JPH0530906B2 - - Google Patents
Info
- Publication number
- JPH0530906B2 JPH0530906B2 JP61277516A JP27751686A JPH0530906B2 JP H0530906 B2 JPH0530906 B2 JP H0530906B2 JP 61277516 A JP61277516 A JP 61277516A JP 27751686 A JP27751686 A JP 27751686A JP H0530906 B2 JPH0530906 B2 JP H0530906B2
- Authority
- JP
- Japan
- Prior art keywords
- cutting machine
- carbon
- manufacturing
- gas
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 3
- 239000013081 microcrystal Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005284 excitation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Description
【発明の詳細な説明】
本発明は、ダイヤモンド構造の微結晶性を有す
る炭素被膜を切削機の歯の表面にコーテイングす
るダイヤモンド被膜を有する切削機の作製方法に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a cutting machine having a diamond coating, in which the surface of the teeth of the cutting machine is coated with a microcrystalline carbon coating having a diamond structure.
本発明は、アセチレン、メタンのような炭化水
素気体をプラズマ雰囲気中に導入し分解せしめる
ことにより、Ｃ−Ｃ結合を作り、結果としてグラ
フアイトのような導電性または不良導電性の炭素
被膜を切削機の歯の表面に形成するのではなく、
ダイヤモンドに類似の絶縁性の炭素被膜を切削機
の歯の表面に形成することを特徴としている。 The present invention creates C-C bonds by introducing a hydrocarbon gas such as acetylene or methane into a plasma atmosphere and decomposing it, resulting in the cutting of conductive or poorly conductive carbon films such as graphite. Rather than forming on the surface of the machine teeth,
It is characterized by forming an insulating carbon film similar to diamond on the surface of the cutting machine teeth.
さらに、本発明作製方法によるのは炭素被膜
は、その硬度も4500Kg／mm2以上、代表的には6500
Kg／mm2というダイヤモンド類似の硬さを有する。
そしてその結晶学的構造は５〜200Åの大きさの
微結晶性を有している。 Furthermore, the hardness of the carbon coating produced by the manufacturing method of the present invention is 4500 Kg/mm 2 or more, typically 6500 Kg/mm 2 or more.
It has a hardness of Kg/mm 2 similar to diamond.
Its crystallographic structure has microcrystallinity with a size of 5 to 200 Å.
またこの炭素被膜は水素が25モル％以下の量を
同時に含有する。 Further, this carbon film simultaneously contains hydrogen in an amount of 25 mol % or less.
さらに、本発明作製方法で得られる炭素被膜
は、珪素がSi／Ｃ≦0.25の濃度に添加されたいわ
ゆる炭素を主成分とする炭素をも意味する。 Furthermore, the carbon film obtained by the manufacturing method of the present invention also refers to carbon whose main component is so-called carbon to which silicon is added at a concentration of Si/C≦0.25.
本発明は、特に、前記炭素被膜を金属またはセ
ラミツクスよりなる切削機基体の歯の表面に形成
する切削機の作製方法であることを特徴とするも
のである。 In particular, the present invention is characterized in that it is a method for manufacturing a cutting machine in which the carbon film is formed on the tooth surface of a cutting machine base made of metal or ceramics.
本発明作製方法では、前記炭素被膜を形成させ
る際に切削機基体に加える温度を150〜450℃とす
ることが可能となり、従来より知られている
CVD法において用いられる基板温度に加べ500〜
1500℃も低い温度で炭素被膜を形成することがで
きる。 In the manufacturing method of the present invention, it is possible to apply a temperature of 150 to 450°C to the cutting machine substrate when forming the carbon film, which is different from conventionally known methods.
In addition to the substrate temperature used in the CVD method,
Carbon films can be formed at temperatures as low as 1500℃.
以下第１図に基づいて本発明切削機の作製方法
について説明する。 The method for manufacturing the cutting machine of the present invention will be explained below based on FIG.
第１図は、本発明の炭素被膜を切削機基体の歯
の表面に形成するプラズマCVD装置の概要を示
している。 FIG. 1 shows an outline of a plasma CVD apparatus for forming the carbon film of the present invention on the tooth surface of a cutting machine base.
