JPH05311419A - Magnetron type sputtering device - Google Patents

Abstract

PURPOSE:To form films without step cutting by improving the step coverage of the metallic films to be deposited in the contact holes of the integrated circuit of a semiconductor substrate. CONSTITUTION:Two sheets of sputtering atom direction control plates 10 are arranged between an Al target 3 and the semiconductor substrate 7. The positions of the respective sputtering atom direction control plates 10 are fixed and held for the prescribed period of time from the start of sputtering and Al atoms 9 to be radiated perpendicularly on the surface of the semiconductor substrate 7 are passed through holes 12 and are deposited on the semiconductor substrate 7. The sputtering atom direction control plates 10 on the semiconductor substrate 7 side are moved by cylinders 11 after the lapse of the time to incorporate and deposit the diagonally radiated sputtering atoms into and on the semiconductor substrate 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron type sputtering apparatus, and more particularly to a magnetron type sputtering apparatus having a sputter atom direction control mechanism.

[0002]

2. Description of the Related Art Heretofore, this type of magnetron type sputtering apparatus has used the principles of a leakage magnetic field type magnetron sputtering method and a magnetic field compression type magnetron sputtering method. A thin film was formed on the semiconductor substrate by accelerating and causing the formed Ar ions to collide with the target.

FIG. 4 is a schematic sectional view showing an example of a conventional magnetron type sputtering apparatus. As shown in FIG. 4, this magnetron type sputtering apparatus includes a magnet pair 2 which holds an Al target 3 and generates a magnetic field 5, and an Al pair.
It has a holder 6 facing the target 3 and holding the semiconductor substrate 7, and a power supply unit 1 for applying a voltage to the Al target 3.

In the operation of this magnetron type sputtering apparatus, first, when a voltage of negative potential is applied by the power supply unit 1, the electrons emitted from the Al target 2 generate a magnetic field 5 formed by the rotating magnet pair 2. Exercise under the influence. In particular, the magnetic force lines having a component parallel to the surface of the Al target 3 cause the electrons to have a ictoid motion on the surface of the Al target 3, so that the ionization of Ar is promoted and the Ar ion 8 is generated. The Ar ions 8 collide with the Al target 3 that is the cathode to knock out the Al atoms 9 of the target material and deposit them on the semiconductor substrate 7 mounted on the holder 6 to form a thin film.

[0005]

FIG. 5 is a sectional view showing the shape of a sputtered film.

In this conventional magnetron type sputtering apparatus, there is no mechanism for controlling the directionality of sputtered atoms. Therefore, the sputtered atoms traveling from the target surface to the semiconductor substrate surface are 30 to 40 ° with respect to the semiconductor substrate surface.
The main component is the one with an angle of 0 (vertical 0 °),
When a film is formed on a fine contact (submicron contact), the shadow effect reduces the probability that sputtered atoms will reach the bottom of the contact.

For example, when an Al sputtered film 14a is deposited on a contact hole pattern 13a having a contact diameter of 0.8 μm and a contact depth of 0.8 μm as shown in FIG. The step coverage rate represented by the minimum part of the aluminum film thickness is about 0 to 7%, and in some cases, the step is in a broken state.

As described above, there is a problem that the step coverage of the sputtered film is deteriorated and eventually the conduction failure is caused.

An object of the present invention is to provide a magnetron type sputtering apparatus capable of forming a sputtering film having a high step coverage by directing the sputtering direction in a direction perpendicular to the adhered surface.

[0010]

A first magnetron type sputtering apparatus of the present invention includes a holder for holding a semiconductor substrate, a target arranged facing the surface of the semiconductor substrate, the target and the semiconductor substrate. And a metal plate member having a plurality of holes through which sputtered atoms emitted from the target pass, and a mechanism for giving a moving motion to the metal plate member, and a predetermined time from the start of sputtering It is characterized in that the metal plate member is fixedly held until the diameter exceeds the diameter, and a moving motion is given to the metal plate member after the diameter exceeds the predetermined time. The second aspect of the present invention
The magnetron type sputtering apparatus is characterized in that the metal plate member is composed of two sheets, one of them is fixed, and the other one is given the moving motion.

[0011]

The present invention will be described below with reference to the drawings.

1A and 1B are a schematic sectional view showing an embodiment of a magnetron type sputtering apparatus of the present invention and a plan view showing a sputtering atomic direction control plate. As shown in FIG. 1, this magnetron type sputtering device
In (a), two sputter atomic direction control plates 12 having a plurality of holes 12 are provided between the Al target 3 and the semiconductor substrate 7, and these sputter atomic direction control plates are made of metal plates and It is installed at intervals of about 3 cm. Further, variable power sources 4a and 4b with variable voltage are connected to the sputter atom direction control plate 10 so that sputter atoms can easily pass through the holes 12. Further, the semiconductor substrate in the control plate 10 is connected. One on the 4 side is A
The four cylinders 11 are configured to be movable horizontally relative to the surfaces of the target 3 and the semiconductor substrate 7. The position of the other sputter atomic direction control plate 10 is fixed.

