突
起、バリなどの微小欠陥を有する被検査物の欠陥検出精
度を向上させることができる。According to the appearance inspection apparatus of the present invention, it is possible to improve the defect detection accuracy of the inspection object having a minute defect such as a chip, a protrusion or a burr.
【００３０】また、本発明の外観検査装置によれば、欠
陥検査の自動化を促進することができる。Further, according to the appearance inspection apparatus of the present invention, automation of defect inspection can be promoted.
【図１】本発明の一実施例である外観検査装置の光学系
を示す概略図である。FIG. 1 is a schematic diagram showing an optical system of a visual inspection apparatus that is an embodiment of the present invention.
【図２】本発明の他の実施例である外観検査装置の光学
系を示す概略図である。FIG. 2 is a schematic diagram showing an optical system of a visual inspection apparatus that is another embodiment of the present invention.
１ ＸＹテーブル ２ 半導体チップ ３ ＣＣＢバンプ ４ メタライズ層 ５ バリ ６ ミラー面 ７ 光源 ８ ハーフミラー ９ 受光部 １０ 回折格子 1 XY Table 2 Semiconductor Chip 3 CCB Bump 4 Metallization Layer 5 Burr 6 Mirror Surface 7 Light Source 8 Half Mirror 9 Photoreceptor 10 Diffraction Grating
Claims (3)
射するミラー面と、前記光源とミラー面との間に設置さ
れた被検査物の欠陥表面で反射した光および前記欠陥近
傍を通過して前記ミラー面で反射した光を検出する受光
部とを備えていることを特徴とする外観検査装置。1. A light source, a mirror surface for reflecting light emitted from the light source, light reflected on a defect surface of an object to be inspected provided between the light source and the mirror surface, and the vicinity of the defect. And a light receiving section for detecting the light reflected by the mirror surface.
特徴とする請求項１記載の外観検査装置。2. The appearance inspection apparatus according to claim 1, wherein a diffraction grating is provided on the mirror surface.
とする請求項１記載の外観検査装置。3. The appearance inspection apparatus according to claim 1, wherein the light source is a laser light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11443392A JPH05312731A (en) | 1992-05-07 | 1992-05-07 | Visual inspection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11443392A JPH05312731A (en) | 1992-05-07 | 1992-05-07 | Visual inspection equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05312731A true JPH05312731A (en) | 1993-11-22 |
Family
ID=14637602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11443392A Pending JPH05312731A (en) | 1992-05-07 | 1992-05-07 | Visual inspection equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05312731A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012111955A3 (en) * | 2011-02-15 | 2012-12-20 | Seo Bong Min | Apparatus and method for horizontally measuring an object |
| JP2017058225A (en) * | 2015-09-16 | 2017-03-23 | 株式会社東芝 | Device, method, and program for detecting defect |
-
1992
- 1992-05-07 JP JP11443392A patent/JPH05312731A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012111955A3 (en) * | 2011-02-15 | 2012-12-20 | Seo Bong Min | Apparatus and method for horizontally measuring an object |
| KR101250007B1 (en) * | 2011-02-15 | 2013-04-03 | 서봉민 | Apparatus for detecting level and method for detecting level |
| JP2017058225A (en) * | 2015-09-16 | 2017-03-23 | 株式会社東芝 | Device, method, and program for detecting defect |
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