第１図において、反応性気体である炭化水素気
体、例えばアセチレンがバルブ８、流量計５を経
て反応系中の励起室４に導入される。さらにキヤ
リアガスとして水素をバルブ７、流量計６を経て
同様に励起室４に導入される。 In FIG. 1, a hydrocarbon gas, such as acetylene, which is a reactive gas, is introduced into an excitation chamber 4 in a reaction system via a valve 8 and a flow meter 5. Further, hydrogen as a carrier gas is similarly introduced into the excitation chamber 4 via a valve 7 and a flow meter 6.
前記反応性気体は、2.45GHzのマイクロ並みに
よる電磁エネルギ３により0.1〜5kwのエネルギ
を加えられ、前記励起室４にて活性化、分解させ
られる。 The reactive gas is activated and decomposed in the excitation chamber 4 by applying energy of 0.1 to 5 kW by electromagnetic energy 3 of 2.45 GHz micro-level.
さらに、この反応性気体は、反応炉１にて加熱
炉９により150〜450℃に加熱させ、さらに
13.56MHzの高周波エネルギ２により反応、重合
され、Ｃ−Ｃ結合を多数形成した炭素を生成す
る。 Furthermore, this reactive gas is heated to 150 to 450°C in the heating furnace 9 in the reaction furnace 1, and then
It is reacted and polymerized by high frequency energy 2 of 13.56 MHz to produce carbon having many C--C bonds.
この際、加える電磁エネルギを強くした場合は
５〜200Åの大きさのダイヤモンド構造の微結晶
性を有する炭素を形成させうる。しかし、この電
磁エネルギが小さい場合は、アモルフアス構造の
みになつてしまつた。また、この反応の際、電源
１３によりヒータ１１を加熱し、さらに、その上
の切削機基体１０を加熱して行う。 At this time, if the applied electromagnetic energy is increased, microcrystalline carbon having a diamond structure with a size of 5 to 200 Å can be formed. However, when this electromagnetic energy is small, only an amorphous structure results. Further, during this reaction, the heater 11 is heated by the power source 13, and the cutting machine base 10 thereon is further heated.
このように、前記本発明作製方法にり、金属ま
たはセラミツクスからなる切削機基体の歯の表面
に前記炭素被膜を形成することにより均質な耐摩
耗性表面を有せしめた切削機の歯を形成すること
ができる。 As described above, by using the manufacturing method of the present invention, the carbon film is formed on the surface of the teeth of the cutting machine base made of metal or ceramics, thereby forming cutting machine teeth having a uniform wear-resistant surface. be able to.
前記炭素被膜の選択的な除去方法として、切削
機全面に設けられた炭素に対し、酸化物雰囲気中
にてレーザ光を選択的にコンピユータ制御により
行い、不要の部分の炭素を酸化して炭酸ガスとし
て放出して除去する。このレーザ光による選択エ
ツチングは本発明作製方法を工業的に応用する場
合に任意に用いることができる。 As a method for selectively removing the carbon film, a laser beam is selectively applied to the carbon provided on the entire surface of the cutting machine under computer control in an oxide atmosphere to oxidize the unnecessary carbon and create carbon dioxide gas. be released and removed as This selective etching using laser light can be used arbitrarily when the manufacturing method of the present invention is applied industrially.
以上の説明から明らかなように、本発明切削機
の作製方法により作製された切削機は、金属また
はセラミツクスからなる切削機基体の歯の表面に
ダイヤモンド構造の微結晶性を有する炭素または
炭素を主成分とした被膜をコーテイングして設け
たから、その硬度または基体に対する密着性がき
わめて優れたものが得られる。 As is clear from the above explanation, the cutting machine manufactured by the cutting machine manufacturing method of the present invention mainly contains carbon or carbon having a diamond structure microcrystalline property on the tooth surface of the cutting machine base made of metal or ceramics. Since the component film is coated, a product with extremely excellent hardness and adhesion to the substrate can be obtained.
本発明作製方法において作製される切削機の基
体としてセラミツクスや金属を用いるが、前記セ
ラミツクスとしてはアルミナ、ジルコニア、また
はそれらに炭素またはランタン等の希土類元素が
添加された任意の材料を用いることができる。 Ceramics or metals are used as the base of the cutting machine manufactured by the manufacturing method of the present invention, and the ceramics may be alumina, zirconia, or any material to which a rare earth element such as carbon or lanthanum is added. .