Next, the operation of this magnetron type sputtering apparatus will be described. First, the electrons emitted from the Al target 3 to which the partial voltage is applied by the power supply unit 1 move under the influence of the magnetic field 5 formed by the rotating magnet pair 2. In particular, magnetic force lines having a component parallel to the surface of the Al target 3 cause cycloid motion of electrons on the surface of the Al target 3, so that the ionization of Ar is promoted.
To produce. The Ar ions 8 collide with the Al target 3 that is the cathode and knock out the Al atoms 9 of the target material. Then, the Al atoms 9 that have been knocked out pass through two sputter atomic direction control plates 10 and are deposited on the semiconductor substrate 7 mounted on the holder 6 to form a thin film.

In this sputtering operation, for example, in the first half 30 seconds of the total sputtering time of 60 seconds, the two sputtering atomic direction control plates 10 are semiconductors of the Al atoms 9 knocked out from the surface of the Al target 3. It is positioned so that only the heavy vertical component (sputtering angle 0 °) with respect to the substrate 7 can pass through the hole 12, and during the latter half 30 seconds, one of the two sputtering atomic direction control plates 10 on the semiconductor substrate 7 side is replaced with an Al atom 9
While maintaining the positional relationship with the other one so that only the component of the sputter angle of 30 to 40 ° can pass through the hole 12,
The movement of the four cylinders 11 in the horizontal direction with respect to the surfaces of the target 3 and the semiconductor substrate 7 is moved to the left, right, front and back.

2A and 2B are a schematic sectional view showing another embodiment of the magnetron type sputtering apparatus of the present invention and a plan view showing a sputtering atomic direction control plate. In this magnetron type sputtering apparatus, as shown in FIG. 2, the sputter atomic direction control plate 10a is integrated to a thickness of about the thickness including the distance between the sputter atomic direction control plates in the above-mentioned embodiment, and the sputter atomic direction control plate is formed. The movement of 10a is to perform a swinging motion in which the tilt angle is changed by a cylinder attached at a position perpendicular to the target surface. The other structure is the same as that of the previous embodiment.

Also in the operation of this magnetron type sputtering apparatus, the position of the sputter atomic direction control plate 10a is fixed from the start time of the sputtering to the passing of the predetermined time, and the cylinder 11 is operated after the passing of the predetermined time, and the sputter atomic direction is changed. The control plate 10a is swung so that the sputtered atoms 9 radiated at an angle of 30 to 40 pass through the holes 12 to form a film on the semiconductor substrate 7. Further, the time for fixing the sputter atomic direction control plate 10a needs to be long when it is necessary to increase the step coverage rate, and when it is not necessary so much, it is necessary to shorten it to accelerate the film formation time.

[0017]

As described above, according to the present invention, a sputter atom direction control plate having a plurality of holes through which sputter atoms pass is provided between a target and a semiconductor substrate which is a film formation plate. The direction control plate is moved and controlled. That is, at the start of sputtering, the position of the sputter atomic direction control plate is fixed, only the sputter atoms of the vertical component are allowed to pass through the hole, deposited on the semiconductor substrate, and after forming a film with a desired film thickness, Component sputtered atom with an angle of 40 ° Sputtered atoms are deposited from all directions with respect to the horizontal direction of the semiconductor substrate to form a film, so that even in the case of a submicron fine contact hole, sufficient sputtered atoms reach the bottom of the contact. The effect is that good step coverage can be obtained.

[Brief description of drawings]

1 shows an embodiment of a magnetron type sputtering apparatus of the present invention, (a) is a schematic sectional view showing the welfare of the main part,
(B) is a plan view of a sputtering atomic direction control plate.

FIG. 2 shows another embodiment of the magnetron type sputtering apparatus of the present invention, (a) is a schematic cross-sectional view showing the constitution of the main part,
(B) is a plan view of a sputtering atomic direction control plate.

FIG. 3 is a cross-sectional view showing the shape of a sputtered film.

FIG. 4 is a schematic cross-sectional view showing a configuration of a main part of an example of a conventional magnetron type sputtering apparatus.

FIG. 5 is a cross-sectional view showing the shape of a sputtered film.

[Explanation of symbols]

 1 Power Supply Section 2 Magnet Pair 3 Al Targets 4a, 4b, 4c Variable Power Supply Section 5 Magnetic Field 6 Holder 7 Semiconductor Substrate 8 Ar Ion 9 Al Atom 10, 10a Sputter Atom Control Plate 11 Cylinder 12 Hole 13, 13a Contact Hole Pattern 14, 14a Al sputtered film

Claims (2)

[Claims] 1. A holder for holding a semiconductor substrate, a target arranged to face the surface of the semiconductor substrate, sputter atoms arranged between the target and the semiconductor substrate and emitted from the target. A metal plate member having a plurality of holes passing therethrough, and a mechanism for imparting a moving motion to the metal plate member, fixedly holding the metal plate member for a predetermined time from the start of sputtering to a predetermined time, and the predetermined time. A magnetron type sputtering apparatus, characterized in that a moving motion is given to the metal plate member after passing through the diameter. 2. The magnetron-type sputtering apparatus according to claim 1, wherein the metal plate member is composed of two sheets, one of which is fixed and the other one is given the moving motion. ..