また金属としては、ステンレス、モリブデン、
タングステン等の少なくとも300〜450℃の温度に
耐えられる材料ならば応用可能である。 Metals include stainless steel, molybdenum,
Any material that can withstand temperatures of at least 300 to 450°C, such as tungsten, can be used.
第１図は、炭素被膜を被形成面上に作製する本
発明製造装置の概要を示す。
FIG. 1 shows an outline of the manufacturing apparatus of the present invention for manufacturing a carbon film on a surface to be formed.
Claims (1)
器の歯が装填されている反応容器内に前記炭化水
素気体と水素の混合気体を導入し、前記反応容器
内を0.001〜10torrの圧力に保持して、外部より
1GHz以上の周波数のマイクロ波エネルギーを供
給してプラズマ化し、該プラズマ化した混合気体
にさらに高周波エネルギーを供給し、前記混合気
体よりダイヤモンド構造の微結晶を有する炭素被
膜を前記切削機の歯の表面に形成することを特徴
とするダイヤモンド被膜を有する切削機の作製方
法。1. Using a hydrocarbon gas as a reactive gas, a mixture of the hydrocarbon gas and hydrogen is introduced into a reaction vessel in which the teeth of a cutter are loaded, and the pressure inside the reaction vessel is maintained at a pressure of 0.001 to 10 torr. from the outside
Microwave energy with a frequency of 1 GHz or higher is supplied to turn the gas mixture into plasma, and high frequency energy is further supplied to the gas mixture turned into plasma to form a carbon film having diamond-structured microcrystals on the surface of the teeth of the cutting machine. 1. A method for manufacturing a cutting machine having a diamond coating, characterized in that the diamond coating is formed on the cutting machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277516A JPS62167884A (en) | 1986-11-19 | 1986-11-19 | Composite body having carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277516A JPS62167884A (en) | 1986-11-19 | 1986-11-19 | Composite body having carbon film |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56146930A Division JPS5848428A (en) | 1981-09-17 | 1981-09-17 | Composite with carbon film and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62167884A JPS62167884A (en) | 1987-07-24 |
| JPH0530906B2 true JPH0530906B2 (en) | 1993-05-11 |
Family
ID=17584686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61277516A Granted JPS62167884A (en) | 1986-11-19 | 1986-11-19 | Composite body having carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62167884A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2775263B2 (en) * | 1988-10-11 | 1998-07-16 | 株式会社半導体エネルギー研究所 | Member covered with carbon film |
| US6925439B1 (en) | 1994-06-20 | 2005-08-02 | C-Sam, Inc. | Device, system and methods of conducting paperless transactions |
| US6303225B1 (en) * | 2000-05-24 | 2001-10-16 | Guardian Industries Corporation | Hydrophilic coating including DLC on substrate |
-
1986
- 1986-11-19 JP JP61277516A patent/JPS62167884A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE COMMUN * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62167884A (en) | 1987-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0288065A2 (en) | Method for synthesis of diamond | |
| GB2295401A (en) | Monocrystalline diamond films | |
| WO1996030557A1 (en) | Enhanced adherence of diamond coatings employing pretreatment process | |
| EP0371145B1 (en) | Process for vapor-phase synthesis of diamond | |
| JPH0530906B2 (en) | ||
| JPS62167886A (en) | Composite body having carbon film | |
| JPS58156594A (en) | Preparation of hard coating film | |
| JPS62167883A (en) | Production of composite body having carbon film | |
| JPH0361369A (en) | Manufacture of diamond like carbon film | |
| JPH06262525A (en) | Grinding wheel and its manufacture | |
| JPS60137898A (en) | Production of thin diamond film | |
| JPH0341436B2 (en) | ||
| JPH0427690B2 (en) | ||
| JPH02244045A (en) | Photomask | |
| JP2637177B2 (en) | Synthesis method of vapor phase diamond | |
| JPS62161960A (en) | Formation of complex having carbon film | |
| JP2645867B2 (en) | Method of depositing diamond film | |
| JPH01192794A (en) | Vapor-phase production of diamond | |
| JPS6369973A (en) | Production of cubic boron nitride film | |
| JPS63117995A (en) | Device for synthesizing diamond in vapor phase | |
| JPH01246196A (en) | Diamond film manufacturing method | |
| JPH101332A (en) | Chemical resistant material | |
| JPH0481556B2 (en) | ||
| JPH0427691B2 (en) | ||
| JPH0772119B2 (en) | Gas phase synthesis of diamond |